CN110265548A - A kind of indium doping N type organic thin-film transistor and preparation method thereof - Google Patents
A kind of indium doping N type organic thin-film transistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 47
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 238000004528 spin coating Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
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- 239000010931 gold Substances 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000004411 aluminium Substances 0.000 claims abstract description 5
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- 238000010438 heat treatment Methods 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000003960 organic solvent Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
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- 238000002207 thermal evaporation Methods 0.000 claims description 11
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 4
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- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Substances ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of indium doping N type organic thin-film transistor and preparation method thereof, the N type organic thin-film transistor has top-gated bottom contact structures.Preparation method prepares one layer of gold as source electrode and drain electrode by mask plate on a glass substrate first, one layer of indium is prepared on gold electrode again as doped layer, then sol-gal process is utilized, N-type organic semiconductor active layer is formed having prepared the sample surfaces that electrode finishes, and one layer of dielectric material of spin coating prepares aluminium in surface of insulating layer finally by mask plate and forms gate electrode as insulating layer on active layer.Organic Thin Film Transistors prepared by this method has been significantly improved compared to conventional organic thin film transistor, on-off ratio and carrier mobility, and the subthreshold swing and threshold voltage of device substantially reduce.The present invention improves the electric property of the N type organic thin-film transistor of top-gated bottom contact structures, has the characteristics that low in cost, processing step is simple and is widely used in N type organic thin-film transistor.
Description
Technical field
The present invention relates to microelectronic material and device technologies and information to show etc. that fields, especially a kind of indium doping N-type have
Machine thin film transistor (TFT) and preparation method thereof.
Background technique
Organic semiconductor is used to obtain extensive concern in the late three decades as the active layer in thin film transistor (TFT), with altogether
Conjugated polymer, low polymer and fusion aromatic hydrocarbons as semiconductor material Organic Thin Film Transistors relative to using inorganic semiconductor
Field effect transistor have special advantage, such as can be used for large area, flexibility, low temperature process (close to room temperature), low cost and
The production of transparent novel TFT.Organic Thin Film Transistors can be applied to active matrix plane show, organic electroluminescence hair
Optical diode and " Electronic Paper " are shown and the fields such as sticking type sensor, wireless radio frequency identification mark.
Since organic semiconducting materials electronics is difficult to inject, and easily by the interference of moisture in air and oxygen, N-type is organic
The development of semiconductor material far lags behind p-type organic semiconducting materials.P-type organic transistor has compared to N-type organic transistor
Higher on-off ratio and mobility and lower subthreshold swing, threshold voltage and contact resistance.However, having high migration
Rate, air-stable, can the preparation of solution method N-type semiconductor material it is extremely short, greatly limit and be with Organic Thin Film Transistors
The development of the flexible electronic device and organic integrated circuits on basis.
The excellent N type organic thin-film transistor of processability is a vital step for Organic Thin Film Transistors development.
Generalling use the method improvement N-type for carrying out molecular structure change or chemical element replacement to organic semiconducting materials in the world has
The performance of machine semiconductor, these methods can make N type organic thin-film transistor electric property close to p-type Organic Thin Film Transistors
Electric property, and simple process, low in cost, applicability is extensive, has pushed the development of N type organic thin-film transistor significantly.
Summary of the invention
In view of this, the present invention provides a kind of indium doping N type organic thin-film transistors and preparation method thereof.Its preparation side
The applicable Organic Thin Film Transistors of method is top-gated bottom contact structures, and transistor is successively from top to bottom grid, dielectric layer, N-type half
Conductor active layer, source/drain electrode and substrate.This method is after Organic Thin Film Transistors prepares source/drain electrode, by covering
Film version alignment forms one layer of doped layer on source/drain electrode surface, by the doped layer to N type organic thin-film transistor reality
Existing contact doping, improves the electric property of N type organic thin-film transistor.
A kind of preparation method of indium doping N type organic thin-film transistor provided by the invention, comprising the following specific steps
Step 1: the preparation of solution
A1: the configuration of semiconductor solution
N-type organic semiconducting materials and organic solvent are configured with the mass volume ratio of 8mg/ml；Wherein, the N
Type organic semiconducting materials are as follows: [N, N '-bis- (2- octyldodecyl) -1,4,5,8- benzene-naphthalene diimide -2,6- are biradical-simultaneously -5,
5 '-(2,2 '-bis- thiophene)] polymer (N2200)；The organic solvent is chlorobenzene or paracide；
A2: the configuration of insulating layer solution
The organic solvent of insulating layer material and highly dissoluble is configured with the mass volume ratio of 80mg/ml；Wherein, institute
Stating insulating layer material is high molecular polymer；The organic solvent of the highly dissoluble is acetic acid or methyl acetate；
A3: the dissolution of solution
The semiconductor solution of configuration and insulating layer solution are individually placed to 60 DEG C of standings in heating plate to dissolve 24 hours；
Step 2: the preparation of device
B1: the cleaning of substrate
Insulating substrate is selected, substrate is sequentially placed in deionized water, acetone, alcohol, it is clear with supersonic cleaning machine respectively
It washes 10 minutes, is then dried up with nitrogen gun；
B2: the preparation of source-drain electrode
Using vacuum thermal evaporation coating technique, in vacuum 10-5~10-4Under the conditions of Pa, using stainless steel mask plate in substrate
The gold that upper evaporation thickness is 30 nanometers is as source-drain electrode；Wherein, hot evaporation electric current is 100-160A, rate 0.01-
0.05nm/s；
B3: the preparation of doped layer
Using vacuum thermal evaporation coating technique, in vacuum 10-5~10-4Under the conditions of Pa, using stainless steel mask plate in source and drain
The indium that evaporation thickness is 5~15 nanometers on electrode surface is as doped layer；Wherein, hot evaporation electric current is 60-100A, and rate is
0.01-0.02nm/s。
B4: the preparation of semiconductive thin film
Configured good semiconductor solution is paved on surface on substrate by liquid-transfering gun, using spin coating instrument 500rpm's
Spin coating 5 seconds under revolving speed, then spin coating 40-80 seconds under the revolving speed of 2000rpm；Under pure argon environment, by spin coating in this step half
The sample that conductor layer finishes be placed in heating plate with 110 DEG C heating anneal 20 minutes；The thickness of semiconductor film range of preparation
For 35~45 nanometers, as active layer.
B5: the preparation of insulating layer of thin-film
Configured good insulating layer solution is paved in semiconductive thin film upper surface by liquid-transfering gun, is first existed using spin coating instrument
Spin coating 5 seconds under the revolving speed of 500rpm, then spin coating 60 seconds under the revolving speed of 2000rpm；Under pure argon environment, it will be revolved in this step
Apply the sample that finishes of insulating layer be placed in heating plate with 80 DEG C heating anneal 2 hours；
B6: the preparation of grid
By the calibration of optical microscopy, make the channel pair between the aperture position and source electrode and drain electrode of stainless steel mask plate
It answers, recycling vacuum thermal evaporation coating technique, surface prepares the aluminium with a thickness of 60 nanometers as gate electrode on the insulating layer, obtains
The indium doping N type organic thin-film transistor.
In step A2, the high molecular polymer is polymethacrylates, polystyrene or perfluor (butyl ethylene
Ether) polymer, there are at least 90 degree of contact angles with water.
In step B1, the insulating substrate is glass, silica or poly terephthalic acid class plastics.
Organic Thin Film Transistors prepared by this method is compared to conventional organic thin film transistor, devices switch ratio and load
Stream transport factor has been significantly improved, and the subthreshold swing and threshold voltage of device substantially reduce.The present invention improves top
The electric property of the N type organic thin-film transistor of grid bottom contact structures has low in cost, processing step suitable simply and extensively
The characteristics of for N type organic thin-film transistor.
Detailed description of the invention
Fig. 1 is the cross section structure schematic diagram of comparative example N type organic thin-film transistor；
Fig. 2 is the cross section structure schematic diagram of the indium doping N type organic thin-film transistor of the method for the invention preparation；
Fig. 3 is that the transfer of N type organic thin-film transistor prepared by undoped conventional method and the method for the present invention is special
Linearity curve comparison diagram.
Specific embodiment
For the present invention by traditional electrode preparation process, the upper surface under the autoregistration of mask plate in electrode prepares one layer
The controllable and fine and close undoped inalas layer of thickness.It is organic with N-type can to effectively reduce source-drain electrode because of its lower work function for indium
The schottky barrier height that semiconductor contact is formed, is conducive to transmission of the electronics between interface, and indium can partly be led not destroying
Under the premise of body active layer molecular structure, electron adulterated, the load of increase N-type organic semiconductor thin-film is carried out to semiconductor active layer
Sub- concentration is flowed, so that the on-off ratio of Organic Thin Film Transistors, mobility are significantly improved, and its subthreshold swing and threshold
Threshold voltage is all substantially reduced.Therefore through the invention, the electric property of N type organic thin-film transistor may make to be substantially improved.
The present invention is further described with reference to the accompanying drawings and embodiments.
Following present invention provides preferred embodiment, but should not be considered limited to embodiment set forth herein, Fan Yiben
The equivalent changes and modifications that patent application range is done, are all covered by the present invention.
Fig. 2 is the schematic diagram of idealized embodiments of the invention, and embodiment shown in the present invention should not be considered as only limiting
Specific shape in region shown in figure.It being indicated in the present embodiment with rectangle, the expression in figure is schematical, but this
It should not be considered as limiting the scope of the invention.
Comparative example
Undoped conventional organic thin film transistor preparation
A1: the configuration of semiconductor solution
N-type organic semiconducting materials and organic solvent are configured with the mass volume ratio of 8mg/ml；Wherein, the N
Type organic semiconducting materials are as follows: [N, N '-bis- (2- octyldodecyl) -1,4,5,8- benzene-naphthalene diimide -2,6- are biradical-simultaneously -5,
5 '-(2,2 '-bis- thiophene)] polymer (N2200)；The organic solvent is chlorobenzene；
A2: the configuration of insulating layer solution
The organic solvent of insulating layer material and highly dissoluble is configured with the mass volume ratio of 80mg/ml；Wherein, institute
Stating insulating layer material is polymethacrylates (PMMA)；The organic solvent of the highly dissoluble is methyl acetate；
A3: the dissolution of solution
The semiconductor solution of configuration and insulating layer solution are individually placed to 60 DEG C of standings in heating plate to dissolve 24 hours；
Step 2: the preparation of device
B1: the cleaning of substrate
Insulating substrate is selected, substrate is sequentially placed in deionized water, acetone, alcohol, it is clear with supersonic cleaning machine respectively
It washes 10 minutes, is then dried up with nitrogen gun；
B2: the preparation of source-drain electrode
Using vacuum thermal evaporation coating technique, under vacuum conditions (10-4Pa it) is steamed on substrate using stainless steel mask plate
The gold with a thickness of 30 nanometers is plated as source-drain electrode；Wherein, hot evaporation electric current is 100-160A, rate 0.01-0.05nm/s；
B3: the preparation of semiconductive thin film
Configured good semiconductor solution is paved on surface on substrate by liquid-transfering gun, using spin coating instrument 500rpm's
Spin coating 5 seconds under revolving speed, then spin coating 40-80 seconds under the revolving speed of 2000rpm；Under pure argon environment, by spin coating in this step half
The sample that conductor layer finishes be placed in heating plate with 110 DEG C heating anneal 20 minutes；The thickness of semiconductor film range of preparation
For 35~45 nanometers, as active layer.
B4: the preparation of insulating layer of thin-film
Configured good insulating layer solution is paved in semiconductive thin film upper surface by liquid-transfering gun, is first existed using spin coating instrument
Spin coating 5 seconds under the revolving speed of 500rpm, then spin coating 60 seconds under the revolving speed of 2000rpm；Under pure argon environment, it will be revolved in this step
Apply the sample that finishes of insulating layer be placed in heating plate with 80 DEG C heating anneal 2 hours；
B5: the preparation of grid
By the calibration of optical microscopy, make the channel pair between the aperture position and source electrode and drain electrode of stainless steel mask plate
It answers, recycling vacuum thermal evaporation coating technique, surface prepares the aluminium with a thickness of 60 nanometers as gate electrode on the insulating layer, obtains
Conventional n-type Organic Thin Film Transistors.
As shown in FIG. 1, FIG. 1 is the cross section structure schematic diagrams of the conventional n-type Organic Thin Film Transistors prepared according to comparative example.
Embodiment
A1: the configuration of semiconductor solution
N-type organic semiconducting materials and organic solvent are configured with the mass volume ratio of 8mg/ml；Wherein, the N
Type organic semiconducting materials are as follows: [N, N '-bis- (2- octyldodecyl) -1,4,5,8- benzene-naphthalene diimide -2,6- are biradical-simultaneously -5,
5 '-(2,2 '-bis- thiophene)] polymer (N2200)；The organic solvent is chlorobenzene；
A2: the configuration of insulating layer solution
The organic solvent of insulating layer material and highly dissoluble is configured with the mass volume ratio of 80mg/ml；Wherein, institute
Stating insulating layer material is polymethacrylates (PMMA)；The organic solvent of the highly dissoluble is methyl acetate；
A3: the dissolution of solution
The semiconductor solution of configuration and insulating layer solution are individually placed to 60 DEG C of standings in heating plate to dissolve 24 hours；
Step 2: the preparation of device
B1: the cleaning of substrate
Insulating substrate is selected, substrate is sequentially placed in deionized water, acetone, alcohol, it is clear with supersonic cleaning machine respectively
It washes 10 minutes, is then dried up with nitrogen gun；
B2: the preparation of source-drain electrode
Using vacuum thermal evaporation coating technique, under vacuum conditions (10-4Pa it) is steamed on substrate using stainless steel mask plate
The gold with a thickness of 30 nanometers is plated as source-drain electrode；Wherein, hot evaporation electric current is 100-160A, rate 0.01-0.05nm/s；
B3: the preparation of doped layer
Using vacuum thermal evaporation coating technique, under vacuum conditions (10-4Pa) using stainless steel mask plate in source-drain electrode
The indium that evaporation thickness is 5~15 nanometers on surface is as doped layer；Wherein, hot evaporation electric current is 60-100A, rate 0.01-
0.02nm/s。
B4: the preparation of semiconductive thin film
Configured good semiconductor solution is paved on surface on substrate by liquid-transfering gun, using spin coating instrument 500rpm's
Spin coating 5 seconds under revolving speed, then spin coating 40-80 seconds under the revolving speed of 2000rpm；Under pure argon environment, by spin coating in this step half
The sample that conductor layer finishes be placed in heating plate with 110 DEG C heating anneal 20 minutes；The thickness of semiconductor film range of preparation
For 35~45 nanometers, as active layer.
B5: the preparation of insulating layer of thin-film
Configured good insulating layer solution is paved in semiconductive thin film upper surface by liquid-transfering gun, is first existed using spin coating instrument
Spin coating 5 seconds under the revolving speed of 500rpm, then spin coating 60 seconds under the revolving speed of 2000rpm；Under pure argon environment, it will be revolved in this step
Apply the sample that finishes of insulating layer be placed in heating plate with 80 DEG C heating anneal 2 hours；
B6: the preparation of grid
By the calibration of optical microscopy, make the channel pair between the aperture position and source electrode and drain electrode of stainless steel mask plate
It answers, recycling vacuum thermal evaporation coating technique, surface prepares the aluminium with a thickness of 60 nanometers as gate electrode on the insulating layer, obtains
The indium doping N type organic thin-film transistor.
As shown in Fig. 2, Fig. 2 is the cross section structure schematic diagram of indium doping N type organic thin-film transistor manufactured in the present embodiment；
Fig. 3 is the saturation region transfer characteristic curve comparison for being respectively Organic Thin Film Transistors obtained by comparative example and embodiment
Figure.It can be obtained refering to Fig. 3, its saturation region transfer characteristic curve of the transistor of embodiment preparation has very big improvement.To unite in detail
The change of its specific electrical parameter is counted, table 1 lists on-off ratio, mobility, subthreshold swing and the threshold value electricity of two kinds of devices
The electrical parameters such as pressure.For undoped conventional organic thin film transistor, on-off ratio 104, mobility be 0.116 square li
Rice/(volt second), subthreshold swing is 2.67 volts/units magnitude, threshold voltage is 7.25 volts, and for doping after
Organic Thin Film Transistors, on-off ratio be 2 × 105, mobility be 0.356 square centimeter/(volt second), subthreshold swing
It is 0.18 volt for 0.87 volt/units magnitude, threshold voltage.It therefore, can from four transistor core electrical parameter indexs
To observe, the electric property through N type organic thin-film transistor prepared by the present invention is all obviously improved, organic to N-type
The further development of thin film transistor (TFT), there is very important meaning.
Undoped inalas layer is to source/drain electrode with the contact adjustment effect of N-type semiconductor active layer and to N-type organic semi-conductor
Electron injection effect is the main reason for promoting transistor performance to optimize.In fact, having high mobility, air-stable, solvable
The N-type semiconductor material of liquid method preparation is extremely short, and the performance of undoped conventional n-type Organic Thin Film Transistors lags significantly behind
P-type Organic Thin Film Transistors greatly limits flexible electronic device and organic integration electricity based on Organic Thin Film Transistors
The development on road.And the N type organic thin-film transistor after the method for the present invention is adulterated, electrode surface work function have close to N-type
The lumo energy of machine semiconductor is conducive to electronics drift to reduce the Schottky barrier between source-drain electrode and semiconductor；And
Indium has the function of electron adulterated injection for semiconductor, so that the carrier concentration in channel is increased, so that N-type is organic thin
The electric property of film transistor is obviously improved.It can be obtained refering to table 1, the transistor switch ratio prepared through the invention is
20 times of the device of conventional method preparation, carrier mobility is increased to 3 times of traditional devices, and its subthreshold swing and threshold value
Voltage has all obtained apparent reduction.
Therefore, by the invention it is possible to which solving N type organic thin-film transistor performance far lags behind p-type organic thin-film transistor
The problem of pipe performance, its every electric property is significantly promoted, the large-scale commercial applications application to Organic Thin Film Transistors is realized has
Very important meaning.
Table 1
| Organic Thin Film Transistors electrical parameter | Before doping | After doping |
| On-off ratio | 104 | 2×105 |
| Mobility (square centimeter/(the volt second) | 0.116 | 0.356 |
| Subthreshold swing (volt/units magnitude) | 2.67 | 0.87 |
| Threshold voltage (volt) | 7.25 | 1.18 |
Claims (4)
1. a kind of preparation method of indium doping N type organic thin-film transistor, which is characterized in that this method includes walking in detail below
It is rapid:
Step 1: the preparation of solution
A1: the configuration of semiconductor solution
N-type organic semiconducting materials and organic solvent are configured with the mass volume ratio of 8mg/ml；Wherein, the N-type has
Machine semiconductor material are as follows: [N, N '-bis- (2- octyldodecyl) -1,4,5,8- benzene-naphthalene diimide -2,6- are biradical-simultaneously -5,5 ' -
(2,2 '-bis- thiophene)] polymer (N2200)；The organic solvent is chlorobenzene or paracide；
A2: the configuration of insulating layer solution
The organic solvent of insulating layer material and highly dissoluble is configured with the mass volume ratio of 80mg/ml；Wherein, described exhausted
Edge layer material is high molecular polymer, and the organic solvent of the highly dissoluble is acetic acid or methyl acetate；
A3: the dissolution of solution
The semiconductor solution of configuration and insulating layer solution are individually placed to 60 DEG C of standings in heating plate to dissolve 24 hours；
Step 2: the preparation of device
B1: the cleaning of substrate
Insulating substrate is selected, substrate is sequentially placed in deionized water, acetone, alcohol, cleans 10 with supersonic cleaning machine respectively
Minute, then dried up with nitrogen gun；
B2: the preparation of source-drain electrode
Using vacuum thermal evaporation coating technique, in vacuum 10-5~10-4Under the conditions of Pa, it is deposited on substrate using stainless steel mask plate
With a thickness of 30 nanometers of gold as source-drain electrode；Wherein, hot evaporation electric current is 100-160 A, and rate is 0.01-0.05 nm/s；
B3: the preparation of doped layer
Using vacuum thermal evaporation coating technique, in vacuum 10-5~10-4Under the conditions of Pa, using stainless steel mask plate in source-drain electrode table
The indium that evaporation thickness is 5 ~ 15 nanometers on face is as doped layer；Wherein, hot evaporation electric current is 60-100 A, rate 0.01-
0.02 nm/s；
B4: the preparation of semiconductive thin film
Configured good semiconductor solution is paved on surface on substrate by liquid-transfering gun, using spin coating instrument 500rpm revolving speed
Lower spin coating 5 seconds, then spin coating 40-80 seconds under the revolving speed of 2000rpm；Under pure argon environment, by spin coating semiconductor in this step
The sample that finishes of layer be placed in heating plate with 110 DEG C heating anneal 20 minutes；The thickness of semiconductor film range of preparation be 35 ~
45 nanometers, as active layer；
B5: the preparation of insulating layer of thin-film
Configured good insulating layer solution is paved in semiconductive thin film upper surface by liquid-transfering gun, is first existed using spin coating instrument
Spin coating 5 seconds under the revolving speed of 500rpm, then spin coating 60 seconds under the revolving speed of 2000rpm；Under pure argon environment, it will be revolved in this step
Apply the sample that finishes of insulating layer be placed in heating plate with 80 DEG C heating anneal 2 hours；
B6: the preparation of grid
By the calibration of optical microscopy, keep the channel between the aperture position of stainless steel mask plate and source electrode and drain electrode corresponding,
Recycling vacuum thermal evaporation film plating process, surface prepares the aluminium with a thickness of 60 nanometers as gate electrode on the insulating layer, obtains described
Indium doping N type organic thin-film transistor.
2. preparation method according to claim 1, which is characterized in that in step A2, the high molecular polymer is poly- first
Base acrylate, polystyrene or perfluor (butyl ethylene ether) polymer have at least 90 degree of contact angles with water.
3. preparation method according to claim 1, which is characterized in that in step B1, the insulating substrate is glass, dioxy
SiClx or poly terephthalic acid class plastics.
4. indium doping N type organic thin-film transistor made from a kind of claim 1 the method.
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| CN110767806A (en) * | 2019-10-31 | 2020-02-07 | 西安建筑科技大学 | Organic thin film transistor, preparation method thereof and display device |
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| CN110767806A (en) * | 2019-10-31 | 2020-02-07 | 西安建筑科技大学 | Organic thin film transistor, preparation method thereof and display device |
| CN111157578A (en) * | 2019-12-30 | 2020-05-15 | 电子科技大学 | Nitrogen dioxide sensor based on organic thin film transistor and preparation method thereof |
| CN114078706B (en) * | 2020-08-21 | 2023-09-22 | 天津大学 | Preparation method of silicon nano-film flexible bottom gate transistor |
| CN114078706A (en) * | 2020-08-21 | 2022-02-22 | 天津大学 | Preparation method of silicon nano-film flexible bottom gate transistor |
| CN112349837A (en) * | 2020-10-19 | 2021-02-09 | 华东师范大学 | Organic salt doped P-type organic thin film transistor and preparation method thereof |
| CN112349837B (en) * | 2020-10-19 | 2022-08-16 | 华东师范大学 | Organic salt doped P-type organic thin film transistor and preparation method thereof |
| CN112652717A (en) * | 2020-12-11 | 2021-04-13 | 华南理工大学 | Method for improving carrier mobility of organic thin film transistor device through solvent vapor heat treatment |
| CN113161486A (en) * | 2021-04-07 | 2021-07-23 | 华东师范大学 | P-type organic thin film transistor based on molybdenum trioxide contact doping and preparation method |
| CN113161486B (en) * | 2021-04-07 | 2023-02-17 | 华东师范大学 | P-type organic thin film transistor based on molybdenum trioxide contact doping and preparation method |
| CN113451514A (en) * | 2021-06-10 | 2021-09-28 | 华东师范大学 | Bipolar-improved polymer organic thin film transistor and preparation method thereof |
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