CN109215705A - A method of the multidomain structure controlling ferromagnetic monofilm realizes the storage of ten state data - Google Patents
A method of the multidomain structure controlling ferromagnetic monofilm realizes the storage of ten state data Download PDFInfo
- Publication number
- CN109215705A CN109215705A CN201811060814.9A CN201811060814A CN109215705A CN 109215705 A CN109215705 A CN 109215705A CN 201811060814 A CN201811060814 A CN 201811060814A CN 109215705 A CN109215705 A CN 109215705A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- magnetic field
- multidomain
- film
- domain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000003860 storage Methods 0.000 title claims abstract description 20
- 230000005291 magnetic effect Effects 0.000 claims abstract description 172
- 239000010408 film Substances 0.000 claims description 59
- 238000005259 measurement Methods 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000005355 Hall effect Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 230000005415 magnetization Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910003321 CoFe Inorganic materials 0.000 claims description 2
- 229910019236 CoFeB Inorganic materials 0.000 claims description 2
- 229910018936 CoPd Inorganic materials 0.000 claims description 2
- 229910018979 CoPt Inorganic materials 0.000 claims description 2
- 229910015372 FeAl Inorganic materials 0.000 claims description 2
- 229910005347 FeSi Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 229910018279 LaSrMnO Inorganic materials 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000005381 magnetic domain Effects 0.000 description 36
- 230000005389 magnetism Effects 0.000 description 21
- 230000001276 controlling effect Effects 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010429 evolutionary process Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
Abstract
The present invention relates to a kind of methods that the multidomain structure for controlling ferromagnetic monofilm realizes the storage of ten state data, comprising: (1) applies sufficiently large negative saturation magnetic field to multidomain thin magnetic film, multidomain thin magnetic film is made to be in single domain state；(2) positive write-in magnetic field is applied to the multidomain thin magnetic film after step (1) operation and thin magnetic film is written to different more domain states, each more domain state is as an independent storage unit by changing the intensity in write-in magnetic field；The present invention can directly store 0,1,2 in a physical memory cell, 3,4,5,6,7,8,90 numerical value can only store the traditional technology of 0 and 1 two values in a physical memory cell at present to be different from, have broad application prospects in terms of high density, low-watt consumption magnetic memory electronic device, additionally aids the computer that exploitation directly utilizes decimal arithmetic.The present invention have the advantages that universality it is strong, it is easy to operate, can working and room temperature.
Description
Technical field
The present invention relates to a kind of methods that the multidomain structure for controlling ferromagnetic monofilm realizes the storage of ten state data, belong to information
The field of data storage of technology.
Background technique
The development of magnetic material and science and technology is closely connected together, since the compass in ancient times, to modern hard disk and
Hard disk reading head, then novel magnetic random memory part is arrived, all it be unable to do without the contribution of magnetic material.Such as: the magnetic storage in hard disk
Function is namely based on two dramatically different magnetic state of magnetic material to record " 0 " and " 1 "；And in magnetic tunnel junction it is then benefit
Cause tunnel to have high and low two Resistance states with the parallel and arranged anti-parallel of free layer and pinning layer magnetic moment indicate " 0 " and
"1".Exactly because also two different magnetic or resistance states easy to accomplish in reality, current computer be all based on two into
System.But with the fast development of information technology, demand of the people to device high storage density, low-power consumption is more more and more urgent.This
Us are required not only to make full use of existing material or device, but also will be further in existing material or device architecture
Find new performance.If stable ten weight magnetic and Resistance states can be experimentally provided, then just based on metric computer
The quick hair that it is possible that being developed, storage density can not only be greatlyd improve, and artificial intelligence, class brain can be promoted to calculate
Exhibition.
However so far, thin magnetic film is also only intended to binary storage, or a composition as function element
Part assists multiple-state storage, and thin magnetic film itself is not used directly as the carrier of polymorphic magnetic and Resistance states also.
Chinese patent literature CN103824588A discloses the method that a kind of pair of magnetic multidomain state is regulated and controled, this method be
While being passed through electric current in thin magnetic film, applying a magnetic field strength is 0 to 4 × 105The external magnetic field of A/m regulates and controls thin magnetic film
Magnetized state, wherein electric current is used to push magnetic domain in thin magnetic film magnetic multidomain state mobile, and external magnetic field is magnetic thin for regulating and controlling
State of the generation and existing magnetic domain of new magnetic domain in moving process in film, so that it is more to make thin magnetic film be in a stable magnetic
Farmland state.But the patent has the following defects or insufficient: first, need to apply simultaneously electric current and external magnetic field could to magnetic domain into
Row Effective Regulation, and when current density is less than 1 × 104A/cm2When external magnetic field and electric current regulation there is certain magnetic hysteresis to imitate
It answers；Second, external magnetic field is by growing ferromagnetic layer or placement permanent magnet, or the Ao Si generated by electric current near thin magnetic film
Moving head in special field and conventional hard is typically only capable to generate weaker magnetic field (< 1 tesla) come what is realized；Third, magnetic domain
The detection of state is merely with Hall effect.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of multidomain structures for controlling ferromagnetic monofilm to realize ten state numbers
According to the method for storage；
The present invention in terms of high density, low-watt consumption magnetic memory electronic device it is contemplated that have broad application prospects.
Term is explained:
1, multidomain thin magnetic film refers to that thin magnetic film includes the different small-sized magnetized area in a large amount of direction, each is small
It include a large amount of atoms in type magnetized area, and all atomic magnetic moments are arranged in parallel along a direction, which is known as
Magnetic domain.Atomic magnetic moment orientation between adjacent magnetic domains is different.
2, single domain (single domain) state, when referring to that the scale of magnetic material is less than critical value, original magnetic domain knot
Structure disappears, and the magnetic state that all magnetic moments are arranged in parallel along a direction.
3, ten state refers to ten residual magnetism states or Resistance states；
4, No overshot mode, before reaching magnetic field of the goal, added magnetic field is no more than magnetic field of the goal at any time
Extra show mode.
The technical solution of the present invention is as follows:
A method of the multidomain structure controlling ferromagnetic monofilm realizes the storage of ten state data, comprising:
(1) applying the magnetic field that one is greater than multidomain thin magnetic film saturation magnetic field in negative fluxfield direction (can apply magnetic field range
± 7 teslas), so that multidomain thin magnetic film is in single domain state；Unified original state is provided for data storage.
It is further preferred that using superconducting quantum interference device (SQUID) magnetometer, applying in negative fluxfield direction in the step (1)
One is greater than the magnetic field of multidomain thin magnetic film saturation magnetic field.
(2) positive direction magnetic field is applied to the multidomain thin magnetic film after step (1) operation, by No overshot mode, with
0~200 oersted/second advances the speed, and external magnetic field is increased to magnetic field of the goal (write-in magnetic field), obtains a certain more magnetic domain shapes
State；
(3) change the size of magnetic field of the goal, and execute step (1) to step (2), obtain another more domain states；It repeats
The step (3) is executed until obtaining domain state more than ten kinds；
By controlling the size of magnetic field of the goal, the quantity, size and direction of magnetic domain are influenced, by thin magnetic film " write-in " to not
Same more domain states.With the increase of magnetic field of the goal, more and more magnetic moments can be arranged along magnetic field of the goal direction, cause with
Magnetic field of the goal magnetic domain number in the same direction increases or region increases, and arranging reversed magnetic domain number with magnetic field of the goal magnetic moment can be reduced
Or direction tends to the arrangement of magnetic field of the goal direction.Each more domain state is as an independent storage unit；Different is more
Domain state not only can by the Magnetic Measurements such as remanent magnetization, Kerr magnetooptical effect " reading ", but also can by it is unusual suddenly
The Electrical transports measurements " reading " such as your effect, magneto-resistor.
(4) domain state more than ten kinds that reading step (3) obtains.
In multidomain thin magnetic film, the present invention changes magnetic domain quantity, size and Orientation, thus in magnetism by external magnetic field
Stable ten residual magnetism states or Resistance states are obtained in film, are realized and are directly stored 0,1,2,3,4,5 in a physical memory cell,
6,7,8,90 numerical value can only store the traditional technology of 0 and 1 two values in a physical memory cell at present to be different from.
It is preferred according to the present invention, the step (4), comprising: magnetic by remanent magnetization or Kerr magnetooptical effect
Measurement reads different more domain states, alternatively, being read by extraordinary Hall effect or the measurement of magneto-resistor Electrical transport different
More domain states.
It is preferred according to the present invention, it is prepared by magnetron sputtering, pulse laser deposition, molecular beam epitaxy or electron beam evaporation
Required multidomain thin magnetic film.
Preferred according to the present invention, the material of the multidomain thin magnetic film is iron magnetic metal film, ferromagnetic semiconductor film
Or rare earth metal ferromagnetic thin film；The material of the iron magnetic metal film be Fe, Co, Ni, CoPt, CoPd, NiFe, CoFe,
CoFeB, FeSi, FeSiAl or FeAl；The material of the ferromagnetic semiconductor film is GaMnAs, InMnAs or CoZnO；It is described dilute
The material of earth metal ferromagnetic thin film is LaSrMnO or LaCaMnO.
The invention has the benefit that
1, the present invention provides a kind of obtains the method for stablizing ten residual magnetism states or Resistance states, Neng Gou in thin magnetic film
One physical memory cell directly stores 0,1,2,3,4,5,6,7,8,90 numerical value, is deposited at present in a physics with being different from
Storage unit can only store the traditional technology of 0 and 1 two values, have in terms of high density, low-watt consumption magnetic memory electronic device wide
Application prospect, additionally aid exploitation directly utilize decimal arithmetic computer.
2, the present invention have the advantages that universality it is strong, it is easy to operate, can working and room temperature.
3, the present invention only needs to control applied external magnetic field (± 7 tesla) by superconducting magnet, does not need the auxiliary of electric current
Up to 10 stable magnetic and Resistance states can be realized by helping, and different magnetic and resistance states can not only use unusual Hall
Effect measurement can also pass through Magnetic Measurement, the measurement of magneto-optical property " reading ".
Detailed description of the invention
Fig. 1 is [Co/Pt]5Thin magnetic film gradually increases hysteresis loop schematic diagram when write-in magnetic field.
Fig. 2 is [Co/Pt]5Thin magnetic film gradually increases extraordinary Hall effect curve synoptic diagram when write-in magnetic field.
Fig. 3 (a) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the first remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (b) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under second of remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (c) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the third remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (d) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the 4th kind of remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (e) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the 5th kind of remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (f) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the 6th kind of remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (g) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the 7th kind of remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (h) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the 8th kind of remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (i) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the 9th kind of remnant magnetism state after magnetic field is written
Picture.
Fig. 3 (j) is [Co/Pt]15Thin magnetic film gradually increases the magnetic domain figure under the tenth kind of remnant magnetism state after magnetic field is written
Picture.
Specific embodiment
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment
A method of the multidomain structure controlling ferromagnetic monofilm realizes the storage of ten state data, comprises the following steps that
(1) Ta (1nm)/Pt (6nm)/[Pt0.3nm/ is successively sputtered on the Si substrate that (001) is orientated with magnetic control sputtering device
Co0.5nm]n/ Ta (3nm), wherein the growth rate of Pt and Co is respectively per secondWithIn conjunction with photoetching and from
Son etching prepares wide 10 microns, long 70 microns of Hall effect test structure, the measurement for extraordinary Hall effect.
(2)[Co/Pt]5In film, domain state is regulated and controled by external magnetic field, by film " write-in " to ten different magnetic shapes
State, step include:
A, using superconducting quantum interference device (SQUID) magnetometer, apply the magnetic field of -1500 oersteds in negative fluxfield direction, by institute
There is magnetic moment to arrange along negative fluxfield direction；At this point, entire [Co/Pt]5Film is in single domain state.
B, to [Co/Pt] after step (1) operation5Film applies positive direction magnetic field, by No overshot mode, with 0
~200 oersteds/second advances the speed, and write-in magnetic field is changed in 615 oersteds between 670 oersteds, is obtained shown in Fig. 2
0~9 hysteresis loop.Intuitively to detect domain state, to [Co/Pt]15The magnetic that film performs step A- step B was write
Journey, and measure the domain pattern after different " write-in " processes under remnant magnetism state.In the process original negative saturation magnetic field be-
676 oersted of magnetic field range~850 oersteds are written in 1000 oersteds.Concrete condition is as follows: external magnetic field is increased to 676 Austria
Si Te (write-in magnetic field), obtains the first magnetic state；Shown in its corresponding domain pattern such as Fig. 3 (a)；
C, changing write-in magnetic field is 701 oersteds, executes step A- step B, obtains second of magnetic state；Its corresponding magnetic
Shown in farmland image such as Fig. 3 (b)；
Changing write-in magnetic field is 703 oersteds, executes step A- step B, obtains the third magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (c)；
Changing write-in magnetic field is 704 oersteds, executes step A- step B, obtains the 4th kind of magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (d)；
Changing write-in magnetic field is 707 oersteds, executes step A- step B, obtains the 5th kind of magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (e)；
Changing write-in magnetic field is 720 oersteds, executes step A- step B, obtains the 6th kind of magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (f)；
Changing write-in magnetic field is 726 oersteds, executes step A- step B, obtains the 7th kind of magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (g)；
Changing write-in magnetic field is 750 oersteds, executes step A- step B, obtains the 8th kind of magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (h)；
Changing write-in magnetic field is 775 oersteds, executes step A- step B, obtains the 9th kind of magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (i)；
Changing write-in magnetic field is 850 oersteds, executes step A- step B, obtains the tenth kind of magnetic state；Its corresponding magnetic domain
Shown in image such as Fig. 3 (j)；
Write-in magnetic field is gradually increased, magnetic domain quantity, size and Orientation are changed, thin magnetic film is induced to different more magnetic domains
State；And negative saturation magnetic field is measured to the hysteresis loop between " write-in " magnetic field with superconducting quantum interference device (SQUID).[Co/Pt]5It is magnetic
The hysteresis loop that film gradually increases when magnetic field is written is as shown in Figure 1 the experiment has found that when write-in magnetic field is in 615 oersteds to 670
When between oersted, film hysteresis loop has apparent difference, using remanent magnetization as the record carrier of information, can obtain
0-9 into the decimal system.
Extraordinary Hall effect in magnetic material, magneto-resistor and the intensity of magnetization have it is close be associated with, therefore we can use
Easier electronic transport measurement carrys out different magnetic state locating for test sample.Fig. 2 gives [Co/Pt]5Film is in different " magnetic
Write " during extraordinary Hall effect measurement result.It can be seen that Hall voltage also has significantly not in different remnant magnetism states
Together, and remanent magnetism is directly proportional to Hall voltage.Therefore, it can be very good " to read " different remnant magnetism states with Hall voltage, use
Hall voltage equally may be implemented a physical memory cell and directly store ten numerical value as information recording carrier.
After the Kerr magnetooptical effect measurement of Fig. 3 (a)-Fig. 3 (j) gives different " magnetic is write " processes, remanent magnetism in thin magnetic film
The distribution of magnetic domain and its evolutionary process with outfield under state.In order to improve signal-to-noise ratio, which, which has used, repeats 15 periods
[Co/Pt]15Film.In test process, initial saturation field is -1000 oersteds, is then increased monotonically behind write-in magnetic field, measurement is surplus
Magnetic domain distribution under magnetic state.Grey (black) Regional Representative magnetic moment bears (just) direction along magnetic field in figure.From Fig. 3 (a)-Fig. 3 (j)
In as can be seen that external magnetic field can be very good control magnetic domain distribution, by thin magnetic film " write-in " to different remnant magnetism states, and
Magneto-optic effect can also be intuitively by remnant magnetism state " reading ".The area accounting on different orientation farmland can be used to record as information to carry
Body realizes that a physical memory cell directly stores ten numerical value.
Claims (5)
1. a kind of method that the multidomain structure for controlling ferromagnetic monofilm realizes the storage of ten state data characterized by comprising
(1) apply the magnetic field for being greater than multidomain thin magnetic film saturation magnetic field in negative fluxfield direction, be in multidomain thin magnetic film
Single domain state；
(2) positive direction magnetic field is applied to the multidomain thin magnetic film after step (1) operation, by No overshot mode, with 0~
200 oersteds/second advances the speed, and external magnetic field is increased to magnetic field of the goal, obtains a certain more domain states；
(3) change the size of magnetic field of the goal, and execute step (1) to step (2), obtain another more domain states；It repeats
The step (3) is until obtain domain state more than ten kinds；
(4) domain state more than ten kinds that reading step (3) obtains.
2. the method that a kind of multidomain structure for controlling ferromagnetic monofilm according to claim 1 realizes the storage of ten state data,
It is characterized in that, using superconducting quantum interference device (SQUID) magnetometer, applying one greater than more in negative fluxfield direction in the step (1)
The magnetic field of farmland thin magnetic film saturation magnetic field.
3. the method that a kind of multidomain structure for controlling ferromagnetic monofilm according to claim 1 realizes the storage of ten state data,
It is characterized in that, the step (4), comprising: read by remanent magnetization or Kerr magnetooptical effect Magnetic Measurement different
More domain states, alternatively, reading different more domain states by extraordinary Hall effect or the measurement of magneto-resistor Electrical transport.
4. the method that a kind of multidomain structure for controlling ferromagnetic monofilm according to claim 1 realizes the storage of ten state data,
It is characterized in that, magnetic by multidomain needed for magnetron sputtering, pulse laser deposition, molecular beam epitaxy or electron beam evaporation preparation
Film.
5. a kind of multidomain structure for controlling ferromagnetic monofilm according to claim 1 to 4 realizes the storage of ten state data
Method, which is characterized in that the material of the multidomain thin magnetic film is iron magnetic metal film, ferromagnetic semiconductor film or rare earth metal
Ferromagnetic thin film；The material of the iron magnetic metal film be Fe, Co, Ni, CoPt, CoPd, NiFe, CoFe, CoFeB, FeSi,
FeSiAl or FeAl；The material of the ferromagnetic semiconductor film is GaMnAs, InMnAs or CoZnO；The rare earth metal is ferromagnetic
The material of film is LaSrMnO or LaCaMnO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811060814.9A CN109215705B (en) | 2018-09-12 | 2018-09-12 | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811060814.9A CN109215705B (en) | 2018-09-12 | 2018-09-12 | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109215705A true CN109215705A (en) | 2019-01-15 |
| CN109215705B CN109215705B (en) | 2021-08-20 |
Family
ID=64983908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811060814.9A Expired - Fee Related CN109215705B (en) | 2018-09-12 | 2018-09-12 | Method for controlling multi-domain structure of ferromagnetic single-layer film to realize ten-state data storage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109215705B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190183A (en) * | 2019-04-24 | 2019-08-30 | 中国科学院金属研究所 | A kind of high Fe doping Fe with extraordinary Hall effect1+yThe preparation method of Te monocrystal thin films |
| CN113889151A (en) * | 2021-10-21 | 2022-01-04 | 郑州云海信息技术有限公司 | Ferromagnetic material-based mechanical hard disk data reading and writing method and system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995030986A1 (en) * | 1994-05-10 | 1995-11-16 | Hitachi Maxell, Ltd. | Magnetooptical recording medium, and method and apparatus for recording/reproduction |
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| CN1997515A (en) * | 2004-07-13 | 2007-07-11 | 加利福尼亚大学董事会 | Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage |
| US7399539B2 (en) * | 2003-12-15 | 2008-07-15 | Canon Kabushiki Kaisha | DWDD-type magneto-optic recording medium including buffer regions between recording track regions and method of producing the same |
| WO2012076871A1 (en) * | 2010-12-07 | 2012-06-14 | Cambridge Enterprise Limited | Magnectic structure |
| CN102768854A (en) * | 2012-06-21 | 2012-11-07 | 北京有色金属研究总院 | Magnetoelectric composite multi-state memory unit and preparation method thereof |
| CN103824588A (en) * | 2014-03-12 | 2014-05-28 | 中国科学院微电子研究所 | Method for regulating and controlling magnetic multi-domain state |
| CN105161616A (en) * | 2015-09-21 | 2015-12-16 | 山西师范大学 | Multi-resistance state memristor regulated together by electric field and magnetic field and manufacturing method thereof |
-
2018
- 2018-09-12 CN CN201811060814.9A patent/CN109215705B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995030986A1 (en) * | 1994-05-10 | 1995-11-16 | Hitachi Maxell, Ltd. | Magnetooptical recording medium, and method and apparatus for recording/reproduction |
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| US7399539B2 (en) * | 2003-12-15 | 2008-07-15 | Canon Kabushiki Kaisha | DWDD-type magneto-optic recording medium including buffer regions between recording track regions and method of producing the same |
| CN1997515A (en) * | 2004-07-13 | 2007-07-11 | 加利福尼亚大学董事会 | Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage |
| WO2012076871A1 (en) * | 2010-12-07 | 2012-06-14 | Cambridge Enterprise Limited | Magnectic structure |
| CN102768854A (en) * | 2012-06-21 | 2012-11-07 | 北京有色金属研究总院 | Magnetoelectric composite multi-state memory unit and preparation method thereof |
| CN103824588A (en) * | 2014-03-12 | 2014-05-28 | 中国科学院微电子研究所 | Method for regulating and controlling magnetic multi-domain state |
| CN105161616A (en) * | 2015-09-21 | 2015-12-16 | 山西师范大学 | Multi-resistance state memristor regulated together by electric field and magnetic field and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| S. S. P. PARKIN, M. HAYASHI, L. THOMAS: "<Magnetic Domain-Wall Racetrack Memory>", <SCIENCE> * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190183A (en) * | 2019-04-24 | 2019-08-30 | 中国科学院金属研究所 | A kind of high Fe doping Fe with extraordinary Hall effect1+yThe preparation method of Te monocrystal thin films |
| CN113889151A (en) * | 2021-10-21 | 2022-01-04 | 郑州云海信息技术有限公司 | Ferromagnetic material-based mechanical hard disk data reading and writing method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109215705B (en) | 2021-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sun | Current-driven magnetic switching in manganite trilayer junctions | |
| Fullerton et al. | Exchange-spring behavior in epitaxial hard/soft magnetic bilayers | |
| US10991874B2 (en) | Magneto-ionic device with a solid state proton pump and methods for using the same | |
| US7170778B2 (en) | High speed low power magnetic devices based on current induced spin-momentum transfer | |
| EP2053613A1 (en) | Synthetic-ferrimagnet sense-layer for high density MRAM applications | |
| US20060146598A1 (en) | Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell | |
| CN109994598B (en) | Spin orbit torque type magnetization rotating element and magnetoresistance effect element | |
| CN109215705A (en) | A method of the multidomain structure controlling ferromagnetic monofilm realizes the storage of ten state data | |
| CN101853920B (en) | Method for preparing double-exchange biasing field type spin valve | |
| Pardavi-Horvath | Switching properties of a regular two-dimensional array of small uniaxial particles | |
| Funabashi et al. | Voltage-Controlled Magnetic Anisotropy in Tb–Fe–Co/MgO/Gd–Fe MTJ Devices | |
| CN113488584A (en) | FePt material-based magnetization switching device, external magnetic field-free switching method and application | |
| CN117202760A (en) | Magnetic tunnel junction memory cell based on magnetic Sjog seed and operation method thereof | |
| Griffiths et al. | Temperature-dependent studies of coupled fe 55 pt 45/fe 49 rh 51 thin films | |
| CN109243511A (en) | A method of control free layer domain structure realizes that ten state data store in magnetic tunnel junction | |
| Tekielak et al. | Creation of Out-of-Plane Magnetization Ordering by Increasing the Repetitions Number $ N $ in (Co/Au) $ _ {\rm N} $ Multilayers | |
| Sun et al. | Field-free switching of perpendicular magnetization through spin–orbit torque in FePt/[TiN/NiFe] 5 multilayers | |
| Krishnia | Current-driven domain wall dynamics in coupled ferromagnetic structures | |
| Thomas | Preparation and characterisation of magnetic single and double barrier junctions | |
| Rollano et al. | Magnetic order and disorder in nanomagnets probed by superconducting vortices | |
| Zhao et al. | Study of 360 domain walls in NiFe/NiO film by tip–sample interaction on magnetic force microscope | |
| US12046268B2 (en) | Cryogenic magnetic device more particularly for logic component or memory | |
| Reiss et al. | Spinelectronics and its applications | |
| Wong | Enhanced spin-orbit torque (SOT) and spin accumulation quantification in perpendicularly magnetised systems | |
| Reichlová | Nanostructures and Materials for Antiferromagnetic Spintronics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210820 |