CN102074329B - Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof - Google Patents
Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof Download PDFInfo
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- CN102074329B CN102074329B CN2009102382438A CN200910238243A CN102074329B CN 102074329 B CN102074329 B CN 102074329B CN 2009102382438 A CN2009102382438 A CN 2009102382438A CN 200910238243 A CN200910238243 A CN 200910238243A CN 102074329 B CN102074329 B CN 102074329B
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Abstract
The invention discloses a magnetic multilayer film as well as a magnetic logic element and a magnetic random access memory thereof. The magnetic multilayer film disclosed by the invention comprises a first antiferromagnetic layer, a first hard magnetic layer, a first non-magnetic metal layer, a second soft magnetic layer, a tunnel barrier layer, a third soft magnetic layer, a second non-magnetic metal layer, a fourth hard magnetic layer and a second antiferromagnetic layer from bottom to top, wherein the third magnetic layer is set to be have a first critical current capable of turning over the magnetization direction of the third magnetic layer and the second magnetic layer is set to be have a second critical current capable of turning over the magnetization direction of the second magnetic layer, and the first critical current is not equal to the second critical current. The magnetic logic element and the magnetic random access memory based on the magnetic multilayer film disclosed by the invention have the advantages of higher read-write speed, relatively small current density required by read-write operation and low consumed power, and energy saving.
Description
Technical field
The invention belongs to magnetic logic field and magnetic random access field of storage, relate in particular to a kind of magnetoresistance effect and magnetic logic elements thereof and magnetic RAM.
Background technology
From phase late 1980s; Giant magnetoresistance effect (Giant Magneto Resistance; GMR) observe in the magnetoresistance effect system by people such as Baibich first since, the research of magnetoresistance effect system is a problem of scientific research personnel's common concern always.After this; Nineteen ninety-five Japan scientist T.Miyazaki and U.S. scientist J.S.Moodera have observed under the room temperature 18% and 10% tunnel magneto resistance (Tunneling Magneto Resistance respectively in MTJ (MTJ); TMR) ratio, thus uncovered research prelude to MTJ.Find on the basis in the correlative study that continues; The researcher is based on GMR effect and MTJ and designed a kind of novel magnetic random access memory (Magnetic Random Access Memory; MRAM) device model; This device has very outstanding new features, such as radioresistance, non-volatile information storage etc.The magnetized state of memory cell is controlled in the magnetic field that but typical MRAM arrangement works mode mainly depends on word line and bit line current to be produced, and its structure and manufacturing process be complicacy very, has brought great inconvenience to the processing of device and integrated.
1996; U.S. scientist J.Slonczewski has foretold a kind of new physical mechanism-spin transfer torque (Spin Transfer Torque theoretically; STT) effect; This physical mechanism can utilize electric current self to realize the controlling of memory cell magnetized state, and when the electric current that flows through in the memory cell during less than certain specific critical value IC, the memory cell magnetized state can not be stored the electric current that flows through in the unit and change; And when the electric current that flows through in the memory cell during greater than this critical value IC, the memory cell magnetized state will be determined by the sense of current that flows through in the memory cell.In the more than ten years subsequently, scientists has been carried out a large amount of extensive and deep researchs to this new effect, and on this theoretical foundation, has developed the MRAM based on the STT effect, and Here it is has latest generation STT-MRAM at present now.
It is that core constitutes that existing STT-MRAM adopts with magnetosphere/nonmagnetic layer/magnetosphere, can be divided into according to the different materials of nonmagnetic layer wherein that to combine the STT-GMR MRAM of STT effect principle or combine the STT effect with the TMR structure based on the GMR structure be the STT-TMRMRAM of principle.But there is the defective that operating current density is big, signal to noise ratio is lower in they.
Summary of the invention
Therefore; The object of the present invention is to provide a kind of magnetoresistance effect and magnetic logic elements and magnetic RAM, thereby overcome the defective that operating current density is big, signal to noise ratio is lower that exists in the above-mentioned prior art based on spin transfer torque (STT) effect.
The objective of the invention is to realize through following scheme:
According to an aspect of the present invention, a kind of magnetoresistance effect is provided, said magnetoresistance effect comprises from bottom to up:
First inverse ferric magnetosphere;
First hard magnetic layer;
First non-magnetic metal layer;
Second soft magnetosphere;
Tunnel barrier layer;
The 3rd soft magnetosphere;
Second non-magnetic metal layer;
The 4th hard magnetic layer; With
Second inverse ferric magnetosphere;
Wherein, Said the 3rd magnetosphere is set to have first critical current that makes the upset of its direction of magnetization and said second magnetosphere and is set to and has second critical current that makes its direction of magnetization upset, and said first critical current is not equal to said second critical current.
In technique scheme, said first hard magnetic layer, first non-magnetic metal layer and second soft magnetosphere constitute the GMR structure; Said second soft magnetosphere, tunnel barrier layer and the 3rd soft magnetosphere constitute the TMR structure; Said the 3rd soft magnetosphere, second non-magnetic metal layer and the 4th hard magnetic layer constitute the GMR structure.
In technique scheme, set said first hard magnetic layer second soft magnetosphere, the 4th hard magnetic layer are artificial coupling to the 3rd soft magnetosphere.Said artificial coupling comprises artificial weak antiferromagnetic coupling, artificial weak ferromagnetic coupling and do not have coupling.
In technique scheme, said magnetoresistance effect also comprises the intermediate magnetic intercalation, and it is arranged between said second soft magnetosphere and the tunnel barrier layer, and between said the 3rd soft magnetosphere and the tunnel barrier layer.Said intermediate magnetic intercalation is CoFeB, CoFe, and NiFe, this magnetic intercalation thickness is 0.3～5.0nm.
According to another aspect of the present invention, a kind of magnetic logic elements that comprises above-mentioned magnetoresistance effect is provided.Wherein, the direction of magnetization that said first hard magnetic layer and the 4th hard magnetic layer are set is opposite, and said first critical current is less than said second critical current.
According to a further aspect of the invention, a kind of magnetic random access memory cells that comprises above-mentioned magnetoresistance effect is provided.Wherein, the direction of magnetization that said first hard magnetic layer and the 4th hard magnetic layer are set is opposite, and said first critical current is less than said second critical current.
According to a further aspect of the invention, a kind of magnetic RAM is provided, wherein, said magnetic RAM comprises above-mentioned magnetic random access memory cells.
Compared with prior art, the invention has the advantages that:
1, can realize the control of logic state through the size that only changes unidirectional current, and read or write speed is faster;
2, signal to noise ratio is higher, and the required current density of read-write operation is less relatively, and power drain is low, energy savings;
Description of drawings
Below through accompanying drawing embodiments of the invention are described in detail, wherein:
Fig. 1 is the sketch map of the magnetoresistance effect of logitron according to an embodiment of the invention;
Fig. 2 has illustrated the magnetized state of the magnetoresistance effect of magnetic logic elements according to an embodiment of the invention;
Fig. 3 is the working mode figure of the magnetoresistance effect of magnetic logic elements according to an embodiment of the invention;
Fig. 4 a has illustrated to accomplish according to an embodiment of the invention the pairing input state of each step, magnetized state and the resistance states of a resistance loop;
Fig. 4 b has illustrated the graph of a relation of resistance R and input current I according to an embodiment of the invention;
Fig. 5 a, Fig. 5 b and Fig. 5 c are the logic state sketch map of magnetic logic elements according to an embodiment of the invention;
Fig. 6 is the sketch map according to the magnetoresistance effect with middle intercalation of the embodiment of the invention;
Fig. 7 shows a plurality of direction of magnetizations that the magnetoresistance effect according to the embodiment of the invention has;
Fig. 8 is that the cross section according to the embodiment of the invention is the sketch map of the magnetoresistance effect of elliptical ring;
Fig. 9 has illustrated the magnetized state of the magnetoresistance effect of magnetic logic elements in accordance with another embodiment of the present invention;
Figure 10 a has illustrated to accomplish in accordance with another embodiment of the present invention the pairing input state of each step, magnetized state and the resistance states of a resistance loop;
Figure 10 b has illustrated the graph of a relation of resistance R and input current I in accordance with another embodiment of the present invention;
Figure 11 has illustrated according to the present invention the magnetized state of the magnetoresistance effect of the magnetic logic elements of another embodiment;
Figure 12 a has illustrated according to the present invention the pairing input state of each step, magnetized state and the resistance states of the resistance loop of completion of another embodiment;
Figure 12 b has illustrated the resistance R of another embodiment and the graph of a relation of input current I according to the present invention;
Figure 13 has illustrated according to the present invention the magnetized state of the magnetoresistance effect of the magnetic logic elements of another embodiment;
Figure 14 has illustrated the resistance R of another embodiment and the graph of a relation of input current I according to the present invention;
Figure 15 is the sketch map of magnetic random access memory cells array according to an embodiment of the invention.
Embodiment
According to one embodiment of present invention, the magnetoresistance effect of logitron as shown in Figure 1 is provided, this magnetoresistance effect comprises from bottom to up: the first inverse ferric magnetosphere AFM1 of bottom; Be formed at the first magnetosphere FM1 (hard magnetic layer) on the said AFM1; Be formed at the first non-magnetic metal layer NM1 on the said FM1 magnetosphere; Be formed at the second magnetosphere FM2 (soft magnetosphere) on said first non-magnetic metal layer; Be formed at the tunnel barrier layer I1 on said second magnetosphere; Be formed at the 3rd magnetosphere FM3 (soft magnetosphere) on said first tunnel barrier layer; Be formed at the second non-magnetic metal layer NM2 on said the 3rd magnetosphere; Be formed at the 4th magnetosphere FM4 (hard magnetic layer) on said second non-magnetic metal layer; Be formed at the second inverse ferric magnetosphere AFM2 on said the 4th magnetosphere.Wherein, Magnetosphere FM1 and FM4 are made up of bigger " hard magnetic layer " CoFe of coercive force; Magnetosphere FM2 and FM3 are made up of less " soft ferromagnetic layer " NiFe of coercive force; The thickness of each ferromagnetic layer can be identical also can be inequality, its thickness is preferable between 5 and 20 nanometers, better is between 2 and 5 nanometers; Tunnel barrier layer I1 then is the Al of 1.0nm by thickness
2O
3Or MgO constitutes; Non-magnetic metal layer NM1 and NM2 are made up of Cu or Ru." soft magnetosphere FM3/ tunnel barrier layer I1/ soft magnetosphere FM2 (abbreviating FM3/I1/FM2 as) " in above-mentioned magnetic multilayer film structure is the TMR structure; " the hard magnetic layer FM4/ second non-magnetic metal layer NM2/ soft magnetosphere FM3 " and " the hard magnetic layer FM1/ first non-magnetic metal layer NM1/ soft magnetosphere FM2 " constitutes the GMR structure, and wherein the resistance value of TMR structure is the main resistance value of element.
The magnetized state that above-mentioned magnetoresistance effect is set is as shown in Figure 2, and wherein by pinning hard magnetic layer FM4 and opposite by the direction of magnetization of pinning hard magnetic layer FM1, FM3 overturns earlier than FM2 layer under drive current.Of the present invention this with other embodiment in, set maximum current density through above-mentioned magnetoresistance effect less than high critical current densities J
C3, can not overturn by pinned magnetic FM1 and FM4 magnetized state in operation like this, and the magnetized state of FM2 and FM3 only just changes under corresponding conditions.When the direction of magnetization of FM2 and FM3 is a high resistance state when being reverse, this moment, logic was output as " 1 ", and when the two is a low resistance state in the same way the time, logic is output as " 0 ".
Fig. 3 is the working mode figure of the magnetoresistance effect of magnetic logic elements according to an embodiment of the invention.As shown in Figure 3; This magnetic logic elements comprises input signal cable (for example A, B, C, A ', B ' and C ') and output signal line (for example OUT and OUT '); Utilize the combination of input signal; Each magnetospheric direction of magnetization in the decision magnetoresistance effect, the size of magneto-resistance effect that will be through magnetoresistance effect is as exporting signal.Of the present invention this all is arranged on incoming line A, B, C by on the pinned magnetic FM4 with other embodiment; Arrow indication route is represented to feed forward current I (+) by input signal cable A, B; The electric current from top to down passes this magnetic multilayer film structure, and the output signal line OUT ' from the lower end flows out then; Incoming line A ', B ', C ' feed electric current and are direction from bottom to top, are defined as negative current I (-); Flow out from holding wire OUT.The step that the initial condition of present embodiment and present embodiment are accomplished a resistance loop is following:
(1) all logical forward current of initial condition: A, B, C, total current is greater than the second critical value I
C2
(2) electric current reduces: have only A, the logical forward current of B, total current is greater than the first critical value I
C1And less than the second critical value I
C2
(3) electric current continues to reduce: have only A to lead to forward current, total current is less than the first critical value I
C1
(4) electric current is reduced to all illogical forward current of 0:A, B, C, and total current is 0;
(5) electric current continues to reduce promptly to begin the electric current increase of negative direction: have only A ' to lead to the negative direction electric current;
(6) electric current of negative direction continues to increase: have only A ', the logical negative direction electric current of B ';
(7) electric current of negative direction continues to increase: all logical negative direction electric current of A ', B ', C ';
(8) the negative direction electric current reduces: A ', the logical negative direction electric current of B ';
(9) the negative direction electric current reduces: A ' leads to the negative direction electric current;
(10) electric current is 0:A, B, C, and A ', B ', C ' all do not have galvanization;
(11) electric current increases, the logical positive direction electric current of beginning positive direction: A;
(12) electric current continues to increase: A, the logical positive direction electric current of B;
(13) electric current continues to increase: all logical positive direction electric current of A, B, C;
Fig. 4 a has illustrated the pairing input state of above-mentioned each step, magnetized state and resistance states.Resistance R and input current I graph of a relation are shown in Fig. 4 b, wherein:
In Fig. 4 a, difference is very little between two resistance of corresponding input state 6 and input state 12 respectively, and is also not exclusively equal between two resistance of corresponding input state 5 and input state 10.Its reason is; Structural two resistances of GMR that constitute at GMR structure and the hard magnetic layer FM1 and soft magnetosphere FM2 of hard magnetic layer FM4 and soft magnetosphere FM3 formation are not identical; But both differences are compared with the TMR value of system summary structure; It does not affect 5%, so this difference is to the not influence of realization of logic state.
Below the step of a resistance loop of above-mentioned completion is elaborated: after the initial condition of input current is set, if when having only an incoming line that the positive direction input current is arranged (this moment total current I＜first critical current I
C1), the magnetized state of magnetoresistance effect does not change; When two incoming lines have identical positive direction input current (this moment the first critical current I
C1＜total current I＜second critical current the I
C2), the soft magnetosphere FM3 magnetized state of magnetoresistance effect changes; (this moment second critical current I when three incoming lines have identical positive direction input current
C2＜total current I＜the 3rd critical current I
C3), the soft magnetosphere FM2 magnetized state of magnetoresistance effect also changes, and the direction of magnetization of soft magnetosphere FM2, FM3 is got back to unanimity again like this; When having only an incoming line that the negative direction input current is arranged, the magnetized state of magnetoresistance effect does not change; When two incoming lines had identical negative direction input current, the soft magnetosphere FM2 magnetized state of magnetoresistance effect changed; When three incoming lines had identical negative direction input current, the soft magnetosphere FM3 magnetized state of magnetoresistance effect also changed, and the direction of magnetization of soft magnetosphere FM2, FM3 is got back to unanimity again like this; When two incoming lines had another line of forward input current that the negative sense input current is arranged, this situation had positive direction input current situation consistent with having only an incoming line; When two incoming lines had another line of negative direction input current that the forward input current is arranged, this situation had the negative direction current conditions consistent with having only an incoming line.
Because the present invention combines the STT effect, make in the FM3/I1/FM2 structure magnetosphere FM2 different through following two kinds of approach: 1) to pass through the different realizations of adjusting FM2 with FM3 thickness with the critical electric current value of FM3 upset; 2), then different with the thickness of NM2 or material is different realizes through adjusting nonmagnetic layer NM1 if FM2 is identical with FM3 thickness.Therefore utilize magnetosphere FM2 different with the critical electric current value of FM3 upset; Can be through the size of control input current, the read-write operation that direction is come control logic, concrete mode is following: the electric current that in magnetoresistance effect, is applied is less than first a specific critical electric current value I
C1(corresponding current density, J
C1=10～10
2A/cm
2, electric current I
C1=current density, J
C1* multilayer film sectional area) time, the magnetized state of its soft magnetosphere or free soft magnetosphere does not change, thereby realizes read operation.Increase the electric current applied subsequently, when the electric current through magnetoresistance effect greater than the first critical current I
C1And less than the second critical current I
C2The time (corresponding current density, J
C2=10
2～10
6A/cm
2, electric current I
C2=current density, J
C2* multilayer film sectional area); Its free soft magnetosphere FM3 is owing to the STT effect realizes upset; And free soft magnetosphere FM2 coercive force is bigger than free soft magnetosphere FM3, does not therefore change with this understanding and turns over, and this moment, the magnetized state of free soft magnetosphere FM2 and free soft magnetosphere FM3 was in the opposite direction.When continuing to increase electric current, when electric current surpasses the second critical current I
C2The time, free soft magnetosphere FM2 has realized upset, this moment, free soft magnetosphere FM2 was identical with the magnetized state direction of free soft magnetosphere FM3.If but continue to increase current density, promptly write current would surpass high critical current value I
C3(set I among this paper
C3＞I
C2＞I
C1); Then the magnetized state of the original orientation of the 4th magnetosphere FM4 (also claiming by pinned magnetic) will be inverted; Promptly can cause bit-level (being soft magnetosphere or free soft magnetosphere) thus produce identical magnetization orientation with being inverted together by pinned magnetic, so write current (being input current) must be less than high critical current value I
C3
Fig. 5 a, Fig. 5 b and Fig. 5 c are the logic state sketch map according to the magnetic logic elements of the magnetoresistance effect based on STT of the present invention.Wherein, Fig. 5 a is that write current was output as " 0 " in logic less than the first critical current state after initial condition was set; Fig. 5 b is greater than first critical current and less than the second critical current state, is output as " 1 " in logic; Fig. 5 c be greater than the second critical current state less than the high critical current densities of device, be output as " 0 " in logic.
As another kind of improved procedure of the present invention; Can be between soft magnetosphere FM2 and tunnel barrier layer I1 and soft magnetosphere FM3 and tunnel barrier layer I1; Insert intermediate magnetic intercalation U,, soft magnetosphere FM2 and intermediate magnetic intercalation U are represented with " FM2U " in order to simplify; And with soft magnetosphere FM3 and intermediate magnetic intercalation U usefulness " FM3U " expression, as shown in Figure 6.In the middle of this magnetic the material of intercalation U be spin polarizability than higher CoFeB, CoFe, NiFe etc., this magnetic intercalation thickness is 0.3～5.0nm.Because this magnetic intercalation U has higher spin polarizability (50%～90%), so decline (10 is to a certain degree arranged based on STT effect upset FM2U and the required critical current of FM3U layer
2～10
4A/cm
2), and the TMR value also is improved to some extent (5%-40%), thus reduce the read-write electric current, improve the density (just can reduce the sectional dimension of multilayer film) of MRAM, improve signal to noise ratio.Since logic state realize with above similar, no longer detail here.
In technique scheme; Set magnetosphere FM1, the magnetic moment of FM4 all laterally are parallel to film (shown in the arrow of Fig. 1 left side), yet should be appreciated that for the person of ordinary skill of the art; In other embodiments of the invention; This magnetosphere FM1, the magnetic moment of FM4 can be perpendicular or parallel in face as required, the magnetic moment of FM2, FM3 and FM2U, FM3U is perpendicular to face (shown in the arrow of Fig. 7 left side).Therefore; According to magnetosphere FM1, FM4 and magnetosphere FM2 (or FM2U); The direction of magnetization state of FM3 (or FM3U), stiffness of coupling and STT upset soft magnetosphere FM2, the required different critical current density of soft magnetosphere FM3 can realize logic state through multiple logic input.In technique scheme, can also be provided with by pinning hard magnetic layer FM4 with identical by the direction of magnetization of pinning hard magnetic layer FM1, can realize the object of the invention equally.In addition, the embodiment that more than describes just exemplarily is provided with FM3 than the first upset of FM2, yet in other embodiments of the invention, can also let FM2 overturn earlier, but notes not considering the situation that both overturn simultaneously.
In addition, for one of ordinary skill in the art will appreciate that, the cross section of above-mentioned multilayer film can also be such as elliptical ring shown in Figure 8, can realize the object of the invention equally.The present invention this with other embodiment in, the size of said elliptical ring can be in following scope: encircling minor axis in oval is 10～100000nm, and minor axis and major axis ratio are 1: 1～5, and oval outer shroud minor axis is 20～200000nm; The size of said ellipse can be in following scope: minor axis is 20～200000nm, and minor axis and major axis ratio are 1: 1～5.Further, can utilize the difference of cross section for the ratio of long axis to short axis of oval structure, cross section is that the ring of elliptical ring structure is thick, the difference of ratio of long axis to short axis realizes operating current density optimization adjusting.Although in above-mentioned exemplary embodiment, enumerated the employed material of each rete, thickness, for will be understood by those skilled in the art that, in other embodiments of the invention, each layer can also be selected following material for use:
The available material of said antiferromagnetic layer (AFM1 and AFM2) comprises the alloy material by Ir, Fe, Rh, Pt or Pd and Mn, or antiferromagnetic materials such as CoO, NiO, PtCr, and its thickness is 7nm～20nm.The available material of said magnetosphere (FM1, FM2, FM3, FM4) comprises ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2nm～10nm, but its thickness can be the same or different as required, wherein:
Said ferrimagnet comprises: 3d transition group magnetic metals such as Fe, Co, Ni; Ferromagnetic alloies such as Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, Gd-Y; Rare earth metal and ferrimags thereof such as Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er; Or has an alloy of perpendicular magnetic anisotropic; For example the FePt alloy of CoPt alloy, L10 phase, PtCoNi alloy or Co-Cr are alloy, Co-Cr, Co-Cr-Nb, Co-Cr-TaCo-Cr-Pt, TbFeCo, GdFeCo, Gd-Co, GdFe, TbFe, TbCo/Cr, CoGdZr, CoGdSm, GdTbFeCo or GdTbFe etc.; Multilayer film with perpendicular magnetic anisotropic, preferred Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film, CoCr/Pt multilayer film;
Said semimetal magnetic material comprises: Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Co
2Heussler alloys such as MnSi;
Said magnetic semiconductor material comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix
2, HfO
2Or SnO
2, or GaAs, InAs, GaN or the ZnTe of Mn doping.
Said tunnel barrier layer (I1) is by MgO, Al
2O
3, AlN, Ta
2O
5Or HfO
2Form Deng insulation oxide, its thickness is 0.8nm～3.0nm.
The thickness of said non-magnetic metal layer (NM1 and NM2) is 2nm～10nm, and first non-magnetic metal layer, second non-magnetic metal layer its thickness as required can be the same or different.
As the improved implementation of another kind of the present invention; Can be provided with through each tunic thickness parameter and the material character of regulation and control magnetoresistance effect by pinning hard magnetic layer FM4 the manual work coupling situation of soft magnetosphere FM3 or FM1 hard magnetic layer coupling situation soft magnetosphere FM2; Perhaps the two, thereby as the logic initial condition.Wherein said coupling situation comprises artificial weak antiferromagnetic coupling, artificial weak ferromagnetic coupling, and do not have coupling (utmost point weak coupling) situation.Below will elaborate to various coupling situation.In following embodiment, exemplarily set soft magnetosphere FM3 coercive force greater than soft magnetosphere FM2, promptly soft magnetosphere FM2 based on the required direction of magnetization reset current of STT effect less than soft magnetosphere FM3 based on the required direction of magnetization reset current of STT effect.
Fig. 9 has illustrated wherein to be provided with the magnetized state of the magnetoresistance effect of magnetic logic elements in accordance with another embodiment of the present invention by pinning hard magnetic layer FM4 with opposite by the pinning hard magnetic layer FM1 direction of magnetization.Based on the RKKY effect, owing to changed the thickness of non-magnetic metal layer NM1 and NM2, making is weak artificial antiferromagnetic coupling between pinning hard magnetic layer FM4 and the soft magnetosphere FM, is weak artificial antiferromagnetic coupling between pinning hard magnetic layer FM1 and the soft magnetosphere FM3.In this case, because the STT effect causes the critical electric current value of its upset different, the required critical reset current of soft magnetosphere FM3 layer is I to magnetosphere FM2 with FM3
C1, the required critical reset current of soft ferromagnetic layer FM2 is I
C2, its initial condition is the logic high resistance states that obstructed current conditions forms based on coupling.The step that this embodiment accomplishes a resistance loop is following, and Figure 10 a has illustrated the pairing input state of each step, magnetized state and resistance states in addition.
(1) initial condition: the artificial weak antiferromagnetic coupling structure/weak obstructed electric current of antiferromagnetic coupling structure of barrier layer I1/ manual work;
(2) electric current increases: have only A to lead to forward current, total current is less than the first critical value I
C1
(3) electric current continues to increase: have only A, B leads to forward current, and total current is greater than the first critical value I
C1And less than the second critical value I
C2
(4) electric current continues to increase: A, B, C all lead to forward current, and total current is greater than the second critical value I
C2
(5) electric current begins to reduce: have only A, the logical direction electric current of B;
(6) electric current continues to reduce: have only A to lead to the positive direction electric current;
(7) electric current continues to be decreased to zero: obstructed electric current;
(8) electric current of beginning negative direction increases: have only A ' to lead to the negative direction electric current;
(9) electric current of negative direction continues to increase: have only A ', the logical negative direction electric current of B ';
(10) electric current of negative direction continues to increase: all logical negative direction electric current of A ', B ', C ';
(11) electric current of negative direction reduces: A ', the logical negative direction electric current of B ';
(12) electric current of negative direction reduces: A ' leads to the negative direction electric current;
(13) electric current is 0:A, B, C, and A ', B ', C ' all do not have galvanization.
The relation of resistance R and input current I is shown in Figure 10 b, wherein:
correspondence; (1)-; (7) process
correspondence; (8)-; (13) process
Can find out that by Figure 10 b it can realize unidirectional current input control logic state.
In another embodiment of the present invention, being provided with between magnetosphere FM1 and the magnetosphere FM2 is artificial weak antiferromagnetic coupling, and magnetosphere FM3 is for there not being the free layer of coupling, and is shown in figure 11.Equally, with opposite by the pinning hard magnetic layer FM1 direction of magnetization, FM3 overturns earlier than FM2 layer under drive current by pinning hard magnetic layer FM4.The initial condition of this magnetoresistance effect is for feeding greater than the first critical value I
C1And less than the second critical value I
C2The high resistance state that combines artificial anti-iron coupling under the current conditions and form.The step that present embodiment is accomplished a resistance loop is:
(1) initial condition: have only A, B leads to forward current, and total current is greater than the first critical value I
C1And less than the second critical value I
C2
(2) electric current increases: A, B, C all lead to forward current, and total current is greater than the second critical value I
C2
(3) electric current begins to reduce: have only A, the logical forward current of B, total current is greater than the first critical value I
C1And less than the second critical value I
C2
(4) electric current continues to reduce: have only A to lead to square electric current, total current is less than the first critical value I
C1
(5) electric current continues to be decreased to zero: obstructed electric current;
(6) electric current of beginning negative direction increases: have only A ' to lead to the negative direction electric current;
(7) electric current of negative direction continues to increase: have only A ', the logical negative direction electric current of B ';
(8) electric current of negative direction continues to increase: all logical negative direction electric current of A ', B ', C ';
(9) electric current of negative direction reduces: A ', the logical negative direction electric current of B ';
(10) electric current of negative direction reduces: A ' leads to the negative direction electric current;
(11) electric current is 0:A, B, C, and A ', B ', C ' all do not have galvanization;
(12) electric current increases: A leads to the positive direction electric current;
(13) electric current continues to increase: have only A, B leads to forward current, and total current is greater than the first critical value I
C1And less than the second critical value I
C2
Figure 12 a has illustrated the pairing input state of above-mentioned each step, magnetized state and resistance states.The resistance R of this embodiment-input current I concerns shown in Figure 12 b, wherein:
Present embodiment can be through the input state of Control current in this case; Thereby resistance states that can control device; Promptly be equivalent to control output state; And output state has constituted the realization of logic, and pairing logic input of Different Logic state and logic output are referring to showing 1-1 to showing 1-3.In table 1-1, establishing initial condition is A, all logical forward current of B, operating line A ' wherein, B ': the no input current of regulation 0 expression; 1 expression has negative input current.Functional line C ': the no input current of regulation 0 expression; 1 expression has negative input current.Can realize logic NAND or NOR.Below for realizing the step of logic NAND: with A, the logical forward current of B carries out initialization to the multilayer film magnetic state.C ' line is a functional line, and A ', B ' they are incoming line, in this logic realization process, and the input of set-up function line C ' no current, i.e. functional line input ' 0 '.Work as A ', B ' is all during no current, total current be positioned at 0 with-I
C1Between, promptly import A '=0, B '=0 o'clock, by Figure 12 a and Figure 12 b, we can access this moment Resistance states is high resistance, so be output as 1.Again with A, the logical forward current of B carries out initialization to the multilayer film magnetic state, when A ' galvanization, during the obstructed electric current of B ', promptly imports A '=1, B '=0 o'clock, and total current is positioned at-I
C2With-I
C1Between, this moment, Resistance states was a high resistance, so be output as 1.Again with A, the logical forward current of B carries out initialization to the multilayer film magnetic state, when the obstructed electric current of A ', during B ' galvanization, promptly imports A '=0, B '=1 o'clock, and total current is positioned at-I
C2With-I
C1Between, this moment, Resistance states was a high resistance, so be output as 1.Again with A, the logical forward current of B carries out initialization to the multilayer film magnetic state, when A ' galvanization, during B ' galvanization, promptly imports A '=1, B '=1 o'clock, and total current is positioned at-I
C2With-I
C3Between, this moment, Resistance states was a low resistance, so be output as 0.Above step has realized logic NAND function.See form 1-1, logic state NAND.In like manner the realization analytical method of other logic states is identical.
Table 1-1
In table 1-2, establish initial condition position A ', all logical negative current of B ', C '.Operating line A, B: the no input current of regulation 0 expression; 1 expression has the forward input current.Functional line C: the no input current of regulation 0 expression; 1 expression has the forward input current.Can realize logic OR.
Table 1-2
Establish initial condition position A among the table 1-3, all logical forward current of B.Operating line A, B: the no input current of regulation 0 expression; 1 expression has input current.Functional line B ', C ': negative input current is arranged.Can realize logic OR.
Table 1-3
According to still another embodiment of the invention, being provided with between magnetosphere FM1 and the magnetosphere FM2 is artificial weak ferromagnetic coupling, and magnetosphere FM3 is for there not being the free layer of coupling, and is shown in figure 13.Equally, with opposite by the pinning hard magnetic layer FM1 direction of magnetization, FM3 overturns earlier than FM2 layer under drive current by pinning hard magnetic layer FM4.Its resistance R-input current I relation is shown in figure 14.Its resistance loop and top analysis classes are seemingly no longer done detailed description here.
Magnetoresistance effect based on the invention described above; Can it be configured to magnetic random access memory cells; Figure 15 is the sketch map of magnetic random access memory cells array according to an embodiment of the invention, has determined the access density of MRAM according to the logical unit number of unit are in the array.According to Figure 15 the function of MRAM is realized describing at present.Shown in figure 15, M1, M2 ... And Mi, and N1, N2 ... With the Nj line be the incoming line of electric current, wherein i represent row, j represent the row.Each Mi (Nj) can be by three input current lines, and A in promptly corresponding the foregoing description, B, three incoming lines of C (A ', B ', three incoming lines of C ') and sense wire OUT (OUT ') line constitutes.Because MRAM requires and can set every Mi according to the correct control of write current size 0,1 state, is connected with corresponding big or small electric current in the Nj line, if MRAM is operated, so will be to Mi, the Nj line carries out current practice.For example: (Mi Nj) is initially 0 state (low resistance state), is that 1 state (high-impedance state) then promptly is provided with and opens Nj, Mi passage, Nj galvanization I if will change its state in unit among the MRAM
0(I wherein
C1＜I
0＜I
C2) can to accomplish 0 state-transition be 1 state.This logical circuit still can keep the preceding state that cuts off the power supply after outage, have non-volatile characteristic.Since this multilayer film based on the STT effect MRAM have the lower operating current that writes and read, the signal to noise ratio that therefore can significantly improve MRAM effectively reduces power consumption simultaneously.
It can be seen from the above, and the present invention has combined STT-GMR and both structure constructions of STT-TMR and realized little operating current density and the high magnetic composite multi-layer membrane structure of signal to noise ratio based on the STT effect.Further; Through equivalent layer interfacial characteristics in intercalation in the middle of introducing or the adjusting multilayer film, as regulating nonmagnetic layer material, parameters such as thickness; Utilize the RKKY effect to regulate ferromagnetic, weak antiferromagnetic coupling state a little less than the manual work, combine the input current size to operate and realize multiple magnetic logic.Magnetic multilayer film structure of the present invention has better STT effect; Have soft magnetosphere preferably corresponding upset and TMR than high s/n ratio; And this structure can realize logical operation to electric current through folk prescription, and each magnetosphere magnetic moment direction compound mode is many, and function realizes that logic state is abundant.
Although the present invention is made specific descriptions with reference to the above embodiments; But for the person of ordinary skill of the art; Should be appreciated that and can make amendment or improve based on content disclosed by the invention, and these modifications and improving all within spirit of the present invention and scope.
Claims (10)
1. magnetoresistance effect, said magnetoresistance effect comprises from bottom to up:
First inverse ferric magnetosphere;
First hard magnetic layer;
First non-magnetic metal layer;
First soft magnetosphere;
Tunnel barrier layer;
Second soft magnetosphere;
Second non-magnetic metal layer;
Second hard magnetic layer; With
Second inverse ferric magnetosphere;
Wherein, Said second soft magnetosphere is set to have first critical current that makes the upset of its direction of magnetization and said first soft magnetosphere and is set to and has second critical current that makes its direction of magnetization upset, and said first critical current is not equal to said second critical current; And,
Said first hard magnetic layer, first non-magnetic metal layer and first soft magnetosphere constitute the GMR structure;
Said first soft magnetosphere, tunnel barrier layer and second soft magnetosphere constitute the TMR structure;
Said second soft magnetosphere, second non-magnetic metal layer and second hard magnetic layer constitute the GMR structure.
2. magnetoresistance effect according to claim 1 is characterized in that, sets said first hard magnetic layer first soft magnetosphere, second hard magnetic layer are artificial coupling to second soft magnetosphere.
3. magnetoresistance effect according to claim 2 is characterized in that, said artificial coupling comprises artificial weak antiferromagnetic coupling, artificial weak ferromagnetic coupling and do not have coupling.
4. magnetoresistance effect according to claim 1 is characterized in that said magnetoresistance effect also comprises the intermediate magnetic intercalation, and it is arranged between said first soft magnetosphere and the tunnel barrier layer, and between said second soft magnetosphere and the tunnel barrier layer.
5. magnetoresistance effect according to claim 4 is characterized in that, said intermediate magnetic intercalation is CoFeB, CoFe, and NiFe, this intermediate magnetic intercalation thickness is 0.3～5.0nm.
6. magnetic logic elements that comprises arbitrary described magnetoresistance effect in the claim 1 to 5.
7. magnetic logic elements according to claim 6 is characterized in that, the direction of magnetization that said first hard magnetic layer and second hard magnetic layer are set is opposite, and said first critical current is less than said second critical current.
8. magnetic random access memory cells that comprises arbitrary described magnetoresistance effect in the claim 1 to 5.
9. magnetic random access memory cells according to claim 8 is characterized in that, the direction of magnetization that said first hard magnetic layer and second hard magnetic layer are set is opposite, and said first critical current is less than said second critical current.
10. a magnetic RAM is characterized in that, said magnetic RAM comprises the described magnetic random access memory cells of claim 9.
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| US8796796B2 (en) * | 2012-12-20 | 2014-08-05 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic junctions having improved polarization enhancement and reference layers |
| CN103280234B (en) * | 2013-05-28 | 2016-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Magnetic RAM |
| US9842988B2 (en) | 2015-07-20 | 2017-12-12 | Headway Technologies, Inc. | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications |
| CN105280214B (en) * | 2015-09-10 | 2018-02-27 | 中国科学院物理研究所 | Current drive-type MAGNETIC RANDOM ACCESS MEMORY and spin logical device |
| CN106328807A (en) * | 2016-11-08 | 2017-01-11 | 郑州轻工业学院 | Electrically writable magnetic read magneto-electricity storage unit and manufacturing method |
| CN107846215B (en) * | 2017-10-31 | 2020-07-28 | 华中科技大学 | Reconfigurable logic device based on magnetic sigecum |
| CN111725386B (en) * | 2019-09-23 | 2022-06-10 | 中国科学院上海微系统与信息技术研究所 | Magnetic memory device and manufacturing method thereof, memory and neural network system |
| CN113046709B (en) * | 2021-02-24 | 2022-04-08 | 季华实验室 | Cobalt-based multilayer film and preparation method thereof |
| TWI790839B (en) | 2021-12-02 | 2023-01-21 | 財團法人工業技術研究院 | In-plane magnetized spin-orbit magnetic device |
| CN117388768B (en) * | 2023-11-24 | 2024-06-04 | 珠海多创科技有限公司 | Magneto-resistive element, manufacturing method thereof and magneto-resistive sensor |
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