CN103000809B - Method for improving performance of organic field effect transistors - Google Patents
Method for improving performance of organic field effect transistors Download PDFInfo
- Publication number
- CN103000809B CN103000809B CN201210557883.7A CN201210557883A CN103000809B CN 103000809 B CN103000809 B CN 103000809B CN 201210557883 A CN201210557883 A CN 201210557883A CN 103000809 B CN103000809 B CN 103000809B
- Authority
- CN
- China
- Prior art keywords
- organic single
- gas
- crystal
- conducting material
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Thin Film Transistor (AREA)
Abstract
The invention provides a method for improving performance of field effect transistors based on organic semiconductor single crystal materials by utilizing oxidizing or reducing gas. By means of the method, gas adsorption processing is performed on the organic semiconductor single crystal materials according to types of semiconductors in the corresponding processing procedures of the field effect transistors which are of an air gap structure, a bottom grid electrode structure and a top grid electrode structure. The field effect transistor based on p-type organic semiconductor single crystal materials is exposed to the oxidizing gas to improve performance such as the migration rate, and the field effect transistor based on n-type organic semiconductor single crystal materials is exposed to the reducing gas to improve performance such as the migration rate. By means of the method, performance such as the migration rate and the switching ratio of the field effect transistors based on the organic semiconductor single crystal materials can be improved. Furthermore, the method is easy to operate, low in cost and wide in application prospect.
Description
Technical field
The invention belongs to organic micro-electronic field, be specifically related to a kind of method improving the field-effect transistor performance of organic single-crystal semi-conducting material
.
Background technology
After the eighties in 19th century, Late Cambrian organic material had field effect characteristic, (A.Tsumura, H. Koezuka, T. Ando, Appl. Phys. Lett. 1986,49,1210) extensively concerned based on the field-effect transistor of organic semiconducting materials.Because its material source is wide, film technique is many, low temperature process, electrical properties are easily modulated, can with flexible substrate be compatible, device size is little, integrated level is high, be applicable to producing and advantage that low cost etc. is given prominence to, organic field effect tube has boundless market prospects.It not only can make extensive complementary integrated circuit (B. Crone, A. Dodabalapur, Y.Y Lin, R. W. Filas, Z. Bao et al. Nature, 2000, 403, 521), broad area device, driving (the J.A. Rogers of flat-panel screens can also be used for, Z. Bao, K. Baldwin, A. Dodabalapur, B. Crone et al. Proc. Nati. Acad. Sci. 2001, 98, 4835), smart card, the field such as identification card and gas sensor (B. Crone, A. Dodabalapur, A. Gelperin, L. Torsi, H.E. Katz, A. J. Lovinger, Z. Bao, Appl. Phys. Lett. 2001, 78, 2229).
But the performance of organic field effect tube still has a certain distance from the requirement of practical application.Therefore, current research mainly concentrates on and improves device performance aspect.These performances mainly comprise: the mobility of device, threshold voltage, on-off ratio and sub-threshold slope etc.Wherein, mobility is one of the most important index evaluating organic semiconducting materials and transistor device (G. Horowitz, Adv. Mater. 1998,10,365), and it determines whether certain organic semiconducting materials can practical application.Therefore, the mobility improving organic semiconducting materials field-effect transistor is the major issue being related to organic field effect tube application prospect always.
At present, the mobility method improving organic field effect tube device mainly contains following several: (1) designs and synthesizes has high performance novel organic semi-conductor material.The mobility of organic field effect tube and organic semi-conductor molecular configuration and crystal structure have close ties, the especially conjugation degree of molecule itself.Therefore, the higher new material of mobility can be obtained by designing and synthesizing.By the continuous effort of researcher, novel organic semi-conductor material is constantly had to be synthesized out (J.A. Merlo, C.R. Newman in recent years; C.P. Gerlach; T.W. Kelley, D.V.Muyres, S.E. Fritz; M.F. Toney; C.D. Frisbie, J. Am. Chem. Soc, 2005; 127,3997; A. Facchetti, M. Mushrush, M. Yoon, G.R. Hutchison, M.A. Ratner, T.J. Marks, J. AM. Chem. Sci. 2004,126,13859; Q. Miao, T. Nguyen, T. Someya, G.B. Blanchet, C. Nuckolls, J. AM. Chem. Sci. 2003,125,10284); (2) improve and optimize organic field effect tube technology of preparing.As, organic semiconductor raw material is repeatedly purified (O.D Jurchescu, J. Baas, T.T.M Palstra, Appl. Phys. Lett. 2004,84,3061), the degree of order and crystalline quality (Z. Bao is improved, A.J. Lovinger, J. Brown, J. AM. Chem. Sci. 1998,120,207), insulating barrier (F. Garnier, G. Horowitz, the X.Z Peng of high-k, D. Fichou, Adv. Mater. 1990,2,592) etc. method improves the mobility of organic field effect tube; (3) adopt new field-effect transistor configuration to improve the performance (M. Morana, G. Bret, C. Brabec, Appl. Phys. Lett. 2005,87,153511) of organic field effect tube.
Although adopt above several method can improve the performance of organic field effect tube, there are some problems.One is, adopts these methods all can raise the cost and extend the R&D cycle.Two are, these procedures are complicated and lack versatility.Three are, these methods need to construct new device or exploitation new material, can not be used for device or the material of existing device configurations or poor-performing.The problems referred to above limit these techniques in the application improving organic field effect tube aspect of performance, in order to overcome these obstacles, promote the practical of organic assembly circuit, need that development cost is cheap, technique simple and the device optimization technique that applicability is strong.
Summary of the invention
The object of this invention is to provide a kind of simple, the effective ways that adopt oxidizability or reducibility gas to improve the field-effect transistor performance based on organic single-crystal semi-conducting material
.
Mainly comprise the steps:
1. for air gap structure device:
1) organic single-crystal semi-conducting material is prepared.
2) with reference to Chinese invention patent (201210095207.2) and prepare air gap field-effect transistor, overall configuration as shown in Figure 1.
3) after prepared by field-effect transistor, in cavity, be filled with relevant gas (p-type semiconductor passes into the oxidizing gas such as nitrogen dioxide, nitric oxide, sulfur dioxide, and n-type semiconductor passes into the reducibility gas such as alcohol), preserve certain hour.Improved the performance of device to raceway groove place by gas absorption.
2. for bottom gate configuration organic single-crystal semiconductor device:
(1) organic single-crystal semi-conducting material is prepared;
(2) (p-type semiconductor passes into the oxidizing gas such as nitrogen dioxide, nitric oxide, sulfur dioxide the organic single-crystal material of synthesis to be put into the gas of certain concentration, n-type semiconductor passes into the reducibility gas such as alcohol), make gas have certain absorption at material surface.
(3) by the organic single-crystal material of existing gas absorption, the way of mechanical transfer is utilized to be prepared into organic single-crystal field effect transistor.
(4) the passivation layer packaging that employing PMMA etc. are compatible with organic material.Overall device configuration as shown in Figure 2.
3. for the organic single-crystal semiconductor device of top grid structure:
(1) organic crystal material is prepared on a special substrate.
(2) before preparing insulating barrier, (p-type semiconductor passes into the oxidizing gas such as nitrogen dioxide, nitric oxide, sulfur dioxide machine crystalline material to be put into associated gas, n-type semiconductor passes into the reducibility gas such as alcohol), make gas have certain absorption at material surface.
(3) prepare insulating barrier and grid, complete the preparation of organic single-crystal field effect transistor.Overall device configuration as shown in Figure 3.
The method specifically has following advantage:
1) when not changing device architecture and semiconductor, device mobility is improved, and cost is lower.
2) do not need comparatively complicated technological process, only need to add gas absorption flow process according to different device configurations in corresponding preparation link, simple to operate.
3) due to the ubiquity of material gas absorption, for device or the material of existing configuration poor-performing, the gas absorption all by corresponding types improves the performances such as mobility greatly.There is very strong applicability.
Accompanying drawing explanation
Fig. 1 is the structural representation of the field-effect transistor taking air gap as insulating barrier;
Fig. 2 is the structural representation of bottom gate configuration organic single-crystal semiconductor field effect transistor;
Fig. 3 is the structural representation of top grid structure organic single-crystal semiconductor field effect transistor;
Fig. 4 is the scanning electron microscope (SEM) photograph of the field-effect transistor taking air gap as insulating barrier;
Fig. 5 is respectively the saturation region transfer curve of device in nitrogen and nitrogen dioxide;
Fig. 6 is respectively the saturation region transfer curve of device in nitrogen and nitric oxide;
Fig. 7 is respectively the saturation region transfer curve of device in nitrogen and sulfur dioxide;
Fig. 8 is respectively the saturation region transfer curve of device in air and alcohol;
Fig. 9 is the saturation region transfer curve of low gate device;
Figure 10 is the saturation region transfer curve of top gate device;
In figure: 1. dielectric substrate 2. grid 3. insulation support layer 4. organic single-crystal semi-conducting material 5. source-drain electrode 6. air gap insulating barrier 7. grid solid isolation layer 8. passivation packaging insulating layer
Embodiment
embodiment 1,nitrogen dioxide is adopted to improve the method for the p-type CuPc organic field effect tube performance of air gap structure:
With reference to Chinese invention patent (200510109070.1), adopt the mode of physical vapor transport, prepare the micro/nano structure of CuPc, the raw material CuPc used in deposition is bought, through 3 sublimation purification from Alfa company.Preparation process is: high-temperature region raw material being placed in two sections of temperature control tube type resistance furnaces with vacuum system, collects substrate and is placed in low-temperature space, under the condition passing into carrier gas (Ar), carry out physical vapor transport deposition.The micro-/ nano linear structure of CuPc can be obtained in low-temperature space.Device fabrication processes with reference to Chinese invention patent (201210095207.2), and air gap trench adopts the PMMA being spin-coated on substrate surface to prepare in conjunction with electron beam lithography.Prepared by source-drain electrode, adopt gold plaque to paste film-electrode method or photoetching process acquisition.Micro-nano monocrystalline adopts Mechanical Moving method to be placed on above air gap.
Concrete steps are as follows:
(1) by standard silicon chip cleaning cleaning glass substrate, the method for photoetching is used subsequently, preparation Ti/Au(10nm/20nm) electrode is as the grid of device;
(2) analyzing pure petroleum ether solvent outfit mass ratio is the PMMA of 6%, and the PMMA solution prepared is dripped on the glass sheet, with sol evenning machine spin coating, once (spin-coating time is 40s, rotating speed is 4500r/min), baking 90 seconds on the hot plate of 185 DEG C subsequently, solvent in PMMA is volatilized rapidly, finally can obtain the PMMA supporting layer of 200nm;
(3) on grid, preparing width by electron beam lithography is the smooth grooves in 3.3 microns of bottoms (electric conducting material, i.e. grid), and channel bottom is Ti/Au, i.e. grid.Groove both sides are for supporting CuPc nanobelt.
(4) fluoride micro-nano adopts the mode of Mechanical Moving that single CuPc nanobelt is placed on above air gap, and micro-nano monocrystalline width is 300nm.
(5) adopt gold plaque to paste film-electrode method (Tang et al. Appl. Phys. Lett. 92,083309,2008) and prepare source-drain electrode, and CuPc is connected with macroscopic electrode simultaneously.
(6) namely the air gap between semiconductor and channel bottom to grid forms the gate insulator of device, and the thickness of PMMA supporting layer is the height of air gap insulating barrier, and the distance between two electrodes is groove width.The channel width of the single fieldtron of micro-nano monocrystalline finally constructed is 300nm, and channel length is 3.3 μm.The grid that Fig. 1 and Fig. 4 is divided into the single nanobelt of CuPc to prepare is structural representation and the SEM photo of the field effect gas sensor of Ti/Au.
(7) to put up and the device being connected in macroscopic electrode is connected on chip by gold wire bonder connection technology, and be installed in the homemade stainless steel test macro in laboratory.
(8) nitrogen of 99.999% purity of 500sccm is passed in cavity, 30 more than min, until device reaches stable completely.
(9) device stable after, then be filled with in cavity and pass into nitrogen dioxide.During test saturation region transfer curve, source-drain current is-15 V, and gated sweep scope is between 10V to-10 V.
(10) by semiconductor coefficient measuring instrument (Keithley 4200-SCS) transfer curve of measuring element in nitrogen and nitrogen dioxide respectively, as shown in Figure 5.By calculating, the mobility of device is by 0.03 initial cm
2/ V.s brings up to 0.37 cm
2/ V.s.
embodiment 2,nitric oxide is adopted to improve the method for the p-type CuPc organic field effect tube performance of air gap structure:
(1) step (1)-(8) in implementation column 1 are adopted to obtain field-effect transistor.
(2), after field-effect transistor is stablized, nitric oxide is passed into.Regulated by two mass flowmenter mixing High Purity Nitrogens and standard nitric oxide.By the total flow of the accurate control 500sccm of mass flowmenter.During test saturation region transfer curve, source-drain current is-15 V, and gated sweep scope is between 10V to-10 V.
(3) by semiconductor coefficient measuring instrument (Keithley 4200-SCS) transfer curve of measuring element in nitrogen and nitric oxide respectively, as shown in Figure 6.By calculating, the 0.001cm that the mobility of device is initial
2/ V.s brings up to 0.006cm
2/ V.s.
embodiment 3,sulfur dioxide is adopted to improve the method for the p-type CuPc organic field effect tube performance of air gap structure:
(1) step (1)-(8) in implementation column 1 are adopted to obtain device.
(2), after device is stablized, sulfur dioxide is passed into.Regulated by two mass flowmenter mixing High Purity Nitrogens and standard sulfur dioxide.By the total flow of the accurate control 500sccm of mass flowmenter.During test saturation region transfer curve, source-drain current is-15 V, and gated sweep scope is between 10V to-10 V.
(3) by semiconductor coefficient measuring instrument (Keithley 4200-SCS) transfer curve of measuring element in nitrogen and sulfur dioxide respectively, as shown in Figure 7.By calculating, the 0.007cm that the mobility of device is initial
2/ V.s brings up to 0.047cm
2/ V.s.
embodiment 4,alcohol is adopted to improve the method for the n-type perfluor CuPc organic field effect tube performance of air gap structure:
(1) step (1)-(8) in implementation column 1 are adopted to obtain device.Difference is: p-type CuPc n-type perfluor CuPc is substituted.
(2), after device is stablized, the alcohol of one glass of 10ml is put into cavity, tests.During test saturation region transfer curve, source-drain current is-40 V, and gated sweep scope is between-5V to 40 V.
(3) by semiconductor coefficient measuring instrument (Keithley 4200-SCS) transfer curve of measuring element in nitrogen and alcohol respectively, as shown in Figure 8.By calculating, the 0.0038cm that the mobility of device is initial
2/ V.s brings up to 0.0043cm
2/ V.s.
embodiment 5,nitrogen dioxide is adopted to improve the method for the p-type CuPc organic field effect tube performance of bottom gate configuration:
(1) method in implementation column 1 is adopted to prepare CuPc monocrystalline micro-/ nano line.
(2) the CuPc monocrystalline micro-/ nano line of synthesis is put into the gas nitrogen dioxide of certain concentration, make gas have certain absorption at material surface.
(3) by the organic single-crystal material of existing gas absorption, the way of mechanical transfer is utilized to be prepared into the field-effect transistor of bottom gate configuration.Structure is as shown in Figure 2.
(4) the method PMMA passivation layer packaging of spin coating is adopted.
(5) by semiconductor coefficient measuring instrument (Keithley 4200-SCS) measuring element transfer curve, as shown in Figure 9.During test saturation region transfer curve, source-drain current is-15 V, and gated sweep scope is between 10V to-15 V.
By calculating, the mobility of device is 0.5cm
2/ V.s.
embodiment 6,nitric oxide is adopted to improve the method for the p-type CuPc organic field effect tube performance of top grid structure:
(1) method in implementation column 1 is adopted to prepare CuPc monocrystalline micro-/ nano line.
(2) utilize the way of mechanical transfer that CuPc monocrystalline micro-/ nano line is moved on to Si/SiO
2on substrate.
(3) adopt gold plaque to paste film-electrode method (Tang et al. Appl. Phys. Lett. 92,083309,2008) and prepare source-drain electrode.
(3) before preparing insulating barrier, device is put into the gaseous nitric oxide of certain concentration, make gas have certain absorption at material surface.
(4) the PMMA insulating barrier of step 2 spin coating 200 nm in implementation column 1.
(5) adopt gold plaque to paste film-electrode method (Tang et al. Appl. Phys. Lett. 92,083309,2008) and prepare grid.Device architecture is for shown in Fig. 3.
(6) by semiconductor coefficient measuring instrument (Keithley 4200-SCS) measuring element transfer curve, as shown in Figure 10.During test saturation region transfer curve, source-drain current is-15 V, and gated sweep scope is between 10V to-15V.
By calculating, the mobility of device is 0.2cm
2/ V.s.
Claims (3)
1. improve the method for the field-effect transistor performance of the organic single-crystal semi-conducting material of air gap structure, it is characterized in that: prepare organic single-crystal semiconductor, described organic single-crystal semi-conducting material across in both sides be insulating material groove on, described organic single-crystal semi-conducting material on groove is unsettled, air between described organic single-crystal semi-conducting material and channel bottom metal gates is as the field-effect transistor of insulating barrier, after prepared by field-effect transistor, relevant gas is filled with in cavity, wherein: when described organic single-crystal semi-conducting material is p-type semiconductor, pass into oxidizing gas, i.e. nitrogen dioxide or nitric oxide or sulfur dioxide, described organic single-crystal semi-conducting material passes into reproducibility alcohol gas when being n-type semiconductor, gas absorption is made to arrive raceway groove place.
2. the method for the field-effect transistor performance of the organic single-crystal semi-conducting material of raising bottom gate configuration according to claim 1, prepare organic single-crystal semi-conducting material, it is characterized in that: the organic single-crystal material of synthesis is put into relevant gas wherein: when organic single-crystal semi-conducting material is p-type semiconductor, pass into oxidizing gas, i.e. nitrogen dioxide or nitric oxide or sulfur dioxide, organic single-crystal semi-conducting material passes into reducibility gas alcohol when being n-type semiconductor, makes gas have certain absorption at material surface; By the organic single-crystal semi-conducting material of existing gas absorption, the way utilizing mechanical probes to shift is prepared into organic single-crystal field effect transistor; Adopt the passivation layer packaging that PMMA is compatible with organic material.
3. the method improving the field-effect transistor performance of the organic single-crystal semi-conducting material of top grid structure according to claim 1, prepare organic single-crystal semiconductor material body on a special substrate, it is characterized in that: before preparing insulating barrier, organic single-crystal semiconductor material body is put into relevant gas, wherein: when organic single-crystal semi-conducting material is p-type semiconductor, pass into oxidizing gas, i.e. nitrogen dioxide or nitric oxide or sulfur dioxide, organic single-crystal semi-conducting material passes into reproducibility alcohol gas when being n-type semiconductor, gas is made to have certain absorption at material surface, prepare insulating barrier and grid, complete field-effect transistor preparation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210557883.7A CN103000809B (en) | 2012-12-20 | 2012-12-20 | Method for improving performance of organic field effect transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210557883.7A CN103000809B (en) | 2012-12-20 | 2012-12-20 | Method for improving performance of organic field effect transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103000809A CN103000809A (en) | 2013-03-27 |
| CN103000809B true CN103000809B (en) | 2015-06-03 |
Family
ID=47929141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210557883.7A Expired - Fee Related CN103000809B (en) | 2012-12-20 | 2012-12-20 | Method for improving performance of organic field effect transistors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103000809B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112819B (en) * | 2014-07-17 | 2017-06-20 | 东北师范大学 | A kind of organic single-crystal field effect circuit and preparation method thereof |
| CN104134749B (en) | 2014-07-17 | 2017-03-01 | 东北师范大学 | Layer flexible plane embeds laminate patch electrode and preparation method thereof and the application in organic field single-crystal field effect transistor |
| CN104713930B (en) * | 2015-03-17 | 2017-07-21 | 东北师范大学 | A kind of method of the identification gaseous species based on field-effect gas sensor |
| KR101792644B1 (en) * | 2017-03-02 | 2017-11-02 | 울산과학기술원 | High-mobility transistor and a method of manufacturing the same |
| CN107340315A (en) * | 2017-05-18 | 2017-11-10 | 新疆工程学院 | A kind of FET formula gas sensors with composite insulation structure and preparation method thereof |
| CN108931322A (en) * | 2017-05-24 | 2018-12-04 | 东北师范大学 | A kind of hypersensitive field effect type touch sensor and its application in terms of micro-dimension object detection |
| KR101824686B1 (en) | 2017-08-10 | 2018-02-01 | 울산과학기술원 | High-mobility transistor |
| CN108956707A (en) * | 2018-04-27 | 2018-12-07 | 苏州诺登德智能科技有限公司 | A kind of NO2The preparation method of sensor |
| CN110849252B (en) * | 2019-11-14 | 2021-06-18 | 东北师范大学 | Method for preparing large-area conformable semiconductor type proximity sensor |
| WO2021208077A1 (en) * | 2020-04-17 | 2021-10-21 | 北京大学深圳研究生院 | Organic field effect transistor and manufacturing method therefor |
| US11937438B2 (en) | 2020-04-17 | 2024-03-19 | Peking University Shenzhen Graduate School | Organic field-effect transistor and fabrication method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6226268A (en) * | 1985-07-26 | 1987-02-04 | Mitsubishi Chem Ind Ltd | Organic semiconductor |
| JPH07122492A (en) * | 1993-10-25 | 1995-05-12 | Applied Materials Inc | Formation method of thin film |
| KR20080096932A (en) * | 2007-04-30 | 2008-11-04 | 주식회사 성림피에스 | Contamination removal method at vapor condensation gas |
-
2012
- 2012-12-20 CN CN201210557883.7A patent/CN103000809B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6226268A (en) * | 1985-07-26 | 1987-02-04 | Mitsubishi Chem Ind Ltd | Organic semiconductor |
| JPH07122492A (en) * | 1993-10-25 | 1995-05-12 | Applied Materials Inc | Formation method of thin film |
| KR20080096932A (en) * | 2007-04-30 | 2008-11-04 | 주식회사 성림피에스 | Contamination removal method at vapor condensation gas |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103000809A (en) | 2013-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103000809B (en) | Method for improving performance of organic field effect transistors | |
| Meijer et al. | Solution-processed ambipolar organic field-effect transistors and inverters | |
| CN105866215B (en) | A kind of Organic Thin Film Transistors gas sensor and preparation method thereof | |
| Zaki et al. | Accurate capacitance modeling and characterization of organic thin-film transistors | |
| CN102621210A (en) | Field effect gas sensor taking air gap as insulation layer and preparation method thereof | |
| CN110265548A (en) | A kind of indium doping N type organic thin-film transistor and preparation method thereof | |
| CN101101967A (en) | Low-cost and high-performance organic field effect transistor and its making method | |
| Boukhili et al. | Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors | |
| Zessin et al. | Threshold voltage control in organic field-effect transistors by surface doping with a fluorinated alkylsilane | |
| CN103594626A (en) | Organic thin film transistor and manufacturing method thereof | |
| Kneppe et al. | Solution-processed pseudo-vertical organic transistors based on TIPS-pentacene | |
| Jang et al. | Air stable C60 based n-type organic field effect transistor using a perfluoropolymer insulator | |
| Sun et al. | Dirac-cone induced gating enhancement in single-molecule field-effect transistors | |
| CN104882541A (en) | Metal quantum dot/organic semiconductor composite conductive channel film transistor preparation method | |
| Liu et al. | Bias-stress-induced instability of polymer thin-film transistor based on poly (3-Hexylthiophene) | |
| Chen et al. | Fabrication of vertical channel top contact organic thin film transistors | |
| Peng et al. | Complementary-like inverter based on organic-inorganic heterojunction ambipolar transistors on flexible substrate | |
| CN105679939A (en) | Doped thiophene isoindigo-based organic thin-film field effect transistor and preparation method thereof | |
| CN101740719B (en) | Field effect transistor device using carbon nano tube as electrode and preparation method thereof | |
| CN101267021A (en) | Organic bipolar film transistor and its making method | |
| Ji et al. | Polymer mask-weakening grain-boundary effect: towards high-performance organic thin-film transistors with mobility closing to 20 cm 2 V− 1 s− 1 | |
| CN206756733U (en) | A kind of FET formula gas sensors with composite insulation structure | |
| CN109004088A (en) | A kind of preparation method of organic semiconductor thin film transistor | |
| Han et al. | Vertical integration: a key concept for future flexible and printed electronics | |
| CN103700581A (en) | Method for manufacturing metal and n-type semiconductor germanium source drain contact |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150603 Termination date: 20161220 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |