CN111312891A - Flexible GMR magnetic field sensor and preparation method thereof - Google Patents
Flexible GMR magnetic field sensor and preparation method thereof Download PDFInfo
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- CN111312891A CN111312891A CN202010113228.7A CN202010113228A CN111312891A CN 111312891 A CN111312891 A CN 111312891A CN 202010113228 A CN202010113228 A CN 202010113228A CN 111312891 A CN111312891 A CN 111312891A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
A flexible GMR magnetic field sensor and its preparation method, including flexible substrate, giant magnetoresistance structure and conducting layer; the giant magnetoresistance structure and the conducting layer are both arranged on the upper surface of the flexible substrate, and the conducting layer is arranged around the giant magnetoresistance structure; the giant magnetoresistance structure comprises a first buffer layer, a second buffer layer, a pinning layer, an isolation layer and two ferromagnetic layers, wherein the two ferromagnetic layers are a pinned layer and a free layer respectively; the first buffer layer is arranged on the upper surface of the flexible substrate, and the pinning layer, the pinned layer, the isolation layer, the free layer and the second buffer layer are sequentially arranged on the first buffer layer from bottom to top to form a giant magnetoresistance structure. The invention realizes that the multilayer magnetic sensor film with the giant magnetoresistance structure can be bent for thousands of times with the curvature radius of micron order without generating fatigue by using the ultrathin flexible substrate, can reduce the area of a device to realize high-density chip integration, and has the advantages of higher sensitivity, small volume, low power consumption, high reliability, good temperature characteristic and integration.
Description
Technical Field
The invention belongs to the technical field of sensor design, and particularly relates to a flexible GMR magnetic field sensor and a preparation method thereof.
Background
The sensor has the functions of sensing, collecting, converting, transmitting, processing and the like of magnetic field information, and becomes an indispensable important electronic component in an automatic detection and automatic control system. At present, GMR materials have been commercialized in the fields of magnetic sensors, computer-readable magnetic heads, magnetic random access memories, etc., and are very suitable for angle, position, rotation speed, etc. measurements in industrial control fields due to their high sensitivity to low fields, and are used to manufacture high-density storage media, and are widely used in various fields such as non-contact position measurement, traffic speed detection, bio-detection, power systems, etc. Compared with the traditional sensor, the GMR sensor has the advantages of higher sensitivity, small volume, low power consumption, high reliability, good temperature characteristic, integration and the like, so that the market share of the GMR sensor in the magnetic sensor is increased. The giant magnetoresistance effect refers to the phenomenon that the resistivity of a magnetic material is greatly changed when an external magnetic field acts compared with the resistivity of the magnetic material without the external magnetic field. Giant magnetoresistance is a quantum mechanical effect that results from a layered magnetic thin film structure made of alternating thin layers of ferromagnetic and non-ferromagnetic materials. When the magnetic moments of two adjacent ferromagnetic layers are parallel to each other, the carrier-spin dependent scattering is minimal, and the material has minimal resistance; when the magnetic moments of two adjacent ferromagnetic layers are antiparallel, the spin-dependent scattering is strongest and the resistance of the material is greatest. The direction of the magnetic moment of a ferromagnetic material is controlled by an external magnetic field applied to the material. The exchange bias effect of an antiferromagnetic material is generally adopted to pin the magnetization direction of one ferromagnetic layer, so that the ferromagnetic layer cannot freely turn; while the other ferromagnetic layer is free to turn in response to an applied magnetic field and is referred to as the free layer. When the external magnetic field exceeds the coercive field of the free layer, two states of parallel and antiparallel magnetization directions can be realized, and minimum and maximum values of magnetoresistance are generated. The magneto-resistance extreme value has a linear relation with the external magnetic field, so that the magneto-resistance extreme value can be used for measuring the size of the external magnetic field.
Current magnetic field sensors have several drawbacks and deficiencies: (1) the traditional magnetic field sensor is a current device based on a Hall effect, has the problems of large volume, high power consumption, low sensitivity, small measurement range and the like, and the application range of the magnetic field sensor is limited by the defects of the principle and the manufacturing technology of the traditional magnetic field sensor. (2) Although the novel GMR sensor is of a multilayer thin film structure, the defect of high energy consumption of the traditional magnetic field sensor is relieved, the insufficient space utilization rate of low integration level of a device can not be overcome, and the measurement range of the novel GMR sensor is further reduced compared with that of the traditional sensor. (3) The existing GMR magnetic field sensor is of an inflexible structure, cannot be bent, folded and cut, cannot fully utilize the volume shape, and is not high enough in use density. (4) Most of the existing GMR magnetic field sensors are silicon-based devices, and the problems of weight, breakdown leakage and the like cannot be solved in the aspect of integration. (5) The existing GMR device has higher processing cost and limited commercial value. (6) The existing GMR sensor is difficult to break through in the aspects of solving the problems of heat dissipation, influence of external temperature and the like.
Disclosure of Invention
The present invention aims to provide a flexible GMR magnetic field sensor and a method for manufacturing the same to solve the above problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a flexible GMR magnetic field sensor comprises a flexible substrate, a giant magnetoresistance structure and a conductive layer; the giant magnetoresistance structure and the conducting layer are both arranged on the upper surface of the flexible substrate, and the conducting layer is arranged around the giant magnetoresistance structure; the giant magnetoresistance structure comprises a first buffer layer, a second buffer layer, a pinning layer, an isolation layer and two ferromagnetic layers, wherein the two ferromagnetic layers are a pinned layer and a free layer respectively; the first buffer layer is arranged on the upper surface of the flexible substrate, and the pinning layer, the pinned layer, the isolation layer, the free layer and the second buffer layer are sequentially arranged on the first buffer layer from bottom to top to form a giant magnetoresistance structure.
Further, the flexible substrate is PET, PEN, PMMA or Kapton.
Further, the conductive layer is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN or TiN.
Further, the isolation layer is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti or Mo.
Further, the free layer is one of CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo or CoNbZr.
Further, the pinning layer is made of one antiferromagnetic material of IrMn, PtMn or FeMn; the pinned layer is made of one ferromagnetic material of CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo or CoNbZr; the buffer layer is Ta.
Furthermore, the conducting layer is divided into four parts, and the conducting layer is arranged on two sides of two end parts of the giant magnetoresistance structure.
Further, a method for preparing a flexible GMR magnetic field sensor comprises the following steps:
step 3, growing a giant magnetoresistance film, sequentially depositing the required target materials by adopting a magnetron sputtering technology, and growing a plurality of layers of giant magnetoresistance films in the whole reserved area;
and 7, stripping, and after sputtering is finished, removing the photoresist and the metal layer on the photoresist through a stripping process to form a conductive layer.
Further, the step 2 specifically includes the following operation processes:
gluing: spraying a layer of photoresist on a piezoelectric substrate, and drying in a 115 ℃ oven for 20min after coating the photoresist;
exposure: etching a required shape pattern on the photoresist by using ultraviolet exposure; firstly, attaching a mask plate to a film to be exposed, irradiating for 9s under ultraviolet laser, and then placing in an oven at 115 ℃ for 1 min;
and (3) developing: and (3) soaking the exposed piezoelectric substrate in a developing solution for 1min, and cleaning and drying the piezoelectric substrate by using deionized water after a pattern appears.
Compared with the prior art, the invention has the following technical effects:
the invention realizes the environmental application of the GMR magnetic field sensor under the bendable and stretching conditions by growing the GMR magnetic material structure on the flexible substrate, realizes that the multilayer magnetic sensor film with the giant magnetoresistance structure can be bent for thousands of times without fatigue by using the ultrathin flexible substrate, can reduce the area of devices to realize high-density chip integration, and has the advantages of higher sensitivity, small volume, low power consumption, high reliability, good temperature characteristic, integration and the like. The flexible GMR magnetic field sensor can be used for manufacturing micro magnetic sensor chips and arrays thereof of vehicle-mounted electronics, Internet of things, wearable equipment and the like.
Drawings
FIG. 1 is a cross-sectional view of the present invention.
Fig. 2 is a top view of the present invention.
FIG. 3 is a manufacturing flow chart of the present invention.
Wherein 1, a flexible substrate; 2 a first buffer layer; 3a pinning layer; 4 a pinned layer; 5, an isolating layer; 6 a free layer; 7 a conductive layer; 8 a second buffer layer.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
referring to fig. 1 to 3, a flexible GMR magnetic field sensor includes a flexible substrate 1, a giant magnetoresistance structure and a conductive layer 7; the giant magnetoresistance structure and the conducting layer 7 are both arranged on the upper surface of the flexible substrate, and the conducting layer 7 is arranged around the giant magnetoresistance structure; the giant magnetoresistance structure comprises a first buffer layer 2, a second buffer layer 8, a pinning layer 3, an isolation layer 5 and two ferromagnetic layers, wherein the two ferromagnetic layers are a pinned layer 4 and a free layer 6 respectively; the first buffer layer 2 is arranged on the upper surface of the flexible substrate, and the pinning layer 3, the pinned layer 4, the isolation layer 5, the free layer 6 and the second buffer layer 8 are sequentially arranged on the first buffer layer 2 from bottom to top to form a giant magnetoresistance structure.
The flexible substrate 1 is PET, PEN, PMMA or Kapton.
The conductive layer is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN or TiN.
The isolation layer is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti or Mo.
The free layer is one of CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo or CoNbZr.
The pinning layer is made of one antiferromagnetic material of IrMn, PtMn or FeMn; the pinned layer is made of one ferromagnetic material of CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo or CoNbZr; the buffer layer is Ta.
The conducting layer 7 is divided into four parts, and the conducting layer 7 is arranged on two sides of two end parts of the giant magnetoresistance structure.
A method of manufacturing a flexible GMR magnetic field sensor, comprising the steps of:
step 3, growing a giant magnetoresistance film, sequentially depositing the required target materials by adopting a magnetron sputtering technology, and growing a plurality of layers of giant magnetoresistance films in the whole reserved area;
and 7, stripping, and after sputtering is finished, removing the photoresist and the metal layer on the photoresist through a stripping process to form a conductive layer.
The step 2 specifically comprises the following operation processes:
gluing: spraying a layer of photoresist on a piezoelectric substrate, and drying in a 115 ℃ oven for 20min after coating the photoresist;
exposure: etching a required shape pattern on the photoresist by using ultraviolet exposure; firstly, attaching a mask plate to a film to be exposed, irradiating for 9s under ultraviolet laser, and then placing in an oven at 115 ℃ for 1 min;
and (3) developing: and (3) soaking the exposed piezoelectric substrate in a developing solution for 1min, and cleaning and drying the piezoelectric substrate by using deionized water after a pattern appears.
etching the needed magnetic resistance unit and array pattern on the photoresist, then developing and drying to complete the first photoetching; as shown in fig. 3 b.
Growing a giant magnetoresistance film, sequentially depositing the required target materials by adopting a magnetron sputtering technology, and growing a plurality of layers of giant magnetoresistance films in the whole reserved area; as in fig. 3 c.
Stripping, soaking in acetone solution, and removing the residual glue layer and the magneto-resistance film on the glue layer by a stripping process to form a reserved giant magneto-resistance unit and an array; as shown in fig. 3 d.
And 7, stripping, and removing the photoresist and the metal layer thereon by a stripping process to form a conductive layer after sputtering is finished. As in fig. 3 g.
Claims (9)
1. A flexible GMR magnetic field sensor comprising a flexible substrate (1), a giant magneto-resistive structure and a conductive layer (7); the giant magnetoresistance structure and the conducting layer (7) are both arranged on the upper surface of the flexible substrate, and the conducting layer (7) is arranged around the giant magnetoresistance structure; the giant magnetoresistance structure comprises a first buffer layer (2), a second buffer layer (8), a pinning layer (3), an isolation layer (5) and two ferromagnetic layers, wherein the two ferromagnetic layers are a pinned layer (4) and a free layer (6) respectively; the first buffer layer (2) is arranged on the upper surface of the flexible substrate, and the pinning layer (3), the pinned layer (4), the isolation layer (5), the free layer (6) and the second buffer layer (8) are sequentially arranged on the first buffer layer (2) from bottom to top to form a giant magnetoresistance structure.
2. A flexible GMR magnetic field sensor according to claim 1 wherein the flexible substrate is PET, PEN, PMMA or Kapton.
3. A flexible GMR magnetic field sensor according to claim 1, wherein the conductive layer is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN or TiN.
4. A flexible GMR magnetic field sensor according to claim 1 wherein the spacer layer is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti or Mo.
5. A flexible GMR magnetic field sensor according to claim 1 wherein the free layer is one of CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo or CoNbZr.
6. A flexible GMR magnetic field sensor according to claim 1 wherein the pinning layer is an antiferromagnetic material selected from IrMn, PtMn or FeMn; the pinned layer is made of one ferromagnetic material of CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo or CoNbZr; the buffer layer is Ta.
7. A flexible GMR magnetic field sensor according to claim 1 wherein the conductive layer is divided into four portions and the giant magnetoresistance structure has conductive layers disposed on both sides of both ends thereof.
8. A method for manufacturing a flexible GMR magnetic field sensor, based on any one of claims 1 to 7, comprising the steps of:
step 1, cleaning the surface of a flexible substrate by using isopropanol and deionized water, and using N2Drying;
step 2, coating a layer of photoresist on the flexible substrate, removing the photoresist layer outside the pattern by ultraviolet exposure, namely etching the required magnetoresistive unit and array pattern on the photoresist, and then developing and drying to complete the first photoetching;
step 3, growing a giant magnetoresistance film, sequentially depositing the required target materials by adopting a magnetron sputtering technology, and growing a plurality of layers of giant magnetoresistance films in the whole reserved area;
step 4, stripping, soaking in acetone solution, removing the residual glue layer and the unnecessary giant magnetoresistance film on the glue layer by a stripping process, and forming a reserved giant magnetoresistance unit and an array;
step 5, coating a layer of photoresist on the film, removing the photoresist layer outside the pattern by ultraviolet exposure, namely etching the required conductive layer pattern on the photoresist, and then developing and drying to complete the second photoetching;
step 6, growing a conductive layer, and sputtering a layer of conductive material as the conductive layer after the second photoetching;
and 7, stripping, and after sputtering is finished, removing the photoresist and the metal layer on the photoresist through a stripping process to form a conductive layer.
9. The method for preparing a flexible GMR magnetic field sensor according to claim 8, wherein the step 2 specifically comprises the following operation processes:
gluing: spraying a layer of photoresist on a piezoelectric substrate, and drying in a 115 ℃ oven for 20min after coating the photoresist;
exposure: etching a required shape pattern on the photoresist by using ultraviolet exposure; firstly, attaching a mask plate to a film to be exposed, irradiating for 9s under ultraviolet laser, and then placing in an oven at 115 ℃ for 1 min;
and (3) developing: and (3) soaking the exposed piezoelectric substrate in a developing solution for 1min, and cleaning and drying the piezoelectric substrate by using deionized water after a pattern appears.
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Cited By (2)
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| CN112490351A (en) * | 2020-11-19 | 2021-03-12 | 西安交通大学 | Flexible TMR magnetoresistive sensor and preparation method thereof |
| CN114509563A (en) * | 2022-04-18 | 2022-05-17 | 合肥工业大学 | Giant magnetoresistance sensor combined with microfluidic technology, and manufacturing method and application thereof |
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