CN103490010A - Pressure sensor based on micro-structure gate insulation layer and manufacturing method thereof - Google Patents
Pressure sensor based on micro-structure gate insulation layer and manufacturing method thereof Download PDFInfo
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- 238000009413 insulation Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 150000001875 compounds Chemical class 0.000 claims abstract description 27
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 26
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract description 26
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 26
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 53
- 238000002360 preparation method Methods 0.000 claims description 27
- 238000007639 printing Methods 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000000443 aerosol Substances 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 11
- KJOLVZJFMDVPGB-UHFFFAOYSA-N perylenediimide Chemical class C=12C3=CC=C(C(NC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)NC(=O)C4=CC=C3C1=C42 KJOLVZJFMDVPGB-UHFFFAOYSA-N 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 150000002964 pentacenes Chemical class 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 229920000123 polythiophene Polymers 0.000 claims description 8
- 238000007641 inkjet printing Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 150000004032 porphyrins Chemical class 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 229930192474 thiophene Natural products 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 229920003240 metallophthalocyanine polymer Polymers 0.000 claims description 2
- 150000003577 thiophenes Chemical class 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 abstract description 3
- 230000003381 solubilizing effect Effects 0.000 abstract 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 19
- 239000005020 polyethylene terephthalate Substances 0.000 description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 8
- 239000004926 polymethyl methacrylate Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- -1 phthalocyanine compound Chemical class 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 150000002220 fluorenes Chemical class 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007664 blowing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- DGWSNUKQRDJSLY-UHFFFAOYSA-N C(C)C1=C(C=2C=C3C(=C(C(=CC=4C(=C(C(=CC5=C(C(=C(N5)C=C1N2)CC)CC)N4)CC)CC)N3)CC)CC)CC.[Zn] Chemical compound C(C)C1=C(C=2C=C3C(=C(C(=CC=4C(=C(C(=CC5=C(C(=C(N5)C=C1N2)CC)CC)N4)CC)CC)N3)CC)CC)CC.[Zn] DGWSNUKQRDJSLY-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241001597008 Nomeidae Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003129 oil well Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical group C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003503 terephthalic acid derivatives Chemical class 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention relates to a pressure sensor based on a micro-structure gate insulation layer. The pressure sensor comprises a substrate, an active layer, the gate insulation layer and a flexible substrate, the substrate, the active layer, the gate insulation layer and the flexible substrate are arranged in sequence, an active electrode and a drain electrode are arranged between the substrate and the active layer, a gate electrode is arranged between the flexible substrate and the gate insulation layer, the gate insulation layer comprises an insulation layer and a PDMS micro-structure arranged on the insulation layer, and the active layer is cross-linked semiconductor compound nanocrystalline. The pressure sensor comprises the gate electrode, the active electrode, the drain electrode, the gate insulation layer and the active layer, wherein the active layer is the crossed-link nanocrystalline made of organic semiconductor layer materials, and is formed by the interaction force of organic semiconductor molecules. The pressure sensor has the advantages of being capable of being manufactured in a solubilizing mode, flexible, high in sensitivity and the like.
Description
[technical field]
The invention belongs to the transducer preparing technical field, particularly a kind of pressure sensor based on the micro-structural gate insulation layer and preparation method thereof.
[background technology]
Pressure sensor is a kind of transducer the most commonly used in industry, instrument and meter control, and be widely used in various industrial automatic control environment, relate to numerous industries such as water conservancy, water power, railway traffic, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe ,Guan road.
Total class of pressure sensor is more at present, and commonly used is piezoresistive pressure sensor, and it utilizes the piezoresistive effect of single crystal silicon material and the transducer that integrated circuit technique is made, and has the advantages such as response frequency is high, volume is little, little power consumption, highly sensitive, precision is good; But due to its transmission based on polysilicon, complicated process of preparation, temperature influence are apparent in view, and simultaneously, the silicon materials flexibility is poor, is difficult to meet the special dimensions such as highly sensitive, flexible, as the demand of the aspects such as medical science, biology.
At present, existing a kind of field-effect transistor pressure sensor based on the micro-structural gate insulation layer, its action principle is different from piezoresistive transducer, and it is to cause the variation of micro-structural gate insulation layer dielectric constant by the variation of ambient pressure, and then causes the variation of source-drain current.
Because transistorized source-drain current has the enlarge-effect to capacitance variations, so the remolding sensitivity of sensors with auxiliary electrode were is higher.But, the single-chip of such transducer active layer based semiconductor material of reporting at present, its preparation process relates to preparation and the transfer of monocrystalline, this process more complicated; Simultaneously, because the otherness between different crystal is larger, the uniformity of transducer is poor; And be unfavorable for the preparation of large tracts of land, solubilize.
[summary of the invention]
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, and a kind of pressure sensor based on the micro-structural gate insulation layer is provided.
Purpose of the present invention is achieved through the following technical solutions: comprise the substrate, active layer, gate insulation layer and the flexible substrates that set gradually, wherein, active electrode, drain electrode are set between described substrate and active layer, be provided with gate electrode between described flexible substrates and gate insulation layer, described gate insulation layer comprises the PDMS micro-structural on insulating barrier and described insulating barrier, and described active layer is crosslinked semiconductor compound nano crystalline substance.
Further, described crosslinked semiconductor compound nano crystalline substance is the netted or dendritic morphology of one dimension.
Further, described crosslinked semiconducting compound is the organic small molecular semiconductor material.
Further, described crosslinked semiconducting compound is polymer semiconducting material.
Further, the compound that described crosslinked semiconducting compound is organic small molecular semiconductor material and polymer semiconducting material.
Say further described organic small molecular semiconductor material Wei perylene diimide compounds, perylene diimide class, metallo phthalocyanine, thiophenes, metal porphyrins or pentacene derivative.
Further, described polymer semiconducting material is polythiophene class or polyfluorene compound.
Further, described PDMS micro-structural is array cylinder, centrum or reverse taper.
In addition, the present invention also provides a kind of preparation method of the pressure sensor based on the micro-structural gate insulation layer, comprises the steps: S1, prepares source electrode and drain electrode in substrate; S2, in source electrode, drain electrode and substrate, prepare crosslinked semiconductor nano as active layer; S3, on flexible substrates, prepare gate electrode; S4, on flexible substrates and gate electrode, prepare insulating barrier; S5, the gate insulation layer that the micro-structural formation of preparation PDDMS contains micro-structural on insulating barrier; S6, the gate insulation layer that contains micro-structural that step (5) is obtained, the active layer surface that reverse transition obtains in step (2), obtain the pressure sensor based on the micro-structural gate insulation layer.
Further, structure described in step S1 adopts the method for inkjet printing, aerosol spray printing, sputter or evaporation to be constructed; The method of constructing described in step S2 is for revolving Tu, dripping film, immersion, aerosol spray printing, inkjet printing, silk screen printing or thermal evaporation; The method of constructing described in step S3 is sputter, aerosol spray printing, silk screen printing, ink jet printing or thermal evaporation; The method of adding described in step S4 is for revolving Tu, sputter or printing; The method of constructing described in step S5 is photoetching or printing.
The present invention has following advantage and effect with respect to prior art: described pressure sensor comprises gate electrode, source electrode, drain electrode, gate insulation layer, active layer, wherein, described active layer is the nanocrystalline of crosslinked organic semiconductor layer material, and it forms by the interaction force between molecule organic semiconductor.Above-mentioned pressure sensor has solvable liquefaction preparation, flexible, high sensitivity.
[accompanying drawing explanation]
Fig. 1 illustrates the structural representation of the pressure sensor based on the micro-structural gate insulation layer of the embodiment of the present invention.
[embodiment]
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
As shown in Figure 1, the present embodiment provides a kind of pressure sensor based on the micro-structural gate insulation layer, comprises the substrate 1, active layer 4, gate insulation layer 5 and the flexible substrates 7 that set gradually.
Wherein, active electrode 2, drain electrode 3 are set between substrate 1 and active layer 4, be provided with gate electrode 6 between flexible substrates 7 and gate insulation layer 5, gate insulation layer 5 comprises the PDMS(dimethyl silicone polymer on insulating barrier and insulating barrier) micro-structural, active layer is crosslinked semiconductor compound nano crystalline substance.
The pressure sensor that the present embodiment provides comprises gate electrode 6, source electrode 2, drain electrode 3, gate insulation layer 5, active layer 4, wherein, active layer is the nanocrystalline of crosslinked organic semiconductor layer material, and it forms by the interaction force between molecule organic semiconductor.Above-mentioned pressure sensor has solvable liquefaction preparation, flexible, high sensitivity.
Further, crosslinked semiconductor compound nano crystalline substance is the netted or dendritic morphology of one dimension; The mixture that crosslinked semiconducting compound is organic small molecular semiconductor material, polymer semiconducting material or organic small molecular semiconductor material and polymer semiconducting material; The nanocrystalline Wei of semi-conducting material perylene diimide compounds, perylene diimide class, metal phthalocyanine compound, metal porphyrins, pentacene derivative, polythiophene class compound or polyfluorene compound.
Further, the PDMS micro-structural is array cylinder, centrum or reverse taper; Preferably the spacing of cylinder is 5～50 μ m, and diameter is 10～40 μ m; The spacing of centrum is 5～200 μ m, and the diameter of centrum is 20-500 μ m for large section diameter, and segment is directly 5-50 μ m.
Further, substrate 1 is silicon, silicon dioxide, glass, quartz, PET(polyethylene terephthalate), the PC(Merlon), the PI(polyimides), the PEN(PEN) substrate; Flexible substrates 7 is PI, PET, PC or PEN substrate..
In addition, the present invention also provides a kind of preparation method of the pressure sensor based on the micro-structural gate insulation layer, comprises the steps:
S1, in substrate 1 preparation source electrode 2 and drain electrode 3;
S2, in source electrode 2, drain electrode 3 and substrate 1, prepare crosslinked semiconductor nano as active layer 4;
S3, on flexible substrates 7, prepare gate electrode 6;
S4, on flexible substrates 7 and gate electrode 6, prepare insulating barrier;
S5, the gate insulation layer that the micro-structural formation of preparation PDMS contains micro-structural on insulating barrier;
S6, the gate insulation layer that contains micro-structural that step (5) is obtained, the active layer surface that reverse transition obtains in step (2), obtain the pressure sensor based on the micro-structural gate insulation layer.
Embodiment 1
The prepared pressure sensor that is based on top grid-end contact-type of the present embodiment, its manufacture method is as follows:
S1 utilizes thermal evaporation to prepare source electrode 2 and the drain electrode 3 of a layer thickness for 100nm gold material on silicon base 1.Wherein, the width of source electrode 2, drain electrode 3 is 200 μ m, and length is 1000 μ m, and the distance between two electrodes is 20 μ m.
S2, on silicon base 1 and source electrode 2, drain electrode 3, by revolving the Tu method, to prepare crosslinked Yi Wei perylene diimide compounds nanocrystalline as active layer 4.
S3, in PET substrate 7, utilize the method for sputter to prepare the gate electrode 6 that a layer thickness is 100nm, and this gate electrode consists of Si.Wherein, the manufacture method of PET substrate 7 is by PET(Polyethylene terephthalate, poly terephthalic acid class plastics) as substrate, use successively acetone, ethanol, pure water ultrasonic 40 minutes, use afterwards N
2air-blowing is dry, puts into 100 ℃ of vacuum drying ovens and places 10 minutes, forms PET substrate 7.
S4, on PET substrate 7 and gate electrode 6, utilize the method for revolving Tu to prepare PMMA(polymethylmethacrylate, polymethyl methacrylate) layer.
S5, the PMMA layer surface obtained in step S4, utilize the method for aerosol spray printing to prepare the micro-structural of PDMS, using the micro-structural of PMMA layer and PDMS as gate insulation layer 5.
S6, overturn the gate insulation layer 5 obtained in step S5, and transfer to active layer 4 surfaces that obtain in step S2 together with PET substrate 7 and gate electrode 6, make above-mentioned pressure sensor.
In this embodiment, the nanocrystalline preparation method of Yi Wei perylene diimide compounds crosslinked in step S2 is: utilize spin coating method that the chloroformic solution of perylene diimide compounds is transferred on silicon base 1 and source electrode 2, drain electrode 3, form the cross linking membrane of one dimension internet structure through 70 ℃ of thermal anneal process perylene diimide compounds, wherein ， perylene diimide compounds concentration is 6mg/ml.
In step S5, to prepare the micro-structural of PDMS be column structure to the method for aerosol spray printing; Further, the column structure diameter of PDMS is 20 μ m, and the spacing of cylinder is 50 μ m.
The prepared pressure sensor that is based on top grid-end contact-type of the present embodiment, its manufacture method is as follows:
S1 utilizes sputtering method to prepare source electrode 2 and the drain electrode 3 of a layer thickness for 100nm gold material in PC substrate 1.Wherein, the width of source electrode 2, drain electrode 3 is 200 μ m, and length is 200 μ m, and the distance between two electrodes is 20 μ m.
S2, on PC substrate 1 and source electrode 2, drain electrode 3, the method for by liquid phase, dripping film prepares the hybrid films of the nanocrystalline and poly-fluorenes of crosslinked one-dimensional metal porphyrins as active layer 4.
S3, in PET substrate 7, utilize the method for sputter to prepare the gate electrode 6 that a layer thickness is 60nm, and this gate electrode consists of gold.Wherein, the manufacture method of PET substrate 7 is using PET as substrate, uses successively acetone, ethanol, pure water ultrasonic 40 minutes, uses afterwards N
2air-blowing is dry, puts into 100 ℃ of vacuum drying ovens and places 10 minutes, forms PET substrate 7.
S4, on PET substrate 7 and gate electrode 6, utilize the method for sputter to prepare the SiO that a layer thickness is 1 μ m
2layer.
S5, the SiO obtained in step S4
2layer surface, revolve Tu one deck PDMS, adopts conventional photoetching technique to prepare the micro-structural of PDMS, by SiO
2the micro-structural of layer and PDMS is as gate insulation layer 5.
S6, overturn the gate insulation layer 5 obtained in step S5, and transfer to active layer 4 surfaces that obtain in step S2 together with PET substrate 7 and gate electrode 6, make above-mentioned pressure sensor.
In this embodiment, in step S2, the preparation method of the crosslinked nanocrystalline and poly-fluorenes hybrid films of one-dimensional metal derivatives of porphyrin compounds is: utilize to drip film method the chloroformic solution of octaethylporphyrin zinc and poly-fluorenes is transferred on PET substrate 1 and source electrode 2, drain electrode 3, through 100 ℃ of thermal anneal process, form the hybrid films of the nanocrystalline and poly-fluorenes of crosslinked one-dimensional metal derivatives of porphyrin compounds, wherein, octaethylporphyrin zinc compound concentration is 1mg/ml.
The micro-structural of the PDMS obtained in step S5 is the inverted pyramidal structures structure; Further, the height of vertebral body structure is 200 μ m, and lower end is directly 20 μ m, and upper end diameter is 40 μ m, and the spacing of cylinder is 100 μ m.
The prepared pressure sensor that is based on top grid-end contact-type of the present embodiment, its manufacture method is as follows:
S1 utilizes sputtering method to prepare source electrode 2 and the drain electrode 3 of a layer thickness for 100nm silver material on quartz substrate 1.Wherein, the width of source electrode 2, drain electrode 3 is 500 μ m, and length is 2000 μ m, and the distance between two electrodes is 50 μ m.
S2, on substrate 1 and source electrode 2, drain electrode 3, prepare crosslinked one dimension pentacene derivative by the method for soaking nanocrystalline as active layer 4.
S3, in PI substrate 7, utilize the method for sputter to prepare the gate electrode 6 that a layer thickness is 60nm, and this gate electrode 6 consists of gold.Wherein, the manufacture method of PI substrate 7 is using PI as substrate, uses successively acetone, ethanol, pure water ultrasonic 40 minutes, uses afterwards N
2air-blowing is dry, puts into 150 ℃ of vacuum drying ovens and places 10 minutes, forms PI substrate 7.
S4, on PET substrate 7 and gate electrode 6, utilize the method for revolving Tu to prepare one deck polystyrene (PS) layer.
S5, the PS layer surface obtained in step S4, revolve Tu one deck PDMS, utilizes the method for hot padding, and the micro-structural of preparation PDMS, using the micro-structural of PS layer and PDMS as gate insulation layer 5.
S6, overturn the gate insulation layer 5 obtained in step S5, and transfer to active layer 4 surfaces that obtain in step S2 together with PET substrate 7 and gate electrode 6, make above-mentioned pressure sensor.
In this embodiment, the nanocrystalline preparation method of one dimension pentacene derivative crosslinked in step S2 is: the method for utilize soaking is transferred to the chlorobenzene solution of pentacene derivative on quartz substrate 1 and source electrode 2, drain electrode 3, through the normal temperature solvent evaporates, pentacene derivative forms the cross linking membrane of one dimension internet structure, wherein, pentacene derivative concentration is 2mg/ml.
The micro-structural that obtains adopting the method for hot padding to prepare PDMS in step S5 is column structure; Further, the diameter of the column structure of PDMS is 10 μ m, and the spacing of cylinder is 20 μ m.
The prepared pressure sensor that is based on top grid-end contact-type of the present embodiment, its manufacture method is as follows:
S1 utilizes the method for the method of silk screen printing to prepare source electrode 2 and the drain electrode 3 of a layer thickness for 300nm silver material on substrate of glass 1.Wherein, the width of source electrode 2, drain electrode 3 is 400 μ m, and length is 3000 μ m, and the distance between two electrodes is 100 μ m.
S2, on substrate 1 and source electrode 2, drain electrode 3, by the method for aerosol spray printing, prepare crosslinked one dimension polythiophene class compound as active layer 4.
S3, the method with sputter in PI substrate 7 prepares the gate electrode 6 that a layer thickness is 60nm, and this gate electrode 6 consists of gold.Wherein, the manufacture method of PI substrate 7 is using PI as substrate, uses successively acetone, ethanol, pure water ultrasonic 40 minutes, uses afterwards N
2air-blowing is dry, puts into 100 ℃ of vacuum drying ovens and places 10 minutes, forms PI substrate 7.
S4, on PI substrate 7 and gate electrode 6, utilize the method for revolving Tu to prepare one deck PMMA layer,
S5, the PMMA layer surface obtained in step S4, utilize the printing process of 3-dimension to prepare the micro-structural of PDMS, using the micro-structural of PMMA layer and PDMS as gate insulation layer 5.
S6, overturn the gate insulation layer 5 obtained in step S5, and transfer to active layer 4 surfaces that obtain in step S2 together with PI substrate 7 and gate electrode 6, make above-mentioned pressure sensor.
In this embodiment, in step S2, the preparation method of crosslinked one dimension polythiophene class compound nano crystalline substance comprises: the method for utilizing the aerosol spray printing is transferred to the toluene solution of polythiophene class compound on substrate 1 and source electrode 2, drain electrode 3, through 120 ℃ of thermal anneal process, the thiophene derivant compound forms the cross linking membrane of one dimension internet structure, wherein, the concentration of polythiophene class compound is 20mg/ml.
The micro-structural that adopts the method for hot padding to prepare PDMS in step S5 is cone structure; Further, the cone structure of PDMS, centrum is high is 10 μ m, and the lower end diameter diameter is 40 μ m, and upper end diameter is 10 μ m, and the spacing of centrum is 20 μ m.
Pressure sensor of the present invention and preparation method thereof, organic semiconducting materials comprises the compounds such as metal phthalocyanine class, pentacene class, naphthalimide, metalloporphyrin class and polythiophene class, poly-fluorenes class, but is not limited to above embodiment.
Wherein, the nanocrystalline preparation method of crosslinked organic semiconducting materials not only can realize reality according to the spin coating of use respectively in embodiment 1 to 4, a method such as film, aerosol spray printing and immersion, also can realize by the method for ink jet printing, intaglio printing, silk screen printing, roller coat and Electrospun, and annealing in process can be also the annealing in process in atmosphere of inert gases, implementation result is basic identical, so follow-up, repeats no more.
Pressure sensor based on the micro-structural gate insulation layer provided by the invention, but there is the features such as solubilize preparation, flexibility, high sensitivity, preparation method provided by the present invention is simple to operate simultaneously, energy consumption is low, be suitable for suitability for industrialized production, therefore in the preparation of flexibility, large tracts of land, low cost, high sensitivity pressure sensor, there is important using value.
Above the specific embodiment of the present invention, do not form limiting the scope of the present invention.Various other corresponding changes and distortion that any technical conceive according to the present invention is made, all should be included in the protection range of the claims in the present invention.
Claims (10)
1. the pressure sensor based on the micro-structural gate insulation layer, it is characterized in that, comprise the substrate, active layer, gate insulation layer and the flexible substrates that set gradually, wherein, active electrode, drain electrode are set between described substrate and active layer, be provided with gate electrode between described flexible substrates and gate insulation layer, described gate insulation layer comprises the PDMS micro-structural on insulating barrier and described insulating barrier, and described active layer is crosslinked semiconductor compound nano crystalline substance.
2. pressure sensor according to claim 1, is characterized in that, described crosslinked semiconductor compound nano crystalline substance is the netted or dendritic morphology of one dimension.
3. pressure sensor according to claim 2, is characterized in that, described crosslinked semiconducting compound comprises the organic small molecular semiconductor material.
4. pressure sensor according to claim 2, is characterized in that, described crosslinked semiconducting compound is polymer semiconducting material.
5. pressure sensor according to claim 2, is characterized in that, the compound that described crosslinked semiconducting compound is organic small molecular semiconductor material and polymer semiconducting material.
6. pressure sensor according to claim 3, is characterized in that, described organic small molecular semiconductor material Wei perylene diimide compounds, metallo phthalocyanine, thiophenes, metal porphyrins or pentacene derivative.
7. pressure sensor according to claim 4, is characterized in that, described polymer semiconducting material is polythiophene class compound or polyfluorene compound.
8. pressure sensor according to claim 1, is characterized in that, cylinder, centrum or reverse taper that described PDMS micro-structural is array.
9. the preparation method of the described pressure sensor based on the micro-structural gate insulation layer of claim 1～8 any one, is characterized in that, comprises the steps:
S1, in substrate preparation source electrode and drain electrode;
S2, in source electrode, drain electrode and substrate, prepare crosslinked semiconductor nano as active layer;
S3, on flexible substrates, prepare gate electrode;
S4, on flexible substrates and gate electrode, prepare insulating barrier;
S5, the gate insulation layer that the micro-structural formation of preparation PDMS contains micro-structural on insulating barrier;
S6, the gate insulation layer that contains micro-structural that step (5) is obtained, the active layer surface that reverse transition obtains in step (2), obtain the pressure sensor based on the micro-structural gate insulation layer.
10. the preparation method of pressure sensor claimed in claim 9, is characterized in that,
Structure described in step S1 adopts the method for inkjet printing, aerosol spray printing, sputter or evaporation to be constructed;
The method of constructing described in step S2 is for revolving Tu, dripping film, immersion, aerosol spray printing, inkjet printing, silk screen printing or thermal evaporation;
The method of constructing described in step S3 is sputter, aerosol spray printing, silk screen printing, ink jet printing or thermal evaporation;
The method of adding described in step S4 is for revolving Tu, sputter or printing;
The method of constructing described in step S5 is photoetching or printing.
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