CN213816191U - Tunnel magnetoresistance and tunnel magnetic device - Google Patents
Tunnel magnetoresistance and tunnel magnetic device Download PDFInfo
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- CN213816191U CN213816191U CN202023230036.9U CN202023230036U CN213816191U CN 213816191 U CN213816191 U CN 213816191U CN 202023230036 U CN202023230036 U CN 202023230036U CN 213816191 U CN213816191 U CN 213816191U
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Abstract
The utility model provides a tunnel magnetism resistance and tunnel magnetism device. The tunneling magnetoresistance includes: a pinning layer; the free layer is arranged opposite to the pinning layer, the free layer is a superparamagnetic layer, and the thickness of the free layer is smaller than or equal to the critical thickness; a tunneling barrier layer between the pinned layer and the free layer; and the bottom layer conductive structure is positioned on one side of the free layer, which faces away from the tunneling barrier layer. The free layer in the tunnel magneto resistor chooses for use the super magnetism layer that thickness is less than or equal to critical thickness, and in magnetization process, the magnetic moment that constitutes super magnetism single domain granule can follow same direction orientation and reach magnetic saturation, and the magnetic susceptibility is higher, consequently, the utility model provides a tunnel magneto resistor has big saturation field and big linearity.
Description
Technical Field
The utility model relates to a magnetic sensor technical field, concretely relates to tunnel magnetism resistance and tunnel magnetic device.
Background
The magnetic sensing technology is widely applied to the fields of new energy, intelligent transportation, industrial control, intelligent household appliances, intelligent networks and the like. Currently, tmr (tunneling Magneto resistance) technology, i.e., tunneling Magneto resistance, is widely popularized.
The mechanism of generation of the tunneling magnetoresistance effect is the spin-dependent tunneling effect, which is mainly applied to mtj (magnetic Tunnel junction) devices, that is, magnetic Tunnel junction devices. The magnetic tunnel junction includes a pinned layer whose magnetization orientation is fixed, a free layer whose magnetization orientation is changeable by a field current, and a tunneling barrier layer between the pinned layer and the free layer, and one electrode is connected to each of the free layer and the pinned layer of the magnetic tunnel junction. The MTJ device has a tunneling magnetoresistance effect, and when the magnetization orientation direction of the free layer is parallel to the magnetization orientation direction of the pinned layer under the action of a magnetic field or current, the tunneling magnetoresistance shows a low resistance state; when the magnetization orientation direction of the free layer and the magnetization of the pinned layer tend to be antiparallel by a magnetic field or a current, the tunneling magnetoresistance exhibits a high resistance state.
But at present, the tunnel magnetoresistance is correspondingly small in saturation field, the absolute value of the saturation field is generally less than 200Gs, and the linearity in the saturation field is relatively poor. And thus limited for some open loop designs or for sensor applications where the saturation field requirements are large.
SUMMERY OF THE UTILITY MODEL
Therefore, the to-be-solved technical problem of the utility model lies in overcoming among the prior art problem that tunnel magnetism resistance saturation field is little, the linearity is poor. Thereby providing a tunneling magneto-resistance and tunneling magnetic device.
The utility model provides a tunnel magnetism resistance, include: a pinning layer; the free layer is arranged opposite to the pinning layer, the free layer is a superparamagnetic layer, and the thickness of the free layer is smaller than or equal to the critical thickness; a tunneling barrier layer between the pinned layer and the free layer.
Optionally, the free layer comprises CoFe40B20Free layer or CoFe60B20A free layer.
Optionally, the thickness of the free layer is 1.0nm to 1.4 nm.
Optionally, the method further includes: the device comprises a top layer conductive structure and a bottom layer conductive structure which are arranged oppositely, wherein a pinning layer, a free layer and a tunneling barrier layer are all positioned between the top layer conductive structure and the bottom layer conductive structure, and the pinning layer is positioned between the top layer conductive structure and the tunneling barrier layer.
Optionally, the bottom layer conductive structure includes a bottom layer conductive body and an interface layer, and the interface layer is located between the bottom layer conductive body and the free layer.
Optionally, the interfacial layer includes a Ta interfacial layer or a Ru interfacial layer.
Optionally, the pinning layer comprises: the free layer structure comprises a first sub pinning film, a second sub pinning film, a third sub pinning film and a fourth sub pinning film, wherein the first sub pinning film, the second sub pinning film, the third sub pinning film and the fourth sub pinning film are sequentially stacked in the direction from the free layer tunneling barrier layer to the free layer of the tunneling barrier layer; the first sub-pinning film comprises CoFe40B20A sub-pinning film; the second sub-pinning film comprises a Ru sub-pinning film; the third sub-pinning film comprises CoFe30A sub-pinning film; the fourth sub-piercing film comprises PtMn62A seed pinning film.
Optionally, the thickness of the first sub-pinning film is 1.4nm to 3 nm; the thickness of the second sub pinning film is 0.7 nm-1.0 nm; the thickness of the third sub pinning film is 1.5 nm-2 nm; the thickness of the fourth sub pinning film is 15 nm-20 nm.
The utility model also provides a tunnel magnetism device, include the utility model discloses a tunnel magnetism resistance.
Optionally, the number of the tunneling magneto-resistors is several, and the tunneling magneto-resistors are connected in series.
The utility model discloses technical scheme has following beneficial effect:
1. the utility model discloses technical scheme provides a tunnel magnetism resistance, free layer in the tunnel magnetism resistance chooses for use thickness to be less than or equal to critical thickness's super magnetism layer in the same direction, and at the magnetization in-process, the magnetic moment of constituteing super magnetism single domain granule can follow same direction orientation and reach the magnetic saturation, and the magnetic susceptibility is higher, consequently, the utility model provides a tunnel magnetism resistance has big saturation field and big linearity. The free layer is positioned between the bottom layer conductive structure and the tunneling barrier layer, and because the film layer structure is less before the free layer is formed, the bottom layer conductive structure is smoother, the free layer is not easily influenced by the front film layer when the free layer is formed, so that the continuous and uniform free layer film layer is easily obtained, and the process is controlled more easily and stably.
2. Further, the bottom layer conductive structure includes a bottom layer conductive body and an interface layer, the interface layer being located between the bottom layer conductive body and the free layer; the interfacial layer comprises a Ta interfacial layer or a Ru interfacial layer. The interface layer effectively prevents the free layer from diffusing to the bottom layer conductive body, and ensures the thermal stability of the free layer.
3. The utility model provides a tunnel magnetic device forms tunnel magnetic device to a plurality of tunnel magnetism resistance series connection, can be applied to and require great sensor field to the saturated field.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIGS. 1 to 7 are schematic structural views illustrating a tunneling magnetoresistance forming process according to the present invention;
fig. 8 illustrates a condition of an annealing magnetization process according to an embodiment of the present invention;
FIG. 9 is a TMR output curve for a prior art tunneling magnetoresistance;
fig. 10 is a TMR output curve of a tunneling magnetoresistance according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a tunnel magnetic device according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.
The embodiment provides a manufacturing method of a tunneling magnetoresistance, which comprises the following steps: forming a pinning layer; forming a free layer having a thickness less than or equal to a critical thickness; forming a tunneling barrier layer between the step of forming the pinned layer and the step of forming the free layer; and annealing the free layer to enable the free layer to become a superparamagnetic layer.
Fig. 1 to fig. 7 are schematic structural diagrams of a tunneling magnetoresistance forming process according to an embodiment of the present invention.
Referring to fig. 1, a substrate 1a is provided.
The substrate 1a may be a silicon substrate or a glass substrate.
Referring to fig. 2, a bottom conductive structure 2a is formed on a surface of one side of a substrate 1 a.
The step of forming the underlying conductive structure 2a includes: forming a bottom layer conductive body 201a on one surface of the substrate 1 a; an interface layer 202a is formed on the surface of the underlying conductive body 201a on the side facing away from the substrate 1 a.
The interfacial layer 202a includes a Ta interfacial layer or a Ru interfacial layer.
The interface layer effectively prevents the free layer 5a from diffusing toward the underlying conductive body 201a during the subsequent annealing magnetization process, ensuring the thermal stability of the free layer 5 a.
Referring to fig. 3, a free layer 5a is formed on a surface of the interface layer 202a facing away from the underlying conductive body 201 a.
The free layer 5a in this embodiment is a single-layer structure.
In one embodiment, the free layer 5a comprises CoFe40B20The free layer, in other embodiments, the free layer 5a may also be CoFe60B20A free layer.
The thickness of the free layer 5a is less than or equal to the critical thickness. The thickness of the free layer 5a is 1.0nm to 1.4nm, and may be, for example, 1.0nm, 1.2nm, 1.3nm, or 1.4 nm.
The process for forming the free layer 5a comprises a magnetron sputtering process, and a special magnetron sputtering device is adopted, so that the coating precision is within 0.01nm, and the required film thickness and precision of the free layer 5 are ensured.
Referring to fig. 4, a tunnel barrier layer 4a is formed on the surface of the free layer 5a opposite to the interface layer 202 a.
The tunnel barrier layer 4a includes an MgO tunnel barrier layer.
The thickness of the tunneling barrier layer 4a is 0.5nm to 1.5nm, for example, 0.5nm, 1nm, 1.2nm, or 1.5nm, and the thickness of the tunneling barrier layer 4a can be adjusted according to the actual resistance requirement of the tunneling magnetoresistance.
Referring to fig. 5, a pinned layer 3a is formed on a surface of the tunnel barrier layer 4a on a side facing away from the free layer 5 a.
In the present embodiment, the step of forming the pinned layer 3a includes: forming a first sub-pinning film 301a on a surface of the tunnel barrier layer 4a on a side facing away from the free layer 5 a; forming a second sub-pinning film 302a on a surface of the first sub-pinning film 301a on a side facing away from the tunnel barrier layer 4 a; forming a third sub-pinning film 303a on a surface of the second sub-pinning film 302a on a side facing away from the first sub-pinning film 301 a; a fourth sub-pinning film 304a is formed on a surface of the third sub-pinning film 303a on a side facing away from the second sub-pinning film 302 a.
In one embodiment, the first sub-pinned film 301a comprises CoFe40B20The thickness of the first sub-pinning film 301a is 1.4nm to 3nm, and may be 1.4nm, 1.8nm, 2nm, 2.5nm, or 3nm, for example.
In one embodiment, the second sub-pinned film 302a includes a Ru sub-pinned film, and the thickness of the second sub-pinned film 302a is 0.7nm to 1.0nm, for example, may be 0.7nm, 0.85nm, or 1 nm.
In one embodiment, the third sub-pinned film 303a comprises CoFe30The thickness of the sub-pinning film and the third sub-pinning film 303a is 1.5nm to 2nm, and may be 1.5nm, 1.6nm, or 1, for example.8nm or 2 nm.
In one embodiment, the fourth sub-pinned film 304a includes PtMn62The thickness of the sub-pinning film and the fourth sub-pinning film 304a is 15nm to 20nm, and may be 15nm, 16nm, 18nm, or 20nm, for example.
In one embodiment, PtMn62As ferromagnetic layer, CoFe40B20、Ru and CoFe30Forming an antiferromagnetic composite layer.
Referring to fig. 6, a top layer conductive structure 6a is formed on a side of the pinned layer 3a, the tunneling barrier layer 4a, and the free layer 5a facing away from the substrate 1a as a whole.
Specifically, a top layer conductive structure 6a is formed on the surface of the pinning layer 3a on the side facing away from the tunnel barrier layer 4 a.
The step of forming the top layer conductive structure 6a includes: forming a first top conductive film on a surface of the pinning layer 3a on a side facing away from the tunneling barrier layer 4 a; forming a second top conductive film on a surface of the first top conductive film on a side opposite to the pinning layer 3 a; and forming a third top conductive film on the surface of the second top conductive film on the side opposite to the first top conductive film.
In one embodiment, the first top conductive film may be a Ta conductive film with a thickness of 4nm to 4nm, such as 5 nm.
In one embodiment, the second top conductive film may be a Ru conductive film with a thickness of 8nm to 12nm, such as 10 nm.
In one embodiment, the third top conductive film may be a Ta conductive film with a thickness of 4nm to 4nm, such as 5 nm.
Referring to fig. 7, the free layer 5a is annealed and magnetized so that the free layer 5a becomes a superparamagnetic layer. It should be noted that the annealing magnetization process may be performed after the free layer 5a is fabricated and before the tunnel barrier layer 4a is fabricated, or may be performed after the whole tunnel magnetoresistance is fabricated.
Referring to fig. 8, fig. 8 provides an annealing condition for annealing magnetization of the free layer 5a, where the horizontal axis in fig. 8 is time in hours; the longitudinal major axis in fig. 8 is the temperature used for the annealing magnetization process and is given in units of deg.c, and the longitudinal minor axis in fig. 8 is the magnetic field applied for the annealing magnetization process and is given in units of Gs.
In one embodiment, the annealing temperature in the annealing magnetization process is 330 ℃ to 400 ℃, and may be 330 ℃, 350 ℃, 380 ℃ or 400 ℃, for example. The annealing temperature is appropriately selected depending on the material of the pinning layer 3a, and generally the annealing temperature needs to be higher than the curie temperature of the material of the pinning layer 3 a. The improvement of the annealing temperature can promote the lattice formation of the free layer 5a, so that the superparamagnetic effect of the free layer 5a is more obvious, and the larger the saturated field of the tunnel magnetoresistance is, the better the linearity in the saturated field is; an excessively high annealing temperature may affect the thermal stability of the magnetic material.
In one embodiment, the annealing time in the annealing magnetization treatment is 2 hours to 6 hours, and may be, for example, 2 hours, 3 hours, 4 hours, or 6 hours. The annealing time is too short, the process of lattice-forming the pinned layer 3a and the free layer 5a does not reach a stable state, and an excessively long annealing time is not necessary when the pinned layer 3a and the free layer 5a reach a stable state. The extension of the annealing time can promote the lattice formation of the free layer 5a, so that the superparamagnetic effect of the free layer 5a is more obvious, and the larger the saturation field of the tunnel magnetoresistance is, the better the linearity in the saturation field is. The process efficiency is reduced and the cost is increased when the time is overlong.
In the present embodiment, in the annealing magnetization process, the magnetization direction is parallel to the surface of the free layer 5a opposite to the pinned layer 3 a. When the annealing magnetization process is completed, the pinned layer 3a forms a fixed magnetic moment, and the direction of the magnetic moment in the pinned layer 3 is parallel to the magnetization direction.
In one embodiment, the magnetic field strength applied in the annealing magnetization treatment is 4000 Gs-20000 Gs, and may be 4000Gs, 10000Gs, 15000Gs or 20000Gs, for example. An excessively high magnetic field strength is not necessary, and an excessively low magnetic field strength, which is appropriately selected depending on the material and thickness of the pinned layer 3a, does not effectively magnetize the pinned layer 3 a.
During annealing magnetization, the linearity of the tunneling magnetic device can be increased by increasing the annealing temperature or extending the annealing time.
In the present embodiment, since the interface layer 202a is located between the underlying conductive body 201a and the free layer 5a, the interface layer 202a can effectively prevent diffusion of the free layer 5a during the annealing magnetization treatment, ensuring thermal stability of the free layer 5 a.
The annealing magnetization treatment makes the free layer 5a lattice-like, and the free layer 5a in the tunneling magnetoresistance forms superparamagnetic.
The free layer 5a in the tunnel magnetoresistance is a super paramagnetic layer with the thickness less than or equal to the critical thickness, and in the annealing magnetization treatment process, the magnetic moments of single domain particles forming super paramagnetic particles can be oriented along the same direction to achieve magnetic saturation, and the magnetic susceptibility is high. Therefore, the tunneling magnetoresistance provided by the present embodiment has a large saturation field and a large linearity.
In this embodiment, the free layer 5a is located between the bottom layer conductive structure 2a and the tunneling barrier layer 4a, because the film layer structure before the formation of the free layer 5a is less, and the bottom layer conductive structure 2a is relatively flat, it is not easily affected by the front layer film layer when the free layer 5a is formed, so that a continuous and uniform film layer of the free layer 5a is easily obtained, and the process is more easily and stably controlled.
An embodiment of the present invention provides a tunneling magneto-resistance, please refer to fig. 7, including: a pinning layer 3 a; a free layer 5a disposed opposite to the pinned layer 3a, the free layer 5a being a superparamagnetic layer, the free layer 5a having a thickness less than or equal to a critical thickness; a tunneling barrier layer 4a between the pinned layer 3a and the free layer 5 a; and the bottom layer conductive structure 2a is positioned on the side of the free layer 5a, which faces away from the tunneling barrier layer 4 a.
The tunneling magnetoresistance further comprises a substrate 1a, the substrate 1a being located on a side of the free layer 5a facing away from the tunneling barrier layer 4 a.
The substrate 1a may be a silicon substrate or a glass substrate.
In this embodiment, the tunneling magnetoresistance has a top layer conductive structure 6a, the pinned layer 3a, the free layer 5a, and the tunneling barrier layer 4a are all located between the top layer conductive structure 6a and the bottom layer conductive structure 2a, and the pinned layer 3a is located between the top layer conductive structure 6a and the tunneling barrier layer 4 a.
The bottom layer conductive structure 2a includes a bottom layer conductive body 201a and an interface layer 202a, the interface layer 202a being located between the bottom layer conductive body 201a and the free layer 5 a; the interfacial layer 202a includes a Ta interfacial layer or a Ru interfacial layer.
The free layer 5a comprises CoFe40B20The free layer, in other embodiments, the free layer 5a may also be CoFe60B20A free layer.
The free layer 5a in this embodiment is a single-layer structure.
The free layer 5a is a superparamagnetic layer, and the thickness of the free layer 5a is less than or equal to a critical thickness. The thickness of the free layer 5a is 1.0nm to 1.4nm, and may be, for example, 1.0nm, 1.2nm, 1.3nm, or 1.4 nm.
The tunnel barrier layer 4a includes an MgO tunnel barrier layer.
The thickness of the tunneling barrier layer 4a is 0.5nm to 1.5nm, for example, 0.5nm, 1nm, 1.2nm, or 1.5nm, and the thickness of the tunneling barrier layer 4a can be adjusted according to the actual resistance requirement of the tunneling magnetoresistance.
The pinning layer 3a includes: a first sub-pinning film 301a, a second sub-pinning film 302a, a third sub-pinning film 303a, and a fourth sub-pinning film 304a, wherein the first sub-pinning film 301a, the second sub-pinning film 302a, the third sub-pinning film 303a, and the fourth sub-pinning film 304a are sequentially stacked in a direction from the free layer 5a to the tunnel barrier layer 4 a.
In one embodiment, the fourth sub-pinned film 304a includes PtMn62The thickness of the sub-pinning film and the fourth sub-pinning film 304a is 15nm to 20nm, and may be 15nm, 16nm, 18nm, or 20nm, for example.
In one embodiment, the third sub-pinned film 303a comprises CoFe30The thickness of the sub-pinning film and the third sub-pinning film 303a is 1.5nm to 2nm, and may be, for example, 1.5nm, 1.6nm, 1.8nm, or 2 nm.
In one embodiment, the second sub-pinned film 302a includes a Ru sub-pinned film, and the thickness of the second sub-pinned film 302a is 0.7nm to 1.0nm, for example, may be 0.7nm, 0.85nm, or 1 nm.
In one embodiment, the first sub-pinned film 301a comprises CoFe40B20A first sub-pinning film 301a having a thickness of 1.4 nm-3nm, for example, may be 1.4nm, 1.8nm, 2nm, 2.5nm or 3 nm.
The top conductive structure 6a includes a first top conductive film, a second top conductive film, and a third top conductive film stacked in this order from bottom to top.
In one embodiment, the first top conductive film comprises a Ta conductive film with a thickness of 4nm to 6nm, such as 5 nm.
In one embodiment, the second top conductive film comprises a Ru conductive film with a thickness of 8nm to 12nm, such as 10 nm.
In one embodiment, the third top conductive film comprises a Ta conductive film with a thickness of 4nm to 6nm, such as 5 nm.
Referring to fig. 9, fig. 9 is a TMR output curve of tunneling magnetoresistance in the prior art, where the horizontal axis in fig. 9 is applied magnetic field strength in Gs; the vertical axis in fig. 9 represents the TMR ratio in%. In FIG. 9, the saturation field of the tunneling magnetoresistance is relatively small, the absolute value is smaller than 300Gs, and the TMR rate has small linearity along with the change of an external magnetic field.
Referring to fig. 10, fig. 10 is a TMR output curve of tunneling magnetoresistance according to the present embodiment, where the horizontal axis in fig. 10 is magnetic field strength, and the unit is Gs; the vertical axis in fig. 10 represents the TMR ratio in%. In the tunnel magnetoresistance of fig. 10, since the free layer 5 of the superparamagnetic layer is used, the saturation field of the tunnel magnetoresistance is relatively large, the absolute value is 2000Gs, and the linearity of the TMR ratio with the change of an external magnetic field is large.
Another embodiment of the present invention further provides a tunnel magnetic device, including the above tunnel magnetic resistor, please refer to fig. 11, the number of the tunnel magnetic resistors in the tunnel magnetic device is a plurality, and the tunnel magnetic resistors are connected in series.
In the embodiment, the substrate 1a in each tunneling magneto-resistance is full-faced, and adjacent tunneling magneto-resistances are electrically connected through the bottom layer conductive structure 2a or the top layer conductive structure 6 a; the series connection may be electrically connected by a wire 7 a.
A plurality of tunnel magneto resistors are connected in series to form a tunnel magnetic device, and the tunnel magnetic device can be applied to the field of sensors with large requirements on saturation fields.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications can be made without departing from the scope of the invention.
Claims (10)
1. A tunneling magnetoresistance, comprising:
a pinning layer;
the free layer is arranged opposite to the pinning layer, the free layer is a superparamagnetic layer, and the thickness of the free layer is smaller than or equal to the critical thickness;
a tunneling barrier layer between the pinned layer and the free layer;
and the bottom layer conductive structure is positioned on one side of the free layer, which faces away from the tunneling barrier layer.
2. Tunneling magnetoresistance according to claim 1, wherein the free layer comprises CoFe40B20Free layer or CoFe60B20A free layer.
3. Tunneling magnetoresistance according to claim 1 or 2, wherein the thickness of the free layer is 1.0nm to 1.4 nm.
4. The tunneling magneto-resistor of claim 1, further comprising: the pinning layer is positioned between the top layer conductive structure and the bottom layer conductive structure, and the pinning layer is positioned between the top layer conductive structure and the tunneling barrier layer.
5. The tunneling magnetoresistance of claim 1, wherein the bottom conductive structure comprises a bottom conductive body and an interface layer, the interface layer being between the bottom conductive body and the free layer.
6. Tunneling magnetoresistance according to claim 5, wherein the interface layer comprises a Ta interface layer or a Ru interface layer.
7. The tunneling magnetoresistance of claim 1, wherein the pinning layer comprises: the tunneling barrier layer is formed by sequentially stacking a first sub pinning film, a second sub pinning film, a third sub pinning film and a fourth sub pinning film in the direction from the free layer to the tunneling barrier layer;
the first sub-pinning film comprises CoFe40B20A sub-pinning film;
the second sub-pinning film comprises a Ru sub-pinning film;
the third sub-pinning film comprises CoFe30A sub-pinning film;
the fourth sub-piercing film comprises PtMn62A seed pinning film.
8. The tunneling magnetoresistance of claim 7, wherein the first sub-pinned film has a thickness of 1.4nm to 3 nm; the thickness of the second sub pinning film is 0.7 nm-1.0 nm; the thickness of the third sub pinning film is 1.5 nm-2 nm; the thickness of the fourth sub pinning film is 15 nm-20 nm.
9. A tunneling magnetic device, comprising: tunneling magnetoresistance according to any of claims 1 to 8.
10. The tunneling magnetic device of claim 9, wherein the tunneling magneto-resistance is several in number, and the tunneling magneto-resistance is connected in series.
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