CN105762273B - A kind of magnetoelectricity storage unit and preparation method thereof based on double-layer ferro-electricity film - Google Patents

A kind of magnetoelectricity storage unit and preparation method thereof based on double-layer ferro-electricity film Download PDF

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CN105762273B
CN105762273B CN201610119183.8A CN201610119183A CN105762273B CN 105762273 B CN105762273 B CN 105762273B CN 201610119183 A CN201610119183 A CN 201610119183A CN 105762273 B CN105762273 B CN 105762273B
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韩叶梅
王芳
张楷亮
弭伟
曹荣荣
张志超
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Tianjin University of Technology
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Abstract

A kind of magnetoelectricity storage unit based on double-layer ferro-electricity film, Pt/Ti/SiO is sequentially deposited at by double-layer ferro-electricity film and ferromagnetic thin film2Layer structure composition is constituted in/Si compound substrates, double-layer ferro-electricity film is respectively the 0.3Ba (Zr for the perovskite structure being orientated with (111) from bottom to top0.2Ti0.8)O3‑0.7(Ba0.3Ca0.7)TiO3(30BZT 70BCT) and 0.7Ba (Zr0.2Ti0.8)O3‑0.3(Ba0.3Ca0.7)TiO3(70BZT 30BCT), ferromagnetic layer are the Fe being orientated with (110)0.7Ga0.3Alloy firm.It is an advantage of the invention that：The storage unit has non-volatile, has the advantages that low-power consumption, read or write speed are fast, environmentally protective, simple for process, environment compatibility is good, at room temperature with good ferroelectricity, piezoelectricity and ferromagnetic property.

Description

A kind of magnetoelectricity storage unit and preparation method thereof based on double-layer ferro-electricity film
Technical field
The magnetoelectricity storage unit and preparation method thereof based on double-layer ferro-electricity film that the present invention is more particularly directed to a kind of.
Background technology
With the rapid development of information technology, proposing increasingly higher demands to information storage technology.To with high Storage density, low read-write energy consumption, the research and development of the high-performance storage device of high read or write speed have become current scientific research forward position With one of most active field in information technology.In traditional information recording method formula, magnetic recording is easy to the advantage read with it, As the mainstream of present information memory technology；But the difficult limitation and write-in of its storage density are always that magnetic storage technology is faced Problem.In contrast, ferroelectricity record have the characteristics that high storage density and be easy to write-in, but the complexity of reading process with Destructive problem greatly limits its application as memory.For this purpose, the researcher of related field always strives to iron The advantages of two kinds of magnetic, ferroelectricity recording modes, combines and overcomes respective disadvantage, to the relevant new device of informational function, It is constantly explored in terms of new construction and new material；New concept memory related to this is also constantly being designed；And one of them can Capable approach is exactly by magnetoelectric effect (magnetoelectric coupling, ME coupling) and multiferroic material Expect (B.Manuel, et al., Nat.Mater., 2008,7:425；J.F.Scott,Nat.Mater.,2007,6:256- 257)。
Magnetoelectric effect (ME Coupling Effect) refers to that material is generating spontaneous polarization outside plus under magnetic fields And electric field is formed, on the contrary magnetization can also be generated under DC Electric Field.Magnetoelectric material with magnetoelectric effect is more due to it The magneto-electric coupled characteristic of physical field, is not only related to the new problem of physically strong correlation electron system, and there is important science to anticipate Justice；Simultaneously additional degree of freedom is provided in design of the application aspect also for next-generation multifunction electronic device.Based on magnetoelectricity coupling The magnetoelectricity memory (Magnetoelectric Memory, MERAM) for closing effect realizes information ablation process, profit using electric field Readout is realized with magnetic head, integrates the high speed of ferroelectricity write-in, high speed that low energy consumption characteristic and magnetic are read, non-destructive The advantages of ferroelectric random storage (FeRAM) and magnetic memory (MRAM), is combined by the high-performance memory of " autotelegraph/magnetic is read " formula, It may make current memory member speed to improve an order of magnitude or more again and substantially reduce the energy expenditure of information ablation process.
In order to realize that autotelegraph/magnetic reads the application of formula novel information memory device, prodigious electric field regulation and control will be realized first Magnetic effect.The principle that magnetoelectricity memory is designed based on strain mechanism is that wherein ferroelectric layer generates sufficiently large answer under the electric field Become and ferromagnetic layer adjacent thereto can be transferred to.The big iron of ferroelectric phase and magnetostriction coefficient that piezoelectric modulus must be selected big Magnetic mixing ratio mutually appropriate and good interfacial contact are to ensure there is good coupling between two-phase.
Environmental harmony type (1-x) Ba (Zr0.2Ti0.8)O3-x(Ba0.3Ca0.7)TiO3((1-x)BZT-xBCT)(W Liu,et al.,Phy.Rev.Lett.,2009,103:257602) leadless piezoelectric system has huge piezoelectricity similar with lead base piezoelectric property Performance (d33=620pC/N).In addition, in the research of the magnetoelectricity memory cell of ferroelectricity, ferromagnetic thin film structure, " autotelegraph/magnetic The acquisition of reading " state is dependent on piezoelectricity-counter magnetostriction effect between ferroelectricity, ferromagnetic thin film, it is desirable to which two-phase has good Contact interface and selection the good big ferromagnetic layer of ferroelectric layer and magnetostrictive effect of piezoelectric effect；In order to overcome electrode pair The inhibition of ferroelectric domain movement, increases the Strain-coupled between ferroelectric-ferromagnetic, increases measurable electric field regulation and control magneto-resistance effect, Ferroelectric layer is using the 30BZT-70BCT of water chestnut prismatic crystal phase (Rhombohedral, R phase) as tetragonal phase (Tetragonal, T-phase) Double layer structured ferroelectrics of 70BZT-30BCT layers of transition zone, ferromagnetic layer select Fe70Ga30Film (P.Zhao, et al., Appl.Phys.Lett.,2009,94:243507)。
The present invention draws up for a kind of magnetoelectricity storage unit of the ferroelectricity based on magnetoelectric effect/ferromagnetic thin film structure, selects Fe0.7Ga0.3Alloy, as ferroelectric layer, is prepared a kind of with big electroluminescent as ferromagnetic layer, 30BZT-70BCT and 70BZT-30BCT The environmentally friendly magnetoelectricity memory device of magnetoelectric effect, magnetoelectric composite film device according to the present invention is to be put forward for the first time, mesh It is preceding to have no relevant report both at home and abroad.
Invention content
The purpose of the present invention is analyzing in view of the above technology, a kind of magnetoelectricity storage unit based on double-layer ferro-electricity film is provided And preparation method thereof, the storage unit have it is non-volatile, polarization and magnetized state can be kept in applied voltage, due to The change of resistance states can be overturn by the voltage between upper/lower electrode, do not need the generation in the big magnetic field of high current, have The advantages of low-power consumption.
Technical scheme of the present invention：
A kind of magnetoelectricity storage unit based on double-layer ferro-electricity film, is sequentially deposited at by double-layer ferro-electricity film and ferromagnetic thin film Pt/Ti/SiO2Layer structure composition is constituted in/Si compound substrates, the compound substrate is respectively Si, SiO from bottom to top2, Ti and Pt hearth electrodes, the double-layer ferro-electricity film are respectively perovskite structure, the thickness 100- being orientated with (111) from bottom to top 0.3Ba (the Zr of 200nm0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3(30BZT-70BCT) and thickness are 100-200nm's 0.7Ba(Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3(70BZT-30BCT), ferromagnetic layer are to be orientated with (110) Fe0.7Ga0.3Alloy firm.
A kind of preparation method of the magnetoelectricity storage unit based on double-layer ferro-electricity film, by double-layer ferro-electricity film and ferromagnetic Film is deposited on Pt/Ti/SiO with layer structure using radio frequency magnetron sputtering method2It is made on/Si substrates, wherein double-layer ferro-electricity Film is in Pt/Ti/SiO2It is prepared using rf magnetron sputtering on/Si substrates, ferromagnetic thin film is by Fe0.7Ga0.3Alloy target material utilizes Prepared by magnetically controlled DC sputtering, be as follows：
1) by Pt/Ti/SiO2/ Si substrates and 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ceramic target is placed in Sputtering chamber is evacuated to (1-2) × 10-4Pa, then passes to that pressure is 2-2.5Pa, the volume ratio of argon gas and oxygen is 12:8-9 Gaseous mixture, underlayer temperature is 500-700 DEG C, radio-frequency power 50-60w, sputtering time 1.5-4h, after sputtering chamber taking-up It is heat-treated 30 minutes under 700-800 DEG C and air atmosphere, 0.3Ba (Zr is made0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Iron Electroceramics film；
2) 0.3Ba (Zr obtained above0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film and 0.7Ba (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3Target is placed in sputtering chamber, is evacuated to (1-2) × 10-4Pa then passes to pressure The volume ratio for being by force 2Pa, argon gas and oxygen is 12:The gaseous mixture of 8-9, underlayer temperature is 500-700 DEG C, radio-frequency power 50- 60w, sputtering time 1.5-4h are heat-treated 30 minutes after sputtering chamber taking-up under 700-800 DEG C and air atmosphere, are made double Layer ferroelectric ceramic thin film；
3) the double-layer ferro-electricity film of above-mentioned preparation is as substrate and Fe0.7Ga0.3Alloy target material is put into togerther sputtering chamber, takes out true Sky is to (1-2) × 10-4Pa then passes to the argon gas that pressure is 1-1.5Pa, and sputtering power 30-50w, sputtering time are 10-30min takes out from sputtering chamber and the magnetoelectricity storage unit based on double-layer ferro-electricity film is made.
The technology analysis of the present invention：
The magnetoelectricity storage unit of the present invention is changed with the magneto-resistor state of electric field controls Magnetoelectric film medium realizes storage note Recording function, wherein ferroelectric layer are using the 30BZT-70BCT of water chestnut prismatic crystal phase (R phases) as 70BZT-30BCT layers of tetragonal phase (T-phase) Transition zone double layer structured ferroelectrics, increase the Strain-coupled between ferroelectric-ferromagnetic, increase detectable electric field regulation and control magnetoelectricity Inhibition effect, magnetoelectricity memory element of the invention have the advantages that low-power consumption, read or write speed are fast, while environmentally protective, simple for process, Environment compatibility is good.
It is an advantage of the invention that：The storage unit have it is non-volatile, can keep in applied voltage polarizing and magnetize State do not need the big magnetic field of high current since the change of resistance states can be overturn by the voltage between upper/lower electrode Generation, have the advantages that low-power consumption, read or write speed are fast, while environmentally protective, simple for process, the good advantage of environment compatibility； The storage unit can be realized writes direct information data with electric field, using magneto-resistor variation into row information reading；The magnetic It replies by cable and closes thin-film device at room temperature with good ferroelectricity, piezoelectricity and ferromagnetic property, be that 20V is obtained most in applying bias voltage Big electric field controls magneto-resistance effect 7%.
Description of the drawings
Fig. 1 is the laminated construction schematic diagram of magnetoelectricity storage unit prepared by embodiment 1.
Fig. 2 is the XRD diagram of the magnetoelectricity storage unit of the preparation of magnetoelectricity storage unit prepared by embodiment 1.
Fig. 3 is the normalization hysteresis loop figure of magnetoelectricity storage unit prepared by embodiment 1.
Fig. 4 is the piezoelectric effect butterfly curve graph of magnetoelectricity storage unit prepared by embodiment 1.
Fig. 5 is the electroluminescent magneto-resistance effect curve graph under the different bias voltages of magnetoelectricity storage unit prepared by embodiment 1.
Specific implementation mode
Embodiment 1：
A kind of magnetoelectricity storage unit based on double-layer ferro-electricity film, is sequentially deposited at by double-layer ferro-electricity film and ferromagnetic thin film Pt/Ti/SiO2Layer structure composition is constituted in/Si compound substrates, the compound substrate is respectively Si, SiO from bottom to top2, Ti and Pt hearth electrodes, the double-layer ferro-electricity film are respectively perovskite structure, the thickness 100nm being orientated with (111) from bottom to top 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3(30BZT-70BCT) and thickness are the 0.7Ba of 100nm (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3(70BZT-30BCT), ferromagnetic layer are the Fe being orientated with (110)0.7Ga0.3It closes Gold thin film.
The preparation method of the magnetoelectricity storage unit based on double-layer ferro-electricity film, by double-layer ferro-electricity film and ferromagnetic thin film With layer structure Pt/Ti/SiO is deposited on using radio frequency magnetron sputtering method2It is made on/Si substrates, wherein double-layer ferro-electricity film In Pt/Ti/SiO2It is prepared using rf magnetron sputtering on/Si substrates, ferromagnetic thin film is by Fe0.7Ga0.3Alloy target material utilizes direct current Prepared by magnetron sputtering, be as follows：
1) by Pt/Ti/SiO2/ Si substrates and 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ceramic target is placed in Sputtering chamber is evacuated to (1-2) × 10-4Pa, then passes to that pressure is 2-2.5Pa, the volume ratio of argon gas and oxygen is 4：3 it is mixed Gas is closed, underlayer temperature is 500 DEG C, radio-frequency power 50w, sputtering time 2h, in 800 DEG C and air gas after sputtering chamber taking-up It is heat-treated 30 minutes under atmosphere, 0.3Ba (Zr is made0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film；
2) 0.3Ba (Zr obtained above0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film and 0.7Ba (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3Target is placed in sputtering chamber, is evacuated to (1-2) × 10-4Pa then passes to pressure The volume ratio for being by force 2Pa, argon gas and oxygen is 4：3 gaseous mixture, underlayer temperature is 500 DEG C, radio-frequency power 50w, sputtering when Between be 2h, be heat-treated 30 minutes under 800 DEG C and air atmosphere after sputtering chamber taking-up, obtained double-layer ferro-electricity ceramic membrane；
3) the double-layer ferro-electricity film of above-mentioned preparation is as substrate and Fe0.7Ga0.3Alloy target material is put into togerther sputtering chamber, takes out true Sky is to (1-2) × 10-4Pa, then pass to pressure be 1Pa argon gas, sputtering power 50w, sputtering time 15min, from Sputtering chamber, which takes out, is made the magnetoelectricity storage unit based on double-layer ferro-electricity film.
Fig. 1 is the laminated construction schematic diagram of the magnetoelectricity storage unit prepared.
Fig. 2 is the XRD diagram of the magnetoelectricity storage unit of the preparation of the magnetoelectricity storage unit prepared.It is visible in figure：Film is by calcium Titanium ore phase 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3(111)、0.7Ba(Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7) TiO3(111) and Fe0.7Ga0.3(110) two phase composition of phase.
Fig. 3 is the normalization hysteresis loop figure of the magnetoelectricity storage unit prepared.Show in figure：(summary conclusion).
Fig. 4 is the piezoelectric effect butterfly curve graph of the magnetoelectricity storage unit prepared.Show in figure：(summary conclusion).
Fig. 5 is the electroluminescent magneto-resistance effect curve graph under the different bias voltages of the magnetoelectricity storage unit prepared.It can in figure Seem at room temperature not only with ferroelectricity but also with ferromagnetism, and have larger electroluminescent magneto-resistance effect.
Embodiment 2：
A kind of magnetoelectricity storage unit based on double-layer ferro-electricity film, is sequentially deposited at by double-layer ferro-electricity film and ferromagnetic thin film Pt/Ti/SiO2Layer structure composition is constituted in/Si compound substrates, the compound substrate is respectively Si, SiO from bottom to top2, Ti and Pt hearth electrodes, the double-layer ferro-electricity film are respectively perovskite structure, the thickness 150nm being orientated with (111) from bottom to top 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3(30BZT-70BCT) and thickness are the 0.7Ba of 150nm (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3(70BZT-30BCT), ferromagnetic layer are the Fe being orientated with (110)0.7Ga0.3It closes Gold thin film.
The preparation method of the magnetoelectricity storage unit based on double-layer ferro-electricity film, by double-layer ferro-electricity film and ferromagnetic thin film With layer structure Pt/Ti/SiO is deposited on using radio frequency magnetron sputtering method2It is made on/Si substrates, wherein double-layer ferro-electricity film In Pt/Ti/SiO2It is prepared using rf magnetron sputtering on/Si substrates, ferromagnetic thin film is by Fe0.7Ga0.3Alloy target material utilizes direct current Prepared by magnetron sputtering, be as follows：
1) by Pt/Ti/SiO2/ Si substrates and 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ceramic target is placed in Sputtering chamber is evacuated to (1-2) × 10-4Pa, then passes to that pressure is 2Pa, the volume ratio of argon gas and oxygen is 3:2 mixing Gas, underlayer temperature is 500 DEG C, radio-frequency power 60w, sputtering time 2.5h, in 800 DEG C and air gas after sputtering chamber taking-up It is heat-treated 30 minutes under atmosphere, 0.3Ba (Zr is made0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film；
2) 0.3Ba (Zr obtained above0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film and 0.7Ba (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3Target is placed in sputtering chamber, is evacuated to (1-2) × 10-4Pa then passes to pressure The volume ratio for being by force 2Pa, argon gas and oxygen is 3:2 gaseous mixture, underlayer temperature is 500 DEG C, radio-frequency power 60w, sputtering when Between be 2.5h, be heat-treated 30 minutes under 800 DEG C and air atmosphere after sputtering chamber taking-up, obtained double-layer ferro-electricity ceramic membrane；
3) the double-layer ferro-electricity film of above-mentioned preparation is as substrate and Fe0.7Ga0.3Alloy target material is put into togerther sputtering chamber, takes out true Sky is to (1-2) × 10-4Pa, then pass to pressure be 1Pa argon gas, sputtering power 50w, sputtering time 20min, from Sputtering chamber, which takes out, is made the magnetoelectricity storage unit based on double-layer ferro-electricity film.
The testing result and embodiment 1 of the magnetoelectricity storage unit of the double-layer ferro-electricity film of preparation are similar.
Embodiment 3：
A kind of magnetoelectricity storage unit based on double-layer ferro-electricity film, is sequentially deposited at by double-layer ferro-electricity film and ferromagnetic thin film Pt/Ti/SiO2Layer structure composition is constituted in/Si compound substrates, the compound substrate is respectively Si, SiO from bottom to top2, Ti and Pt hearth electrodes, the double-layer ferro-electricity film are respectively perovskite structure, the thickness 100nm being orientated with (111) from bottom to top 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3(30BZT-70BCT) and thickness are the 0.7Ba of 150nm (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3(70BZT-30BCT), ferromagnetic layer are the Fe being orientated with (110)0.7Ga0.3It closes Gold thin film.
The preparation method of the magnetoelectricity storage unit based on double-layer ferro-electricity film, by double-layer ferro-electricity film and ferromagnetic thin film With layer structure Pt/Ti/SiO is deposited on using radio frequency magnetron sputtering method2It is made on/Si substrates, wherein double-layer ferro-electricity film In Pt/Ti/SiO2It is prepared using rf magnetron sputtering on/Si substrates, ferromagnetic thin film is by Fe0.7Ga0.3Alloy target material utilizes direct current Prepared by magnetron sputtering, be as follows：
1) by Pt/Ti/SiO2/ Si substrates and 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ceramic target is placed in Sputtering chamber is evacuated to (1-2) × 10-4Pa, then passes to that pressure is 2-2.5Pa, the volume ratio of argon gas and oxygen is 4:3 it is mixed Gas is closed, underlayer temperature is 500 DEG C, radio-frequency power 50w, sputtering time 2h, in 750 DEG C and air gas after sputtering chamber taking-up It is heat-treated 30 minutes under atmosphere, 0.3Ba (Zr is made0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film；
2) 0.3Ba (Zr obtained above0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film and 0.7Ba (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3Target is placed in sputtering chamber, is evacuated to (1-2) × 10-4Pa then passes to pressure The volume ratio for being by force 2Pa, argon gas and oxygen is 4:3 gaseous mixture, underlayer temperature is 500 DEG C, radio-frequency power 60w, sputtering when Between be 2.5h, be heat-treated 30 minutes under 750 DEG C and air atmosphere after sputtering chamber taking-up, obtained double-layer ferro-electricity ceramic membrane；
3) the double-layer ferro-electricity film of above-mentioned preparation is as substrate and Fe0.7Ga0.3Alloy target material is put into togerther sputtering chamber, takes out true Sky is to (1-2) × 10-4Pa, then pass to pressure be 1Pa argon gas, sputtering power 50w, sputtering time 15min, from Sputtering chamber, which takes out, is made the magnetoelectricity storage unit based on double-layer ferro-electricity film.
The testing result and embodiment 1 of the magnetoelectricity storage unit of the double-layer ferro-electricity film of preparation are similar.
Embodiment 4：
A kind of magnetoelectricity storage unit based on double-layer ferro-electricity film, is sequentially deposited at by double-layer ferro-electricity film and ferromagnetic thin film Pt/Ti/SiO2Layer structure composition is constituted in/Si compound substrates, the compound substrate is respectively Si, SiO from bottom to top2, Ti and Pt hearth electrodes, the double-layer ferro-electricity film are respectively perovskite structure, the thickness 200nm being orientated with (111) from bottom to top 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3(30BZT-70BCT) and thickness are the 0.7Ba of 200nm (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3(70BZT-30BCT), ferromagnetic layer are the Fe being orientated with (110)0.7Ga0.3It closes Gold thin film.
The preparation method of the magnetoelectricity storage unit based on double-layer ferro-electricity film, by double-layer ferro-electricity film and ferromagnetic thin film With layer structure Pt/Ti/SiO is deposited on using radio frequency magnetron sputtering method2It is made on/Si substrates, wherein double-layer ferro-electricity film In Pt/Ti/SiO2It is prepared using rf magnetron sputtering on/Si substrates, ferromagnetic thin film is by Fe0.7Ga0.3Alloy target material utilizes direct current Prepared by magnetron sputtering, be as follows：
1) by Pt/Ti/SiO2/ Si substrates and 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ceramic target is placed in Sputtering chamber is evacuated to (1-2) × 10-4Pa, then passes to that pressure is 2Pa, the volume ratio of argon gas and oxygen is 4:3 mixing Gas, underlayer temperature is 600 DEG C, radio-frequency power 50w, sputtering time 4h, in 800 DEG C and air atmosphere after sputtering chamber taking-up Lower heat treatment 30 minutes, is made 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film；
2) 0.3Ba (Zr obtained above0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film and 0.7Ba (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3Target is placed in sputtering chamber, is evacuated to (1-2) × 10-4Pa then passes to pressure The volume ratio for being by force 2Pa, argon gas and oxygen is 4:3 gaseous mixture, underlayer temperature is 600 DEG C, radio-frequency power 50w, sputtering when Between be 4h, be heat-treated 30 minutes under 800 DEG C and air atmosphere after sputtering chamber taking-up, obtained double-layer ferro-electricity ceramic membrane；
3) the double-layer ferro-electricity film of above-mentioned preparation is as substrate and Fe0.7Ga0.3Alloy target material is put into togerther sputtering chamber, takes out true Sky is to (1-2) × 10-4Pa, then pass to pressure be 1Pa argon gas, sputtering power 50w, sputtering time 30min, from Sputtering chamber, which takes out, is made the magnetoelectricity storage unit based on double-layer ferro-electricity film.
The testing result and embodiment 1 of the magnetoelectricity storage unit of the double-layer ferro-electricity film of preparation are similar.

Claims (2)

1. a kind of magnetoelectricity storage unit based on double-layer ferro-electricity film, it is characterised in that：By double-layer ferro-electricity film and ferromagnetic thin film It is sequentially deposited at Pt/Ti/SiO2Layer structure composition is constituted in/Si compound substrates, the compound substrate is respectively from bottom to top Si, SiO2, Ti and Pt hearth electrodes, the double-layer ferro-electricity film from bottom to top be respectively with (111) be orientated perovskite structure, Thickness is the 0.3Ba (Zr of 100-200nm0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3(30BZT-70BCT) and thickness are 100- 0.7Ba (the Zr of 200nm0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3(70BZT-30BCT), ferromagnetic layer are to be orientated with (110) Fe0.7Ga0.3Alloy firm.
2. a kind of preparation method of the magnetoelectricity storage unit based on double-layer ferro-electricity film as described in claim 1, it is characterised in that： Pt/Ti/SiO is deposited on using radio frequency magnetron sputtering method with layer structure by double-layer ferro-electricity film and ferromagnetic thin film2/ Si substrates Upper to be made, wherein double-layer ferro-electricity film is in Pt/Ti/SiO2On/Si substrates using rf magnetron sputtering prepare, ferromagnetic thin film by Fe0.7Ga0.3Alloy target material is prepared using magnetically controlled DC sputtering, is as follows：
1) by Pt/Ti/SiO2/ Si substrates and 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ceramic target merging sputtering Room is evacuated to (1-2) × 10-4Pa, then passes to that pressure is 2-2.5Pa, the volume ratio of argon gas and oxygen is 12:8-9's is mixed Close gas, underlayer temperature is 500-700 DEG C, radio-frequency power 50-60w, sputtering time 1.5-4h, after sputtering chamber taking-up Be heat-treated 30 minutes under 700-800 DEG C and air atmosphere, obtained 0.3Ba (Zr0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectricity Ceramic membrane；
2) 0.3Ba (Zr obtained above0.2Ti0.8)O3-0.7(Ba0.3Ca0.7)TiO3Ferroelectric ceramic thin film and 0.7Ba (Zr0.2Ti0.8)O3-0.3(Ba0.3Ca0.7)TiO3Target is placed in sputtering chamber, is evacuated to (1-2) × 10-4Pa then passes to pressure The volume ratio for being by force 2Pa, argon gas and oxygen is 12:The gaseous mixture of 8-9, underlayer temperature is 500-700 DEG C, radio-frequency power 50- 60w, sputtering time 1.5-4h are heat-treated 30 minutes after sputtering chamber taking-up under 700-800 DEG C and air atmosphere, are made double Layer ferroelectric ceramic thin film；
3) the double-layer ferro-electricity film of above-mentioned preparation is as substrate and Fe0.7Ga0.3Alloy target material is put into togerther sputtering chamber, is evacuated to (1-2)×10-4Pa then passes to the argon gas that pressure is 1-1.5Pa, sputtering power 30-50w, sputtering time 10- 30min takes out from sputtering chamber and the magnetoelectricity storage unit based on double-layer ferro-electricity film is made.
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