CN109215705B - Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage - Google Patents
Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage Download PDFInfo
- Publication number
- CN109215705B CN109215705B CN201811060814.9A CN201811060814A CN109215705B CN 109215705 B CN109215705 B CN 109215705B CN 201811060814 A CN201811060814 A CN 201811060814A CN 109215705 B CN109215705 B CN 109215705B
- Authority
- CN
- China
- Prior art keywords
- magnetic
- domain
- film
- magnetic field
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000013500 data storage Methods 0.000 title claims abstract description 14
- 239000002356 single layer Substances 0.000 title claims abstract description 12
- 230000005291 magnetic effect Effects 0.000 claims abstract description 164
- 239000010408 film Substances 0.000 claims description 61
- 230000005381 magnetic domain Effects 0.000 claims description 39
- 238000005259 measurement Methods 0.000 claims description 11
- 230000005355 Hall effect Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 230000002159 abnormal effect Effects 0.000 claims description 7
- 230000005415 magnetization Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000005374 Kerr effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910003321 CoFe Inorganic materials 0.000 claims description 2
- 229910019236 CoFeB Inorganic materials 0.000 claims description 2
- 229910018936 CoPd Inorganic materials 0.000 claims description 2
- 229910018979 CoPt Inorganic materials 0.000 claims description 2
- 229910015372 FeAl Inorganic materials 0.000 claims description 2
- 229910005347 FeSi Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 229910018279 LaSrMnO Inorganic materials 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 description 8
- 239000000696 magnetic material Substances 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention relates to a method for controlling a multi-domain structure of a ferromagnetic single-layer film to realize ten-state data storage, which comprises the following steps: (1) applying a sufficiently large negative saturation magnetic field to the multi-domain magnetic film to enable the multi-domain magnetic film to be in a single-domain state; (2) applying a forward writing magnetic field to the multi-domain magnetic film operated in the step (1), and writing the magnetic film into different multi-domain states by changing the strength of the writing magnetic field, wherein each multi-domain state is used as an independent storage unit; the invention can directly store ten values of 0,1,2,3,4,5,6,7,8 and 9 in one physical storage unit, so as to be different from the traditional technology that only 0 and 1 can be stored in one physical storage unit at present, has wide application prospect in the aspect of high-density and low-power consumption magnetic electronic storage devices, and is also beneficial to developing a computer directly utilizing decimal operation. The invention has the advantages of strong universality, easy operation and room-temperature working.
Description
Technical Field
The invention relates to a method for controlling a multi-domain structure of a ferromagnetic single-layer film to realize ten-state data storage, belonging to the field of data storage of information technology.
Background
The development of magnetic materials and science and technology are closely linked, and the magnetic materials do not make contributions from ancient compasses, modern hard disks and hard disk reading heads and novel magnetic random access memory devices. For example: the magnetic storage function in hard disks is to record "0" and "1" based on two significantly different magnetic states of the magnetic material; in a magnetic tunnel junction, "0" and "1" are represented by parallel and antiparallel alignments of the magnetic moments of the free and pinned layers, resulting in a tunnel junction having two resistance states, high and low. Also because of the ease of realisation of two different magnetic or resistive states, computers today are based on binary. However, with the rapid development of information technology, the demand for high storage density and low power consumption of devices is more and more urgent. This requires that we not only take full advantage of existing materials or devices, but also find new properties in existing material or device structures. If a stable ten-fold magnetic and resistive state can be given experimentally, a decimal-based computer can be developed, which not only can greatly improve the storage density, but also can promote the rapid development of artificial intelligence and brain-like computation.
However, magnetic thin films have been used for binary storage only, or as an integral part of functional devices to assist multi-state storage, and have not been used directly as carriers of multi-state magnetic and resistance states themselves.
Chinese patent document CN103824588A discloses a method for regulating magnetic multi-domain state, which is to apply a magnetic field intensity of 0 to 4 x 10 while passing current through a magnetic film5The magnetization state of the magnetic film is regulated and controlled by an A/m external magnetic field, wherein current is used for pushing a magnetic domain in a magnetic multi-domain state of the magnetic film to move, and the external magnetic field is used for regulating and controlling the generation of a new magnetic domain in the magnetic film and the state of an existing magnetic domain in the moving process, so that the magnetic film is in a stable magnetic multi-domain state. However, this patent suffers from the following drawbacks or deficiencies: firstly, the magnetic domain can be effectively regulated by simultaneously applying current and external magnetic field, and when the current density is less than 1 × 104A/cm2The regulation and control of time-external magnetic field and current has certain hysteresis effect; second, external magnetic fields are achieved by growing ferromagnetic layers or placing permanent magnets near magnetic films, or by means of current-generated Oersted fields and moving heads in conventional hard disks, usually only weaker magnetic fields (S) ((S))<1 tesla); third, the detection of the magnetic domain state utilizes only the hall effect.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method for controlling a multi-domain structure of a ferromagnetic single-layer film to realize ten-state data storage;
the invention is expected to have wide application prospect in the aspect of high-density and low-power consumption magnetoelectronic memory devices.
Interpretation of terms:
1. the multi-domain magnetic thin film means that the magnetic thin film includes a large number of small magnetized regions having different directions, each of the small magnetized regions includes a large number of atoms, and magnetic moments of all the atoms are arranged in parallel in a certain direction, and the small magnetized regions are called magnetic domains. The atomic magnetic moments between adjacent magnetic domains are arranged in different directions.
2. A single domain (single domain) state is a magnetic state in which when the dimension of a magnetic material is smaller than a critical value, the original magnetic domain structure disappears and all magnetic moments are arranged in parallel only along a certain direction.
3. Ten states, which are ten remanent magnetic states or resistance states;
4. no overshot mode, the applied magnetic field does not exceed the applied field mode of the target magnetic field at any time until the target magnetic field is reached.
The technical scheme of the invention is as follows:
a method of controlling a multi-domain structure of a ferromagnetic single layer film to achieve ten-state data storage, comprising:
(1) applying a magnetic field (the applicable magnetic field range is +/-7 Tesla) which is larger than the saturation magnetic field of the multi-domain magnetic film in the direction of the negative magnetic field to make the multi-domain magnetic film in a single-domain state; a uniform initial state is provided for data storage.
Further preferably, in the step (1), a magnetic field larger than the saturation magnetic field of the multi-domain magnetic thin film is applied in the negative magnetic field direction by using a superconducting quantum interferometer magnetometer.
(2) Applying a positive magnetic field to the multi-domain magnetic film operated in the step (1), and increasing an external magnetic field to a target magnetic field (writing magnetic field) at an increasing rate of 0-200 oersteds/second through a No overshot mode to obtain a certain multi-domain state;
(3) changing the size of the target magnetic field, and executing the steps (1) to (2) to obtain another multi-magnetic-domain state; repeating the step (3) until ten multi-magnetic domain states are obtained;
the magnetic thin film is "written" to different multi-domain states by controlling the magnitude of the target magnetic field, affecting the number, size and direction of the magnetic domains. As the target magnetic field increases, more and more magnetic moments are aligned along the target magnetic field direction, resulting in an increase in the number of domains or regions aligned in the same direction as the target magnetic field, and a decrease in the number of domains or alignment in a direction opposite to the alignment of the magnetic moments of the target magnetic field toward the target magnetic field direction. Each multi-domain state acts as an independent memory cell; different multi-magnetic domain states can be read out through magnetism measurement such as residual magnetization, magneto-optical Kerr effect and the like, and can also be read out through electric transport characteristics such as abnormal Hall effect, magnetoresistance and the like.
(4) And (4) reading the ten multi-magnetic-domain states obtained in the step (3).
In the multi-domain magnetic film, the invention changes the quantity, the size and the direction of magnetic domains through an external magnetic field, thereby obtaining ten stable residual magnetic states or resistance states in the magnetic film, and realizing the direct storage of ten values of 0,1,2,3,4,5,6,7,8 and 9 in one physical storage unit, so as to be different from the traditional technology that only two values of 0 and 1 can be stored in one physical storage unit at present.
Preferably, according to the present invention, the step (4) includes: different multi-domain states are read out by residual magnetization or magneto-optical kerr effect magnetic measurement, or by abnormal hall effect or magneto-resistive electric transport property measurement.
According to a preferred embodiment of the invention, the desired multi-domain magnetic films are produced by magnetron sputtering, pulsed laser deposition, molecular beam epitaxy or electron beam evaporation.
According to the invention, the material of the multi-domain magnetic film is a ferromagnetic metal film, a ferromagnetic semiconductor film or a rare earth metal ferromagnetic film; the ferromagnetic metal film is made of Fe, Co, Ni, CoPt, CoPd, NiFe, CoFe, CoFeB, FeSi, FeSiAl or FeAl; the ferromagnetic semiconductor film is made of GaMnAs, InMnAs or CoZnO; the material of the rare earth metal ferromagnetic film is LaSrMnO or LaCaMnO.
The invention has the beneficial effects that:
1. the invention provides a method for obtaining ten stable remanent magnetic states or resistance states in a magnetic film, which can directly store ten values of 0,1,2,3,4,5,6,7,8 and 9 in one physical storage unit so as to be different from the traditional technology that only 0 and 1 values can be stored in one physical storage unit at present, has wide application prospect in the aspect of high-density and low-power-consumption magnetoelectronic storage devices, and is favorable for developing a computer directly utilizing decimal operation.
2. The invention has the advantages of strong universality, easy operation and room-temperature working.
3. The invention can realize up to 10 stable magnetic and resistance states only by controlling an applied external magnetic field (+ -7 Tesla) through the superconducting magnet without the assistance of current, and different magnetic and resistance states can be measured by an abnormal Hall effect and can also be read out through magnetic measurement and magneto-optical performance measurement.
Drawings
FIG. 1 is [ Co/Pt ]]5The magnetic film gradually increases the hysteresis loop of the write field.
FIG. 2 is [ Co/Pt ]]5The magnetic film shows the curve of the abnormal Hall effect when the writing magnetic field is gradually increased.
FIG. 3(a) shows [ Co/Pt ]]15The magnetic thin film gradually increases the magnetic domain image in the first remanence state after the magnetic field is written.
FIG. 3(b) is [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the second remanent state after the magnetic field is written.
FIG. 3(c) shows [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the third remanent state after the magnetic field is written.
FIG. 3(d) is [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the fourth remanence state after the magnetic field is written.
FIG. 3(e) is [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the fifth remanence state after the magnetic field is written.
FIG. 3(f) is [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the sixth remanence state after the magnetic field is written.
FIG. 3(g) is [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the seventh remanence state after the magnetic field is written.
FIG. 3(h) shows [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the eighth remanence state after the magnetic field is written.
FIG. 3(i) is [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the ninth remanence state after the magnetic field is written.
FIG. 3(j) is [ Co/Pt ]]15The magnetic film gradually increases the magnetic domain image in the tenth remanent state after the magnetic field is written.
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Examples
A method for controlling a multi-domain structure of a ferromagnetic single-layer film to realize ten-state data storage comprises the following steps:
(1) sputtering Ta (1nm)/Pt (6nm)/[ Pt0.3nm/Co0.5nm in this order on a (001) -oriented Si substrate with a magnetron sputtering apparatus]na/Ta (3nm) in which the growth rates of Pt and Co are each per second
And
and (3) preparing a Hall effect test structure with the width of 10 micrometers and the length of 70 micrometers by combining photoetching and ion etching for measuring the abnormal Hall effect.
(2)[Co/Pt]5In the thin film, the magnetic domain state is regulated and controlled through an external magnetic field, the thin film is written into ten different magnetic states, and the method comprises the following steps:
A. applying a magnetic field of-1500 oersted in the direction of the negative magnetic field by using a magnetometer of the superconducting quantum interferometer, and arranging all magnetic moments in the direction of the negative magnetic field; at this time, [ Co/Pt ] as a whole]5The film is in a monodomain state.
B. For the [ Co/Pt after the operation of the step (1)]5The film is applied with a forward magnetic field, and the write magnetic field is changed between 615 oersted and 670 oersted at an increasing rate of 0-200 oersted/second by a No overshot mode, thereby obtaining a hysteresis loop of 0-9 shown in FIG. 2. Is straightVisual detection of the magnetic domain state, for [ Co/Pt ]]15The film was subjected to the magnetic writing process of steps a-B and the magnetic domain images in the remanent state after different "writing" processes were measured. The initial negative saturation field during this process is-1000 oersted and the write field range is 676 oersted to 850 oersted. The specific situation is as follows: increasing the external magnetic field to 676 oersteds (write field) to obtain a first magnetic state; the corresponding magnetic domain image is shown in fig. 3 (a);
C. changing the write magnetic field to 701 oersted, and executing the steps A-B to obtain a second magnetic state; the corresponding magnetic domain image is shown in fig. 3 (b);
changing the write magnetic field to 703 oersted, and executing the steps A-B to obtain a third magnetic state; its corresponding magnetic domain image is shown in fig. 3 (c);
changing the write magnetic field to 704 oersted, and executing the steps A-B to obtain a fourth magnetic state; the corresponding magnetic domain image is shown in fig. 3 (d);
changing the write magnetic field to 707 oersted, and executing the steps A-B to obtain a fifth magnetic state; the corresponding magnetic domain image is shown in fig. 3 (e);
changing the write magnetic field to 720 oersted, and executing the steps A-B to obtain a sixth magnetic state; the corresponding magnetic domain image is shown in fig. 3 (f);
changing the write magnetic field to 726 oersted, and executing the steps A-B to obtain a seventh magnetic state; the corresponding magnetic domain image is shown in fig. 3 (g);
changing the writing magnetic field to 750 oersted, and executing the steps A-B to obtain an eighth magnetic state; the corresponding magnetic domain image is shown in fig. 3 (h);
changing the write magnetic field to 775 oersted, and executing the steps A-B to obtain a ninth magnetic state; the corresponding magnetic domain image is shown in fig. 3 (i);
changing the magnetic field to 850 Oersted, and executing the steps A-B to obtain the tenth magnetic state; its corresponding magnetic domain image is shown in fig. 3 (j);
gradually increasing the write field to change the number, size and direction of magnetic domains and induce the magnetic film to different valuesA multi-magnetic domain state; and a hysteresis loop between the negative saturation field and the "write" field is measured with a superconducting quantum interferometer. [ Co/Pt ]]5The hysteresis loops when the magnetic film gradually increases the write field are shown in fig. 1, and experiments show that when the write field is between 615 oersted and 670 oersted, the film hysteresis loops are obviously different, and decimal 0-9 can be obtained by using the residual magnetization as the record carrier of information.
The abnormal Hall effect, the magnetoresistance and the magnetization intensity in the magnetic material are closely related, so that the different magnetic states of the sample can be detected by using simpler electric transport measurement. FIG. 2 shows [ Co/Pt ]]5Anomalous hall effect measurements of the films during different "magnetic writing" processes. It can be seen that the hall voltage is also significantly different at different remanence states, and the remanence is proportional to the hall voltage. Therefore, different remanence states can be well read by using the Hall voltage, and ten values can be directly stored in one physical storage unit by using the Hall voltage as an information recording carrier.
The magneto-optical kerr effect measurements of fig. 3(a) -3 (j) show the distribution of the magnetic domains in the remanent state in the magnetic film and their evolution with the external field after different "magnetic writing" processes. To improve the signal-to-noise ratio, the measurement used [ Co/Pt ] repeated for 15 cycles]15A film. In the test process, the initial saturation field is-1000 oersted, and then the magnetic domain distribution in the remanence state is measured after the writing magnetic field is increased monotonously. The gray (black) areas in the figure represent the magnetic moments in the negative (positive) direction of the magnetic field. As can be seen from fig. 3(a) -3 (j), the magnetic domain distribution can be well controlled by the external magnetic field, the magnetic film can be "written" to different remanence states, and the remanence state can also be "read" intuitively by the magneto-optical effect. The area ratio of domains with different orientations can be used as information recording carrier to realize that one physical storage unit directly stores ten values.
Claims (5)
1. A method for controlling a multi-domain structure of a ferromagnetic single layer film to achieve ten-state data storage, comprising:
(1) applying a magnetic field larger than the saturation magnetic field of the multi-domain magnetic film in the direction of the negative magnetic field to make the multi-domain magnetic film in a single-domain state;
(2) applying a positive direction magnetic field to the multi-domain magnetic film operated in the step (1), and increasing an external magnetic field to a target magnetic field at an increasing rate of 0-200 oersted/second through a No overshot mode to obtain a certain multi-domain state;
(3) changing the size of the target magnetic field, and executing the steps (1) to (2) to obtain another multi-magnetic-domain state; namely: obtaining a stable magnetic domain state by changing the magnitude of the applied writing magnetic field, thereby establishing the one-to-one correspondence relationship between different magnetic domain states and different writing fields to perform magnetic writing and magnetic reading;
(4) and (4) reading the ten multi-magnetic-domain states obtained in the step (3).
2. The method for controlling the multi-domain structure of the ferromagnetic single-layer film to realize ten-state data storage according to claim 1, wherein in the step (1), a magnetic field larger than the saturation magnetic field of the multi-domain magnetic thin film is applied in the negative magnetic field direction by using a superconducting quantum interferometer magnetometer.
3. The method for controlling the multi-domain structure of the ferromagnetic single-layer film to realize ten-state data storage according to claim 1, wherein the step (4) comprises: different multi-domain states are read out by residual magnetization or magneto-optical kerr effect magnetic measurement, or by abnormal hall effect or magneto-resistive electric transport property measurement.
4. The method for controlling the multi-domain structure of the ferromagnetic single-layer film to realize ten-state data storage according to claim 1, wherein the desired multi-domain magnetic thin film is prepared by magnetron sputtering, pulsed laser deposition, molecular beam epitaxy or electron beam evaporation.
5. The method for controlling the multi-domain structure of the ferromagnetic single-layer film to realize ten-state data storage according to any one of claims 1 to 4, wherein the material of the multi-domain magnetic film is a ferromagnetic metal film, a ferromagnetic semiconductor film or a rare earth metal ferromagnetic film; the ferromagnetic metal film is made of Fe, Co, Ni, CoPt, CoPd, NiFe, CoFe, CoFeB, FeSi, FeSiAl or FeAl; the ferromagnetic semiconductor film is made of GaMnAs, InMnAs or CoZnO; the material of the rare earth metal ferromagnetic film is LaSrMnO or LaCaMnO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811060814.9A CN109215705B (en) | 2018-09-12 | 2018-09-12 | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811060814.9A CN109215705B (en) | 2018-09-12 | 2018-09-12 | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109215705A CN109215705A (en) | 2019-01-15 |
| CN109215705B true CN109215705B (en) | 2021-08-20 |
Family
ID=64983908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811060814.9A Expired - Fee Related CN109215705B (en) | 2018-09-12 | 2018-09-12 | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109215705B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190183B (en) * | 2019-04-24 | 2021-01-01 | 中国科学院金属研究所 | High Fe-doped Fe with abnormal Hall effect1+yPreparation method of Te single crystal film |
| CN113889151B (en) * | 2021-10-21 | 2023-05-26 | 郑州云海信息技术有限公司 | Mechanical hard disk data reading and writing method and system based on ferromagnetic material |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995030986A1 (en) * | 1994-05-10 | 1995-11-16 | Hitachi Maxell, Ltd. | Magnetooptical recording medium, and method and apparatus for recording/reproduction |
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| CN1997515A (en) * | 2004-07-13 | 2007-07-11 | 加利福尼亚大学董事会 | Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage |
| US7399539B2 (en) * | 2003-12-15 | 2008-07-15 | Canon Kabushiki Kaisha | DWDD-type magneto-optic recording medium including buffer regions between recording track regions and method of producing the same |
| WO2012076871A1 (en) * | 2010-12-07 | 2012-06-14 | Cambridge Enterprise Limited | Magnectic structure |
| CN102768854A (en) * | 2012-06-21 | 2012-11-07 | 北京有色金属研究总院 | Magnetoelectric composite multi-state memory unit and preparation method thereof |
| CN103824588A (en) * | 2014-03-12 | 2014-05-28 | 中国科学院微电子研究所 | Method for regulating and controlling magnetic multi-domain state |
| CN105161616A (en) * | 2015-09-21 | 2015-12-16 | 山西师范大学 | Multi-resistance state memristor regulated together by electric field and magnetic field and manufacturing method thereof |
-
2018
- 2018-09-12 CN CN201811060814.9A patent/CN109215705B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995030986A1 (en) * | 1994-05-10 | 1995-11-16 | Hitachi Maxell, Ltd. | Magnetooptical recording medium, and method and apparatus for recording/reproduction |
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| US7399539B2 (en) * | 2003-12-15 | 2008-07-15 | Canon Kabushiki Kaisha | DWDD-type magneto-optic recording medium including buffer regions between recording track regions and method of producing the same |
| CN1997515A (en) * | 2004-07-13 | 2007-07-11 | 加利福尼亚大学董事会 | Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage |
| WO2012076871A1 (en) * | 2010-12-07 | 2012-06-14 | Cambridge Enterprise Limited | Magnectic structure |
| CN102768854A (en) * | 2012-06-21 | 2012-11-07 | 北京有色金属研究总院 | Magnetoelectric composite multi-state memory unit and preparation method thereof |
| CN103824588A (en) * | 2014-03-12 | 2014-05-28 | 中国科学院微电子研究所 | Method for regulating and controlling magnetic multi-domain state |
| CN105161616A (en) * | 2015-09-21 | 2015-12-16 | 山西师范大学 | Multi-resistance state memristor regulated together by electric field and magnetic field and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| <Magnetic Domain-Wall Racetrack Memory>;S. S. P. Parkin, M. Hayashi, L. Thomas;<Science>;20180411;第320卷(第5873期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109215705A (en) | 2019-01-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kumar et al. | Domain wall memory: Physics, materials, and devices | |
| US7573737B2 (en) | High speed low power magnetic devices based on current induced spin-momentum transfer | |
| US9449668B2 (en) | Current induced spin-momentum transfer stack with dual insulating layers | |
| US7307876B2 (en) | High speed low power annular magnetic devices based on current induced spin-momentum transfer | |
| US7095646B2 (en) | Multi-state magnetoresistance random access cell with improved memory storage density | |
| US10991874B2 (en) | Magneto-ionic device with a solid state proton pump and methods for using the same | |
| US8154957B1 (en) | Magneto-optical device with an optically induced magnetization | |
| EP2903020B1 (en) | Storage element, storage device, and magnetic head | |
| JP2006253637A (en) | MAGNETIC TUNNEL JUNCTION COMPRISING AMORPHOUS CoFeSiB OR AMORPHOUS NiFeSiB FREE LAYER | |
| CN109215705B (en) | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage | |
| Gautam | Spintronics-A new hope for the digital world | |
| CN113488584A (en) | FePt material-based magnetization switching device, external magnetic field-free switching method and application | |
| Baek et al. | Novel operation of a multi-bit SOT memory cell addressed with a single write line | |
| Tao et al. | Magnetization Switching by Spin–Orbit Torque in L1 0-FePt and Ta/FePt Films With Large Perpendicular Magnetic Anisotropy | |
| Krishnia | Current-driven domain wall dynamics in coupled ferromagnetic structures | |
| Funabashi et al. | Magneto-optical observation of CPP-GMR device with perpendicular magnetic anisotropy driven by spin transfer switching using transparent top electrode | |
| Thomas | Preparation and characterisation of magnetic single and double barrier junctions | |
| US20230148297A1 (en) | Magnetic heterojunction structure and method for controlling and achieving logic and multiple-state storage functions | |
| CN109243511B (en) | Method for controlling free layer domain structure to realize ten-state data storage in magnetic tunnel junction | |
| Feng | Effects of oxidation on the spin-orbit torques and skyrmionic textures in ultrathin Pt/Co/AlOx heterostructures | |
| Wong | Enhanced spin-orbit torque (SOT) and spin accumulation quantification in perpendicularly magnetised systems | |
| JPH11353868A (en) | Magnetic thin film memory device and method for manufacturing the same, and apparatus for manufacturing the same | |
| Liu et al. | Imaging magnetization switching induced by spin-orbit torque in perpendicularly magnetized Ta/CoFeB structure | |
| Tadisina | Perpendicular magnetic anisotropy materials for reduced current switching devices | |
| Abugri | Switching studies of perpendicular magnetic anisotropy materials and magnetic tunnel junctions |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210820 |