CN105514039A - Method for optimizing organic thin film transistor devices based on inkjet printing technology - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 238000007641 inkjet printing Methods 0.000 title claims abstract description 25
- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000002904 solvent Substances 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 229920000642 polymer Polymers 0.000 claims abstract description 22
- 239000012212 insulator Substances 0.000 claims abstract description 19
- 238000009835 boiling Methods 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 27
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 26
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 239000011259 mixed solution Substances 0.000 claims description 21
- 238000005457 optimization Methods 0.000 claims description 18
- 239000002322 conducting polymer Substances 0.000 claims description 17
- 229920001940 conductive polymer Polymers 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- 238000001998 small-angle neutron scattering Methods 0.000 description 3
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000009304 pastoral farming Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2115/00—Details relating to the type of the circuit
- G06F2115/06—Structured ASICs
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Engineering & Computer Science (AREA)
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- Thin Film Transistor (AREA)
Abstract
The invention relates to a method for optimizing organic thin film transistor devices based on inkjet printing technology, which comprises a base, an active layer and a source drain electrode, wherein the base is a silicon wafer which is grown with a layer of silicon dioxide (SiO2) oxide layer, a mixture film of a semiconductor polymer and an insulator polymer is prepared and formed above the SiO2 oxide layer through a inkjet printing mode to be used as the active layer, and the source drain electrode is formed above the mixture firm through a thermal evaporation mode. The active layer is made by adopting an inkjet printing mode, the materials of the active layer is specially optimized and treated, and a high boiling blend solvent is added into a mixture solution of semiconductor polymers and insulator polymers before filming. The method for optimizing the organic thin film transistor devices based on the inkjet printing technology improves sequence degree of the semiconductor polymers and purity of phase to improve migration rate of holes of the semiconductor polymers, and is simple in process and rapid and accurate in operation, thereby being capable of obtaining a high performance organic thin film transistor (OTFT) device and an array. The high performance OTFT device has the advantages that the high performance OTFT device is high in current on/off ratio and hole mobility, simple in preparation process and low in cost.
Description
Technical field
The present invention relates to electronic material and device arts, particularly a kind of optimization method of the organic thin film transistor device based on inkjet technology.
Background technology
Thin-film transistor is generally used in Thin Film Transistor-LCD, and Thin Film Transistor-LCD (TFT-LCD) is is medium with liquid crystal, take thin-film transistor as the O-E Products integrating large-scale semiconductive integrated circuit technique and dull and stereotyped light source technology of control element.It is good that it has operating characteristic, has solidification, panelized, low-power consumption, and environmental protection characteristic is good, the automaticity high of manufacturing technology.TFT in TFT-LCD makes large-scale semiconductive integrated circuit on the non-single crystal substrate such as glass or plastics, is formed manufacture the required various films of circuit, by the processing and manufacturing circuit to film by film-forming process such as sputtering, chemical depositions.
But present mainstream technology many employings glass substrate makes the mode of inorganic TFT, be unfavorable for the flexibility of display device like this, and inorganic material needs the manufacturing conditions of high temperature mostly.And organic material is owing to having light weight, film is thin, and has good pliability, and all right large area " printing ", at any material surface, significantly reduces the advantages such as production cost and studied widely.Scientist has started trial organic semiconducting materials and has substituted inorganic material as conducting channel, forms novel thin film field-effect transistor (TFT).This novel thin film field-effect transistor (TFT) is different from conventional microelectronic device, and it has the advantages such as processing technology is simple, with low cost and flexible.
Prepared by OTFT for mode of printing, a kind of preparation method that inkjet printing is the most frequently used, the most popular now beyond doubt, but, when the solution of organic material is as marking ink, its OTFT prepared often has hole mobility and the not high performance shortcomings of on-off ratio and is unfavorable for practical application and mass production.
Summary of the invention
In view of this, the object of this invention is to provide a kind of optimization method of the organic thin film transistor device based on inkjet technology, the method by adding higher boiling point blend solvent in semi-conducting polymer and insulator polymer mixed solution before forming thin film, thus the purity improving the semi-conducting polymer degree of order and phase increases the mobility in its hole.
The present invention adopts following methods to realize: a kind of optimization method of the organic thin film transistor device based on inkjet technology, and described organic thin film transistor device is bottom gate top contact structure, comprises substrate, active layer and source-drain electrode; Wherein, described substrate comprises substrate, grid and insulating barrier; Described substrate is that a growth has one deck SiO
2the silicon chip of oxide layer, described silicon chip is not only as substrate but also as grid; Described grown above silicon has certain thickness SiO
2oxide layer is as insulating barrier; Described SiO
2oxide layer prepares the mixture film forming semiconductor polymer and insulator polymer by inkjet printing mode, described mixture film is as active layer; Made by thermal evaporation methods above described mixture film and form source-drain electrode.
Further, described source-drain electrode materials is gold, and the span of its thickness is 30nm to 50nm.
Further, described SiO
2the span of the thickness of oxide layer is 80nm to 320nm.
Further, the semi-conducting polymer that described active layer adopts and insulator polymeric material are through special optimization process, concrete grammar is: in the semi-conducting polymer taking chlorobenzene as solvent and insulator polymer mixed solution, mix appropriate high boiling solvent, use this mixed solution to prepare active layer by the mode of inkjet printing for ink.
Further, described high boiling solvent comprises chlorophenesic acid/1 and 8-diiodo-octane.
Further, the span of the thickness of described active layer is 20nm to 100nm.
Further, the preparation method of described organic thin film transistor device comprises the following steps:
Step S1: have the silicon chip of one deck SiO2 oxide layer for substrate to grow, it is distinguished ultrasonic 10 minutes in acetone, isopropyl alcohol, chloroform, and rear nitrogen dries up;
Step S2: semi-conducting polymer is dissolved in appropriate chlorobenzene with certain mass with insulator polymer after mixing;
Step S3: dissolve completely and mix appropriate high boiling solvent in mixed solution, and heating for dissolving is even;
Step S4: mixed solution is printed in substrate by the mode of inkjet printing;
Step S5: adopt the method for thermal evaporation to go out source-drain electrode pattern by mask plate special evaporation on this silicon chip.
Further, in the semi-conducting polymer described in described step S2 and insulator polymer mixed solution, the mass percent of insulator polymer is 10% to 30%.
Further, in described step S3, in described mixed solution, the percentage by volume of high boiling solvent is 10% to 30%.
Further, in described step S4, the condition of described inkjet printing is: the span of needle diameter is 40um to 80um, the span of driving voltage is 40V to 120V, the span of frequency is 800Hz to 1200Hz, the span of single liquor capacity is 150pl to 250pl, and the span of underlayer temperature is 60 degree to 100 degree.
Compared with prior art, remarkable advantage of the present invention and beneficial effect are: the OTFT device that the present invention makes, and its active layer adopts the mode of inkjet printing to prepare, and its technique is simple, and operation quick and precisely; And the organic solution of active layer used by inkjet printing is the higher boiling point blend solvent by adding proper proportion in semi-conducting polymer and insulator polymeric blends solution, thus the purity improving the semi-conducting polymer degree of order and phase increases the mobility in its hole and the current on/off ratio of transistor.
Accompanying drawing explanation
Fig. 1 is the structural representation of organic thin film transistor device in the present invention.Fig. 2 is the embodiment of the present invention 1, the 2 transfer characteristic curve figure tested out.
Fig. 3 is the embodiment of the present invention 1, the 2 grazing angle X ray diffracting spectrums tested out.
Fig. 4 is the embodiment of the present invention 2, the 3 transfer characteristic curve figure tested out.
Fig. 5 is the embodiment of the present invention 2, the 3 small-angle neutron scattering collection of illustrative plates tested out.
Description of symbols: 100 is silicon chip, and 110 is SiO
2oxide layer, 120 is the active layer prepared by inkjet printing mode after optimizing, and 130 is the source-drain electrode of gold copper-base alloy.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described.
The present embodiment provides a kind of optimization method of the organic thin film transistor device based on inkjet technology, and as shown in Figure 1, described organic thin film transistor device is bottom gate top contact structure, comprises substrate, active layer and source-drain electrode; Wherein, described substrate comprises substrate, grid and insulating barrier; Described substrate is that a growth has one deck SiO
2the silicon chip 100 of oxide layer 110, described silicon chip is not only as substrate but also as grid; Described grown above silicon there is certain thickness SiO
2oxide layer is as insulating barrier; Described SiO
2oxide layer prepares the mixture film forming semiconductor polymer and insulator polymer by inkjet printing mode, described mixture film is as active layer 120; Made by thermal evaporation methods above described mixture film and form described source-drain electrode 130.
In the present embodiment, described source-drain electrode materials is gold, and the span of its thickness is 30nm to 50nm.
In the present embodiment, described SiO
2the span of the thickness of oxide layer is 80nm to 320nm.
In the present embodiment, the semi-conducting polymer that described active layer adopts and insulator polymeric material are through special optimization process, concrete grammar is: in the semi-conducting polymer taking chlorobenzene as solvent and insulator polymer mixed solution, mix appropriate high boiling solvent, use this mixed solution to prepare active layer by the mode of inkjet printing for ink.
In the present embodiment, described high boiling solvent comprises chlorophenesic acid/1 and 8-diiodo-octane.
In the present embodiment, the span of the thickness of described active layer is 20nm to 100nm.
Below the invention provides preferred embodiment, but should not be considered to be only limitted to embodiment set forth herein.
At the schematic diagram that this reference diagram is idealized embodiments of the present invention, illustrated embodiment should not be considered to the given shape being only limitted to the region shown in figure.All represent with rectangle in the present embodiment, the expression in figure is schematic, but this should not be considered to limit the scope of the invention.
Below will be described in further detail the present invention by specific embodiment.
Embodiment 1
1) growth that size is about 1.5cm × 2.0cm has the heavily doped P-type silicon chip of 300nm thick silicon dioxide after the ultrasonic cleaning nitrogen such as acetone, isopropyl alcohol, chloroform dry up as substrate.
2) again silicon chip is carried out OTS process, concrete grammar is: first by 18 of 23ul, and octyltrichlorosilane is mixed and mixed in 10ml toluene, silicon chip is immersed in this mixed solution, and 60 degree of heating 30 minutes, rear toluene and isopropyl alcohol rinse respectively, then dry up with nitrogen.
3) semi-conducting polymer PDVT-8 is dissolved in chlorobenzene solvent with the proportioning of 10mg/ml, and at temperature is 80 DEG C, heats dissolving in 1 hour completely.With this solution for active layer material adopts inkjet printing mode to be printed on step 2) in gained silicon wafer-based at the bottom of on.The temperature of inkjet printing substrate is 80 DEG C, after having printed, and active layer material is heated 10 minutes at 150 ° of C.
4) mode of thermal evaporation is adopted to utilize mask plate special in step 3) evaporation goes out raceway groove long on the silicon chip of gained is 30um, and wide is the source-drain electrode of 1mm.
Embodiment 2
1) growth that size is about 1.5cm × 2.0cm has the heavily doped P-type silicon chip of 300nm thick silicon dioxide after the ultrasonic cleaning nitrogen such as acetone, isopropyl alcohol, chloroform dry up as substrate.
2) again silicon chip is carried out OTS process, concrete grammar is: first by 18 of 23ul, and octyltrichlorosilane is mixed and mixed in 10ml toluene, being immersed in by silicon chip changes in mixed solution, and 60 degree of heating 30 minutes, rear toluene and isopropyl alcohol rinse respectively, then dry up with nitrogen.
3) semi-conducting polymer PDVT-8 is dissolved in chlorobenzene solvent with the proportioning of 10mg/ml, and in this mixed solution, mixes polystyrene (molecular weight is 200,000), and at temperature is 80 DEG C, heat dissolving in 1 hour completely.With this solution for active layer material adopts inkjet printing mode to be printed on step 2) in gained silicon wafer-based at the bottom of on.The temperature of inkjet printing substrate is 80 DEG C, after having printed, and active layer material will be had to heat 10 minutes at 150 ° of C.
4) mode of thermal evaporation is adopted to utilize mask plate special in step 3) evaporation goes out raceway groove long on the silicon chip of gained is 30um, and wide is the source-drain electrode of 1mm.
The electricity transfer characteristic curve of OTFT prepared by embodiment 1 and embodiment 2 as shown in Figure 2.As shown in Figure 2, OTFT is after adding polystyrene, mobility has brought up to 0.60cm2V-1s-1. main cause as shown in Figure 3 from 0.12cm2V-1s-1: Fig. 3 is grazing angle X ray diffracting spectrum, after adding polystyrene, (010) diffraction maximum of organic semiconducting materials moves to right. the stacking distance of π-π of what (010) peak was corresponding is organic semiconducting materials, diffraction maximum moves to right and means that the stacking distance of π-π diminishes, this is conducive to the transmission of charge carrier, therefore obtains larger mobility.
Embodiment 3
1) growth that size is about 1.5cm × 2.0cm has the heavily doped P-type silicon chip of 300nm thick silicon dioxide after the ultrasonic cleaning nitrogen such as acetone, isopropyl alcohol, chloroform dry up as substrate.
2) again silicon chip is carried out OTS process, concrete grammar is: first by 18 of 23ul, and octyltrichlorosilane is mixed and mixed in 10ml toluene, being immersed in by silicon chip changes in mixed solution, and 60 degree of heating 30 minutes, rear toluene and isopropyl alcohol rinse respectively, then dry up with nitrogen.
3) semi-conducting polymer PDVT-8 is dissolved in chlorobenzene (CB) solvent with the proportioning of 10mg/ml, and (molecular weight is 200 to mix the polystyrene of 3mg in this mixed solution, 000), and at temperature is 80 DEG C, heat dissolving in 1 hour completely, after in mixed solution, mix chlorophenesic acid (CP) solvent of 0.2ml again, mix.With this solution for active layer material adopts inkjet printing mode to be printed on step 2) in gained silicon wafer-based at the bottom of on.The temperature of inkjet printing substrate is 80 DEG C, after having printed, and active layer material is heated 10 minutes at 150 ° of C.
4) mode of thermal evaporation is adopted to utilize mask plate special in step 3) evaporation goes out raceway groove long on the silicon chip of gained is 30um, and wide is the source-drain electrode of 1mm.
In thin film transistor (TFT) array prepared by embodiment 1 and embodiment 3, the electricity transfer characteristic curve of single transistor as shown in Figure 4.As shown in Figure 4, add chlorophenesic acid (CP) solvent of 20% in chlorobenzene (CB) solvent after, the mobility of OTFT has brought up to 1.44cm2V-1s-1. main cause as shown in Figure 5 further from 0.60cm2V-1s-1: Fig. 5 is small-angle neutron scattering collection of illustrative plates, add chlorophenesic acid (CP) solvent of 20% in chlorobenzene (CB) solvent after, the intensity of small-angle neutron scattering increases, the degree that is separated of organic semiconducting materials and polystyrene that this means strengthens further adding chlorophenesic acid (CP) solvent. and this contributes to semi-conducting material and forms continuous print passage, be conducive to the transmission of charge carrier, therefore larger mobility is obtained.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the present patent application the scope of the claims change and modify, and all should belong to covering scope of the present invention.
Claims (10)
1. based on an optimization method for the organic thin film transistor device of inkjet technology, it is characterized in that: described organic thin film transistor device is bottom gate top contact structure, comprise substrate, active layer and source-drain electrode; Wherein, described substrate comprises substrate, grid and insulating barrier; Described substrate is that a growth has one deck SiO
2the silicon chip of oxide layer, described silicon chip is not only as substrate but also as grid; Described grown above silicon has certain thickness SiO
2oxide layer is as insulating barrier; Described SiO
2oxide layer prepares the mixture film forming semiconductor polymer and insulator polymer by inkjet printing mode, described mixture film is as active layer; Made by thermal evaporation methods above described mixture film and form described source-drain electrode.
2. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 1, is characterized in that: described source-drain electrode materials is gold, and the span of its thickness is 30nm to 50nm.
3. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 1, is characterized in that: described SiO
2the span of the thickness of oxide layer is 80nm to 320nm.
4. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 1, it is characterized in that: the semi-conducting polymer that described active layer adopts and insulator polymeric material are through special optimization process, concrete grammar is: in the semi-conducting polymer taking chlorobenzene as solvent and insulator polymer mixed solution, mix appropriate high boiling solvent, use this mixed solution to prepare active layer by the mode of inkjet printing for ink.
5. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 1, is characterized in that: described high boiling solvent comprises chlorophenesic acid/1 and 8-diiodo-octane.
6. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 1, is characterized in that: the span of the thickness of described active layer is 20nm to 100nm.
7. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 1, is characterized in that: the preparation method of described organic thin film transistor device comprises the following steps:
Step S1: have one deck SiO to grow
2the silicon chip of oxide layer is substrate, and it is distinguished ultrasonic 10 minutes in acetone, isopropyl alcohol, chloroform, and rear nitrogen dries up;
Step S2: semi-conducting polymer is dissolved in appropriate chlorobenzene with certain mass with insulator polymer after mixing;
Step S3: dissolve completely and mix appropriate high boiling solvent in mixed solution, and heating for dissolving is even;
Step S4: mixed solution is printed in substrate by the mode of inkjet printing;
Step S5: adopt the method for thermal evaporation to go out source-drain electrode pattern by mask plate special evaporation on this silicon chip.
8. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 7, it is characterized in that: in the semi-conducting polymer described in described step S2 and insulator polymer mixed solution, the mass percent of insulator polymer is 10% to 30%.
9. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 7, is characterized in that: in described step S3, and in described mixed solution, the percentage by volume of high boiling solvent is 10% to 30%.
10. the optimization method of a kind of organic thin film transistor device based on inkjet technology according to claim 7, it is characterized in that: in described step S4, the condition of described inkjet printing is: the span of needle diameter is 40um to 80um, the span of driving voltage is 40V to 120V, the span of frequency is 800Hz to 1200Hz, the span of single liquor capacity is 150pl to 250pl, and the span of underlayer temperature is 60 degree to 100 degree.
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Cited By (6)
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| CN107771358A (en) * | 2015-06-12 | 2018-03-06 | 默克专利有限公司 | Organic electronic device with fluoropolymer horse structure |
| CN108288672A (en) * | 2018-01-16 | 2018-07-17 | 华东师范大学 | A kind of preparation method of Organic Thin Film Transistors |
| CN109900763A (en) * | 2019-03-07 | 2019-06-18 | 江苏友润微电子有限公司 | Nitrogen dioxide sensor chip based on organic transistor and preparation method thereof |
| CN112210246A (en) * | 2019-10-31 | 2021-01-12 | 天津大学 | Ink-jet printing ink and its application in preparing organic semiconductor single crystal film |
| CN112210249A (en) * | 2019-10-31 | 2021-01-12 | 天津大学 | Method for preparing organic semiconductor single crystal film |
| WO2023087353A1 (en) * | 2021-11-19 | 2023-05-25 | 惠州华星光电显示有限公司 | Transistor and method for manufacturing same |
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| CN109900763B (en) * | 2019-03-07 | 2021-06-25 | 江苏友润微电子有限公司 | Nitrogen dioxide sensor chip based on organic transistor and preparation method thereof |
| CN112210246A (en) * | 2019-10-31 | 2021-01-12 | 天津大学 | Ink-jet printing ink and its application in preparing organic semiconductor single crystal film |
| CN112210249A (en) * | 2019-10-31 | 2021-01-12 | 天津大学 | Method for preparing organic semiconductor single crystal film |
| WO2023087353A1 (en) * | 2021-11-19 | 2023-05-25 | 惠州华星光电显示有限公司 | Transistor and method for manufacturing same |
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