CN109994599A - Piezoelectric type magnetic RAM and preparation method thereof - Google Patents
Piezoelectric type magnetic RAM and preparation method thereof Download PDFInfo
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- CN109994599A CN109994599A CN201711498335.0A CN201711498335A CN109994599A CN 109994599 A CN109994599 A CN 109994599A CN 201711498335 A CN201711498335 A CN 201711498335A CN 109994599 A CN109994599 A CN 109994599A
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- G—PHYSICS
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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Abstract
Present disclose provides a kind of piezoelectric type magnetic RAMs and preparation method thereof, piezoelectric membrane is set to generate deformation by applying voltage to piezoelectric layer both ends, the deformation is transferred in magnetic free layer, magnetic free layer magnetic moment in magnetic tunnel-junction is controlled to occur 90 ° or overturn close to 90 °, magnetic moment including magnetic free layer in Vertical tunnel knot turns to (the Vertical to Parallel of direction in face from perpendicular to layer surface, V-P type), or the magnetic moment of magnetic free layer occurs 90 ° or close to 90 ° of overturning (Parallel to Parallel in face, P-P type), by the variation for testing magnetic tunnel-junction both end voltage, obtain the variation of tunneling resistance, and then realize the write-in of information.The disclosure does not use high-density current and realizes magnetic free layer magnetization reversal traditional approach, and energy consumption is effectively reduced, and fuel factor is effectively controlled, and then extends the working life of device.
Description
Technical field
This disclosure relates to information technology and microelectronic field more particularly to a kind of piezoelectric type magnetic RAM and its system
Preparation Method.
Background technique
It spin-transfer torque-magnetic random memory (STT-MARM) for being greatly developed on Current commercial and is ground also in laboratory
The spin(-)orbit square studied carefully-magnetic random memory (SOT-MRAM), is all based on the magnetized overturning of magnetic free layer in storage unit, leads
The change for causing magneto-resistor has many advantages, such as that speed is fastly and non-volatile to realize the store function of information.
But since the magnetization reversal of magnetic free layer in such random access memory is by electric current realization, it usually needs very
High current density (105-107A/cm2) be just able to achieve, it is excessive that this does not only result in energy consumption, and fuel factor can also greatly reduce
The service life of storage unit.
In order to reduce the energy consumption of entire device, the working life of device is improved, usually there are two approach to realize: first is
The current density of regulation magnetic free layer magnetization reversal is greatly lowered to reduce energy consumption；Second is to realize tunnel junctions merely with voltage
The magnetization reversal of middle magnetic free layer has speed fast, low power consumption and other advantages using the overturning of piezoelectric effect regulation magnetic moment.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of piezoelectric type magnetic RAMs and preparation method thereof, at least partly to solve the above institute
The technical issues of proposition.
(2) technical solution
According to one aspect of the disclosure, a kind of piezoelectric type magnetic RAM and preparation method thereof is provided.
A kind of piezoelectric type magnetic RAM, is in the form of a column structure comprising: substrate；Bottom electrode layer is formed in substrate
On；Piezoelectric layer is formed on bottom electrode layer；Piezoelectric layer is divided into several piezoelectric unit blocks；Buffer layer is formed in the pressure
In electric layer；Magnetic tunnel-junction is formed on the buffer layer, and the magnetic tunnel-junction is divided into several magnetic tunnel junction cells, magnetic tunnel-junction
Include: magnetic free layer, is formed on the buffer layer；Tunneling insulation layer is formed on magnetic free layer, is sull；
And fixed magnetic layer, it is deposited on tunneling insulation layer；Inverse ferric magnetosphere is formed on fixed magnetic layer；And protective layer,
It is formed on inverse ferric magnetosphere.
In some embodiments of the present disclosure, further includes: oxide layer, the oxide layer are filled in the piezoelectric unit respectively
Between block between the magnetic tunnel-junction；The oxide layer being filled between the piezoelectric unit block is oxide S iO2/AlOx；It is filled in institute
Stating the oxide layer between magnetic tunnel-junction is oxide M gO/AlOx。
In some embodiments of the present disclosure, each piezoelectric unit block corresponds to independent magnetic tunnel junction cell, and every
A piezoelectric unit block can be independently applied voltage.
In some embodiments of the present disclosure, the direction of magnetization of the fixed magnetic layer is constant, the fixed magnetic layer magnetic
Anisotropy be perpendicular to layer surface direction, and it is arranged in parallel；The direction of magnetization of the magnetic free layer is variable, and magnetic free layer magnetic is each
Anisotropy is arranged in parallel, and under regulating and controlling voltage, magnetic free layer total magnetization direction can be by the directional steering face perpendicular to layer surface
Interior direction；Add opposite direction voltage, and can make to go in face or close to the magnetization in direction in face perpendicular to surface direction.
In some embodiments of the present disclosure, the direction of magnetization of the fixed magnetic layer is constant, the fixed magnetic layer magnetic
Change the direction along face to fix, and keeping parallelism arranges；The magnetic moment keeping parallelism of the magnetic free layer arranges, and its direction of magnetization
Variable, magnetic free layer direction of magnetization generating surface varus under regulating and controlling voltage turns, can be from parallel/close magnetization for being parallel to fixing layer
Direction be turned to it is vertical/be approximately perpendicular to the direction of magnetization of fixing layer.
In some embodiments of the present disclosure, the flip angle of the magnetic free layer is 90 °.
In some embodiments of the present disclosure, the piezoelectric layer is piezoelectric thin-film structure, and material is perovskite structure pottery
Porcelain/perovskite type crystal structure or piezopolymer.
In some embodiments of the present disclosure, the piezoelectric layer with a thickness of 10~200 μm；The thickness of the tunneling insulation layer
Degree is 0.5~3nm.
A kind of preparation method of piezoelectric type magnetic RAM, comprising: step A: under high vacuum condition, in wafer substrate
One layer of metal conducting layer of upper homoepitaxial, as bottom electrode layer；Then in the case where keeping high vacuum condition, piezoelectric layer is grown；It is pressing
Pass through deposition and/or sputtering method, grown buffer layer in electric layer；Ferrimagnet is grown on the buffer layer, as magnetic tunnel-junction
Magnetic free layer；By the method for magnetron sputtering and/or deposition growing on magnetic free layer, growth thickness is the oxygen of 0.5~3nm
Change layer as tunneling insulation layer；On the tunneling insulation layer grown, the fixed magnetic layer and antiferromagnetic in magnetic tunnel-junction is grown
Layer；And protective layer is prepared on the magnetic tunnel-junction prepared.Step B: on the magnetic tunnel-junction grown, by photoetching and/
Or the method for electron beam etching method and wet etching and/or dry etching, strip hearth electrode arranged in parallel is prepared, and
The magnetic tunnel junction cell and corresponding piezoelectric unit block array being uniformly distributed on strip hearth electrode, and each piezoelectric unit
Only has a tunneling junction cell on block.Step C: between the magnetic tunnel junction cell and corresponding piezoelectric unit block prepared, lead to
Thermal oxide/sedimentation/sputtering method is crossed, insulating materials SiO is grown2/AlOxIt is filled in magnetic tunnel junction cell and corresponding piezoelectric unit
Between block, thickness is identical as piezoelectric unit block thickness, plays the role of that adjacent cells block is isolated.Step D: in insulating materials
SiO2/AlOxOne layer of metal of upper growth, connect each unit block between buffer layer, thickness it is identical as the buffer layer thickness of growth or
Person is less than buffer layer thickness, and is etched into perpendicular to hearth electrode orientation and the strip structure that is parallel to each other is as intermediate electricity
Pole, it is then concordant with protective layer upper surface by the method growth oxide layer of step C again, it fills between magnetic tunnel junction cell block
Gap.And step E: in insulating materials SiO2Or AlOxOne layer of metal of upper growth, connect each unit block between protective layer/
Top electrode, and be etched into and be parallel to hearth electrode orientation and the strip structure that is parallel to each other is as top electrode.
In some embodiments of the present disclosure, conductive layer, buffer layer, magnetic free layer, oxide layer, fixed magnetic layer, anti-iron
Magnetosphere and protective layer pass through sputtering and/or deposition method preparation in high vacuum conditions.
(3) beneficial effect
It can be seen from the above technical proposal that the piezoelectric type magnetic RAM of the disclosure at least has below beneficial to effect
One of fruit:
(1) in piezoelectric unit block piezoelectric layer design, using piezoelectricity regulate and control generate strain be transmitted in magnetic free layer, make it
Magnetization is flipped, and tunneling resistance is caused to change, and then realizes the write-in of information, and energy consumption is effectively reduced, extends the work of device
Service life.
(2) in magnetic tunnel-junction in magnetic free layer magnetic moment overturning mode, response device speed is substantially improved.
(3) design of the region division of piezoelectric unit block at multiple cell blocks individually regulated and controled, corresponding independent control piezoelectricity
The Magnetic moment reversal of free layer in cell block realizes the highly integrated of magnetic random memory function.
Detailed description of the invention
Fig. 1 is the three dimensional structure diagram of disclosure piezoelectric type magnetic RAM.
Fig. 2 be the disclosure be written based on the information of V-P type piezoelectric type magnetic RAM initial state/read schematic diagram.
Fig. 3 is that the disclosure is shown based on information write-in/reading of the V-P type piezoelectric type magnetic RAM in the case where applying voltage
It is intended to.
Fig. 4 be the disclosure be written based on the information of P-P type piezoelectric type magnetic RAM initial state/read schematic diagram.
Fig. 5 is that the disclosure is shown based on information write-in/reading of the P-P type piezoelectric type magnetic RAM in the case where applying voltage
It is intended to.
Specific embodiment
The disclosure makes piezoelectric membrane generate deformation by applying voltage to piezoelectric layer both ends, which is transferred to magnetic free layer
In, it controls magnetic free layer magnetic moment in magnetic tunnel-junction and occurs 90 ° or overturn close to 90 °, including magnetic free layer in Vertical tunnel knot
Magnetic moment is from turning to direction in face (Vertical to Parallel, V-P type) perpendicular to layer surface or the magnetic moment of magnetic free layer exists
90 ° occur in face or close to 90 ° of overturnings (Parallel to Parallel, P-P type), passes through test magnetic tunnel-junction both end voltage
Variation, obtain the variation of tunneling resistance, and then realize the write-in of information.It does not use high-density current and realizes magnetic free layer magnetic
Change overturning traditional approach, energy consumption is effectively reduced, fuel factor is effectively controlled, and then extends the working life of device.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
The piezoelectric type magnetic RAM that the disclosure provides.Fig. 1 is the three-dimensional of disclosure piezoelectric type magnetic random memory
Structural schematic diagram.As shown in Figure 1, comprising: substrate 100；Bottom electrode layer 200 is formed on the substrate 100；Piezoelectric layer
300 its be formed on the bottom electrode layer 200 comprising several piezoelectric unit blocks 310, the piezoelectric unit block 310 are formed in
On the bottom electrode layer 200, the buffer layer 400 is formed on the piezoelectric layer cell block 310, and magnetic tunnel-junction 500 is formed in
On the buffer layer 400, the magnetic tunnel-junction 500 includes several magnetic tunnel junction cells 510, and the magnetic tunnel junction cell 510 wraps
Magnetic free layer 511, tunneling insulation layer 512 and fixed magnetic layer 513 are included, the magnetic free layer 511 is formed on buffer layer 400,
The tunneling insulation layer 512 is formed on the magnetic free layer 511, and the fixed magnetic layer 513 is formed in the tunnelling insulation
On layer 512；The inverse ferric magnetosphere is formed on fixed magnetic layer 513, and the protective layer 600 is formed on inverse ferric magnetosphere.
It is finished above with respect to piezoelectric type magnetic RAM introduction in the present embodiment.
The disclosure provide piezoelectric type magnetic RAM the preparation method is as follows:
Step A: under high vacuum condition, one layer of the homoepitaxial uniform high-test metal conductive layer on wafer substrate 100,
As bottom electrode layer 200；Then in the case where keeping high vacuum condition, piezoelectric layer 300 is grown；On piezoelectric layer 300 by deposition and/
Or sputtering method, grown buffer layer 400；Ferrimagnet is grown on buffer layer 400, the magnetic as magnetic tunnel-junction 500 is free
Layer 511；By the method for magnetron sputtering and/or deposition growing on magnetic free layer 511, growth thickness is the oxidation of 0.5~3nm
Layer is used as tunneling insulation layer 512；On the tunneling insulation layer 512 grown, 513 He of fixed magnetic layer in magnetic tunnel-junction is grown
Inverse ferric magnetosphere；And protective layer 600 is prepared on the magnetic tunnel-junction 500 prepared.
Step B: on the magnetic tunnel-junction 500 grown, pass through photoetching and/or electron beam etching method and wet etching
And/or the method for dry etching, strip hearth electrode arranged in parallel is prepared, and the magnetic tunnel being uniformly distributed on strip hearth electrode
Road statement of account member 510 and corresponding 310 array of piezoelectric unit block, and only have a tunnel knot on each piezoelectric unit block 310
Unit 510.
Step C: between the magnetic tunnel junction cell 510 and corresponding piezoelectric unit block 310 prepared, by thermal oxide/
Sedimentation/sputtering method grows insulating materials SiO2/AlOxIt is filled in magnetic tunnel junction cell 510 and corresponding piezoelectric unit block 310
Between, thickness is identical as piezoelectric unit block thickness, plays the role of that adjacent cells block is isolated.
Step D: in insulating materials SiO2/AlOxOne layer of metal of upper growth connects the buffer layer 400 between each unit block, thick
It spends identical as 400 thickness of buffer layer of growth or is less than 400 thickness of buffer layer, and be etched into perpendicular to hearth electrode arrangement side
To and the strip structure that is parallel to each other as target, oxide layer and protective layer 600 are then grown by the method for step C again
Upper surface is concordant, fills the gap between magnetic tunnel junction cell block 510.
Step E: in insulating materials SiO2Or AIOxOne layer of metal of upper growth connects protective layer/top between each unit block
Electrode 600, and be etched into and be parallel to hearth electrode orientation and the strip structure that is parallel to each other is as top electrode.
It is main to select now relatively common piezoelectric material for piezoelectricity layer material, it is generally divided into unary system ceramics, such as titanium
Sour barium (BaTiO3, BTO)；Binary system ceramics, lead zirconate-titanate ceramic class (PbZrxTi1-xO3, PZT) and ternary system ceramics perovskite
Type crystal structure, such as (Pb (Mg1/3Nb2/3)O3-PbTiO3, PMN-PT) or piezopolymer (such as PVDF).By such piezoelectricity
Material, by growing methods, one layer of piezoelectric thin film layer with piezoelectric effect of growth such as depositing and/or sputtering.
Specific preparation method introduction above with respect to piezoelectric type magnetic RAM in the present embodiment finishes.
The magnetization side of magnetic free layer 511 and fixed magnetic layer 513 in externally-applied magnetic field initialization device is utilized after the completion of preparation
To.Fig. 2 is written/reads schematic diagram, such as Fig. 2 based on the information of V-P type piezoelectric type magnetic RAM initial state for the disclosure
Shown, for V-P type magnetic tunnel-junction, initialization can make the magnetic moment of magnetic free layer 511 and fixed magnetic layer 513 all parallels
Column, and perpendicular to layer surface, tunneling resistance is in low state at this time.Fig. 3 is that the disclosure is stored based on V-P type piezoelectric type magnetic random
Information of the device in the case where applying voltage is written/schematic diagram is read, as shown in figure 3, being applied by the piezoelectric material both ends in piezoelectric layer 300
Add the pulse voltage signal of different amplitudes, can effectively regulate and control piezoelectric material and be in different working conditions, i.e. piezoelectric material
The state of the compression or extension that can show.The detection for applying constant-current source I in magnetic tunnel-junction 500 for tunneling resistance is tested.
By the reading of voltage V value, tunneling resistance value is obtained.When the incoming level signal U on electrode piezoelectric material is a certain positive value arteries and veins
The magnetic moment of free layer 511 is realized after rushing signal, in magnetic tunnel-junction 500 is turned over by direction in the directional steering face perpendicular to layer surface
Turn, jumped so as to cause tunneling resistance, the signal of " 1 " is written in magnetic random memory, can be with by the variation of reading V value
Detect the variation of tunneling resistance.After incoming level signal U is low level pulse signal, magnetic free layer in magnetic tunnel-junction 500
511 magnetic moment restores, and resistance is caused to jump, and the signal of " 0 " is written in magnetic random memory, by reading the variation of V value, inspection
Measure the variation of tunneling resistance.
So far the present embodiment introduction finishes.
In another embodiment of the present disclosure, a kind of piezoelectric type magnetic RAM is provided.The present embodiment and aforementioned reality
Apply example to be compared to difference: the inceptive direction and magnetic free layer of magnetic free layer and fixed magnetic layer are strained the rotation side of generation
To change.
In the present embodiment, Fig. 4 be the disclosure based on P-P type piezoelectric type magnetic RAM initial state information write-in/
Read schematic diagram.As shown in figure 4, for P-P type magnetic tunnel-junction, initialization can make magnetic free layer 511 and fixed magnetic layer
513 magnetic moment direction and arranged in parallel all in face, tunneling resistance is in low state at this time.Fig. 5 is that the disclosure is based on P-P type piezoelectricity
Information of the formula magnetic RAM in the case where applying voltage is written/schematic diagram is read, as shown in figure 5, by piezoelectric layer 300
Piezoelectric material both ends apply the pulse voltage signal of different amplitudes, can effectively regulate and control piezoelectric material and be in different work shapes
The state of compression or extension that state, i.e. piezoelectric material can be shown.Apply constant-current source I in magnetic tunnel-junction 500 for tunnelling electricity
The detection of resistance is tested.By the reading of voltage V value, tunneling resistance value is obtained.As the incoming level signal U on electrode piezoelectric material
For it is a certain positive value pulse signal after, in magnetic tunnel-junction 500 free layer 511 magnetic moment realize in face occur 90 °/turned over close to 90 °
Turn, jumped so as to cause tunneling resistance, the signal of " 1 " is written in magnetic random memory, can be with by the variation of reading V value
Detect the variation of tunneling resistance.After incoming level signal U is low level pulse signal, magnetic free layer in magnetic tunnel-junction 500
511 magnetic moment restores, and resistance is caused to jump, and the signal of " 0 " is written in magnetic random memory, by reading the variation of V value, inspection
Measure the variation of tunneling resistance.
So far the present embodiment introduction finishes.
" the 90 degree of overturnings " of " magnetic moment ", " magnetocrystalline anisotropy " described in the disclosure etc. indicates the magnetocrystalline of magnetic free layer
After the opposite sex changes under piezoelectric strain effect, the total magnetization intensity externally showed changes into another party by a direction
To including but not limited to becoming in face direction from vertical direction or be changed to point to other direction in face by a direction in face.This
One variation includes the variation for any angle that its total magnetization intensity direction occurs, and is not limited only to 90 degree of variation.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of piezoelectric type magnetic RAM, is in the form of a column structure comprising:
Substrate；
Bottom electrode layer is formed over the substrate；
Piezoelectric layer is formed on the bottom electrode layer；The piezoelectric layer is divided into several piezoelectric unit blocks；
Buffer layer is formed on the piezoelectric layer；
Magnetic tunnel-junction is formed on the buffer layer, and the magnetic tunnel-junction is divided into several magnetic tunnel junction cells, the magnetic tunnel
Road knot includes:
Magnetic free layer is formed on the buffer layer；
Tunneling insulation layer is formed on magnetic free layer, is sull；And
Fixed magnetic layer is deposited on tunneling insulation layer；
Inverse ferric magnetosphere is formed on fixed magnetic layer；And
Protective layer is formed on the inverse ferric magnetosphere.
2. piezoelectric type magnetic RAM according to claim 1, further include:
Oxide layer, the oxide layer are filled between the piezoelectric unit block respectively between the magnetic tunnel-junction；It is filled in the pressure
Oxide layer between electric unit block is oxide S iO2/AlOx；The oxide layer being filled between the magnetic tunnel-junction is oxide M gO/
AlOx。
3. piezoelectric type magnetic RAM according to claim 1, wherein each piezoelectric unit block is corresponding independent
Magnetic tunnel junction cell, and each piezoelectric unit block can be independently applied voltage.
4. piezoelectric type magnetic RAM according to claim 1, wherein
The direction of magnetization of the fixed magnetic layer is constant, the fixed magnetic layer magnetic anisotropy be perpendicular to layer surface direction,
And it is arranged in parallel；
The direction of magnetization of the magnetic free layer is variable, and magnetic free layer magnetic anisotropy is arranged in parallel, and under regulating and controlling voltage, magnetic is free
Layer total magnetization direction can be by direction in the directional steering face perpendicular to layer surface；Add opposite direction voltage, and can make in face
Or the magnetization close to direction in face is gone to perpendicular to surface direction.
5. piezoelectric type magnetic RAM according to claim 1, wherein
The direction of magnetization of the fixed magnetic layer is constant, and fixed magnetic layer magnetization direction along face is fixed, and keeping parallelism
Arrangement；
The magnetic moment keeping parallelism of the magnetic free layer arranges, and its direction of magnetization is variable, and the magnetic free layer direction of magnetization is in voltage
Regulate and control lower generating surface varus to turn, can be approximately perpendicular to from parallel/direction of magnetization for being closely parallel to fixing layer is turned to vertically/solid
The direction of magnetization of given layer.
6. piezoelectric type magnetic RAM according to claim 5, wherein the flip angle of the magnetic free layer is
90°。
7. piezoelectric type magnetic RAM according to claim 1, wherein the piezoelectric layer is piezoelectric thin-film structure,
Material is perovskite structure ceramics/perovskite type crystal structure or piezopolymer.
8. piezoelectric type magnetic RAM according to claim 1, wherein the piezoelectric layer with a thickness of 10~200 μ
m；The tunneling insulation layer with a thickness of 0.5~3nm.
9. a kind of preparation method is used to prepare piezoelectric type magnetic RAM described in claim 1-8, comprising:
Step A: under high vacuum condition, one layer of metal conducting layer of homoepitaxial on wafer substrate, as bottom electrode layer；Then exist
It keeps under high vacuum condition, grows piezoelectric layer；Pass through deposition and/or sputtering method, grown buffer layer over the piezoelectric layer；It is buffering
Ferrimagnet is grown on layer, the magnetic free layer as magnetic tunnel-junction；Pass through magnetron sputtering and/or deposition life on magnetic free layer
Long method, growth thickness are the oxide layer of 0.5~3nm as tunneling insulation layer；On the tunneling insulation layer grown, growth
Fixed magnetic layer and inverse ferric magnetosphere in magnetic tunnel-junction；And protective layer is prepared on the magnetic tunnel-junction prepared；
Step B: it on the magnetic tunnel-junction grown, by photoetching and/or electron beam etching method and wet etching and/or does
The method of method etching, prepares strip hearth electrode arranged in parallel, and the magnetic channel statement of account being uniformly distributed on strip hearth electrode
First and corresponding piezoelectric unit block array, and only have a tunneling junction cell on each piezoelectric unit block；
Step C: between the magnetic tunnel junction cell and corresponding piezoelectric unit block prepared, pass through thermal oxide/sedimentation/sputtering
Method grows insulating materials SiO2/AlOxIt is filled between magnetic tunnel junction cell and corresponding piezoelectric unit block, thickness and piezoelectricity list
First block thickness is identical, plays the role of that adjacent cells block is isolated；
Step D: in insulating materials SiO2/AlOxOne layer of metal of upper growth connects the buffer layer between each unit block, thickness and life
Long buffer layer thickness is identical or is less than buffer layer thickness, and is etched into perpendicular to hearth electrode orientation and is parallel to each other
Strip structure as target, it is concordant with protective layer upper surface that oxide layer then grown by the method for step C again, is filled
Gap between magnetic tunnel junction cell block；And
Step E: in insulating materials SiO2Or AlOxOne layer of metal of upper growth connects protective layer/top electricity between each unit block
Pole, and be etched into and be parallel to hearth electrode orientation and the strip structure that is parallel to each other is as top electrode.
10. preparation method according to claim 9, conductive layer, buffer layer, magnetic free layer, oxide layer, fixed magnetic layer,
Inverse ferric magnetosphere and protective layer pass through sputtering and/or deposition method preparation in high vacuum conditions.
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| CN112993149A (en) * | 2021-02-06 | 2021-06-18 | 浙江驰拓科技有限公司 | Storage unit |
| CN113013324A (en) * | 2021-03-02 | 2021-06-22 | 浙江驰拓科技有限公司 | Magnetic storage unit and memory |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112993149A (en) * | 2021-02-06 | 2021-06-18 | 浙江驰拓科技有限公司 | Storage unit |
| CN113013324A (en) * | 2021-03-02 | 2021-06-22 | 浙江驰拓科技有限公司 | Magnetic storage unit and memory |
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