CN104316571B - A kind of preparation method of carbon nanotube heterojunction organic gas sensor - Google Patents
A kind of preparation method of carbon nanotube heterojunction organic gas sensor Download PDFInfo
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- CN104316571B CN104316571B CN201410624791.5A CN201410624791A CN104316571B CN 104316571 B CN104316571 B CN 104316571B CN 201410624791 A CN201410624791 A CN 201410624791A CN 104316571 B CN104316571 B CN 104316571B
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Abstract
The invention discloses a kind of preparation method of carbon nanotube heterojunction organic gas sensor.The preparation method of the carbon nanotube heterojunction organic gas sensor, including dielectric layer, inducing layer, semiconductor layer, hetero junction layer, organic gas-sensitive layer.Using CNT as organic gas-sensitive layer, organic gas-sensitive is laminated to be connected with hetero-junctions, is simultaneously connected with source electrode, drain electrode.High vapor sensitivity particularly is realized with CNT organic gas-sensitive layer, carrier transport is improved using organic heterojunction.Fast response time, sensitivity are high at normal temperatures is operated for the organic gas sensor of organic carbon nanotube heterojunction, and are prepared using vacuum evaporation and solution technique, and technique is simple, cost is low.
Description
Technical field
The present invention relates to a kind of gas sensor, especially a kind of preparation of carbon nanotube heterojunction organic gas sensor
Method.
Background technology
At present, the species of gas sensor is various, common are solid thermal conduction formula sensor, fixed electric potential electroanalysis formula sensing
Device, gas chromatography sensor.But the correlative study with OTFT gas sensors is concentrated mainly on the conjunction of organic semiconductor thin-film
Into electric current noise abatement etc..But it is directed to research more than semiconductor layer and still lacks very much.Therefore more than semiconductor layer
Property will directly affect the performance of organic heterojunction transistor gas sensor.
The content of the invention
The present invention is in order to solve problems of the prior art, it is proposed that a kind of carbon nanotube heterojunction organic gas passes
The preparation method of sensor, it is sensitive low the purpose is to overcome existing for existing gas sensor, and response speed is slow the problems such as.Pass through
Change to semiconductor layer obtains with hypersensitivity energy, can rapid response speed a kind of organic gas of carbon nanotube heterojunction
Body sensor.
What the above mentioned problem of the present invention was realized in：Substrate is done with glass and flexible resin first；Then steamed thereon
One layer of inducing layer induced semiconductor layer stable crystalline is plated, then one layer of organic matter is deposited on the semiconductor layer, forms hetero-junctions；Finally
One layer of organic gas-sensitive material is deposited on hetero junction layer.When organic gas-sensitive layer contacts with gas, it can realize and produce carrier and phase
With higher gas sensing property when not contacted for organic gas-sensitive layer with gas, and organic charge carrier transport layer be then utilize have compared with
The organic heterojunction semiconductor of high mobility, realize the transport effect of carrier.
Organic gas-sensitive of the present invention is laminated to be connected with hetero-junctions, is simultaneously connected with source electrode, drain electrode.So very sufficiently by gas
The performance characterization of photosensitive layer comes out, therefore the present invention can effectively improve the performance of organic transistor gas sensor.
The invention has the characteristics that：
Do substrate from flexible resin, its feature is, light weight, it is non-breakable, be easy to large area production, be easy to transport
It is defeated.
The dielectric layer uses silicon nitride（Si3N4）, its feature is, hardness is high, dielectric constant is big, compact structure, heat conduction
Performance is good.
The inducing layer is α-four bithiophenes（α-4T）, its feature is, can preferably induce rubrene（Rubrene ）
Stable crystalline.
It is described heterogeneous to become rubrene（Rubrene ）With the hetero-junctions of fullerene composition, its feature is, rubrene
Monocrystalline mobility is up to 10cm2/ Vs, the hetero-junctions electronics ability to act of composition is strong, and mobility is higher.
Described organic gas-sensitive layer uses single-walled carbon nanotube（SCNT）Form, or using multi-walled carbon nanotube（MCNT）Structure
Into, its feature is with high sensitivity, fast response time, size is small, energy consumption is low and normal work at room temperature.
Brief description of the drawings
The common gas transducer production method of accompanying drawing 1.
The preparation method of the carbon nanotube heterojunction organic gas sensor of accompanying drawing 2.
Embodiment
A) using flexible resin as substrate, and grid, chemical vapour deposition technique making dielectric layer silicon nitride are sputtered successively
（Si3N4）, thickness is not less than 80nm, no more than 300nm, and is lithographically formed gate electrode pattern.
B) substrate with silicon nitride layer is cleaned with washing lotion.
C) with vacuum evaporation technique in dry silicon nitride（Si3N4）One layer of α-four bithiophene is prepared on dielectric layer（α-4T）
Inducing layer, thickness is not less than 5nm, no more than 30nm.
D) one layer of rubrene is prepared on inducing layer with vacuum evaporation technique（Rubrene ）Film, thickness are not less than 1nm,
No more than 20nm.
E) with vacuum evaporation technique in rubrene（Rubrene ）One layer of fullerene thin film layer is prepared on film, it is different to form
Matter knot, thickness is not less than 1.5nm, no more than 60nm.
F) one layer of carbon nano-tube gas-sensitive film layer is prepared on hetero-junction thin-film with solution spraying plating and spin coating technique, thickness is not
Less than 0.2nm, no more than 10nm.
G) metal that molybdenum high conductivity is prepared by the use of sputtering technology is used as source electrode, drain electrode.The face of channel length and source-drain electrode
Product can be limited by mask plate.
Claims (5)
1. a kind of preparation method of carbon nanotube heterojunction organic gas sensor, it is characterised in that the CNT is heterogeneous
Knot organic gas sensor includes substrate（1）, grid（2）, dielectric layer（3）, inducing layer（4）, semiconductor layer（5）, it is organic heterogeneous
Tie layer（6）, gas sensing layer（7）, source electrode（8）, drain electrode（9）, substrate（1）Using glass and flexible resin, semiconductor layer（5）To be red glimmering
Alkene（Rubrene ）, monocrystalline mobility reaches 10 cm2/ Vs, hetero junction layer（6）By semiconductor layer（5）Formed with fullerene, it is thick
Degree is not less than 1.5 nm, and no more than 60 nm, implementation process is to do substrate first with glass and flexible resin；Then steamed thereon
One layer of inducing layer induced semiconductor layer stable crystalline is plated, then one layer of fullerene is deposited on the semiconductor layer, forms hetero-junctions；Finally
One layer of organic gas-sensitive material is deposited on hetero junction layer；When organic gas-sensitive layer contacts with gas, it can realize and produce carrier and phase
With higher gas sensing property when not contacted for organic gas-sensitive layer with gas, and organic charge carrier transport layer be then utilize have compared with
The organic heterojunction semiconductor of high mobility, realize the transport effect of carrier.
2. a kind of preparation method of carbon nanotube heterojunction organic gas sensor according to claim 1, its feature exist
In grid（2）, source electrode（8）, drain electrode（9）It is made up of neodymium aluminium, molybdenum tungsten, the metal of molybdenum high conductivity and its metal oxide.
3. a kind of preparation method of carbon nanotube heterojunction organic gas sensor according to claim 1, its feature exist
In dielectric layer（3）For silicon nitride（Si3N4）, thickness is not less than 80 nm, no more than 300 nm.
4. a kind of preparation method of carbon nanotube heterojunction organic gas sensor according to claim 1, its feature exist
In inducing layer（4）For α-four bithiophenes（α-4T）, thickness is not less than 5 nm, no more than 30 nm.
5. a kind of preparation method of carbon nanotube heterojunction organic gas sensor according to claim 1, its feature exist
In gas sensing layer（7）By single-walled carbon nanotube（SCNT）Form, or use multi-walled carbon nanotube（MCNT）Form, thickness is not less than
0.2 nm, no more than 10 nm.
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| CN201410624791.5A CN104316571B (en) | 2014-11-10 | 2014-11-10 | A kind of preparation method of carbon nanotube heterojunction organic gas sensor |
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| CN201410624791.5A CN104316571B (en) | 2014-11-10 | 2014-11-10 | A kind of preparation method of carbon nanotube heterojunction organic gas sensor |
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| CN104316571A CN104316571A (en) | 2015-01-28 |
| CN104316571B true CN104316571B (en) | 2017-12-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104865293A (en) * | 2015-05-19 | 2015-08-26 | 清华大学 | Flexible gas sensor based on three-dimensional net structured sensitive film and preparation method of flexible gas sensor |
| CN105336880B (en) * | 2015-10-23 | 2017-09-12 | 长春工业大学 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
| CN110261461B (en) * | 2019-07-08 | 2021-06-01 | 长春工业大学 | Preparation method of ultrathin heterojunction composite film gas sensor based on OFETs |
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| JPH10123083A (en) * | 1996-10-16 | 1998-05-15 | Chichibu Onoda Cement Corp | Gas sensor |
| KR101104306B1 (en) * | 2009-06-29 | 2012-01-11 | 한국과학기술연구원 | Sensors for detecting temperature and multi gas and methed for manufacturing the same |
| CN102507659B (en) * | 2011-11-28 | 2013-11-13 | 电子科技大学 | Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor |
| CN204330652U (en) * | 2014-07-28 | 2015-05-13 | 长春工业大学 | A kind of organic gas sensor of C-nano tube hetero-junction |
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Inventor after: Wang Lijuan Inventor after: Sun Yang Inventor after: Du Hao Inventor after: Zou Fengjun Inventor after: Li Yiping Inventor before: Wang Lijuan Inventor before: Du Hao Inventor before: Zou Fengjun Inventor before: Li Yiping |
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