CN106876585A - A kind of method that organic field effect tube mobility is improved by short annealing - Google Patents
A kind of method that organic field effect tube mobility is improved by short annealing Download PDFInfo
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- CN106876585A CN106876585A CN201710043631.5A CN201710043631A CN106876585A CN 106876585 A CN106876585 A CN 106876585A CN 201710043631 A CN201710043631 A CN 201710043631A CN 106876585 A CN106876585 A CN 106876585A
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- 238000009413 insulation Methods 0.000 claims abstract description 22
- 238000012546 transfer Methods 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 230000037230 mobility Effects 0.000 claims description 34
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
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- 238000012986 modification Methods 0.000 claims description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910000906 Bronze Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010974 bronze Substances 0.000 claims description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- -1 aphthacene Chemical compound 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 239000000284 extract Substances 0.000 claims description 2
- 239000005357 flat glass Substances 0.000 claims description 2
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000010129 solution processing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 238000007738 vacuum evaporation Methods 0.000 description 9
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- 238000004528 spin coating Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
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- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 229920002521 macromolecule Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- JQQSUOJIMKJQHS-UHFFFAOYSA-N pentaphene Chemical compound C1=CC=C2C=C3C4=CC5=CC=CC=C5C=C4C=CC3=CC2=C1 JQQSUOJIMKJQHS-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of method that organic field effect tube mobility is improved by short annealing, including step in detail below：The gate insulation substrate with polymer-modified layer is prepared first；Short annealing operation is carried out to the gate insulation substrate；Organic semiconductor layer and source-drain electrode are deposited with polymer-modified layer, organic field effect tube is prepared；The transfer characteristic curve of the transistor is tested, corresponding mobility is extracted, and calculate average mobility.Present invention further propose that the organic field effect tube that a kind of basis is prepared above by the method that short annealing improves organic field effect tube mobility.Present invention also offers the preparation method of above-mentioned organic field effect tube.The present invention effectively improves the mobility of organic field effect tube by simple solution processing technology, is easy to promote, applies.
Description
Technical field
The invention belongs to semicon industry organic field effect tube technical field, and in particular to one kind improves organic field effect
Answer the implementation method of transistor mobility.
Background technology
Organic field effect tube is originated extensively as the basic component in electronic circuit because its semiconductor layer material has
It is general, soft, the characteristics of processing technology is simple, and can be applied to large area typography, be especially suitable for flexible electronic of future generation and produce
The development of industry.In recent years, organic field effect tube has achieved quickly development, wherein the single-crystal field effect based on rubrene
Transistor mobility has reached 15cm2/ Vs, has been over amorphous silicon.
In organic field effect tube, conducting channel is located at the sub- nanometer chi near gate insulation layer in organic semiconductor layer
In the range of degree.Because the pattern of gate electrode insulation surface, roughness and surface can these factors, greatly affect and organic partly lead
The quality of body conducting channel.Generally, roughness it is small (<1nm), the gate insulator layer interface that surface can match is conducive to organic semiconductor
Orderly accumulation and high-crystallinity, and then improve mobility, accelerate transistor switching speed.At present, can be by gate insulation
The mode that layer carries out surface modification can be matched to reduce surface roughness, increase surface.Modification layer material is including polymer and certainly
Assembling monolayer material, having studied the modification mode of report includes that k/ low k dielectrics high match (IEEE Electron
Device Lett.2015,36,950-2), polymer molecular weight regulation and control (Adv.Mater.2011,23,1009-14), induction is hung down
It is straight to be separated (Org.Electron.2015,21,111-6) etc..For polymer-modified layer material, itself has macromolecule
Distinctive supermolecular mechanism power, self assembly and topological structure equimolecular chemical feature.But so far, become from macromolecule conformation
Change angle is very few to the research that polymer-modified layer surface carries out interfacial property regulation and control.
The content of the invention
To solve by adjusting polymer-modified layer molecular conformation and then regulating and controlling interfacial property, raising organic effect crystal
The problem of pipe transfer rate, the present invention proposes a kind of method that short annealing is performed to polymer-modified layer.It is in current material
On the basis of do not increase technique, technical difficulty, there is provided the surface that a kind of means of simple operations improve polymer-modified layer can be uniform
Property can be matched the surface that strengthens between organic semiconductor layer and polymer-modified layer, strengthen the knot of organic semiconductor layer film
Crystalline substance, improves the mobility of transistor, with extremely strong universality.
In order to solve the above technical problems, technical scheme proposed by the present invention is one kind improves organic field effect by short annealing
The method for answering transistor mobility, including step in detail below：
(1) the gate insulation substrate with polymer-modified layer, is prepared；
(2) short annealing operation, is carried out to the gate insulation substrate；
(3) organic semiconductor layer and source-drain electrode, are deposited with polymer-modified layer, organic field effect tube is prepared；
(4) transfer characteristic curve of the transistor, is tested, corresponding mobility is extracted, and calculate average mobility.
Further, above-mentioned polymer-modified layer choosing contains the macromolecular material of benzene radicals from side chain.
Above-mentioned gate insulation substrate includes substrate, gate electrode and gate insulation layer.
In above-mentioned steps 2, the short annealing operation is carried out in nitrogen glove box, and the substrate after modification is placed in thermal station
After upper 6~12h, quickly remove and be placed in room temperature, the glass transition temperature of the temperature less than polymeric material of thermal station.
In step 4, described mobility extracts from the saturation region of transfer characteristic curve.
The average mobility of above-mentioned mobility is the average value of several unit component mobilities.If preferably, described
Dry is at least 3.
The present invention also proposes a kind of method that basis improves organic field effect tube mobility above by short annealing
The organic field effect tube of preparation, described organic field effect tube, from bottom to up including substrate, gate electrode, gate insulation
Layer, polymer-modified layer, organic semiconductor layer, source-drain electrode；
It is highly doped silicon chip, sheet glass or plastics PET that the material of the substrate is selected from；
The material that the gate electrode is used is selected from highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum；
The material that the gate insulation layer is used is selected from silica, aluminum oxide, zirconium oxide, tantalum pentoxide, and the grid are exhausted
The film thickness of edge layer is 50~300nm；
The film thickness of the polymer-modified layer is 10~30nm；
The material that the organic semiconductor layer is used is selected from pentacene, aphthacene, titan bronze, fluorination titan bronze or red glimmering
Alkene；
The organic semiconductor layer uses thermal vacuum vapour deposition method film forming, and its thickness is 40~60nm；
The source-drain electrode materials are selected from has low-resistance metal material gold, silver, aluminium, copper and alloy material, metal oxygen
Compound material；
The preparation method of the source-drain electrode is magnetron sputtering method, ink-jet printing process or vacuum vapour deposition, and its thickness is 60
~100nm.
Present invention also offers the preparation method of above-mentioned organic field effect tube, following steps are specifically included：
(1) polymer solution is configured, its concentration is 2~5mg/ml；
(2) suitable backing material is selected as substrate, and gate electrode and gate insulation layer, gate insulation layer are formed on substrate
The thickness of film is 50~300nm, is dried after cleaning up substrate；
(3) by drying after clean substrate using UV ozone process 3~5min；
(4) solution that spin-coating step (1) has been configured above the substrate that will be prepared in step (3), control rotating speed makes its film
Thickness is 10~30nm, by spin coating good substrate short annealing in glove box；
(5) vacuum evaporation organic semiconductor layer and source-drain electrode above the substrate for preparing in the step (4).
Preferably, the short annealing described in step (4) is carried out in nitrogen glove box, and the substrate after spin coating is placed in thermal station
After upper 6~12h, quickly remove and be placed in room temperature；Glass transition temperature of the temperature of the thermal station less than polymeric material
(Tg)。
Preferably, the organic semiconductor layer material of step (5) described vacuum evaporation is pentacene, and evaporation rate is
Vacuum degree control is 6 × 10-5Pa~6 × 10-4Pa, thickness is controlled in 40~60nm using crystal oscillator；The vacuum evaporation source and drain electricity
Extremely copper, evaporation rateControl thickness is in 60~100nm.
Preferably, the material of the source-drain electrode is gold or copper.
The present invention has the advantages that：
1st, organic field effect tube prepared by the present invention can be by controlling polymer-modified annealing speed and temperature
To control the crystallization degree of organic semiconductor layer, the raising of organic field effect tube mobility is capable of achieving.
2nd, the present invention can be prepared compared with other methods on the premise of extra channel doping technique is not needed
The modification layer film that surface can optimize.
3rd, the present invention can be according to the specific polymeric material flexible modulation annealing temperature and speed selected, it is easy to prepare controllable
High mobility organic field effect tube.
Brief description of the drawings
The organic field effect tube structural representation that Fig. 1 is used by present example.
Fig. 2 is the organic semiconductor crystallization enhancing schematic diagram that the Rapid Annealing Method provided according to the embodiment of the present invention 1 is induced.
Fig. 3 is the according to embodiments of the present invention 1 short annealing whether transfer characteristic curve contrast schematic diagram for providing.
Fig. 4 is the according to embodiments of the present invention 2 short annealing whether transfer characteristic curve contrast schematic diagrams for providing.
Specific embodiment
It is described further to of the invention in conjunction with accompanying drawing.It is mentioned that accompanying drawing be suitable only for following embodiments,
For those of ordinary skill in the art, other accompanying drawings can also be obtained according to the method mentioned in the present invention.But, this
The protection domain of invention is not limited to following embodiments.
Embodiment 1
A kind of method that short annealing improves organic field effect tube mobility, including：
(1) organic field effect tube with polymer-modified layer, is prepared, its structural representation is as shown in Figure 1；
Specifically include following steps：During actual preparation, laboratory room temperature is maintained at 25 DEG C or so, and indoor humidity is stored in
Less than 30%.
A () configures polymer poly (4-Vinyl phenol) (PVP, molecular weight Mw=11kg/mol, Tg=130 DEG C) solution,
Solution, solubility 3mg/ml are configured to using PVP ethyl acetate as solvent；
B there is the heavily doped silicon of 300nm silica on () selection surface as substrate and gate insulation layer, using acetone, ethanol,
Deionized water is cleaned by ultrasonic 10 minutes with 100KHz respectively, is dried in 120 DEG C of vacuum drying oven thereafter；
C be put into the substrate of drying in step (b) in UV ozone and process 3min by ()；
The solution configured in d substrate surface spin-coating step (a) that () is handled well in step (c), film thickness is
20nm；
(2) film prepared by step (1) is placed in 70 DEG C of thermal station and is annealed, removed immediately after 12h and be placed in cooling in room temperature
It is standby；
(3) vacuum evaporation organic semiconductor layer and source-drain electrode on the thin polymer film after step (2) short annealing.Institute
The vacuum evaporation semi-conducting material stated is pentacene, and evaporation rate isVacuum degree control is 5 × 10-4Below pa, control
Evaporated film thickness is 50nm.The semiconductor layer XRD diffraction contrast schematic diagram of preparation is as shown in Fig. 2 under short annealing induction simultaneously
The crystal property of pentaphene has obtained significantly being lifted；The vacuum evaporation source-drain electrode is copper, evaporation rateControl is thick
Degree is in 100nm.
(4) after the completion of, prepared by device, its electric property is characterized by Agilent B1500 semiconductor analysis instrument, at data
The transfer curve that reason is depicted as is as shown in Figure 3.Compared with the cold annealing way of stove, organic effect prepared by Rapid Annealing Method is brilliant
Body pipe average mobility can be from 0.28cm2/ Vs, brings up to 0.59cm2/ Vs, on-off ratio is up to 105。
Embodiment 2
A kind of method that short annealing improves organic field effect tube mobility, including：
(1) organic field effect tube with polymer-modified layer, is prepared, its structural representation is as shown in Figure 1；
Specifically include following steps：During actual preparation, laboratory room temperature is maintained at 25 DEG C or so, and indoor humidity is stored in
Less than 30%.
(a) configuration polymers polystyrene (PS, molecular weight Mw=250kg/mol, Tg=100 DEG C) solution, by PS first
Benzene is configured to solution, solubility 3mg/ml as solvent；
B there is the heavily doped silicon of 300nm silica on () selection surface as substrate and gate insulation layer, using acetone, ethanol,
Deionized water is cleaned by ultrasonic 10 minutes with 100KHz respectively, is dried in 120 DEG C of vacuum drying oven thereafter；
C be put into the substrate of drying in step (b) in UV ozone and process 3min by ()；
The solution configured in d substrate surface spin-coating step (a) that () is handled well in step (c), film thickness is
20nm；
(2) film prepared by step (1) is placed in 70 DEG C of thermal station and is annealed, removed immediately after 12h and be placed in cooling in room temperature
It is standby；
(3) vacuum evaporation organic semiconductor layer and source-drain electrode on the thin polymer film after step (2) short annealing.Institute
The vacuum evaporation semi-conducting material stated is pentacene, and evaporation rate isVacuum degree control is 5 × 10-4Below pa, control
Evaporated film thickness is 50nm；The vacuum evaporation source-drain electrode is copper, evaporation rateControl thickness is in 100nm.
(4) after the completion of, prepared by device, its electric property is characterized by Agilent B1500 semiconductor analysis instrument, at data
The transfer curve that reason is depicted as is as shown in figure 4, compared with the cold annealing way of stove, organic effect prepared by Rapid Annealing Method is brilliant
The average mobility of body pipe can be from 0.59cm2/ Vs, brings up to 0.80cm2/ Vs, on-off ratio is up to 105。
All test results show that a kind of short annealing involved in the present invention improves organic field effect tube mobility
Method, it is simple to operate, be easy to promote, it is adaptable to side chain contains the organic field effect tube of the polymer-modified layer of phenyl ring.
The present invention is not limited to the concrete technical scheme described in above-described embodiment, the technical side that all use equivalents are formed
Case belongs to protection scope of the present invention.
Claims (8)
1. it is a kind of by short annealing improve organic field effect tube mobility method, it is characterised in that including following tool
Body step：
(1) the gate insulation substrate with polymer-modified layer, is prepared；
(2) short annealing operation, is carried out to the gate insulation substrate；
(3) organic semiconductor layer and source-drain electrode, are deposited with polymer-modified layer, organic field effect tube is prepared；
(4) transfer characteristic curve of the transistor, is tested, corresponding mobility is extracted, and calculate average mobility.
2. it is according to claim 1 by short annealing improve organic field effect tube mobility method, its feature
It is：The polymer-modified layer choosing contains the macromolecular material of benzene radicals from side chain.
3. it is according to claim 1 by short annealing improve organic field effect tube mobility method, its feature
It is：The gate insulation substrate includes substrate, gate electrode and gate insulation layer.
4. the method for being improved organic field effect tube mobility by short annealing according to claim 1, its feature is existed
In：The operation of short annealing described in step 2 is carried out in nitrogen glove box, and the substrate after modification is placed in 6~12h in thermal station
Afterwards, quickly remove and be placed in room temperature, the glass transition temperature of the temperature less than polymeric material of thermal station.
5. it is according to claim 1 by short annealing improve organic field effect tube mobility method, its feature
It is：Mobility described in step 4 extracts from the saturation region of transfer characteristic curve.
6. it is according to claim 5 by short annealing improve organic field effect tube mobility method, its feature
The average mobility for being the mobility is the average value of several unit component mobilities.
7. it is according to claim 6 by short annealing improve organic field effect tube mobility method, its feature
It is that described several are at least 3.
8. prepared by a kind of method for improving organic field effect tube mobility by short annealing according to claim 1
Organic field effect tube, it is characterised in that：Described organic field effect tube, from bottom to up including substrate, gate electrode,
Gate insulation layer, polymer-modified layer, organic semiconductor layer, source-drain electrode；
It is highly doped silicon chip, sheet glass or plastics PET that the material of the substrate is selected from；
The material that the gate electrode is used is selected from highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum；
The material that the gate insulation layer is used is selected from silica, aluminum oxide, zirconium oxide, tantalum pentoxide, the gate insulation layer
Film thickness be 50~300nm；
The film thickness of the polymer-modified layer is 10~30nm；
The material that the organic semiconductor layer is used is selected from pentacene, aphthacene, titan bronze, fluorination titan bronze or rubrene；
The organic semiconductor layer uses thermal vacuum vapour deposition method film forming, and its thickness is 40~60nm；
The source-drain electrode materials are selected from has low-resistance metal material gold, silver, aluminium, copper and alloy material, metal oxide
Material；
The preparation method of the source-drain electrode be magnetron sputtering method, ink-jet printing process or vacuum vapour deposition, its thickness be 60~
100nm。
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539018A (en) * | 2018-01-24 | 2018-09-14 | 重庆大学 | A kind of OFET pipes driving and preparation method thereof based on pervasive insulating layer |
| CN109545966A (en) * | 2018-11-13 | 2019-03-29 | 中通服咨询设计研究院有限公司 | A kind of organic field effect tube floating gate type memory and preparation method thereof based on quantum dot |
| WO2021037274A1 (en) * | 2019-08-29 | 2021-03-04 | 浙江大学 | Organic single-crystal semiconductor structure, and fabrication method for same |
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| CN112736199A (en) * | 2019-10-28 | 2021-04-30 | 天津大学 | C8-BTBT single crystal film, preparation method thereof and organic field effect transistor based on C8-BTBT single crystal film |
| CN112736199B (en) * | 2019-10-28 | 2023-03-24 | 天津大学 | C8-BTBT (British Bittery-based) single crystal film, preparation method thereof and organic field effect transistor based on C8-BTBT single crystal film |
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