CN109243511A - A method of control free layer domain structure realizes that ten state data store in magnetic tunnel junction - Google Patents
A method of control free layer domain structure realizes that ten state data store in magnetic tunnel junction Download PDFInfo
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- CN109243511A CN109243511A CN201811060639.3A CN201811060639A CN109243511A CN 109243511 A CN109243511 A CN 109243511A CN 201811060639 A CN201811060639 A CN 201811060639A CN 109243511 A CN109243511 A CN 109243511A
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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Abstract
The present invention relates to a kind of methods that the storage of ten state data is realized in control free layer domain structure in magnetic tunnel junction, comprising: (1) hysteresis loop for measuring magnetic tunnel junction finds out initial magnetic field；(2) initial magnetic field is applied to magnetic tunnel junction in negative fluxfield direction；(3) apply positive direction magnetic field to magnetic tunnel junction to advance the speed by No overshot mode with 0~200 oersted/second, positive direction magnetic field is increased into write-in magnetic field, obtains a certain more domain states；(4) change the size in write-in magnetic field, and execute step (2) to step (3), obtain another more domain states；The step is repeated until obtaining domain state more than ten kinds；(5) domain state more than ten kinds is read.The present invention can be more applied directly in existing magnetic tunnel structure, greatly expand the performance of current magnetic tunnel junction.The present invention has good application prospect in terms of high density, the novel spinning electron memory of low-power consumption.
Description
Technical field
The present invention relates to a kind of methods that the storage of ten state data is realized in control free layer domain structure in magnetic tunnel junction, belong to
In the field of data storage of information technology.
Background technique
To meet consumer electronics product and big data storage to good characteristics such as non-volatile, high density, low-power consumption
Data store demand growing day by day, and researchers will wish to place polymorphic non-volatile memory device on.In multiple-state storage device
In, a storage unit can recorde up to ten even more numerical value, rather than present " 0 " and " 1 " two values.Cause
This, Multi-state data storage can not only greatly improve the density of data storage, and neural network, artificial intelligence can be promoted etc.
It is fast-developing.
Currently, experimentally realizing that the approach of polymorphic non-volatile memory mainly has: first, utilize the phase transformation of material itself, system
Standby multi-state phase-change memory part, referring to Wang, H.S.P.et al.Proceeding of the IEEE 98,2201 (2010)；
Second, it is answered using controllable electroluminescent resistive effect, prepares multi-state resistive memory device, referring to Balatti, S.et
al.Adv.Mater.25,1474(2013)；Third prepares more iron memory devices using magneto-electric coupled in more iron hetero-junctions,
Referring to Boni, A.G.et al.Phys.Rev.Appl.8,034035 (2017).Although previous research obtained it is certain into
Exhibition, still, it is still a problem that research, which discovers how that stable realization is more than 4 states,.For example, phase change memory must then utilize material
Phase transformation, and can have the material of stable phase transformation is a small number of after all, while can only generally also provide 2 stable state (phase transformations
Front and back)；Resistive is also equally that turn-on and turn-off are most stable of 2 states, and it is then relatively difficult to obtain stable intermediate state.?
The arrangement of the Parallel and antiparallel of free layer and pinning layer magnetic moment can only lead to high and low two Resistance states in magnetic tunnel junction.If
It uses ferroelectric material as insulating layer in magnetic tunnel junction, can only generally also obtain 4 Resistance states in conjunction with electric field regulation, and fit
The ferroelectric insulator that tunnel layer is done in conjunction is seldom, this chooses but also obtaining stable more resistance states in magnetic tunnel junction as one
War.
Chinese patent literature 102543180A is disclosed with the multidigit magnetic memory that can be independently programmable free layer farmland, including
It is a kind of for such as device of the non-volatile memory cells of multidigit magnetic random access memory cells and associated method.Root
According to various implementation columns, magnetic tunnel junction (MTJ) has ferromagnetic free layer, and ferromagnetic free layer, which has, can respectively be independently programmable to predetermined
Magnetized more magnetic domains.The Different Logic form of MTJ can be read as after those magnetization.This patent discloses " magnetic tunnel junction
(MTJ) there is ferromagnetic free layer, and ferromagnetic free layer is with can respectively be independently programmable to making a reservation for magnetized more magnetic domains ", the patent
Middle free layer need to be made of two regions laterally adjacent, of different sizes, and independent magnetic domain is kept by shape anisotropy
Structure, this design have following shortcoming: 1. sample preparations will be extremely complex, and free layer itself needs to be designed to size, shape
The different region of shape；2. the shape anisotropy of usual material be it is smaller, it is good to stability, then need to increase the area Liang Ge
Domain shape, the difference of size, necessarily cause device size larger, it is difficult to meet the needs of high density storage.When two area differences
When not smaller, two coercitive difference in region will become smaller, and necessarily cause stability insufficient.3. single storage unit in embodiment
Also be only capable of providing 4 stable resistance states, to realize more resistance states, then free layer need by three even more shapes,
Region composition of different sizes, above-mentioned the first two defect will be more significant, are practically impossible to realization.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of control free layer domain structures to realize in magnetic tunnel junction
The method of ten state data storage, it is contemplated that have broad application prospects in terms of high density, low-watt consumption magnetic memory electronic device.
The present invention is in artificial antiferromagnetic/ferromagnetic pinning layer/insulating layer/ferromagnetic free layer magnetic tunnel junction, by outer
Magnetic field changes the magnetic domain quantity of multidomain free layer, size and Orientation, without influencing the magnetic moment arrangement in pinning layer, thus in magnetism
Ten stable residual magnetism states are obtained in tunnel knot, and are read with Tunneling Magnetoresistance, are realized straight in a physical memory cell
Connect 0 to 90 numerical value of storage.
Term explanation:
1, the very thin insulating layer of a layer thickness, the element of composition, core magnetic tunnel junction: are pressed from both sides between two ferromagnetic layers
Structure is ferromagnetic layer/insulating layer/ferromagnetic layer.
2, magneto-resistor: the phenomenon that resistance of material and device changes with externally-applied magnetic field.
3, free layer: the small magnetosphere of coercivity, magnetic moment easily change with external magnetic field in magnetic tunnel junction.
4, pinning layer: the big magnetosphere of coercivity, magnetic moment usually immobilize in magnetic tunnel junction.
The technical solution of the present invention is as follows:
A method of control free layer domain structure realizes that ten state data store in magnetic tunnel junction, the magnetic tunnel
Knot includes pinning layer, insulating layer, free layer, and the insulating layer, including step are accompanied between the pinning layer and the free layer
It is as follows:
(1) hysteresis loop for measuring the magnetic tunnel junction, analysis obtains pinning layer and free layer hair from hysteresis loop
The coercive field of raw reversion, chooses initial magnetic field, is allowed to meet free layer coercive field less than initial magnetic field and initial magnetic field is less than nail
Layer coercive field is pricked, under the initial magnetic field, the free layer magnetic moment is arranged along magnetic field negative direction completely, and does not influence the nail
Prick the orientation of layer magnetic moment；Unified original state is provided for data write-in.Therefore, during subsequent operation, pinning layer
The mono domain magnetic layer along negative fluxfield direction be can be used as to handle.
(2) apply the initial magnetic field that step (1) obtains to the magnetic tunnel junction in negative fluxfield direction, make the pinning layer
In single domain state；
(3) positive direction magnetic field is applied to the magnetic tunnel junction, by No overshot mode, with 0~200 oersted/
Second advances the speed, and positive direction magnetic field is increased to write-in magnetic field, obtains a certain more domain states；
(4) change the size in write-in magnetic field, and execute step (2) to step (3), obtain another more domain states；It repeats
The step (4) is executed until obtaining domain state more than ten kinds.Change write-in magnetic field according to sequence from small to large, in principle step
(2) guarantee that all writing process has a unified starting point, thus be written magnetic field size and final more domain states it
Between should be one-to-one.With the increase in additional write-in magnetic field, the more and more magnetic moments of free layer can be from initial magnetic field side
To being inverted to along write-in magnetic direction arrangement, causes to increase along write-in magnetic direction magnetic domain number or domain size increases.Cause
This, is written the of different sizes of magnetic field, and the quantity of free layer magnetic domain, size, distribution will also change accordingly, finally will be free
Layer " write-in " is to ten different magnetic state.
Pass through superconductive quantum interference magnetometer survey initial magnetic field to the hysteresis loop for applying write-in magnetic field section, Ke Yifa
The free layer remanent magnetization of existing different magnetic domain distributions has significant different (the i.e. more domain states of remnant magnetism state), each
Remnant magnetism state all can serve as one numerical value of independent unit records.
(5) domain state more than ten kinds that reading step (4) obtains.
It is further preferred that the size for changing write-in magnetic field, which refers to, increases the big of write-in magnetic field in the step (4)
It is small.
It is preferred according to the present invention, the step (5), comprising: the magnetoelectricity of magnetic tunnel junction is measured by Electrical transport
Resistance, the domain state more than ten kinds of different free layers is read using magneto-resistance effect.
It is further preferred that measuring the magneto-resistor of magnetic tunnel junction by Electrical transport, read using magneto-resistance effect
The domain state more than ten kinds of different free layers, comprising: with the increase in additional positive direction write-in magnetic field, resistance B specific gravity increases,
Lead to bigger magneto-resistance effect, the free layer magnetic domain distribution and the magneto-resistor of the magnetic tunnel junction are formed correspondingly
Relationship obtains multiple magnetoelectricity resistance states, magnetoelectricity resistance state, that is, more domain states, each magnetoelectricity resistance state records a numerical value, realizes more
State storage；The magneto-resistor of the magnetic tunnel junction includes resistance A and resistance B in parallel, and resistance A is the free layer and the nail
Prick the low resistance of layer magnetic moments parallel arrangement；Resistance B is the high resistance of the free layer and the pinning layer magnetic moment arranged anti-parallel.
It is preferred according to the present invention, the step (1), comprising: pass through magnetism described in superconductive quantum interference magnetometer survey
The hysteresis loop of tunnel knot.
It is preferred according to the present invention, the pinning layer with a thickness of 1-5nm, the insulating layer with a thickness of 1-2nm, it is described
Free layer with a thickness of 1-5nm；
The material of the pinning layer is CoFeB or CoFe, and the material of the insulating layer is MgO, the material of the free layer
For CoFeB or CoFe.Because of the special band structure of CoFe, CoFeB and MgO, so that MgO magnetic tunnel junction is tunnel so far
Wear the maximum system of magneto-resistor.
It is preferred according to the present invention, the magnetic tunnel junction by it is lower from it is upper successively include with a thickness of 3nm Ta, with a thickness of
The CuN of 10nm, the Ta with a thickness of 5nm, the Ru with a thickness of 5nm, the IrMn with a thickness of 8nm, the CoFe with a thickness of 2.5nm, thickness
Ru for 0.85nm, the CoFeB with a thickness of 3nm, the MgO with a thickness of 0.5-3nm, the CoFeB with a thickness of 2.5nm, with a thickness of 8nm
Ta, the Cu with a thickness of 10nm, the Ru with a thickness of 5nm, with a thickness of 3nm CoFeB be the pinning layer, magnetic moment because
The presence of the artificial anti-ferromagnetic structure of IrMn/CoFe/Ru/CoFeB and be pinned, it is difficult to change with external magnetic field.With a thickness of 2.5nm's
CoFeB is the free layer.
The invention has the benefit that
1, the present invention not only have the advantages that can working and room temperature, easy-operating, can more be applied directly to existing magnetism tunnel
In road structure, the performance of magnetic tunnel junction can be greatly improved, including storage density.
2, the present invention provides one kind realizes that ten state data store by controlling free layer domain structure in magnetic tunnel junction
Method, the same storage unit can store 10 information, rather than 2 present information, therefore in high density, low-power consumption
There is good application prospect in terms of novel spinning electron memory.
Detailed description of the invention
Fig. 1 is the hysteresis loop schematic diagram of CoFeB/MgO/CoFeB magnetic tunnel junction；
Minor loop schematic diagram when Fig. 2 is CoFeB/MgO/CoFeB magnetic tunnel junction difference " write-in " magnetic field；
Fig. 3 is CoFeB/MgO/CoFeB magnetic tunnel junction Investigation on Room-temperature Magnetoresistance schematic diagram；
Magneto-resistance effect schematic diagram when Fig. 4 is CoFeB/MgO/CoFeB magnetic tunnel junction room temperature difference " write-in " magnetic field.
Specific embodiment
The present invention will be further described with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment
A method of control free layer domain structure realizes that ten state data store in magnetic tunnel junction, comprising:
(1) it is clean, have 300nm thickness SiO2Singulus is used on (001) Si substrate of oxide layer
ROTARIS physical vapor deposition (PVD) equipment prepares Ta 3/CuN 10/Ta 5/Ru 5/ at room temperature
5 magnetic tunnel of IrMn 8/CoFe 2.5/Ru 0.85/CoFeB 3.0/MgO 0.5-3/CoFeB 2.5/Ta 8/Cu 10/Ru
Knot.Number represents every thickness degree, and unit is nanometer.The background vacuum of apparatus for preparation is better than 10-8Millibar.The sample prepared,
360 degrees Celsius of 2 hours of annealing.Apply the induced magnetic field of 8000 oersteds in annealing process along sample surfaces, it is therefore an objective to make
The antiferromagnetic order that IrMn has had, so as to play pinning effect.By photoetching, reactive ion etching and lift-off technology, diameter is prepared
For 6 microns of cylindrical magnetic tunnel knot.
(2) superconductive quantum interference magnetometer is used, the magnetism of the about tunnel junction film of 5mm × 5mm is measured size.Such as Fig. 1
Shown, direction of each layer magnetic moment in different magnetic field is marked by signal arrow.The field it is found that -800 oersteds of application is analyzed, it can
To guarantee that free layer CoFeB magnetic moment is all arranged along negative direction, the magnetic moment without will affect pinning layer is arranged, and therefore " is originally written into "
It is selected as -800 oersteds in magnetic field.
(3) positive direction magnetic field is applied to magnetic tunnel junction, by No overshot mode, with 0~200 oersted/second
It advances the speed, positive direction magnetic field is gradually increased to write-in magnetic field, this is in the process it is noted that keep pinning layer magnetic moment direction not
Become (dashed region in Fig. 1).The first more domain state is obtained, the first farmland state should refer to initial shape if strictly corresponding to
State, all magnetic moments are arranged along initial magnetic field direction, 0 shown in corresponding diagram.As long as actually write-in magnetic field is less than < 60 oersteds all
It is in state shown in 0；
(4) changing write-in magnetic field is 65 oersteds, executes step (2)-step (3), obtains second of magnetic state；
Changing write-in magnetic field is 65.5 oersteds, executes step (2)-step (3), obtains the third magnetic state；
Changing write-in magnetic field is 66.1 oersteds, executes step (2)-step (3), obtains the 4th kind of magnetic state；
Changing write-in magnetic field is 66.2 oersteds, executes step (2)-step (3), obtains the 5th kind of magnetic state；
Changing write-in magnetic field is 66.3 oersteds, executes step (2)-step (3), obtains the 6th kind of magnetic state；
Changing write-in magnetic field is 66.4 oersteds, executes step (2)-step (3), obtains the 7th kind of magnetic state；
Changing write-in magnetic field is 66.5 oersteds, executes step (2)-step (3), obtains the 8th kind of magnetic state；
Changing write-in magnetic field is 66.7 oersteds, executes step (2)-step (3), obtains the 9th kind of magnetic state；
Changing write-in magnetic field is 66.8 oersteds, executes step (2)-step (3), obtains the tenth kind of magnetic state；
The minor loop during " magnetic is write " is measured, Fig. 2 result is obtained.It can be seen that hysteresis loop is integrally biased to magnetic field
Positive direction, this is caused by the stray magnetic field (Stray field) of magnetic material in device.Therefore, the intensity of magnetization at stray magnetic field
Represent the true remanent magnetization of free layer.So use remanent magnetization at 58Oe as the carrier of the storage of information,
The magnetic field of 58Oe can be provided in practical application with additional hard magnetic layer.It can be seen that under the action of different write-in magnetic fields,
Significant change has occurred in the magnetic domain of free layer CoFeB, has obtained ten different residual magnetism states.Select remanent magnetization conduct
The record carrier of information, the 0-9 in the available decimal system realize and directly store 0,1,2,3,4 in a physical memory cell,
5,6,7,8,90 numerical value.
The resistance of magnetic tunnel junction is directly related with the arrangement mode of free layer and pinning layer magnetic moment, changes the same of free layer
When maintain pinning layer it is constant, then magnetic tunnel junction is necessarily caused to be in different Resistance states, magneto-resistor size is also had significantly
Difference, therefore directly " reading " free layer different magnetic state of magneto-resistance effect size can be used.With 4 line measurement magnetic channels
The magneto-resistor of knot, Keithley 2400 are used as current source, and 2182 nanovoltmeter of Keithley surveys voltage.As shown in figure 3, we
Select dashed region to demonstrate the storing process of " magnetic is write "-" electricity is read ", because in this area, pinning layer magnetic moment is constant, only certainly
It is inverted by layer magnetic moment with outfield.
(5) magneto-resistor that magnetic tunnel junction is measured by Electrical transport, different freedom is read using magneto-resistance effect
The domain state more than ten kinds of layer.Include: as shown in figure 4, with " write-in " magnetic field enhancing, more and more free layer magnetic moments edge
The arrangement of magnetic field positive direction.In view of pinning layer magnetic moment is arranged along negative fluxfield direction always, the enhancing in " write-in " magnetic field is so that freedom
Layer increasingly tends to arranged anti-parallel with pinning layer magnetic moment.With the increase in additional positive direction magnetic field, resistance B specific gravity increases, leads
Bigger magneto-resistance effect is caused, the free layer magnetic domain distribution and the magneto-resistor of the magnetic tunnel junction form one-to-one pass
System obtains multiple magnetoelectricity resistance states, magnetoelectricity resistance state, that is, more domain states, each magnetoelectricity resistance state records a numerical value, realizes polymorphic
Storage；The resistance of the magnetic tunnel junction includes resistance A and resistance B in parallel, and resistance A is the free layer and the pinning layer
The low resistance of magnetic moments parallel arrangement；Resistance B is the high resistance of the free layer and the pinning layer magnetic moment arranged anti-parallel.With void
The carrier that tunneling magnetic resistance under remnant magnetism state shown in line is recorded as information then may be implemented straight in a physical memory cell
Connect storage ten numerical value of 0-9.
Stray magnetic field measured by magnetic (Fig. 2) and magneto-resistor (Fig. 4) is respectively 65 oersteds and 58 oersteds, this is mainly
Caused by dendrite: 5 millimeters × 5 millimeters of magnetic sample size, 6 microns of tunnel knot size diameter.
The above is application example of the invention, it is noted that without departing from the principle of the present invention, can be with
Several improvement are made, obtain more magnetic and Resistance states, these modifications and embellishments are also considered to be within the scope of the present invention.
Claims (7)
1. a kind of method that the storage of ten state data is realized in control free layer domain structure in magnetic tunnel junction, the magnetic tunnel junction
Including pinning layer, insulating layer, free layer, the insulating layer is accompanied between the pinning layer and the free layer, which is characterized in that
It comprises the following steps that
(1) hysteresis loop for measuring the magnetic tunnel junction, analysis obtains pinning layer from hysteresis loop and free layer occurs instead
The coercive field turned chooses initial magnetic field, is allowed to meet free layer coercive field less than initial magnetic field and initial magnetic field is less than pinning layer
Coercive field, under the initial magnetic field, the free layer magnetic moment is arranged along magnetic field negative direction completely, and does not influence the pinning layer
The orientation of magnetic moment；
(2) apply the initial magnetic field that step (1) obtains to the magnetic tunnel junction in negative fluxfield direction, be in the pinning layer
Single domain state；
(3) positive direction magnetic field is applied to the magnetic tunnel junction, by No overshot mode, with 0~200 oersted/second
It advances the speed, positive direction magnetic field is increased into write-in magnetic field, obtains a certain more domain states；
(4) change the size in write-in magnetic field, and execute step (2) to step (3), obtain another more domain states；It repeats
The step (4) is until obtain domain state more than ten kinds；
(5) domain state more than ten kinds that reading step (4) obtains.
2. the storage of ten state data is realized in a kind of control free layer domain structure according to claim 1 in magnetic tunnel junction
Method, which is characterized in that in the step (4), the size for changing write-in magnetic field refers to the size for increasing write-in magnetic field.
3. the storage of ten state data is realized in a kind of control free layer domain structure according to claim 1 in magnetic tunnel junction
Method, which is characterized in that the step (5), comprising: the magneto-resistor that magnetic tunnel junction is measured by Electrical transport utilizes magnetic
Electricresistance effect reads the domain state more than ten kinds of different free layers.
4. the storage of ten state data is realized in a kind of control free layer domain structure according to claim 3 in magnetic tunnel junction
Method, which is characterized in that the magneto-resistor that magnetic tunnel junction is measured by Electrical transport is read different using magneto-resistance effect
The domain state more than ten kinds of free layer, comprising: with the increase in additional positive direction write-in magnetic field, resistance B specific gravity increases, causes more
Big magneto-resistance effect, the free layer magnetic domain distribution and the magneto-resistor of the magnetic tunnel junction form one-to-one relationship,
Multiple magnetoelectricity resistance states, magnetoelectricity resistance state, that is, more domain states are obtained, each magnetoelectricity resistance state records a numerical value, realizes polymorphic deposit
Storage；The magneto-resistor of the magnetic tunnel junction includes resistance A and resistance B in parallel, and resistance A is the free layer and the pinning layer
The low resistance of magnetic moments parallel arrangement；Resistance B is the high resistance of the free layer and the pinning layer magnetic moment arranged anti-parallel.
5. the storage of ten state data is realized in a kind of control free layer domain structure according to claim 1 in magnetic tunnel junction
Method, which is characterized in that the step (1), comprising: pass through the magnetic of magnetic tunnel junction described in superconductive quantum interference magnetometer survey
Hysteresis curves.
6. the storage of ten state data is realized in a kind of control free layer domain structure according to claim 1 in magnetic tunnel junction
Method, which is characterized in that the pinning layer with a thickness of 1-5nm, the insulating layer with a thickness of 1-2nm, the free layer
With a thickness of 1-5nm；
The material of the pinning layer is CoFeB or CoFe, and the material of the insulating layer is MgO, and the material of the free layer is
CoFeB or CoFe.
7. ten state data are realized in a kind of -6 any control free layer domain structures in magnetic tunnel junction according to claim 1
The method of storage, which is characterized in that the magnetic tunnel junction by it is lower from it is upper successively include with a thickness of the Ta of 3nm, with a thickness of 10nm
CuN, the Ta with a thickness of 5nm, the Ru with a thickness of 5nm, the IrMn with a thickness of 8nm, the CoFe with a thickness of 2.5nm, with a thickness of
The Ru of 0.85nm, the CoFeB with a thickness of 3nm, the MgO with a thickness of 0.5-3nm, with a thickness of the CoFeB of 2.5nm, with a thickness of 8nm's
Ta, the Cu with a thickness of 10nm, the Ru with a thickness of 5nm are the pinning layer with a thickness of the CoFeB of 3nm, with a thickness of 2.5nm's
CoFeB is the free layer.
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| CN109243511B (en) | 2021-08-20 |
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