CN112349837A - Organic salt doped P-type organic thin film transistor and preparation method thereof - Google Patents
Organic salt doped P-type organic thin film transistor and preparation method thereof Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- H10K71/10—Deposition of organic active material
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- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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Abstract
The invention discloses an organic salt doped P-type organic thin film transistor and a preparation method thereof. The preparation method comprises the steps of firstly preparing a layer of gold as a source electrode and a drain electrode on a glass substrate through a mask, then preparing a layer of organic salt doped P-type organic semiconductor active layer on a gold electrode by using a sol-gel method, spin-coating a layer of dielectric material on the active layer to serve as an insulating layer, and finally preparing aluminum on the surface of the insulating layer through the mask to form a gate electrode. Compared with the traditional organic thin film transistor, the organic thin film transistor prepared by the method has the advantages that the switching ratio and the carrier mobility are obviously improved, and the threshold voltage and the contact resistance of the device are greatly reduced. The invention improves the electrical property of the P-type organic thin film transistor with the top-gate bottom-contact structure, and has the characteristics of low cost, simple process steps and wide application in the P-type organic thin film transistor.
Description
Technical Field
The invention relates to the fields of microelectronic material and device technology, information display and the like, in particular to an organic salt C32H12BF20An N-doped P-type organic thin film transistor and a preparation method thereof.
Background
The use of organic semiconductors as active layers in thin film transistors has gained widespread interest over the last three decades, and organic thin film transistors with conjugated polymers, oligomers and fused aromatics as the semiconducting material have particular advantages over field effect transistors using inorganic semiconductors, such as the fabrication of new thin film transistors that are large area, flexible, low temperature processing (near room temperature), low cost and transparent. The organic thin film transistor can be applied to the fields of transaction cards, identity recognizers, intelligent cards and the like, complementary logic circuits, organic electroluminescent diodes, attachable sensors, radio frequency identification tags and the like as a memory component of a driving circuit of a flat panel display.
The method for improving the performance parameters of the organic thin film transistor comprises designing and synthesizing a new organic semiconductor, improving the orientation of semiconductor molecules and the crystallinity of a thin film, blending the semiconductor and an insulating polymer, doping and the like. Design and synthesis methods typically require precise setup and accurate control of semiconductor deposition, thus limiting the large-scale application of such methods. Furthermore, there is a limitation in adjusting morphology or phase separation in a film by a method of blending a semiconductor and an insulator, and it has not been widely used to improve performance. Doping is another effective method for improving the performance of the organic thin film transistor, and the method has the advantages of simple process, low cost and wide applicability and attracts the attention of researchers.
Carrier mobility enhancement is also observed in certain chemically doped organic semiconductors internationally by doping to induce the formation of more free charge carriers or the passivation of traps in the organic semiconductor. Doping can, however, at the same time lead to disadvantageous transport of charge in the organic semiconductor, leading to an increase in the current switching ratio or other effects. It is very important to prepare organic thin film transistors with improved performance and switching current ratios that are not sacrificed, but remain unchanged or even become better for their application.
Disclosure of Invention
In view of the above, the present invention provides an organic salt C32H12BF20An N-doped P-type organic thin film transistor and a preparation method thereof. The organic thin film transistor applicable to the preparation method is of a top-gate-bottom contact structure, and the transistor sequentially comprises a gate electrode, a dielectric layer, a P-type semiconductor active layer, a source/drain electrode and a substrate from top to bottom. According to the method, after the preparation of the source/drain electrode of the organic thin film transistor is finished, the doping layer is formed on the surface of the source/drain electrode in a mask alignment mode, channel doping is achieved on the P-type organic thin film transistor through the doping layer, and the electrical performance of the P-type organic thin film transistor is improved.
The specific technical scheme for realizing the invention is as follows:
organic salt C32H12BF20The preparation method of the N-doped P-type organic thin film transistor comprises the following specific steps of:
step 1: preparation of the solution
A1: doped organic salt C32H12BF20Preparation of semiconductor solution of N
Organic salt C32H12BF20Dissolving N and P type organic semiconductor materials in a solvent according to the mass percent of 1wt%, and then mixing to prepare a semiconductor solution with the mass-volume ratio of 3 mg/ml; wherein the P-type organic semiconductor material is: benzothiadiazole polymers (IDT-BT); the organic solvent is chlorobenzene;
a2: preparation of insulating layer solution
Preparing an insulating layer material and a high-solubility organic solvent according to a mass-volume ratio of 80 mg/ml; wherein, the insulating layer material is high molecular polymer: a polymethacrylate, polystyrene, or perfluoro (1-butyl vinyl ether) polymer having at least 90 degrees contact with water; the high-solubility organic solvent is butyl acetate;
a3: dissolution of the solution
Will be doped with an organic salt C32H12BF20Respectively placing the semiconductor solution and the insulating layer solution of N on a heating plate, standing and dissolving for 24 hours at the temperature of 80 ℃;
step 2: preparation of devices
B1: cleaning of substrates
Selecting an insulating substrate, sequentially placing the substrate in deionized water, acetone and alcohol, respectively cleaning for 10 minutes by using an ultrasonic cleaning machine, and then drying by using a nitrogen gun;
b2: preparation of source-drain electrode
Adopting vacuum thermal evaporation coating technology, and performing vacuum 10-5~10-4Under the condition of Pa, gold with the thickness of 30 nanometers is evaporated on the substrate by using a stainless steel mask as a source drain electrode; wherein the thermal evaporation current is 100-160A, and the speed is 0.01-0.05 nm/s;
b3: preparation of semiconductor thin films
Spreading the prepared semiconductor solution on the upper surface of the substrate by a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm by using a spin coater and then for 40-80 seconds at the rotating speed of 2000 rpm; placing the sample on a heating plate to be heated for 120 minutes at 100 ℃ in a pure argon environment, wherein the semiconductor layer is coated in a spinning mode in the step; the thickness range of the prepared semiconductor film is 35-45 nanometers, and the semiconductor film is an active layer.
B4: preparation of insulating layer film
Spreading the prepared insulating layer solution on the upper surface of the semiconductor film through a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm and then 60 seconds at the rotating speed of 2000rpm by adopting a spin coater; placing the sample with the insulating layer coated in a spinning mode in the step on a heating plate to be heated for 20 hours at 80 ℃ in a pure argon environment;
b6: preparation of grid electrode
And adopting a stainless steel mask plate, enabling the opening position of the stainless steel mask plate to correspond to a channel between the source electrode and the drain electrode through optical microscope calibration, and preparing an aluminum film with the thickness of 60 nanometers on the upper surface of the insulating layer by utilizing a vacuum thermal evaporation coating technology to serve as a gate electrode to obtain the indium-doped N-type organic thin film transistor.
In step A2, the high molecular polymer is polymethacrylate, polystyrene or perfluoro (1-butyl vinyl ether) polymer, and has a contact angle of at least 90 degrees with water.
In step B1, the insulating substrate is glass, silicon dioxide or poly-p-phthalic plastic.
Compared with the traditional organic thin film transistor, the organic thin film transistor prepared by the invention has the advantages that the on-off ratio and the carrier mobility of the device are obviously improved, and the threshold voltage and the contact resistance of the device are greatly reduced. The invention improves the electrical property of the P-type organic thin film transistor with the top-gate bottom-contact structure, and has the characteristics of low cost, simple process steps and wide application in the P-type organic thin film transistor.
Drawings
FIG. 1 is a schematic cross-sectional structure of a P-type organic thin film transistor of a comparative example;
FIG. 2 shows an organic salt C prepared by the method of the present invention32H12BF20The cross-sectional structure schematic diagram of the N-doped P-type organic thin film transistor;
fig. 3 is a graph comparing transfer characteristics of P-type organic thin film transistors manufactured by the method of the comparative example and the method of the present invention.
Detailed Description
The invention is carried out by preparing mixed organic salt C32H12BF20The N and P type semiconductor materials become solution to form charge transfer doping on the semiconductor active layer. Organic salt C32H12BF20The N is used as a dopant with high activity, so that the activation energy of an organic semiconductor is reduced, the charge transfer and injection are increased, and the carrier concentration of a P-type organic semiconductor film is improved, so that the on-off ratio and the mobility of an organic thin film transistor are remarkably improved, and the threshold voltage and the contact resistance of a device are remarkably reduced. Therefore, the invention can greatly improve the electrical property of the P-type organic thin film transistor.
The invention is further explained below with reference to the drawings and the embodiments.
The following description of the preferred embodiments of the present invention is provided for illustration, but should not be construed as limiting the invention to the embodiments set forth herein, and all equivalent changes and modifications that fall within the spirit and scope of the present invention are intended to be embraced therein.
Comparative example
Undoped conventional organic thin film transistor fabrication
A1: preparation of semiconductor solution
Preparing a P-type organic semiconductor material and an organic solvent according to the mass-to-volume ratio of 3 mg/ml; wherein the P-type organic semiconductor material is: benzothiadiazole polymers (IDT-BT); the organic solvent is chlorobenzene;
a2: preparation of insulating layer solution
Preparing an insulating layer material and a high-solubility organic solvent according to a mass-volume ratio of 80 mg/ml; wherein the insulating layer material is Polyethylene (PS); the high-solubility organic solvent is butyl acetate;
a3: dissolution of the solution
Respectively placing the prepared semiconductor solution and the insulating layer solution on a heating plate, standing and dissolving at 80 ℃ for 24 hours;
step 2: preparation of devices
B1: cleaning of substrates
Selecting an insulating substrate, sequentially placing the substrate in deionized water, acetone and alcohol, respectively cleaning for 10 minutes by using an ultrasonic cleaning machine, and then drying by using a nitrogen gun;
b2: preparation of source-drain electrode
Adopts a vacuum thermal evaporation coating technology under the vacuum condition (10)-4Pa) evaporating gold with the thickness of 30 nanometers on the substrate by using a stainless steel mask as a source-drain electrode; wherein the thermal evaporation current is 100-160A, and the speed is 0.01-0.05 nm/s;
b3: preparation of semiconductor thin films
Spreading the prepared semiconductor solution on the upper surface of the substrate by a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm by using a spin coater and then for 40-80 seconds at the rotating speed of 2000 rpm; placing the sample on a heating plate to be heated and annealed for 120 minutes at 100 ℃ in a pure argon environment, wherein the semiconductor layer is coated in a spinning mode in the step; the thickness range of the prepared semiconductor film is 35-45 nanometers, and the semiconductor film is an active layer;
b4: preparation of insulating layer film
Spreading the prepared insulating layer solution on the upper surface of the semiconductor film through a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm and then 60 seconds at the rotating speed of 2000rpm by adopting a spin coater; placing the sample with the insulating layer coated in a spinning way on a heating plate in a pure argon environment, and heating and annealing the sample for 20 hours at 80 ℃;
b5: preparation of grid electrode
And (3) by calibrating an optical microscope, enabling the opening position of the stainless steel mask plate to correspond to a channel between the source electrode and the drain electrode, and preparing aluminum with the thickness of 60 nanometers on the upper surface of the insulating layer by utilizing a vacuum thermal evaporation coating technology to serve as a gate electrode to obtain the traditional P-type organic thin film transistor.
As shown in fig. 1, fig. 1 is a schematic cross-sectional structure of a conventional P-type organic thin film transistor manufactured according to a comparative example.
Examples
A1: doped organic salt C32H12BF20Preparation of semiconductor solution of N
Mixing P-type organic semiconductor material with organic salt C32H12BF20Dissolving N in a solvent at a mass percent of 1wt%, and then mixing to prepare a semiconductor solution with a mass-to-volume ratio of 3 mg/ml; wherein the P-type organic semiconductor material is: benzothiadiazole polymers (IDT-BT); the organic solvent is chlorobenzene;
a2: preparation of insulating layer solution
Preparing an insulating layer material and a high-solubility organic solvent according to a mass-volume ratio of 80 mg/ml; wherein the insulating layer material is Polyethylene (PS); the high-solubility organic solvent is butyl acetate;
a3: dissolution of the solution
Respectively placing the prepared semiconductor solution and the insulating layer solution on a heating plate, standing and dissolving at 80 ℃ for 24 hours;
step 2: preparation of devices
B1: cleaning of substrates
Selecting an insulating substrate, sequentially placing the substrate in deionized water, acetone and alcohol, respectively cleaning for 10 minutes by using an ultrasonic cleaning machine, and then drying by using a nitrogen gun;
b2: preparation of source-drain electrode
Adopts a vacuum thermal evaporation coating technology under the vacuum condition (10)-4Pa) evaporating gold with the thickness of 30 nanometers on the substrate by using a stainless steel mask as a source-drain electrode; wherein the thermal evaporation current is 100-160A, and the speed is 0.01-0.05 nm/s;
b3: preparation of semiconductor thin films
Spreading the prepared semiconductor solution on the upper surface of the substrate by a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm by using a spin coater and then for 40-80 seconds at the rotating speed of 2000 rpm; placing the sample on a heating plate to be heated and annealed for 120 minutes at 100 ℃ in a pure argon environment, wherein the semiconductor layer is coated in a spinning mode in the step; the thickness range of the prepared semiconductor film is 35-45 nanometers, and the semiconductor film is an active layer;
b4: preparation of insulating layer film
Spreading the prepared insulating layer solution on the upper surface of the semiconductor film through a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm and then 60 seconds at the rotating speed of 2000rpm by adopting a spin coater; placing the sample with the insulating layer coated in a spinning way on a heating plate in a pure argon environment, and heating and annealing the sample for 20 hours at 80 ℃;
b5: preparation of grid electrode
Through the calibration of an optical microscope, the opening position of the stainless steel mask plate corresponds to a channel between the source electrode and the drain electrode, and aluminum with the thickness of 60 nanometers is prepared on the upper surface of the insulating layer by utilizing the vacuum thermal evaporation coating technology to be used as a gate electrode, so that the organic salt C is obtained32H12BF20An N-doped P-type organic thin film transistor;
as shown in FIG. 2, FIG. 2 shows organic salt C prepared in this example32H12BF20The cross-sectional structure schematic diagram of the N-doped P-type organic thin film transistor;
FIG. 3 is a graph comparing the transfer characteristics in the saturation region of the organic thin film transistors obtained in the comparative example and the example. Referring to fig. 3, the transistor prepared according to the embodiment has a greatly improved saturation region transfer characteristic. To account for the changes in specific electrical parameters, table 1 lists the electrical parameters of the switching ratio, mobility, subthreshold swing, and threshold voltage of the two devices. For an undoped conventional organic thin film transistor, the switching ratio is 8 × 104The mobility was 1.01 square centimeter/(volt · s), and the contact resistance was 6 × 105Ohmic, threshold voltage of-37.05V, and switching ratio of 1.6X 10 for the doped organic thin film transistor5The mobility was 4.00 square centimeter/(volt · s), and the contact resistance was 2 × 105Ohmic, threshold voltage was-15.86 volts. Therefore, the core electrical parameter indexes of the four transistors can be observed, the electrical performance of the P-type organic thin film transistor prepared by the method is obviously improved, and the method has very important significance for further development of the P-type organic thin film transistor.
Doped organic salt C32H12BF20N creates a favorable charge injection in the P-type organic semiconductor and fills the tail band of the organic semiconductor, thereby passivating traps and increasing carrier mobility are the primary reasons driving the optimization of transistor performance. In fact, there is a shortage of P-type semiconductor materials with high mobility, air stability, and solution-fabricable, and the performance of undoped traditional P-type organic thin film transistors is significantly behind that of inorganic thin film transistors, which greatly limits the development of organic thin film transistor-based flexible electronic devices and organic integrated circuits. The P-type organic thin film transistor doped by the method has the advantages that the activation energy of the organic semiconductor is reduced, so that the contact resistance is reduced, and the mobility is improved; with organic salts C32H12BF20N has the function of hole injection, thereby increasing the carrier concentration in the channel and reducing the influence of the electron injectionThe trap is changed, the threshold voltage is reduced, the switching ratio is increased, and the electrical performance of the P-type organic thin film transistor is remarkably improved. Referring to table 1, it can be seen that the carrier mobility of the transistor switch prepared by the present invention is improved to 4 times that of the conventional device compared to 2 times that of the device prepared by the conventional method, and the threshold voltage and the contact resistance thereof are both significantly reduced.
Therefore, the invention can greatly improve the electrical property of the P-type organic thin film transistor and has very important significance for realizing large-scale commercial application of the organic thin film transistor.
TABLE 1
Claims (3)
1. A preparation method of an organic salt doped P-type organic thin film transistor is characterized by comprising the following specific steps:
step 1: preparation of the solution
A1: doped organic salt C32H12BF20Preparation of semiconductor solution of N
Organic salt C32H12BF20Dissolving N and P type organic semiconductor materials in an organic solvent by the mass percent of 1wt%, and then mixing to prepare a semiconductor solution with the mass-volume ratio of 3 mg/ml; wherein the P-type organic semiconductor material is: benzothiadiazole polymers (IDT-BT); the organic solvent is chlorobenzene;
a2: preparation of insulating layer solution
Preparing an insulating layer material and a high-solubility organic solvent according to a mass-volume ratio of 80 mg/ml; wherein, the insulating layer material is high molecular polymer: a polymethacrylate, polystyrene, or perfluoro (1-butyl vinyl ether) polymer having at least 90 degrees contact with water; the high-solubility organic solvent is butyl acetate;
a3: dissolution of the solution
Will be doped with an organic salt C32H12BF20Respectively placing the semiconductor solution and the insulating layer solution of N on a heating plate, standing and dissolving for 24 hours at the temperature of 80 ℃;
step 2: preparation of devices
B1: cleaning of substrates
Selecting an insulating substrate, sequentially placing the substrate in deionized water, acetone and alcohol, respectively cleaning for 10 minutes by using an ultrasonic cleaning machine, and then drying by using a nitrogen gun;
b2: preparation of source-drain electrode
Adopting vacuum thermal evaporation coating technology, and performing vacuum 10-5~10-4Under the condition of Pa, gold with the thickness of 30 nanometers is evaporated on the substrate by using a stainless steel mask as a source drain electrode; wherein the thermal evaporation current is 100-160A, and the speed is 0.01-0.05 nm/s;
b3: preparation of semiconductor thin films
Spreading the prepared semiconductor solution on the upper surface of the substrate by a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm by using a spin coater and then for 40-80 seconds at the rotating speed of 2000 rpm; placing the sample on a heating plate to be heated for 120 minutes at 100 ℃ in a pure argon environment, wherein the semiconductor layer is coated in a spinning mode in the step; the thickness range of the prepared semiconductor film is 35-45 nanometers, and the semiconductor film is an active layer;
b4: preparation of insulating layer film
Spreading the prepared insulating layer solution on the upper surface of the semiconductor film through a liquid transfer gun, and homogenizing for 5 seconds at the rotating speed of 500rpm and then 60 seconds at the rotating speed of 2000rpm by adopting a spin coater; placing the sample with the insulating layer coated in a spinning mode in the step on a heating plate to be heated for 20 hours at 80 ℃ in a pure argon environment;
b5: preparation of grid electrode
Adopting a stainless steel mask plate, enabling the opening position of the stainless steel mask plate to correspond to a channel between a source electrode and a drain electrode through optical microscope calibration, preparing an aluminum film with the thickness of 60 nanometers on the upper surface of an insulating layer by utilizing a vacuum thermal evaporation coating technology to serve as a gate electrode, and obtaining the organic salt C32H12BF20And N-doped P-type organic thin film transistor.
2. The method according to claim 1, wherein in step B1, the insulating substrate is glass, silicon dioxide or poly-p-phthalic plastic.
3. An organic salt C obtainable by the process of claim 132H12BF20And N-doped P-type organic thin film transistor.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451514A (en) * | 2021-06-10 | 2021-09-28 | 华东师范大学 | Bipolar-improved polymer organic thin film transistor and preparation method thereof |
| CN115389891A (en) * | 2022-07-26 | 2022-11-25 | 安庆师范大学 | Method for detecting electrical transport band gap in molecular semiconductor material |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012090913A1 (en) * | 2010-12-27 | 2012-07-05 | 住友化学株式会社 | Method for producing organic transistors |
| CN108288672A (en) * | 2018-01-16 | 2018-07-17 | 华东师范大学 | A kind of preparation method of Organic Thin Film Transistors |
| CN110098329A (en) * | 2019-05-06 | 2019-08-06 | 上海交通大学 | Organic Thin Film Transistors and preparation method thereof |
| CN110265548A (en) * | 2019-06-04 | 2019-09-20 | 华东师范大学 | A kind of indium doping N type organic thin-film transistor and preparation method thereof |
| KR20190139464A (en) * | 2018-06-08 | 2019-12-18 | 재단법인 나노기반소프트일렉트로닉스연구단 | Method for preparing organic semiconductor film using bar-coating method, and flexible organic semiconductor transistor comprising the same |
| CN111373841A (en) * | 2017-11-20 | 2020-07-03 | 日立化成株式会社 | Method for producing organic thin film, and use thereof |
-
2020
- 2020-10-19 CN CN202011115690.7A patent/CN112349837B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012090913A1 (en) * | 2010-12-27 | 2012-07-05 | 住友化学株式会社 | Method for producing organic transistors |
| CN111373841A (en) * | 2017-11-20 | 2020-07-03 | 日立化成株式会社 | Method for producing organic thin film, and use thereof |
| CN108288672A (en) * | 2018-01-16 | 2018-07-17 | 华东师范大学 | A kind of preparation method of Organic Thin Film Transistors |
| KR20190139464A (en) * | 2018-06-08 | 2019-12-18 | 재단법인 나노기반소프트일렉트로닉스연구단 | Method for preparing organic semiconductor film using bar-coating method, and flexible organic semiconductor transistor comprising the same |
| CN110098329A (en) * | 2019-05-06 | 2019-08-06 | 上海交通大学 | Organic Thin Film Transistors and preparation method thereof |
| CN110265548A (en) * | 2019-06-04 | 2019-09-20 | 华东师范大学 | A kind of indium doping N type organic thin-film transistor and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451514A (en) * | 2021-06-10 | 2021-09-28 | 华东师范大学 | Bipolar-improved polymer organic thin film transistor and preparation method thereof |
| CN113451514B (en) * | 2021-06-10 | 2022-10-04 | 华东师范大学 | Bipolar-improved polymer organic thin film transistor and preparation method thereof |
| CN115389891A (en) * | 2022-07-26 | 2022-11-25 | 安庆师范大学 | Method for detecting electrical transport band gap in molecular semiconductor material |
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