CN105336880B - A kind of method that rubrene film is prepared based on double-deck inductive technology - Google Patents
A kind of method that rubrene film is prepared based on double-deck inductive technology Download PDFInfo
- Publication number
- CN105336880B CN105336880B CN201510691763.XA CN201510691763A CN105336880B CN 105336880 B CN105336880 B CN 105336880B CN 201510691763 A CN201510691763 A CN 201510691763A CN 105336880 B CN105336880 B CN 105336880B
- Authority
- CN
- China
- Prior art keywords
- film
- rubrene
- layer
- double
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention devises a kind of preparation method of double-deck induction rubrene film growth, rubrene film is induced to grow by increasing the number of plies of effective inducing layer, in the rubrene film of the high orderly, high crystalline of high-quality double-deck inducing layer Epitaxial growth, by regulating and controlling outer layer growth behavior, crystallinity and film microstructure, realize organic --- organic epitaxial growth relation, high orderly, the rubrene film of the heteromorphs of high crystalline is constructed, the purpose for improving its mobility is reached.
Description
Technical field
Technology of preparing is grown the present invention relates to rubrene film, belongs to organic optoelectronic technical field.
Background technology
Rubrene (benzene of Rubrene, CH, 5.6.11.12- tetraphenyl four) is used as a kind of organic semiconductor material of high mobility
Material, obtains people's extensive concern in recent years.Its monocrystalline mobility is up to 15-40cm in presently relevant report2/ Vs, is current
It was found that organic semiconductor in carrier mobility highest material.And rubrene has low sublimation temperature, in visible ray
Region has narrow absorption spectrum and very low absorption coefficient, therefore, red in the device research based on organic semiconducting materials
Glimmering alkene is considered as a kind of most potential semi-conducting material.But, correlative study is found, to prepare high-quality large area
Rubrene film is very difficult to.
At present, main thin film preparation process mainly has molecule epitaxial growth technology, vacuum evaporation, solution technique, soft print
Brush technology, physical gas phase deposition technology.And the advantage of vacuum evaporation is that technique is simple, it is more uniform to prepare film quality, multilayer
Film preparation is relatively easy, and rate of film build, efficiency are higher.Meanwhile, weak oriented epitaxial growth is then to utilize inducing layer
The epitaxial relationship existed between both material and the material that is grown on inducing layer lattice, obtains high-quality, large scale continuous
Crystalline film.The organic semiconductor thin-film grown using this method is respectively provided with orientation in larger area, improves film
The degree of order, the transmission of carrier is more they tended to Regularization.
Therefore, with reference to vacuum evaporation and weak oriented epitaxial growth, the present invention devises a kind of double-deck induction rubrene film
The preparation method of growth, i.e., induce rubrene film to grow by increasing the number of plies of effective inducing layer, lured in high-quality bilayer
Conducting shell Epitaxial growth is high in order, the rubrene film of high crystalline, by regulating and controlling outer layer growth behavior, crystallinity and film
Micro-structural, is realized organic --- organic epitaxial growth relation, the rubrene for constructing the high orderly, heteromorphs of high crystalline is thin
Film.Bilayer induction sets up epitaxial relationship in α -4 thiophene (α -4T) under the conditions of can realizing low temperature, flexibility between rubrene, together
When change film arrangement architecture, make epitaxial film realize it is high in order, high-flatness and order, from amorphous state to polycrystalline state mistake
Cross, inducing layer formation polycrystal film reaches the purpose for improving its mobility.
The content of the invention
The present invention is a kind of method that rubrene film is prepared based on double-deck inductive technology, in order to overcome rubrene
The film quality that occurs in film preparation is poor, complex process the problems such as.The present invention utilizes weak orientation using the method for vacuum evaporation
Epitaxial growth, rubrene film is prepared by double-deck inductive technology.
The present invention is a kind of method that rubrene film is prepared based on double-deck inductive technology.The present invention is achieved in that
As shown in figure 1, Si substrates (1), SiO2Insulating barrier (2), the first inducing layer of six biphenyl (p-6P) (3), α -4 thiophene (α -4T) second
Inducing layer (4), wherein rubrene active layer (5), substrate include Si substrates (1), SiO2Insulating barrier (2).Six biphenyl (p-6P)
There is weak orientation epitaxial relationship between one inducing layer (3), α -4 thiophene (α -4T) second inducing layer (4), rubrene active layer (5).
The equipment used combines preparation system for seven station OEL/EL optoelectronic films.
Brief description of the drawings
Fig. 1 is the rubrene membrane structure schematic diagram prepared based on double-deck inductive technology.
Embodiment
As shown in figure 1, Si substrates (1), SiO2Insulating barrier (2), the first inducing layer of the biphenyl of p-type six (p-6P) (3), α -4 thiophenes
Fen (α -4T) second inducing layer (4), rubrene active layer (5).Wherein, thickness of insulating layer is 300nm SiO2(2)。
Implement process：Substrate is by substrate Si (1) and its surface with SiO thick one layer of 300nm2(2) constitute；Will lining
Bottom is put into after cleaning up in the reative cell of seven station OEL/EL optoelectronic films joint preparation system；Reative cell vacuum is evacuated to small
In 6.0 × 10-4Pa；The vacuum evaporation first layer inducing layer p-6P (3) on substrate, underlayer temperature is 180 DEG C, and thickness is about 3nm；
Vacuum evaporation the second inducing layer α -4T (4) on the first inducing layer, underlayer temperature is 20 DEG C, and thickness is 30nm；Lured in the second layer
Vacuum evaporation one semiconductor layer rubrene (5) on conducting shell, underlayer temperature is 20 DEG C, and thickness is in 30nm.
Claims (1)
1. a kind of method that rubrene film is prepared based on double-deck inductive technology, implementation process is：Substrate is by substrate Si (1) and its
Surface is with SiO thick one layer of 300nm2(2) constitute；Seven station OEL/EL optoelectronic films joint is put into after substrate is cleaned up
In the reative cell of preparation system；Reative cell vacuum is evacuated to less than 6.0 × 10-4Pa；Vacuum evaporation first layer is induced on substrate
Layer p-6P (3), underlayer temperature is 180 DEG C, and thickness is 3nm；Vacuum evaporation the second inducing layer α -4T (4) on the first inducing layer,
Underlayer temperature is 20 DEG C, and thickness is 30nm；Vacuum evaporation one semiconductor layer rubrene (5), substrate on second layer inducing layer
Temperature is 20 DEG C, and thickness is 30nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510691763.XA CN105336880B (en) | 2015-10-23 | 2015-10-23 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510691763.XA CN105336880B (en) | 2015-10-23 | 2015-10-23 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105336880A CN105336880A (en) | 2016-02-17 |
| CN105336880B true CN105336880B (en) | 2017-09-12 |
Family
ID=55287282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510691763.XA Active CN105336880B (en) | 2015-10-23 | 2015-10-23 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105336880B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025101B (en) * | 2016-07-23 | 2017-08-08 | 长春工业大学 | A kind of method of the spherical rubrene crystal film of polymer inducing layer cosolvent regulation and control growth |
| CN107083530B (en) * | 2017-04-11 | 2019-02-05 | 长春工业大学 | A kind of method of graphene quantum dot chemical activity induced growth rubrene film |
| CN108461640B (en) * | 2018-03-16 | 2020-01-31 | 中国科学院长春应用化学研究所 | Crystalline organic electroluminescent diode and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154688A (en) * | 2011-03-25 | 2011-08-17 | 长春圣卓龙电子材料有限公司 | Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor |
| CN102560632A (en) * | 2010-12-21 | 2012-07-11 | 上海中科联和显示技术有限公司 | Solid solution inducing layer for weak epitaxial growth of non-planar phthalocyanin thin film |
| CN104316571A (en) * | 2014-11-10 | 2015-01-28 | 长春工业大学 | Preparation method of carbon nanotube-heterojunction organic gas sensor |
-
2015
- 2015-10-23 CN CN201510691763.XA patent/CN105336880B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560632A (en) * | 2010-12-21 | 2012-07-11 | 上海中科联和显示技术有限公司 | Solid solution inducing layer for weak epitaxial growth of non-planar phthalocyanin thin film |
| CN102154688A (en) * | 2011-03-25 | 2011-08-17 | 长春圣卓龙电子材料有限公司 | Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor |
| CN104316571A (en) * | 2014-11-10 | 2015-01-28 | 长春工业大学 | Preparation method of carbon nanotube-heterojunction organic gas sensor |
Non-Patent Citations (2)
| Title |
|---|
| 红荧烯多晶薄膜制备及晶体管性质;钱先锐;《中国博士学位论文全文数据库》;20141106;摘要 * |
| 高有序有机半导体薄膜的弱外延生长;黄丽珍;《中国博士学位论文全文数据库》;20111231;摘要 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105336880A (en) | 2016-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wu et al. | A Facile PDMS‐Assisted Crystallization for the Crystal‐Engineering of C60 Single‐Crystal Organic Field‐Effect Transistors | |
| US9306184B2 (en) | Ordered organic-organic multilayer growth | |
| CN105336880B (en) | A kind of method that rubrene film is prepared based on double-deck inductive technology | |
| JP2014515877A5 (en) | ||
| JP2011155249A5 (en) | Method for manufacturing semiconductor device | |
| JP2011135051A5 (en) | ||
| CN107109697B (en) | In the method and its application of the ultra-thin organic crystal layer of substrate surface epitaxial growth | |
| CN104037066B (en) | The method for defining polycrystalline silicon growth direction | |
| CN106410045A (en) | P-type HHMT transistor based on CH3NH3PbI3 material and manufacturing method thereof | |
| CN106784412A (en) | Flexible organic light emitting diode display and preparation method thereof | |
| WO2014153841A1 (en) | Manufacturing method of low-temperature polysilicon thin film and manufacturing method of thin-film transistor | |
| Kong et al. | Characterization of Cu (In, Ga) Se2 thin films prepared by RF magnetron sputtering using a single target without selenization | |
| Huang et al. | Heteroepitaxy growth high performance films of perylene diimide derivatives | |
| CN105385993B (en) | A kind of method prepared by orderly patterned growth of rubrene thin-film self-assembling | |
| Li et al. | Micrometer‐and Nanometer‐Sized, Single‐Crystalline Ribbons of a Cyclic Triphenylamine Dimer and Their Application in Organic Transistors | |
| KR101683127B1 (en) | Method of high-quality germanium films by graphene buffer layer | |
| CN109534285B (en) | ZnO nano column based on photonic structure seed layer and preparation method | |
| CN107723789B (en) | Low-temperature epitaxial preparation method of high-quality gray tin single crystal film | |
| CN106601926B (en) | Transparent inversion OLED device and preparation method thereof | |
| JPH01110776A (en) | Manufacture of semiconductor polycrystalline thin film | |
| US10053364B2 (en) | Heat treatment method and the product prepared therefrom | |
| KR101449278B1 (en) | Graphene growth method using semiconductor | |
| JP2011181698A (en) | Method and apparatus for fabricating organic single crystal thin film in magnetic field | |
| US8598151B2 (en) | Solid solution inducing layer for weak epitaxy growth of non-planar phthalocyanine | |
| CN106702320A (en) | Superconductor-insulator-metal heterogeneous two-dimension crystalline film material and preparing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Lijuan Inventor after: Yan Chuang Inventor after: Zhang Yuting Inventor after: Sun Lijing Inventor after: Wang Yong Inventor after: Li Zhanguo Inventor before: Wang Lijuan Inventor before: Zhang Yuting Inventor before: Sun Lijing Inventor before: Wang Yong Inventor before: Li Zhanguo |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |