CN102074329A - Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof - Google Patents
Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof Download PDFInfo
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- CN102074329A CN102074329A CN2009102382438A CN200910238243A CN102074329A CN 102074329 A CN102074329 A CN 102074329A CN 2009102382438 A CN2009102382438 A CN 2009102382438A CN 200910238243 A CN200910238243 A CN 200910238243A CN 102074329 A CN102074329 A CN 102074329A
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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Abstract
The invention discloses a magnetic multilayer film as well as a magnetic logic element and a magnetic random access memory thereof. The magnetic multilayer film disclosed by the invention comprises a first antiferromagnetic layer, a first hard magnetic layer, a first non-magnetic metal layer, a second soft magnetic layer, a tunnel barrier layer, a third soft magnetic layer, a second non-magnetic metal layer, a fourth hard magnetic layer and a second antiferromagnetic layer from bottom to top, wherein the third magnetic layer is set to be have a first critical current capable of turning over the magnetization direction of the third magnetic layer and the second magnetic layer is set to be have a second critical current capable of turning over the magnetization direction of the second magnetic layer, and the first critical current is not equal to the second critical current. The magnetic logic element and the magnetic random access memory based on the magnetic multilayer film disclosed by the invention have the advantages of higher read-write speed, relatively small current density required by read-write operation and low consumed power, and energy saving.
Description
Technical field
The invention belongs to magnetic logic field and magnetic random access field of storage, relate in particular to a kind of magnetoresistance effect and magnetic logic elements thereof and magnetic RAM.
Background technology
From phase late 1980s, giant magnetoresistance effect (Giant Magneto Resistance, GMR) observe in the magnetoresistance effect system by people such as Baibich first since, the research of magnetoresistance effect system is a problem of scientific research personnel's common concern always.After this, nineteen ninety-five Japan scientist T.Miyazaki and U.S. scientist J.S.Moodera have observed under the room temperature 18% and 10% tunnel magneto resistance (Tunneling Magneto Resistance respectively in MTJ (MTJ), TMR) ratio, thus uncovered research prelude to MTJ.Find on the basis in the correlative study that continues, the researcher is based on GMR effect and MTJ and designed a kind of novel magnetic random access memory (Magnetic Random Access Memory, MRAM) device model, this device has very outstanding new features, such as radioresistance, non-volatile information storage etc.The magnetized state of memory cell is controlled in the magnetic field that but typical MRAM arrangement works mode mainly depends on word line and bit line current to be produced, and its structure and manufacturing process are very complicated, gives the processing of device and has integratedly brought great inconvenience.
1996, U.S. scientist J.Slonczewski has foretold a kind of new physical mechanism-spin transfer torque (Spin Transfer Torque theoretically, STT) effect, this physical mechanism can utilize electric current self to realize controlling the memory cell magnetized state, when the electric current that flows through in the memory cell during less than certain specific critical value IC, the memory cell magnetized state can not be stored the electric current that flows through in the unit and change; And when the electric current that flows through in the memory cell during greater than this critical value IC, the memory cell magnetized state will be determined by the sense of current that flows through in the memory cell.In the more than ten years subsequently, scientists has been carried out a large amount of extensive and deep researchs to this new effect, and has developed the MRAM based on the STT effect on this theoretical foundation, and Here it is has latest generation STT-MRAM at present now.
It is that core constitutes that existing STT-MRAM adopts with magnetosphere/nonmagnetic layer/magnetosphere, and wherein can be divided into based on the GMR structure according to the different materials of nonmagnetic layer is the STT-TMRMRAM of principle in conjunction with the STT effect in conjunction with the STT-GMR MRAM of STT effect principle or with the TMR structure.But there is the defective that operating current density is big, signal to noise ratio is lower in they.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of magnetoresistance effect and magnetic logic elements and magnetic RAM, thereby overcome the defective that operating current density is big, signal to noise ratio is lower that exists in the above-mentioned prior art based on spin transfer torque (STT) effect.
The objective of the invention is to realize by following scheme:
According to an aspect of the present invention, provide a kind of magnetoresistance effect, described magnetoresistance effect comprises from bottom to up:
First inverse ferric magnetosphere;
First hard magnetic layer;
First non-magnetic metal layer;
Second soft magnetosphere;
Tunnel barrier layer;
The 3rd soft magnetosphere;
Second non-magnetic metal layer;
The 4th hard magnetic layer; With
Second inverse ferric magnetosphere;
Wherein, described the 3rd magnetosphere is set to have first critical current that makes the upset of its direction of magnetization and described second magnetosphere and is set to and has second critical current that makes its direction of magnetization upset, and described first critical current is not equal to described second critical current.
In technique scheme, described first hard magnetic layer, first non-magnetic metal layer and second soft magnetosphere constitute the GMR structure; Described second soft magnetosphere, tunnel barrier layer and the 3rd soft magnetosphere constitute the TMR structure; Described the 3rd soft magnetosphere, second non-magnetic metal layer and the 4th hard magnetic layer constitute the GMR structure.
In technique scheme, set described first hard magnetic layer second soft magnetosphere, the 4th hard magnetic layer are artificial coupling to the 3rd soft magnetosphere.Described artificial coupling comprises artificial weak antiferromagnetic coupling, artificial weak ferromagnetic coupling and do not have coupling.
In technique scheme, described magnetoresistance effect also comprises the intermediate magnetic intercalation, and it is arranged between described second soft magnetosphere and the tunnel barrier layer, and between described the 3rd soft magnetosphere and the tunnel barrier layer.Described intermediate magnetic intercalation is CoFeB, CoFe, and NiFe, this magnetic intercalation thickness is 0.3～5.0nm.
According to another aspect of the present invention, provide a kind of magnetic logic elements that comprises above-mentioned magnetoresistance effect.Wherein, it is opposite with the direction of magnetization of the 4th hard magnetic layer that described first hard magnetic layer is set, and described first critical current is less than described second critical current.
According to a further aspect of the invention, provide a kind of magnetic random access memory cells that comprises above-mentioned magnetoresistance effect.Wherein, it is opposite with the direction of magnetization of the 4th hard magnetic layer that described first hard magnetic layer is set, and described first critical current is less than described second critical current.
According to a further aspect of the invention, provide a kind of magnetic RAM, wherein, described magnetic RAM comprises above-mentioned magnetic random access memory cells.
Compared with prior art, the invention has the advantages that:
1, can realize the control of logic state by the size that only changes unidirectional current, and read or write speed is faster;
2, signal to noise ratio is higher, and the required current density of read-write operation is less relatively, and power drain is low, energy savings;
Description of drawings
Below embodiments of the present invention is described in detail by accompanying drawing, wherein:
Fig. 1 is the schematic diagram of the magnetoresistance effect of logitron according to an embodiment of the invention;
Fig. 2 has illustrated the magnetized state of the magnetoresistance effect of magnetic logic elements according to an embodiment of the invention;
Fig. 3 is the working mode figure of the magnetoresistance effect of magnetic logic elements according to an embodiment of the invention;
Fig. 4 a has illustrated to finish according to an embodiment of the invention the pairing input state of each step, magnetized state and the resistance states of a resistance loop;
Fig. 4 b has illustrated the graph of a relation of resistance R and input current I according to an embodiment of the invention;
Fig. 5 a, Fig. 5 b and Fig. 5 c are the logic state schematic diagram of magnetic logic elements according to an embodiment of the invention;
Fig. 6 is the schematic diagram according to the magnetoresistance effect with middle intercalation of the embodiment of the invention;
Fig. 7 shows a plurality of direction of magnetizations that the magnetoresistance effect according to the embodiment of the invention has;
Fig. 8 is that the cross section according to the embodiment of the invention is the schematic diagram of the magnetoresistance effect of elliptical ring;
Fig. 9 has illustrated the magnetized state of the magnetoresistance effect of magnetic logic elements in accordance with another embodiment of the present invention;
Figure 10 a has illustrated to finish in accordance with another embodiment of the present invention the pairing input state of each step, magnetized state and the resistance states of a resistance loop;
Figure 10 b has illustrated the graph of a relation of resistance R and input current I in accordance with another embodiment of the present invention;
Figure 11 has illustrated according to the present invention the magnetized state of the magnetoresistance effect of the magnetic logic elements of another embodiment;
Figure 12 a has illustrated according to the present invention the pairing input state of each step, magnetized state and the resistance states of finishing a resistance loop of another embodiment;
Figure 12 b has illustrated the resistance R of another embodiment and the graph of a relation of input current I according to the present invention;
Figure 13 has illustrated according to the present invention the magnetized state of the magnetoresistance effect of the magnetic logic elements of another embodiment;
Figure 14 has illustrated the resistance R of another embodiment and the graph of a relation of input current I according to the present invention;
Figure 15 is the schematic diagram of magnetic random access memory cells array according to an embodiment of the invention.
Embodiment
According to one embodiment of present invention, provide the magnetoresistance effect of logitron as shown in Figure 1, this magnetoresistance effect comprises from bottom to up: the first inverse ferric magnetosphere AFM1 of bottom; Be formed at the first magnetosphere FM1 (hard magnetic layer) on the described AFM1; Be formed at the first non-magnetic metal layer NM1 on the described FM1 magnetosphere; Be formed at the second magnetosphere FM2 (soft magnetosphere) on described first non-magnetic metal layer; Be formed at the tunnel barrier layer I1 on described second magnetosphere; Be formed at the 3rd magnetosphere FM3 (soft magnetosphere) on described first tunnel barrier layer; Be formed at the second non-magnetic metal layer NM2 on described the 3rd magnetosphere; Be formed at the 4th magnetosphere FM4 (hard magnetic layer) on described second non-magnetic metal layer; Be formed at the second inverse ferric magnetosphere AFM2 on described the 4th magnetosphere.Wherein, magnetosphere FM1 and FM4 are made of bigger " hard magnetic layer " CoFe of coercive force, magnetosphere FM2 and FM3 are made of less " soft ferromagnetic layer " NiFe of coercive force, the thickness of each ferromagnetic layer can be identical also can be inequality, its thickness is preferable between 5 and 20 nanometers, and better is between 2 and 5 nanometers; Tunnel barrier layer I1 then is the Al of 1.0nm by thickness
2O
3Or MgO constitutes; Non-magnetic metal layer NM1 and NM2 are made of Cu or Ru." soft magnetosphere FM3/ tunnel barrier layer I1/ soft magnetosphere FM2 (abbreviating FM3/I1/FM2 as) " in above-mentioned magnetic multilayer film structure is the TMR structure, " the hard magnetic layer FM4/ second non-magnetic metal layer NM2/ soft magnetosphere FM3 " and " the hard magnetic layer FM1/ first non-magnetic metal layer NM1/ soft magnetosphere FM2 " constitutes the GMR structure, and wherein the resistance value of TMR structure is the main resistance value of element.
The magnetized state that above-mentioned magnetoresistance effect is set as shown in Figure 2, wherein pinned hard magnetic layer FM4 is opposite with the direction of magnetization of pinned hard magnetic layer FM1, FM3 under drive current than the upset earlier of FM2 layer.In this and other embodiment of the present invention, set maximum current density by above-mentioned magnetoresistance effect less than high critical current densities J
C3, pinned like this magnetosphere FM1 and FM4 magnetized state in operation can not overturn, and the magnetized state of FM2 and FM3 only just changes under corresponding conditions.When the direction of magnetization of FM2 and FM3 is a high resistance state when being reverse, this moment, logic was output as " 1 ", and when the two is a low resistance state in the same way the time, logic is output as " 0 ".
Fig. 3 is the working mode figure of the magnetoresistance effect of magnetic logic elements according to an embodiment of the invention.As shown in Figure 3, this magnetic logic elements comprises input signal cable (for example A, B, C, A ', B ' and C ') and output signal line (for example OUT and OUT '), utilize the combination of input signal, each magnetospheric direction of magnetization in the decision magnetoresistance effect, the size of magneto-resistance effect that will be by magnetoresistance effect is as output signal.Of the present invention this all is arranged on incoming line A, B, C on the pinned magnetosphere FM4 with other embodiment, arrow indication route is represented to feed forward current I (+) by input signal cable A, B, the electric current from top to down passes this magnetic multilayer film structure, and the output signal line OUT ' from the lower end flows out then; Incoming line A ', B ', C ' feed electric current and are direction from bottom to top, are defined as negative current I (-); Flow out from holding wire OUT.The step that the initial condition of present embodiment and present embodiment are finished a resistance loop is as follows:
(1) all logical forward current of initial condition: A, B, C, total current is greater than the second critical value I
C2
(2) electric current reduces: have only A, B to lead to forward current, total current is greater than the first critical value I
C1And less than the second critical value I
C2
(3) electric current continues to reduce: have only A to lead to forward current, total current is less than the first critical value I
C1
(4) electric current is reduced to all illogical forward current of 0:A, B, C, and total current is 0;
(5) electric current continues to reduce promptly to begin the electric current increase of negative direction: have only A ' to lead to the negative direction electric current;
(6) electric current of negative direction continues to increase: have only A ', B ' to lead to the negative direction electric current;
(7) electric current of negative direction continues to increase: all logical negative direction electric current of A ', B ', C ';
(8) the negative direction electric current reduces: A ', B ' lead to the negative direction electric current;
(9) the negative direction electric current reduces: A ' leads to the negative direction electric current;
(10) electric current is 0:A, B, C, and A ', B ', C ' all do not have galvanization;
(11) electric current increases, the logical positive direction electric current of beginning positive direction: A;
(12) electric current continues to increase: A, B lead to the positive direction electric current;
(13) electric current continues to increase: all logical positive direction electric current of A, B, C;
Fig. 4 a has illustrated the pairing input state of above-mentioned each step, magnetized state and resistance states.Resistance R and input current I graph of a relation are shown in Fig. 4 b, wherein:
In Fig. 4 a, difference is very little between two resistance of corresponding input state 6 and input state 12 respectively, and is also not exclusively equal between two resistance of corresponding input state 5 and input state 10.Its reason is, structural two resistances of GMR that constitute at GMR structure and the hard magnetic layer FM1 and soft magnetosphere FM2 of hard magnetic layer FM4 and soft magnetosphere FM3 formation are not identical, but both differences are compared with the TMR value of system summary structure, it does not affect 5%, so this difference is to the not influence of realization of logic state.
Below the above-mentioned step of finishing a resistance loop is elaborated: after the initial condition of input current is set, if when having only an incoming line that the positive direction input current is arranged (this moment total current I＜first critical current I
C1), the magnetized state of magnetoresistance effect does not change; When two incoming lines have identical positive direction input current (this moment the first critical current I
C1＜total current I＜second critical current the I
C2), the soft magnetosphere FM3 magnetized state of magnetoresistance effect changes; (this moment second critical current I when three incoming lines have identical positive direction input current
C2＜total current I＜the 3rd critical current I
C3), the soft magnetosphere FM2 magnetized state of magnetoresistance effect also changes, and the direction of magnetization of soft magnetosphere FM2, FM3 is got back to unanimity again like this; When having only an incoming line that the negative direction input current is arranged, the magnetized state of magnetoresistance effect does not change; When two incoming lines had identical negative direction input current, the soft magnetosphere FM2 magnetized state of magnetoresistance effect changed; When three incoming lines had identical negative direction input current, the soft magnetosphere FM3 magnetized state of magnetoresistance effect also changed, and the direction of magnetization of soft magnetosphere FM2, FM3 is got back to unanimity again like this; When two incoming lines had another line of forward input current that the negative sense input current is arranged, this situation had positive direction input current situation consistent with having only an incoming line; When two incoming lines had another line of negative direction input current that the forward input current is arranged, this situation had the negative direction current conditions consistent with having only an incoming line.
Because the present invention is in conjunction with the STT effect, make in the FM3/I1/FM2 structure magnetosphere FM2 different by following two kinds of approach: 1) by regulating the different realizations of FM2 with FM3 thickness with the critical electric current value of FM3 upset; 2), then different with the thickness of NM2 or material is different realizes by adjusting nonmagnetic layer NM1 if FM2 is identical with FM3 thickness.Therefore utilize magnetosphere FM2 different with the critical electric current value of FM3 upset, can be by the size of control input current, the read-write operation that direction is come control logic, concrete mode is as follows: the electric current that is applied in magnetoresistance effect is less than first a specific critical electric current value I
C1(corresponding current density, J
C1=10～10
2A/cm
2, electric current I
C1=current density, J
C1* multilayer film sectional area) time, the magnetized state of its soft magnetosphere or free soft magnetosphere does not change, thereby realizes read operation.Increase the electric current applied subsequently, when the electric current by magnetoresistance effect greater than the first critical current I
C1And less than the second critical current I
C2The time (corresponding current density, J
C2=10
2～10
6A/cm
2, electric current I
C2=current density, J
C2* multilayer film sectional area), its free soft magnetosphere FM3 is owing to the STT effect realizes upset, and free soft magnetosphere FM2 coercive force is bigger than free soft magnetosphere FM3, does not therefore change with this understanding and turns over, and this moment, free soft magnetosphere FM2 was opposite with the magnetized state direction of free soft magnetosphere FM3.When continuing to increase electric current, when electric current surpasses the second critical current I
C2The time, free soft magnetosphere FM2 has realized upset, this moment, free soft magnetosphere FM2 was identical with the magnetized state direction of free soft magnetosphere FM3.If but continue to increase current density, promptly write current would surpass high critical current value I
C3(set I herein
C3＞I
C2＞I
C1), then the magnetized state of the original orientation of the 4th magnetosphere FM4 (also claiming pinned magnetosphere) will be inverted, promptly can cause bit-level (being soft magnetosphere or free soft magnetosphere) thereby be inverted together producing identical magnetization orientation, so write current (being input current) must be less than high critical current value I with pinned magnetosphere
C3
Fig. 5 a, Fig. 5 b and Fig. 5 c are the logic state schematic diagram according to the magnetic logic elements of the magnetoresistance effect based on STT of the present invention.Wherein, Fig. 5 a is that write current was output as " 0 " in logic less than the first critical current state after initial condition was set; Fig. 5 b is greater than first critical current and less than the second critical current state, is output as " 1 " in logic; Fig. 5 c be greater than the second critical current state less than the high critical current densities of device, be output as " 0 " in logic.
As another kind of improved procedure of the present invention, can be between soft magnetosphere FM2 and tunnel barrier layer I1 and soft magnetosphere FM3 and tunnel barrier layer I1, insert intermediate magnetic intercalation U, in order to simplify, soft magnetosphere FM2 and intermediate magnetic intercalation U are represented with " FM2U ", and with soft magnetosphere FM3 and intermediate magnetic intercalation U " FM3U " expression, as shown in Figure 6.In the middle of this magnetic the material of intercalation U be spin polarizability than higher CoFeB, CoFe, NiFe etc., this magnetic intercalation thickness is 0.3～5.0nm.Because this magnetic intercalation U has higher spin polarizability (50%～90%), so to a certain degree decline (10 is arranged based on STT effect upset FM2U and the required critical current of FM3U layer
2～10
4A/cm
2), and the TMR value also is improved to some extent (5%-40%), thus reduce the read-write electric current, improve the density (just can reduce the sectional dimension of multilayer film) of MRAM, improve signal to noise ratio.Because logic state realizes no longer describing in detail here with top similar.
In technique scheme, set magnetosphere FM1, the magnetic moment of FM4 all laterally is parallel to film (shown in the arrow of Fig. 1 left side), yet should be appreciated that for the person of ordinary skill of the art, in other embodiments of the invention, this magnetosphere FM1, the magnetic moment of FM4 can be perpendicular or parallel in face as required, the magnetic moment of FM2, FM3 and FM2U, FM3U is perpendicular to face (shown in the arrow of Fig. 7 left side).Therefore, according to magnetosphere FM1, FM4 and magnetosphere FM2 (or FM2U), the direction of magnetization state of FM3 (or FM3U), stiffness of coupling and STT upset soft magnetosphere FM2, the required different critical current density of soft magnetosphere FM3 can realize logic state by multiple logic input.In technique scheme, it is identical with the direction of magnetization of pinned hard magnetic layer FM1 that pinned hard magnetic layer FM4 can also be set, and can realize the object of the invention equally.In addition, embodiment described above just exemplarily is provided with FM3 than the first upset of FM2, yet in other embodiments of the invention, can also allow FM2 overturn earlier, but notes not considering the situation that both overturn simultaneously.
In addition, for one of ordinary skill in the art will appreciate that, the cross section of above-mentioned multilayer film can also be all elliptical rings as shown in Figure 8, can realize the object of the invention equally.In the present invention this and other embodiment, the size of described elliptical ring can be in following scope: encircling minor axis in oval is 10～100000nm, and minor axis and major axis ratio are 1: 1～5, and oval outer shroud minor axis is 20～200000nm; The size of described ellipse can be in following scope: minor axis is 20～200000nm, and minor axis and major axis ratio are 1: 1～5.Further, can utilize the difference of cross section for the ratio of long axis to short axis of oval structure, cross section is that the ring of elliptical ring structure is thick, the difference of ratio of long axis to short axis realizes operating current density optimization adjusting.Although enumerated the employed material of each rete, thickness in above-mentioned exemplary embodiment, for will be understood by those skilled in the art that, in other embodiments of the invention, each layer can also be selected following material for use:
The available material of described antiferromagnetic layer (AFM1 and AFM2) comprises the alloy material by Ir, Fe, Rh, Pt or Pd and Mn, or antiferromagnetic materials such as CoO, NiO, PtCr, and its thickness is 7nm～20nm.The available material of described magnetosphere (FM1, FM2, FM3, FM4) comprises ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2nm～10nm, but its thickness can be the same or different as required, wherein:
Described ferrimagnet comprises: Fe, Co, 3d transition group magnetic metals such as Ni, Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, ferromagnetic alloies such as Gd-Y, Pr, Nd, Sm, Gd, Tb, Dy, Ho, rare earth metal and ferrimags thereof such as Er, or has an alloy of perpendicular magnetic anisotropic, CoPt alloy for example, the FePt alloy of L10 phase, PtCoNi alloy or Co-Cr are alloy, Co-Cr, Co-Cr-Nb, Co-Cr-TaCo-Cr-Pt, TbFeCo, GdFeCo, Gd-Co, GdFe, TbFe, TbCo/Cr, CoGdZr, CoGdSm, GdTbFeCo or GdTbFe etc.; Multilayer film with perpendicular magnetic anisotropic, preferred Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film, CoCr/Pt multilayer film;
Described semimetal magnetic material comprises: Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Co
2Heussler alloys such as MnSi;
Described magnetic semiconductor material comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix
2, HfO
2Or SnO
2, or GaAs, InAs, GaN or the ZnTe of Mn doping.
Described tunnel barrier layer (I1) is by MgO, Al
2O
3, AlN, Ta
2O
5Or HfO
2Form Deng insulation oxide, its thickness is 0.8nm～3.0nm.
The thickness of described non-magnetic metal layer (NM1 and NM2) is 2nm～10nm, and first non-magnetic metal layer, second non-magnetic metal layer its thickness as required can be the same or different.
As the improved implementation of another kind of the present invention, can pinned hard magnetic layer FM4 be set to the artificial coupling situation of soft magnetosphere FM3 or FM1 hard magnetic layer coupling situation by regulation and control each the tunic thickness parameter of magnetoresistance effect and material character to soft magnetosphere FM2, perhaps the two, thereby as the logic initial condition.Wherein said coupling situation comprises artificial weak antiferromagnetic coupling, artificial weak ferromagnetic coupling, and do not have coupling (utmost point weak coupling) situation.Below will elaborate to various coupling situations.In following embodiment, exemplarily set soft magnetosphere FM3 coercive force greater than soft magnetosphere FM2, promptly soft magnetosphere FM2 based on the required direction of magnetization reset current of STT effect less than soft magnetosphere FM3 based on the required direction of magnetization reset current of STT effect.
Fig. 9 has illustrated the magnetized state of the magnetoresistance effect of magnetic logic elements in accordance with another embodiment of the present invention, and it is opposite with the pinned hard magnetic layer FM1 direction of magnetization that pinned hard magnetic layer FM4 wherein is set.Based on the RKKY effect, owing to changed the thickness of non-magnetic metal layer NM1 and NM2, making between pinned hard magnetic layer FM4 and the soft magnetosphere FM is weak artificial antiferromagnetic coupling, is weak artificial antiferromagnetic coupling between pinned hard magnetic layer FM1 and the soft magnetosphere FM3.In this case, because the STT effect causes the critical electric current value of its upset different, the required critical reset current of soft magnetosphere FM3 layer is I to magnetosphere FM2 with FM3
C1, the required critical reset current of soft ferromagnetic layer FM2 is I
C2, its initial condition is the logic high resistance states that obstructed current conditions forms based on coupling.The step that this embodiment finishes a resistance loop is as follows, and Figure 10 a has illustrated the pairing input state of each step, magnetized state and resistance states in addition.
(1) initial condition: the artificial weak obstructed electric current of antiferromagnetic coupling structure of artificial weak antiferromagnetic coupling structure/barrier layer I1/;
(2) electric current increases: have only A to lead to forward current, total current is less than the first critical value I
C1
(3) electric current continues to increase: have only A, B leads to forward current, and total current is greater than the first critical value I
C1And less than the second critical value I
C2
(4) electric current continues to increase: A, B, C all lead to forward current, and total current is greater than the second critical value I
C2
(5) electric current begins to reduce: have only A, B to lead to the direction electric current;
(6) electric current continues to reduce: have only A to lead to the positive direction electric current;
(7) electric current continues to be decreased to zero: obstructed electric current;
(8) electric current of beginning negative direction increases: have only A ' to lead to the negative direction electric current;
(9) electric current of negative direction continues to increase: have only A ', B ' to lead to the negative direction electric current;
(10) electric current of negative direction continues to increase: all logical negative direction electric current of A ', B ', C ';
(11) electric current of negative direction reduces: A ', B ' lead to the negative direction electric current;
(12) electric current of negative direction reduces: A ' leads to the negative direction electric current;
(13) electric current is 0:A, B, C, and A ', B ', C ' all do not have galvanization.
The relation of resistance R and input current I is shown in Figure 10 b, wherein:
Can find out that by Figure 10 b it can realize unidirectional current input control logic state.
In another embodiment of the present invention, being provided with between magnetosphere FM1 and the magnetosphere FM2 is artificial weak antiferromagnetic coupling, and magnetosphere FM3 is not for there being the free layer of coupling, as shown in figure 11.Equally, pinned hard magnetic layer FM4 is opposite with the pinned hard magnetic layer FM1 direction of magnetization, and FM3 overturns earlier than FM2 layer under drive current.The initial condition of this magnetoresistance effect is for feeding greater than the first critical value I
C1And less than the second critical value I
C2The high resistance state that forms in conjunction with artificial anti-iron coupling under the current conditions.The step that present embodiment is finished a resistance loop is:
(1) initial condition: have only A, B leads to forward current, and total current is greater than the first critical value I
C1And less than the second critical value I
C2
(2) electric current increases: A, B, C all lead to forward current, and total current is greater than the second critical value I
C2
(3) electric current begins to reduce: have only A, B to lead to forward current, total current is greater than the first critical value I
C1And less than the second critical value I
C2
(4) electric current continues to reduce: have only A to lead to square electric current, total current is less than the first critical value I
C1
(5) electric current continues to be decreased to zero: obstructed electric current;
(6) electric current of beginning negative direction increases: have only A ' to lead to the negative direction electric current;
(7) electric current of negative direction continues to increase: have only A ', B ' to lead to the negative direction electric current;
(8) electric current of negative direction continues to increase: all logical negative direction electric current of A ', B ', C ';
(9) electric current of negative direction reduces: A ', B ' lead to the negative direction electric current;
(10) electric current of negative direction reduces: A ' leads to the negative direction electric current;
(11) electric current is 0:A, B, C, and A ', B ', C ' all do not have galvanization;
(12) electric current increases: A leads to the positive direction electric current;
(13) electric current continues to increase: have only A, B leads to forward current, and total current is greater than the first critical value I
C1And less than the second critical value I
C2
Figure 12 a has illustrated the pairing input state of above-mentioned each step, magnetized state and resistance states.The resistance R of this embodiment-input current I concerns shown in Figure 12 b, wherein:
Present embodiment can be by the input state of Control current in this case, thereby resistance states that can control device, promptly be equivalent to control output state, and output state has constituted the realization of logic, and pairing logic input of Different Logic state and logic output are referring to showing 1-1 to showing 1-3.In table 1-1, establishing initial condition is A, all logical forward current of B, operating line A ' wherein, B ': the no input current of regulation 0 expression; 1 expression has negative input current.Functional line C ': the no input current of regulation 0 expression; 1 expression has negative input current.Can realize logic NAND or NOR.Below for realizing the step of logic NAND: with A, the logical forward current of B carries out initialization to the multilayer film magnetic state.C ' line is a functional line, and A ', B ' they are incoming line, in this logic realization process, and the input of set-up function line C ' no current, i.e. functional line input ' 0 '.Work as A ', B ' is all during no current, total current be positioned at 0 and-I
C1Between, promptly import A '=0, B '=0 o'clock, by Figure 12 a and Figure 12 b, we can access this moment Resistance states is high resistance, so be output as 1.Again with A, the logical forward current of B carries out initialization to the multilayer film magnetic state, when A ' galvanization, during the obstructed electric current of B ', promptly imports A '=1, B '=0 o'clock, and total current is positioned at-I
C2With-I
C1Between, this moment, Resistance states was a high resistance, so be output as 1.Again with A, the logical forward current of B carries out initialization to the multilayer film magnetic state, when the obstructed electric current of A ', during B ' galvanization, promptly imports A '=0, B '=1 o'clock, and total current is positioned at-I
C2With-I
C1Between, this moment, Resistance states was a high resistance, so be output as 1.Again with A, the logical forward current of B carries out initialization to the multilayer film magnetic state, when A ' galvanization, during B ' galvanization, promptly imports A '=1, B '=1 o'clock, and total current is positioned at-I
C2With-I
C3Between, this moment, Resistance states was a low resistance, so be output as 0.Above step has realized logic NAND function.See Table lattice 1-1, logic state NAND.In like manner the realization analytical method of other logic states is identical.
Table 1-1
In table 1-2, establish initial condition position A ', all logical negative current of B ', C '.Operating line A, B: the no input current of regulation 0 expression; 1 expression has the forward input current.Functional line C: the no input current of regulation 0 expression; 1 expression has the forward input current.Can realize logic OR.
Table 1-2
Establish initial condition position A among the table 1-3, all logical forward current of B.Operating line A, B: the no input current of regulation 0 expression; 1 expression has input current.Functional line B ', C ': negative input current is arranged.Can realize logic OR.
Table 1-3
According to still another embodiment of the invention, being provided with between magnetosphere FM1 and the magnetosphere FM2 is artificial weak ferromagnetic coupling, and magnetosphere FM3 is not for there being the free layer of coupling, as shown in figure 13.Equally, pinned hard magnetic layer FM4 is opposite with the pinned hard magnetic layer FM1 direction of magnetization, and FM3 overturns earlier than FM2 layer under drive current.Its resistance R-input current I concerns as shown in figure 14.Its resistance loop and top analysis classes are seemingly no longer done detailed description here.
Magnetoresistance effect based on the invention described above, it can be configured to magnetic random access memory cells, Figure 15 is the schematic diagram of magnetic random access memory cells array according to an embodiment of the invention, has determined the access density of MRAM according to the logical unit number of unit are in the array.Now the function of MRAM is realized describing according to Figure 15.As shown in figure 15, M1, M2 ... and Mi, and N1, N2 ... with the Nj line be the incoming line of electric current, wherein i represent row, j represent the row.Each Mi (Nj) can be by three input current lines, and A, B in promptly corresponding the foregoing description, three incoming lines of C (A ', three incoming lines of B ', C ') and sense wire OUT (OUT ') line constitutes.Because MRAM requires and can set every Mi according to the correct control of write current size 0,1 state, is connected with corresponding big or small electric current in the Nj line, if MRAM is operated, so will be to Mi, the Nj line carries out current practice.For example: (Mi Nj) is initially 0 state (low resistance state), is that 1 state (high-impedance state) then promptly is provided with and opens Nj, Mi passage, Nj galvanization I if will change its state in unit among the MRAM
0(I wherein
C1＜I
0＜I
C2) can to finish 0 state-transition be 1 state.This logical circuit still can keep the preceding state that cuts off the power supply after outage, have non-volatile feature.Since this multilayer film based on the STT effect MRAM have the lower operating current that writes and read, the signal to noise ratio that therefore can significantly improve MRAM effectively reduces power consumption simultaneously.
It can be seen from the above, the present invention in conjunction with STT-GMR and both structure constructions of STT-TMR realize little operating current density and the high magnetic composite multi-layer membrane structure of signal to noise ratio based on the STT effect.Further, by equivalent layer interfacial characteristics in intercalation in the middle of introducing or the adjusting multilayer film, as regulating nonmagnetic layer material, parameters such as thickness, utilize the RKKY effect to regulate artificial weak ferromagnetic, weak antiferromagnetic coupling state, realize multiple magnetic logic in conjunction with the operation of input current size.Magnetic multilayer film structure of the present invention has better STT effect, have the corresponding upset of soft magnetosphere preferably and TMR than high s/n ratio, and this structure can realize logical operation to electric current by folk prescription, and each magnetosphere magnetic moment direction compound mode is many, and function realizes that logic state is abundant.
Although the present invention is made specific descriptions with reference to the above embodiments, but for the person of ordinary skill of the art, should be appreciated that and can make amendment or improve based on content disclosed by the invention, and these modifications and improving all within spirit of the present invention and scope.
Claims (11)
1. magnetoresistance effect, described magnetoresistance effect comprises from bottom to up:
First inverse ferric magnetosphere;
First hard magnetic layer;
First non-magnetic metal layer;
Second soft magnetosphere;
Tunnel barrier layer;
The 3rd soft magnetosphere;
Second non-magnetic metal layer;
The 4th hard magnetic layer; With
Second inverse ferric magnetosphere;
Wherein, described the 3rd magnetosphere is set to have first critical current that makes the upset of its direction of magnetization and described second magnetosphere and is set to and has second critical current that makes its direction of magnetization upset, and described first critical current is not equal to described second critical current.
2. magnetoresistance effect according to claim 1 is characterized in that,
Described first hard magnetic layer, first non-magnetic metal layer and second soft magnetosphere constitute the GMR structure;
Described second soft magnetosphere, tunnel barrier layer and the 3rd soft magnetosphere constitute the TMR structure;
Described the 3rd soft magnetosphere, second non-magnetic metal layer and the 4th hard magnetic layer constitute the GMR structure.
3. magnetoresistance effect according to claim 2 is characterized in that, sets described first hard magnetic layer second soft magnetosphere, the 4th hard magnetic layer are artificial coupling to the 3rd soft magnetosphere.
4. magnetoresistance effect according to claim 3 is characterized in that, described artificial coupling comprises artificial weak antiferromagnetic coupling, artificial weak ferromagnetic coupling and do not have coupling.
5. magnetoresistance effect according to claim 2 is characterized in that described magnetoresistance effect also comprises the intermediate magnetic intercalation, and it is arranged between described second soft magnetosphere and the tunnel barrier layer, and between described the 3rd soft magnetosphere and the tunnel barrier layer.
6. magnetoresistance effect according to claim 5 is characterized in that, described intermediate magnetic intercalation is CoFeB, CoFe, and NiFe, this magnetic intercalation thickness is 0.3～5.0nm.
7. magnetic logic elements that comprises arbitrary described magnetoresistance effect in the claim 1 to 6.
8. magnetic logic elements according to claim 7 is characterized in that, it is opposite with the direction of magnetization of the 4th hard magnetic layer that described first hard magnetic layer is set, and described first critical current is less than described second critical current.
9. magnetic random access memory cells that comprises arbitrary described magnetoresistance effect in the claim 1 to 6.
10. magnetic random access memory cells according to claim 9 is characterized in that, it is opposite with the direction of magnetization of the 4th hard magnetic layer that described first hard magnetic layer is set, and described first critical current is less than described second critical current.
11. a magnetic RAM is characterized in that, described magnetic RAM comprises the described magnetic random access memory cells of claim 10.
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