CN105510389A - Humidity sensor based on organic field-effect transistor and preparation method thereof - Google Patents
Humidity sensor based on organic field-effect transistor and preparation method thereof Download PDFInfo
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Abstract
Belonging to the technical field of humidity sensors, the invention discloses a humidity sensor based on an organic field-effect transistor and a preparation method thereof to solve the disadvantages of low sensitivity, high lower detection limit, difficult realization of miniaturization and integration, and single detection parameter in traditional resistive and capacitive humidity sensors. The humidity sensor provided by the invention consists of a substrate, a gate electrode, a gate insulating layer and an organic semiconductor layer that are disposed from bottom up in order. A source electrode and a drain electrode are connected on the organic semiconductor layer, the organic semiconductor layer is made from a soluble organic semiconductor, gelatin is added into the soluble organic semiconductor, and the volume ratio of the soluble organic semiconductor to the gelatin is 4:1-9:1.
Description
Technical field
The invention belongs to humidity sensor technical field, disclose a kind of humidity sensor based on organic field effect tube and preparation method thereof.
Background technology
Humidity is the physical quantity representing air drying degree, and Measurement accuracy humidity has important purposes in many aspects, such as, and the every aspect of medical science, meteorology, hydrology and industrial and agricultural production.Humidity sensor, is exactly can the instrument of Accurate Determining humidity, in whole humidity detecting devices, is in core status.
Humidity sensor of a great variety, mainly comprises electric resistance moisture sensor, capacitance type humidity sensor, electrolyte ion type humidity sensor and weight humidity sensor etc.Current, study hotspot both domestic and external is electric resistance moisture sensor and capacitance type humidity sensor mainly, when water vapor adsorption is at material surface, causes the change of device resistivity and permittivity, thus realizes the effective detection to humidity.But traditional resistive and capacitance type humidity sensor exist that sensitivity is low, detection limit is high, not easily realize miniaturization, integrated, and the shortcoming that detected parameters is single; In contrast, based on organic semi-conductor organic field effect tube (OrganicField-EffectTransistor, OFET) humidity sensor, as a kind of novel humidity sensor, compared with traditional resistive humidity sensor and capacitance type humidity sensor, except the features such as material source is extensive except having, technique is simple, the realizability of long service life and flexible substrate, have more that response is fast, integrated level is high and the advantage such as multiparameter detection.Meanwhile, OFET humidity sensor agrees with mutually with the high degree of intelligence of market-oriented sensor, highly sensitive requirement, becomes a focus in Novel humidity sensor research field in recent years.
Summary of the invention
In order to solve traditional resistive and capacitance type humidity sensor, the present invention exists that sensitivity is low, detection limit is high, not easily realizes miniaturization, integrated, and the shortcoming problem that detected parameters is single, and a kind of humidity sensor based on organic field effect tube and preparation method thereof is provided, by introducing a certain amount of gelatin in organic semiconductor, strengthen OFET humidity sensor to the absorption of moisture, solve the problems such as the susceptibility that existing humidity sensor exists is low, characteristic parameter is few, integrated level is low.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is:
A kind of humidity sensor based on organic field effect tube, comprise to lower and on the substrate, gate electrode, gate insulator and the organic semiconductor layer that set gradually, the top of described organic semiconductor layer is connected with source electrode and drain electrode, it is characterized in that, described organic semiconductor layer is made up of soluble organic semiconductor, add in described soluble organic semiconductor and have gelatin, the volume ratio of described solubility semiconductor and gelatin is 4:1-9:1.
Described substrate is made up of silicon chip, glass, thin polymer film or metal forming.
The material of described gate insulator is inorganic insulating material or organic insulation; Described inorganic insulating material is silicon dioxide (SiO
2), alundum (Al2O3) (Al
2o
3), silicon nitride (Si
3n
4), titania (TiO
2) in one or more combination; Described organic insulation is one or more combination in polyvinyl alcohol (PVA) (PVA), polyimide (PI), polystyrene (PS), polymethylmethacrylate (PMMA), tygon (PE); Described gate insulating layer thickness is 20 ~ 520nm.
Described soluble organic semiconductor is one or both combination in poly-3-hexyl thiophene (P3HT) or Tips-pentacene (Tips-Pentacene); The thickness of described organic semiconductor layer is 25 ~ 400nm.
The material of described gate electrode, source electrode and drain electrode is gold, silver, copper one or more; Or the material of gate electrode, source electrode and drain electrode is one or both the combination in tin indium oxide conductive film or zinc-tin oxide conductive film; Or the material of described gate electrode, source electrode and drain electrode is conducing composite material, conducing composite material is gold size, elargol or carbon paste, and the thickness of described gate electrode, source electrode and drain electrode is 10 ~ 100nm.
Based on a preparation method for the humidity sensor of organic field effect tube, it is characterized in that, comprise the following steps:
(1) substrate is cleaned, dry after cleaning; Washing agent, acetone soln, deionized water and aqueous isopropanol is utilized to clean substrate;
(2) prepare gate electrode on the surface of substrate, form the figure of gate electrode;
(3) on gate electrode, gate insulator is prepared;
(4) on gate insulator, prepare organic semiconductor layer, the ratio being 4:1-9:1 according to the volume ratio of solubility semiconductor solution and gelatin solution is carried out miscible, prepares gelatin-organic semiconductor layer, and carries out annealing in process;
(5) on organic semiconductor layer, source electrode and drain electrode is prepared;
(6) organic field effect tube after step (5) being obtained encapsulates.
In described step (2) and (5), gate electrode, source electrode, drain electrode are by a kind of method preparation in vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, serigraphy, printing or spin coating.
In described step (3), gate insulator is by a kind of method preparation in plasma enhanced chemical vapor deposition, thermal oxide, spin coating or vacuum evaporation.
In described step (4), gelatin-organic semiconductor layer is by plasma enhanced chemical vapor deposition, thermal oxide, spin coating, vacuum evaporation, roller coat, a kind of method preparation of dripping in film, impression, printing or gas blowout.
The present invention introduces a certain amount of gelatin in organic semiconductor layer, utilize the material behavior of gelatin uniqueness, accuracy controlling is carried out to the pattern of organic semiconductor layer film, control the size of semiconductor material crystal grain in organic semiconductor, by the suitable adjustment to gelatin ratio, organic semiconductor layer will trend towards forming the pattern with less crystal grain.When crystal grain is less, mean and there is more crystal grain gap in organic semiconductor, this will be conducive to hydrone and be diffused in the middle of carrier channels more rapidly, thus reach the effect detecting humidity faster and better.
Meanwhile, because gelatin has excellent water absorption character, therefore, after mixing gelatin in organic semiconductor layer, can obviously promote half organic conductor layer to the suction-operated of hydrone, significantly can promote the detection limit of humidity, realize the object detected fast simultaneously.
Therefore compared with prior art, the present invention has following beneficial effect:
1, after organic semiconductor layer introduces a certain amount of gelatin, the responsiveness of humidity significantly promotes, and detecting concentration lower limit is lower;
2, compared with existing electric resistance moisture sensor, capacitance type humidity sensor, the humidity sensor based on field effect transistor has the advantage that multiparameter detects, and can be realized the object of accurate detection by the monitoring of more multiparameter;
3, after organic semiconductor layer introduces a certain amount of gelatin, the humidity sensor based on organic field effect tube will have response speed faster, can realize the quick detection of gas;
4, gelatin is a kind of animal protein, wide material sources, environmental friendliness, and with low cost, and preparation technology is simple, is easy to industrialization large-scale production.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 be embodiment 7 prepare device under different humidity condition, the change of device performance; Wherein, I
oNfor saturation current, μ is carrier mobility, V
tHfor threshold voltage, can find out that device is under different humidity condition, the performance parameter of device there occurs larger change, serves the effect of accurate detection.
Mark in figure: 1, substrate, 2, gate electrode, 3, gate insulator, 4, organic semiconductor layer, 5, source electrode, 6, drain electrode.
Embodiment
Below in conjunction with embodiment, the invention will be further described, and described embodiment is only the present invention's part embodiment, is not whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments used obtained under creative work prerequisite, belongs to protection scope of the present invention.
By reference to the accompanying drawings, humidity sensor based on organic field effect tube of the present invention, comprise to lower and on the substrate 1, gate electrode 2, gate insulator 3 and the organic semiconductor layer 4 that set gradually, the top of described organic semiconductor layer 4 is connected with source electrode 5 and drain electrode 6, described organic semiconductor layer 4 is made up of soluble organic semiconductor, add in described soluble organic semiconductor and have gelatin, the volume ratio of described solubility semiconductor and gelatin is 4:1-9:1.
Substrate 1 can adopt rigid substrate or flexible substrate, as the one in silicon chip, glass, thin polymer film and metal forming, has the ability of certain anti-steam and oxygen infiltration, has good surface smoothness.
Gate electrode 2, source electrode 5 and drain electrode 6 adopt has low-resistance material formation, as gold (Au), silver (Ag), magnesium (Mg), aluminium (Al), copper (Cu), calcium (Ca), barium (Ba), metal and the alloy materials thereof such as nickel (Ni), gate electrode, source electrode and drain electrode can adopt tin indium oxide (ITO), zinc-tin oxide (IZO) conductive film and conducing composite material, as gold size, elargol, carbon paste etc., preparation method can be vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, serigraphy, print, the various deposition process such as spin coating.The thickness of described source electrode and drain electrode is 10 ~ 100nm.
The material of described gate insulator 3 is inorganic insulating material or organic insulation; Described inorganic insulating material is silicon dioxide (SiO
2), alundum (Al2O3) (Al
2o
3), silicon nitride (Si
3n
4), titania (TiO
2) in one or more combination; Described organic insulation is one or more combination in polyvinyl alcohol (PVA) (PVA), polyimide (PI), polystyrene (PS), polymethylmethacrylate (PMMA), tygon (PE); Described gate insulating layer thickness is 20 ~ 520nm; Gate insulator is by a kind of method preparation in plasma enhanced chemical vapor deposition, thermal oxide, spin coating or vacuum evaporation.
Soluble organic semiconductor is aphthacene, pentacene and has substituent derivant, acetylene pentacene as silica-based in 6,13-bis-or three isopropyl ester, Oligopoly thiophene, it comprises four to eight thiophene of the 2nd and 5 positions being connected to thiphene ring, Asia puecon tetracarboxylic acid dianhydride (PTCDA), naphthalenetetracarbacidic acidic dianhydride (NTCDA), CuPc, Phthalocyanine Zinc, Cobalt Phthalocyanine, metallized phthalocyanine and halo derivatives fluorinatedcopperphthalocyanine (F thereof
16cuPc), CuPc (CuPc), sub-thienyl and 1, the low copolymer of 2-ethenylidene and multipolymer, Fullerene C20 and derivant, perylene Perylene thereof and derivant, Alpha-six thiophene, rubrene (Rubrene), polythiophene Polythiophene or poly-3-hexyl take fen poly (3-hexyithiophene) etc., and preparation method can be plasma enhanced chemical vapor deposition, thermal oxide, spin coating, vacuum evaporation, drip film, impression, printing or gas blowout etc.The thickness of described organic semiconductor layer is 25 ~ 400nm.
Below in conjunction with specific embodiment, invention is described further.
Embodiment one
1. the glass substrate having sputtered gate electrode ITO is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. adopt spin-coating method on ITO, prepare PS film and form gate insulator 100nm;
3. to the good PS film of spin coating through row heated baking;
4. spin coating P3HT on gate insulator: gelatin volume ratio is the organic semiconductor layer 100nm of 90:10;
5. vacuum evaporation is adopted to prepare copper source electrode and drain electrode 100nm.
The humidity response characteristic of device is tested, records the saturation current I of device
sD=5 μ A, carrier mobility μ=0.01 × 10
-3cm
2/ Vs, threshold voltage V
tH=-4V, under room temperature to humidity without response.
Embodiment two
1. the glass substrate 1 having sputtered gate electrode ITO is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. adopt spin-coating method on ITO, prepare PMMA film and form gate insulator 520nm;
3. to the good PMMA film of spin coating through row heated baking;
4. spin coating P3HT on gate insulator: gelatin volume ratio is the organic semiconductor layer 150nm of 85:15;
5. vacuum evaporation is adopted to prepare silver-colored source electrode and drain electrode 10nm.
The humidity response characteristic of device is tested, records the saturation current I of device
sD=7 μ A, carrier mobility μ=0.008 × 10
-3cm
2/ Vs, threshold voltage V
tH=-9V, to humidity difference in response under room temperature.
Embodiment three
1. the glass substrate 1 having sputtered gate electrode ITO is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. adopt spin-coating method on ITO, prepare PVA film and form gate insulator 20nm;
3. to the good PVA film of spin coating through row heated baking;
4. spin coating P3HT on gate insulator: gelatin volume ratio is the organic semiconductor layer 200nm of 80:20;
5. vacuum evaporation is adopted to prepare golden source electrode and drain electrode 40nm.
The humidity response characteristic of device is tested, records the saturation current I of device
sD=9 μ A, carrier mobility μ=0.02 × 10
-3cm
2/ Vs, threshold voltage V
tH=-8V, responds humidity under room temperature.
Embodiment four
1. the substrate that silicon is gate electrode is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. the method for thermal oxide or vapour deposition is adopted to generate one deck 20nmSiO
2as gate insulator;
3. on gate insulator, Tips-Pentacene is prepared in spin coating: gelatin volume ratio is the organic semiconductor layer 25nm of 88:12;
4. vacuum evaporation is adopted to prepare golden source electrode and drain electrode 60nm.
The humidity response characteristic of device is tested, records the saturation current I of device
sD=15 μ A, carrier mobility μ=0.05 × 10
-3cm
2/ Vs, threshold voltage V
tH=-6V, corresponding poor to humidity under room temperature.
Embodiment five
1. the substrate that silicon is gate electrode is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. adopt spin-coating method on ITO, prepare 300nm polyvinylpyrrolidone film and form gate insulator;
3. to the good polyvinylpyrrolidone film of spin coating through row heated baking;
4. on gate insulator, Tips-Pentacene is prepared in spin coating: gelatin volume ratio is the organic semiconductor layer 300nm of 84:16;
5. vacuum evaporation is adopted to prepare silver-colored source electrode and drain electrode 70nm.
The humidity response characteristic of device is tested, records the saturation current I of device
sD=17 μ A, carrier mobility μ=0.06 × 10
-3cm
2/ Vs threshold voltage V
tH=-8V, corresponding medium to humidity under room temperature.
Embodiment six
1. the glass substrate having sputtered gate electrode ITO is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. adopt reaction magnetocontrol sputtering on ITO, prepare 50nm alundum (Al2O3) film and form gate insulator;
3. on gate insulator, Tips-Pentacene is prepared in spin coating: gelatin volume ratio is the organic semiconductor layer 350nm of 82:18;
4. vacuum evaporation is adopted to prepare copper source electrode and drain electrode 80nm.
The humidity response characteristic of device is tested, records the saturation current I of device
sD=25 μ A, carrier mobility μ=0.04 × 10
-3cm
2/ Vs, threshold voltage V
tH=-5V is corresponding good to humidity under room temperature.
Embodiment seven
1. the glass substrate 1 having sputtered gate electrode ITO is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. adopt reaction magnetocontrol sputtering on ITO, prepare 50nm silicon nitride film and form gate insulator;
3. on gate insulator, Tips-Pentacene is prepared in spin coating: gelatin volume ratio is the organic semiconductor layer 400nm of 80:20;
4. vacuum evaporation is adopted to prepare golden source electrode and drain electrode 80nm.
The humidity response characteristic of device is tested, records the saturation current I of device
sD=20 μ A, carrier mobility μ=0.01 × 10
-3cm
2/ Vs, threshold voltage V
tH=-6V, very well corresponding to humidity under room temperature.
Table 1: the gelatin device parameter performance table adding different proportion
| Organic semiconducting materials and gelatin ratio | I SD(μA) | To the response of humidity under room temperature |
| P3HT: gelatin 90:10 | 5 | Without response |
| P3HT: gelatin 85:15 | 7 | Difference |
| P3HT: gelatin 80:20 | 9 | Good |
| TIPs-Pentacene: gelatin 88:12 | 15 | Difference |
| TIPs-Pentacene: gelatin 84:16 | 17 | Medium |
| TIPs-Pentacene: gelatin 82:18 | 25 | Good |
| TIPs-Pentacene: gelatin 80:20 | 20 | Very well |
Claims (9)
1. the humidity sensor based on organic field effect tube, comprise to lower and on the substrate, gate electrode, gate insulator and the organic semiconductor layer that set gradually, the top of described organic semiconductor layer is connected with source electrode and drain electrode, it is characterized in that, described organic semiconductor layer is made up of soluble organic semiconductor, add in described soluble organic semiconductor and have gelatin, the volume ratio of described solubility semiconductor and gelatin is 4:1-9:1.
2. the humidity sensor based on organic field effect tube according to claim 1, is characterized in that, described substrate is made up of silicon chip, glass, thin polymer film or metal forming.
3. the humidity sensor based on organic field effect tube according to claim 1, is characterized in that, the material of described gate insulator is inorganic insulating material or organic insulation; Described inorganic insulating material is one or more the combination in silicon dioxide, alundum (Al2O3), silicon nitride or titania; Described organic insulation be polyvinyl alcohol (PVA), polyimide, polystyrene, polymethylmethacrylate or poly in one or more combination; Described gate insulating layer thickness is 20 ~ 520nm.
4. the humidity sensor based on organic field effect tube according to claim 1, is characterized in that, described soluble organic semiconductor is one or both combination in poly-3-hexyl thiophene or Tips-pentacene; The thickness of described organic semiconductor layer is 25 ~ 400nm.
5. the humidity sensor based on organic field effect tube according to claim 1, is characterized in that, the material of described gate electrode, source electrode and drain electrode is gold, silver, copper one or more; Or the material of gate electrode, source electrode and drain electrode is one or both the combination of tin indium oxide conductive film or zinc-tin oxide conductive film; The thickness of described gate electrode, source electrode and drain electrode is 10 ~ 100nm.
6. based on a preparation method for the humidity sensor of organic field effect tube, it is characterized in that, comprise the following steps:
(1) substrate is cleaned, dry after cleaning;
(2) prepare gate electrode on the surface of substrate, form the figure of gate electrode;
(3) on gate electrode, gate insulator is prepared;
(4) on gate insulator, prepare organic semiconductor layer, the ratio being 4:1-9:1 according to the volume ratio of solubility semiconductor solution and gelatin solution is carried out miscible, prepares gelatin-organic semiconductor layer, and carries out annealing in process;
(5) on organic semiconductor layer, source electrode and drain electrode is prepared;
(6) organic field effect tube after step (5) being obtained encapsulates.
7. the preparation method of the humidity sensor based on organic field effect tube according to claim 6, it is characterized in that, in described step (2) and (5), gate electrode, source electrode, drain electrode are by a kind of method preparation in vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, serigraphy, printing or spin coating.
8. the preparation method of the humidity sensor based on organic field effect tube according to claim 6, it is characterized in that, in described step (3), gate insulator is by a kind of method preparation in plasma enhanced chemical vapor deposition, thermal oxide, spin coating or vacuum evaporation.
9. the preparation method of the humidity sensor based on organic field effect tube according to claim 6, it is characterized in that, in described step (4), gelatin-organic semiconductor layer is by plasma enhanced chemical vapor deposition, thermal oxide, spin coating, vacuum evaporation, roller coat, a kind of method preparation of dripping in film, impression, printing or gas blowout.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106198635A (en) * | 2016-07-13 | 2016-12-07 | 电子科技大学 | A kind of humidity sensor based on organic field effect tube and preparation method thereof |
| CN107192755A (en) * | 2017-05-23 | 2017-09-22 | 合肥工业大学 | A kind of preparation method of ultrathin membrane and organic field effect tube sensor based on it |
| CN107565019A (en) * | 2017-08-30 | 2018-01-09 | 电子科技大学 | One kind is based on organic field-effect tube ammonia gas sensor and preparation method thereof |
| CN108287189A (en) * | 2018-01-03 | 2018-07-17 | 电子科技大学 | A kind of organic field-effect tube humidity sensor and preparation method thereof based on synergistic effect |
| CN108539018A (en) * | 2018-01-24 | 2018-09-14 | 重庆大学 | A kind of OFET pipes driving and preparation method thereof based on pervasive insulating layer |
| CN109254238A (en) * | 2018-08-16 | 2019-01-22 | 华南师范大学 | A kind of C8-BTBT transistor humidity detection method |
| CN109949876A (en) * | 2018-05-25 | 2019-06-28 | 华中科技大学 | The method that crystal structure editor is carried out using non-equilibrium DC arc plasma |
| CN110286150A (en) * | 2019-06-21 | 2019-09-27 | 电子科技大学 | A kind of flexibility humidity electronic sensor and preparation method thereof |
| CN111180581A (en) * | 2019-12-30 | 2020-05-19 | 电子科技大学 | Humidity sensor based on organic thin film transistor and preparation method thereof |
| CN111505088A (en) * | 2020-04-14 | 2020-08-07 | 电子科技大学 | High-stability skin touch sensor and preparation method thereof |
| CN112697289A (en) * | 2020-12-09 | 2021-04-23 | 电子科技大学 | High-stability temperature sensor for body temperature monitoring and preparation method thereof |
| CN114674902A (en) * | 2022-05-27 | 2022-06-28 | 太原理工大学 | Thin film transistor for detecting C-reactive protein in ultra-low limit mode and preparation method thereof |
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| CN106198635A (en) * | 2016-07-13 | 2016-12-07 | 电子科技大学 | A kind of humidity sensor based on organic field effect tube and preparation method thereof |
| CN107192755A (en) * | 2017-05-23 | 2017-09-22 | 合肥工业大学 | A kind of preparation method of ultrathin membrane and organic field effect tube sensor based on it |
| CN107565019A (en) * | 2017-08-30 | 2018-01-09 | 电子科技大学 | One kind is based on organic field-effect tube ammonia gas sensor and preparation method thereof |
| CN108287189A (en) * | 2018-01-03 | 2018-07-17 | 电子科技大学 | A kind of organic field-effect tube humidity sensor and preparation method thereof based on synergistic effect |
| CN108287189B (en) * | 2018-01-03 | 2019-12-03 | 电子科技大学 | A kind of organic field-effect tube humidity sensor and preparation method thereof based on synergistic effect |
| CN108539018A (en) * | 2018-01-24 | 2018-09-14 | 重庆大学 | A kind of OFET pipes driving and preparation method thereof based on pervasive insulating layer |
| CN109949876A (en) * | 2018-05-25 | 2019-06-28 | 华中科技大学 | The method that crystal structure editor is carried out using non-equilibrium DC arc plasma |
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| CN110286150A (en) * | 2019-06-21 | 2019-09-27 | 电子科技大学 | A kind of flexibility humidity electronic sensor and preparation method thereof |
| CN111180581A (en) * | 2019-12-30 | 2020-05-19 | 电子科技大学 | Humidity sensor based on organic thin film transistor and preparation method thereof |
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Application publication date: 20160420 |