CN102768854A - Magnetoelectric composite multi-state memory unit and preparation method thereof - Google Patents
Magnetoelectric composite multi-state memory unit and preparation method thereof Download PDFInfo
- Publication number
- CN102768854A CN102768854A CN2012102125568A CN201210212556A CN102768854A CN 102768854 A CN102768854 A CN 102768854A CN 2012102125568 A CN2012102125568 A CN 2012102125568A CN 201210212556 A CN201210212556 A CN 201210212556A CN 102768854 A CN102768854 A CN 102768854A
- Authority
- CN
- China
- Prior art keywords
- magnetoelectricity
- film
- memory cell
- layer
- state memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
A magnetoelectric composite multi-state memory unit and a preparation method thereof. The magnetoelectric composite multi-state memory unit comprises a bottom electrode, a ferroelectric layer and a top electrode, which are sequentially precipitated on a substrate. The bottom electrode is a ferromagnetic layer; the top electrode is a ferromagnetic layer or a thin film layer made of Ag, Au, Pt, Cu or Al; and the ferromagnetic layer is made of La1-xSrxMnMyO3; x and y satisfy the relations of: 0.15<=x<= 0.5, and 0 <= y<= 0.1, and M is at least one selected from Ag, Bi, Cu, Co, Ni and Sc; the ferroelectric layer is made of BaTiO3; materials of the ferromagnetic layer and the ferroelectric layer all have (110) orientation; and a thickness ratio of the ferromagnetic layer and the ferroelectric layer is 0.1: 20. The magnetoelectric composite multi-state memory unit provided by the invention has the ferroelectric phase and the ferromagnetic phase, which have matched structures and good interface coupling, easily controllable components and simple preparation process; besides, the magnetoelectric composite multi-state memory unit not only the realizes a function of multi-state data storage, but also has advantages of nonvolatile data storage, simple and fast data reading, and good process compatibility with a traditional semiconductor.
Description
Technical field
The present invention relates to compound multi-state memory cell of a kind of magnetoelectricity and preparation method thereof, belong to microelectronic component and preparing technical field thereof.
Background technology
Along with people's increases sharply to storage requirement, and memory technology just develops towards high speed, highdensity direction.Multi-state memory can be stored a plurality of information states in a storage unit, compare traditional two condition storer (each cell stores 0,1 two states) and can under the situation that does not change number of memory cells, improve memory capacity exponentially.Therefore, polymorphic memory technology is considered to the important directions of following high-density memory technology development.
At present, the material that has a polymorphic memory function mainly contains two types of phase-change material and multi-ferroic materials.The principle of the polymorphic storage of phase-change material mainly is to obtain the resistance states of different resistances through the crystallization degree of controlling the Ge-Sb-Te based material, thereby realizes polymorphic storage.The major defect of the polymorphic storage of phase transformation is that the intermediateness resistance fluctuation between high-impedance state and the low resistance state is bigger, and noise margin property is poor, and circuit design and verification error correcting routine are complicated.Multi-ferroic material be four kinds of different polarized states utilizing material under different electric fields and magnetic field, to show (± P, ± M) realize polymorphic storage.Multi-ferroic material according to chemical composition can be divided into two big types, and one type is single-phase multi-ferroic material, and another kind of is many iron property magnetic electric compound material.Single-phase multi-ferroic material realizes that polymorphic storage normally utilizes magnetotunneling knot under different polarized states, to show four kinds and wears then that resistance realizes; But its Curie temperature of single-phase multi-ferroic material or Neel temperature can't realize polymorphic storage generally all far below room temperature under the normal temperature.The polymorphic storage principle of many iron property magnetoelectricity composite film material is to utilize alternating magnetic field to induce four kinds of different conditions (voltage swing is different with direction) that magnetic electric compound material magnetoelectricity output signal list reveals to realize polymorphic storage.Comparatively speaking, that the compound polymorphic storage of magnetoelectricity has is simple in structure, the normal temperature applicability is good, reading speed is fast, non-volatile advantages such as (non-volatile).Therefore, many iron property magnetoelectricity laminated film as polymorphic storage medium be fit to very much modern memory technology at a high speed, highdensity development trend, potential huge commercial value in following information industry.
One Chinese patent application 201010570946.3 discloses a kind of many iron property magnetoelectricity laminated film of full perovskite structure, but this thin film alignment is (100), and is two-layer composite, and does not have the function of polymorphic storage.
Summary of the invention
The object of the present invention is to provide a kind of simple in structure, compound multi-state memory cell of magnetoelectricity that four attitude output characteristics are good and preparation method thereof.The compound multi-state memory cell of this magnetoelectricity realizes that through changing composite film material residual polarization of many iron property magnetoelectricity and remanent magnetization direction data write; Induce the different data that realize of size and Orientation of magnetic electric compound material magnetoelectricity output voltage to read through alternating magnetic field, thereby realize the storage of four attitudes.
For realizing above-mentioned purpose, the present invention adopts following technical scheme:
The compound multi-state memory cell of a kind of magnetoelectricity is included in hearth electrode compound successively on the substrate, ferroelectric layer and top electrode, and said hearth electrode is a ferromagnetic layer, and said top electrode is that ferromagnetic layer or material are the thin layer of Ag, Au, Pt, Cu or Al; The material of said ferromagnetic layer is La
1-xSr
xMnM
yO
3, 0.15≤x≤0.5,0≤y≤0.1 wherein, M is at least a in Ag, Bi, Cu, Co, Ni and the Sc element; The material of said ferroelectric layer is BaTiO
3The material of said ferromagnetic layer and ferroelectric layer all has (110) orientation; Said ferromagnetic layer is 0.1-20 with the thickness ratio of ferroelectric layer.
(resistivity is generally 10 because the ferromagnetic layer in the compound multi-state memory cell of magnetoelectricity of the present invention at room temperature has good electrical conductivity
-2About Ω .cm), so this ferromagnetic layer can directly use as low/top electrode.
Ferromagnetic layer and ferroelectric layer are chosen the LaSrMnO with perovskite structure respectively in the compound multi-state memory cell of magnetoelectricity of the present invention
3Material and BaTiO
3Material, both structure matching property are better, and belong to oxide system, in heat treatment process, are not prone to phase reaction.Ferromagnetic layer LaSrMnO
3Can mix Ag, Bi, Cu, Co, Ni, Sc element in the material, wherein elements A g, Bi, Cu, Sc help improving LaSrMnO
3The electric conductivity of film, Co and Ni help improving LaSrMnO
3The temperature applicability of film.
In order to realize four attitude storage characteristicss, ferromagnetic layer should have suitably big HCJ H as much as possible under the room temperature
CjThereby, can when data are read, apply one less than H
CjBias magnetic field change the remanent magnetization direction of ferromagnetic layer export signal so that distinguish the magnetoelectricity of the storage unit that residual polarization and remanent magnetization direction be contrary.The inventor discovers at room temperature the LaSrMnO of (110) orientation
3The H of film
CjGenerally, can satisfy the requirement of four attitudes storage preferably, and work as LaSrMnO greater than 2.5kA/m
3The H of film
Cj, data can distinguish the magnetoelectricity output signal of same electrical polarization direction during greater than 5.0kA/m when reading better.Yet (100) LaSrMnO of orientation
3The H of film
CjBe generally less than 2.5kA/m, when reading the magnetoelectricity output signal of same electrical polarization direction, occur easily obscuring or mistake.Therefore, the texture that the present invention forms the ferromagnetic layer of the compound multi-state memory cell of magnetoelectricity is preferably (110) orientation, the HCJ 2.5kA/m≤H of ferromagnetic layer
Cj≤40kA/m.
Ferromagnetic layer is very bigger to the magnetoelectricity output characteristics influence of magnetic electric compound material than η with the thickness of ferroelectric layer among the present invention.The inventor discovers: when η magnetoelectricity conversion coefficient less than 0.1 time less; Four attitude output characteristics are relatively poor; The compound multi-state memory cell of magnetoelectricity has four attitude output characteristics preferably when 2.1≤η≤5; Four attitude output characteristics change not obviously when 5＜η≤20, and when η four attitude output characteristics variation on the contrary greater than 20 time, are unfavorable for storing data and read.Therefore thickness 0.1≤η≤20 of ferromagnetic layer and ferroelectric layer among the present invention are preferably 2.1≤η≤5.
The gross thickness of ferromagnetic layer and ferroelectric layer is preferably less than 1 μ m, by LaSrMnO among the present invention
3With BaTiO
3The thick magnetoelectricity laminated film of forming of hundreds of nanometers can have been exported the voltage signal of tens μ V under the AC magnetic field of 10Oe; Can satisfy the needs that data are read fully; And when the thickness of laminated film surpasses 1 μ m; The interface coupling coefficient of ferroelectric layer and ferromagnetic layer descends, and causes the magnetoelectricity conversion performance to descend on the contrary, and considers that from the angle of memory fabrication technology the gross thickness of laminated film also is no more than 1 μ m.
The big more magnetoelectricity changing voltage of the relative dielectric constant of ferroelectric phase is more little in theory, and less relative dielectric constant helps improving the magnetoelectricity output voltage of magnetoelectricity laminated film.The inventor discovers: thickness is at tens BaTiO to hundreds of nanometers
3The relative dielectric constant ε of film
rBe generally 50-800 (under the 1000Hz), and work as ε
rIts laminated film has magnetoelectricity output characteristics preferably during for 150-300, and the data that relatively are fit to the magnetoelectricity storer are read.Therefore, the relative dielectric constant of ferromagnetic layer is preferably 50≤ε r≤800, more preferably 150≤ε among the present invention
r≤300.
Because single crystal La AlO
3, SrTiO
3Or (LaSr) (AlTa) O
3Material is perovskite structure, and easier epitaxial growth goes out to have the LaSrMnO of (110) orientation of perovskite structure on such substrate of (110) orientation
3/ BaTiO
3Laminated film.Therefore, the preferred backing material of the present invention is LaAlO
3, SrTiO
3Or (La
1-xSr
x) (Al
1-yTay) O
3The monocrystalline of (110) orientation, 0.15≤x≤0.5,0.15≤y≤0.5 wherein.
In the present invention, when the material of top electrode is selected Ag, Au, Pt, Cu or Al, be preferably the Ag thin layer.
The present invention also provides the preparation method of the compound multi-state memory cell of a kind of said magnetoelectricity; When top electrode is that material is when being the thin layer of Ag, Au, Pt, Cu or Al; Comprise the steps: under 600-800 ℃ on substrate deposited iron magnetosphere film and ferroelectric layer film successively, then in oxygen atmosphere in 700-860 ℃ of thermal treatment 30-120min; Again at ferroelectric layer surface deposition top electrode film;
When top electrode is ferromagnetic layer, comprise the steps: under 600-800 ℃ on substrate deposited iron magnetosphere film, ferroelectric layer film and ferromagnetic layer film successively, then in oxygen atmosphere in 700-860 ℃ of thermal treatment 30-120min;
Described deposition process is magnetron sputtering, pulsed laser deposition, ion beam sputtering or ion plating.
The invention has the advantages that:
Ferromagnetic, the ferroelectric two phase structure in magnetoelectricity composite memory provided by the invention unit matees and the interface coupling is better, Composition Control is easy, preparation technology is simple; Not only realized the polymorphic memory function of data; And have that the storage data are non-volatile, data read simply, speed is fast, with advantages such as conventional semiconductor processing compatibility are better.
Description of drawings
Fig. 1 is the structural representation of the compound multi-state memory cell of magnetoelectricity of the present invention.Wherein, 1 is top electrode, and 2 is ferroelectric layer, and 3 is ferromagnetic layer, and 4 is substrate.
Embodiment
Below with instance the present invention is described further.Protection domain of the present invention does not receive the restriction of these embodiment, and protection domain of the present invention is determined by claims.
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 200nm
0.5Sr
0.5MnO
3Film and thickness are the BaTiO of 10nm
3(mode of deposition is: operating air pressure is 0.5Pa to film, Ar and O
2Throughput ratio be 16: 4, sputtering power is 100W, underlayer temperature is 600 ℃, target-substrate distance is 70mm), again with film 700 ℃ of thermal treatment 60min under oxygen atmosphere, and then adopt magnetron sputtering technique at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, and (mode of deposition is: operating air pressure is 1Pa; Ar gas atmosphere; Sputtering power is 100W, and underlayer temperature is 23 ℃, and target-substrate distance is 70mm); Again three layers of laminated film are etched into four storage unit that size is identical, the bottom La of each storage unit
0.5Sr
0.5MnO
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The measurement of memory cell: relative dielectric constant ε
rMeasure HCJ H with the accurate electric impedance analyzer of Agilent 4294A type
CjMeasure with many merits of VersLab magnetic measurement systems, crystal orientation is measured with the SmartLab X-ray diffractometer, and the magnetoelectricity changing voltage is measured with Signal recovery 7265 digital lock-in amplifiers.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 3kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 3kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 1.5kA/m (less than H
CjGet final product); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 1 (above-mentioned all measurements are all carried out, and following examples are identical) under 23 ℃.
Table 1
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 50 | 20 | 2.5 | 0.14 |
| 2 | 110 | 50 | 20 | 2.5 | -0.11 |
| 3 | 110 | 50 | 20 | 2.5 | -0.15 |
| 4 | 110 | 50 | 20 | 2.5 | 0.10 |
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(001) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 200nm
0.5Sr
0.5MnO
3Film and thickness are the BaTiO of 10nm
3Film (mode of deposition is with embodiment 1) again with film 700 ℃ of thermal treatment 60min under oxygen atmosphere, and then adopts magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.5Sr
0.5MnO
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 2kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 2kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 0.2kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 2.
Table 2
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 001 | 45 | 20 | 1.5 | 0.12 |
| 2 | 001 | 45 | 20 | 1.5 | -0.10 |
| 3 | 001 | 45 | 20 | 1.5 | -0.11 |
| 4 | 001 | 45 | 20 | 1.5 | 0.09 |
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts pulsed laser deposition (PLD) prepared.(110) orientation SrTiO that is cleaning up at first, earlier
3Using PLD method difference deposit thickness on the substrate is the La of 20nm
0.85Sr
0.15MnAg
0.1O
3Film and thickness are the BaTiO of 200nm
3(mode of deposition is film: high purity oxygen gas atmosphere; Operating air pressure is 10Pa, each pulsed laser energy 280mJ, pulsed frequency 10Hz; Underlayer temperature is 800 ℃; Target-substrate distance is 50mm), again with film 860 ℃ of thermal treatment 30min under oxygen atmosphere, and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.85Sr
0.15MnAg
0.1O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 5.0kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 5.0kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.
(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 1.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 3.
Table 3
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 172 | 0.1 | 3.1 | ?0.22 |
| 2 | 110 | 172 | 0.1 | 3.1 | ?-0.15 |
| 3 | 110 | 172 | 0.1 | 3.1 | ?-0.21 |
| 4 | 110 | 172 | 0.1 | 3.1 | ?0.12 |
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts pulsed laser deposition (PLD) prepared.(110) orientation SrTiO that is cleaning up at first, earlier
3Using PLD method difference deposit thickness on the substrate is the La of 15nm
0.85Sr
0.15MnAg
0.1O
3Film and thickness are the BaTiO of 200nm
3(mode of deposition is film: high purity oxygen gas atmosphere; Operating air pressure is 10Pa, each pulsed laser energy 280mJ, pulsed frequency 10Hz; Underlayer temperature is 800 ℃; Target-substrate distance is 50mm), again with film 860 ℃ of thermal treatment 30min under oxygen atmosphere, and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.85Sr
0.15MnAg
0.1O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 5.0kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 5.0kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 1.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 4.
Table 4
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 50 | 0.075 | 3.2 | ?0.15 |
| 2 | 110 | 50 | 0.075 | 3.2 | ?-0.14 |
| 3 | 110 | 50 | 0.075 | 3.2 | ?-0.16 |
| 4 | 110 | 50 | 0.075 | 3.2 | ?0.13 |
Embodiment 5
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 210nm
0.5Sr
0.5MnO
3Film and thickness are the BaTiO of 10nm
3Film (mode of deposition is with embodiment 1) again with film 700 ℃ of thermal treatment 60min under oxygen atmosphere, and then adopts magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.5Sr
0.5MnO
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 5kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 5kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 0.2kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 5.
Table 5
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 150 | 21 | 2.5 | 0.11 |
| 2 | 110 | 150 | 21 | 2.5 | -0.10 |
| 3 | 110 | 150 | 21 | 2.5 | -0.11 |
| 4 | 110 | 150 | 21 | 2.5 | 0.09 |
Embodiment 6
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 210nm
0.70Sr
0.30MnBi
0.05O
3Film and thickness are the BaTiO of 100nm
3(mode of deposition is: operating air pressure is 1.5Pa to film, and the throughput ratio of Ar and O2 is 16: 4, and sputtering power is 100W; Underlayer temperature is 800 ℃; Target-substrate distance is 70mm), again with film 860 ℃ of thermal treatment 30min under oxygen atmosphere, and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.70Sr
0.30MnBi
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε r of memory cell, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 6.
Table 6
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 150 | 2.1 | 5.0 | ?0.56 |
| 2 | 110 | 150 | 2.1 | 5.0 | ?-0.23 |
| 3 | 110 | 150 | 2.1 | 5.0 | ?-0.55 |
| 4 | 110 | 150 | 2.1 | 5.0 | ?0.25 |
Embodiment 7
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 210nm
0.67Sr
0.33MnBi
0.05O
3Film and thickness are the BaTiO of 100nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.67Sr
0.33MnBi
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 7.
Table 7
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 150 | 2.1 | 5.6 | ?0.67 |
| 2 | 110 | 150 | 2.1 | 5.6 | ?-0.33 |
| 3 | 110 | 150 | 2.1 | 5.6 | ?-0.65 |
| 4 | 110 | 150 | 2.1 | 5.6 | ?0.32 |
Embodiment 8
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 500nm
0.67Sr
0.33MnBi
0.05O
3Film and thickness are the BaTiO of 100nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.67Sr
0.33MnBi
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 8.
Table 8
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 150 | 5.0 | 5.6 | ?0.72 |
| 2 | 110 | 150 | 5.0 | 5.6 | ?-0.35 |
| 3 | 110 | 150 | 5.0 | 5.6 | ?-0.72 |
| 4 | 110 | 150 | 5.0 | 5.6 | ?0.32 |
Embodiment 9
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 350nm
0.67Sr
0.33MnBi
0.05O
3Film and thickness are the BaTiO of 100nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.67Sr
0.33MnBi
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 9.
Table 9
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 150 | 3.5 | 5.6 | 0.85 |
| 2 | 110 | 150 | 3.5 | 5.6 | -0.45 |
| 3 | 110 | 150 | 3.5 | 5.6 | -0.82 |
| 4 | 110 | 150 | 3.5 | 5.6 | 0.43 |
Embodiment 10
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts pulsed laser deposition (PLD) prepared.(110) orientation SrTiO that is cleaning up at first, earlier
3Use the PLD method to distinguish the La that deposit thickness is 150nm successively on the substrate
0.67Sr
0.33MnAg
0.01Co
0.01O
3Film, thickness are the BaTiO of 100nm
3Film and thickness are the La of 150nm
0.67Sr
0.33MnAg
0.01Co
0.01O
3(mode of deposition is: high purity oxygen gas atmosphere, operating air pressure are 5Pa to film, each pulsed laser energy 280mJ; Pulsed frequency 10Hz; Underlayer temperature is 700 ℃, and target-substrate distance is 50mm), again with film 800 ℃ of thermal treatment 120min under oxygen atmosphere; Again three layers of laminated film are etched into four storage unit that size is identical, the bottom of each storage unit and top layer La
0.67Sr
0.33MnAg
0.01Co
0.01O
3Film is as hearth electrode and top electrode, and four unit promptly can be used as four independently storage unit behind top electrode and the hearth electrode line.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 10.
Table 10
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 156 | 3.0 | 5.2 | ?0.66 |
| 2 | 110 | 156 | 3.0 | 5.2 | ?-0.35 |
| 3 | 110 | 156 | 3.0 | 5.2 | ?-0.65 |
| 4 | 110 | 156 | 3.0 | 5.2 | 0.34 |
Embodiment 11
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 660nm
0.60Sr
0.40MnSc
0.05O
3Film and thickness are the BaTiO of 300nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.60Sr
0.40MnSc
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 11.
Table 11
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 900 | 2.2 | 4.8 | ?0.32 |
| 2 | 110 | 900 | 2.2 | 4.8 | ?-0.35 |
| 3 | 110 | 900 | 2.2 | 4.8 | ?-0.35 |
| 4 | 110 | 900 | 2.2 | 4.8 | ?0.31 |
Embodiment 12
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 440nm
0.60Sr
0.40MnSc
0.005O
3Film and thickness are the BaTiO of 200nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.60Sr
0.40MnSc
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 12.
Table 12
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 800 | 2.2 | 4.8 | ?0.44 |
| 2 | 110 | 800 | 2.2 | 4.8 | ?-0.32 |
| 3 | 110 | 800 | 2.2 | 4.8 | ?-0.46 |
| 4 | 110 | 800 | 2.2 | 4.8 | ?0.33 |
Embodiment 13
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 330nm
0.60Sr
0.40MnSc
0.05O
3Film and thickness are the BaTiO of 150nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.60Sr
0.40MnSc
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 13.
Table 13
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 300 | 2.2 | 4.8 | ?0.64 |
| 2 | 110 | 300 | 2.2 | 4.8 | ?-0.41 |
| 3 | 110 | 300 | 2.2 | 4.8 | ?-0.65 |
| 4 | 110 | 300 | 2.2 | 4.8 | ?0.40 |
Embodiment 14
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation LaAlO that is cleaning up at first, earlier
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 400nm
0.60Sr
0.40MnSc
0.05O
3Film and thickness are the BaTiO of 180nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.60Sr
0.40MnSc
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 14.
Table 14
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 220 | 2.2 | 4.8 | ?0.66 |
| 2 | 110 | 220 | 2.2 | 4.8 | ?-0.40 |
| 3 | 110 | 220 | 2.2 | 4.8 | ?-0.65 |
| 4 | 110 | 220 | 2.2 | 4.8 | ?0.42 |
Embodiment 15
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation (La that is cleaning up at first, earlier
0.3Sr
0.7) (Al
0.65Ta
0.35) O
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 350nm
0.67Sr
0.33MnBi
0.05O
3Film and thickness are the BaTiO of 100nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 100nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.67Sr
0.33MnBi
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 6kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 6kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 15.
Table 15
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 150 | 3.5 | 5.6 | ?0.88 |
| 2 | 110 | 150 | 3.5 | 5.6 | ?-0.42 |
| 3 | 110 | 150 | 3.5 | 5.6 | ?-0.85 |
| 4 | 110 | 150 | 3.5 | 5.6 | ?0.46 |
Embodiment 16
The compound multi-state memory cell of the magnetoelectricity of present embodiment adopts the magnetron sputtering technique preparation.(110) orientation (La that is cleaning up at first, earlier
0.3Sr
0.7) (Al
0.65Ta
0.35) O
3Using magnetically controlled sputter method difference deposit thickness on the substrate is the La of 5nm
0.67Sr
0.33MnBi
0.05O
3Film and thickness are the BaTiO of 2nm
3Film (mode of deposition is with embodiment 6), and then adopt magnetron sputtering technique with embodiment 1 at BaTiO
3Film surface deposits the Ag film that a layer thickness is 30nm, again three layers of laminated film is etched into four storage unit that size is identical, the bottom La of each storage unit
0.67Sr
0.33MnBi
0.05O
3As top electrode, four unit promptly can be used as four independently storage unit to film behind top electrode and the hearth electrode line as hearth electrode, top layer Ag film.
The relative dielectric constant ε of memory cell
r, HCJ H
Cj, crystal orientation, magnetoelectricity changing voltage measuring method with embodiment 1.
Memory cell magnetoelectricity four attitude output characteristics measuring methods are: (1) data write: it is 1,2,3, No. 4 that above-mentioned four storage unit are compiled respectively; Carry out saturated polarization with No. 2 unit along the direction that makes progress perpendicular to face with No. 1 earlier; No. 3 with No. 4 unit along carrying out saturated polarization perpendicular to the downward direction of face, the magnetic field that then No. 1 and No. 3 directions of unit along parallel membrane towards the right side is applied 50kA/m is (greater than H
Cj) magnetize, No. 2 and No. 4 directions of unit along parallel membrane towards a left side are applied 50kA/m (greater than H
Cj) magnetic field magnetize, like this because different four storage unit of residual electric polarization and remanence polarized state promptly have been written into four various signals.(2) data are read: four storage unit place respectively along parallel membrane towards right-hand bias magnetic field to big or small 2.5kA/m (less than H
Cj); Apply the AC magnetic field of 1kHz size 80A/m then along parallel face direction; Measure the magnetoelectricity changing voltage size and the phase place of each unit with lock-in amplifier, phase place is used for the positive and negative of regulation magnetoelectricity changing voltage, then can read four kinds of different magnetoelectricity changing voltages.Measurement result is seen table 16.
Table 16
| Element number | Orientation | ε r | Thickness compares η | H cj(kA/m) | Magnetoelectricity voltage (μ V) |
| 1 | 110 | 60 | 2.5 | 40 | ?0.12 |
| 2 | 110 | 60 | 2.5 | 40 | ?-0.08 |
| 3 | 110 | 60 | 2.5 | 40 | ?-0.13 |
| 4 | 110 | 60 | 2.5 | 40 | ?0.07 |
Claims (12)
1. the compound multi-state memory cell of magnetoelectricity is characterized in that, is included in hearth electrode compound successively on the substrate, ferroelectric layer and top electrode, and it is La that said hearth electrode and top electrode are material
1-xSr
xMnM
yO
3Ferromagnetic layer, 0.15≤x≤0.5,0≤y≤0.1 wherein, M is at least a in Ag, Bi, Cu, Co, Ni and the Sc element; The material of said ferroelectric layer is BaTiO
3The material of said ferromagnetic layer and ferroelectric layer all has (110) orientation; Said ferromagnetic layer is 0.1～20 with the thickness ratio of ferroelectric layer.
2. the compound multi-state memory cell of magnetoelectricity is characterized in that, is included in hearth electrode compound successively on the substrate, ferroelectric layer and top electrode, and said hearth electrode is that material is La
1-xSr
xMnM
yO
3Ferromagnetic layer, 0.15≤x≤0.5,0≤y≤0.1 wherein, M is at least a in Ag, Bi, Cu, Co, Ni and the Sc element; The material of said ferroelectric layer is BaTiO
3Said top electrode is that material is the thin layer of Ag, Au, Pt, Cu or Al; The material of said ferromagnetic layer and ferroelectric layer all has (110) orientation; Said ferromagnetic layer is 0.1～20 with the thickness ratio of ferroelectric layer.
3. the compound multi-state memory cell of magnetoelectricity according to claim 1 and 2 is characterized in that the material of said ferromagnetic layer and ferroelectric layer all has perovskite structure.
4. the compound multi-state memory cell of magnetoelectricity according to claim 1 and 2 is characterized in that: the HCJ 2.5kA/m≤H of said ferromagnetic layer
Cj≤40kA/m.
5. the compound multi-state memory cell of magnetoelectricity according to claim 1 and 2 is characterized in that: the thickness of said ferromagnetic layer and ferroelectric layer is than 2.1～5.
6. the compound multi-state memory cell of magnetoelectricity according to claim 1 and 2 is characterized in that: the gross thickness of said ferromagnetic layer and ferroelectric layer is less than 1 μ m.
7. the compound multi-state memory cell of magnetoelectricity according to claim 1 and 2 is characterized in that: the relative dielectric constant of said ferroelectric layer is 50～800.
8. the compound multi-state memory cell of magnetoelectricity according to claim 7 is characterized in that: the relative dielectric constant of said ferroelectric layer is 150～300.
9. the compound multi-state memory cell of magnetoelectricity according to claim 1 and 2 is characterized in that: said backing material is LaAlO
3, SrTiO
3Or (La
1-xSr
x) (Al
1-yTa
y) O
3(110) oriented single crystal, 0.15≤x≤0.5,0.15≤y≤0.5 wherein.
10. the preparation method of the compound multi-state memory cell of the described magnetoelectricity of claim 1 is characterized in that comprising the steps:
Under 600-800 ℃ on substrate deposited iron magnetosphere film, ferroelectric layer film and ferromagnetic layer film successively, then in oxygen atmosphere in 700-860 ℃ of thermal treatment 30-120min.
11. the preparation method of the compound multi-state memory cell of the described magnetoelectricity of claim 2 is characterized in that comprising the steps:
Under 600-800 ℃ on substrate deposited iron magnetosphere film and ferroelectric layer film successively, then in oxygen atmosphere in 700-860 ℃ of thermal treatment 30-120min; Again at ferroelectric layer surface deposition top electrode film.
12. according to claim 10 or 11 described preparation methods, it is characterized in that: described deposition process is magnetron sputtering, pulsed laser deposition, ion beam sputtering or ion plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210212556.8A CN102768854B (en) | 2012-06-21 | 2012-06-21 | A kind of magnetoelectric composite multi-state memory unit and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210212556.8A CN102768854B (en) | 2012-06-21 | 2012-06-21 | A kind of magnetoelectric composite multi-state memory unit and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102768854A true CN102768854A (en) | 2012-11-07 |
| CN102768854B CN102768854B (en) | 2015-07-29 |
Family
ID=47096225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210212556.8A Expired - Fee Related CN102768854B (en) | 2012-06-21 | 2012-06-21 | A kind of magnetoelectric composite multi-state memory unit and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102768854B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762273A (en) * | 2016-03-03 | 2016-07-13 | 天津理工大学 | Magnetoelectric storage unit based on double-layer ferroelectric film, and preparation method for magnetoelectric storage unit |
| CN109215705A (en) * | 2018-09-12 | 2019-01-15 | 山东大学 | A method of the multidomain structure controlling ferromagnetic monofilm realizes the storage of ten state data |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720188A (en) * | 2016-03-03 | 2016-06-29 | 天津理工大学 | Magnetoelectric effect based magnetoelectric memory element of ferroelectric/ferromagnetic composite thin film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071399A (en) * | 2011-02-23 | 2011-05-25 | 北京工业大学 | All-perovskite multiferroic magnetoelectric compound film and preparation method thereof |
| US20110149670A1 (en) * | 2009-12-21 | 2011-06-23 | Samsung Electronics Co., Ltd. | Spin valve device including graphene, method of manufacturing the same, and magnetic device including the spin valve device |
| CN102299256A (en) * | 2011-07-18 | 2011-12-28 | 清华大学 | Magnetoelectric random memory cell and magnetoelectric random memory comprising same |
-
2012
- 2012-06-21 CN CN201210212556.8A patent/CN102768854B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110149670A1 (en) * | 2009-12-21 | 2011-06-23 | Samsung Electronics Co., Ltd. | Spin valve device including graphene, method of manufacturing the same, and magnetic device including the spin valve device |
| CN102071399A (en) * | 2011-02-23 | 2011-05-25 | 北京工业大学 | All-perovskite multiferroic magnetoelectric compound film and preparation method thereof |
| CN102299256A (en) * | 2011-07-18 | 2011-12-28 | 清华大学 | Magnetoelectric random memory cell and magnetoelectric random memory comprising same |
Non-Patent Citations (2)
| Title |
|---|
| 何泓材等: "多铁性磁电复合薄膜", 《科学通报》, vol. 53, no. 10, 30 May 2008 (2008-05-30), pages 1136 - 1148 * |
| 李廷先等: "Si(100)衬底上(110)取向La2/3Sr1/3MnO3薄膜的制备与性能", 《中国有色金属学报》, vol. 21, no. 11, 30 November 2011 (2011-11-30), pages 2857 - 2862 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762273A (en) * | 2016-03-03 | 2016-07-13 | 天津理工大学 | Magnetoelectric storage unit based on double-layer ferroelectric film, and preparation method for magnetoelectric storage unit |
| CN105762273B (en) * | 2016-03-03 | 2018-07-24 | 天津理工大学 | A kind of magnetoelectricity storage unit and preparation method thereof based on double-layer ferro-electricity film |
| CN109215705A (en) * | 2018-09-12 | 2019-01-15 | 山东大学 | A method of the multidomain structure controlling ferromagnetic monofilm realizes the storage of ten state data |
| CN109215705B (en) * | 2018-09-12 | 2021-08-20 | 山东大学 | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102768854B (en) | 2015-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8669122B2 (en) | Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained | |
| CN109300495A (en) | Magnetic texure and SOT-MRAM based on artificial antiferromagnetic free layer | |
| US7283386B2 (en) | Voltage-controlled magnetization reversal writing type magnetic random access memory device and method of writing and reading information using the same | |
| Hou et al. | A ferroelectric memristor based on the migration of oxygen vacancies | |
| CN108475725A (en) | The multilayered structure of the Film roughness of magnetic devices can be reduced | |
| WO2017212895A1 (en) | Magnetic tunnel junction element and magnetic memory | |
| CN102945922B (en) | Multifunctional spinning memory resistor device capable of combining memory resistor and tunneling magneto-resistor and preparation method | |
| JP4701427B2 (en) | Switching element and array type functional element using the same | |
| JP2002111094A (en) | Magnetoresistive element, and magnetic sensor and memory comprising the magnetoresistive element | |
| WO2006030814A1 (en) | Resistance variable element and nonvolatile memory | |
| CN102768854B (en) | A kind of magnetoelectric composite multi-state memory unit and preparation method thereof | |
| CN105633275A (en) | Perpendicular type STT-MRAM (spin-transfer torque magnetic random access memory) memory unit and read-write method therefor | |
| CN102683581B (en) | Voltage-adjustable reluctance-variable random memory cell and random memory | |
| US7485937B2 (en) | Tunnel junction device | |
| CN107240642A (en) | A kind of complementary type resistance-variable storing device and preparation method thereof | |
| US10014013B2 (en) | L10-ordered MnAl thin films with high perpendicular magnetic anisotropy, and structures and devices made therewith | |
| US6590268B2 (en) | Magnetic control device, and magnetic component and memory apparatus using the same | |
| Wu et al. | Nonvolatile eight-state memory prototype based on single-phase multiferroic hexaferrite at room temperature | |
| US20230197132A1 (en) | Doping Process To Refine Grain Size For Smoother BiSb Film Surface | |
| TWI773711B (en) | Memory | |
| CN102738391B (en) | Resistance random access memory with adjustable dielectric layer magnetic property | |
| KR20200137359A (en) | Electric-Field Controlled Magnetoresistive Random Access Memory | |
| CN109994599A (en) | Piezoelectric type magnetic RAM and preparation method thereof | |
| Mudinepalli et al. | Electric-field effects on magnetism of Fe/NCZF/PZT composite thin film | |
| JP2000357828A (en) | Ferromagnetic oxide and magnetoresistance element wherein the same is used |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: GRIREM ADVANCED MATERIALS CO., LTD. Free format text: FORMER OWNER: BEIJING CENTRAL INST.OF THE NONFERROUS METAL Effective date: 20130802 Free format text: FORMER OWNER: GRIREM ADVANCED MATERIALS CO., LTD. Effective date: 20130802 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20130802 Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant after: Grirem Advanced Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: General Research Institute for Nonferrous Metals Applicant before: Grirem Advanced Materials Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150729 Termination date: 20200621 |