CN103730574A - Organic thin-film transistor and manufacturing method thereof - Google Patents
Organic thin-film transistor and manufacturing method thereof Download PDFInfo
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- CN103730574A CN103730574A CN201310744365.0A CN201310744365A CN103730574A CN 103730574 A CN103730574 A CN 103730574A CN 201310744365 A CN201310744365 A CN 201310744365A CN 103730574 A CN103730574 A CN 103730574A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
Abstract
The invention discloses an organic thin-film transistor and a manufacturing method of the organic thin-film transistor. The organic thin-film transistor is characterized in that an insulation layer covers a substrate provided with a grid electrode; a surface decorative layer covers the insulation layer; after the surface decorative layer is illuminated by ultraviolet light, cross-linking reaction is conducted; an organic semiconductor layer, a source electrode and a drain electrode are arranged on the surface decorative layer after the cross-linking reaction is finished, wherein the organic semiconductor layer, the source electrode and the drain electrode are in ohmic contact with the organic semiconductor layer; the source electrode and the drain electrode are communicated through the organic semiconductor layer. According to the organic thin-film transistor, the surface decorative layer is illuminated by the ultraviolet light, so that the cross-linking reaction is conducted on macromolecular polymer; the macromolecular polymer interface decorative layer is additionally arranged between the semiconductor layer and the grid insulation layer, so that a carrier trap of a hydroxide radical group on the grid insulation layer is avoided, the good device performance is obtained, and the hysteresis effect is greatly reduced.
Description
Technical field
The present invention relates to a kind of OTFT, belong to field of semiconductor devices.
Background technology
OTFT (Organic Thin Film Transistor is called for short OTFT) is a kind of semiconductor device that replaces traditional silicon semi-conducting material with organic material.Organic material is very high with respect to silica-base material processing difficulties, cost, but OTFT (OTFT) is because having, and cost is low, quality is light, can low temperature process, be suitable for making the advantages such as flexible display device, in flat panel display, there is very large application prospect, be therefore subject to the attention of researcher.Since first OTFT in 1987 is born, no matter be the research to OTFT insulating material, semi-conducting material, electrode material, or the improvement to device architecture, all obtained significant progress.Affecting in the middle of OTFT performance factors, there is vital impact at the interface between insulating barrier and active layer on the performance of whole OTFT.Therefore select a kind of suitable finishing to have a significant impact making high performance OTFT.
Because organic semiconductor thin-film all has useful life conventionally, if use film transistor device in integrated circuit, easily cause on the one hand device performance to decline, reduce display effect, also can make on the other hand device occur bad point, also can cause switch current ratio to reduce.The existence of these problems has seriously hindered the application of OTFT device in large area array and integrated circuit.
Ultraviolet lighting gate insulation layer is by cross-linking reaction occurs, thereby the depositional model of change semi-conducting material is realized semiconductive thin film film forming feature and changed.This method can make the bias stability of device strengthen, and it is fast to have realized preparation speed, prepares the feature of environment gentleness and is subject to the primary study of academia, becomes the focus of research.
Main employing increases the method for finishing coat molecular weight raising bias stability at present.Structurally there is fatal defect to the device of making in the molecular weight that increases finishing coat, because the addition of molecular weight is manufactured with great difficulty.
The defect of prior art is, adopts other technique, and manufacture difficulty is large, and bias stability is poor, and is difficult to obtain high electric property.
Summary of the invention
The present invention, for avoiding the existing weak point of above-mentioned prior art, provides simple OTFT of a kind of preparation technology and preparation method thereof, to can effectively improving the bias stability of OTFT.
Technical solution problem of the present invention, adopts following technical scheme:
OTFT of the present invention, its feature is: described transistor is to be coated with insulating barrier on the substrate that is provided with gate electrode, on insulating barrier, be coated with finishing coat, after UV-irradiation, there is cross-linking reaction in described finishing coat, on the finishing coat occurring after cross-linking reaction, be provided with organic semiconductor layer and be source electrode and the drain electrode of ohmic contact with described organic semiconductor layer, described source electrode and drain electrode are communicated with by organic semiconductor layer.
OTFT of the present invention, its feature is also: described substrate is silicon chip, glass or plastics.
Described ultraviolet light wavelength is 100nm-280nm, and the irradiation time of described ultraviolet light is 30s-180min, and described ultraviolet light intensity is 100uw/cm
2-100000uw/cm
2.
Described gate electrode is Ta electrode, Ti electrode, W electrode, Al electrode, ITO electrode, Cr electrode, Au electrode, Ag electrode or Mo electrode.
Described organic semiconductor layer is pentacene semiconductor layer, rubrene semiconductor layer, CuPc semiconductor layer, Phthalocyanine Zinc semiconductor layer, Nickel Phthalocyanine semiconductor layer, also [3,2-b] benzothiophene semiconductor layer, dinaphtho [2,3-b:2' of fluoro CuPc semiconductor layer, fluoro phthalocyanine chromium semiconductor layer, benzothiophene, 3'-f] thieno [3,2-b] thiophen semiconductors layer, C60 semiconductor layer, benzene-naphthalene diimide semiconductor layer Huo perylene diimides semiconductor layer.
Described insulating barrier be in silicon dioxide layer, silicon nitride layer, alumina layer, titanium oxide layer, thallium oxide layer, epoxy resin layer, polyimide layer, polymethyl methacrylate layers, polyvinyl alcohol layer, polyvinylidene fluoride layer, polyvinylphenol layer or silicone layer a kind of or any two kinds compound.
Same in described source electrode and leak electricity very Ta electrode, Ti electrode, W electrode, Al electrode, ITO electrode, Cr electrode, Au electrode, Ag electrode, Mo electrode or Graphene electrodes or different two kinds arbitrarily.
Described finishing coat is polystyrene film layer, polyvinyl cinnamate thin layer or poly alpha methylstyrene thin layer.
Described polystyrene film layer is prepared as follows: take toluene as solvent, take polystyrene as solute, preparation polystyrene solution, concussion 30min, with the speed of 1000-4500rad/min, described polystyrene solution is spun to insulating barrier with spin coating instrument, then under 100-200 ℃ of condition, dry 10-60min, obtain polystyrene film, the thickness of described polystyrene film is 10nm-2 μ m;
Described polyvinyl cinnamate thin layer is prepared as follows: take toluene as solvent, take polyvinyl cinnamate as solute, preparation polyvinyl cinnamate solution, concussion 30min, with the speed of 1000-4500rad/min, described polyvinyl cinnamate solution is spun to insulating barrier with spin coating instrument, then under 100-200 ℃ of condition, dry 10-60min, obtain polyvinyl cinnamate film, the thickness of described polyvinyl cinnamate film is 10nm-2 μ m;
Described poly alpha methylstyrene thin layer is prepared as follows: take toluene as solvent, take poly alpha methylstyrene as solute, preparation poly alpha methylstyrene solution, concussion 30min, with the speed of 1000-4500rad/min, described poly alpha methylstyrene solution is spun to insulating barrier with spin coating instrument, then under 100-200 ℃ of condition, dry 10-60min, obtain poly alpha methylstyrene film, the thickness of described poly alpha methylstyrene film is 10nm-2 μ m.
The preparation method of OTFT of the present invention, its feature is: carry out as follows:
A, by the mode of photoetching, plated film, at the upper surface of substrate, gate electrode is set;
B, on the substrate that is provided with gate electrode, prepare insulating barrier, make insulating barrier cover gate electrode and upper surface of base plate;
C, finishing coat is set on insulating barrier, then with UV-irradiation finishing coat, makes it that cross-linking reaction occur;
D, at the upper surface evaporation semiconductor layer of finishing coat, then arrange with described semiconductor layer and be the electrode of ohmic contact as source electrode and the drain electrode of semiconductor layer in pairs;
Or at the upper surface of finishing coat, source electrode and drain electrode are set in pairs, and then evaporation connects the semiconductor layer of described source electrode and drain electrode.
Preferably, when using polystyrene film layer as table decorative layer, using pentacene semiconductor layer as organic semiconductor layer, be prepared as follows:
A, by the mode of photoetching, plated film, at the upper surface of substrate, gate electrode is set;
B, on substrate, prepare insulating barrier, make insulating barrier cover gate electrode and upper surface of base plate;
C, take toluene as solvent, take polystyrene as solute, compound concentration is the polystyrene solution of 5mg/ml, concussion 30min, with the speed of 3500rad/min, described polystyrene solution is spun on insulating barrier (3) with spin coating instrument, then on 120 ℃ of hot platforms, dry 30min, the polystyrene film layer that acquisition thickness is 20nm;
D, the substrate that is provided with polystyrene film layer is put into glove box, with the surperficial 30s-10min of 256nm UV-irradiation polystyrene film;
E, on the surface of the polystyrene film through UV-irradiation by evaporated device evaporation 60nm pentacene semiconductor layer;
F, at the upper surface of described pentacene semiconductor layer, the gold electrode of 65nm is set in pairs as source electrode and the drain electrode of pentacene semiconductor layer.
There is cross-linking reaction in polystyrene (PS), surface characteristic is changed under 100nm-280nm ultraviolet source irradiation, the future development that contributes to semiconductor layer to form, and reaction equation is as shown in Figure 2.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, OTFT of the present invention is utilized ultraviolet lighting finishing coat, make high molecular polymer generation cross-linking reaction, between semiconductor layer and gate insulation layer, increased high molecular polymer modifying interface layer, thereby avoided the carrier traps of oh group on gate insulation layer, obtained good device performance, and greatly reduce hesitation, purple light light durability is good, convenient and swift, the machine thin-film transistor of making has high mobility and higher bias stability, improved the useful life of device, and preparation technology is simple, stable electrical properties, yield is high,
2, the preparation method of OTFT of the present invention is simple, is applicable to large-scale industrial production;
3, OTFT of the present invention can adopt flexible substrates, is easy to the preparation of flexible device.
Accompanying drawing explanation
Fig. 1 is the structural representation of OTFT of the present invention;
Fig. 2 is polystyrene generation cross-linking reaction diagram.
Fig. 3 is different surfaces decorative layer device output characteristic curve and transfer characteristic curve.
Fig. 4 is different surfaces decorative layer deviated stress curve.
Fig. 5 is that under deviated stress, different surfaces is modified OTFT device I
dS(t)/I
dS(0) with the relation of time.
Number in the figure: 1 substrate; 2 gate electrodes; 3 insulating barriers; 4 finishing coats; 5 organic semiconductor layers; 6 source electrodes; 7 drain electrodes.
Specific embodiment
Embodiment 1
As shown in Figure 1, the present embodiment OTFT is to be coated with insulating barrier 3 on the substrate 1 that is provided with gate electrode 2, on insulating barrier 3, be coated with finishing coat 4, after UV-irradiation, there is cross-linking reaction in finishing coat 4, on the finishing coat occurring after cross-linking reaction, be provided with organic semiconductor layer 5 and be source electrode 6 and the drain electrode 7 of ohmic contact with organic semiconductor layer, source electrode 6 and drain electrode 7 are communicated with by organic semiconductor layer 5.In Fig. 1 (a), semiconductor layer and source electrode 6 and drain electrode 7 are top contact form, also can adopt the end contact form shown in Fig. 1 (b).
The present embodiment OTFT is to be prepared as follows:
A, take toluene as solvent, with polystyrene for doing solute, the polystyrene solution that compound concentration is 5mg/ml, concussion 30min, polystyrene is fully dissolved; Getting substrate is that N-type heavy doping silicon chip is as substrate, using it as gate electrode, at its thermal oxide growth layer of silicon dioxide layer as insulating barrier, with the speed of 3500rad/min, polystyrene solution is spun on insulating barrier with spin coating instrument, then on 120 ℃ of hot platforms, dry 30min, the polystyrene film that acquisition thickness is 20nm;
B, the substrate that is provided with polystyrene film is put into glove box, with the surface of 256nm UV-irradiation polystyrene film, light intensity is 15000uw/cm
2, the photochemical reaction of irradiating respectively different time 0min, 30s, 3min, 10min and make gate insulation layer generation different time;
For characterizing the degree of different irradiation time generation cross-linking reactions, with surface can and contact angle represent, employing geometric mean method formula (1+cos θ
t) γ
t=2{ (γ
t dγ
s d)
1/2+ (γ
t pγ
s p)
1/2gauging surface energy, wherein θ is contact angle, γ
tand γ
sthe surface energy that is respectively solid-liquid interface, carries out quantitatively characterizing to the surface characteristic of different modifying, and by water and diiodomethane statement contact angle.Table 1 has reacted the different corresponding contact angles of generation cross-linking reaction degree and surface energy, given the surface nature of gate insulation layer quantification.Different surface naturies has a significant impact semi-conductive growth, finally affects electric property and the bias stability of OTFT.
The contact angle of table 1 ultraviolet lighting different time PS surface water and diiodomethane, and surperficial energy
C, on the surface of the polystyrene film through UV-irradiation by evaporated device the speed evaporation 60nm pentacene semiconductor layer with 3nm/min, when evaporation, use MASK to make pentacene semiconductor layer pattern;
D, at the upper surface of pentacene semiconductor layer, the gold electrode of 65nm is set in pairs as the source-drain electrode of pentacene semiconductor layer.Gold electrode between channel length be 135um, channel width 770um.
Fig. 3 is embodiment of the present invention 1(a) transfer characteristic curve of OTFT when the UV-irradiation 0s, Fig. 3 (e) is its output characteristic curve; The transfer characteristic curve of OTFT when Fig. 3 (b) is UV-irradiation 30s, Fig. 3 (f) is its output characteristic curve; The transfer characteristic curve of OTFT when Fig. 3 (c) is UV-irradiation 3min, Fig. 3 (g) is its output characteristic curve; The transfer characteristic curve of OTFT when Fig. 3 (d) is UV-irradiation 10min, Fig. 3 (h) is its output characteristic curve; V in transfer curve
dS=-60V, in Fig. 3 (a), Fig. 3 (b) Fig. 3 (c) and Fig. 3 (d), real point is-I
dS, imaginary point line is data fitting curve.As calculated, the average mobility of 40 points of four samples is respectively: (0.978cm
2v
-1s
-1, 1.04cm
2v
-1s
-1, 1cm
2v
-1s
-1, 1.23cm
2v
-1s
-1), can find out that surface is along with the ultraviolet lighting time strengthens, electric property is grow trend.Prove that ultraviolet lighting is conducive to strengthen OTFT electric property.
Fig. 4 is the deviated stress curve of the device under different irradiation times in the embodiment of the present invention 1: a) 0s, b) 30s, c) 3min, d) 10min, the testing time is 0min-200min, once, test condition is V to interval 20min
dS=-5V, V
gS=-60V, test environment is in air at room temperature.As can be seen from the figure, surface is along with the ultraviolet lighting time increases, and bias stability strengthens gradually.Prove that ultraviolet lighting is conducive to strengthen OTFT bias stability.
Fig. 5 be in the embodiment of the present invention 1 under deviated stress different surfaces modify OTFT device I
dS(t)/I
dS(0) with the relation of time.As can be seen from the figure, irradiation time is 0 o'clock, and fall off rate is fast, and namely along with biasing stress time lengthens, the High Output Current of device reduces gradually, finally drops to 13% of device initial performance.Along with the ultraviolet lighting PS growth of surface time, in same time, device performance declines slack-off gradually.When ultraviolet lighting time 10min, continue to add after 200min bias voltage, device electric property drops to 42% of initial performance, obviously can find out that the bias stability of device strengthens gradually along with the ultraviolet lighting time increases.This has also just proved that ultraviolet lighting is conducive to strengthen OTFT bias stability.
Polystyrene can change polyvinyl cinnamate into, and all the other processing steps are identical with embodiment 1.
Polystyrene can change poly alpha methylstyrene material into, and all the other processing steps are identical with embodiment 1.
Gate electrode changes metal Ta into, and all the other processing steps are identical with embodiment 1.
Gate electrode changes metal Ti into, and all the other processing steps are identical with embodiment 1.
Embodiment 6
Gate electrode changes metal W into, and all the other processing steps are identical with embodiment 1.
Embodiment 7
Gate electrode changes metal A l into, and all the other processing steps are identical with embodiment 1.
Embodiment 8
Gate electrode changes metal ITO into, and all the other processing steps are identical with embodiment 1.
Embodiment 9
Gate electrode changes Metal Cr into, and all the other processing steps are identical with embodiment 1.
Gate electrode changes metal A u into, and all the other processing steps are identical with embodiment 1.
Embodiment 11
Gate electrode changes metal A g into, and all the other processing steps are identical with embodiment 1.
Embodiment 12
Gate electrode changes metal M o into, and all the other processing steps are identical with embodiment 1.
Embodiment 13
Insulating barrier changes silicon nitride into, and all the other processing steps are identical with embodiment 1.
Embodiment 14
Insulating barrier changes aluminium oxide into, and all the other processing steps are identical with embodiment 1.
Embodiment 15
Insulating barrier changes titanium oxide into, and all the other processing steps are identical with embodiment 1.
Embodiment 16
Insulating barrier changes thallium oxide into, and all the other processing steps are identical with embodiment 1.
Embodiment 17
Insulating barrier changes epoxy resin into, and all the other processing steps are identical with embodiment 1.
Embodiment 18
Insulating barrier changes polyimides into, and all the other processing steps are identical with embodiment 1.
Embodiment 19
Insulating barrier changes into assembles aminoacrylic acid methyl esters, and all the other processing steps are identical with embodiment 1.
Insulating barrier changes polyvinyl alcohol into, and all the other processing steps are identical with embodiment 1.
Embodiment 21
Insulating barrier changes Kynoar into, and all the other processing steps are identical with embodiment 1.
Embodiment 22
Insulating barrier changes polyvinylphenol into, and all the other processing steps are identical with embodiment 1.
Embodiment 23
Insulating barrier changes polysiloxanes into, and all the other processing steps are identical with embodiment 1.
Embodiment 24
Source-drain electrode changes Ta into, and all the other processing steps are identical with embodiment 1.
Embodiment 25
Source-drain electrode changes Ti into, and all the other processing steps are identical with embodiment 1.
Embodiment 26
Source-drain electrode changes W into, and all the other processing steps are identical with embodiment 1.
Embodiment 27
Source-drain electrode changes Al into, and all the other processing steps are identical with embodiment 1.
Embodiment 28
Source-drain electrode changes ITO into, and all the other processing steps are identical with embodiment 1.
Embodiment 29
Source-drain electrode changes Cr into, and all the other processing steps are identical with embodiment 1.
Source-drain electrode changes Au into, and all the other processing steps are identical with embodiment 1.
Embodiment 31
Source-drain electrode changes Ag into, and all the other processing steps are identical with embodiment 1.
Embodiment 32
Source-drain electrode changes Mo into, and all the other processing steps are identical with embodiment 1.
Embodiment 33
Source-drain electrode changes Graphene into, and all the other processing steps are identical with embodiment 1.
Embodiment 34
Organic semiconductor layer changes pentacene into, and all the other processing steps are identical with embodiment 1.
Embodiment 35
Organic semiconductor layer changes rubrene into, and all the other processing steps are identical with embodiment 1.
Embodiment 36
Organic semiconductor layer changes CuPc into, and all the other processing steps are identical with embodiment 1.
Embodiment 37
Organic semiconductor layer changes Phthalocyanine Zinc into, and all the other processing steps are identical with embodiment 1.
Embodiment 38
Organic semiconductor layer changes Nickel Phthalocyanine into, and all the other processing steps are identical with embodiment 1.
Embodiment 39
Organic semiconductor layer changes fluoro CuPc into, and all the other processing steps are identical with embodiment 1.
Organic semiconductor layer changes fluoro phthalocyanine chromium into, and all the other processing steps are identical with embodiment 1.
Embodiment 41
Organic semiconductor layer changes also [3,2-b] benzothiophene of benzothiophene into, and all the other processing steps are identical with embodiment 1.
Embodiment 42
Organic semiconductor layer changes dinaphtho [2,3-b:2', 3'-f] thieno [3,2-b] thiophene into, and all the other processing steps are identical with embodiment 1.
Embodiment 43
Organic semiconductor layer changes C60 into, and all the other processing steps are identical with embodiment 1.
Embodiment 44
Organic semiconductor layer changes benzene-naphthalene diimide into, and all the other processing steps are identical with embodiment 1.
Embodiment 45
Organic semiconductor layer Huan Cheng perylene diimides, all the other processing steps are identical with embodiment 1.
Claims (10)
1. an OTFT, it is characterized in that: described transistor is on the substrate that is provided with gate electrode (2) (1), to be coated with insulating barrier (3), on insulating barrier (3), be coated with finishing coat (4), after UV-irradiation, there is cross-linking reaction in described finishing coat (4), on the finishing coat occurring after cross-linking reaction, be provided with organic semiconductor layer (5) and be source electrode (6) and the drain electrode (7) of ohmic contact with described organic semiconductor layer, described source electrode (6) and drain electrode (7) are communicated with by organic semiconductor layer (5).
2. OTFT according to claim 1, is characterized in that: described substrate (1) is silicon chip, glass or plastics.
3. OTFT according to claim 1, is characterized in that: described finishing coat (4) is polystyrene film layer, polyvinyl cinnamate thin layer or poly alpha methylstyrene thin layer.
4. according to the OTFT described in claim 1 or 3, it is characterized in that: described ultraviolet light wavelength is 100nm-280nm, the irradiation time of described ultraviolet light is 30s-180min, and described ultraviolet light intensity is 100uw/cm
2-100000uw/cm
2.
5. OTFT according to claim 1, is characterized in that: described gate electrode (2) is Ta electrode, Ti electrode, W electrode, Al electrode, ITO electrode, Cr electrode, Au electrode, Ag electrode or Mo electrode.
6. OTFT according to claim 1, it is characterized in that: described organic semiconductor layer is pentacene semiconductor layer, rubrene semiconductor layer, CuPc semiconductor layer, Phthalocyanine Zinc semiconductor layer, Nickel Phthalocyanine semiconductor layer, fluoro CuPc semiconductor layer, fluoro phthalocyanine chromium semiconductor layer, benzothiophene also [3,2-b] benzothiophene semiconductor layer, dinaphtho [2,3-b:2', 3'-f] thieno [3,2-b] thiophen semiconductors layer, C60 semiconductor layer, benzene-naphthalene diimide semiconductor layer Huo perylene diimides semiconductor layer.
7. OTFT according to claim 1, is characterized in that: described insulating barrier be in silicon dioxide layer, silicon nitride layer, alumina layer, titanium oxide layer, thallium oxide layer, epoxy resin layer, polyimide layer, polymethyl methacrylate layers, polyvinyl alcohol layer, polyvinylidene fluoride layer, polyvinylphenol layer or silicone layer a kind of or any two kinds compound.
8. OTFT according to claim 1, is characterized in that: described source electrode (6) and drain electrode (7) are same in Ta electrode, Ti electrode, W electrode, Al electrode, ITO electrode, Cr electrode, Au electrode, Ag electrode, Mo electrode or Graphene electrodes or different two kinds arbitrarily.
9. a preparation method for OTFT described in claim 1, is characterized in that: carry out as follows:
A, by the mode of photoetching, plated film, at the upper surface of substrate, gate electrode is set;
B, on the substrate that is provided with gate electrode, prepare insulating barrier, make insulating barrier cover gate electrode and upper surface of base plate;
C, finishing coat is set on insulating barrier, then with UV-irradiation finishing coat, makes it that cross-linking reaction occur;
D, at the upper surface evaporation semiconductor layer of finishing coat, then arrange with described semiconductor layer and be the electrode of ohmic contact as source electrode and the drain electrode of semiconductor layer in pairs;
Or at the upper surface of finishing coat, source electrode and drain electrode are set in pairs, and then evaporation connects the semiconductor layer of described source electrode and drain electrode.
10. a preparation method for OTFT described in claim 1, is characterized in that: using polystyrene film layer as table decorative layer, using pentacene semiconductor layer as organic semiconductor layer, be prepared as follows:
A, by the mode of photoetching, plated film, at the upper surface of substrate, gate electrode is set;
B, on substrate, prepare insulating barrier, make insulating barrier cover gate electrode and upper surface of base plate;
C, take toluene as solvent, take polystyrene as solute, compound concentration is the polystyrene solution of 5mg/ml, concussion 30min, with the speed of 3500rad/min, described polystyrene solution is spun on insulating barrier (3) with spin coating instrument, then on 120 ℃ of hot platforms, dry 30min, the polystyrene film layer that acquisition thickness is 20nm;
D, the substrate that is provided with polystyrene film layer is put into glove box, with the surperficial 30s-10min of 256nm UV-irradiation polystyrene film;
E, on the surface of the polystyrene film through UV-irradiation by evaporated device evaporation 60nm pentacene semiconductor layer;
F, at the upper surface of described pentacene semiconductor layer, the gold electrode of 65nm is set in pairs as source electrode and the drain electrode of pentacene semiconductor layer.
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| WO2017128697A1 (en) * | 2016-01-29 | 2017-08-03 | Boe Technology Group Co., Ltd. | Organic thin film transistor, and fabricating method thereof |
| US10741767B2 (en) | 2016-01-29 | 2020-08-11 | Boe Technology Group Co., Ltd | Organic thin film transistor, and fabricating method thereof |
| CN106835078A (en) * | 2017-01-20 | 2017-06-13 | 陕西科技大学 | A kind of structure of trap Ag/TiO2The preparation method of/Au coatings |
| CN106835078B (en) * | 2017-01-20 | 2019-02-01 | 陕西科技大学 | A kind of structure of trap Ag/TiO2The preparation method of/Au coating |
| CN111106241A (en) * | 2019-12-06 | 2020-05-05 | 华东师范大学 | Application of polystyrene in radiation resistance of organic thin film transistor |
| CN111106241B (en) * | 2019-12-06 | 2023-11-10 | 华东师范大学 | Application of polystyrene in organic thin film transistor irradiation resistance |
| CN112820779A (en) * | 2020-12-31 | 2021-05-18 | 上海应用技术大学 | Thin film transistor and preparation method thereof |
| CN112820779B (en) * | 2020-12-31 | 2022-12-16 | 上海应用技术大学 | Thin film transistor and preparation method thereof |
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