SG11201705789RA - Memory device and method for operating thereof - Google Patents
Memory device and method for operating thereofInfo
- Publication number
- SG11201705789RA SG11201705789RA SG11201705789RA SG11201705789RA SG11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA
- Authority
- SG
- Singapore
- Prior art keywords
- operating
- memory device
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG10201500289W | 2015-01-15 | ||
| PCT/SG2015/050520 WO2016114718A1 (en) | 2015-01-15 | 2015-12-31 | Memory device and method for operating thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201705789RA true SG11201705789RA (en) | 2017-08-30 |
Family
ID=56406139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201705789RA SG11201705789RA (en) | 2015-01-15 | 2015-12-31 | Memory device and method for operating thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20180005678A1 (en) |
| SG (1) | SG11201705789RA (en) |
| WO (1) | WO2016114718A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016110049A1 (en) * | 2016-05-31 | 2017-11-30 | Infineon Technologies Ag | Determining a state of a memory cell |
| US9792984B1 (en) * | 2016-10-27 | 2017-10-17 | Arm Ltd. | Method, system and device for non-volatile memory device operation |
| US9997239B1 (en) * | 2017-05-02 | 2018-06-12 | Everspin Technologies, Inc. | Word line overdrive in memory and method therefor |
| US10354710B2 (en) | 2017-07-24 | 2019-07-16 | Sandisk Technologies Llc | Magnetoelectric random access memory array and methods of operating the same |
| CN114171083A (en) * | 2020-11-03 | 2022-03-11 | 台湾积体电路制造股份有限公司 | Memory device |
| US11823724B2 (en) * | 2021-10-26 | 2023-11-21 | International Business Machines Corporation | Magneto-electric low power analogue magnetic tunnel junction memory |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0154193B1 (en) * | 1994-12-30 | 1998-12-01 | 김주용 | Sense amplifier circuit |
| JP4046513B2 (en) * | 2002-01-30 | 2008-02-13 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit |
| TW556223B (en) * | 2002-04-11 | 2003-10-01 | Ememory Technology Inc | Memory using two-stage sensing amplifier with additional load unit |
| KR100484255B1 (en) * | 2002-10-31 | 2005-04-22 | 주식회사 하이닉스반도체 | Semiconductor memory device for reducing noise in operation of sense amplifier |
| US6898104B2 (en) * | 2002-11-12 | 2005-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device having semiconductor memory with sense amplifier |
| JP4941649B2 (en) * | 2004-08-25 | 2012-05-30 | 日本電気株式会社 | Memory cell and magnetic random access memory |
| WO2006085545A1 (en) * | 2005-02-09 | 2006-08-17 | Nec Corporation | Toggle magnetic random access memory and toggle magnetic random access memory write method |
| JPWO2007099874A1 (en) * | 2006-02-27 | 2009-07-16 | 日本電気株式会社 | Magnetoresistive element and magnetic random access memory |
| US7345912B2 (en) * | 2006-06-01 | 2008-03-18 | Grandis, Inc. | Method and system for providing a magnetic memory structure utilizing spin transfer |
| US7616488B2 (en) * | 2006-07-10 | 2009-11-10 | Panasonic Corporation | Current or voltage measurement circuit, sense circuit, semiconductor non-volatile memory, and differential amplifier |
| TWI415124B (en) * | 2007-08-09 | 2013-11-11 | Ind Tech Res Inst | Magetic random access memory |
| JP5190499B2 (en) * | 2010-09-17 | 2013-04-24 | 株式会社東芝 | Semiconductor memory device |
| JP5811693B2 (en) * | 2011-08-25 | 2015-11-11 | ソニー株式会社 | Resistance change type memory device and driving method thereof |
| CN102487124B (en) * | 2011-09-19 | 2014-07-23 | 中国科学院物理研究所 | Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method |
| KR20140023806A (en) * | 2012-08-17 | 2014-02-27 | 삼성전자주식회사 | Architecture of magnetic resistance memory device |
| US9165629B2 (en) * | 2013-03-12 | 2015-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for MRAM sense reference trimming |
| US9171590B2 (en) * | 2014-03-26 | 2015-10-27 | National Tsing Hua University | Sensing marging expanding scheme for memory |
-
2015
- 2015-12-31 US US15/543,976 patent/US20180005678A1/en not_active Abandoned
- 2015-12-31 WO PCT/SG2015/050520 patent/WO2016114718A1/en active Application Filing
- 2015-12-31 SG SG11201705789RA patent/SG11201705789RA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016114718A1 (en) | 2016-07-21 |
| US20180005678A1 (en) | 2018-01-04 |
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