CN112736199A - C8-BTBT single crystal film, preparation method thereof and organic field effect transistor based on C8-BTBT single crystal film - Google Patents
C8-BTBT single crystal film, preparation method thereof and organic field effect transistor based on C8-BTBT single crystal film Download PDFInfo
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- CN112736199A CN112736199A CN201911032433.4A CN201911032433A CN112736199A CN 112736199 A CN112736199 A CN 112736199A CN 201911032433 A CN201911032433 A CN 201911032433A CN 112736199 A CN112736199 A CN 112736199A
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- YWIGIVGUASXDPK-UHFFFAOYSA-N 2,7-dioctyl-[1]benzothiolo[3,2-b][1]benzothiole Chemical compound C12=CC=C(CCCCCCCC)C=C2SC2=C1SC1=CC(CCCCCCCC)=CC=C21 YWIGIVGUASXDPK-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 239000013078 crystal Substances 0.000 title claims abstract description 56
- 230000005669 field effect Effects 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 230000003647 oxidation Effects 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 33
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 22
- 239000004793 Polystyrene Substances 0.000 claims description 13
- 229920002223 polystyrene Polymers 0.000 claims description 13
- 239000001509 sodium citrate Substances 0.000 claims description 11
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 10
- 239000012498 ultrapure water Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000003792 electrolyte Substances 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 10
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 4
- 238000005191 phase separation Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000010008 shearing Methods 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229940126534 drug product Drugs 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000825 pharmaceutical preparation Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a C8-BTBT (carbon nitride-based) single crystal film and a preparation method thereof, and an organic field effect transistor based on the C8-BTBT single crystal film, wherein the preparation method comprises the following steps: thermally evaporating aluminum on the glass slide to form an aluminum layer, and carrying out an anodic oxidation method on the aluminum layer to form an aluminum oxide layer on the aluminum layer; heating the alumina layer to 40-60 ℃, arranging a scraper on the upper surface of the alumina layer, enabling the distance between the cutting edge at the bottom end of the scraper and the upper surface of the alumina layer to be 5-20 microns, dropwise adding an organic semiconductor solution between the scraper and the alumina layer, and moving the scraper or a glass slide at the speed of 0.01-0.4 mm/s to enable the alumina layer and the scraper to move relatively, so that the C8-BTBT single crystal film is obtained on the alumina layer through which the cutting edge passes. The C8-BTBT single crystal film obtained by the invention further improves the mobility of the organic field effect transistor and reduces the subthreshold swing of the device.
Description
Technical Field
The invention belongs to the technical field of organic field effect transistors, and particularly relates to a C8-BTBT single crystal film, a preparation method thereof and an organic field effect transistor based on the C8-BTBT single crystal film.
Background
Organic Field Effect Transistors (OFETs) play an important role in many new generation organic electronic devices, such as memories, biosensors, displays, drivers and Radio Frequency Identification (RFID). One of the major challenges in producing these devices is to reduce the operating power of portable or wearable electronic applications and make them compatible with battery power. In OFET applications, low operating power means that sufficient charge can accumulate at the semiconductor-dielectric interface to create a conducting channel under a small voltage bias at the gate. The subthreshold swing characterizes the speed at which the device switches from the off-state to the on-state, so the smaller the value, the better. The large sub-threshold swing also prevents the simultaneous reduction of threshold voltage when scaling down device dimensions. The theoretical limit of the subthreshold swing at room temperature is 60mV/dec, while the subthreshold swing of the field effect transistor is commonly 200 and 1000mV/dec at present, and almost rarely is reduced to be below 100 mV/dec.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a preparation method of a C8-BTBT single crystal film.
The invention also aims to provide the C8-BTBT single crystal film obtained by the preparation method, and an organic field effect transistor prepared from the C8-BTBT single crystal film has high performance and low subthreshold swing.
The invention also aims to provide an organic field effect transistor prepared from the C8-BTBT single crystal film.
The purpose of the invention is realized by the following technical scheme.
A preparation method of a C8-BTBT single crystal film comprises the following steps:
1) thermally evaporating aluminum on the glass slide to form an aluminum layer, and carrying out an anodic oxidation method on the aluminum layer to form an aluminum oxide layer on the aluminum layer;
in the step 1), the thickness of the aluminum layer is 100-150 nm.
In the step 1), a cathode in the anodic oxidation method is graphite, an anode is aluminum, and an electrolyte is a mixture of citric acid, sodium citrate and ultrapure water, wherein the ratio of the mass parts of citric acid to the mass parts of sodium citrate to the volume parts of ultrapure water is 150: 1500: 200.
in the step 1), the current of the anodic oxidation method is 5-10 mA, the voltage is 10-20V, and the time is 5-10 min.
2) Heating the aluminum oxide layer to 40-60 ℃, arranging a scraper on the upper surface of the aluminum oxide layer, enabling the distance between the cutting edge at the bottom end of the scraper and the upper surface of the aluminum oxide layer to be 5-20 microns, dropwise adding an organic semiconductor solution between the scraper and the aluminum oxide layer, moving the scraper or a glass slide at the speed of 0.01-0.4 mm/s to enable the aluminum oxide layer and the scraper to move relatively, and obtaining a C8-BTBT single crystal film on the aluminum oxide layer through which the cutting edge passes, wherein the organic semiconductor solution is a mixture of C8-BTBT, polystyrene and chlorobenzene, and the ratio of the mass fraction of C8-BTBT to the mass fraction of polystyrene to the volume fraction of chlorobenzene is 10: 10: 1.
in the step 2), the volume of the organic semiconductor solution is 5-10 microliters.
In the above technical solution, the unit of the mass part is mg, and the unit of the volume part is mL.
The C8-BTBT single crystal film obtained by the preparation method.
In the technical scheme, the thickness of the C8-BTBT single crystal film is 27-60 nm.
An organic field effect transistor prepared from the C8-BTBT single crystal film.
The application of the C8-BTBT single crystal film in reducing the subthreshold swing.
In the technical scheme, the sub-threshold swing of the organic field effect transistor prepared from the C8-BTBT single crystal film is averagely 63mV/dec and the minimum value is 61 mV/dec.
In the above technical solution, the organic field effectThe average mobility of the transistor was 6.7cm2V-1s-1Maximum 8cm2V-1s-1。
The invention has the following beneficial effects:
1. the vertical phase separation of the organic semiconductor solution further reduces the subthreshold swing of the organic field effect transistor, wherein in the shearing process of the organic semiconductor solution, the vertical phase separation of polystyrene and C8-BTBT occurs, and the polystyrene can fill the defects on the alumina layer, so that the defect state density of the organic field effect transistor is greatly reduced, the mobility of the organic field effect transistor is further improved, and the subthreshold swing of the device is reduced.
2. The preparation of the C8-BTBT single crystal film is carried out at room temperature, so that the influence of high temperature on the performance of an organic semiconductor is avoided.
3. The distance between the knife edge and the upper surface of the alumina layer is reduced, so that the shearing stress of molecules is greatly increased, and a large-area single crystal film is finally formed.
Drawings
FIG. 1 is a structural formula of C8-BTBT;
FIG. 2 is a photograph of a C8-BTBT single crystal film taken by a polarization microscope at 0 °;
FIG. 3 is a photograph of a C8-BTBT single crystal film taken by a polarizing microscope at 45 °;
FIG. 4 is a transfer characteristic curve of a field effect transistor constructed from a C8-BTBT single crystal film;
FIG. 5 is a graph showing the output characteristics of a field effect transistor constructed from a C8-BTBT single crystal film;
FIG. 6 is a plot of capacitance per unit area for alumina;
fig. 7 is a graph of the calculated subthreshold swing of the field effect transistor.
Detailed Description
The technical scheme of the invention is further explained by combining specific examples.
In the following examples, parts by mass are in mg and parts by volume are in mL.
The purity and purchase of the drug products in the following examples are as follows: C8-BTBT (purity is more than or equal to 99%), polystyrene, chlorobenzene (purity is more than or equal to 99%), citric acid and sodium citrate are purchased from Sigma-Aldrich company, and high-purity aluminum is purchased from Zhongnuo Xinjiang company.
The following examples refer to the following instruments and models: evaporation of aluminum and metal electrodes using the Angstrom Engineering Covap thermal evaporation System, transmission and output I-V curves of field effect transistors were measured in air using a Keithley 4200 SCS semiconductor parameter analyzer, and the digital source table 2400 is a photomicrograph taken with a Nikon Eclipse Ci-POL polarization microscope used during anodization
Example 1
A preparation method of a C8-BTBT single crystal film comprises the following steps:
1) and thermally evaporating aluminum on the glass slide to form an aluminum layer with the thickness of 100nm, and carrying out an anodic oxidation method on the aluminum layer to form an aluminum oxide layer on the aluminum layer, wherein the current of the anodic oxidation method is 8mA, the voltage is 15V, and the time is 5 min. In the anodic oxidation method, the cathode is graphite, the anode is aluminum, the electrolyte is a mixture of citric acid, sodium citrate and ultrapure water, and the ratio of the mass parts of the citric acid to the mass parts of the sodium citrate to the volume parts of the ultrapure water is 150: 1500: 200.
2) heating an aluminum oxide layer to 40 ℃, arranging a scraper on the upper surface of the aluminum oxide layer, enabling the distance between the blade at the bottom end of the scraper and the upper surface of the aluminum oxide layer to be 5 micrometers, dropwise adding 5ul of organic semiconductor solution between the scraper and the aluminum oxide layer, moving the scraper or a glass slide at the speed of 0.3mm/s to enable the aluminum oxide layer and the scraper to move relatively, and obtaining a C8-BTBT single crystal film on the aluminum oxide layer through which the blade passes, wherein the organic semiconductor solution is a mixture of C8-BTBT, polystyrene and chlorobenzene, and the ratio of the mass fraction of C8-BTBT, the mass fraction of polystyrene and the volume fraction of chlorobenzene is 10: 10: 1.
the thickness of the C8-BTBT single crystal film obtained by the preparation method of the embodiment is 27 nm. The thickness of the crystal can be controlled by different temperatures and speeds, the higher the temperature and the lower the speed, the thicker the film, and the thickness can be controlled in detail in examples 2 and 3.
FIG. 1 is a C8-BTBT molecular formula picture.
FIG. 2 is a photograph of a C8-BTBT single crystal film taken by a polarizing microscope at 0 ℃. FIG. 3 is a photograph of a C8-BTBT single crystal film taken by a polarizing microscope at 45 ℃. As can be seen from the polarization photographs in FIGS. 2 and 3, the total length of the film is about 10cm2In the range of (1), after the C8-BTBT single crystal film rotates by 45 degrees, the sample has overall brightness change, which shows that the single crystal exists in the whole area, most of the organic semiconductor single crystals exist in a micron level at present, but the invention can increase the crystal area to a centimeter level, which shows that the preparation method of the invention finally realizes the formation of the large-area single crystal film and lays a foundation for large-scale integrated circuits in the future.
The method for preparing the organic field effect transistor from the C8-BTBT single crystal film obtained in the embodiment comprises the following steps: pasting a mask plate on the C8-BTBT single crystal film, and thermally evaporating a gold electrode with the thickness of 50nm as a source electrode and a drain electrode, wherein the length-width ratio of the source electrode to the drain electrode is 5: 1, obtaining the organic field effect transistor.
Fig. 4 is a transfer characteristic curve of the field effect transistor constructed. Fig. 5 is an output characteristic curve of the field effect transistor constructed. FIGS. 4 and 5 show the performance test after the preparation of the organic field effect transistor, and the very low leakage current density (10) in the transfer output curve of FIG. 4-12) The method shows that the quality of the aluminum oxide is very good, the steep subthreshold slope and zero hysteresis indicate that the interface defect state density of the device is very low, and the mobility reaches 8cm through calculation2V-1s-1This is almost one of the highest values in organic field effect transistors.
FIG. 6 is a plot of capacitance per unit area for alumina, with a final measurement of 180nF/cm2And calculating the mobility.
Fig. 7 is a calculated sub-threshold swing of a field effect transistor. Where the gray portion is the theoretical limit of the subthreshold swing, at room temperature, of about 60mV/dec, it can be seen from fig. 7 that the subthreshold swing calculations for each point in the subthreshold region with a gate voltage of 1.45V to 1.6V have been found to be almost infinitely close to the theoretical limit, indicating that the quality of the single crystal and the interface after vertical phase separation are nearly perfect, which is one of the lowest values of the subthreshold swing so far.
After a plurality of tests, the average mobility of the field effect transistor obtained by the invention is 6.7cm2V-1s-1Maximum mobility of 8cm2V-1s-1The subthreshold swing averages 63mV/dec, with a minimum of 61 mV/dec.
Example 2
A preparation method of a C8-BTBT single crystal film comprises the following steps:
1) and thermally evaporating aluminum on the glass slide to form an aluminum layer with the thickness of 100nm, and carrying out an anodic oxidation method on the aluminum layer to form an aluminum oxide layer on the aluminum layer, wherein the current of the anodic oxidation method is 8mA, the voltage is 15V, and the time is 5 min. In the anodic oxidation method, the cathode is graphite, the anode is aluminum, the electrolyte is a mixture of citric acid, sodium citrate and ultrapure water, and the ratio of the mass parts of the citric acid to the mass parts of the sodium citrate to the volume parts of the ultrapure water is 150: 1500: 200.
2) heating an aluminum oxide layer to 50 ℃, arranging a scraper on the upper surface of the aluminum oxide layer, enabling the distance between the blade at the bottom end of the scraper and the upper surface of the aluminum oxide layer to be 5 micrometers, dropwise adding 5ul of organic semiconductor solution between the scraper and the aluminum oxide layer, moving the scraper or a glass slide at the speed of 0.3mm/s to enable the aluminum oxide layer and the scraper to move relatively, and obtaining a C8-BTBT single crystal film on the aluminum oxide layer through which the blade passes, wherein the organic semiconductor solution is a mixture of C8-BTBT, polystyrene and chlorobenzene, and the ratio of the mass fraction of C8-BTBT, the mass fraction of polystyrene and the volume fraction of chlorobenzene is 10: 10: 1.
the thickness of the C8-BTBT single crystal film obtained by the preparation method of the embodiment is 38 nm.
Example 3
A preparation method of a C8-BTBT single crystal film comprises the following steps:
1) and thermally evaporating aluminum on the glass slide to form an aluminum layer with the thickness of 100nm, and carrying out an anodic oxidation method on the aluminum layer to form an aluminum oxide layer on the aluminum layer, wherein the current of the anodic oxidation method is 8mA, the voltage is 15V, and the time is 5 min. In the anodic oxidation method, the cathode is graphite, the anode is aluminum, the electrolyte is a mixture of citric acid, sodium citrate and ultrapure water, and the ratio of the mass parts of the citric acid to the mass parts of the sodium citrate to the volume parts of the ultrapure water is 150: 1500: 200.
2) heating an aluminum oxide layer to 60 ℃, arranging a scraper on the upper surface of the aluminum oxide layer, enabling the distance between the blade at the bottom end of the scraper and the upper surface of the aluminum oxide layer to be 5 micrometers, dropwise adding 5ul of organic semiconductor solution between the scraper and the aluminum oxide layer, moving the scraper or a glass slide at the speed of 0.3mm/s to enable the aluminum oxide layer and the scraper to move relatively, and obtaining a C8-BTBT single crystal film on the aluminum oxide layer through which the blade passes, wherein the organic semiconductor solution is a mixture of C8-BTBT, polystyrene and chlorobenzene, and the ratio of the mass fraction of C8-BTBT, the mass fraction of polystyrene and the volume fraction of chlorobenzene is 10: 10: 1.
the thickness of the C8-BTBT single crystal film obtained by the preparation method of the embodiment is 60 nm.
The C8-BTBT single crystal films obtained in examples 2 and 3 were prepared into organic field effect transistors, which were capable of obtaining mobility and subthreshold swing consistent with example 1.
The invention has been described in an illustrative manner, and it is to be understood that any simple variations, modifications or other equivalent changes which can be made by one skilled in the art without departing from the spirit of the invention fall within the scope of the invention.
Claims (10)
1. A preparation method of a C8-BTBT single crystal film is characterized by comprising the following steps:
1) thermally evaporating aluminum on the glass slide to form an aluminum layer, and carrying out an anodic oxidation method on the aluminum layer to form an aluminum oxide layer on the aluminum layer;
2) heating the aluminum oxide layer to 40-60 ℃, arranging a scraper on the upper surface of the aluminum oxide layer, enabling the distance between the cutting edge at the bottom end of the scraper and the upper surface of the aluminum oxide layer to be 5-20 microns, dropwise adding an organic semiconductor solution between the scraper and the aluminum oxide layer, moving the scraper or a glass slide at the speed of 0.01-0.4 mm/s to enable the aluminum oxide layer and the scraper to move relatively, and obtaining a C8-BTBT single crystal film on the aluminum oxide layer through which the cutting edge passes, wherein the organic semiconductor solution is a mixture of C8-BTBT, polystyrene and chlorobenzene, and the ratio of the mass fraction of C8-BTBT to the mass fraction of polystyrene to the volume fraction of chlorobenzene is 10: 10: 1.
2. the method according to claim 1, wherein in the step 1), the thickness of the aluminum layer is 100 to 150nm, the unit of the mass part is mg, and the unit of the volume part is mL.
3. The preparation method according to claim 2, wherein in the step 1), the cathode in the anodic oxidation method is graphite, the anode is aluminum, and the electrolyte is a mixture of citric acid, sodium citrate and ultrapure water, wherein the ratio of the parts by mass of citric acid, the parts by mass of sodium citrate and the parts by volume of ultrapure water is 150: 1500: 200 of a carrier; the anodic oxidation method is characterized in that the current is 5-10 mA, the voltage is 10-20V, and the time is 5-10 min.
4. The production method according to claim 3, wherein in the step 2), the volume of the organic semiconductor solution to be dropped is 5 to 10. mu.l.
5. The C8-BTBT single crystal film obtained by the method according to any one of claims 1 to 4.
6. The C8-BTBT single crystal film of claim 5, wherein the thickness of the C8-BTBT single crystal film is 27-60 nm.
7. An organic field effect transistor made of the C8-BTBT single crystal film of claim 5 or 6.
8. The use of the C8-BTBT single crystal film of claim 5 in reducing subthreshold swing.
9. The use according to claim 8, wherein the C8-BTBT single crystal film is prepared to have an average subthreshold swing of 63mV/dec and a minimum of 61mV/dec for an organic field effect transistor.
10. Use according to claim 8 or 9, wherein the average mobility of the organic field effect transistor is 6.7cm2 V-1s-1Maximum 8cm2 V-1s-1。
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| CN116546824A (en) * | 2022-05-07 | 2023-08-04 | 浙江大学 | Organic field effect transistor and preparation method thereof |
| CN118159106A (en) * | 2024-03-13 | 2024-06-07 | 天津大学 | Sense-register integrated transistor device based on inorganic/organic heterogeneous dielectric layer and preparation method thereof |
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| 董升: "面向大面积有机太阳电池的高效厚膜材料及器件研究", 《中国博士学位论文全文数据库 工程科技II辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116546824A (en) * | 2022-05-07 | 2023-08-04 | 浙江大学 | Organic field effect transistor and preparation method thereof |
| CN118159106A (en) * | 2024-03-13 | 2024-06-07 | 天津大学 | Sense-register integrated transistor device based on inorganic/organic heterogeneous dielectric layer and preparation method thereof |
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