CN113013324A - Magnetic storage unit and memory - Google Patents
Magnetic storage unit and memory Download PDFInfo
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- CN113013324A CN113013324A CN202110229528.6A CN202110229528A CN113013324A CN 113013324 A CN113013324 A CN 113013324A CN 202110229528 A CN202110229528 A CN 202110229528A CN 113013324 A CN113013324 A CN 113013324A
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- 238000003860 storage Methods 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000009471 action Effects 0.000 claims abstract description 10
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 230000005641 tunneling Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 38
- 229910019236 CoFeB Inorganic materials 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 5
- 230000005398 magnetoelastic coupling Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001808 coupling effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
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- Mram Or Spin Memory Techniques (AREA)
Abstract
The invention relates to the field of magnetic storage, and discloses a magnetic storage unit and a magnetic storage, which comprise: the magnetic tunnel junction comprises a free layer, a tunneling layer, a fixed layer and a protective layer which are stacked in sequence, magnetic moments in the free layer and the fixed layer have vertical anisotropy, and the protective layer has a top electrode when the information of the magnetic storage unit is read; the spin current introducing layer is contacted with a free layer of the magnetic tunnel junction and is used for accessing a control current when information is written and also has a bottom electrode when the information of the magnetic storage unit is read; the substrate is used for generating strain for changing the direction of the magnetic moment of the free layer under the action of pulse voltage; and an electrode. The method obtains the residual strain according to the positive and negative of the pulse voltage, and the strain is maintained without voltage in the process of overturning the magnetic moment of the free layer, so that the method is an ultra-low power consumption adjusting mode.
Description
Technical Field
The invention relates to the field of magnetic storage, in particular to a magnetic storage unit and a memory.
Background
A spin-orbit torque (SOT) magnetic memory cell is a magnetic memory cell that uses spin current generated in heavy metals, such as Pt, W, Ta, etc., to push a free layer in a perpendicular anisotropic tunnel junction unit to turn over to realize information storage, and is also a core structure of a next generation magnetic random access memory, as shown in fig. 1. In the structure, the magnetic moment of the free layer is perpendicular to the surface of the film, so that the magnetic moment of the free layer is pushed to turn in the perpendicular direction by spin current generated by spin orbit torque to realize the storage of information '0' and '1', and the magnetic moment of the free layer is required to deviate from the perpendicular direction when writing is carried out. The method for solving the problem commonly used at present is to introduce a transverse auxiliary magnetic field into a magnetic field or a permanent magnetic field generated by a lead current at one side close to a free layer so as to pull a magnetic moment of the vertically oriented free layer away from the vertical direction by a certain angle during information writing and achieve the purpose of driving the free layer to turn over by SOT self-current. However, due to the addition of the transverse auxiliary magnetic field, the design of the memory cell is complex, and the energy consumption of the whole memory cell is also improved, which is not favorable for the development trend of low energy consumption, small size and high density of devices. The present invention therefore addresses this need.
Therefore, a need exists for a magnetic memory cell and memory.
Disclosure of Invention
An aspect of the present invention is to provide a magnetic memory cell having a simple structure and capable of driving a free layer inversion in a perpendicular anisotropic tunnel junction cell with low power consumption to realize a function of information storage.
Another aspect of the present invention also provides a logic device implemented using the spin-orbit torque magnetic memory.
According to an exemplary embodiment, there is provided a magnetic memory cell comprising: the magnetic tunnel junction comprises a free layer, a tunneling layer, a fixed layer and a protective layer which are stacked in sequence, magnetic moments in the free layer and the fixed layer have vertical anisotropy, and the protective layer has a top electrode when the information of the magnetic storage unit is read; the spin current introducing layer is contacted with a free layer of the magnetic tunnel junction and is used for accessing a control current when information is written and also has a bottom electrode when the information of the magnetic storage unit is read; the substrate is used for generating a residual strain which enables the direction of the magnetic moment of the free layer to change under the action of pulse voltage; and electrodes including upper and lower electrodes on opposite sides of the substrate for applying a pulse voltage.
In some examples, the electrodes on the substrate apply a pulsed voltage to introduce residual strain that does not require voltage maintenance, and the electrodes on the substrate apply a pulse of opposite polarity to the previously pulsed voltage to remove the residual strain.
In some examples, the material of the substrate is an asymmetric residual strain piezoelectric material.
In some examples, the asymmetrically residual strained piezoelectric material is formed by doping the piezoelectric strained material with Mn2+And (4) ion acquisition.
In some examples, the piezoelectric strain material includes, but is not limited to, one or more of PMN-PT, PZN-PT, and PZT.
In some examples, the pulsed voltage is greater than a coercive electric field of the substrate and less than a saturation electric field of the substrate.
In some examples, the spin-flow inducing layer material includes, but is not limited to, one or more of Ta, W, Pt, and Ta, W, P, and rare earth alloys.
In some examples, materials of the free layer in the magnetic tunnel junction include, without limitation, CoFeB, materials of the tunneling layer include, without limitation, MgO, materials of the pinned layer include, without limitation, CoFeB \ Co/Pt ] n, and materials of the capping layer include, without limitation, Ta.
In some examples, the information is written by switching in the control current after the pulse voltage action is completed.
According to another exemplary embodiment, a memory is provided, the memory comprising a magnetic memory cell according to any one of claims 1 to 9.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention can realize that the pulse voltage controls the substrate to generate residual strain, the residual strain introduces a magneto-elastic coupling field in the horizontal direction of the free layer through the inverse magneto-electric coupling effect, the magneto-elastic coupling field is utilized to lead the magnetic moment vertical to the free layer to deviate from the vertical direction and deviate from the horizontal direction by a certain angle, and the self-spin current generated by the self-spin current introduction layer is utilized to realize the overturning of the magnetic moment of the free layer; then, after the magnetic moment of the free layer is turned over according to the requirement of information writing, another regulating pulse voltage is applied to remove the previous residual strain, so that the turned magnetic moment of the free layer is still perpendicular to the direction of the free layer, and the stability of information storage is ensured.
(2) The method obtains the residual strain according to the positive and negative of the pulse voltage, and the strain is maintained without voltage in the process of overturning the magnetic moment of the free layer, so that the method is an ultra-low power consumption adjusting mode.
(3) The voltage pulse for regulating and controlling the strain and the spin current for the magnetic moment overturning of the free layer are not applied at the same time, so that the risk of mutual response when the voltage pulse is applied at the same time is avoided, and the design difficulty of the back end circuit is simplified to a certain extent.
Additional features of the present application will be set forth in part in the description which follows. Additional features of some aspects of the present application will be apparent to those of ordinary skill in the art in view of the following description and accompanying drawings, or in view of the production or operation of the embodiments. The features of the present disclosure may be realized and attained by practice or use of the methodologies, instrumentalities and combinations of the various aspects of the specific embodiments described below.
Drawings
Certain features of various embodiments of the invention are set forth with particularity in the appended claims. A better understanding of the features and advantages of the present invention will be obtained by reference to the following detailed description that sets forth illustrative embodiments, in which the principles of the invention are utilized, and the accompanying drawings of which:
FIG. 1 is a schematic diagram of a prior art magnetic memory cell.
FIG. 2 is a schematic diagram of a magnetic memory cell shown in accordance with some embodiments of the present description.
FIG. 3 is a schematic diagram of a magnetic memory cell shown in some embodiments herein writing information "0".
FIG. 4 is a schematic diagram of a magnetic memory cell shown in some embodiments herein writing information "1".
FIG. 5 is a strain plot of an asymmetric residual strain piezoelectric material.
Detailed Description
Exemplary embodiments of the present invention are described below with reference to the accompanying drawings.
FIG. 2 illustrates a schematic diagram of a magnetic memory sheet according to an exemplary embodiment of the present invention. As shown in fig. 2, the magnetic memory sheet includes: the magnetic tunnel junction comprises a free layer, a tunneling layer, a fixed layer and a protective layer which are stacked in sequence, magnetic moments in the free layer and the fixed layer have vertical anisotropy, and the protective layer has a top electrode when the information of the magnetic storage unit is read; the spin current introducing layer is contacted with a free layer of the magnetic tunnel junction and is used for accessing a control current when information is written and also has a bottom electrode when the information of the magnetic storage unit is read; the substrate is used for generating a residual strain which enables the direction of the magnetic moment of the free layer to change under the action of pulse voltage; and electrodes including upper and lower electrodes on opposite sides of the substrate for applying a pulse voltage.
In the embodiment, to implement the writing of the information "0" and "1", the following steps need to be adopted:
(1) write "0": applying a voltage pulse in one direction (the positive and negative of the pulse and the action time depend on the specific performance of the substrate material) on the substrate to generate residual strain, introducing a magnetoelastic coupling field in the horizontal direction of the free layer through a reverse magnetoelectric coupling effect, deviating the magnetic moment vertical to the film surface from the vertical direction by using the magnetoelastic coupling field to a certain angle in the horizontal direction, after the voltage pulse is acted, applying a current in the negative direction to the spin current introduction layer to generate spin current in the direction shown in figure 3 to push the magnetic moment of the free layer of the magnetic storage unit to be overturned from the positive vertical direction to the negative vertical direction, and after the free layer is overturned, applying a voltage pulse in the other direction on the substrate to remove the residual strain on the substrate to form the magnetic moment of the free layer and the fixed layer to be parallel, and recording information of '0', wherein the magnetic moment of the storage unit is oriented in each action stage as.
(2) Writing a '1': applying a voltage pulse in one direction on the substrate, introducing a magneto-elastic coupling field in the horizontal direction of the free layer by the residual strain through a counter magneto-electric coupling effect, deviating the magnetic moment perpendicular to the film surface from the vertical direction by the magneto-elastic coupling field to a certain angle in the horizontal direction, applying a current in the positive direction to the spin current introduction layer after the voltage pulse is acted, generating a spin current in the direction shown in figure 4 to push the magnetic moment of the free layer of the magnetic storage unit to turn from the negative vertical direction to the positive vertical direction, applying a voltage pulse in the other direction on the substrate after the free layer is turned, removing the residual strain on the substrate, forming the antiparallel magnetic moment between the free layer and the fixed layer, and recording information '1', wherein the orientation of the magnetic moment of the storage unit in each action stage is shown in figure 4.
Wherein, after the voltage pulse of one polarity, the substrate should present residual strain in the no-voltage field state, and after the voltage pulse of the other polarity, the substrate should present no residual strain or only little residual strain (less than 10% of the obtained residual strain) in the no-voltage field state, and the protective layer is used for protecting the whole magnetic tunnel junction from being oxidized stably.
In some embodiments, the electrodes on the substrate apply a pulsed voltage to induce residual strain that does not require voltage maintenance, and the electrodes on the substrate apply a pulse of opposite polarity to the previously pulsed voltage to remove the residual strain.
In some embodiments, the asymmetrically residual strained piezoelectric material is fabricated by doping the piezoelectric strained material with Mn2+And (4) ion acquisition.
In some embodiments, the piezoelectric strain material includes, but is not limited to, one or more of PMN-PT, PZN-PT, and PZT.
In some embodiments, the pulsed voltage is greater than a coercive electric field of the substrate and less than a saturation electric field of the substrate.
In some embodiments, the spin-flow inducing layer material includes, but is not limited to, Ta, W, Pt and one or more of Ta, W, P and rare earth alloys.
In some embodiments, the material of the free layer in the magnetic tunnel junction includes, without limitation, CoFeB, the material of the tunneling layer includes, without limitation, MgO, the material of the pinned layer includes, without limitation, CoFeB \ Co/Pt ] n, and the material of the capping layer includes, without limitation, Ta.
In some embodiments, the pulse voltage is applied and then the control current is switched on to write information.
The specific embodiment is as follows: selecting Mn2+Ion-doped PMN-PT piezoelectric material with asymmetric residual strain as baseThe strain curve of the base material is shown in FIG. 5. Applying a positive voltage pulse to the piezoelectric material, and after the pulse is removed, generating residual strain on the substrate (as shown by a point A on figure 5); when the piezoelectric material is applied with a negative voltage pulse, after the negative voltage pulse is removed, the strain state of the substrate returns to the initial state, and the original residual strain is removed without strain (as shown in point B on fig. 5). Cr (15nm)/Au (300nm) is deposited on the proper positions of the upper surface and the lower surface of the substrate by adopting a vacuum coating process and is used as an upper electrode and a lower electrode for applying voltage to the piezoelectric substrate. Then adopting a thin film deposition process to sequentially deposit Pt (3nm)/CoFeB (1.2nm)/MgO (1.5nm)/CoFeB (1.5nm)/Ta (1nm)/[ Co (1nm)/Pt (0.6nm) on the upper surface of the substrate]5/Ru(0.6nm/[Pt(0.6nm)/Co(1nm)]5/Ta (30nm) spin current inducing layer/magnetic tunnel junction, wherein Pt (3nm) is the spin current inducing layer, CoFeB (1.2nm) is the free layer, MgO (1.5nm) is the tunneling layer, CoFeB (1.5nm)/Ta (1nm)/[ Co (1nm)/Pt (0.6nm)]5/Ru(0.6nm/[Pt(0.6nm)/Co(1nm)]5 is a fixed layer, and Ta (30nm) is a protective layer and also has the function of a tunnel junction top electrode. After the plating is finished, the writing process of the information "0" and "1" in the unit is realized as follows:
(1) write "0": applying a positive voltage pulse of 5kV/cm and 10 mus to the piezoelectric material with asymmetric residual strain as substrate, generating a strain along the substrate surface after the positive voltage pulse is completed, making the magnetic moment of the free layer deviate from the original vertical direction, and then applying a current in negative direction along the spin current introduction layer Pt, wherein the current density is 8 x 107A/cm2At the moment, the magnetic moment of the free layer is overturned from the positive vertical direction to the negative vertical direction under the action of the spin current generated by the spin current introducing layer, after the overturning of the free layer is finished, negative voltage pulse of-5 kV/cm and 10 mus is applied to the piezoelectric material with asymmetric residual strain to remove the residual strain on the piezoelectric substrate, and at the moment, the magnetic moment of the free layer is parallel to that of the fixed layer, and information of 0 is recorded;
(2) writing a '1': applying a positive voltage pulse of 5kV/cm and 10 mus to the piezoelectric material with asymmetric residual strain as substrate, generating a strain along the substrate surface after the positive voltage pulse is completed, making the magnetic moment of the free layer deviate from the initial vertical direction, and introducing the layer Pt along the spin current in the positive directionCurrent of current density 8X 107A/cm2, turning the magnetic moment of the free layer of the memory unit from negative vertical direction to positive vertical direction under the action of spin current, applying negative voltage pulse of-5 kV/cm and 10 mus to the piezoelectric material with asymmetric residual strain after the free layer is turned, removing the residual strain on the piezoelectric substrate, and recording information of '1' when the magnetic moments of the free layer and the fixed layer are antiparallel.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (10)
1. A magnetic memory cell, comprising:
the magnetic tunnel junction comprises a free layer, a tunneling layer, a fixed layer and a protective layer which are stacked in sequence, magnetic moments in the free layer and the fixed layer have vertical anisotropy, and the protective layer also has a top electrode when the information of the magnetic storage unit is read out;
the free layer of the magnetic tunnel junction is contacted with the spin current lead-in layer, is used for accessing control current when information is written, and also has a bottom electrode when the information of the magnetic storage unit is read;
the substrate is used for generating a residual strain which enables the direction of the magnetic moment of the free layer to change under the action of pulse voltage; and
electrodes including upper and lower electrodes on opposite sides of the substrate for applying a pulse voltage.
2. A magnetic memory cell according to claim 1 wherein the electrodes on the substrate apply a pulsed voltage to induce residual strain that does not require voltage sustaining, and the electrodes on the substrate apply a pulse of opposite polarity to the previously pulsed voltage to remove residual strain.
3. A magnetic memory cell according to claim 1, wherein the substrate material is an asymmetric residual strain piezoelectric material.
4. A magnetic memory cell according to claim 3, wherein said asymmetrically residual strained piezoelectric material is obtained by doping said piezoelectric strained material with Mn2+And (4) ion acquisition.
5. A magnetic memory cell as claimed in claim 4, wherein the piezoelectric strain material includes, but is not limited to, one or more of PMN-PT, PZN-PT and PZT.
6. A magnetic memory cell according to claim 1, wherein said pulsed voltage is greater than the coercive electric field of said substrate and less than the saturation electric field of said substrate.
7. A magnetic memory cell as claimed in claim 1 wherein the spin current inducing layer is of a material including but not limited to Ta, W, Pt and one or more of Ta, W, Pt and rare earth alloys.
8. The magnetic memory cell of claim 1 wherein the material of the free layer in the magnetic tunnel junction includes, but is not limited to, CoFeB, the material of the tunneling layer includes, but is not limited to, MgO, the material of the pinned layer includes, but is not limited to, CoFeB \ Co/Pt n, and the material of the capping layer includes, but is not limited to, Ta.
9. A magnetic memory cell according to claim 1, wherein said pulse voltage is applied to a control current to write information.
10. A memory, characterized in that it comprises a magnetic memory cell according to any one of claims 1-9.
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| CN202110229528.6A CN113013324A (en) | 2021-03-02 | 2021-03-02 | Magnetic storage unit and memory |
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