CN102487124A - Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method - Google Patents

Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method Download PDF

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CN102487124A
CN102487124A CN2011102900631A CN201110290063A CN102487124A CN 102487124 A CN102487124 A CN 102487124A CN 2011102900631 A CN2011102900631 A CN 2011102900631A CN 201110290063 A CN201110290063 A CN 201110290063A CN 102487124 A CN102487124 A CN 102487124A
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electric field
multilayer film
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electric
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CN102487124B (en
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韩秀峰
刘厚方
瑞之万
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Institute of Physics of CAS
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Priority to PCT/CN2012/001283 priority patent/WO2013040859A1/en
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Abstract

The invention provides an electric field regulation and control type nanometer multilayer film, an electric field modulation type field-effect tube, a switch type electric field sensor and an electric field driving type random access memory and a preparation method, so as to obtain an electroresistance effect in an electric field modulation multilayer thin film at room temperature. The nanometer multilayer film successively comprises a bottom layer 1, a substrate, a bottom layer 2, a functional layer, a buffer layer, an insulating layer, a middle conducting layer and a covering layer from bottom to top. When the middle conducting layer is a magnetic metal layer, a magnetic alloy layer or a magnetic metal composite layer, the buffer layer and the insulating layer can be selectively added according to actual requirements; and when the middle conducting layer is a nonmagnetic metal layer or an antiferromagnetism metal layer, the buffer layer and the insulating layer are obliged to be added so as to obtain a higher signal to noise ratio. According to the invention, the electric polarization characteristic of a ferroelectric or multiferroic material is modulated through variable electric fields, so as to achieve the effect of influencing and changing the conductivity of the metal layer, regulate and control changes of device resistance, obtain different resistance states corresponding to different electric fields, and realize the electroresistance effect.

Description

Nano-multilayer film, FET, transducer, random asccess memory and preparation method
Technical field
The invention belongs to ferroelectric or the multi-ferroic material field, specifically, relate to and a kind ofly send a telegraph inhibition effect (Electroresistance effect, multilayer film ER) by the reversible electricity of having of electric field driven.
Background technology
It is that the resistance of material produces obvious variation under extra electric field that electricity is sent a telegraph inhibition effect, shows as distinctive resistance-electric field curve.Utilize this effect to come the resistance of material is regulated and control through regulating extra electric field.When extra electric field be plus or minus to the time, the resistance of material shows as high or low resistance state.Electricity is sent a telegraph " 0 " and " 1 " two states in the just in time corresponding electronic information of high resistance and low resistance attitude of inhibition effect.Utilize this kind electricity to send a telegraph inhibition effect for this reason and can develop many electronic devices; Like electric field modulation type FET, switching mode electric-field sensor, electric field drive random asccess memory (Electric-field-switching Random Access Memory, the electronic device that ERAM) (is called for short electric random asccess memory) etc.(list of references: S.Rizwan and X.F.Han *Et al., CPL Vol.28, No.10 (2011) 107504).Generally speaking the electricity that this effect has been influenced electronics owing to the electric charge of non-shielding fully in the asymmetrical Potential Distributing that produces is at the interface led or the tunnelling electricity is led.Therefore, the electric field drive random asccess memory of sending a telegraph inhibition effect based on this kind electricity be different from random asccess memory based on phase transformation theory (phase-change random access memory, Phase-change Random Access Memory, PCRAM); Be different from based on the ferroelectric memory that is the basis with the ferroelectric capacitor effect (Ferroelectric Random Access Memory, FeRAM); Also be different from based on various metal-oxide films be storage medium unit and conductive channel (conductance filament channel) mechanism regulating thereof resistive random access memory (RRAM) (Resistance Random Access Memory, RRAM).
Ferroelectric material little by little becomes an important research direction of non-volatile random storage medium because but the self power generation of electric field regulation and control polarizes and other unique physical property at present.Yet a wherein most important aspect is the upset of the resistance that the electric polarization counter-rotating causes in ferroelectric tunnel junctions.The ferroelectric material of perovskite structure is because the application of distinctive electric polarization characteristic in microelectronic device such as nonvolatile memory, pyroelectricity detector, switching mode transducer causes everybody concern gradually again.How at room temperature obtaining bigger electricity, to send a telegraph inhibition effect be to realize that electricity sends a telegraph inhibition effect important key technology in actual spintronics device application.
Summary of the invention
The objective of the invention is to propose a kind of electric field regulation and control type nano-multilayer film, electric field modulation type FET, switching mode electric-field sensor and electric field drive random asccess memory and preparation method thereof.This electric field regulation and control type nano-multilayer film has significant reversible electricity and sends a telegraph inhibition effect and different Resistance states thereof.
Above-mentioned purpose of the present invention realizes through following technical scheme:
For realizing above-mentioned purpose, the present invention proposes a kind of electric field regulation and control type nano-multilayer film, comprises successively from the bottom to top:
Bottom;
Base substrate;
Resilient coating
The insulative barriers layer
Conductive layer;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Resilient coating is used on ferroelectric or multi-ferroic material, applying electric field as top electrode; Middle insulative barriers layer is an oxide; Top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized; Through between described bottom and resilient coating (upper/lower electrode), applying electric field; Because the electric polarization intensity size of base substrate (ferroelectric or multi-ferroic material) and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
Wherein, in the said nano-multilayer film, described bottom comprises conductive metallic material.
Wherein, in the said nano-multilayer film, described conductive layer comprises nonmagnetic metal layer, magnetic metallic layers, antiferromagnetic layer, electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.
Wherein, in the said nano-multilayer film, described nonmagnetic metal layer is by nonmagnetic metal or its alloy composition, and thickness is 2-100nm; Described magnetic metallic layers is processed by magnetic metal or its alloy, and thickness is 2-100nm or is processed by dilute magnetic semiconductor material or semi-metallic that thickness is 2-100nm; Described magnetic metallic layers comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
Wherein antiferromagnetic layer is made up of antiferromagnetic materials, and said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
Wherein, in the said nano-multilayer film, said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
Wherein, in the said nano-multilayer film, said top cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
And the present invention provides a kind of electric field modulation type nano-multilayer film, comprises successively from the bottom to top:
Base substrate;
Bottom;
Functional layer;
Resilient coating;
The insulative barriers layer;
Conductive layer;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Said functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Said resilient coating is used on ferroelectric or multiferroic film material, applying electric field as top electrode; The insulative barriers layer of said centre is an oxide; Said top cover layer is a protective layer; Prevent that intermediate conductive layer is oxidized; Through between described bottom and resilient coating (upper/lower electrode), applying electric field, owing to the electric polarization intensity size of functional layer (ferroelectric or multi-ferroic material) and the change of direction thereof, the face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
Wherein, in the said nano-multilayer film, described substrate comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate etc.
Wherein, in the said nano-multilayer film, described bottom comprises conductive metallic material.
Wherein, in the said nano-multilayer film, described functional layer comprises ferroelectric or many iron property nano thin-film, can deposit Seed Layer according to actual needs in advance, is used to optimize the interface with base substrate, improves the crystal structure of ferroelectric or many iron property nano thin-film.
Wherein, in the said nano-multilayer film, said conductive layer is grown in above the said insulative barriers layer material, and its electricity is led and can be received ferroelectric or the electric polarization intensity size of multiferroic film and the regulation and control of direction of bottom through electric polarization interaction or magneto-electric coupled effect.
Wherein, in the said nano-multilayer film, described conductive layer comprises nonmagnetic metal layer, magnetic metallic layers, antiferromagnetic layer, electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.
Wherein, in the said nano-multilayer film, described nonmagnetic metal layer is by nonmagnetic metal or its alloy composition, and thickness is 2-100nm; Described magnetic metallic layers is processed by magnetic metal or its alloy, and thickness is 2-100nm or is processed by dilute magnetic semiconductor material or semi-metallic that thickness is 2-100nm; Said magnetic metallic layers comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
Wherein, in the said nano-multilayer film, said antiferromagnetic layer is made up of antiferromagnetic materials, and said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
Wherein, in the said nano-multilayer film, said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
Wherein, in the said nano-multilayer film, said top cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
And the present invention reintroduces a kind of electric field regulation and control type nano-multilayer film, comprises successively from the bottom to top:
Bottom;
Base substrate;
Magnetosphere;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer is as top electrode and protective layer; Prevent that the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer (upper/lower electrode), applying electric field, because the electric polarization intensity size of base substrate (ferroelectric or multi-ferroic material) and the change of direction thereof, influence and change adjacent magnetospheric internal conductance; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
Wherein, in the said nano-multilayer film, described substrate comprises ferroelectric or the multi-ferroic material substrate.
Wherein, said magnetosphere can ideally be grown in above the base substrate material, and can interact with base substrate through magneto-electric coupled.Wherein, in the said nano-multilayer film, described magnetosphere is processed by feeromagnetic metal or its alloy, and thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
Wherein, in the said nano-multilayer film, described magnetosphere comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer)/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
Wherein, in the said nano-multilayer film, said antiferromagnetic layer is made up of antiferromagnetic materials, and said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
Wherein, in the said nano-multilayer film, said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm or is processed by dilute magnetic semiconductor material or semi-metallic that thickness is 2～100nm.
Wherein, in the said nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
And the present invention reintroduces a kind of electric field regulation and control type nano-multilayer film, comprises successively from the bottom to top:
Base substrate;
Bottom;
Functional layer
Magnetosphere;
Top cover layer;
Wherein said base substrate is non-ferroelectric or multi-ferroic material; Said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer (upper/lower electrode), applying electric field; Because the electric polarization intensity size of functional layer (ferroelectric or multiferroic film material) and the change of direction thereof; Influence and change adjacent metal and magnetospheric internal conductance; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
Wherein, in the said nano-multilayer film, described bottom comprises conductive metallic material.
Wherein, in the said nano-multilayer film, described substrate comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate etc.
Wherein, in the said nano-multilayer film, described functional layer comprises ferroelectric or many iron property nano thin-film.
Wherein, in the said nano-multilayer film, said magnetosphere is grown in above the material of said functional layer, and can interact with functional layer through magneto-electric coupled.
Wherein, in the said nano-multilayer film, described magnetosphere is processed by feeromagnetic metal or its alloy, and thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
Wherein, in the said nano-multilayer film, described magnetosphere comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
Wherein, in the said nano-multilayer film, said antiferromagnetic layer is made up of antiferromagnetic materials, and said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
Wherein, in the said nano-multilayer film, said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
Wherein, in the said nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
And the present invention proposes a kind ofly to send a telegraph the electric field modulation type FET of inhibition effect based on electricity, comprises above-mentioned electric field regulation and control type nano-multilayer film.
Wherein, through applying different voltages with different, between top cover layer (or resilient coating) and bottom, form certain electric field at grid; Between source electrode and drain electrode, apply certain voltage in addition; Because electricity is sent a telegraph the generation of inhibition effect, under different electric fields, the resistance of multilayer film is different; Cause from source electrode and lead difference, both can regulate and control from source electrode and lead or the size of resistance value to the electricity of drain electrode through grid voltage to the electricity of drain electrode.
And, the present invention also propose a kind of based on electricity send a telegraph inhibition effect the switching mode electric-field sensor, comprise above-mentioned electric field regulation and control type nano-multilayer film.
And; The present invention also propose a kind of based on electricity send a telegraph inhibition effect, promptly the nano-device with electric field regulation and control is electric field drive random asccess memory (the Electric-field-switching Random Access Memory of memory cell; ERAM) (be called for short electric random asccess memory), comprise above-mentioned electric field regulation and control type nano-multilayer film.
And; The present invention also proposes the preparation method of above-mentioned electric field regulation and control type nano-multilayer film, adopts magnetron sputtering and combines laser assistant depositing (PLD), molecular beam epitaxy (MBE), ald (ALD) or gas-phase chemical reaction deposition growing methods such as (MOCVD) on base substrate, to deposit bottom, resilient coating, insulative barriers layer, conductive layer and top cover layer successively; Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Resilient coating is used on ferroelectric or multi-ferroic material, applying electric field as top electrode; Middle insulative barriers layer is an oxide; Top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized; Through between described bottom and resilient coating (upper/lower electrode), applying electric field; Because the electric polarization intensity size of base substrate (ferroelectric or multi-ferroic material) and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
And; The present invention also proposes the preparation method of above-mentioned another kind of electric field regulation and control type nano-multilayer film, adopts magnetron sputtering and combines laser assistant depositing (PLD), molecular beam epitaxy (MBE), ald (ALD) or gas-phase chemical reaction deposition growing methods such as (MOCVD) to deposit bottom, functional layer, resilient coating, insulative barriers layer, conductive layer and top cover layer successively; Wherein said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Said functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Said resilient coating is used on ferroelectric or multiferroic film material, applying electric field as top electrode; The insulative barriers layer of said centre is an oxide; Said top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized.Through between described bottom and resilient coating (upper/lower electrode), applying electric field; Because the electric polarization intensity size of functional layer (ferroelectric or multi-ferroic material) and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
And; The present invention reintroduces a kind of preparation method of above-mentioned electric field regulation and control type nano-multilayer film, adopts magnetron sputtering and combines laser assistant depositing (PLD), molecular beam epitaxy (MBE), ald (ALD) or gas-phase chemical reaction deposition growing methods such as (MOCVD) on base substrate, to deposit bottom, magnetosphere and top cover layer successively; Wherein, said bottom is an electric conducting material, is used on base substrate, applying electric field as bottom electrode, and base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized.Through between described bottom and top cover layer (upper/lower electrode), applying electric field; Because the electric polarization intensity size of base substrate (ferroelectric or multi-ferroic material) and the change of direction thereof; Influence and change adjacent magnetospheric internal conductance; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
And; The present invention proposes a kind of preparation method of electric field regulation and control type nano-multilayer film again, adopts magnetron sputtering and combines laser assistant depositing (PLD), molecular beam epitaxy (MBE), ald (ALD) or gas-phase chemical reaction deposition growing methods such as (MOCVD) on base substrate, to deposit bottom, functional layer, magnetosphere and top cover layer successively; Wherein said base substrate is non-ferroelectric or multi-ferroic material; Said bottom is an electric conducting material; Be used on functional layer, applying electric field as bottom electrode; Said functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized.Through between described bottom and top cover layer (upper/lower electrode), applying electric field; Because the electric polarization intensity size of functional layer (ferroelectric or multi-ferroic material) and the change of direction thereof; Influence and change adjacent magnetospheric internal conductance; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
The present invention modulates the electric polarization characteristic of ferroelectric or multi-ferroic material through the electric field that changes; The electricity of influence and change conductive layer is led; Further regulate and control device changes in resistance (promptly through electric field regulation and control changes in resistance), thereby obtain the corresponding different Resistance states of different electric fields.
Description of drawings
Fig. 1 a is a nano-multilayer film structural representation of the present invention;
Fig. 1 b is structure A:BOL 1/SUB/B FL/ISO/NM (or FM, or AFM)/CAP;
Fig. 1 c is structure B:SUB/BOL 2/FCL/ISO/NM (or FM, or AFM)/CAP;
Fig. 1 d is a structure C: SUB/BOL 2/FCL/BFL/ISO/NM (or FM, or AFM)/CAP;
Fig. 1 e is structure D:SUB/BOL 2/FCL/FM1/NM/FM2/AFM/CAP;
Fig. 1 f is structure E:SUB/BOL 2/FCL/FM/AFM/CAP;
Fig. 1 g is structure F:SUB/BOL 2/FCL/FM1/NM/FM2/CAP;
Fig. 1 h is structure G:SUB/BOL 2/FCL/FM/CAP;
Fig. 1 i structure H:BOL 1/SUB/FM1/NM/FM2/AFM/CAP;
Fig. 1 j is a structure I: BOL 1/SUB/FM/AFM/CAP;
Fig. 1 k is structure J:BOL 1/SUB/FM1/NM/FM2/CAP;
Fig. 1 l is structure K:BOL1/SUB/FM/CAP;
Fig. 2 a is the structural representation of the nano-multilayer film of the embodiment of the invention 1;
Fig. 2 b is that device resistance R is with extra electric field E variation relation sketch map.
The structural representation of the nano-multilayer film of Fig. 3 a embodiment of the invention 2;
Fig. 3 b is that intermediate conductive layer is magnetic metal Co 75Fe 25Device resistance R with extra electric field E variation relation sketch map;
Fig. 3 c is that intermediate conductive layer is Co 75Fe 25, add the electric field E of variation and the measurement result sketch map of nano-multilayer film resistance R, and when measuring, apply the magnetic field of 1kOe;
Fig. 3 d is that intermediate conductive layer is the Al film of 5nm, adds the electric field E of variation and the measurement result sketch map of nano-multilayer film resistance R;
Fig. 3 e is that intermediate conductive layer is the antiferromagnetic alloy firm of IrMn of 5nm, adds the electric field E of variation and the measurement result sketch map of nano-multilayer film resistance R;
Fig. 4 a is according to the electric field modulation type FET schematic diagram that is the basis with the nanometer multilayer membrane structure among Fig. 1 a in the embodiment of the invention 3;
Fig. 4 b is according to the electric field modulation type FET schematic diagram that is the basis with the nanometer multilayer membrane structure among Fig. 1 a in the embodiment of the invention 4.
Fig. 4 c is according to the electric field modulation type FET schematic diagram that is the basis with the nanometer multilayer membrane structure among Fig. 1 a in the embodiment of the invention 5.
Fig. 4 d is according to the electric field modulation type FET schematic diagram that is the basis with the nanometer multilayer membrane structure among Fig. 1 a in the embodiment of the invention 6.
Fig. 4 e is according to the electric field modulation type FET schematic diagram that is the basis with the nanometer multilayer membrane structure among Fig. 1 a in the embodiment of the invention 7.
Fig. 4 f is according to the electric field modulation type FET schematic diagram that is the basis with the nanometer multilayer membrane structure among Fig. 1 a in the embodiment of the invention 8.
Fig. 5 a is for exemplifying embodiment 3 is electric field drive random asccess memory (Electric-field-switching Random Access Memory, ERAM) principle schematic of memory cell with the nano-device among Fig. 1 a for design principle according to the present invention; Fig. 5 b is for exemplifying embodiment 4 is electric field drive random asccess memory (Electric-field-switching Random Access Memory, ERAM) principle schematic of memory cell with the nano-device among Fig. 1 a for design principle according to the present invention;
Fig. 5 c is for exemplifying embodiment 5 is electric field drive random asccess memory (Electric-field-switching Random Access Memory, ERAM) principle schematic of memory cell with the nano-device among Fig. 1 a for design principle according to the present invention;
Fig. 5 d is for exemplifying embodiment 6 is electric field drive random asccess memory (Electric-field-switching Random Access Memory, ERAM) principle schematic of memory cell with the nano-device among Fig. 1 a for design principle according to the present invention;
Fig. 5 e is for exemplifying embodiment 7 is electric field drive random asccess memory (Electri c-fi eld-switching Random Access Memory, ERAM) principle schematic of memory cell with the nano-device among Fig. 1 a for design principle according to the present invention;
Fig. 5 f is for exemplifying embodiment 8 is electric field drive random asccess memory (Electric-field-switching Random Access Memory, ERAM) principle schematic of memory cell with the nano-device among Fig. 1 a for design principle according to the present invention.
Embodiment
The objective of the invention is to propose a kind of electric field regulation and control type nano-multilayer film, electric field modulation type FET, switching mode electric-field sensor and electric field drive random asccess memory; Send a telegraph inhibition effect to be used at room temperature obtaining novel reversible electricity in the electric field regulation and control nano-multilayer film, and realize that reversible electricity sends a telegraph the application of inhibition effect in electronic device.
This nano-multilayer film comprises from the bottom to top successively: bottom, substrate, bottom, functional layer, resilient coating, insulative barriers layer, intermediate conductive layer, cover layer; When wherein said intermediate conductive layer was magnetic metal, magnetic alloy or magnetic metal composite, resilient coating and insulating barrier can optionally add according to actual needs.Described intermediate conductive layer comprises metal level, electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.Said metal level comprises nonmagnetic metal layer, magnetic metallic layers, antiferromagnetic layer etc.When described intermediate conductive layer nonmagnetic metal layer or antiferromagnetic layer, resilient coating and insulative barriers layer must add, so that obtain higher signal to noise ratio.
First aspect of the present invention provides a kind of electric field regulation and control type nano-multilayer film, comprises successively from the bottom to top:
Bottom;
Base substrate;
Resilient coating
The insulative barriers layer
Conductive layer;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on base substrate, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Resilient coating is for to be used on ferroelectric or multi-ferroic material, applying electric field as top electrode; Intermediate insulating layer is an oxide; Top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized.Through between described bottom and resilient coating (upper/lower electrode), applying electric field; Because the electric polarization intensity size of base substrate (ferroelectric or multi-ferroic material) and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
In above-mentioned nano-multilayer film, described bottom comprises conductive metallic material;
In above-mentioned nano-multilayer film, described substrate comprises ferroelectric or the multi-ferroic material substrate;
In above-mentioned nano-multilayer film, described resilient coating can improve the interface of base substrate and multilayer film, can be used as top electrode and is used on ferroelectric or multiferroic film material, applying electric field;
In above-mentioned nano-multilayer film, said conductive layer can ideally be grown in above the insulative barriers layer, and its electricity is led and can be received ferroelectric or the electric polarization intensity size of multiferroic film and the regulation and control of direction of bottom through electric polarization interaction or magneto-electric coupled effect.
In above-mentioned nano-multilayer film, described conductive layer comprises nonmagnetic metal layer, magnetic metallic layers, antiferromagnetic layer, electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.;
In above-mentioned nano-multilayer film, described nonmagnetic metal layer is by nonmagnetic metal or its alloy composition, and thickness is 2-100nm;
In above-mentioned nano-multilayer film, described intermediate conductive layer is to form for electroconductive molecule material, topological insulating material or conductive doped semi-conducting material.
In above-mentioned nano-multilayer film, described magnetic metallic layers is processed by magnetic metal or its alloy, and thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
In above-mentioned nano-multilayer film, described magnetic metallic layers comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer (AFM)/ferromagnetic layer (FM); The pinning structure comprises antiferromagnetic layer (AFM)/first ferromagnetic layer (FM1)/non-magnetic metal layer (NM)/second ferromagnetic layer (FM2) indirectly.
In above-mentioned nano-multilayer film, said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
In above-mentioned nano-multilayer film, said ferromagnetic layer (FM), first ferromagnetic layer (FM1) and second ferromagnetic layer (FM2) are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
In above-mentioned nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
Second aspect of the present invention provides a kind of electric field modulation type nano-multilayer film, comprises successively from the bottom to top:
Base substrate;
Bottom;
Functional layer
Resilient coating
The insulative barriers layer
Conductive layer;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Resilient coating is used on ferroelectric or multiferroic film material, applying electric field as top electrode; Intermediate insulating layer is an oxide; Top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized.Through between described bottom and resilient coating (upper/lower electrode), applying electric field.Because the electric polarization intensity size of functional layer (ferroelectric or multi-ferroic material) and the change of direction thereof, the face internal conductance of influence and change adjacent conductive layer can obtain the different after the match Resistance states of different electric, causes reversible electricity to send a telegraph the generation of inhibition effect.
In above-mentioned nano-multilayer film, described substrate comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate etc.
In above-mentioned nano-multilayer film, described bottom comprises conductive metallic material.
In above-mentioned nano-multilayer film, described functional layer comprises ferroelectric or many iron property nano thin-film, can deposit Seed Layer according to actual needs in advance, is used to optimize the interface with base substrate, improves the crystal structure of ferroelectric or many iron property nano thin-film.
In above-mentioned nano-multilayer film, described resilient coating can improve the interface of insulative barriers layer and functional layer, can be used as top electrode and is used on ferroelectric or multiferroic film material, applying electric field.
In above-mentioned nano-multilayer film; Said conductive layer can ideally be grown in above the insulative barriers layer, and its electricity is led (resistance) and enough received ferroelectric or the electric polarization intensity size of multiferroic film and the regulation and control of direction of bottom through electric polarization interaction or magneto-electric coupled effect.
In above-mentioned nano-multilayer film, described conductive layer comprises nonmagnetic metal layer, magnetic metallic layers, antiferromagnetic layer, electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.
In above-mentioned nano-multilayer film, described nonmagnetic metal layer is by nonmagnetic metal or its alloy composition, and thickness is 2-100nm.
In above-mentioned nano-multilayer film, described intermediate conductive layer is to form for electroconductive molecule material, topological insulating material or conductive doped semi-conducting material.
In above-mentioned nano-multilayer film, described magnetic metallic layers is processed by magnetic metal or its alloy, and thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
In above-mentioned nano-multilayer film, described magnetic metallic layers comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer (AFM)/ferromagnetic layer (FM); The pinning structure comprises antiferromagnetic layer (AFM)/first ferromagnetic layer (FM1)/non-magnetic metal layer (NM)/second ferromagnetic layer (FM2) indirectly.
In above-mentioned nano-multilayer film, said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
In above-mentioned nano-multilayer film, said ferromagnetic layer (FM), first ferromagnetic layer (FM1) and second ferromagnetic layer (FM2) are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
In above-mentioned nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
According to a third aspect of the present invention, a kind of electric field regulation and control type nano-multilayer film is provided, comprises successively from the bottom to top:
Bottom
Base substrate;
Magnetosphere;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized.Through between described bottom and top cover layer (upper/lower electrode), applying electric field; Because the electric polarization intensity size of base substrate (ferroelectric or multi-ferroic material) and the change of direction thereof; Influence and change adjacent magnetospheric internal conductance; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of resistance.
In above-mentioned nano-multilayer film, described substrate comprises ferroelectric or the multi-ferroic material substrate.
In above-mentioned nano-multilayer film; Said magnetosphere can ideally be grown in above the base substrate material, and its electricity is led and can be received ferroelectric or the electric polarization intensity size of multiferroic film and the regulation and control of direction of bottom through electric polarization interaction or magneto-electric coupled effect.
In above-mentioned nano-multilayer film, described magnetosphere is processed by feeromagnetic metal or its alloy, and thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
In above-mentioned nano-multilayer film, described magnetosphere comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer (AFM)/ferromagnetic layer (FM); The pinning structure comprises antiferromagnetic layer (AFM)/first ferromagnetic layer (FM1)/non-magnetic metal layer (NM)/second ferromagnetic layer (FM2) indirectly.
In above-mentioned nano-multilayer film, said antiferromagnetic layer is processed by antiferromagnetic materials, and said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
In above-mentioned nano-multilayer film, said ferromagnetic layer (FM), first ferromagnetic layer (FM1) and second ferromagnetic layer (FM2) are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
In above-mentioned nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
The 4th aspect of the present invention provides a kind of electric field regulation and control type nano-multilayer film, comprises successively from the bottom to top:
Base substrate;
Bottom;
Functional layer
Magnetosphere;
Top cover layer;
Wherein said base substrate is non-ferroelectric or multi-ferroic material; Said bottom is an electric conducting material; Be used on functional layer, applying electric field as bottom electrode; Functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized.Through between described bottom and top cover layer (upper/lower electrode), applying electric field; Because the electric polarization intensity size of functional layer (ferroelectric or multiferroic film material) and the change of direction thereof; Influence and change adjacent metal and magnetospheric internal conductance; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
In above-mentioned nano-multilayer film, described bottom comprises conductive metallic material.
In above-mentioned nano-multilayer film, described substrate comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate etc.
In above-mentioned nano-multilayer film, described functional layer comprises ferroelectric or many iron property nano thin-film.
In above-mentioned nano-multilayer film; Said magnetosphere can ideally be grown in above the material of functional layer, and its electricity is led and can be received ferroelectric or the electric polarization intensity size of multiferroic film and the regulation and control of direction of bottom through electric polarization interaction or magneto-electric coupled effect.
In above-mentioned nano-multilayer film, described magnetosphere is processed by feeromagnetic metal or its alloy, and thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
In above-mentioned nano-multilayer film, described magnetosphere comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer (AFM)/ferromagnetic layer (FM); The pinning structure comprises antiferromagnetic layer (AFM)/first ferromagnetic layer (FM1)/non-magnetic metal layer (NM)/second ferromagnetic layer (FM2) indirectly.
In above-mentioned nano-multilayer film, said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
In above-mentioned nano-multilayer film, said ferromagnetic layer (FM), first ferromagnetic layer (FM1) and second ferromagnetic layer (FM2) are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
In above-mentioned nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
The 5th aspect of the present invention provides a kind of electric field modulation type FET of sending a telegraph inhibition effect based on electricity.The described electric field regulation and control in first, second, third and fourth aspect type nano-multilayer film according to the present invention through applying different voltages with different at grid, forms certain electric field between top cover layer and bottom.Between source electrode and drain electrode, apply certain voltage in addition, because electricity is sent a telegraph the generation of inhibition effect, under different electric fields, the resistance of multilayer film is different, causes from source electrode and leads difference to the electricity of drain electrode.Therefore, can regulate and control from source electrode through grid voltage and lead or the size of resistance value to the electricity of drain electrode.
The 6th aspect of the present invention provides a kind of switching mode electric-field sensor of sending a telegraph inhibition effect based on electricity.According to the described electric field regulation and control in first, second, third and fourth aspect of the present invention type nano-multilayer film, make that the electricity of nano-multilayer film is sent a telegraph resistance and can be changed when under External Electrical Field, thus the corresponding high low resistance output characteristic of acquisition.
The 7th aspect of the present invention; Provide a kind of based on electricity send a telegraph inhibition effect, promptly be that (Electric-field-switching Random Access Memory ERAM) (is called for short electric random asccess memory) for the electric field drive random asccess memory of memory cell with the nano-device of electric field regulation and control.
Eight aspect of the present invention proposes a kind of preparation method of electric field regulation and control type nano-multilayer film, adopts magnetron sputtering and combines laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method to deposit bottom, resilient coating, insulative barriers layer, conductive layer and top cover layer successively; Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Resilient coating is used on ferroelectric or multi-ferroic material, applying electric field as top electrode; Middle insulative barriers layer is an oxide; Top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized; Through between described bottom and resilient coating, applying electric field; Because the electric polarization intensity size of base substrate and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer can obtain the different after the match Resistance states of different electric, causes reversible electricity to send a telegraph the generation of inhibition effect.
The 9th aspect of the present invention proposes the preparation method of another kind of a kind of electric field regulation and control type nano-multilayer film, adopts magnetron sputtering and combines laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method on base substrate, to deposit bottom, functional layer, resilient coating, insulative barriers layer, conductive layer and top cover layer successively; Wherein said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Said functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Said resilient coating is used on ferroelectric or multiferroic film material, applying electric field as top electrode; The insulative barriers layer of said centre is an oxide; Said top cover layer is a protective layer; Prevent that intermediate conductive layer is oxidized; Through between described bottom and resilient coating, applying electric field, owing to the electric polarization intensity size of functional layer and the change of direction thereof, the face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
The tenth aspect of the present invention proposes the preparation method of another electric field regulation and control type nano-multilayer film, adopts magnetron sputtering and combines laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method on base substrate, to deposit bottom, magnetosphere and top cover layer successively; Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer is as top electrode and protective layer; Prevent that the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer, applying electric field, owing to the electric polarization intensity size of base substrate and the change of direction thereof, the face internal conductance of influence and change adjacent metal (magnetosphere); Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
The of the present invention the tenth proposes the preparation method of another electric field regulation and control type nano-multilayer film on the one hand, adopts magnetron sputtering and combines laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method on base substrate, to deposit bottom, functional layer, magnetosphere and top cover layer successively; Wherein said base substrate is non-ferroelectric or multi-ferroic material; Said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer, applying electric field; Because the electric polarization intensity size of functional layer and the change of direction thereof; The face internal conductance of influence and change adjacent metal (magnetosphere) can obtain the different after the match Resistance states of different electric, causes reversible electricity to send a telegraph the generation of inhibition effect.
Fig. 1 a illustrates the nano-multilayer film according to the embodiment of the invention, and it comprises from the bottom to top successively: bottom 102 (abbreviating BOL 1 as), substrate 101 (abbreviating SUB as), bottom 103 (abbreviating BOL 2 as), functional layer 104 (abbreviating FCL as), resilient coating 105 (abbreviating BFL as), insulating barrier 106 (abbreviating ISO as), intermediate conductive layer 107 (abbreviating IML as), cover layer 108 (abbreviating CAP as).Below to each the layer be elaborated.
Substrate 101 is ferroelectric or many iron property substrate, or general substrate comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate etc.
In above-mentioned base substrate, substrate 101 is ferroelectric or many iron property substrate, comprises Pb (Mg 1/3Nb 2/3) O 3-PbTiO 3(PMN-PT), BiFeO 3(BFO), BaTiO 3, Pb (Zn 1/3Nb 2/3) O 3-PbTiO 3(PZN-PT), PbTiO 3(PTO), SrTiO 3(STO), BiMnO 3Etc. ferroelectric or many iron property substrate, thickness is 0.1～1mm.
In above-mentioned nano-multilayer film, described substrate is general substrate, comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate etc., thickness is 0.1～1mm.
In above-mentioned nano-multilayer film, bottom 102 is a conductive metal layer.This conductive metal layer generally adopts Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or its alloy to make, and thickness is 2.0～100nm.
In nano-multilayer film, bottom 103 is a conductive metal layer.This conductive metal layer generally adopts Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or its alloy to make, and thickness is 2.0～100nm
Functional layer is 104 for ferroelectric or multiferroic film.This ferroelectric or multiferroic film generally comprises Pb (Mg 1/3Nb 2/3) O 3-PbTiO 3(PMN-PT), BiFeO 3(BFO), BaTiO 3(BTO), PbTiO 3(PTO), SrTiO 3(STO), BiMnO 3Deng, thickness is 5-500nm; Relatively good and tightr for the assurance function layer with the base substrate combination, can deposit SrRuO in advance 3, TiO 2Etc. Seed Layer.
Resilient coating 105 is general to adopt conductivity relatively good and combine non-magnetic metal layer (comprising individual layer or multilayer) more closely with substrate; The preferred Ta of its material, Ru, Cr, Au, Ag, Pt, Pd, Cu, CuN etc.; Can be metal alloy or metal composite layer also, thickness can be 2.0～100nm.
Insulating barrier 106 is generally AlO x, MgO, Mg 1-xZn xO, AlN, Ta 2O 5, MgAlO x, ZnO, MgSiO x, SiO 2, HfO 2, TiO 2, material such as Alq3, LB organic compound film, GaAs, AlGaAs, InAs, preferred MgO, AlOx, MgZnO, AlN and Alq3, LB organic compound film, thickness generally is being 0.5～10nm.
Intermediate conductive layer 107 is to be ferromagnetic metal, or directly pinning structure or pinning structure indirectly." directly pinning " is meant that antiferromagnet layer AFM directly contacts (being abbreviated as AFM/FM) with ferromagnetic layer FM, and " pinning indirectly " is meant and between the two, inserts composite bed NM/FM (being abbreviated as FM1/NM/FM2/AFM).
In above-mentioned magnetosphere 107, feeromagnetic metal comprises spin polarizability than higher ferromagnetic metal, preferred Co, Fe, Ni; The perhaps alloy firm of these ferromagnetic metals, preferred Co-Fe, Co-Fe-B, NiFeCr or Ni-Fe (as: Ni 81Fe 19, Co 75Fe 25) to wait ferromagnetic alloy, thickness be 2.0～100nm; Or such as dilute magnetic semiconductor materials such as GaMnAs, Ga-Mn-N, or such as Co-Mn-Si, Co-Fe-Al, Co-Fe-Si, Co-Mn-Al, Co-Fe-Al-Si, Co-Mn-Ge, Co-Mn-Ga, Co-Mn-Ge-Ga, La 1-xSr xMnO 3, La 1-xCa xMnO 3Semi-metallics such as (wherein 0＜X＜1), thickness is 2.0～100nm.
In above-mentioned magnetosphere 107, antiferromagnetic layer AFM comprises having anti-ferromagnetic alloy material, preferred Pt-Mn, Ir-Mn, Fe-Mn and Ni-Mn, and thickness is 5～50nm; Or have anti-ferromagnetic oxide, and preferred CoO, NiO, thickness is 5～50nm.Ferromagnetic layer FM adopts spin polarizability than higher ferromagnetic metal, preferred Co, Fe, Ni; The perhaps alloy firm of these ferromagnetic metals, preferred Co-Fe, Co-Fe-B, NiFeCr or Ni-Fe (as: Ni 81Fe 19, Co 75Fe 25) to wait ferromagnetic alloy, thickness be 2.0～100nm; Or such as dilute magnetic semiconductor materials such as GaMnAs, Ga-Mn-N, or such as Co-Mn-Si, Co-Fe-Al, Co-Fe-Si, Co-Mn-Al, Co-Fe-Al-Si, Co-Mn-Ge, Co-Mn-Ga, Co-Mn-Ge-Ga, La 1-xSr xMnO 3, La 1-xCa xMnO 3Semi-metallics such as (wherein 0＜X＜1), thickness is 2.0～100nm.The ultra-thin non-magnetic metal layer NM that is inserted between ferromagnetic layer FM and the antiferromagnetic layer AFM generally adopts Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or its alloy to make, and thickness is 0.1～5nm.
At above-mentioned intermediate conductive layer is to be the reasonable non-magnetic metal layer of conductivity (comprising individual layer or multilayer composite metal film).The preferred Ta of its material, Cu, Ti, Ru, Au, Ag, Pt, Al, Cr, V, W, Nb etc., thickness is 2.0～100nm.
At above-mentioned intermediate conductive layer is to be the antiferromagnetism metal level.The preferred IrMn of its material, FeMn, PtMn, NiMn, thickness are 5～50nm.Or have anti-ferromagnetic oxide, and preferred CoO, NiO etc., thickness is 5～50nm.
At above-mentioned intermediate conductive layer is to be electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.Electric conducting materials such as the preferred Graphene of its material, doped polyacetylene, Sb, Bi-Te, Bi-Se, Sb-Te.
Cover layer 108 is for being difficult for metal level (comprising individual layer or multilayer composite metal film) oxidized and that conductivity is reasonable; The preferred Ta of its material, Cu, Ti, Ru, Au, Ag, Pt etc.; Thickness is 2.0～200nm, is used to protect the not oxidized and corrosion of core texture.
Therefore, magnetic Nano multi-layer film structure of the present invention includes but not limited to:
Structure A:BOL 1/SUB/B FL/ISO/NM (or FM, or AFM)/CAP (Fig. 1 b);
Structure B:SUB/BOL 2/FCL/ISO/NM (or FM, or AFM)/CAP (Fig. 1 c);
Structure C: SUB/BOL 2/FCL/BFL/ISO/NM (or FM, or AFM)/CAP (Fig. 1 d);
Structure D:SUB/BOL 2/FCL/FM1/NM/FM2/AFM/CAP (Fig. 1 e);
Structure E:SUB/BOL 2/FCL/FM/AFM/CAP (Fig. 1 f);
Structure F:SUB/BOL 2/FCL/FM1/NM/FM2/CAP (Fig. 1 g);
Structure G:SUB/BOL 2/FCL/FM/CAP (Fig. 1 h);
Structure H:BOL 1/SUB/FM1/NM/FM2/AFM/CAP (Fig. 1 i);
Structure I: BOL 1/SUB/FM/AFM/CAP (Fig. 1 j);
Structure J:BOL 1/SUB/FM1/NM/FM2/CAP (Fig. 1 k);
Structure K:BOL1/SUB/FM/CAP (Fig. 1 l);
Example 1:
On magnetron sputtering apparatus, be superior to 2 * 10 with vacuum -6Pa, deposition rate is 0.06nm/s, Ar Pressure is the condition of 0.07Pa, directly growth 5nm Co on (001)-PMN-PT ferroelectric oxide substrate 75Fe 25As magnetosphere.Then at 5nm Co 75Fe 25Directly deposit 6nm Ta on the magnetosphere as top cover layer, prevent Co 75Fe 25Magnetospheric oxidation.Then the nano-multilayer film that obtains is put into magnetron sputtering apparatus, vacuum is superior to 2 * 10 -5Pa, deposition rate is 10nm/min, Ar Pressure is 0.1Pa, at the Au film of the tectal deposited on top 100nm of 6nm Ta, in order to the preparation top electrodes.Directly deposit 10nm Cr, 100nmAu film as the back bottom electrode, so that apply electric field at the back of (001)-PMN-PT ferroelectric oxide substrate base at last.
Between the Au film of contact electrode and (001)-PMN-PT ferroelectric oxide substrate base lower surface, apply (8kV/cm) to the electric field of 8kV/cm, shown in Fig. 2 a; Fig. 2 b is the measurement result sketch map of the resistance that between the Au film of contact electrode and (001)-PMN-PT ferroelectric oxide substrate base lower surface, applies the electric field E that adds variation and nano-multilayer film.
Example 2:
On magnetron sputtering apparatus, be superior to 1 * 10 with vacuum -6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa during deposition, on (001)-PMN-PT ferroelectric oxide substrate base, deposits Ta (5nm) resilient coating (BFL).On magnetron sputtering apparatus, be superior to 2 * 10 then with vacuum -6Pa, deposition rate is 0.07nm/s, and Ar Pressure is the condition of 0.07Pa, and directly deposit thickness is the AlO of 1.0nm on resilient coating Ta xAs the insulative barriers layer.Then be superior to 1 * 10 in vacuum -6Pa, deposition rate is 0.1nm/s, the deposition Ar Pressure is under the condition of 0.07Pa, at 1.0nm AlO xThe insulative barriers layer on directly the deposition 5nm magnetic metal Co 75Fe 25(or directly deposit the nonmagnetic metal Al of 5nm, or the antiferromagnetic layer IrMn of deposition 5nm) as intermediate conductive layer.Au about (001)-PMN-PT ferroelectric oxide substrate lower surface sputter 10nm Cr, 100nm is convenient to apply electric field.
Between the Au film of contact electrode and (001)-PMN-PT ferroelectric oxide substrate base lower surface, apply (8kV/cm) to the electric field of 8kV/cm.Shown in Fig. 3 a; Fig. 3 b is that intermediate conductive layer is Co 75Fe 25, add the electric field E of variation and the measurement result sketch map of nano-multilayer film resistance R; Fig. 3 c is that intermediate conductive layer is Co 75Fe 25, add the electric field E of variation and the measurement result sketch map of nano-multilayer film resistance R, and when measuring, apply the magnetic field of 1kOe, so that the resistance of Measurement and analysis nano-multilayer film and the electric field that adds variation, and the relation between the external reinforcement fixed-field.As can be seen from the figure still there is～260% resistance variations relation.Can analyze from measurement result in addition, added external magnetic field does not impact the R-E curve of nano-multilayer film.Explain that this effect is not to originate from magnetic interaction.Fig. 3 d is that intermediate conductive layer is the Al film of 5nm, adds the electric field E of variation and the measurement result sketch map of nano-multilayer film resistance R.As can be seen from the figure still there is～100% resistance variations.What this effect has been described from side elevation is not to derive from magnetoelectricity to interact yet.Fig. 3 e is that intermediate conductive layer is the IrMn film of 5nm, adds the electric field E of variation and the measurement result sketch map of nano-multilayer film resistance R.As can be seen from the figure still there is～44% resistance variations.
Example 3: according to the method for example 1 and 2, utilize magnetron sputtering apparatus, on the ferroelectric base substrate of (001)-PMN-PT, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Co 75Fe 255nm and top cover layer Ta 5nm.At last at the backside deposition bottom Au of (001)-PMN-PT ferroelectric oxide substrate base 100nm.Make electrode: the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation at first, utilize the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Repeat above lithography step again, the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in conductive layer Co 75Fe 25And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Repeat above lithography step again, the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilizing magnetron sputtering apparatus deposition Cr 5nm, Au 10nm, the thickness of the two can be filled and led up etch areas basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Utilize magnetron sputtering apparatus again, peeling off SiO 2After device above deposition Cr 10nm, Au100nm; Repeat above lithography step again, the even thick S1813 ultraviolet photoresist of spin coating 1 μ m on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, at last device is put into acetone and removes photoresist, obtains source electrode s, grid g and drain electrode d.Shown in Fig. 4 a, the structural principle structural representation of FET.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 4:, utilize pulsed laser deposition (PLD), ald (ALD), molecular beam epitaxy or magnetron sputtering apparatus, at Si/SiO according to the method for example 1 and 2 2Deposition underlying metal Cu 50nm on the substrate; Utilize pulsed laser deposition (PLD), ald (ALD), molecular beam epitaxy or magnetron sputtering apparatus deposition functional layer (001)-PMN-PT ferroelectric oxide (can according to specification requirement grow in advance Seed Layer) then, then on PMN-PT ferroelectric oxide film, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Co 75Fe 255nm and top cover layer Ta 5nm.Make electrode: the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation at first, utilize the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Repeat above lithography step again, the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in conductive layer Co 75Fe 25And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Repeat above lithography step again, the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilizing magnetron sputtering apparatus deposition Cr 5nm, Au 10nm, the thickness of the two can be filled and led up etch areas basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Utilize magnetron sputtering apparatus again, peeling off SiO 2After device above deposition Cr 10nm, Au 100nm; Repeat above lithography step again, the even thick S1813 ultraviolet photoresist of spin coating 1 μ m on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, at last device is put into acetone and removes photoresist, obtains source electrode s, grid g and drain electrode d.Shown in Fig. 4 b, the structural principle structural representation of FET.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 5: according to the method for example 1 and 2, utilize magnetron sputtering apparatus, on (001)-PMN-PT ferroelectric oxide substrate base, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Co 75Fe 255nm and top cover layer Ta 5nm.At last at the backside deposition bottom Au of (001)-PMN-PT ferroelectric oxide substrate base 100nm.Make electrode: the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation at first, utilize the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Utilize magnetron sputtering apparatus again, peeling off SiO 2After device above deposition Au 100nm; Repeat above lithography step again, the even thick S1813 ultraviolet photoresist of spin coating 1 μ m on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, at last device is put into acetone and removes photoresist, obtains source electrode s, grid g and drain electrode d.Shown in Fig. 4 c, the structural principle structural representation of FET.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 6: according to example 3 methods, utilize magnetron sputtering apparatus, on (001)-PMN-PT ferroelectric oxide substrate base, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Co 75Fe 255nm and top cover layer Ta 5nm.At last at the backside deposition bottom Au of (001)-PMN-PT ferroelectric oxide substrate base 100nm.Make electrode: the negative glue of the ma-N440 ultraviolet photolithographic that at first spin coating～1 μ m is thick on the nano-multilayer film of preparation, utilize the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Repeat above lithography step again, the ma-N440 ultraviolet photoresist that evenly spin coating～1 μ m is thick on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the plasma etching method to carry out etching does not have the photoresist region covered, promptly at insulating barrier SiO 2Punch, etching depth is to resilient coating Ta.Then device is put into acetone and remove photoresist; Utilize magnetron sputtering apparatus again, deposition Au 100nm on device; Repeat above lithography step again, the even thick S1813 ultraviolet photoresist of spin coating 1 μ m on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the plasma etching method to carry out etching does not have the photoresist region covered, at last device is put into acetone and removes photoresist, obtains source electrode s, grid g and drain electrode d.Shown in Fig. 4 d, the structural principle structural representation of FET.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 7:, utilize pulsed laser deposition (PLD), ald (ALD), molecular beam epitaxy or magnetron sputtering apparatus, at Si/SiO according to the method for example 1 and 2 2Deposition underlying metal Cu 50nm on the substrate; Utilize pulsed laser deposition (PLD), ald (ALD), molecular beam epitaxy or magnetron sputtering apparatus deposition functional layer (001)-PMN-PT ferroelectric oxide (can according to specification requirement grow in advance Seed Layer) then, then on PMN-PT ferroelectric oxide film, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Co 75Fe 255nm and top cover layer Ta 5nm.Make electrode: the thick ma-N440 ultraviolet photoresist of spin coating 1 μ m on the nano-multilayer film of preparation at first, utilize the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Utilize magnetron sputtering apparatus again, peeling off SiO 2After device above deposition Au 100nm; Repeat above lithography step again, the even thick S1813 ultraviolet photoresist of spin coating 1 μ m on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, at last device is put into acetone and removes photoresist, obtains source electrode s, grid g and drain electrode d.Shown in Fig. 4 e, the structural principle structural representation of FET.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 8:, utilize pulsed laser deposition (PLD), ald (ALD), molecular beam epitaxy or magnetron sputtering apparatus, at Si/SiO according to the method for example 1 and 2 2Deposition underlying metal Cu 50nm on the substrate; Utilize pulsed laser deposition (PLD), ald (ALD), molecular beam epitaxy or magnetron sputtering apparatus deposition functional layer (001)-PMN-PT ferroelectric oxide (can according to specification requirement grow in advance Seed Layer) then, then on PMN-PT ferroelectric oxide film, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Co 75Fe 255nm and top cover layer Ta 5nm.Make electrode: the negative glue of the ma-N440 ultraviolet photolithographic that at first spin coating～1 μ m is thick on the nano-multilayer film of preparation, utilize the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the dry plasma etch method to carry out etching does not have the photoresist region covered, and etching depth terminates in resilient coating Ta; And then utilize magnetron sputtering apparatus depositing insulating layer SiO 2, insulating barrier SiO 2Thickness can etch areas be filled and led up basically; Then the device of preparation is put into acetone and carry out peeling off of photoresist; Repeat above lithography step again, the ma-N440 ultraviolet photoresist that evenly spin coating～1 μ m is thick on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the plasma etching method to carry out etching does not have the photoresist region covered, promptly at insulating barrier SiO 2Punch, etching depth is to resilient coating Ta.Then device is put into acetone and remove photoresist; Utilize magnetron sputtering apparatus again, deposition Au 100nm on device; Repeat above lithography step again, the even thick S1813 ultraviolet photoresist of spin coating 1 μ m on the entire device surface utilizes the photolithography plate and the uv-exposure machine of preparation in advance to carry out exposure-processed; Photoresist to behind the uv-exposure develops, photographic fixing; Using the plasma etching method to carry out etching does not have the photoresist region covered, at last device is put into acetone and removes photoresist, obtains source electrode s, grid g and drain electrode d.Shown in Fig. 4 f, the structural principle structural representation of FET.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 9: according to example 3 methods, utilize magnetron sputtering apparatus, on (001)-PMN-PT ferroelectric oxide substrate base, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Al 5nm and top cover layer Ta 5nm.At last at the backside deposition bottom 10nm of (001)-PMN-PT ferroelectric oxide substrate base Cr, Au 100nm.Utilize the micro-processing method in the example 3, the source electrode s of preparation FET, grid g and drain electrode d.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 10: according to example 3 methods, utilize magnetron sputtering apparatus, on (001)-PMN-PT ferroelectric oxide substrate base, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer Al 5nm and top cover layer Ta 5nm.At last at the backside deposition bottom 10nm of (001)-PMN-PT ferroelectric oxide substrate base Cr, Au 100nm.Utilize the micro-processing method in the example 4, the source electrode s of preparation FET, grid g and drain electrode d.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 11: according to example 3 methods, utilize magnetron sputtering apparatus, on (001)-PMN-PT ferroelectric oxide substrate base, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer IrMn 5nm and top cover layer Ta 5nm.At last at the backside deposition bottom 10nm of (001)-PMN-PT ferroelectric oxide substrate base Cr, Au 100nm.Utilize the micro-processing method in the example 3, the source electrode s of preparation FET, grid g and drain electrode d.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 12: according to example 3 methods, utilize magnetron sputtering apparatus, on (001)-PMN-PT ferroelectric oxide substrate base, deposit resilient coating Ta 5nm, insulating barrier AlO successively x1nm, intermediate conductive layer IrMn 5nm and top cover layer Ta 5nm.At last at the backside deposition bottom 10nm of (001)-PMN-PT ferroelectric oxide substrate base Cr, Au 100nm.Utilize the micro-processing method in the example 4, the source electrode s of preparation FET, grid g and drain electrode d.According to the method for testing in example 1 and 2, on grid g, apply the voltage V of variation G, between source electrode and drain electrode, apply V DS, through different voltages with different the resistance between source electrode and the drain electrode is modulated, thereby obtained different drain currents, promptly obtain output characteristic curve.
Example 13:
Fig. 5 a is the embodiment of the invention 13 is sent a telegraph the resistor random-access memory unit of inhibition effect based on reversible electricity a principle schematic.As can be seen from the figure, this memory cell comprises that electricity sends a telegraph immittance rice device, word line (word line), sense bit line (bit line), write bit line (digit line), ground wire (ground line) and 1 transistor.
In the addressing read operation of ERAM; At first provide a suitable level and make transistor work in conducting state, correspondingly derive a read current, this read current～1mA by selecteed sense bit line bit line then by selecteed word line word line; Drain electrode, source electrode, transistor via the nanometer memory cell arrive ground wire ground line; Thereby obtain current nanometer resistive memory cell size, standard value compares in advance together, obtains data information stored in the ERAM unit.
In the addressing write operation of ERAM; At first provide a suitable level by selecteed word line word line and make transistor work in conducting state, (this voltage is greater than the critical turnover voltage V of resistance to apply a bigger voltage by selecteed write bit line digit line then 0), so just between grid and bottom, form electric field, because electricity is sent a telegraph inhibition effect, just can realize the variation of the high low resistance state of nanometer memory cell, so just accomplished writing to the ERAM memory cell data.
Above ERAM memory cell is to be that the basis is designed according to example 3 design principles, can design the ERAM memory cell according to the design principle of example 4,5,6,7,8 so equally, like Fig. 5 b, 5c, 5d, 5e, 5f.Design principle according to example 4,5,6,7,8 is the ERAM memory cell of basic engineering, and operation principle is similar with memory cell among Fig. 5 a.Wherein the bottom white space among Fig. 5 b, 5e, the 5f corresponds to base substrate, the ferroelectric or multi-ferroic material of right and wrong.Peripheral circuits such as word line, write bit line, sense bit line, ground wire should be that designing and preparing is carried out on the basis based on base substrate all.The structural representation of above ERAM memory cell only indicates core structural layer, and other accessory structure layer can add according to actual conditions, but still is within the protection range of this patent.
The present invention provides a kind of electric field regulation and control of a kind of proposition type nano-multilayer film, electric field modulation type FET, switching mode electric-field sensor and electric field drive random asccess memory and preparation method, sends a telegraph inhibition effect to be used for the obtaining electricity that electric field is modulated in the nano-multilayer film under the room temperature.The present invention passes through the modulation of the electric field of variation to the electric polarization characteristic of ferroelectric or multi-ferroic material, and the electricity of influence and change conductive layer is led, regulation and control device changes in resistance, thus obtain the different different Resistance states of electric field correspondence.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.

Claims (42)

1. an electric field regulation and control type nano-multilayer film is characterized in that, comprises successively from the bottom to top:
Bottom;
Base substrate;
Resilient coating
The insulative barriers layer
Conductive layer;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on base substrate, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Resilient coating is used on ferroelectric or multi-ferroic material, applying electric field as top electrode; Middle insulative barriers layer is an oxide; Top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized; Through between described bottom and resilient coating, applying electric field; Because the electric polarization intensity size of base substrate and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer can obtain the different after the match Resistance states of different electric, causes reversible electricity to send a telegraph the generation of inhibition effect.
2. electric field regulation and control type nano-multilayer film according to claim 1 is characterized in that in the said nano-multilayer film, described bottom comprises conductive metallic material.
3. electric field regulation and control type nano-multilayer film according to claim 1; It is characterized in that; In the said nano-multilayer film, described conductive layer comprises nonmagnetic metal layer, magnetic metallic layers, antiferromagnetic layer, electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.
4. electric field regulation and control type nano-multilayer film according to claim 3 is characterized in that, in the said nano-multilayer film, described nonmagnetic metal layer is by nonmagnetic metal or its alloy composition, and thickness is 2-100nm; Described magnetic metallic layers is processed by magnetic metal or its alloy, and thickness is 2-100nm or is processed by dilute magnetic semiconductor material or semi-metallic that thickness is 2-100nm.
Described magnetic metallic layers comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
5. electric field regulation and control type nano-multilayer film according to claim 4 is characterized in that in the said nano-multilayer film, said antiferromagnetic layer is made up of antiferromagnetic materials, and said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
6. electric field regulation and control type nano-multilayer film according to claim 4 is characterized in that in the said nano-multilayer film, said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
7. electric field regulation and control type nano-multilayer film according to claim 1 is characterized in that in the said nano-multilayer film, said top cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
8. an electric field modulation type nano-multilayer film is characterized in that, comprises successively from the bottom to top:
Base substrate;
Bottom;
Functional layer
Resilient coating
The insulative barriers layer
Conductive layer;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Said functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Said resilient coating is used on ferroelectric or multiferroic film material, applying electric field as top electrode; The insulative barriers layer of said centre is an oxide; Said top cover layer is a protective layer; Prevent that intermediate conductive layer is oxidized; Through between described bottom and resilient coating, applying electric field, owing to the electric polarization intensity size of functional layer and the change of direction thereof, the face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
9. electric field modulation type nano-multilayer film according to claim 8 is characterized in that in the said nano-multilayer film, described base substrate comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate.
10. electric field modulation type nano-multilayer film according to claim 8 is characterized in that in the said nano-multilayer film, described bottom comprises conductive metallic material.
11. electric field modulation type nano-multilayer film according to claim 8 is characterized in that, in the said nano-multilayer film, described functional layer comprises ferroelectric or many iron property nano thin-film, can deposit Seed Layer according to actual needs in advance.
12. electric field modulation type nano-multilayer film according to claim 8; It is characterized in that; In the said nano-multilayer film; Said conductive layer is grown in above the said insulative barriers layer, and its electricity is led and can be received ferroelectric or the electric polarization intensity size of multiferroic film and the regulation and control of direction of bottom through electric polarization interaction or magneto-electric coupled effect.
13. electric field modulation type nano-multilayer film according to claim 12; It is characterized in that; In the said nano-multilayer film, described conductive layer comprises nonmagnetic metal layer, magnetic metallic layers, antiferromagnetic layer, electroconductive molecule material, topological insulating material or conductive doped semi-conducting material etc.
14. electric field modulation type nano-multilayer film according to claim 13 is characterized in that, in the said nano-multilayer film, described nonmagnetic metal layer is by nonmagnetic metal or its alloy composition, and thickness is 2-100nm.
Described magnetic metallic layers is processed by magnetic metal or its alloy, and thickness is 2-100nm or is processed by dilute magnetic semiconductor material or semi-metallic that thickness is 2-100nm.
Described magnetic metallic layers comprises direct or indirect pinning structure, and directly the pinning structure comprises antiferromagnetic layer/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
15. electric field modulation type nano-multilayer film according to claim 13 is characterized in that in the said nano-multilayer film, said antiferromagnetic layer is made up of antiferromagnetic materials, said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
16. electric field modulation type nano-multilayer film according to claim 14 is characterized in that, in the said nano-multilayer film, said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
17. electric field modulation type nano-multilayer film according to claim 8 is characterized in that, in the said nano-multilayer film, said top cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, and thickness is 2～200nm.
18. an electric field regulation and control type nano-multilayer film is characterized in that, comprises successively from the bottom to top:
Bottom
Base substrate;
Magnetosphere;
Top cover layer;
Wherein said bottom is an electric conducting material, is used on base substrate, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer is as top electrode and protective layer; Prevent that the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer, applying electric field, because the electric polarization intensity size of base substrate and the change of direction thereof, influence and change adjacent magnetospheric internal conductance; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
19. electric field regulation and control type nano-multilayer film according to claim 18 is characterized in that said magnetosphere can ideally be grown in above the base substrate material, and can interact with base substrate through magneto-electric coupled.
20. electric field regulation and control type nano-multilayer film according to claim 18 is characterized in that in the said nano-multilayer film, described magnetosphere is processed by feeromagnetic metal or its alloy, thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
21. electric field regulation and control type nano-multilayer film according to claim 18 is characterized in that in the said nano-multilayer film, described magnetosphere comprises direct or indirect pinning structure, directly the pinning structure comprises antiferromagnetic layer)/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
22. electric field regulation and control type nano-multilayer film according to claim 18 is characterized in that in the said nano-multilayer film, said antiferromagnetic layer is made up of antiferromagnetic materials, said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
23. electric field regulation and control type nano-multilayer film according to claim 18; It is characterized in that; In the said nano-multilayer film; Said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, and thickness is 2～100nm or is processed by dilute magnetic semiconductor material or semi-metallic that thickness is 2～100nm.
24. electric field regulation and control type nano-multilayer film according to claim 18 is characterized in that in the said nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, thickness is 2～200nm.
25. an electric field regulation and control type nano-multilayer film is characterized in that, comprises successively from the bottom to top:
Base substrate;
Bottom;
Functional layer
Magnetosphere;
Top cover layer;
Wherein said base substrate is non-ferroelectric or multi-ferroic material; Said bottom is an electric conducting material; Be used on functional layer, applying electric field as bottom electrode; Functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer, applying electric field; Because the electric polarization intensity size of functional layer and the change of direction thereof; Influence and change adjacent metal and magnetospheric internal conductance can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
26. electric field regulation and control type nano-multilayer film according to claim 25 is characterized in that in the said nano-multilayer film, described bottom comprises conductive metallic material.
27. electric field regulation and control type nano-multilayer film according to claim 25 is characterized in that in the said nano-multilayer film, described base substrate comprises Si substrate, SiC, glass substrate or Si-SiO 2Substrate, MgO single crystalline substrate, Al 2O 3Single crystalline substrate or organic flexible substrate.
28. electric field regulation and control type nano-multilayer film according to claim 25 is characterized in that in the said nano-multilayer film, described functional layer comprises ferroelectric or many iron property nano thin-film.
29. electric field regulation and control type nano-multilayer film according to claim 25; It is characterized in that; In the said nano-multilayer film; Said magnetosphere is grown in above the material of said functional layer, and its electricity is led and can be received ferroelectric or the electric polarization intensity size of multiferroic film and the regulation and control of direction of bottom through electric polarization interaction or magneto-electric coupled effect.
30. electric field regulation and control type nano-multilayer film according to claim 25 is characterized in that in the said nano-multilayer film, described magnetosphere is processed by feeromagnetic metal or its alloy, thickness is 2-100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2-100nm.
31. electric field regulation and control type nano-multilayer film according to claim 25 is characterized in that in the said nano-multilayer film, described magnetosphere comprises direct or indirect pinning structure, directly the pinning structure comprises antiferromagnetic layer/ferromagnetic layer; The pinning structure comprises antiferromagnetic layer/first ferromagnetic layer/non-magnetic metal layer/second ferromagnetic layer indirectly.
32. electric field regulation and control type nano-multilayer film according to claim 31 is characterized in that, in the said nano-multilayer film, said antiferromagnetic layer has antiferromagnetic materials to constitute, and said antiferromagnetic materials comprise having anti-ferromagnetic alloy or oxide.
33. electric field regulation and control type nano-multilayer film according to claim 31 is characterized in that in the said nano-multilayer film, said ferromagnetic layer, first ferromagnetic layer and second ferromagnetic layer are processed by ferromagnetic metal or its alloy, thickness is 2～100nm; Or process by dilute magnetic semiconductor material or semi-metallic, thickness is 2～100nm.
34. electric field regulation and control type nano-multilayer film according to claim 31 is characterized in that in the said nano-multilayer film, said cover layer comprises the single or multiple lift film of being processed by non-easy oxidation metal material, thickness is 2～200nm.
35. send a telegraph the electric field modulation type FET of inhibition effect based on electricity for one kind, it is characterized in that, comprise any described electric field regulation and control type nano-multilayer film among the claim 1-34.
36. electric field modulation type FET of sending a telegraph inhibition effect based on electricity according to claim 35; It is characterized in that,, between top cover layer and bottom, form certain electric field through applying different voltages with different at grid; Between source electrode and drain electrode, apply certain voltage in addition; Because electricity is sent a telegraph the generation of inhibition effect, under different electric fields, the resistance of multilayer film is different; Cause from source electrode and lead difference, promptly can regulate and control from source electrode and lead or the size of resistance value to the electricity of drain electrode through grid voltage to the electricity of drain electrode.
37. one kind based on electricity send a telegraph inhibition effect the switching mode electric-field sensor, it is characterized in that, comprise any described electric field regulation and control type nano-multilayer film among the claim 1-34.
38. one kind is sent a telegraph nano-device inhibition effect, that promptly regulate and control with electric field based on electricity is the electric field drive random asccess memory of memory cell, it is characterized in that, comprises any described electric field regulation and control type nano-multilayer film among the claim 1-34.
39. the preparation method of the described electric field regulation and control of claim 1 type nano-multilayer film; It is characterized in that, adopt magnetron sputtering and combine laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method deposition bottom, resilient coating, insulative barriers layer, conductive layer and top cover layer; Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Resilient coating is used on ferroelectric or multi-ferroic material, applying electric field as top electrode; Middle insulative barriers layer is an oxide; Top cover layer is a protective layer, prevents that intermediate conductive layer is oxidized; Through between described bottom and resilient coating, applying electric field; Because the electric polarization intensity size of base substrate and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer can obtain the different after the match Resistance states of different electric, causes reversible electricity to send a telegraph the generation of inhibition effect.
40. the preparation method of the described electric field regulation and control of claim 8 type nano-multilayer film; It is characterized in that, adopt magnetron sputtering and combine laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method on base substrate, to deposit bottom, functional layer, resilient coating, insulative barriers layer, conductive layer and top cover layer successively;
Wherein said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Said functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Said resilient coating is used on ferroelectric or multiferroic film material, applying electric field as top electrode; The insulative barriers layer of said centre is an oxide; Said top cover layer is a protective layer; Prevent that intermediate conductive layer is oxidized; Through between described bottom and resilient coating, applying electric field, owing to the electric polarization intensity size of functional layer and the change of direction thereof, the face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
41. the preparation method of the described electric field regulation and control of claim 18 type nano-multilayer film; It is characterized in that, adopt magnetron sputtering and combine laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method on base substrate, to deposit bottom, magnetosphere and top cover layer successively; Wherein said bottom is an electric conducting material, is used on ferroelectric or multi-ferroic material, applying electric field as bottom electrode; Base substrate is ferroelectric or multi-ferroic material, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer is as top electrode and protective layer; Prevent that the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer, applying electric field, owing to the electric polarization intensity size of base substrate and the change of direction thereof, the face internal conductance of influence and change adjacent conductive layer; Can obtain the different after the match Resistance states of different electric, cause reversible electricity to send a telegraph the generation of inhibition effect.
42. the preparation method of the described electric field regulation and control of claim 25 type nano-multilayer film; It is characterized in that, adopt magnetron sputtering and combine laser assistant depositing, molecular beam epitaxy, ald or gas-phase chemical reaction deposition growing method on base substrate, to deposit bottom, functional layer, magnetosphere and top cover layer successively;
Wherein said base substrate is non-ferroelectric or multi-ferroic material; Said bottom is an electric conducting material, is used on functional layer, applying electric field as bottom electrode; Functional layer is ferroelectric or multiferroic film, can under effect of electric field, change and regulate and control the size and the direction thereof of its electric polarization intensity; Top cover layer prevents that as top electrode and protective layer the intermediate magnetic layer is oxidized; Through between described bottom and top cover layer, applying electric field; Because the electric polarization intensity size of functional layer and the change of direction thereof; The face internal conductance of influence and change adjacent conductive layer can obtain the different after the match Resistance states of different electric, causes reversible electricity to send a telegraph the generation of inhibition effect.
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CN110176534A (en) * 2019-06-03 2019-08-27 西安交通大学 Adjustable tunneling junction magnetoresistive sensor of measurement range and preparation method thereof

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