CN106328807A - Electrically writable magnetic read magneto-electricity storage unit and manufacturing method - Google Patents
Electrically writable magnetic read magneto-electricity storage unit and manufacturing method Download PDFInfo
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- CN106328807A CN106328807A CN201610978547.8A CN201610978547A CN106328807A CN 106328807 A CN106328807 A CN 106328807A CN 201610978547 A CN201610978547 A CN 201610978547A CN 106328807 A CN106328807 A CN 106328807A
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- H—ELECTRICITY
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Abstract
The invention discloses an electrically writable magnetic read magneto-electricity storage unit, a manufacturing method and relates to the technical field of function materials and information and aims at solving the problem that a magneto-electricity storage unit in the prior art needs the piezomagnetic effect of an externally added bias magnetic field excited magnetostrictive material and accordingly the volume of the storage unit is increased, the signal-to-noise ratio is reduced and the storage density is reduced. The storage unit comprises a bottom electrode layer formed on a substrate chip, a piezoelectric layer formed on the bottom electrode layer, a free layer formed on the piezoelectric layer, a non-magnetic isolation layer formed on the free layer, a fixed layer formed on the non-magnetic isolation layer and a top electrode layer formed on the fixed layer, wherein the free layer, the non-magnetic isolation layer and the fixed layer form a magnetic tunnel junction, the piezoelectric layer and the magnetic tunnel junction form a magneto-electricity heterostructure, the top electrode layer and the bottom electrode layer respectively serve as an upper electrode and a lower electrode of the magneto-electricity heterostructure to exert an electric field on the magneto-electricity heterostructure, and the electric field direction is perpendicular to the magneto-electricity heterostructure.
Description
Technical field
The present invention relates to functional material and areas of information technology, more particularly relate to a kind of autotelegraph magnetic and read magnetoelectricity memory element
And preparation method.
Background technology
In recent years, along with magnetoelectricity compound many ferrum heterogeneous structure material is at magnetic field sensing, ambient vibration energy acquisition, microwave
The aspects such as mode of resonance device and phase shifter are the most constantly explored and study, and progressively start to be applied to low-power consumption and highdensity
Area information storage.
Magnetoelectricity heterojunction structure mainly relies on the extra electric field magnetic to magnetic susceptible material for high density data storage field
Property carry out regulation and control realize, its interlayer strain regulatory mechanism be the lamellar composite by piezoelectric and giant magnetostrictive material, and profit
Electricity is completed by the strain transfer of interface interlayer by the Villari effect of the inverse piezoelectric effect of piezoelectric Yu magnetostriction materials
The field regulation and control to magnetic, this modulation scheme can at room temperature operate and have comparatively ideal modification scope, but, due to magnetic
Cause the flexible result being to occur under material internal magnetic domain outside magnetic field effect upset, if at ferromagnetic/ferroelectricity class many iron layer composite wood
Realizing regulation and control in material must have applied bias magnetic field could fully excite the piezomagnetism of magnetostriction materials as auxiliary, but,
The outside extra bias magnetic field applied not only increases the volume of device and will cause signal to noise ratio degradation, limits stress
The High Density Integration of coupled mode magnetoelectricity memory device.
In sum, magnetoelectricity memory element of the prior art, exist and need applied bias magnetic excitation magnetostriction material
The piezomagnetism of material, causes memory element volume to increase, and signal to noise ratio reduces, and the problem that memory density reduces.
Summary of the invention
The embodiment of the present invention provides a kind of autotelegraph magnetic to read magnetoelectricity memory element and preparation method, in order to solve in prior art
There is the magnetoelectricity memory element piezomagnetism by applied bias magnetic excitation magnetostriction materials, make memory element volume increase
Adding, signal to noise ratio reduces, and the problem that memory density reduces.
The embodiment of the present invention provides a kind of autotelegraph magnetic to read magnetoelectricity memory element, including: substrate base, bottom electrode layer, piezoelectricity
Layer, free layer, non-magnetic sealing coat, fixed layer and top electrode layer；
Described bottom electrode layer is formed on described substrate base；Described piezoelectric layer is formed on described bottom electrode layer；
Described free layer is formed on described piezoelectric layer；Described non-magnetic sealing coat is formed on described free layer；Described fixed layer
It is formed on described non-magnetic sealing coat；Described top electrode layer is formed on described fixed layer；
Described free layer, described non-magnetic sealing coat and described fixed layer constitute magnetic tunnel-junction；Described piezoelectric layer and described magnetic
Tunnel knot constitutes magnetoelectricity heterojunction structure；
Described top electrode layer and described bottom electrode layer respectively as described magnetoelectricity heterojunction structure upper/lower electrode and to described
Magnetoelectricity heterojunction structure applies electric field, and described direction of an electric field is perpendicular to described magnetoelectricity heterojunction structure；
Described piezoelectric layer uses piezoelectric single crystal material；Described free layer and described fixed layer all use magnetostriction material
Material.
It is preferred that the thickness of described piezoelectric layer is 200nm.
It is preferred that described piezoelectric single crystal material is PMN-PT.
It is preferred that described magnetostriction materials are TbFe2。
It is preferred that described bottom electrode layer is anelectrode, described top electrode layer is negative electrode.
The embodiment of the present invention provides a kind of autotelegraph magnetic to read the preparation method of magnetoelectricity memory element, including:
At the Si/SiO that thickness is 500 μm2Mo thick for 5nm is sputtered as bottom electrode layer thin film on substrate base；
Epoxide-resin glue is used to bind monocrystalline piezoelectric material on described bottom electrode layer thin film as piezoelectric layer thin film；
Described piezoelectric layer thin film sputters magnetostriction materials thick for 2.4nm as free layer thin film；
Described free layer thin film sputters MgO thick for 10nm as non-magnetic isolated layer film；
Described non-magnetic isolated layer film sputters magnetostriction materials as fixed layer thin film；
Described fixed layer thin film sputters Ta thick for 5nm as top electrode layer thin film.
In the embodiment of the present invention, it is provided that a kind of autotelegraph magnetic reads magnetoelectricity memory element and preparation method, uses and has obvious magnetic
The magnetostriction materials of stagnant and remanent magnetism constitute magnetic tunnel-junction with non-magnetic material, owing to magnetostriction materials have bigger each to different
Property field existence, utilize the mode of extra electric field realize in magnetic tunnel-junction anisotropy fields inside upset regulation and control, break away from
Tradition magnetoelectricity memory element needs applied bias magnetic field to carry out the constraint of auxiliary electric control magnetic, thus reduces memory element body
Long-pending, improve signal to noise ratio, and improve memory density.
Accompanying drawing explanation
A kind of autotelegraph magnetic that Fig. 1 provides for the embodiment of the present invention reads magnetoelectricity memory element cross-sectional view；
A kind of autotelegraph magnetic that Fig. 2 provides for the embodiment of the present invention reads magnetoelectricity memory element Faraday effect under electric field excitation
Instrumentation plan；
It is heterogeneous that Fig. 3 reads magnetoelectricity memory element magnetoelectricity under electric field excitation for a kind of autotelegraph magnetic that the embodiment of the present invention provides
Structure electro-mechanical-magnetic conversion non-contact testing system principle schematic diagram；
Description of reference numerals:
101-substrate base, 102-bottom electrode layer, 103-piezoelectric layer, 104-free layer, 105-non-magnetic sealing coat, 106-is solid
Given layer, 107-top electrode layer, 201-lock-in amplifier, 202-sample, 203-laser sensing head, 204-vialog control station,
205-PC machine.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
A kind of autotelegraph magnetic that Fig. 1 provides for the embodiment of the present invention reads magnetoelectricity memory element cross-sectional view.Such as Fig. 1 institute
Showing, a kind of autotelegraph magnetic that the embodiment of the present invention provides reads magnetoelectricity memory element, including: substrate base 101, bottom electrode layer 102, pressure
Electric layer 103, free layer 104, non-magnetic sealing coat 105, fixed layer 106 and top electrode layer 107.
Specifically, bottom electrode layer 102 is formed on substrate base 101；Piezoelectric layer 103 be formed at bottom electrode layer 102 it
On；Free layer 104 is formed on piezoelectric layer 103；Non-magnetic sealing coat 105 is formed on free layer 104；Fixed layer 106 shape
Become on non-magnetic sealing coat 105；Top electrode layer 107 is formed on fixed layer 106.
It should be noted that substrate base 101 uses piezoelectric layer 103 to use piezoelectric single crystal material PMN-PT, and press
The thickness of electric layer 103 is 200nm.
It should be noted that be in the relaxation type of quasi-homotype phase boundary (Morphotropic Phase Boundary, MPB)
Ferroelectric single crystal PMN-PT [xPb (Mg1/3Nb2/3)O3-(1-x)PbTiO3] not only there is high tension electricity coefficient, high electromechanical coupling factor
With features such as low coercive fields, and there is abundant ferroelectric phase and domain structure, it is possible to produce bigger in magnetoelectric composite structure
Inverse piezoelectric effect, therefore, choose PMN-PT as Piezoelectric Substrates.
It is preferred that free layer 104 and fixed layer 106 all use magnetostriction materials TbFe2, and free layer 104 is with solid
Given layer 106 is referred to as ferromagnetic layer.
It should be noted that the selection of ferromagnetic material then considers at room temperature to have bigger saturation magnetostriction constant and relatively
Big remanent magnetism and the terres rares giant magnetostrictive material TbFe of magnetic hysteresis2, for providing internal anisotropy field and sensing piezoelectric layer
Reversal of magnetism is concurrently given birth in the strain of transmission.
It should be noted that magnetostriction be ferromagnetic material (magnetic material) due to the change of magnetized state, its size exists
All directions change.Material has the phenomenon expanded with heat and contract with cold as everybody knows.In addition to heat, magnetic field and electric field also result in object
Elongating or shortening of size.Under ferromagnetic material outside magnetic field effect, its size elongation (or shortening), after removing external magnetic field, its
Recovering again the original length, this phenomenon is referred to as magneto-striction phenomenon (or effect).
It should be noted that owing to spinning polarized electron was had by MgO material as the insulative barriers layer of magnetic tunnel-junction
The effect of filter, and this material has higher heat stability, therefore considers these selecting factors MgO as in magnetic tunnel-junction
Non-magnetosphere.
It should be noted that the magnetic tunnel-junction grown is shielded by top electrode layer 107, and. it is a kind of conduction
Material, plays electric action, it is simple to draw the impedance variation of traverse survey magnetic tunnel-junction.
It should be noted that free layer 104, non-magnetic sealing coat 105 and fixed layer 106 constitute magnetic tunnel-junction；Piezoelectric layer 103
Magnetoelectricity heterojunction structure is constituted with magnetic tunnel-junction.
A kind of autotelegraph magnetic that Fig. 2 provides for the embodiment of the present invention reads magnetoelectricity memory element Faraday effect under electric field excitation
Instrumentation plan.As in figure 2 it is shown, this memory element be followed successively by from top to bottom bottom electrode layer 102, piezoelectric layer 103, magnetic tunnel-junction and
Top electrode layer 107.
It should be noted that top electrode layer 107 and bottom electrode layer 102 respectively as magnetoelectricity heterojunction structure upper/lower electrode and
Magnetoelectricity heterojunction structure is applied electric field, and direction of an electric field is perpendicular to magnetoelectricity heterojunction structure；It is preferred that bottom electrode layer 102 is anelectrode,
Top electrode layer 107 is negative electrode.
Specifically, the inverse piezoelectric response produced under electric field action according to PMN-PT, when applying electric field in [011] direction,
Sample will shrink in [001] direction, and protrudes upward in [011] side, the most anisotropic TbFe2Ferromagnetic thin film exists
[001] produce hard axis on direction, and on [111] direction, produce easy magnetizing axis, therefore, contrastingly in the two direction
Carry out the research of electric field regulation and control anisotropy field.
It should be noted that in order to study the electric field direct regulation and control to anisotropy fields inside, auxiliary without externally-applied magnetic field
In the case of helping, within one week, (it is decreased to-30kV/cm from+30kV/cm, the most again by-30kV/ with the step-scan electric field of 2kV/cm
Cm increases to+30kV/cm), respectively the magnetic response of [001] and [011] both direction is measured.For above-mentioned
[100] and on [011] direction electric field regulation and control behavior, by PMN-PT polarised direction [011] direction apply electric field time face in
The anisotropy of strain, the Faraday effect under utilization electric field in situ is made further to measure with quantitative analysis to deepen regulation and control
Mechanism microcosmic understand.In situ under electric field faraday's effect measurement schematic diagram as in figure 2 it is shown, definition TbFe2Near Mo electricity
Side, pole is positive pole, and the plane that the line polarized light that NanoMOKE produces is perpendicular to [011] direction is incident, by rotating excitation field
Mode and calibrated wrench method carry out the anisotropy field upset situation in the lower easy/hard direction of electric field regulation and control and the change of micro-domain state
Change.
It is heterogeneous that Fig. 3 reads magnetoelectricity memory element magnetoelectricity under electric field excitation for a kind of autotelegraph magnetic that the embodiment of the present invention provides
Structure electro-mechanical-magnetic conversion non-contact testing system principle schematic diagram.As it is shown on figure 3, owing to electro-mechanical-magnetic transformation process is by pressing
The Electricity and machine conversion of electric material and the machine of ferromagnetic material-magnetic conversion are coupled to form, thus this research is divided into two steps, purpose
It is that piezoelectricity and the instantaneous operating conditions of magnetostriction sensitive material are learnt in monitoring.
(1) reflective membrane is affixed on the side of piezoelectric single crystal PMN-PT of sample 202, laser sensing head 203 injection
Laser beam is autofocusing on the reflective membrane of vibration plane to be measured.For encouraging the signal of piezoelectric monocrystal by lock-in amplifier 201
Internal signal sources produces, and the A channel of lock-in amplifier 201 captures laser sensing head 203 at certain by vialog control station 204
End face vibration velocity signal under encouraging under frequency also exports in the form of a voltage to PC 205, the instrument voltage-speed arranged
Degree conversion factor (unit: mm/s/V) obtains vibration velocity v.Stretchable sheet is calculated under given frequency f according to formula v=2 π f λ
Length travel λ.
(2) inverse magneto-electric coupled, then by laser sensing head owing to being carried out by the transmission of strain between PMN-PT and TbFe2
The reflectance coating of 203 magnetostrictive layers being vertically incident upon sample 202, obtains the micrometric displacement vibration signal of magnetostrictive layer.Meanwhile, will
The close surface being wound on transducer of copper paint envelope curve produces for detecting induction electromotive force, thus completes the monitoring to machine-magnetic conversion.
End face vibration velocity, end face vibration displacement and interlayer energy can be obtained by the duty of each layer in monitoring magnetoelectricity heterojunction structure
Some Important Parameters such as amount transmission efficiency, significant to the magnetoelectricity heterojunction structure coupled based on strain transfer.
A kind of autotelegraph magnetic that the embodiment of the present invention provides reads the spin of magnetic tunnel-junction under electric field regulates and controls of magnetoelectricity memory element
Electron transport properties is as follows:
Magnetoelectricity Heterogeneous Composite structure Si/SiO2/Mo/PMN-PT/TbFe2/MgO/TbFe2/ Ta has bigger automatically controlled magnetic
Effect, and be capable of carrying out information write without the Magnetic moment reversal of externally-applied magnetic field auxiliary.
Owing to being compounded with ferromagnetic layer/non-magnetosphere/ferromagnetic stratotype magnetic tunnel-junction in heterojunction structure, free layer can be at the work of electric field
Use lower reversal of magnetism, thus magneto-resistor is adjusted and has been changed by monitoring magneto-resistor the reading of information.
It should be noted that the magnetized state of free layer TbFe2 is controlled by adding to outward PMN-PT direction of an electric field, when to depositing
When storage unit applies positive electric field, the direction of magnetization of two ferromagnetic layers is in parallel model, the most spinning electrons in a ferromagnetic layer
Will move to the empty state of another ferromagnetic layer majority spin band.Similarly, minority spinning electron also enters into separately from a magnetosphere
The empty state of one magnetosphere minority spin band, is at this moment recorded for reduction corresponding to low resistance state " 0 " information；When to memory element
When applying negative electric field, the direction of magnetization of two ferromagnetic layers is in antiparallel pattern, at this moment most spinning electron bands in a magnetosphere
Spin and the Spin-Parallel of another ferromagnetic layer minority spinning electron band, thus tunneling process becomes most spins of a magnetosphere
The electronics of electronic band certainly will find the empty state of minority spin in another magnetosphere, is at this moment used for reducing institute corresponding to high-impedance state
Record " 1 " information.
It should be noted that this device is that concept based on closed magnetic circuit proposes from another perspective, electric field is adjusted
Under control, this structure has two stable magnetic states, and wherein during low resistance state, the magnetization orientation of two ferromagnetic layer anisotropy fields makes it have
There is Net magnetic moment, and during high-impedance state, present antiferromagnetic orientation, form the closed magnetic circuit without outer magnetic moment.
It should be noted that the eddy-current loss of the change of the resistance of magnetic tunnel-junction and ferromagnetic material is inversely proportional to, and at electrode
The contact resistance caused in preparation process and line resistance are also inevitable, thus measure resistance and set for device
Count significant.We use four probe method to complete the measurement of magneto-resistor, draw successively by Ag conducting resinl at sample
1,2,3,4 four electrode points, is passed through electricity in order to eliminate contact resistance on extraction electrode point to measuring the impact produced between Isosorbide-5-Nitrae
Stream, 2, measures voltage between 3.Constant-current source used when wherein measuring is Keithley 6221 type, for measure voltage is
SR 7280 lock-in amplifier.
It should be noted that the realization of information " electronically written " is to change free layer by the voltage being added on PMN-PT
The direction of magnetization；So-called " magnetic reading ", is the height measuring its resistance by the way of direct growth magnetic tunnel-junction on PMN-PT
Thus realize the reading of information.Selected giant magnetostrictive thin film layer is free layer, chooses the ferromagnetic material that coercivity differs greatly
As fixed layer, under the effect of electric field, first realize the upset of giant magnetostrictive material internal anisotropy field, so that
Two ferromagnetic layer opposite magnetization states are getted over to ferromagnetism from anti-ferromagnetism, and the magnetized state of fixed layer can be by adjacent inverse ferric magnetosphere
Unidirectional anisotropy institute's pinning that exchange-coupling interaction causes and be difficult to change direction.Thus the magnetization of fixed layer and free layer takes
Change between Parallel and antiparallel state, present low resistance and high-resistance state respectively.
The embodiment of the present invention provides a kind of autotelegraph magnetic to read the preparation method of magnetoelectricity memory element, including:
(1) use molecular pump by the sputtering chamber vacuum state of magnetic-controlled sputtering coating equipment；
(2) at room temperature, magnetic-controlled sputtering coating equipment is used to prepare memory element by sputtering mode on substrate base
Plural layers.
Specifically, described magnetic-controlled sputtering coating equipment is used to prepare memory element by sputtering mode on substrate base
Plural layers, including:
At the Si/SiO that thickness is 500 μm2Mo thick for 5nm is sputtered as bottom electrode layer thin film on substrate base；Use ring
Epoxy resins glue binds PMN-PT piezoelectric monocrystal sheet as piezoelectric layer thin film on bottom electrode layer；Sputtering 2.4nm is thick over the piezoelectric layer
TbFe2As free layer thin film；Free layer sputters MgO thick for 10nm as non-magnetic isolated layer film；At non-Magnetic isolation
Layer sputtering TbFe2As fixed layer thin film；Fixed layer sputters Ta thick for 5nm as top electrode layer thin film.
It should be noted that at the Si/SiO that thickness is 500 μm2Mo thick for 5nm is sputtered as hearth electrode on substrate base
Layer film, including:
Use 600L/s molecular pump that the sputtering chamber air pressure of magnetic-controlled sputtering coating equipment is evacuated to 10-4Pa；It is filled with to sputtering chamber
Ar gas, the air pressure making sputtering chamber is 0.5Pa；Si/SiO in described sputtering chamber2The Mo conduct of 10min is sputtered on substrate base
Pre-sputtering hearth electrode thin film；Being filled with Ar gas to sputtering chamber, the Ar gas controlling to enter sputtering chamber by flow control meter is
35sccsm；Pre-sputtering hearth electrode thin film sputters Mo thick for 5nm as hearth electrode thin film.
It should be noted that the many targets of JZCK450-3C type that magnetic-controlled sputtering coating equipment uses Shenyang Ju Zhi company to produce are true
Empty rf magnetron sputtering equipment, substrate and the target used in experiment include Si/SiO2Substrate, PMN-PT base wafer,
99.99%MgO target, 99.99%TbFe2Target, 99.99%Mo target and 99.99%Ta target.
It should be noted that it is critical only that in the preparation of magnetic tunnel-junction and can prepare high-quality uniform insulation potential barrier
Layer, insulating barrier the thickest (more than 10nm) cannot realize the tunnel of spinning electron and may cause spin reversely, causing magneto-resistor to be imitated
Should weaken；Easily there is the defect such as pin hole, noncontinuity in insulating barrier the thinnest (less than 5nm), thus causes the multiply-connected of ferromagnetic interlayer
Logical or short-circuit, also result in the disappearance of magneto-resistance effect, therefore, ferromagnetic layer sputters the MgO of 10nm as insulative barriers layer.
Finally, in order to protect grown TbFe2, the Ta of one layer of 5nm of sputtering is as also serving as upper electrode while protective layer.At magnetic control
During sample is prepared in sputtering, system temperature maintains essentially in room temperature and can guarantee that the reliability of sample composition.
It should be noted that in terms of the sign of material, measuring of ferroelectric hysteresis loop uses Radiant company of the U.S. to produce
Premier II Ferroelectric material analyzer.The generally strain of monocrystalline piezoelectric material presents buttferfly-type with the change of applied electric field
Hysteresis loop, and this strain is typically at about 450ppm, thus characterizing of piezoelectricity uses the method for optics to measure.In pressure
Electricity monocrystalline vibration end face on stick reflectance coating (Reflective Tape), after by Germany Polytec company produce OFV-
505/5000 type laser vibration measurer, vertically penetrates the He-Ne laser beam that wavelength is 633nm that laser sensing head produces at reflectance coating
Upper acquisition micrometric displacement voltage signal.Bruker D8Advance type X that the crystal orientation of piezoelectric monocrystal and quality produce with Germany
X ray diffraction analysis x instrument characterizes.Magnetoelectricity heterofilm structural interface situation and growth quality use the JSM-that Japan produces
2100 (UHR) type high resolution transmission electron microscope (HRTEM) characterizes.Durham company of Britain is used to produce
NanoMOKE3 type hypersensitivity Kerr magnetooptical effect is measured system and is completed thin magnetic film magnetic property and magnetic domain micro structure
Characterize.
In sum, a kind of autotelegraph magnetic that the embodiment of the present invention provides reads magnetoelectricity memory element and preparation method, uses tool
The magnetostriction materials having obvious magnetic hysteresis and remanent magnetism constitute magnetic tunnel-junction with non-magnetic material, owing to magnetostriction materials have bigger
The existence of anisotropy field, utilize the mode of extra electric field to realize the upset of anisotropy fields inside in magnetic tunnel-junction and adjust
Control, has broken away from the constraint that traditional magnetoelectricity memory element needs applied bias magnetic field to carry out auxiliary electric control magnetic, thus has reduced and deposit
Storage unit volume, improves signal to noise ratio, and improves memory density.
The several specific embodiments being only the present invention disclosed above, the present invention can be carried out by those skilled in the art
Various changes and modification without departing from the spirit and scope of the present invention, if the present invention these amendment and modification belong to the present invention
Within the scope of claim and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (6)
1. an autotelegraph magnetic reads magnetoelectricity memory element, it is characterised in that including: substrate base, bottom electrode layer, piezoelectric layer, freedom
Layer, non-magnetic sealing coat, fixed layer and top electrode layer；
Described bottom electrode layer is formed on described substrate base；Described piezoelectric layer is formed on described bottom electrode layer；Described
Free layer is formed on described piezoelectric layer；Described non-magnetic sealing coat is formed on described free layer；Described fixed layer is formed
On described non-magnetic sealing coat；Described top electrode layer is formed on described fixed layer；
Described free layer, described non-magnetic sealing coat and described fixed layer constitute magnetic tunnel-junction；Described piezoelectric layer and described magnetic channel
Knot constitutes magnetoelectricity heterojunction structure；
Described top electrode layer and described bottom electrode layer respectively as described magnetoelectricity heterojunction structure upper/lower electrode and to described magnetoelectricity
Heterojunction structure applies electric field, and described direction of an electric field is perpendicular to described magnetoelectricity heterojunction structure；
Described piezoelectric layer uses piezoelectric single crystal material；Described free layer and described fixed layer all use magnetostriction materials.
2. memory element as claimed in claim 1, it is characterised in that the thickness of described piezoelectric layer is 200nm.
3. memory element as claimed in claim 1 or 2, it is characterised in that described piezoelectric single crystal material is PMN-PT.
4. memory element as claimed in claim 1, it is characterised in that described magnetostriction materials are TbFe2。
5. memory element as claimed in claim 1, it is characterised in that described bottom electrode layer is anelectrode, described top electrode layer
For negative electrode.
6. the preparation method of the memory element described in a claim 1, it is characterised in that including:
At the Si/SiO that thickness is 500 μm2Mo thick for 5nm is sputtered as bottom electrode layer thin film on substrate base；
Epoxide-resin glue is used to bind monocrystalline piezoelectric material on described bottom electrode layer thin film as piezoelectric layer thin film；
Described piezoelectric layer thin film sputters magnetostriction materials thick for 2.4nm as free layer thin film；
Described free layer thin film sputters MgO thick for 10nm as non-magnetic isolated layer film；
Described non-magnetic isolated layer film sputters magnetostriction materials as fixed layer thin film；
Described fixed layer thin film sputters Ta thick for 5nm as top electrode layer thin film.
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| CN109994599A (en) * | 2017-12-29 | 2019-07-09 | 中国科学院半导体研究所 | Piezoelectric type magnetic RAM and preparation method thereof |
| CN110880039A (en) * | 2019-11-19 | 2020-03-13 | 上海交通大学 | Method for controlling movement of Macarana zero-energy mode by electric field |
| CN111244268A (en) * | 2020-01-15 | 2020-06-05 | 电子科技大学 | Method for implementing voltage-controlled tri-state magnetic memory cell |
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| CN107703465A (en) * | 2017-09-19 | 2018-02-16 | 中国科学院上海硅酸盐研究所 | Magnetic sensor |
| CN109994599A (en) * | 2017-12-29 | 2019-07-09 | 中国科学院半导体研究所 | Piezoelectric type magnetic RAM and preparation method thereof |
| CN109669149A (en) * | 2019-02-01 | 2019-04-23 | 电子科技大学 | A kind of linear anisotropic magnetic resistance sensor and its implementation |
| CN109904307A (en) * | 2019-02-01 | 2019-06-18 | 电子科技大学 | A kind of voltage-controlled storage unit and its implementation based on anisotropic magnetoresistance |
| CN110880039A (en) * | 2019-11-19 | 2020-03-13 | 上海交通大学 | Method for controlling movement of Macarana zero-energy mode by electric field |
| CN111244268A (en) * | 2020-01-15 | 2020-06-05 | 电子科技大学 | Method for implementing voltage-controlled tri-state magnetic memory cell |
| CN111244268B (en) * | 2020-01-15 | 2022-07-26 | 电子科技大学 | Method for implementing voltage-controlled tri-state magnetic memory cell |
| CN111312890A (en) * | 2020-03-31 | 2020-06-19 | 西安交通大学 | Method for realizing magnetic domain overturning by adopting piezoelectric shearing mode |
| CN112993149A (en) * | 2021-02-06 | 2021-06-18 | 浙江驰拓科技有限公司 | Storage unit |
| US20230240080A1 (en) * | 2022-01-25 | 2023-07-27 | Eagle Technology, Llc | Multiferroic memory with piezoelectric layers and related methods |
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