CN102129863B - Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof - Google Patents
Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof Download PDFInfo
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- CN102129863B CN102129863B CN 201010608783 CN201010608783A CN102129863B CN 102129863 B CN102129863 B CN 102129863B CN 201010608783 CN201010608783 CN 201010608783 CN 201010608783 A CN201010608783 A CN 201010608783A CN 102129863 B CN102129863 B CN 102129863B
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Abstract
The invention discloses a spin valve structure with electric field-adjustable magnetoresistance. The spin valve structure is characterized in that: the spin valve structure with a multi-ferroic anti-ferromagnetic layer\a pinning layer\a non-magnetic layer/a free layer is prepared by replacing the anti-ferromagnetic layer in a conventional spin valve with a multi-ferroic material; and the magnetoresistance of the overall spin valve is adjusted and controlled by the anti-ferromagnetic layer. The invention also discloses a preparation process for the structure. The spin valve structure has the advantages that: the adjustment mode of the conventional spin valve is that the adjustment and the control of two states of the magnetoresistance are realized by changing a magnetic field direction of the free layer through an external magnetic field; and the spin valve utilizes a magnetoelectric effect of the multi-ferroic material and realizes the adjustment and the control of the two states of the magnetoresistance, namely an electric field readable and writable magnetic spin valve, by applying an external voltage to change an electric field direction so as to change the magnetic field direction thereof to influence the magnetic field direction of the pinning layer.
Description
Technical field
The invention belongs to the magnetic storage technical field, but a kind of electric field regulation and control spin valve structure is provided.This spin valve structure take multi-ferroic material as inverse ferric magnetosphere, can change the electric territory direction of inverse ferric magnetosphere by applying external electric field, and because the magnetoelectric effect of multi-ferroic material, its magnetic domain direction also can change, thereby cause the variation of pinning layer magnetic domain, change the magneto-resistor state of whole Spin Valve.Mutual triggering and the control of this magnetoelectricity signal not only help sensor and magnetic memory device multifunction, more are expected to develop based on this new antetype device, and electronically written, the magnetic of superelevation speed are read becomes possibility.
Technical background
Ferromagnetic material (ferromagnetics) has Spontaneous Magnetic Moments, and it can change with externally-applied magnetic field and overturn by (switch), thus the storage of realization information.The hyundai electronics industry comprises computing machine etc., is widely used the magnetic storage technology.At the very important sensor technology in the fields such as commercial production then mainly based on ferroelectric material.Ferroelectric material (ferroelectrics) has the self power generation polarization, and this electric polarization can change overturn (switch) with extra electric field.A lot of ferroelectric materials also are iron bullet materials (ferroelastics) simultaneously, and its electropolarized change is accompanied by the variation of shape (or grating constant) usually, therefore are widely used in the aspects such as sensor or acoustic wave transducer.With regard to information recording/and reading, the magnetic recording reading speed is fast but write slowly, and ferroelectric record reads complexity but writing speed is fast, and has non-volatile.And along with the progress of science and technology, people must ask more and more higher for device miniaturization and multifunction, and this just needs the new material of development with the development of new device.Being found to be us an extraordinary solution be provided of multi-ferroic material (multiferroics) and magnetoelectric effect (magnetoelectric effect).
Only with regard to present prediction, multi-ferroic material has broad application prospects in fields such as sensor, spintronicss.As if the simplest and direct application is to utilize electric polarization (voltage) that the susceptibility of externally-applied magnetic field is made magnetic field sensor, and its inverse process extra electric field or electropolarized change are more attractive on the impact of system's magnetic moment.The propositions such as Ramesh can utilize and antiferromagnetic ferromagnetic magnetic pinning be realized observation to this effect.They point out can be in antiferromagnetic multi-ferroic material film growth one deck soft magnetic material structure, utilize the exchange biased pinning effect of magnetic, extra electric field causes antiferromagnetic multi-ferroic material magnetic moment to change, cause thus soft iron magnetosphere direction of magnetization to change, thereby realize [the Ramesh R. that reads of information, and Spaldin A.N., Nature Mater.6:21-29 (2007)].Existing multi-ferroic material is few in number, and mostly be ferroelectric antiferromagnetic, so available multi-ferroic material replaces the inverse ferric magnetosphere of traditional Spin Valve, utilize the exchange biased pinning effect of its magnetoelectric effect and magnetic, can realize changing by applying external electric field the resistance states of whole Spin Valve, namely whole Spin Valve be carried out the electric field regulation and control.
BiFeO
3It is unique material with many iron of room temperature property that is proved, be antiferromagnetic order (Neel temperature is 380 ℃) and ferroelectric order (Curie temperature is 810 ℃) [Wang J. under the room temperature, Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Viehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M, Wuttig M, and Ramesh R., Science 299,1719 (2003)], but BFO at room temperature large leakage conductance and low resistance value so that its be merely able under lower temperature, observe magnetoelectric effect.The in recent years progress of film preparing technology has greatly reduced BiFeO
3Leakage conductance at room temperature, thus at room temperature observe more intense magnetoelectric effect.Other BiFeO
3With other ABO
3The ferroelectric material of type perovskite structure melts or doping vario-property admittedly, also is proved to be to strengthen magnetoelectric effect [Srinivas A., Kim D.W., and Hong K.S., Appl.Phys.Lett.83,2217 (2003)].And these are all indicating and are utilizing BiFeO
3Or with BiFeO
3Be the multi-ferroic material on basis, Spin Valve carried out the feasibility of electric field regulation and control.
Summary of the invention
The object of the invention is to provide a kind of novel spin valve structure, and it will have magnetic field and two kinds of control measures of electric field.Inverse ferric magnetosphere in the structure adopts multi-ferroic material, utilizes its magnetoelectric effect, changes the magnetic domain direction of inverse ferric magnetosphere by applying external electric field, and then changes pinning layer magnetic domain direction, reaches the purpose of regulating two kinds of Resistance states of whole Spin Valve height.
Inverse ferric magnetosphere of the present invention and spin valve structure are prepared from by conventional film deposition equipment (for example pulsed laser deposition, magnetron sputtering etc.).
Basic structure of the present invention is five layer films:
Up ground floor is the multi-ferroic material inverse ferric magnetosphere end of from, and thickness is about 30～320 nanometers.
Up the second layer is pinning layer Co the end of from
90Fe
10, thickness is 2～10 nanometers.
The end of from up the 3rd layer be non-magnetosphere Cu, thickness is 2～10 nanometers.
The end of from up the 4th layer be free layer Co
90Fe
10, thickness is 2～10 nanometers.
Up layer 5 is protective seam Ta the end of from, and thickness is 10 nanometers.
Further, described many iron of ground floor property inverse ferric magnetosphere is preferably BiFeO
3
Above-mentioned concrete manufacture craft is as follows: adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and size is 10*10 (mm
2); Pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～750 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa, and substrate is cooled with circulating water.
Further, described many iron of ground floor property inverse ferric magnetosphere is preferably Bi
2FeCrO
6
Above-mentioned concrete manufacture craft is as follows: adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and size is 10*10 (mm
2); Pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa, and substrate is cooled with circulating water.
Further, described many iron of ground floor property inverse ferric magnetosphere is preferably compound multi-iron material BiFeO
3-Ba
0.5Sr
0.5TiO
3
Above-mentioned concrete manufacture craft is as follows: adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and size is 10*10 (mm
2); Pulsed laser deposition growth Ba
0.5Sr
0.5TiO
3Layer, laser energy is 220mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; Then pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa, and substrate is cooled with circulating water.
The invention has the advantages that: only need to apply a very little voltage to many iron property inverse ferric magnetosphere, the inverse ferric magnetosphere magnetic domain is changed, and change pinning layer magnetic domain direction, the resistance of whole Spin Valve is changed.
Description of drawings
Fig. 1 is structural representation of the present invention.
To be resistance value of the present invention the height two states occurs with the variation of the external electric field that applies to Fig. 2.
Fig. 3 is that sample 1 of the present invention is not applying in the external electric field situation measured magneto-resistor.
Fig. 4 be sample 1 of the present invention applying+0.5V voltage is after 10 minutes, measured magneto-resistor.
Fig. 5 be sample 1 of the present invention applying-0.5V voltage is after 10 minutes, measured magneto-resistor.
Fig. 6 be sample 2 of the present invention applying+0.5V voltage is after 10 minutes, measured magneto-resistor.
Fig. 7 be sample 2 of the present invention applying-0.5V voltage is after 10 minutes, measured magneto-resistor.
Fig. 8 be sample 3 of the present invention applying+0.5V voltage is after 10 minutes, measured magneto-resistor.
Fig. 9 be sample 3 of the present invention applying-0.5V voltage is after 10 minutes, measured magneto-resistor.
Embodiment
The applicant is according to said structure, utilizes respectively pulsed laser deposition and the magnetic control sputtering system new spin valve structure of having grown:
Sample 1: with multi-ferroic material BiFeO
3Be inverse ferric magnetosphere, adopt pulse laser deposition to be deposited on the substrate, then use magnetron sputtering growth in situ Spin Valve.The detailed preparation technology of said structure is: adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and size is 10*10 (mm
2); Pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～750 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa, and substrate is cooled with circulating water.Each layer thickness is respectively: multi-ferroic material BiFeO
3Thickness 200 nanometers, pinning layer Co
90Fe
10Thickness is 5 nanometers, and non-magnetosphere Cu thickness is 5 nanometers, free layer Co
90Fe
10Thickness is 3 nanometers, and protective seam Ta, thickness are 10 nanometers.
Sample 2: with multi-ferroic material Bi
2FeCrO
6Be inverse ferric magnetosphere, adopt pulse laser deposition to be deposited on the substrate, then use magnetron sputtering growth in situ Spin Valve.The detailed preparation technology of said structure is: adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and size is 10*10 (mm
2); Pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa, and substrate is cooled with circulating water.Each layer thickness is respectively: multi-ferroic material Bi
2FeCrO
6Thickness 160 nanometers, pinning layer Co
90Fe
10Thickness is 5 nanometers, and non-magnetosphere Cu thickness is 5 nanometers, free layer Co
90Fe
10Thickness is 3 nanometers, and protective seam Ta, thickness are 10 nanometers.
Sample 3: with many iron property compound substance BiFeO
3-Ba
0.5Sr
0.5TiO
3Be inverse ferric magnetosphere, adopt pulse laser deposition to be deposited on the substrate, then use magnetron sputtering growth in situ Spin Valve.The detailed preparation technology of said structure is: adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and size is 10*10 (mm
2); Pulsed laser deposition growth Ba
0.5Sr
0.5TiO
3Layer, laser energy is 220mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; Then pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and it is 0.8～10Pa that oxygen during deposition (99.99%) is pressed, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa, and substrate is cooled with circulating water.Each layer thickness is respectively: compound multi-iron material BiFeO
3-Ba
0.5Sr
0.5TiO
3Thickness 320 nanometers, pinning layer Co
90Fe
10Thickness is 5 nanometers, and non-magnetosphere Cu thickness is 5 nanometers, free layer Co
90Fe
10Thickness is 3 nanometers, and protective seam Ta, thickness are 10 nanometers.
For the sample for preparing, we introduce electrode at the Pt of substrate layer and top layer Ta layer respectively, use source of stable pressure that voltage is provided, and 10 minutes duration, measure the magneto-resistor of sample.Through measuring, all samples can be measured magneto-resistor after applying different voltages, and magneto-resistor produced certain variation, and the different state of height also can appear in the system overall resistance, show that extra electric field by many iron property inverse ferric magnetosphere, plays modulating action for whole Spin Valve.
Claims (3)
1. but the spin valve structure of an electric field adjusting magneto-resistor is characterized in that, concrete structure is:
Up ground floor is many iron property inverse ferric magnetosphere BiFeO the end of from
3, thickness is 30～320 nanometers;
Up the second layer is pinning layer Co the end of from
90Fe
10, thickness is 2～10 nanometers;
The end of from up the 3rd layer be non-magnetosphere Cu, thickness is 2～10 nanometers;
The end of from up the 4th layer be free layer Co
90Fe
10, thickness is 2～10 nanometers;
Up layer 5 is protective seam Ta the end of from, and thickness is 10 nanometers;
The step of preparation process of described structure is as follows:
Adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and the hearth electrode size is 10*10 (mm
2); Pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and purity be that 99.99% oxygen presses is 0.8～10Pa during deposition, and temperature is 650～750 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, purity is that 99.99% Ar Pressure is 0.5Pa during sputter, substrate is cooled with circulating water.
2. but the spin valve structure of an electric field adjusting magneto-resistor is characterized in that, concrete structure is:
Up ground floor is many iron property inverse ferric magnetosphere Bi the end of from
2FeCrO
6, thickness is 30～320 nanometers;
Up the second layer is pinning layer Co the end of from
90Fe
10, thickness is 2～10 nanometers;
The end of from up the 3rd layer be non-magnetosphere Cu, thickness is 2～10 nanometers;
The end of from up the 4th layer be free layer Co
90Fe
10, thickness is 2～10 nanometers;
Up layer 5 is protective seam Ta the end of from, and thickness is 10 nanometers;
The step of preparation process of described structure is as follows:
Adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and the hearth electrode size is 10*10 (mm
2); Pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and purity be that 99.99% oxygen presses is 0.8～10Pa during deposition, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, purity is that 99.99% Ar Pressure is 0.5Pa during sputter, substrate is cooled with circulating water.
3. but the spin valve structure of an electric field adjusting magneto-resistor is characterized in that, concrete structure is:
Up ground floor is many iron property inverse ferric magnetosphere BiFeO the end of from
3-Ba
0.5Sr
0.5TiO
3, thickness is 30～320 nanometers;
Up the second layer is pinning layer Co the end of from
90Fe
10, thickness is 2～10 nanometers;
The end of from up the 3rd layer be non-magnetosphere Cu, thickness is 2～10 nanometers;
The end of from up the 4th layer be free layer Co
90Fe
10, thickness is 2～10 nanometers;
Up layer 5 is protective seam Ta the end of from, and thickness is 10 nanometers;
The step of preparation process of described structure is as follows: adopt Pt (111)/Ti/SiO
2/ Si substrate, Pt layer are as hearth electrode, and the hearth electrode size is 10*10 (mm
2); Pulsed laser deposition growth Ba
0.5Sr
0.5TiO
3Layer, laser energy is 220mJ, and frequency is 5Hz, and purity is that 99.99% oxygen pressure is 0.8～10Pa during deposition, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; Then pulsed laser deposition many iron property inverse ferric magnetosphere of growing, laser energy is 300mJ, and frequency is 5Hz, and purity be that 99.99% oxygen presses is 0.8～10Pa during deposition, and temperature is 650～700 ℃, it is 20～300Pa that annealing oxygen is pressed, annealing time 30 minutes; The Grown by Magnetron Sputtering spin valve structure, sputtering chamber base vacuum degree is 2 * 10
-5Pa, purity is that 99.99% Ar Pressure is 0.5Pa during sputter, substrate is cooled with circulating water.
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102487124B (en) * | 2011-09-19 | 2014-07-23 | 中国科学院物理研究所 | Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method |
| CN107064829B (en) * | 2017-05-04 | 2023-02-21 | 江苏多维科技有限公司 | Single-chip high-sensitivity magneto-resistance linear sensor |
| CN110112287B (en) * | 2019-05-17 | 2021-02-05 | 华中科技大学 | Electric-writing magnetic read-write memory based on multi-iron heterojunction exchange bias effect |
| CN113314166B (en) * | 2021-05-14 | 2023-12-12 | 致真存储(北京)科技有限公司 | Method for controlling pinning layer domain structure to realize multi-state storage in giant/tunneling magnetic resistance structure and multi-state storage |
| CN113611795B (en) * | 2021-06-15 | 2023-09-26 | 北京航空航天大学 | Vertically stacked magnetic spin logic device and method for implementing information access |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1603454A (en) * | 2004-10-28 | 2005-04-06 | 复旦大学 | Method for preparing spin valve capable of improving giant magnetoresistance effect |
| CN101471420A (en) * | 2008-07-30 | 2009-07-01 | 电子科技大学 | Double exchange bias field type spinning valve |
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| KR20030047046A (en) * | 2001-12-07 | 2003-06-18 | 삼성전자주식회사 | Deposition of Heusler alloy thin film by Co-sputtering |
| CN101840993B (en) * | 2010-05-05 | 2012-02-15 | 北京科技大学 | Multilayer film structure having exchange bias effect and manufacturing method thereof |
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| CN1603454A (en) * | 2004-10-28 | 2005-04-06 | 复旦大学 | Method for preparing spin valve capable of improving giant magnetoresistance effect |
| CN101471420A (en) * | 2008-07-30 | 2009-07-01 | 电子科技大学 | Double exchange bias field type spinning valve |
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