CN108931322A - A kind of hypersensitive field effect type touch sensor and its application in terms of micro-dimension object detection - Google Patents
A kind of hypersensitive field effect type touch sensor and its application in terms of micro-dimension object detection Download PDFInfo
- Publication number
- CN108931322A CN108931322A CN201710372703.0A CN201710372703A CN108931322A CN 108931322 A CN108931322 A CN 108931322A CN 201710372703 A CN201710372703 A CN 201710372703A CN 108931322 A CN108931322 A CN 108931322A
- Authority
- CN
- China
- Prior art keywords
- field effect
- touch sensor
- hypersensitive
- effect type
- type touch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 47
- 206010020751 Hypersensitivity Diseases 0.000 title claims abstract description 25
- 238000001514 detection method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000523 sample Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 35
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 29
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 29
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 29
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 29
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 25
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 16
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 15
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- -1 phthalocyanine ketone Chemical class 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 9
- 238000004891 communication Methods 0.000 description 7
- 239000002127 nanobelt Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000003032 molecular docking Methods 0.000 description 5
- 230000000638 stimulation Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005090 crystal field Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 241001365789 Oenanthe crocata Species 0.000 description 1
- 208000026935 allergic disease Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009610 hypersensitivity Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000004215 skin function Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V3/00—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation
- G01V3/02—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation operating with propagation of electric current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Geology (AREA)
- Remote Sensing (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geophysics (AREA)
- Thin Film Transistor (AREA)
Abstract
Detection the invention discloses a kind of preparation method of hypersensitive field effect type touch sensor and its to micro-dimension object.The hypersensitive field effect type touch sensor, including substrate, grid, insulating layer, semiconductor layer (sensing layer) and source-drain electrode, wherein the sensing layer is organic micro-nano monocrystalline.The present invention is sensing layer using semiconductor layer most sensitive in field effect transistor, the quality detection of micro-dimension object is realized in conjunction with the amplification of grid, it, which detects minimum, can reach nanogram magnitude, it also achieves simultaneously to the identification not in contact with object, including close atomic force probe needle point and human finger.The touch sensor has the sensitivity and stability of superelevation, and power consumption is lower.
Description
Technical field
The invention belongs to field of sensing technologies, and in particular to a kind of hypersensitive field effect type touch sensor and its in micro- ruler
Application in terms of very little object detection.
Background technique
It is well known that skin is the perceptual organ of human maximum, can accurately know extraneous pressure, pain, temperature with
And the stimulation of other complex environments.In recent years, researchers' discovery can use the perception of electrical signal simulation human skin
Function realizes " electronic skin ", this will generate revolutionary variation (Science to fields such as medical treatment, artificial intelligence, wearable electronics
2015,305,313；Advance Material 2015,27,6055；Advance Electronic Material 2015,
1,1500142；Nature Communication 2014,5,4496).For example, making artificial limb that there is picture in terms of artificial artificial limb
The same feeling function of people (Nature Communication 2014,5,5747)；In terms of artificial intelligence robot, help
Ambient condition information is accurately known in robot, it is ensured that its safety and usability (Nature Communication 2015,6,
8356)；In terms of health monitoring, the indexs such as real-time tracking pulse, heart rate are to carry out Clinics and Practices (Advance Material
2014,26,1336；Nature Communication 2014,5,3329).However, realizing the weight of these huge applications prospects
Premise is wanted, is to need to construct overdelicate touch sensor, " electronic skin " can be made accurately to perceive environmental stimuli.
In the development of the past few decades, extensive hair is had been obtained in the touch sensor based on different transmission mechanisms
Exhibition, including the types such as pressure drag, capacitor and piezoelectricity.However, the most of touch sensors reported before can only perceive macro-size
Object, quality such as can perceive the placement and shifting of an ant (10mg) or a petal (8mg) in the range of milligram
Except (Advance Material 2014,26,1336；Nature Communication 2014,5,3002).Although many classes
Topic group is dedicated to promoting the sensing capability of sensor, makes it have higher resolving power, but due to lack novel material and
Reasonable device configurations, only several touch sensors can be realized the detection of ultralow quality or pressure.It is one of feasible
Method is that conductive carbon nanotube is mixed into elastomer to be built into patterned structure, by connecing under environmental stimuli
Electric shock resistance variation realize tactilely-perceptible ability, and its detect minimum be down to 0.2-0.6Pa (Acs Nano 2014,5,
4689；Advance Material 2014,26,1336).Another feasible method be by semiconductor sensing design of material at
Unique microstructural configuration, such as hollow or layered structure, can detect the weight of a drop water, and detection limitation reaches 0.1-
0.8Pa (Advance Function Material 2015,25,2841；Nature Communication 2014,5,
3002).But due to being limited by elastomer and microstructural configuration, halt the development of hypersensitive touch sensor always
Before not.Up to date, this academician of the primary track of Institute of Chemistry, Academia Sinica seminar achieves breakthrough in this respect,
They are based on the structure that polyimides (PI) substrate is prepared for a kind of suspension gate electrode, i.e., using air as the organic film of insulating layer
Field effect transistor.When device is by slight pressure or vibration, gate electrode will deformation occurs, and then leads to capacitive dielectric layer
It changes, realizes the detection of slight pressure signal, can effectively detect the weight of the 0.3mg scraps of paper, this is to report at present
Most sensitive organic effect type sensor paper (Nature Communication 2015,6,6269).In addition, passing
The touch sensor of system can only perceive the object of contact, and which greatly limits it in safety precautions and non-invasive medical diagnosis
Practical application.Although proximity sensor is already used to detect non-contacting object, not yet it is any report be about
Micro-dimension object close to detection.Therefore, it is necessary to design a kind of preparation method of new touch sensor, allow to accurately
Perceive micro-dimension object approaching and contact with stimulation.
Summary of the invention
The object of the present invention is to provide a kind of hypersensitive field effect type touch sensors and preparation method thereof.It is imitated using field
Organic single-crystal in transistor is answered to act directly on environmental stimuli on most sensitive conducting channel as sensing layer and realize to micro-
Detection of the size objects approaching and contact with stimulation.
Hypersensitive field effect type touch sensor provided by the present invention, including substrate, grid, insulating layer, semiconductor layer
(sensing layer) and source-drain electrode, wherein the material of the semiconductor layer is organic micro-nano monocrystalline.
Organic micro-nano monocrystalline concretely rubrene monocrystalline, pentacene monocrystalline or phthalocyanine ketone monocrystalline etc..
The hypersensitive field effect type touch sensor can be bottom gate roof construction or bottom gate bottom structure.
When touch sensor is bottom gate roof construction, from top to bottom successively including substrate, grid, insulating layer, semiconductor layer
(sensing layer) and source-drain electrode.
When touch sensor is bottom gate bottom structure, from top to bottom successively including substrate, grid, insulating layer, source-drain electrode
With semiconductor layer (sensing layer).
Heretofore described substrate for rigid substrate, flexible substrate or can be bonded substrate；
The rigid substrate concretely silicon or glass；The flexible substrate concretely polyethylene terephthalate
(PET) thin slice；It is described to be bonded substrate concretely PDMS membrane.
Dimethyl silicone polymer (PDMS) film can be prepared in accordance with the following steps：
By PDMS and curing agent (such as DOW CORNING, silicone resin 184) according to volume ratio 10:The ratio of 1-1.5 prepares PDMS
Solution stands 2-5 hours after stirring；One layer 200 microns thick of spin coating of the PDMS film directly on substrate (silicon wafer or glass etc.),
70 degree lower heating 12 hours in baking oven are then placed in, uniform PDMS film is formed.
The material that the present invention constitutes the grid can be selected from silicon or metal simple-substance, concretely silicon or gold.Source electrode and drain electrode
Material can be selected from metal simple-substance, it is concretely golden.
The material for constituting the insulating layer is organic insulating material, specially polymethyl methacrylate (PMMA) or polyphenyl
Ethylene (PS).
The grid with a thickness of 40-80nm (gold) or 430-470 μm (silicon wafer), the insulating layer with a thickness of 300-
500nm, the semiconductor (sensing layer) with a thickness of 50-200nm, the thickness of the source electrode and drain electrode is 40-80nm (gold).
The method provided by the invention for preparing above-mentioned hypersensitive field effect type touch sensor, includes the following steps：
1) grid is prepared on substrate；
2) insulating layer is prepared on grid；
3) semiconductor layer (sensing layer) is prepared on the insulating layer；
4) source-drain electrode is prepared on the semiconductor layer；
Wherein, when the material of the substrate is identical as the material of grid (such as substrate be silicon when, can be directly as grid
Pole), step 1) can be omitted.
In the above method, constitute the grid layer, insulating layer, organic sensing layer, source electrode and drain electrode material with before
It states identical；The grid layer, insulating layer, organic sensing layer, source electrode and drain electrode thickness as hereinbefore.
The material of the grid is metal simple-substance, and the method for preparing the grid can be vacuum vapour deposition.Prepare the leakage
The method of source electrode is gold plaque pad pasting electrode method or vacuum vapour deposition.The method of the semiconductor (sensing layer) is prepared as machinery
The method or sedimentation of probe transfer.
The method for preparing the insulating layer can be spin-coating method, sputtering, vacuum deposition etc..
Insulating layer is prepared by taking spin-coating method as an example：By organic insulating material polymethyl methacrylate (PMMA) or polystyrene
(PS) etc., dropwise addition then carries out spin coating, spin speed 3000-5000r/min on the substrate cleaned up, and spin-coating time is
10-60s is then placed on 70-120 DEG C of baking platform and dries 10-30min.
In the above method, needed before use using rigidity or flexible substrate by following processing：It places the substrate into acetone
Ultrasonic 15-30min takes out with being dried with nitrogen, is then rinsed with deionized water, then with being dried with nitrogen.
Application of the above-mentioned hypersensitive field effect type touch sensor in detection micro-dimension object also belongs to guarantor of the invention
Protect range.The detection includes close to detection and/or contact detection.
" micro-dimension object " of the present invention refers to that human eye is difficult to the size differentiated i.e. millimeter object below.
The present invention test different micro-dimension objects to organic single-crystal field effect type touch sensor approaching and contact with
Stimulation, and obtain current-responsive curve.
When testing close to mode, distance when human finger is close to organic single-crystal between the two is 1-2cm, far from when two
Distance is 5cm or more between person.
Needle point is only tens nanometers at a distance from sample when atomic force probe inserting needle, and when withdraw of the needle is fixed as at a distance from sample
1mm。
In contact mode test, " micro-dimension PDMS film " is selected to be tested.
The preparation method of the micro-dimension PDMS film is as follows：
By PDMS and curing agent (such as DOW CORNING, silicone resin 184) according to volume ratio 10:1 ratio prepares PDMS solution,
Then 10min or so will be stirred, 2h is stood, the PDMS solution after standing is put into the solution of n-hexane and dilutes 10 times, stirring
And spin coating, spin speed 6000r/min, spin-coating time 60s, with a thickness of 5 μ are carried out after standing the bubble in PDMS to be removed
m；The good sample of spin coating is put into baking oven and toasts 12h, temperature is 70 DEG C；The PDMS film being cured is cut out using mechanical probes
At micron order size, it is transferred on organic single-crystal by probe as force application object.According to formula (quality=density × body
Product, density is it is known that measure the volume of external object by microscope) calculate the external object effective mass being applied on monocrystalline
Size.
The invention has the advantages that：
The present invention acts directly on pressure most using semiconductor layer in organic single-crystal field effect transistor as sensing layer
To open a kind of new approaches for realizing hypersensitive touch sensor on sensitive conducting channel.Using in field effect transistor
Most sensitive semiconductor layer is sensing layer, and the quality detection of micro-dimension object is realized in conjunction with the amplification of grid,
Detection minimum can reach nanogram magnitude, while also achieve to the identification not in contact with object, including close atomic force probe
Needle point and human finger.The touch sensor has the sensitivity and stability of superelevation, and power consumption is lower.Using monocrystalline as biography
Sense layer is advantageously implemented lower operating voltage；Due to crystallinity high in monocrystalline and lower thickness, it is conducive to detect faint pressure
The variation of force signal obtains hypersensitivity；There is no crystal boundary in monocrystalline, is more conducive to probe into sensor mechanism.
Detailed description of the invention
Fig. 1 is prepared by the present invention using rubrene monocrystalline as the structural schematic diagram of the field effect type touch sensor of sensing layer
(Fig. 1 (a)) and microscope figure (Fig. 1 (b)).
Fig. 2 is the photo figure of external flexible field effect type touch sensor prepared by the embodiment of the present invention 4.
Fig. 3 is docking by the field effect type touch sensor of sensing layer of rubrene monocrystalline for the preparation of the embodiment of the present invention 4
The photo figure (Fig. 3 (a)) and dynamic response current graph (Fig. 3 (b)) of close human finger's haptic response.
Fig. 4 is docking by the field effect type touch sensor of sensing layer of rubrene monocrystalline for the preparation of the embodiment of the present invention 4
The photo figure (Fig. 4 (a)) and dynamic response current graph (Fig. 4 (b)) of close atomic force probe needle point haptic response.
Fig. 5 is docking by the field effect type touch sensor of sensing layer of rubrene monocrystalline for the preparation of the embodiment of the present invention 5
The microscope figure (Fig. 5 (a)) and transfer curve figure (Fig. 5 (b)) of the haptic response of a piece of micro-dimension PDMS film of touching.
Fig. 6 is docking by the field effect type touch sensor of sensing layer of rubrene monocrystalline for the preparation of the embodiment of the present invention 5
The microscope figure (Fig. 6 (a)) and transfer curve figure (Fig. 6 (b)) of the haptic response of the continuous multi-disc micro-dimension PDMS film of touching.
Fig. 7 is docking by the field effect type touch sensor of sensing layer of rubrene monocrystalline for the preparation of the embodiment of the present invention 5
The microscope figure (Fig. 7 (a)) and transfer characteristic curve figure (Fig. 7 (b)) of the haptic response of the hair of touching.
Specific embodiment
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
Following embodiments illustrate hypersensitive field effect type tactile sensing of the present invention by taking P-type semiconductor rubrene monocrystalline as an example
The preparation of device, and to close finger, atomic force needle point, the current-responsive situation of the PDMS film of contact, hair.
" ultra-thin rubrene single crystal nano-belt " as used in the following examples is according to the method recorded in following files
It is prepared：Advance Electronic Material 2015,1500239.
Embodiment 1, using rubrene monocrystalline as the preparation of the rigid field effect type touch sensor of sensing layer
1, silicon wafer (430 μm of thickness) is put into ultrasound 15min in acetone, takes out with being dried with nitrogen, then uses deionized water
It rinses, then with being dried with nitrogen；
2, mass-volume concentration is prepared by solvent of methyl phenyl ethers anisole is 6% (6g/100ml) PMMA solution, and having prepared
PMMA solution be added drop-wise on the silicon wafer cleaned up, carry out spin coating (spin speed 4000r/min, when spin coating with sol evenning machine
Between be 40s), drying 10min is then placed on 100 DEG C of bakings platforms, the solvent in PMMA is made to volatilize rapidly, it is final available
The PMMA insulating layer of 300nm thickness, capacitance are~10nF；
3, ultra-thin (with a thickness of 112nm) rubrene single crystal nano-belt is shifted using probe by the method for mechanical transfer
Onto the insulating layer prepared；
4, the source-drain electrode (thickness 80nm) of field effect transistor is prepared using the method for gold plaque pad pasting electrode.
Embodiment 2, using rubrene monocrystalline as the preparation of the flexible field effect type touch sensor of sensing layer
1, flexible PET thin slice (with a thickness of 0.1mm) is put into ultrasound 15min in acetone, takes out with being dried with nitrogen, then uses
Deionized water is rinsed, then with being dried with nitrogen；
2, evaporation metal electrode：Use the golden film of coating machine exposure mask vapor deposition 40nm on flexible PET substrate as grid；
3, mass-volume concentration is prepared by solvent of methyl phenyl ethers anisole is 6% (6g/100ml) PMMA solution, and having prepared
PMMA solution be added drop-wise in the golden film cleaned up, carry out spin coating (spin speed 4000r/min, when spin coating with sol evenning machine
Between be 40s), drying 10min is then placed on 100 DEG C of bakings platforms, the solvent in PMMA is made to volatilize rapidly, it is final available
The insulating layer of 300nm thickness, capacitance are~10nF；
4, the rubrene single crystal nano-belt of ultra-thin (with a thickness of 148nm) is shifted using probe by the method for mechanical transfer
Onto the insulating layer prepared；
5, exposure mask is made on nanobelt using the method that golden film is bonded, need to guarantee that the nanobelt as conducting channel is complete
It is covered entirely by exposure mask.It is placed in parallel two panels golden film on nanobelt both sides, distinguishes source-drain electrode；
6, source-drain electrode of the vacuum deposition 40nm golden film as field effect transistor on the substrate for carry out exposure mask.
7, exposure mask (golden film) is removed using mechanical probes method, conducting channel is completely exposed.
Embodiment 3, using rubrene monocrystalline as the preparation for being bonded field effect type touch sensor of sensing layer
1, according to PDMS and curing agent (DOW CORNING, silicone resin 184) 10:1 ratio prepares PDMS solution, quiet after stirring
It sets 2 hours；One layer of 200 microns of PDMS film of spin coating directly on substrate (silicon wafer) are then placed in baking oven and heat 70 degree of solidifications 12
Hour, form uniform PDMS film；
2, evaporation metal electrode：Use coating machine that the golden film of 40nm is deposited on PDMS substrate as grid；
3, mass-volume concentration is prepared by solvent of methyl phenyl ethers anisole is 6% (6g/100ml) PMMA solution, and having prepared
PMMA solution be added drop-wise on PDMS substrate, carrying out spin coating with sol evenning machine, (spin speed 4000r/min, spin-coating time are
40s), drying 10min is then placed on 100 DEG C of baking platforms, the solvent in PMMA is made to volatilize rapidly, and finally available 300nm is thick
Insulating layer, capacitance be~10nF；
4, the rubrene single crystal nano-belt of ultra-thin (with a thickness of 136nm) is shifted using probe by the method for mechanical transfer
Onto the insulating layer prepared；
5, the source-drain electrode of field effect transistor is prepared using the method for gold plaque pad pasting electrode.
Using rubrene single crystal semiconductor as the structural schematic diagram (Fig. 1 (a)) of the field effect type touch sensor of sensing layer and
Microscope figure (Fig. 1 (b)).
Embodiment 4, flexible touch sensation sensor real-time testing micro-dimension object close to stimulation
1, the preparation of external flexible field effect transistor touch sensor：
Source electrode, drain and gate in flexible field effect type touch sensor in embodiment 2 is inserted directly into PCB (print
Circuit board processed) on slot in, realize the external connection of device.The electrode inside slot on PCB is the metal clips of protrusion,
In flexible electrode insertion, raised sheet metal has the process of an extruding to guarantee interelectrode contact quality at electrode.For
In insertion process from damage, two-sided copper-foil conducting electricity is incorporated by between gold electrode and slot metal clips guarantee gold electrode
Transition zone.The sheet metal of slot protrusion keeps contact of the copper foil with gold electrode more preferable the extruding of copper foil, simultaneously because copper-foil conducting electricity
Protection make gold electrode damage reduce.Fig. 2 is the pictorial diagram of the external flexible field effect transistor touch sensor prepared.
2, the device that will be connected is placed and is tested on clean smooth sample stage.Human finger is close to rubrene list
Brilliant touch sensor has a height of about 1-2cm, real-time testing finger close to and withdraw the influence to device current signal.
Photo figure and current responsing signal curve graph when Fig. 3 (a) and Fig. 3 (b) respectively indicate test.This result shows that, system of the present invention
Standby touch sensor use organic single-crystal as sensing layer can effectively detect finger close to situation.
3, the device that will be connected is placed on atomic force microscope sample stage and is tested.Select intelligent mode control
The distance between probe tip and rubrene monocrystalline, real-time testing needle point approach and exit the influence to current signal.Inserting needle
Needle point only has tens nanometers at a distance from monocrystalline afterwards, and infinite approach monocrystalline, tip-sample distance remains 1mm after the withdraw of the needle.Fig. 4
(a) and Fig. 4 (b) be respectively probe effect under photo figure and current-responsive curve.The above results show touching prepared by the present invention
Feel sensor can there was only more than ten nanometers with exploratory probe needle point, diameter maximum value as small items, sensitivity level is
It has been more than the function of most of electronic skins.
Field effect type touch sensor prepared by embodiment 1,3 equally be can achieve into above-mentioned test effect.
Embodiment 5, the contact stimulus that micro-dimension object is tested with sensor
It is illustrated by taking flexible field effect type touch sensor prepared by embodiment 2 as an example below
1, the ultralight PDMS film (nanogram magnitude) prepared is transferred on organic single-crystal by mechanical probes.In order to exclude
The influence of source-drain electrode and semiconductor contact quality, a piece of micro-dimension PDMS film are diverted only on organic single-crystal without covering source
Drain electrode tests current-responsive situation.Fig. 5 (a) and Fig. 5 (b) be respectively device optical microscope figure under a piece of PDMS film and
Transfer curve figure.
2, on the PDMS film to rubrene monocrystalline for continuously placing 4 micro-dimensions, the transfer characteristic under every film is tested respectively
Curve.Fig. 6 (a) and Fig. 6 (b) is respectively device optical microscope figure and transfer curve figure under 4 PDMS films.It can be according to application
The effective area of PDMS film on monocrystalline calculates the size of corrresponding quality.
3, the hair for being cut into micro-dimension is transferred on organic single-crystal, tests transfer characteristic curve.Fig. 7 (a) and Fig. 7
It (b) is respectively device optical microscope figure and transfer curve figure under hair effect.The above results show prepared by the present invention
Touch sensor can detect human hair's object light in this way, and sensitivity level has been over the skin of the mankind.
Field effect type touch sensor prepared by embodiment 1,3 equally can achieve above-mentioned test effect.
In the description of this specification, it is to be understood that reference term " one embodiment ", " is shown " some embodiments "
The description of example ", " specific example " or " some examples " etc. mean specific features described in conjunction with this embodiment or example, structure,
Material or feature are included at least one embodiment or example of the invention.In the present specification, above-mentioned term is shown
The statement of meaning property is necessarily directed to identical embodiment or example.Moreover, specific features, structure, material or the spy of description
Point may be combined in any suitable manner in any one or more of the embodiments or examples.In addition, without conflicting with each other,
Those skilled in the art can be by different embodiments or examples described in this specification and different embodiments or examples
Feature is combined.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of hypersensitive field effect type touch sensor, including substrate, grid, insulating layer, semiconductor layer and source-drain electrode,
It is characterized in that：The material for constituting the semiconductor layer is organic micro-nano monocrystalline.
2. hypersensitive field effect type touch sensor according to claim 1, it is characterised in that：Organic micro-nano monocrystalline
For rubrene monocrystalline, pentacene monocrystalline or phthalocyanine ketone monocrystalline.
3. hypersensitive field effect type touch sensor according to claim 1 or 2, it is characterised in that：
The hypersensitive field effect type touch sensor is bottom grating structure, from top to bottom successively includes substrate, grid, insulation
Layer, semiconductor layer and source-drain electrode.
4. hypersensitive field effect type touch sensor according to claim 1-3, it is characterised in that：The substrate
For rigid substrate, flexible substrate or substrate can be bonded；
The rigid substrate is specially silicon or glass；The flexible substrate is specially PET；The substrate that is bonded is specially
PDMS film；
The material for constituting the grid is selected from silicon or metal simple-substance, specially silicon or gold；
The material for constituting the source electrode and drain electrode is selected from metal simple-substance, specially golden；
The material for constituting the insulating layer is organic insulating material, specially polymethyl methacrylate or polystyrene.
5. hypersensitive field effect type touch sensor according to claim 1-4, it is characterised in that：, described exhausted
Edge layer with a thickness of 300-500nm, the semiconductor layer with a thickness of 50-200nm；The thickness of the source electrode and drain electrode is
40-80nm；
The material of the grid is silicon, with a thickness of 430-470 μm；The material of the grid is metal simple-substance, with a thickness of 40-
80nm。
6. a kind of method for preparing any one of claim 1-5 hypersensitive field effect type touch sensor, including following steps
Suddenly：
1) grid is prepared on substrate；
2) insulating layer is prepared on grid；
3) semiconductor layer is prepared on the insulating layer；
4) source-drain electrode is prepared on the semiconductor layer；
Wherein, the material of the substrate and the material of grid are identical, omit step 1).
7. according to the method described in claim 6, it is characterized in that：The material of the grid is metal simple-substance, prepares the grid
The method of pole is vacuum vapour deposition；The method for preparing the insulating layer is spin-coating method, sputtering method or vacuum deposition method；Described in preparation
The method of semiconductor layer is the method or sedimentation of mechanical probes transfer；The method for preparing the drain-source electrodes is gold plaque pad pasting electricity
Pole method or vacuum vapour deposition.
8. the described in any item hypersensitive field effect type touch sensors of claim 1-5 answering in detection micro-dimension object
With；The detection includes close to detection and/or contact detection.
9. utilizing the side of the described in any item hypersensitive field effect type touch sensor detection micro-dimension objects of claim 1-5
Method, it is characterised in that：The sensing layer of micro-dimension object to be detected and the hypersensitive field effect type touch sensor is approached
Or contact.
10. a kind of for detecting the device of micro-dimension object, including the described in any item hypersensitive field effect types of claim 1-5
Touch sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710372703.0A CN108931322A (en) | 2017-05-24 | 2017-05-24 | A kind of hypersensitive field effect type touch sensor and its application in terms of micro-dimension object detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710372703.0A CN108931322A (en) | 2017-05-24 | 2017-05-24 | A kind of hypersensitive field effect type touch sensor and its application in terms of micro-dimension object detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108931322A true CN108931322A (en) | 2018-12-04 |
Family
ID=64450333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710372703.0A Pending CN108931322A (en) | 2017-05-24 | 2017-05-24 | A kind of hypersensitive field effect type touch sensor and its application in terms of micro-dimension object detection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108931322A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110346837A (en) * | 2019-08-06 | 2019-10-18 | 南京大学 | A kind of flexible capacitive proximity sensor and method for sensing based on capacitor fringing field effect |
| CN110849252A (en) * | 2019-11-14 | 2020-02-28 | 东北师范大学 | Large-area conformable organic semiconductor type proximity sensor and application thereof in detection of object with tiny charges |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000809A (en) * | 2012-12-20 | 2013-03-27 | 东北师范大学 | Method for improving performance of organic field effect transistors |
| CN103490010A (en) * | 2013-09-04 | 2014-01-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Pressure sensor based on micro-structure gate insulation layer and manufacturing method thereof |
| CN105244438A (en) * | 2015-10-13 | 2016-01-13 | 东北师范大学 | Linear organic single crystal field effect transistor capable of being woven and fabrication method and application thereof |
| CN105742347A (en) * | 2016-04-14 | 2016-07-06 | 塔力哈尔·夏依木拉提 | Stable nanowire field effect transistor taking gas as insulation layer and fabrication method of nanowire field effect transistor |
-
2017
- 2017-05-24 CN CN201710372703.0A patent/CN108931322A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000809A (en) * | 2012-12-20 | 2013-03-27 | 东北师范大学 | Method for improving performance of organic field effect transistors |
| CN103490010A (en) * | 2013-09-04 | 2014-01-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Pressure sensor based on micro-structure gate insulation layer and manufacturing method thereof |
| CN105244438A (en) * | 2015-10-13 | 2016-01-13 | 东北师范大学 | Linear organic single crystal field effect transistor capable of being woven and fabrication method and application thereof |
| CN105742347A (en) * | 2016-04-14 | 2016-07-06 | 塔力哈尔·夏依木拉提 | Stable nanowire field effect transistor taking gas as insulation layer and fabrication method of nanowire field effect transistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110346837A (en) * | 2019-08-06 | 2019-10-18 | 南京大学 | A kind of flexible capacitive proximity sensor and method for sensing based on capacitor fringing field effect |
| CN110849252A (en) * | 2019-11-14 | 2020-02-28 | 东北师范大学 | Large-area conformable organic semiconductor type proximity sensor and application thereof in detection of object with tiny charges |
| CN110849252B (en) * | 2019-11-14 | 2021-06-18 | 东北师范大学 | Method for preparing large-area conformable semiconductor type proximity sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hua et al. | Skin-inspired highly stretchable and conformable matrix networks for multifunctional sensing | |
| Palaniappan et al. | Laser-assisted fabrication of a highly sensitive and flexible micro pyramid-structured pressure sensor for E-skin applications | |
| Zhuo et al. | High sensitivity flexible capacitive pressure sensor using polydimethylsiloxane elastomer dielectric layer micro-structured by 3-D printed mold | |
| Pu et al. | Human skin-inspired electronic sensor skin with electromagnetic interference shielding for the sensation and protection of wearable electronics | |
| EP3402393B1 (en) | Paper based electronics platform | |
| Shi et al. | Self-powered wireless smart patch for healthcare monitoring | |
| Luo et al. | Microconformal electrode-dielectric integration for flexible ultrasensitive robotic tactile sensing | |
| Zhang et al. | Localizing strain via micro-cage structure for stretchable pressure sensor arrays with ultralow spatial crosstalk | |
| CN105708425A (en) | Development of flexible resistance type pressure transducer capable of being applied to human body pulse detection | |
| Guo et al. | Self-powered digital-analog hybrid electronic skin for noncontact displacement sensing | |
| Palaniappan et al. | Flexible M-tooth hybrid micro-structure-based capacitive pressure sensor with high sensitivity and wide sensing range | |
| CN111998965A (en) | Double-electrode type flexible sensor capable of simultaneously detecting and distinguishing temperature and pressure as well as preparation method and application thereof | |
| Su et al. | Highly sensitive ionic pressure sensor based on concave meniscus for electronic skin | |
| CN108303145A (en) | A kind of single electrode transparent flexible electronic skin and preparation method thereof | |
| Hussin et al. | Recent progress in the diversity of inkjet-printed flexible sensor structures in biomedical engineering applications | |
| Wang et al. | Wearable human-machine interface based on the self-healing strain sensors array for control interface of unmanned aerial vehicle | |
| Luo et al. | Gecko-inspired slant hierarchical microstructure-based ultrasensitive iontronic pressure sensor for intelligent interaction | |
| Xu et al. | High-performance strain sensor for detection of human motion and subtle strain by facile fabrication | |
| CN108931322A (en) | A kind of hypersensitive field effect type touch sensor and its application in terms of micro-dimension object detection | |
| Zou et al. | Highly sensitive ionic pressure sensor with broad sensing range based on interlaced ridge-like microstructure | |
| Li et al. | Self-powered and high sensitivity ionic skins by using versatile organogel | |
| Nguyen et al. | Transparent stretchable capacitive touch sensor grid using ionic liquid electrodes | |
| Wang et al. | A highly stretchable triboelectric nanogenerator with both stretch-insensitive sensing and stretch-sensitive sensing | |
| CN105897035B (en) | Stretchable frictional energy collecting device and preparation method thereof | |
| Cho et al. | Self-powered hybrid triboelectric–piezoelectric electronic skin based on P (VDF-TrFE) electrospun nanofibers for artificial sensory system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181204 |