CN103630577A - Preparation method of OTFT(organic thin-film transistor)-based sulfur dioxide gas sensor - Google Patents
Preparation method of OTFT(organic thin-film transistor)-based sulfur dioxide gas sensor Download PDFInfo
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Abstract
The invention discloses a preparation method of an OTFT (organic thin-film transistor)-based sulfur dioxide gas sensor. The preparation method comprises the following steps: completely cleaning a substrate and then drying; preparing a gate electrode on the surface of the substrate to form a pattern of the gate electrode; preparing a dielectric layer on a base plate plated with the gate electrode; performing polar solvent treatment on the formed dielectric layer; preparing an organic semi-conductor layer on the formed gate electrode as well as on the base plate covered with the dielectric layer subjected to polar solvent treatment; then preparing a source electrode and a drain electrode to form a source electrode pattern and a drain electrode pattern, wherein the response ratio of gas is improved remarkably, and the lower limit of detected concentration is relatively low. Compared with a monocrystal transistor, an organic thin-film transistor is prepared more easily and is lower in cost; the organic thin-film transistor based on interface modification has a relatively high response speed and can realize rapid gas detection; the manufacturing cost is lowered, and the preparation method is relatively suitable for large scale and industrialized production.
Description
Technical field
The present invention relates to gas sensor field, be specifically related to a kind of preparation method based on OTFT sulfur dioxide gas body sensor.
Background technology
Sulphuric dioxide is a kind of colourless gas, has strong impulse smell.Society, along with the widespread use of coal and oil, sulphuric dioxide becomes a kind of main atmosphere pollution, and environmental and human health impacts is formed to huge threat.Because sulphuric dioxide is very easily water-soluble, thereby form, there is corrosive sulphurous acid.Therefore it has strong impulse effect to eyes and respiratory tract, and a large amount of suctions can cause pulmonary emphysema, the edema of the larynx etc., can cause and suffocate, crisis life when serious.And be exposed to for a long time in the atmosphere of sulphuric dioxide, can cause lung stringiness to become, further can cause lung fibre breakage to form pulmonary emphysema.In addition, sulphuric dioxide is also the one of the main reasons that acid rain forms.
Sulfur dioxide gas body sensor of a great variety, mainly comprises semiconductor gas sensor, electrochemical gas sensor, catalytic combustion type gas sensor and solid-state electrolyte gas sensor etc.Current, study hotspot both domestic and external is mainly semiconductor gas sensor, generally by the interaction of sulphuric dioxide and inorganic oxide film, changes the characteristic of device, thereby realizes effective detection of gas and the monitoring to environment.And based on organic semi-conductor OTFT (Organic Thin-Film Transistor, OTFT) sulfur dioxide gas body sensor, as a kind of novel gas sensor, compare with inorganic oxide resistance-type gas sensor, except having, material source is extensive, technique is simple, the features such as realizability of long service life and flexible substrate, have more that selectivity is high, response is fast and can working and room temperature etc. advantage.Meanwhile, OTFT gas sensor agrees with compared with strong selectivity, highly sensitive requirement mutually with market-oriented sensor, becomes a focus of novel sensor research field in recent years.
At present, with the correlative study of OTFT gas sensor, concentrate on the aspects such as synthetic, the new device structure design of the material of organic semiconductor thin-film and circuit noise abatement, still, for the research of dielectric layer modification, still lack.A large amount of scientific research finds, because the surface of dielectric layer directly contacts with conducting channel, therefore, its character will directly affect the performance of the gas sensor based on OTFT.
Summary of the invention
The present invention provides a kind of preparation method of the sulfur dioxide gas body sensor based on OTFT for solving problems of the prior art, object is to overcome the problems such as the susceptibility that existing OTFT sulfur dioxide gas body sensor exists is low, response speed slow, poor stability, by the modifying interface to dielectric layer surface, obtain the gas sensing device with hypersensitivity energy, rapid response speed and high stability.
To achieve these goals, the technical solution used in the present invention is:
A preparation method based on OTFT sulfur dioxide gas body sensor, is characterized in that, comprises the following steps:
1. first substrate is cleaned thoroughly, dry after cleaning;
2. on the surface of substrate, prepare gate electrode, form the figure of gate electrode;
3. be coated with gate electrode substrate on prepare dielectric layer;
4. the dielectric layer forming is carried out to polar solvent processing;
5. forming gate electrode, and oneself covering is prepared organic semiconductor layer on the substrate of the dielectric layer of polar solvent processing;
6. then prepare source electrode and drain electrode, form source electrode, drain electrode pattern;
As preferably, described step 4. in, polar solvent comprises water, formamide, trifluoroacetic acid, dimethyl sulfoxide (DMSO), acetonitrile dimethyl formamide, hexamethyl phosphoramide, methyl alcohol, ethanol, acetic acid, isopropyl alcohol, pyridine, tetramethylethylenediamine, acetone, triethylamine, normal butyl alcohol, dioxane, tetrahydrofuran, methyl formate, three fourth ammonia, MEK, ethyl acetate, trioctylamine, dimethyl carbonate, ether, isopropyl ether, methyl phenyl ethers anisole, n-butyl ether, triclene, diphenyl ether, methylene chloride or methenyl choloride.
As preferably, described step 4. in, it is smoked that polar solvent processing mode comprises that solvent soaking or solvent steam.
As preferably, described step 3. in, dielectric layer comprises silicon dioxide, alundum (Al2O3), tantalum pentoxide, silicon nitride, titania, hafnium oxide, polyvinyl alcohol (PVA), polyimide, polyvinylpyrrolidone, polystyrene, polymethylmethacrylate or tygon, and medium thickness is 5 ~ 2000 nm.
As preferably, described step 1. in, substrate is made by silicon chip, glass, thin polymer film or metal forming.
As preferably, described step 5. in, organic semiconductor layer comprises aphthacene, pentacene, 6, the silica-based acetylene pentacene of 13-bis-or three isopropyl ester, CuPc, Phthalocyanine Zinc, Cobalt Phthalocyanine, rubrene, six thiophene, polythiophene or fullerene, and organic semiconductor layer thickness is 2 ~ 100 nm.
As preferably, described step 6. in, described gate electrode, source electrode and drain electrode are made by metal and alloy material, metal oxide or conducing composite material, the thickness of source electrode and drain electrode is 10 ~ 100 nm.
As preferably, described step 6. in, gate electrode, source electrode, drain electrode are prepared by a kind of method in chemical vapor deposition, serigraphy, printing or the spin coating strengthening by vacuum thermal evaporation, magnetron sputtering, plasma.
As preferably, described step 3. in, described dielectric layer is prepared by a kind of method in chemical vapor deposition, thermal oxide, spin coating or the vacuum evaporation strengthening by plasma;
As preferably, described step 5. in, prepared by a kind of method that described organic semiconductor layer is the chemical vapor deposition that strengthens by plasma, thermal oxide, spin coating, vacuum evaporation, roller coat, drip in film, impression, printing or gas blowout.
The invention provides a kind of preparation method of the sulfur dioxide gas body sensor based on OTFT, through the dielectric layer surface of modifying, larger functional group densities will be had, the dielectric layer surface topography that has more chemically active carrier traps or more optimize, and dielectric layer surface is just in time adjacent with carrier channels, therefore when gas is diffused into carrier channels, the surperficial character of dielectric layer changes the greatly interaction of lift gas and dielectric layer, and then can realize more gas absorption, thereby realize the change of charge carrier transmission conditions in raceway groove, to realize high sensitivity and the quick response function of gas.
In addition, because the surface nature of dielectric layer has directly determined the organic semi-conductor pattern of growth thereon, and the dielectric layer surface of processing through polar solvent becomes more obviously because its surface can rise and fall after processing and is violent, therefore the organic semiconductor layer of growth will trend towards forming the pattern with less crystal grain thereon, when crystal grain more hour, mean and in organic semiconductor, exist more crystal grain gap, this will be conducive to gas and be diffused in the middle of carrier channels more rapidly, thereby reach the effect that detects faster and better gas.
Compared with prior art, the present invention has following beneficial effect:
1, polar solvent processing had been passed through in dielectric layer surface before the organic semiconductor layer forming on it, and the responsiveness of gas significantly promotes, and detecting concentration lower limit is lower;
2, polar solvent processing had been passed through in dielectric layer surface before the organic semiconductor layer forming on it, the transistor of relative monocrystalline, and OTFT is more prone to preparation, and cost is lower;
3, polar solvent processing had been passed through in dielectric layer surface before the organic semiconductor layer forming on it, and the OTFT based on modifying interface will have response speed faster, can realize the fast detecting of gas;
4, polar solvent processing had been passed through in dielectric layer surface before the organic semiconductor layer forming on it, had reduced production cost, large-scale industrialized production preferably.
Accompanying drawing explanation
Fig. 1 is bottom gate apical grafting touch gas sensor configuration schematic diagram of the present invention;
Fig. 2 is contact gas sensor configuration schematic diagram at the bottom of bottom gate of the present invention;
Fig. 3 is the time m-source-drain current figures of two kinds of different components of the present invention under different nitrogen dioxide atmosphere, and device A processes without polar solvent, and device B processes through polar solvent;
In figure: 1-substrate, 2-gate electrode, 3-dielectric layer, 4-organic semiconductor layer, 5-source electrode, 6-drain electrode.
Embodiment
Based on OTFT sulfur dioxide gas body sensor, comprise substrate, gate electrode, dielectric layer, organic semiconductor, source electrode and drain electrode, polar solvent processing had been passed through in described dielectric layer surface before the organic semiconductor layer forming on it.
Substrate can adopt rigid substrate or flexible substrate, and a kind of as in silicon chip, glass, thin polymer film and metal forming has the ability of certain anti-steam and oxygen infiltration, has good surface smoothness.
Gate electrode, source electrode and drain electrode adopt has low-resistance material formation, as metal and alloy materials thereof such as gold (Au), silver (Ag), magnesium (Mg), aluminium (Al), copper (Cu), calcium (Ca), barium (Ba), nickel (Ni), metal oxide, as tin indium oxide (ITO), zinc-tin oxide (IZO) conductive film and conducing composite material, as gold size, elargol, carbon paste etc., preparation method can be the various deposition processs such as the chemical vapor deposition that strengthens of vacuum thermal evaporation, magnetron sputtering, plasma, serigraphy, printing, spin coating.The thickness of described source electrode and drain electrode is 10 ~ 100 nm.
Gate dielectric adopts the material with good dielectric properties, and inorganic insulating material is as silicon dioxide (SiO2), silicon nitride (Si3N4), aluminium oxide (A12O3), lithium fluoride (LiF), titania (TiO2), hafnium oxide (HfO2), five oxidation two smooth (Ta2O5); Organic insulation is as polyvinyl alcohol (PVA) (PVA), Polyvinylchloride (PVC), polyvinylpyrrolidone (PVP), polystyrene (PS), polymethylmethacrylate (PMMA), poly-ethyl propylene acid esters (PCA), teflon (PTFE), polyimide (PI) or tygon (PE) etc., and preparation method can be chemical vapor deposition, thermal oxide, spin coating or the vacuum evaporation etc. that plasma strengthens.The thickness of described gate dielectric is 5 ~ 2000 nm.
Organic semiconductor detecting layer adopts aphthacene, pentacene, and there is substituent derivant, 6, the silica-based acetylene pentacene of 13-bis-or three isopropyl ester, Oligopoly thiophene, four to eight thiophene that it comprises the 2nd and 5 positions that are connected to thiphene ring, Asia puecon tetracarboxylic acid dianhydride (PTCDA), naphthalenetetracarbacidic acidic dianhydride (NTCDA), CuPc, Phthalocyanine Zinc, Cobalt Phthalocyanine, metallization phthalocyanine and halo derivatives fluorinated copper phthalocyanine (F16CuPc) thereof, CuPc (CuPc), sub-thienyl and 1, the low copolymer of 2-ethenylidene and multipolymer, fullerene C60 and derivant thereof, perylene Perylene and derivant thereof, Alpha-six thiophene, rubrene (Rubrene), polythiophene Polythiophene or poly-3-hexyl are taken fen poly (3-hexyithiophene) etc., preparation method can be the chemical vapor deposition that plasma strengthens, thermal oxide, spin coating, vacuum evaporation, drip film, impression, printing or gas blowout etc.The thickness of described organic semiconductor detecting layer is 2 ~ 100 nm.
In the mode that polar solvent is processed, polar solvent comprises water, formamide, trifluoroacetic acid, dimethyl sulfoxide (DMSO), acetonitrile dimethyl formamide, hexamethyl phosphoramide, methyl alcohol, ethanol, acetic acid, isopropyl alcohol, pyridine, tetramethylethylenediamine, acetone, triethylamine, normal butyl alcohol, dioxane, tetrahydrofuran, methyl formate, three fourth ammonia, MEK, ethyl acetate, trioctylamine, dimethyl carbonate, ether, isopropyl ether, methyl phenyl ethers anisole, n-butyl ether, triclene, diphenyl ether, methylene chloride or methenyl choloride.It is smoked that processing mode comprises that solvent soaking or solvent steam.The solvent soaking time is 10 ~ 10000 seconds, and the stifling time of solvent is 1 ~ 300 minute.
Polar solvent is processed as a kind of simple and practical surface treatment method, in all many-sides, is all widely used, as: the organic thin film solar cell interface of processing through solvent, can make the efficiency of organic thin film solar cell reach effective lifting; The aspects such as preparation at polymkeric substance play booster action, and the polymkeric substance of having realized is rapidly and efficiently synthetic.Polar solvent is processed to be proved and can be reached good modifying function to the dielectric layer of OTFT.The restructuring of modification to the surface energy, surfacing component or the effect that surface topography is optimized can be realized in the dielectric layer surface of processing through polar solvent, therefore the OTFT sensor of, processing through polar solvent based on dielectric layer will have huge room for promotion with respect to traditional at aspects such as sensitivity, selectivity, stability and response times without polar solvent processing transistor sensor.
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Be illustrated in figure 1 bottom gate apical grafting touch structure.The material of each layer of device and thickness are: substrate 1 is glass, gate electrode 2 is ITO, thickness is 120 nm, gate dielectric 3 is PS, and thickness is 500 nm, and its dielectric layer 3 soaks 10 seconds in ether solvent, organic semiconductor is pentacene, thickness is 2 nm, and source electrode 5 and drain electrode 6 are Au, and thickness is 10 nm.
Preparation method is as follows:
1. the glass substrate 1 of the good gate electrode ITO of sputter is cleaned thoroughly, after cleaning, with drying nitrogen, dry up;
2. adopt spin-coating method on ITO, to prepare PS film and form gate dielectric 3;
3. to the good PS film of spin coating through row heated baking;
4. dielectric layer 3 is soaked 10 seconds in ether solvent;
5. adopt vacuum evaporation to prepare pentacene organic semiconductor layer 4;
6. adopt vacuum evaporation to prepare source electrode 5 and drain electrode 6.
As shown in Figure 1, the material of each layer of sensor and thickness are: substrate 1 is glass, gate electrode 2 is ITO, and thickness is 120 nm, and gate dielectric 3 is PMMA, thickness is 200 nm, its dielectric layer 3 steams smoked 1 minute under IPA vapor, and organic semiconductor detecting layer 4 is CuPc, and thickness is 10 nm, source electrode 5 and drain electrode 6 are Au, and thickness is 50 nm.
Preparation method is as follows:
1. the glass substrate 1 of the good gate electrode ITO of sputter is cleaned thoroughly, after cleaning, with drying nitrogen, dry up;
2. adopt spin-coating method on ITO, to prepare PMMA film and form gate dielectric 3;
3. to the good PMMA film of spin coating through row heated baking;
4. dielectric layer 3 is steamed under IPA vapor smoked 1 minute;
5. adopt vacuum evaporation to prepare CuPc organic semiconductor layer 4;
6. adopt vacuum evaporation to prepare source electrode 5 and drain electrode 6.
As shown in Figure 1, the material of each layer of sensor and thickness are: substrate 1 is glass, gate electrode 2 is ITO, and thickness is 120 nm, and gate dielectric 3 is PVA, thickness is 2000 nm, its dielectric layer 3 soaks 60 seconds in methenyl choloride solvent, and organic semiconductor detecting layer 4 is six thiophene, and thickness is 25 nm, source electrode 5 and drain electrode 6 are Au, and thickness is 50 nm.
Preparation method is as follows:
1. the glass substrate 1 of the good gate electrode ITO of sputter is cleaned thoroughly, after cleaning, with drying nitrogen, dry up;
2. adopt spin-coating method on ITO, to prepare PVA film and form gate dielectric 3;
3. to the good PVA film of spin coating through row heated baking;
4. dielectric layer 3 is placed in methenyl choloride solvent and is soaked 60 seconds;
5. adopt vacuum evaporation to prepare six thiophene organic semiconductor layers 4;
6. adopt vacuum evaporation to prepare source electrode 5 and drain electrode 6.
As shown in Figure 2, the material of each layer of sensor and thickness are: substrate 1 is silicon chip, gate electrode 2 is silicon, gate dielectric 3 is silicon dioxide, and thickness is 5 nm, and its dielectric layer 3 soaks 10000 seconds in acetone solvent, source electrode 5 and drain electrode 6 are Au, thickness is 50 nm, and organic semiconductor detecting layer 4 is rubrene, and thickness is 25 nm.
Its preparation method is as follows:
1. the substrate 1 that is gate electrode to silicon cleans thoroughly, after cleaning, with drying nitrogen, dries up;
2. adopt the method for thermal oxide or vapour deposition to generate one deck SiO
2as gate dielectric 3;
3. dielectric layer 3 is soaked 10000 seconds in acetone solvent;
4. at SiO
2source electrode 5 and drain electrode 6 are prepared by the method for vacuum evaporation or sputter in surface;
5. adopt vacuum evaporation to prepare rubrene organic semiconductor layer 4.
As shown in Figure 2, the material of each layer of sensor and thickness are: substrate 1 is silicon chip, gate electrode 2 is silicon, gate dielectric 3 is polyvinylpyrrolidone, thickness is 100 nm, and its dielectric layer 3 steams smoked 2 minutes in tetrahydrofuran steam, and source electrode 5 and drain electrode 6 are Ag, thickness is 50 nm, and organic semiconductor detecting layer 4 is F
16cuPc, thickness is 25 nm.
Its preparation method is as follows:
1. the substrate 1 that is gate electrode to silicon cleans thoroughly, after cleaning, with drying nitrogen, dries up;
2. adopt spin-coating method on ITO, to prepare polyvinylpyrrolidone film and form gate dielectric 3;
3. to the good polyvinylpyrrolidone film of spin coating through row heated baking;
3. dielectric layer 3 is steamed in tetrahydrofuran steam smoked 2 minutes;
4. on polyvinylpyrrolidone surface, by the method for vacuum evaporation or sputter, prepare source electrode 5 and drain electrode 6;
5. adopt vacuum evaporation to prepare F
16cuPc organic semiconductor layer 4.
As shown in Figure 1, the material of each layer of sensor and thickness are: substrate 1 is glass, gate electrode 2 is ITO, and thickness is 120 nm, and gate dielectric 3 is alundum (Al2O3), thickness is 50 nm, its dielectric layer 3 steams smoked 300 minutes in ethyl acetate steam, and organic semiconductor detecting layer 4 is fullerene, and thickness is 25 nm, source electrode 5 and drain electrode 6 are Ag, and thickness is 30 nm.
Preparation method is as follows:
1. the glass substrate 1 of the good gate electrode ITO of sputter is cleaned thoroughly, after cleaning, with drying nitrogen, dry up;
2. adopt reaction magnetocontrol sputtering on ITO, to prepare alundum (Al2O3) film and form gate dielectric 3;
3. dielectric layer 3 is steamed in ethyl acetate steam smoked 300 minutes;
4. adopt vacuum evaporation to prepare fullerene organic semiconductor layer 4;
5. adopt vacuum evaporation to prepare source electrode 5 and drain electrode 6.
Embodiment 7
As shown in Figure 2, the material of each layer of sensor and thickness are: substrate 1 is glass, gate electrode 2 is ITO, and thickness is 120 nm, and gate dielectric 3 is silicon nitride, thickness is 20 nm, its dielectric layer 3 soaks 500 seconds in three fourth ammonia solutions, and source electrode 5 and drain electrode 6 are Cu, and thickness is 100 nm, organic semiconductor detecting layer 4 is pentacene, and thickness is 100 nm.
Preparation method is as follows:
1. the glass substrate 1 of the good gate electrode ITO of sputter is cleaned thoroughly, after cleaning, with drying nitrogen, dry up;
2. adopt reaction magnetocontrol sputtering on ITO, to prepare silicon nitride film and form gate dielectric 3;
3. dielectric layer 3 is soaked 500 seconds in three fourth ammonia solutions;
4. in silicon nitride surface, by the method for vacuum evaporation or sputter, prepare source electrode 5 and drain electrode 6;
5. adopt vacuum evaporation to prepare pentacene organic semiconductor layer 4.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment is the object for giving an example and illustrating just, but not is intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, according to instruction of the present invention, can also make more kinds of variants and modifications, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (10)
1. the preparation method based on OTFT sulfur dioxide gas body sensor, is characterized in that, comprises the following steps:
1. first substrate is cleaned thoroughly, dry after cleaning;
2. on the surface of substrate, prepare gate electrode, form the figure of gate electrode;
3. be coated with gate electrode substrate on prepare dielectric layer;
4. the dielectric layer forming is carried out to polar solvent processing;
5. forming gate electrode, and oneself covering is prepared organic semiconductor layer on the substrate of the dielectric layer of polar solvent processing;
6. then prepare source electrode and drain electrode, form source electrode, drain electrode pattern.
2. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, it is characterized in that: described step 4. in, polar solvent comprises water, formamide, trifluoroacetic acid, dimethyl sulfoxide (DMSO), acetonitrile dimethyl formamide, hexamethyl phosphoramide, methyl alcohol, ethanol, acetic acid, isopropyl alcohol, pyridine, tetramethylethylenediamine, acetone, triethylamine, normal butyl alcohol, dioxane, tetrahydrofuran, methyl formate, three fourth ammonia, MEK, ethyl acetate, trioctylamine, dimethyl carbonate, ether, isopropyl ether, methyl phenyl ethers anisole, n-butyl ether, triclene, diphenyl ether, methylene chloride or methenyl choloride.
3. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, is characterized in that: described step 4. in, it is smoked that polar solvent processing mode comprises that solvent soaking or solvent steam.
4. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, it is characterized in that: described step 3. in, dielectric layer comprises silicon dioxide, alundum (Al2O3), tantalum pentoxide, silicon nitride, titania, hafnium oxide, polyvinyl alcohol (PVA), polyimide, polyvinylpyrrolidone, polystyrene, polymethylmethacrylate or tygon, and medium thickness is 5 ~ 2000 nm.
5. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, is characterized in that: described step 1. in, substrate is made by silicon chip, glass, thin polymer film or metal forming.
6. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, it is characterized in that: described step 5. in, organic semiconductor layer comprises aphthacene, pentacene, 6, the silica-based acetylene pentacene of 13-bis-or three isopropyl ester, CuPc, Phthalocyanine Zinc, Cobalt Phthalocyanine, rubrene, six thiophene, polythiophene or fullerene, organic semiconductor layer thickness is 2 ~ 100 nm.
7. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, it is characterized in that: described step 6. in, described gate electrode, source electrode and drain electrode are made by metal and alloy material, metal oxide or conducing composite material, and the thickness of source electrode and drain electrode is 10 ~ 100 nm.
8. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, it is characterized in that: described step 6. in, gate electrode, source electrode, drain electrode are prepared by a kind of method in chemical vapor deposition, serigraphy, printing or the spin coating strengthening by vacuum thermal evaporation, magnetron sputtering, plasma.
9. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, it is characterized in that: described step 3. in, described dielectric layer is prepared by a kind of method in chemical vapor deposition, thermal oxide, spin coating or the vacuum evaporation strengthening by plasma.
10. the preparation method based on OTFT sulfur dioxide gas body sensor according to one kind of claim 1, it is characterized in that: described step 5. in, prepared by a kind of method that described organic semiconductor layer is the chemical vapor deposition that strengthens by plasma, thermal oxide, spin coating, vacuum evaporation, roller coat, drip in film, impression, printing or gas blowout.
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| CN104132989A (en) * | 2014-08-01 | 2014-11-05 | 电子科技大学 | Organic field-effect tube gas sensor based on mixed insulating layer and preparation method thereof |
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| CN112736199B (en) * | 2019-10-28 | 2023-03-24 | 天津大学 | C8-BTBT (British Bittery-based) single crystal film, preparation method thereof and organic field effect transistor based on C8-BTBT single crystal film |
| CN111505089A (en) * | 2020-04-24 | 2020-08-07 | 电子科技大学 | Sulfur dioxide sensor based on organic field effect transistor and preparation method thereof |
| CN111505089B (en) * | 2020-04-24 | 2021-08-10 | 电子科技大学 | Sulfur dioxide sensor based on organic field effect transistor and preparation method thereof |
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