CN203521478U - Ferroelectric/ferromagnetic superlattice structure and memory thereof - Google Patents
Ferroelectric/ferromagnetic superlattice structure and memory thereof Download PDFInfo
- Publication number
- CN203521478U CN203521478U CN201320599712.0U CN201320599712U CN203521478U CN 203521478 U CN203521478 U CN 203521478U CN 201320599712 U CN201320599712 U CN 201320599712U CN 203521478 U CN203521478 U CN 203521478U
- Authority
- CN
- China
- Prior art keywords
- superlattice structure
- layer
- ferroelectric
- leadless piezoelectric
- ferromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses a ferroelectric/ferromagnetic superlattice structure and a memory thereof. The superlattice structure comprises a monocrystalline bottom layer, a bottom electrode layer arranged on the monocrystalline bottom layer and formed by conductive oxide, and a lamination layer arranged on the bottom electrode layer and formed by alternatively laminating leadless piezoelectric ceramic layers and multiferroic thin layers, wherein the leadless piezoelectric ceramic layers and the multiferroic thin layers form an epitaxial structure together. The memory comprises the superlattice structure. The superlattice structure can be widely applied to ferroelectric memories used for magnetic control, electric control and magnetoelectric control.
Description
Technical field
The utility model belongs to FERROELECTRICS MEMORIES TECHNOLOGY field, provide a kind of novel have strong magnetoelectric effect ferroelectric/Ferromagnetic Superlattices structure.
Background technology
Ferroelectric memory is the novel memory that a kind of volume working out for nearly more than 10 years is little, access speed is fast, the life-span is long, low in energy consumption, has fabulous application background.Along with the development of IT technology, increasing for the demand of nonvolatile memory, read or write speed requires more and more faster, and power consumption requires more and more less.All functions of the compatible RAM of ferroelectric memory energy, and the same with ROM technology, be a kind of non-volatile memory.Ferroelectric memory is asked and has been set up bridge---an a kind of non-volatile RAM who crosses over gully in this two classes storage class.With traditional nonvolatile memory, compare, ferroelectric memory has the advantages such as power consumption is little, read or write speed is fast, Radiation hardness is strong, for the actual demand that meets following memory device, has great importance.
Multi-ferroic material (mutliferroics) refers to have in ferroelectricity, ferromagnetism and ferroelasticity the Multifunction material of both or both above performances simultaneously, there are ferromagnetism and ferroelectricity and two kinds of magnetoelectric effects that property produces, the possibility of utilizing electric polarization simultaneously and magnetizing the storing information of encoding is provided, thereby can prepare the New Magnetic Field Controlled storage medium [G.A.Prinz that fast, the ferroelectric record of magnetic recording reading speed writes fast superelevation speed read-write process, et al, Science, 282:1660-1661 (1998); S.A.Wolf, et al, Science, 294:1488-1490 (2001); S.W.Cheong, et al, Nat.Mater., 6:13-20 (2007); Y.Tokura, et al, J Magn.Magn.Mater, 310:1145-1150 (2007); W.Eerenstein, et al, Nature, 422:759-765 (2006)].In recent years, along with the raising of people to device miniaturization, sensitivity and polyfunctional requirement, in the urgent need to researching and developing a kind of new material or new structure, to realize people's an urgent demand.At present, people have carried out a large amount of research to magnetoelectric effect, research is found can to carry out respectively independent electricity regulation and control (being mainly to regulate polarised direction), magnetic tuning (being mainly to regulate the direction of magnetization), and magnetoelectricity intermodulation control under the multi-iron material regulation and control of Electric and magnetic fields outside.At present, regulation and control [the V.Lankhim of electric field to magnetic moment direction, et al, Phys.Rev.Lett, 97:227201 (2006)] and utilize magneto-resistance effect to prepare the magnetic recording read head [V.Marian of multiferroic, et al.J.Phys.D:Appl.Phys., 40:5027-503 (2007)] realize.These achievements in research have been confirmed the feasibility of magnetoelectricity cross complaint non-volatile memory device.Above-mentioned multi-ferroic material has ABO
3the single-phase multi-ferroic material of type and ferroelectric-ferromagnetic compound system material: BiFeO
3, GaFeO
3, BiCrO
3, TbMnO
3, Bi
2feCrO
6, BiMnO
3, HoMn
2o
5, YMn
2o
5, RMn
2o
5(R=Ho, Yb, Sc, Y, Ga, Dy or Er), RMnO
3single phase multi-iron materials such as (R=Ho, Yb, Sc, Y, Ga, Dy or Er); And the doped derivatives of above-mentioned different materials and solid solution derivative.
Piezoelectricity ferro material is being widely used aspect detection, conversion, processing, demonstration and the storage of information, is a kind of important high-tech functional material.Conventional piezoelectric pottery is mainly to take leaded lead zirconate titanate (PZT) based material as main, its main component is lead oxide (more than 60-70%), plumbous different from other metals, be easy to dissolve, lead oxide toxicity is large, and volatile, large to human body and environmental hazard, during recovery, easily depart from former stoichiometric proportion and cause reusing poor.Many countries have prohibited the use of leaded electronic material.In recent years, leadless piezoelectric ceramics becomes study hotspot, and has obtained good performance.Leadless piezoelectric ceramics can be barium titanate (BaTiO
3) base (BT yl) leadless piezoelectric ceramics, bismuth-sodium titanate [(Bi
0.5na
0.5) TiO
3] base (BNT yl) leadless piezoelectric ceramics and alkali metal potassium-sodium niobate [(K, Na) NbO
3] base (KNN yl) is the perovskite structure piezoelectric ceramic of representative; With strontium barium niobate (Sr
1-xba
xnb
2o
6) be and barium sodium niobate (NaBa
2nb
5o
15) for the tungsten bronze structure piezoelectric ceramic of representative with mainly comprise with bismuth titanates (Bi
4ti
3o
12), bismuth calcium titanate (CaBi
4ti
4o
15) and bismuth titanates strontium (SrBi
4ti
4o
15) for the bismuth laminated leadless piezoelectric ceramic of representative; And the doped derivatives of above-mentioned different materials and solid solution derivative.
But with regard to single multi-iron material or piezoelectric, no matter be solid or film, all exist such as shortcomings such as electric leakage are large, polarization is difficult, magneto-electric coupled coefficient is little, this has hindered the practical application of these materials.In order to pursue the better performance of memory device, improve the sensitivity of its read-write process, realize high density storage etc., on the basis of existing material, must prepare and there is good new construction.Forefathers' research is verified, utilizes multilayer film that the Material cladding of different materials or heterogeneity gradient forms can improve the performance of material.
Utility model content
The purpose of this utility model is to provide a kind of novel film superlattice structure of ferroelectric/ferromagnetic coupling effect by force that has.
According to one side of the present utility model, provide a kind of ferroelectric/Ferromagnetic Superlattices structure, it is characterized in that, described superlattice structure comprises: monocrystalline bottom; Be positioned at the bottom electrode layer being formed by conductive oxide on monocrystalline bottom; And be positioned on bottom electrode layer and replace lamination stacking and that form by leadless piezoelectric ceramics layer and many iron thin films layer, wherein leadless piezoelectric ceramics layer forms epitaxial structure together with many iron thin films layer.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, described monocrystalline bottom comprises a kind of in monocrystal chip and monocrystal thin films.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, described bottom electrode layer comprises La
0.7sr
0.3mnO
3, LaNiO
3, SrRuO
3in a kind of, and thickness is 1-30 nanometer.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, described leadless piezoelectric ceramics layer comprises a kind of in single-phase leadless piezoelectric ceramics, its doping and solid solution, and thickness is 1-30 nanometer.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, the dopant using in the leadless piezoelectric ceramics of doping comprises following at least one element: Na, Sr and Nd.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, described leadless piezoelectric ceramics comprises following a kind of: take the potassium-sodium niobate-based perovskite structure piezoelectric ceramic as representative of barium titanate-based lead-free piezoelectric ceramic, bismuth-sodium titanate base lead-free piezoelectric ceramic and alkali metal; The tungsten bronze structure piezoelectric ceramic that the strontium barium niobate of take system and barium sodium niobate are representative; Take the bismuth laminated leadless piezoelectric ceramic that bismuth titanates, bismuth calcium titanate and bismuth titanates strontium be representative.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, described many iron thin films layer comprises a kind of in single phase multi-iron material, its doping and solid solution, and thickness is 1-30 nanometer.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, the dopant using in the multi-iron material of doping comprises following at least one element: Ca, La, Mn, Mo and Y.
Preferably, described ferroelectric/Ferromagnetic Superlattices structure in, described multi-iron material comprise following at least one: BiFeO
3, GaFeO
3, BiCrO
3, TbMnO
3, Bi
2feCrO
6, BiMnO
3, HoMn
2o
5, YMn
2o
5, RMn
2o
5, RMnO
3, wherein R=Ho, Yb, Sc, Y, Ga, Dy or Er.
According on the other hand of the present utility model, a kind of memory device is provided, it is characterized in that, comprising: above-mentioned superlattice structure; And be positioned at the top electrode layer in the intermediate laminate of superlattice structure.
The utility model has the advantage of:
Multi-ferroic material has antiferromagnetism, and leadless piezoelectric ceramics has good piezoelectric property, better polarization performance, low-coercivity and high dielectric property, so utilize the antiferromagnetism of multi-iron material and piezoelectric ceramic in ferroelectric/ferromagnetic coupling of its interface formation, produce charge polarization and piezoelectric effect, good capacitive character, dielectric property, little coercive force, and good stability.The utility model is used the material of above two kinds of premium properties, is designed to bring into play and to expand the superlattice structure of its performance.
By controlling on the basis of structure, composition, bed thickness (nm rank) and sedimentary condition etc. of material, use two or more different materials with the thickness alternate epitaxial growth of several nanometers or tens nanometers, the strong monocrystalline system of formation directive property.In superlattice structure, because the intermembranous lattice parameter of adjacent two layers is different, total can produce quite large epitaxial stress, and because every tunic is thick thinner, interlayer coupling is stronger with respect to common multilayer film or monofilm.Simultaneously in superlattice structure, interface will be obviously more than monofilm and be different from common multilayer film.In addition, there is the Multiple Quantum Well that superlattice characteristic structure is known as again coupling, in these separated quantum well, electronic state in quantum well, phonon state and other elementary excitation processes and the interaction between them, have very big difference with the situation in said three-dimensional body shape material, the density of states in electronics and hole and the relation of energy also have obvious difference with said three-dimensional body material.Practice and theory all prove, superlattice structure is obviously different from conventional films material property, and ferroelectric, piezoelectricity, dielectric and ferromagnetic property etc. are all greatly improved.Our experimental result also proves, the performance of the device of the above-mentioned superlattice structure of making will be much better than the performance of common multilayer film or monofilm.
Comprise above-mentioned ferroelectric/memory device of Ferromagnetic Superlattices structure, the magnetoelectric effect that can have, electric property, ferroelectric effect, ferromagnetic effects, piezoelectric effect, anti-fatigue performance, charge storage capacity and good stability.This novel superlattice structure will be widely used in the ferroelectric memory electronic device of magnetic control, automatically controlled, magnetoelectricity cross complaint, it will be by electric current and magnetic field to regulating and controlling, realize magnetic control, automatically controlled, the non-volatile high density ferroelectric memory device of magnetoelectricity cross complaint, make memory device when thering is high-speed read-write performance, meet the requirements such as hypersensitivity, the storage of non-volatile, high density and multifunction.
Multi-ferroic material provides the possibility of utilizing electric polarization simultaneously and magnetizing the storing information of encoding.And leadless piezoelectric ceramics has high dielectric property, good piezoelectric property, good environmentally friendly and biological innocuousness etc.Due to the special effects of superlattice structure, interface interaction has between the two played positive improved action to device performance, gives full play to and expanded its performance and purposes simultaneously.Therefore, the superlattice structure of being prepared by this bi-material will obtain the good magnetoelectricity performance of control of 1+1>2, this will improve electric property and the magnetoelectricity cross complaint performance of the ferroelectric memory electronic device of magnetoelectricity cross complaint, and then makes the magnetoelectricity cross complaint non-volatile memory magnetic medium of superelevation storage density become possibility.
Importantly, multi-iron material, leadless piezoelectric and conductive oxide material are ripe day by day aspect preparation, and the utility model substrate for use is also commercially produced product, and pulsed laser deposition used and magnetron sputtering are also comparatively ripe preparation methods.Under assurance film quality prerequisite, can carry out suitability for industrialized production, and can comparatively effectively control cost.With respect to other magneto-electric coupled materials, advantage of the present utility model is: preparation process is comparatively simple; Magneto-electric coupled strong, stable performance; Can greatly reduce device volume and realize device miniaturization; Realize multi-functionally, except realizing non-volatile memories, also can be used for the detection of information, process etc.; Environmental protection simultaneously, environment compatibility is good etc.
Unleaded (conductive oxide layer/leadless piezoelectric ceramics/multi-iron material) superlattice structure that storage organization of the present utility model has strong magnetoelectric effect is prepared from by conventional film deposition equipment (technology such as magnetron sputtering and pulsed laser deposition).
Accompanying drawing explanation
Shown in Fig. 1 be of the present utility model ferromagnetic/ferroelectric superlattice structural representation.
Fig. 2 a-2d represents respectively the magnetic control of memory device of the present utility model, automatically controlled, magnetoelectricity cross complaint schematic diagram.M represents the direction of magnetization, and P represents polarised direction, and E represents extra electric field, and H represents externally-applied magnetic field.
Embodiment
Hereinafter with reference to accompanying drawing, the utility model is described in more detail.Whether in the following description, no matter be presented in different embodiment, similarly parts adopt same or similar Reference numeral to represent.In each accompanying drawing, for the sake of clarity, the various piece in accompanying drawing is not drawn in proportion.
Described hereinafter many specific details of the present utility model, for example structure of device, material, size, treatment process and technology, to more clearly understand the utility model.But just as the skilled person will understand, can realize the utility model not according to these specific details.Unless particularly pointed out hereinafter, the various piece in superlattice structure and memory device can consist of the known material of those skilled in the art, or can adopt the material with similar functions of exploitation in the future.
Shown in Fig. 1 be of the present utility model ferromagnetic/schematic diagram of ferroelectric superlattice structure 100.Monocrystalline bottom 101 comprises and is not limited to monocrystal chip, can also be to be positioned at monocrystalline or the on-chip monocrystal thin films of polycrystalline.Bottom electrode layer 102 is positioned at monocrystalline bottom 101 tops, by La
0.7sr
0.3mnO
3, LaNiO
3, SrRuO
3deng conductive oxide, form, thickness is about 1-30 nanometer.
Leadless piezoelectric ceramics layer 103
1be positioned at bottom electrode layer 102 tops and epitaxial growth, leadless piezoelectric ceramics layer 103
1single-phase leadless piezoelectric ceramics, or the leadless piezoelectric ceramics of doping, or the solid solution of single-phase leadless piezoelectric ceramics, thickness is about 1-30 nanometer.
Leadless piezoelectric ceramics can be barium titanate (BaTiO
3) base (BT yl) leadless piezoelectric ceramics, bismuth-sodium titanate [(Bi
0.5na
0.5) TiO
3] base (BNT yl) leadless piezoelectric ceramics and alkali metal potassium-sodium niobate [(K, Na) NbO
3] base (KNN yl) is the perovskite structure piezoelectric ceramic of representative; With strontium barium niobate (Sr
1-xba
xnb
2o
6) be and barium sodium niobate (NaBa
2nb
5o
15) for the tungsten bronze structure piezoelectric ceramic of representative with mainly comprise with bismuth titanates (Bi
4ti
3o
12), bismuth calcium titanate (CaBi
4ti
4o
15) and bismuth titanates strontium (SrBi
4ti
4o
15) for the bismuth laminated leadless piezoelectric ceramic of representative.The dopant using in the leadless piezoelectric ceramics of doping comprises following at least one element: Na, Sr and Nd.
Many iron thin films layer 104
1be positioned at leadless piezoelectric ceramics layer 103
1top and epitaxial growth, described many iron thin films layer 104
1for single phase multi-iron material, or the multi-iron material of doping, or the solid solution of multi-iron material, thickness is about 1-30 nanometer.
Multi-iron material can be BiFeO
3, GaFeO
3, BiCrO
3, TbMnO
3, Bi
2feCrO
6, BiMnO
3, HoMn
2o
5, YMn
2o
5, RMn
2o
5(R=Ho, Yb, Sc, Y, Ga, Dy or Er), RMnO
3(R=Ho, Yb, Sc, Y, Ga, Dy or Er) etc.The dopant using in the multi-iron material of doping comprises following at least one element: Ca, La, Mn, Mo and Y.
Subsequently, leadless piezoelectric ceramics layer 103
2-103
nrespectively at many iron thin films layer 104
1-104
n-1top alternate epitaxial growth, one deck of top is many iron thin films layer 104
n.Due to leadless piezoelectric ceramics layer 103
1-103
nthickness and many iron thin films layer 104
1-104
nthickness between 1-30 nanometer, can regulate respectively, therefore in different superlattice structures, leadless piezoelectric ceramics layer 103
1-103
nwith many iron thin films layer 104
1-104
nin adjacent two layers thickness proportion can change, and periodically repeat epitaxial growth according to this thickness proportion.Total periodicity N is 1-30.
This superlattice structure 100 is because the epitaxial growth of each layer forms the monocrystalline system that directive property is strong, and shows ferroelectric and ferromagnetic characteristic.
According to memory device of the present utility model (not illustrating separately) comprise above-mentioned ferromagnetic/ferroelectric superlattice structure 100 and be positioned at the top electrode layer 201 in the intermediate laminate of superlattice structure 100.Described top electrode layer 101 can be the conducting metals such as Au, Pt, Ag, Cu.
Fig. 2 a-2d represents respectively the magnetic control of memory device of the present utility model, automatically controlled, magnetoelectricity cross complaint schematic diagram, wherein shows top electrodes 201.M represents the direction of magnetization, and P represents polarised direction, and E represents extra electric field, and H represents externally-applied magnetic field.Fig. 2 a represents the regulation and control read-write mode of stationary electric field E writing mode to polarised direction P and direction of magnetization M.Fig. 2 b represents the regulation and control read-write mode of probe electronically written mode (write+E or-E) to polarised direction P and direction of magnetization M.Fig. 2 c represents the regulation and control read-write mode of externally-applied magnetic field H to polarised direction P and direction of magnetization M.Fig. 2 d represents externally-applied magnetic field H and the stationary electric field E regulation and control read-write mode to polarised direction P and direction of magnetization M jointly.
As shown in Fig. 2 a and 2b, under extra electric field E effect, the ferroelectric layer of ferromagnetic/ferroelectric superlattice structure is subject to stress modulation, pass through layer coupling, the internal stress of many iron layer regulates internal polarization direction and intensity, affect the turning to of intrinsic magnetized axis of many iron layer, on the other hand due to the interface coupling of superlattice system, the dipole at interface and spin pairing form orbital hybridization, affect electron spin-orbit coupling and interact, finally cause the change of polarised direction and the magnetization and the direction of magnetization of superlattice structure.
As shown in Figure 2 c, under additional magnetic field H effect, the spinning electron of ferromagnetic/many iron of ferroelectric superlattice system distributes and is modulated, due to Intrinsic Spin-orbit coupling effect between many iron lattice layer, the magnetic order of adjacent cells layer is subject to the pinning coupling modulation of contiguous many iron layer, and then the dipole that affects ferroelectric layer distributes, change the interlayer polarization of ferromagnetic/ferroelectric superlattice system, finally cause the polarization characteristic (intensity and direction) of whole superlattice system to change.
As shown in Figure 2 d, add outside under the acting in conjunction of highfield E and externally-applied magnetic field H, additional highfield and externally-applied magnetic field exert an influence to the Intrinsic Spin-track of superlattice and dipole distribution, the Multiple Quantum Well interfacial state of ferromagnetic/ferroelectric superlattice changes, the electronic state of many iron superlattice system, phonon state and other elementary excitation produce and interact, and then change the polarization field of whole superlattice system, the intensity of magnetizing field and direction.Actual test result shows, above-mentioned memory device has been realized the coupling effect of membrane structure under external electric field, magnetic field completely, and has obtained larger polarization performance, less coercive field and very excellent stability.This have strong magnetoelectric effect ferroelectric/Ferromagnetic Superlattices membrane structure will be widely used in the ferroelectric memory device of magnetoelectricity cross complaint, improve sensitivity and the density of the magnetoelectricity cross complaint non-volatile memory magnetic medium of superelevation speed read-write process, make the magnetoelectricity cross complaint non-volatile memory magnetic medium of superelevation storage density obtain develop rapidly, meet miniaturization and the multifunctionality of following device.
Making according to of the present utility model ferroelectric/method of Ferromagnetic Superlattices structure 100 is included in monocrystalline bottom 101 epitaxial growth bottom electrode layers 102, epitaxial growth leadless piezoelectric ceramics layer 103 on bottom electrode layer 102 then
1-Nwith many iron thin films layer 104
1-Nreplace lamination stacking and that form.
In an example, adopt SrTiO
3or SrRuO (100)
3(100) monocrystal chip is as monocrystalline bottom 101, and wherein (100) represent that the first type surface of monocrystal chip is (100) crystal face.Substrate for use is used to Ultrasonic Cleaning three times in turn with alcohol and acetone, each ten minutes, finally use washed with de-ionized water.
In an example, the preparation technology who forms bottom electrode layer 102 on monocrystalline bottom 101 comprises: settling chamber's base vacuum degree must be higher than 10
-4pa, oxygen is pressed as 5Pa-10Pa, and depositing temperature is 550 ℃-800 ℃, and during deposition, energy is 100mJ-400mJ, and umber of pulse is 100-3000 pulse, and annealing temperature is 550 ℃-800 ℃, and oxygen is pressed as 100Pa-300Pa.The conductive oxide of preparation is for example La
0.7sr
0.3mnO
3, LaNiO
3or SrRuO
3, thickness is about 1nm-30nm.
In an example, the preparation technology who forms leadless piezoelectric ceramics layer 1031 at bottom electrode layer 102 comprises: settling chamber's base vacuum degree must be higher than 10
-4pa, oxygen is pressed as 5Pa-10Pa, and depositing temperature is 550 ℃-800 ℃, and during deposition, energy is 100mJ-400mJ, and umber of pulse is 100-3000 pulse, and annealing temperature is 550 ℃-800 ℃, and oxygen is pressed as 100Pa-300Pa.The leadless piezoelectric ceramic thin film of preparation is for example BaTiO
3, (Bi
0.5na
0.5) TiO
3, (K, Na) NbO
3, Sr
1-xba
xnb
2o
6(wherein x changes between 0-1), NaBa
2nb
5o
15, Bi
4ti
3o
12, CaBi
4ti
4o
15or SrBi
4ti
4o
15, thickness is about 1nm-30nm.
In an example, at leadless piezoelectric ceramics layer 103
1upper formation multiferroic film layer 104
1-Npreparation technology comprise: settling chamber's base vacuum degree must be higher than 10
-4pa, oxygen is pressed as 5Pa-10Pa, and depositing temperature is 550 ℃-800 ℃, and during deposition, energy is 100mJ-400mJ, and umber of pulse is 100-3000 pulse, and annealing temperature is 550 ℃-800 ℃, and oxygen is pressed as 100Pa-300Pa.Many iron thin films of preparation are for example BiFeO
3, GaFeO
3, BiCrO
3, TbMnO
3, Bi
2feCrO
6, BiMnO
3, HoMn
2o
5, YMn
2o
5, RMn
2o
5(R=Ho, Yb, Sc, Y, Ga, Dy or Er) or RMnO
3(R=Ho, Yb, Sc, Y, Ga, Dy or Er), thickness is about 1nm-30nm.
Then, as stated above, alternate epitaxial growth leadless piezoelectric ceramics layer 103
2-Nwith 104
2-N, periodically repeat 1-30 cycle, form superlattice structure.
In order further to form memory device, in an example, utilize magnetron sputtering to make top electrode layer 201, base vacuum must be higher than 10
-5pa, sputtering pressure is 0.2-1Pa, substrate circulating water.
More than describing is for example explanation and description the utility model, but not is intended to exhaustive and restriction the utility model.Therefore, the utility model is not limited to described embodiment.For obviously known modification or change of those skilled in the art, all within protection range of the present utility model.
Claims (6)
1. ferroelectric/Ferromagnetic Superlattices structure, is characterized in that, described superlattice structure comprises:
Monocrystalline bottom;
Be positioned at the bottom electrode layer being formed by conductive oxide on monocrystalline bottom; And
Be positioned on bottom electrode layer and replace lamination stacking and that form by leadless piezoelectric ceramics layer and many iron thin films layer, wherein leadless piezoelectric ceramics layer forms epitaxial structure together with many iron thin films layer.
2. superlattice structure according to claim 1, is characterized in that, described monocrystalline bottom comprises a kind of in monocrystal chip and monocrystal thin films.
3. superlattice structure according to claim 1, is characterized in that, the thickness of described bottom electrode layer is 1-30 nanometer.
4. superlattice structure according to claim 1, is characterized in that, the thickness of described leadless piezoelectric ceramics layer is 1-30 nanometer.
5. superlattice structure according to claim 1, is characterized in that, the thickness of described many iron thin films layer is 1-30 nanometer.
6. a memory device, is characterized in that, comprising:
Superlattice structure as described in any one in claim 1-5; And
Be positioned at the top electrode layer in the intermediate laminate of superlattice structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320599712.0U CN203521478U (en) | 2013-09-26 | 2013-09-26 | Ferroelectric/ferromagnetic superlattice structure and memory thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320599712.0U CN203521478U (en) | 2013-09-26 | 2013-09-26 | Ferroelectric/ferromagnetic superlattice structure and memory thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203521478U true CN203521478U (en) | 2014-04-02 |
Family
ID=50380360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320599712.0U Expired - Fee Related CN203521478U (en) | 2013-09-26 | 2013-09-26 | Ferroelectric/ferromagnetic superlattice structure and memory thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203521478U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762275A (en) * | 2016-03-14 | 2016-07-13 | 唐山市盛泰建筑安装有限公司 | Multiferroic/piezoelectric composite structure, storage device and preparation method thereof |
| CN106058039A (en) * | 2016-07-15 | 2016-10-26 | 中国科学院金属研究所 | Lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and preparation method thereof |
| CN106679228A (en) * | 2016-11-18 | 2017-05-17 | 南方科技大学 | Refrigerating device and preparing method thereof |
| CN110527952A (en) * | 2019-07-26 | 2019-12-03 | 沈阳工业大学 | A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof |
| CN110643948A (en) * | 2019-08-29 | 2020-01-03 | 沈阳工业大学 | Strontium titanate/ruthenate strontium ferroelectric superlattice thin film material and preparation method thereof |
| CN111937073A (en) * | 2020-07-03 | 2020-11-13 | 长江存储科技有限责任公司 | Method for reading and writing memory cells in a three-dimensional FeRAM |
| WO2023273213A1 (en) * | 2021-06-30 | 2023-01-05 | 中国科学院深圳先进技术研究院 | Multi-component relaxor ferroelectric thin film material having superlattice structure and ultra high energy storage efficiency, and preparation method therefor |
| CN116063072A (en) * | 2023-01-16 | 2023-05-05 | 西安电子科技大学 | High-temperature piezoelectric ceramic heterojunction material and preparation method thereof |
-
2013
- 2013-09-26 CN CN201320599712.0U patent/CN203521478U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762275A (en) * | 2016-03-14 | 2016-07-13 | 唐山市盛泰建筑安装有限公司 | Multiferroic/piezoelectric composite structure, storage device and preparation method thereof |
| CN106058039A (en) * | 2016-07-15 | 2016-10-26 | 中国科学院金属研究所 | Lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and preparation method thereof |
| CN106058039B (en) * | 2016-07-15 | 2018-12-21 | 中国科学院金属研究所 | A kind of lead zirconate titanate/ruthenic acid strontium ferroelectric superlattice material and preparation method thereof |
| CN106679228A (en) * | 2016-11-18 | 2017-05-17 | 南方科技大学 | Refrigerating device and preparing method thereof |
| CN110527952A (en) * | 2019-07-26 | 2019-12-03 | 沈阳工业大学 | A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof |
| CN110643948A (en) * | 2019-08-29 | 2020-01-03 | 沈阳工业大学 | Strontium titanate/ruthenate strontium ferroelectric superlattice thin film material and preparation method thereof |
| CN111937073A (en) * | 2020-07-03 | 2020-11-13 | 长江存储科技有限责任公司 | Method for reading and writing memory cells in a three-dimensional FeRAM |
| US11170836B1 (en) | 2020-07-03 | 2021-11-09 | Yangtze Memory Technologies Co., Ltd. | Method for reading and writing memory cells in three-dimensional FeRAM |
| US11721377B2 (en) | 2020-07-03 | 2023-08-08 | Yangtze Memory Technologies Co., Ltd. | Method for reading and writing memory cells in three-dimensional FeRAM |
| WO2023273213A1 (en) * | 2021-06-30 | 2023-01-05 | 中国科学院深圳先进技术研究院 | Multi-component relaxor ferroelectric thin film material having superlattice structure and ultra high energy storage efficiency, and preparation method therefor |
| CN116063072A (en) * | 2023-01-16 | 2023-05-05 | 西安电子科技大学 | High-temperature piezoelectric ceramic heterojunction material and preparation method thereof |
| CN116063072B (en) * | 2023-01-16 | 2023-09-22 | 西安电子科技大学 | High-temperature piezoelectric ceramic heterojunction material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203521478U (en) | Ferroelectric/ferromagnetic superlattice structure and memory thereof | |
| Wang et al. | Structure, performance, and application of BiFeO 3 nanomaterials | |
| Assirey | Perovskite synthesis, properties and their related biochemical and industrial application | |
| Chen et al. | High-electromechanical performance for high-power piezoelectric applications: Fundamental, progress, and perspective | |
| Kim et al. | Weak ferromagnetism in the ferroelectric BiFeO 3–ReFeO 3–BaTiO 3 solid solutions (Re= Dy, La) | |
| Haertling | Ferroelectric ceramics: history and technology | |
| CN102157682B (en) | One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode | |
| CN102439724B (en) | Ferro-resistive random access memory (ferro-rram), operation method and manufacturing mehtod thereof | |
| Dong et al. | Engineering the defects and microstructures in ferroelectrics for enhanced/novel properties: an emerging way to cope with energy crisis and environmental pollution | |
| Sun et al. | Lead-free Ba0. 98Ca0. 02Zr0. 02Ti0. 98O3 ceramics with enhanced electrical performance by modifying MnO2 doping content and sintering temperature | |
| CN107275481B (en) | A method of improving Ferro-RRAM switching current ratio | |
| CN101200370A (en) | Ternary system sodium-bismuth titanate lead-free piezoelectric ceramics | |
| Wang et al. | PbTiO 3-based perovskite ferroelectric and multiferroic thin films | |
| CN102051582A (en) | Method for preparing highly (100) oriented BiFeO3 films on Si substrate | |
| CN102593191B (en) | Oxide semiconductor heterostructure modulated by biasing electric field, preparing method and device thereof | |
| Mitoseriu | Magnetoelectric phenomena in single-phase and composite systems | |
| CN101436597A (en) | Ferro-electricity film capacitor for ferro-electric memory and preparation method thereof | |
| Pahuja et al. | Latest advancement in magnetoelectric multiferroic composites | |
| Khirade et al. | Perovskite structured materials: synthesis, structure, physical properties and applications | |
| Winotai et al. | Piezoelectric properties of Fe2O3-doped (1− x) BiScO3–xPbTiO3 ceramics | |
| CN107098701A (en) | Potassium-sodium niobate lithium zirconic acid potassium sodium bismuth scandium acid bismuth ternary series lead-free piezoelectric ceramic | |
| Rani et al. | Study of 0.1 Ni0. 8Zn0. 2Fe2O4− 0.9 Pb1− 3x/2LaxZr0. 65Ti0. 35O3 magnetoelectric composites | |
| CN101697354A (en) | Transparent extended p-n heterojunction thin film and preparation method thereof | |
| Sun et al. | Structure and magnetoelectric property of low-temperature sintering (Ni0. 8Zn0. 1Cu0. 1) Fe2O4/[0.58 PNN-0.02 PZN-0.05 PNW-0.35 PT] composites | |
| Viswanathan et al. | Perovskite Materials an Introduction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140402 Termination date: 20170926 |