CN106025070A - Photomultiplier organic light detector with spectral selectivity and preparation method of photomultiplier organic light detector - Google Patents
Photomultiplier organic light detector with spectral selectivity and preparation method of photomultiplier organic light detector Download PDFInfo
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Abstract
The invention provides a photomultiplier organic light detector with spectral selectivity. The photomultiplier organic light detector comprises a transparent substrate (1), a transparent electrode (2), a transparent electrode modifying layer (3), an active layer (4) and a metal electrode (5), wherein the transparent electrode (2) is arranged on the transparent substrate (1); the transparent electrode modifying layer (3) is arranged on the transparent electrode (2); the active layer (4) is arranged on the transparent electrode modifying layer (3); the metal electrode (5) is arranged on the active layer (4); the active layer is a blend film of an electron donor material and an electron acceptor material; the thickness of the film is 2.0-5.0 microns; the weight ratio of an electron donor material to the electron acceptor material in the active layer is 100 to 1; the electron donor material is a poly(3-exylthiophene) (P3HT) or perylene polymer (PBDT-TS1); and the electron acceptor material is a fullerene derivative (PCBM, ICBA) or a non-fullerene receptor (ITIC).
Description
Technical field
The present invention relates to optical detection field.More particularly, to the photomultiplier transit type with spectral selection
Organic photodetector and preparation method thereof.
Background technology
Organic semiconducting materials due to its extinction coefficient height, low cost, green, can be made into large area flexible
Device and enjoy the concern of people.Along with the development of organic semiconducting materials, based on organic material
Opto-electronic device performance there has also been and increases substantially, and the research of organic photodetector also enjoys the concern of people.
The organic photodetector of document report is based primarily upon organic photovoltaic effect at present.Organic material capture sunlight
Son and produce exciton, exciton diffusion, to the interface of acceptor material, is dissociated into free carrier, current-carrying
Son is collected by electrode, thus produces photogenerated current, it is achieved detection and the response to light.Due to by material
Extinction coefficient, exciton fission efficiency, carrier transport and the impact of collection efficiency, this kind of photo-detector
External quantum efficiency is both less than 100%, and for the low light level or superweak optical detection, the responsiveness of device just receives limit
System.Therefore, such detector needs to add preamplifier in actual applications, enters the faint signal of telecommunication
Row sampling, amplification, thus realize the detection to faint light, use preamplifier then can increase detection
The cost of system, brings new noise simultaneously.
Organic photodetector based on photovoltaic effect, it is impossible to directly prepare and there is having of spectral selection
Machine photo-detector, its active layer is to adulterate by weight the ratio for 1:0.8 to 1:4 to acceptor material, from
And realize high efficiency exciton fission and carrier transport.Two kinds of organic semiconducting materials make the light of device
Spectrum response range is wider, and the organic photodetector of preparation does not have spectral selection, its spectral response range
It is typically greater than 100nm.The organic photodetector with spectral selection has widely in many fields
Application, such as image, medical science sensing, security system etc., the common feature in these fields is to need detection
The light of particular range of wavelengths and ignore background noise.In order to improve the spectral selection of organic photodetector,
Common practice is by logical with dichroic prism or band for the photo-detector of wide spectral response range optical lightscreening
Device is coupled.This can increase the complexity of organic photodetector manufacturing cost and application undoubtedly, also can
Cause the reduction of device performance.Additionally, business-like band leads to optical filter does not cover all application
Required wave band so that the full width at half maximum (FWHM) of device is more than 50nm.
Summary of the invention
It is an object of the present invention to provide a kind of organic light of photomultiplier transit type with spectral selection to visit
Survey device, with relatively low cost and simple device architecture, it is achieved photomultiplier transit and optical electivity function.
A kind of organic light of photomultiplier transit type with spectral selection of offer is provided
The preparation method of detector, with simple preparation method, it is achieved photomultiplier transit and optical electivity function.
For reaching above-mentioned purpose, the present invention uses following technical proposals:
There is the photomultiplier transit type organic photodetector of spectral selection, including:
Transparent substrates (1)；
The transparency electrode (2) being arranged in this transparent substrates (1)；
The transparency electrode decorative layer (3) being arranged in this transparency electrode (2)；
It is arranged on the active layer (4) on this transparency electrode decorative layer (3)；And
The metal electrode (5) being arranged on this active layer (4),
Wherein, described active layer is the blend film of electron donor material and electron acceptor material, described thin
Film thickness is 2.0-5.0 μm；In described active layer, the weight ratio of electron donor and electron acceptor material is 100:
1；Wherein, described electron donor material is poly-(3-hexyl thiophene) (P3HT) or base polymer
(PBDT-TS1), described electron acceptor material is fullerene derivate (PCBM, ICBA) or non-lipid
Strangle alkene receptor (ITIC).
Preferably, described transparent substrates is glass.
Preferably, described transparency electrode is indium tin oxide (ITO).
Preferably, described transparency electrode decorative layer is by poly-(3,4-rthylene dioxythiophene)-polystyrolsulfon acid
(PEDOT:PSS), molybdenum oxide (MoO3) or [9,9-dioctyl fluorene-9,9-is double (N, N-DimethylAminopropyl)
Fluorenes] (PFN) composition.
Preferably, described metal electrode is aluminum or silver, and thickness is 100nm.
Preferably, the blend film thickness of described active layer is 2.0 μm.
There is the preparation method of the photomultiplier transit type organic photodetector of spectral selection, comprise the following steps:
Step 1: using glass as transparent substrates；
Step 2: prepare transparency electrode in described transparent substrates；
Step 3: prepare transparency electrode decorative layer in described transparency electrode；
Step 4: prepare active layer on described transparency electrode decorative layer, including: by poly-(3-hexyl thiophene)
Or base polymer (PBDT-TS1) is as electron donor material, by fullerene derivate (P3HT)
(PCBM, ICBA) or non-fullerene acceptor (ITIC) are as electron acceptor material；Described electronics is given
Body material and described electron acceptor material are dissolved in o-dichlorohenzene (o-DCB) according to weight ratio 100:1, system
Standby one-tenth mixed solution, by uniform for described mixed solution drop coating on the transparency electrode decorative layer of preparation, then adds
Heat makes o-dichlorohenzene (o-DCB) quickly volatilize, and leaving thickness is 2.0-5.0 μm electron donor material and electricity
The blend film of sub-acceptor material is as active layer, and wherein, described heating-up temperature is 80-120 DEG C；
Step 5: prepare metal electrode on described active layer.
Preferably, step 2 farther includes: be plated in described transparent substrates by indium tin oxide (ITO),
It is soaked in the most respectively in deionized water, dehydrated alcohol, then cleans with ultrasonic washing instrument；Clean up
Dry up with nitrogen afterwards, then process 1min with plasma cleaning instrument.
Preferably, step 3 farther includes: spin coating poly-(3,4-in the transparency electrode prepared in step 2
Ethene dioxythiophene)-polystyrolsulfon acid (PEDOT:PSS) or [9,9-dioctyl fluorene-9,9-double (N, N-
DimethylAminopropyl) fluorenes] (PFN), wherein spin coating speed is 5000r/min, spin-coating time 40s, poly-(3,4-
Ethene dioxythiophene)-polystyrolsulfon acid (PEDOT:PSS) consumption is 80 μ L；It is placed on after spin coating
Anneal on the warm table of 150 DEG C 10min；Or with 0.2nm/s's in the transparency electrode prepared in step 2
Speed is deposited with the molybdenum oxide (MoO that one layer of 10nm is thick3)。
Preferably, step 5 farther includes: is put into by the sample obtained in step 4 and is placed with aluminium wire
In vacuum chamber, described vacuum degree in vacuum chamber is less than 1 × 10-4Pa；Heating aluminium wire makes it evaporate, evaporation rate
For 0.2nm/s, evaporation thickness is 100nm.
Beneficial effects of the present invention is as follows:
1, the full width at half maximum (FWHM) of described organic photodetector method is less than 30nm, and then has light
Spectral selectivity；
2, described organic photodetector has the external quantum efficiency more than 100% and device architecture is simple；
3, described organic photodetector preparation method is economical and simple.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described in further detail.
Fig. 1 illustrates organic photodetector structural representation of the present invention.
Fig. 2 illustrates that of the present invention is having of active layer based on 1.0 μ m-thick P3HT:PCBM (100:1)
Machine photo-detector external quantum efficiency spectra curve under-20V biases.
Fig. 3 illustrates of the present invention based on 2.0 μm, 2.5 μm, 5.0 μm and 7.5 μ m-thick P3HT:PCBM
(100:1) be active layer organic photodetector-20V bias under external quantum efficiency spectra curve.
Fig. 4 illustrates the method for the invention flow chart.
Fig. 5 illustrates that of the present invention is having of active layer based on 2.0 μ m-thick P3HT:PCBM (100:1)
Machine photo-detector external quantum efficiency spectra curve under-20V biases.
Fig. 6 illustrates that of the present invention is having of active layer based on 2.0 μ m-thick P3HT:PCBM (100:1)
Machine photo-detector sensitivity curve under-20V biases.
Detailed description of the invention
In order to be illustrated more clearly that the present invention, below in conjunction with preferred embodiments and drawings, the present invention is done into one
The explanation of step.Parts similar in accompanying drawing are indicated with identical reference.Those skilled in the art
Should be appreciated that following specifically described content is illustrative and be not restrictive, should not limit with this
Protection scope of the present invention.
As it is shown in figure 1, there is the photomultiplier transit type organic photodetector of spectral selection, including transparent base
The end 1；It is arranged on the transparency electrode 2 in this transparent substrates 1；It is arranged on the transparent electrical in this transparency electrode 2
Pole decorative layer 3；It is arranged on the active layer 4 on this transparency electrode decorative layer 3；And it is arranged on this active layer
(4) metal electrode 5 on.
Described transparent substrates 1 is glass, and described transparency electrode 2 is indium tin oxide (ITO), described
Prescribed electrode decorative layer 3 is poly-(3,4-ethene dioxythiophene)-polystyrolsulfon acid (PEDOT:PSS), oxygen
Change molybdenum (MoO3) or [double (N, the N-DimethylAminopropyl) fluorenes of 9,9-dioctyl fluorene-9,9-] (PFN).
Described active layer 4 is the blend film of electron donor material and electron acceptor material, in the present invention,
Blend film thickness is chosen as 2.0-5.0 μm.Electron donor material is poly-(3-hexyl thiophene) (P3HT)
Or base polymer (PBDT-TS1), electron acceptor material is fullerene derivate (PCBM, ICBA)
Or non-fullerene acceptor (ITIC), electron donor-acceptor (EDA) material is by weight for 100:1 proportioning.
Wherein, the weight ratio of the electron donor-acceptor (EDA) material of active layer 4 is 100:1, by using a small amount of electronics to be subject to
Body mass ratio in the devices obtains photomultiplier transit response, and device has the external quantum efficiency more than 100%,
Reduce the preparation cost of device simultaneously；By regulating and controlling the thickness of active layer, organic photodetector is made to have light
Spectral selectivity.
Concrete, described active layer 4 absorbs a photon and a lot of carrier just can be caused to flow through device, from
And obtaining bigger photoelectric current, its working mechanism is: the electronic induction interface energy band near interface trap is curved
Song, thus reduce hole injection barrier, strengthen the hole tunneling injection from external circuit, it is thus achieved that bigger photoelectricity
Stream.
If it should be noted that active layer 4 blend film thickness is less than 2.0 μm, as in figure 2 it is shown, then
The external quantum efficiency of device also can produce an external quantum efficiency peak value at short-wave band, and device is at full spectrum
In the range of just have two external quantum efficiency peak values, this just have impact on the spectral selection of device；Such as Fig. 3 institute
Showing, the external quantum efficiency of device can lower, if had along with the increase of active layer 4 blend film thickness
Active layer 4 blend film thickness is between 5.0-7.5 μm, although in the range of segment thickness, external quantum efficiency is still
More than 100%, but in view of the error in reality application, in order to ensure that device still has photomultiplier transit effect
Should, so blend film should maintain between 2.0-5.0 μm.
Further, 2.0 μm and 5.0 μm are that organic photodetector described in actual application keeps arrowband to visit
Survey (i.e. spectral selection) and two marginal values of photomultiplier transit response.
As shown in Figure 4, described organic photodetector preparation process is as follows:
Step 1: using glass as transparent substrates.
Step 2: indium tin oxide (ITO) is plated in described transparent substrates, is soaked in the most respectively
In ionized water, dehydrated alcohol, then clean with ultrasonic washing instrument；Dry up with nitrogen after cleaning up, then
1min is processed with plasma cleaning instrument.
Step 3: spin coating poly-(3,4-ethene dioxythiophene) on indium tin oxide (ITO) layer in step 2
-polystyrolsulfon acid (PEDOT:PSS) or [double (N, the N-DimethylAminopropyl) fluorenes of 9,9-dioctyl fluorene-9,9-]
(PFN), spin coating speed is 5000r/min, spin-coating time 40s, poly-(3,4-rthylene dioxythiophene)-
Polystyrolsulfon acid (PEDOT:PSS) consumption is 80 μ L；The warm table of 150 DEG C it is placed on after spin coating
Upper annealing 10min；Or speed with 0.2nm/s is deposited with on indium tin oxide (ITO) layer in step 2
One layer of molybdenum oxide (MoO thick for 10nm3)。
Step 4: using poly-(3-hexyl thiophene) (P3HT) or base polymer (PBDT-TS1) as
Electron donor material, by fullerene derivate (PCBM, ICBA) or non-fullerene acceptor (ITIC)
As electron acceptor material；Described electron donor material and described electron acceptor material are according to weight ratio 100:1
It is dissolved in o-dichlorohenzene (o-DCB), is prepared as mixed solution, uniform for described mixed solution drop coating is existed
In step 3 on poly-(3,4-rthylene dioxythiophene)-polystyrolsulfon acid (PEDOT:PSS) layer, then add
Heat makes o-dichlorohenzene (o-DCB) quickly volatilize, and leaves being total to of electron donor material and electron acceptor material
Mixed thin film, wherein, described heating-up temperature is 80-120 DEG C, and blend film thickness is 2.0-5.0 μm.
Step 5: the sample obtained in step 4 is put in the vacuum chamber being placed with aluminium wire, described vacuum chamber
Vacuum is less than 1 × 10-4Pa；Heating aluminium wire makes it evaporate, and evaporation rate is 0.2nm/s, evaporates thickness
For 100nm, obtain the photomultiplier transit type organic photodetector with spectral selection.
Embodiment one
The photomultiplier transit type organic photodetector with spectral selection includes: transparent substrates 1, transparency electrode
2, transparency electrode decorative layer 3, active layer 4 and metal electrode 5.
Described transparency electrode 2 is transparent ITO electrode；Described transparency electrode decorative layer 3 is poly-(3,4-second
Alkene dioxy thiophene)-polystyrolsulfon acid (PEDOT:PSS)；Described active layer 4 is poly-(3-hexyl thiophene)
The blend film of P3HT and fullerene derivate PCBM, wherein, poly-(3-hexyl thiophene) P3HT and
The mass ratio of fullerene derivate PCBM is 100:1, and active layer 4 thickness is 2.0 μm；Described metal
Electrode 5 is aluminum.
Above-mentioned organic photodetector preparation method comprises the following steps:
Step 1: be 4cm by area2Glass is as transparent substrates.
Step 2: indium tin oxide (ITO) is plated in described transparent substrates, is soaked in the most respectively
In ionized water, dehydrated alcohol, clean with ultrasonic washing instrument；Dry up with nitrogen after cleaning up, will be dried
Substrate surface process 1min with plasma cleaning instrument, improve the cleannes of substrate surface and ITO surface
Work function.
Step 3: be disposed in step 2 is coated with spin coating PEDOT:PSS in the glass substrate of ITO,
Its spin coating speed is 5000r/min, capacity 80 μ L, spin-coating time 40s, is then placed on the heating of 150 DEG C
Anneal on platform 10min, removes the moisture content in PEDOT:PSS thin film.
Step 4: by poly-(3-hexyl thiophene) P3HT and fullerene derivate PCBM according to weight ratio 100:1
Being dissolved in o-dichlorohenzene (o-DCB), be prepared as 40mg/ml mixed solution, the mixing taking 50 μ L is molten
Substrate, on PEDOT:PSS/ITO substrate, is then transferred on the heating platform of 80 DEG C by the uniform drop coating of liquid
Make the solvent in thin film quickly volatilize, be prepared as the mixed film of 2.0 μm.
Step 5: put into by sample in vacuum chamber, to vacuum chamber evacuation, makes vacuum reach 4 × 10-5Pa。
Heating aluminium wire, makes aluminium wire evaporate, and evaporation rate is 0.2nm/s, and evaporation thickness is 100nm, is had
The photomultiplier transit type organic photodetector of spectral selection.
As shown in Figure 5 and Figure 6, the 2.0 μm active mixed film organic photodetector made is inclined at-20V
Pressure, external quantum efficiency maximum at 645nm reaches 610%, and detectivity is 1.71 × 1014Fine jade
This.
The electron donor material poly-(3-hexyl thiophene) (P3HT) of active layer 4 and electron acceptor material fowler
The blend film that ene derivative (PCBM) is mixed with by 100:1 weight ratio exists by reducing electron acceptor
Mass ratio in device obtains photomultiplier transit effect, i.e. this organic photodetector and has the outer amount more than 100%
Sub-efficiency, reduces the preparation cost of device simultaneously；By regulating and controlling this blend film i.e. thickness of active layer,
Described organic photodetector is made to have spectral selection；Concrete, being set with active layer blend film thickness is
2.0 μm make this organic photodetector full width at half maximum (FWHM) be less than 30nm, thus have spectrum choosing
Selecting property.
Embodiment two
Active layer 4 blend film thickness in embodiment one is respectively set to 2.5 μm and 5.0 μm, as
Shown in Fig. 3, the organic photodetector external quantum efficiency in the case of two kinds is all higher than 100%, full width at half maximum
(FWHM) it is respectively less than 30nm, and then is respectively provided with spectral selection.
Obviously, the above embodiment of the present invention is only for clearly demonstrating example of the present invention, and
It is not the restriction to embodiments of the present invention, for those of ordinary skill in the field,
Can also make other changes in different forms on the basis of described above, the system of such as active layer
Standby can have multiple choices, and electron donor material can be poly-(3-hexyl thiophene) (P3HT) and birds of the same feather flock together
In compound (PBDT-TS1) any one, electron acceptor material can be fullerene derivate (PCBM,
ICBA) any one, cannot give all of embodiment here or in non-fullerene acceptor (ITIC)
With exhaustive, every belong to obvious change that technical scheme extended out or variation is still located
Row in protection scope of the present invention.
Claims (10)
1. there is the photomultiplier transit type organic photodetector of spectral selection, including:
Transparent substrates (1)；
The transparency electrode (2) being arranged in this transparent substrates (1)；
The transparency electrode decorative layer (3) being arranged in this transparency electrode (2)；
It is arranged on the active layer (4) on this transparency electrode decorative layer (3)；And
The metal electrode (5) being arranged on this active layer (4)；
It is characterized in that, described active layer is the blend film of electron donor material and electron acceptor material,
Described film thickness is 2.0-5.0 μm；Electron donor and the weight ratio of electron acceptor material in described active layer
For 100:1；Wherein, described electron donor material is poly-(3-hexyl thiophene) (P3HT) or birds of the same feather flock together
Compound (PBDT-TS1), described electron acceptor material be fullerene derivate (PCBM, ICBA) or
Non-fullerene acceptor (ITIC).
Organic photodetector the most according to claim 1, it is characterised in that described transparent substrates is
Glass.
Organic photodetector the most according to claim 1, it is characterised in that described transparency electrode is
Indium tin oxide (ITO).
Organic photodetector the most according to claim 1, it is characterised in that described transparency electrode is repaiied
Decorations layer is by poly-(3,4-ethene dioxythiophene)-polystyrolsulfon acid (PEDOT:PSS), molybdenum oxide (MoO3)
Or [double (N, the N-DimethylAminopropyl) fluorenes of 9,9-dioctyl fluorene-9,9-] (PFN) is constituted.
Organic photodetector the most according to claim 1, it is characterised in that described metal electrode is
Aluminum or silver, thickness is 100nm.
Organic photodetector the most according to claim 1, it is characterised in that being total to of described active layer
Mixed film thickness is 2.0 μm.
7. there is the preparation method of the photomultiplier transit type organic photodetector of spectral selection, it is characterised in that
Said method comprising the steps of:
Step 1: using glass as transparent substrates；
Step 2: prepare transparency electrode in described transparent substrates；
Step 3: prepare transparency electrode decorative layer in described transparency electrode；
Step 4: prepare active layer on described transparency electrode decorative layer, including: by poly-(3-hexyl thiophene)
Or base polymer (PBDT-TS1) is as electron donor material, by fullerene derivate (P3HT)
(PCBM, ICBA) or non-fullerene acceptor (ITIC) are as electron acceptor material；Described electronics is given
Body material and described electron acceptor material are dissolved in o-dichlorohenzene (o-DCB) according to weight ratio 100:1, system
Standby one-tenth mixed solution, by uniform for described mixed solution drop coating on the transparency electrode decorative layer of preparation, then adds
Heat makes o-dichlorohenzene (o-DCB) quickly volatilize, and leaving thickness is 2.0-5.0 μm electron donor material and electricity
The blend film of sub-acceptor material is as active layer, and wherein, described heating-up temperature is 80-120 DEG C；
Step 5: prepare metal electrode on described active layer.
Method the most according to claim 7, it is characterised in that step 2 farther includes: by indium
Tin-oxide (ITO) is plated in described transparent substrates, is soaked in deionized water, dehydrated alcohol the most respectively
In, then clean with ultrasonic washing instrument；Dry up with nitrogen after cleaning up, then with at plasma cleaning instrument
Reason 1min.
Method the most according to claim 7, it is characterised in that step 3 farther includes: in step
Spin coating poly-(3,4-ethene dioxythiophene)-polystyrolsulfon acid in the transparency electrode of preparation in rapid 2
(PEDOT:PSS) or [9,9-dioctyl fluorene-9,9-double (N, N-DimethylAminopropyl) fluorenes] (PFN), wherein
Spin coating speed is 5000r/min, spin-coating time 40s, poly-(3,4-rthylene dioxythiophene)-polystyrene sulphur
Acid (PEDOT:PSS) consumption is 80 μ L；Annealing 10min it is placed on the warm table of 150 DEG C after spin coating；
Or it is deposited with the thick molybdenum oxide of one layer of 10nm with the speed of 0.2nm/s in the transparency electrode prepared in step 2
(MoO3)。
Method the most according to claim 7, it is characterised in that step 5 farther includes: will
The sample obtained in step 4 is put in the vacuum chamber being placed with aluminium wire, and described vacuum degree in vacuum chamber is less than 1
×10-4Pa；Heating aluminium wire makes it evaporate, and evaporation rate is 0.2nm/s, and evaporation thickness is 100nm.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107591484A (en) * | 2017-09-01 | 2018-01-16 | 北京交通大学 | It is a kind of to have arrowband and the multiplication type organic photodetector of broadband light detectivity concurrently |
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| JP2023043171A (en) * | 2021-09-15 | 2023-03-28 | レイナジー テック インコーポレイション | Structure of photodiode |
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| CN107591484B (en) * | 2017-09-01 | 2019-09-24 | 北京交通大学 | A kind of multiplication type organic photodetector having both narrowband and broadband light detectivity |
| CN107591484A (en) * | 2017-09-01 | 2018-01-16 | 北京交通大学 | It is a kind of to have arrowband and the multiplication type organic photodetector of broadband light detectivity concurrently |
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| GB2572573A (en) * | 2018-04-03 | 2019-10-09 | Sumitomo Chemical Co | Organic photodetector |
| GB2572659A (en) * | 2018-04-03 | 2019-10-09 | Sumitomo Chemical Co | Organic photodetector |
| CN109148691A (en) * | 2018-09-06 | 2019-01-04 | 西安理工大学 | A kind of low-voltage multiplication type colour organic photodetector and preparation method thereof |
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| CN110364626B (en) * | 2019-06-28 | 2020-12-01 | 北京交通大学 | Narrow-band photoelectric detector and preparation method thereof |
| CN111682110A (en) * | 2020-05-13 | 2020-09-18 | 华南理工大学 | Near infrared spectrum response polymer light detection device containing non-fullerene receptor |
| CN112366276A (en) * | 2020-10-20 | 2021-02-12 | 泰山学院 | Ultrahigh multiplication type organic photoelectric detector and preparation method thereof |
| CN112201753A (en) * | 2020-12-01 | 2021-01-08 | 江汉大学 | Organic electric storage device and preparation method thereof |
| JP2023043171A (en) * | 2021-09-15 | 2023-03-28 | レイナジー テック インコーポレイション | Structure of photodiode |
| JP7470752B2 (en) | 2021-09-15 | 2024-04-18 | レイナジー テック インコーポレイション | Photodiode structure that self-filters light of a specific wavelength |
| CN114284435A (en) * | 2021-12-14 | 2022-04-05 | 电子科技大学 | Low-dark-current organic multiplication type photoelectric detector and preparation method thereof |
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