CN204330652U - A kind of organic gas sensor of C-nano tube hetero-junction - Google Patents
A kind of organic gas sensor of C-nano tube hetero-junction Download PDFInfo
- Publication number
- CN204330652U CN204330652U CN201420417812.1U CN201420417812U CN204330652U CN 204330652 U CN204330652 U CN 204330652U CN 201420417812 U CN201420417812 U CN 201420417812U CN 204330652 U CN204330652 U CN 204330652U
- Authority
- CN
- China
- Prior art keywords
- layer
- organic gas
- gas sensor
- nano tube
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The utility model discloses a kind of organic gas sensor of C-nano tube hetero-junction.The organic gas sensor of this C-nano tube hetero-junction, comprises dielectric layer, inducing layer, semiconductor layer, hetero junction layer, organic gas-sensitive layer.Adopt C-nanotube as organic gas-sensitive layer, organic gas-sensitive is laminated to be connected with heterojunction, simultaneously with source electrode, draining is connected.Organic gas-sensitive layer realizes producing charge carrier, and organic heterojunction layer then realizes organic charge carrier and transports work.The organic gas sensor of this organic C-nano tube hetero-junction at normal temperatures can be quick, sensitive carry out work, and utilize that vacuum evaporation technique is disposable completes preparation, simplify preparation flow.
Description
Technical field
The utility model relates to a kind of gas sensor, especially a kind of organic gas sensor of C-nano tube hetero-junction.
Background technology
At present, gas sensor of a great variety, common are solid thermal conduction-type sensor, fixed electric potential electroanalysis formula sensor, vapor-phase chromatography sensor.But mainly concentrate on the synthesis of organic semiconductor thin-film with the correlative study of OTFT gas sensor, the aspects such as electric current noise abatement.But the research being aimed at more than semiconductor layer still lacks very much, the character therefore more than semiconductor layer will directly affect the performance of organic heterojunction transistor gas sensor.
Summary of the invention
The present invention, in order to solve problems of the prior art, proposes a kind of organic gas sensor of C-nano tube hetero-junction, its objective is that to overcome the sensitivity that existing gas sensor exists low, and the problem such as response speed is slow.By obtaining the change of semiconductor layer, there is hypersensitivity energy, the organic gas sensor of a kind of C-nano tube hetero-junction of energy rapid response speed.
The problems referred to above of the present utility model are achieved in that first with neodymium aluminium/grid/silicon nitride (Si
3n
4), and doublely do substrate; Then evaporation one deck inducing layer induced semiconductor layer stable crystalline thereon, then evaporation one deck organism on the semiconductor layer, form heterojunction; Finally evaporation one deck organic gas-sensitive material on hetero junction layer.When gas contacts with organic gas-sensitive layer, realize producing charge carrier and having very high gas sensing property, organic charge carrier transport layer is then utilize the organic heterojunction semiconductor with very high mobility, realizes the transport effect of charge carrier.
The utility model organic gas-sensitive is laminated to be connected with heterojunction, one side with source electrode, draining is connected.So very sufficient by the performance characterization of gas sensing layer out, therefore the utility model can improve the performance of organic transistor gas sensor effectively.
The utility model has following characteristics:
Select neodymium aluminium as substrate, so its feature also easily forms gas sensing system at a kind of well gas sensitive.
Described dielectric layer adopts silicon nitride (Si
3n
4), its feature is, hardness is high, specific inductive capacity is large, compact structure, good heat conductivity.
Described inducing layer is α-four bithiophene (α-4T), and its feature is, can better induce rubrene (Rubrene) stable crystalline.
The described heterogeneous heterojunction become rubrene (Rubrene) and fullerene (C60) and form, its feature is, electronics ability to act is strong, and mobility is high.
Described organic gas-sensitive layer adopts single-walled nanotube (SCNT) to form, and also can form with many walls nanotube (MCNT), its feature be to have highly sensitive, fast response time, size are little, energy consumption is low and normally work under room temperature.
Accompanying drawing explanation
Accompanying drawing 1 bottom gate top contact common gas sensor.
The organic gas sensor of accompanying drawing 2 bottom gate top contact C-nano tube hetero-junction.
Embodiment
A) with neodymium aluminium for substrate, and electrode evaporation dielectric layer silicon nitride (Si successively
3n
4), and allow it form gate electrode pattern.
B) the neodymium aluminium substrate of dielectric layer, gate electrode is had with standard technology cleaning evaporation.
C) with the silicon nitride (Si of vacuum evaporation technique in drying
3n
4) substrate prepares one deck α-four bithiophene (α-4T) inducing layer.
D) on inducing layer, one deck rubrene (Rubrene) film is prepared by vacuum evaporation technique.
E) on rubrene (Rubrene) film, prepare one deck fullerene (C60) thin layer by vacuum evaporation technique, form heterojunction.
F) on hetero-junction thin-film, one deck C-nanotube air-sensitive film layer is prepared by vacuum evaporation technique.
G) metal A u is prepared as source electrode, drain electrode by vacuum evaporation technique.The area of channel length and source-drain electrode limits by mask plate.
Claims (8)
1. the organic gas sensor of a C-nano tube hetero-junction comprises: substrate (1), grid (2), dielectric layer (3), inducing layer (4), halfbody layer (5), organic heterojunction layer (6), gas sensing layer (7), source electrode, drain electrode (8).
2. the organic gas sensor of a kind of C-nano tube hetero-junction according to claim 1, is characterized in that, substrate (1) adopts neodymium aluminium.
3. the organic gas sensor of a kind of C-nano tube hetero-junction according to claims 1, is characterized in that, grid (2), and source electrode, drain electrode (8) are gold (Au).
4. the organic gas sensor of a kind of C-nano tube hetero-junction according to claim 1, is characterized in that, dielectric layer (3) is silicon nitride (Si
3n
4).
5. the organic gas sensor of a kind of C-nano tube hetero-junction according to claim 1, is characterized in that, inducing layer (4) is α-four bithiophene (α-4T).
6. the organic gas sensor of a kind of C-nano tube hetero-junction according to claims 1, is characterized in that, semiconductor layer (5) is rubrene (Rubrene).
7. the organic gas sensor of a kind of C-nano tube hetero-junction according to claim 1, is characterized in that, hetero junction layer (6) is made up of semiconductor layer (5) and fullerene (C60).
8. the organic gas sensor of a kind of C-nano tube hetero-junction according to claim 1, is characterized in that, gas sensing layer (7) is made up of single-walled nanotube (SCNT), or forms with many walls nanotube (MCNT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420417812.1U CN204330652U (en) | 2014-07-28 | 2014-07-28 | A kind of organic gas sensor of C-nano tube hetero-junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420417812.1U CN204330652U (en) | 2014-07-28 | 2014-07-28 | A kind of organic gas sensor of C-nano tube hetero-junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204330652U true CN204330652U (en) | 2015-05-13 |
Family
ID=53167001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420417812.1U Expired - Fee Related CN204330652U (en) | 2014-07-28 | 2014-07-28 | A kind of organic gas sensor of C-nano tube hetero-junction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204330652U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316571A (en) * | 2014-11-10 | 2015-01-28 | 长春工业大学 | Preparation method of carbon nanotube-heterojunction organic gas sensor |
| CN109580724A (en) * | 2017-09-29 | 2019-04-05 | 萧育仁 | Mini type gas sensor and its manufacturing method |
-
2014
- 2014-07-28 CN CN201420417812.1U patent/CN204330652U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316571A (en) * | 2014-11-10 | 2015-01-28 | 长春工业大学 | Preparation method of carbon nanotube-heterojunction organic gas sensor |
| CN109580724A (en) * | 2017-09-29 | 2019-04-05 | 萧育仁 | Mini type gas sensor and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kumaki et al. | Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO2 gate-insulator surface | |
| Reese et al. | Detailed Characterization of Contact Resistance, Gate‐Bias‐Dependent Field‐Effect Mobility, and Short‐Channel Effects with Microscale Elastomeric Single‐Crystal Field‐Effect Transistors | |
| Okada et al. | Charge transport and Hall effect in rubrene single-crystal transistors under high pressure | |
| Uno et al. | High-speed organic transistors with three-dimensional organic channels and organic rectifiers based on them operating above 20 MHz | |
| JP2007536703A5 (en) | ||
| CN101657458A (en) | silylethynylated heteroacenes and electronic devices made therewith | |
| CN103000809B (en) | Method for improving performance of organic field effect transistors | |
| Cho et al. | Ultra-high sensitivity pH-sensors using silicon nanowire channel dual-gate field-effect transistors fabricated by electrospun polyvinylpyrrolidone nanofibers pattern template transfer | |
| CN101924028B (en) | Oriented and ordered arrangement method of silicon carbide nanowires based on dielectrophoresis technology | |
| CN204330652U (en) | A kind of organic gas sensor of C-nano tube hetero-junction | |
| CN103399072B (en) | Gas-assisted organic field-effect transistor sensor, and preparation method and applications thereof | |
| Boukhili et al. | Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors | |
| Chung et al. | Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks | |
| Kim et al. | Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors | |
| CN104316571B (en) | A kind of preparation method of carbon nanotube heterojunction organic gas sensor | |
| CN108152336B (en) | Two-dimensional material source follower with gas sensing function | |
| Santato et al. | Tetracene light-emitting transistors on flexible plastic substrates | |
| Hong et al. | Depletion-and ambipolar-mode field-effect transistors based on the organic heterojunction composed of pentacene and hexadecafluorophtholocyaninatocopper | |
| Huang et al. | A fully integrated hepatitis B virus DNA detection SoC based on monolithic polysilicon nanowire CMOS process | |
| CN103760207B (en) | Based on polar molecule gas sensor and the preparation method of organic effect tubular construction | |
| Smith et al. | Wafer scale graphene transfer for back end of the line device integration | |
| Zhu et al. | A perspective on piezotronics and piezo-phototronics based on the third and fourth generation semiconductors | |
| CN106340588A (en) | Preparation method of self-assembled film-optimized n-type organic field-effect transistor | |
| Petrović et al. | Contact resistance in organic thin film transistors | |
| Zhao et al. | Label‐Free DNA Sensors Based on Field‐Effect Transistors with Semiconductor of Carbon Materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150513 Termination date: 20150728 |
|
| EXPY | Termination of patent right or utility model |