CN110212085A - Adjustable giant magnetoresistance sensor of measurement range and preparation method thereof - Google Patents
Adjustable giant magnetoresistance sensor of measurement range and preparation method thereof Download PDFInfo
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- CN110212085A CN110212085A CN201910477142.XA CN201910477142A CN110212085A CN 110212085 A CN110212085 A CN 110212085A CN 201910477142 A CN201910477142 A CN 201910477142A CN 110212085 A CN110212085 A CN 110212085A
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Abstract
The adjustable giant magnetoresistance sensor of measurement range, including substrate, giant magnetoresistance structure and conductive layer；Giant magnetoresistance structure and conductive layer are arranged at upper surface of substrate, and conductive layer is arranged in around giant magnetoresistance structure；Giant magnetoresistance structure includes first buffer layer, second buffer layer, pinning layer, separation layer and two ferromagnetic layers, and two ferromagnetic layers are respectively nailed layer and free layer；First buffer layer setting sets gradually pinning layer, nailed layer, separation layer, free layer and second buffer layer from bottom to top on upper surface of substrate, first buffer layer, forms giant magnetoresistance structure.The present invention utilizes the electric field regulating effect of magnetic anisotropy field in magnetic electric compound material, the adjusting using electric field to the direction of magnetization of free layer in giant magnetoresistance structure is realized for the first time, has many advantages, such as higher sensitivity, small in size, low in energy consumption, high reliablity, good temp characteristic, integrability.And this principle is applied in giant magnetoresistance sensor for the first time, realize greatly improving and continuously adjusting for giant magnetoresistance sensor linear output range.The adjustable giant magnetoresistance sensor of measurement range can be used for the miniature magnetic sensor chip such as vehicle electronics, Internet of Things and wearable device.
Description
Technical field
The invention belongs to giant magnetoresistance sensor technical fields, the in particular to adjustable giant magnetoresistance sensor of measurement range
And preparation method thereof.
Background technique
Sensor has the functions such as perception, acquisition, conversion, transmission and the processing of information, has become automatic detect, automatically
Indispensable important electronic component in control system.From M.N.Baibith in 1988 in (Fe/Cr) n superlattice multilayer film
It was found that after giant magnetoresistance (Giant Magnetoresistance, GMR) effect, the basis of giant magnetoresistance effect and its material
Research and application study rapidly become hot spot concerned by people.Currently, GMR material Magnetic Sensor, computer magnetic reading head,
The fields such as MAGNETIC RANDOM ACCESS MEMORY obtain commercial applications.The appearance of GMR material has caused the upgrading of magnetic sensor,
Due to its high sensitivity to low field, it is very suitable for the measurement of angle in industrial control field, position, revolving speed etc., and is used for
High-density storage media is manufactured, noncontact position measuring system, traffic speed detection, biological detection, electric system are widely used in
Equal multiple fields.The appearance of giant magnetoresistance sensor, make traditional Magnetic Sensor include hall device, semiconductor magnetic-sensing resistor and
Magnetodiode, triode and anisotropic magnetoresistance sensor etc. are faced with formidable challenges.Compared with traditional sensors, GMR
Sensor has many advantages, such as higher sensitivity, small in size, low in energy consumption, high reliablity, good temp characteristic, integrability, make its
Occupation rate of market in magnetic sensor is increasing.
Giant magnetoresistance effect is deposited when referring to the resistivity of magnetic material when there is external magnetic field compared with no external magnetic field
The great variety the phenomenon that.Giant magnetoresistance is a kind of quantum mechanical effects, it results from the magnetic film structure of stratiform, this knot
Structure is to be interlaminated to be formed by stacking by ferromagnetic material and nonferromagnetic material.When the magnetic moment of two adjacent ferromagnetic layers is parallel to each other
When, the scattering of carrier and spin dependence is minimum, and material has the smallest resistance；When the magnetic moment of two adjacent ferromagnetic layers is anti-flat
Most strong with the scattering of spin dependence when row, the resistance of material is maximum.The direction of ferromagnetic material magnetic moment is the outer magnetic by being added to material
Field control.The general exchange bias effect using antiferromagnet carries out pinning to the direction of magnetization of wherein one layer of ferromagnetic layer,
Prevent it from freely turning to；And another ferromagnetic layer can occur freely turn to externally-applied magnetic field, referred to as free layer.When external magnetic field is more than
When the coercive field of free layer, the Parallel and antiparallel two states of the direction of magnetization may be implemented, generate the minimum and pole of magneto-resistor
Big value.There is linear relationship between magneto-resistor extreme value and external magnetic field, therefore can be used for measuring the size of external magnetic field.As it can be seen that huge magnetic
The linear measurement range of electric resistance sensor is limited to the coercive field of free layer.Generally smaller using coercivity and giant magnetoresistance effect
Free layer of the more significant material as giant magnetoresistance, such as Co, Fe, CoFe, NiFeCo, CoFeB, CoNbZr, it is linear to survey
Range is measured generally between tens Gausses, has seriously affected the scope of application of magnetic resistance sensor.
Summary of the invention
The purpose of the present invention is to provide adjustable giant magnetoresistance sensors of measurement range and preparation method thereof, on solving
State problem.
To achieve the above object, the invention adopts the following technical scheme:
The adjustable giant magnetoresistance sensor of measurement range, including substrate, giant magnetoresistance structure and conductive layer；Giant magnetoresistance knot
Structure and conductive layer are arranged at upper surface of substrate, and conductive layer is arranged in around giant magnetoresistance structure；
Giant magnetoresistance structure includes first buffer layer, second buffer layer, pinning layer, separation layer and two ferromagnetic layers, and two
Ferromagnetic layer is respectively nailed layer and free layer；First buffer layer is arranged on upper surface of substrate, first buffer layer from bottom to top
Pinning layer, nailed layer, separation layer, free layer and second buffer layer are set gradually, giant magnetoresistance structure is formed.
Further, conductive layer is divided into four parts, and the two sides of two ends of giant magnetoresistance structure are provided with conductive layer.
Further, substrate includes substrate hearth electrode, piezoelectric material and substrate top electrode, and substrate top electrode and substrate bottom are electric
Pole is separately positioned on the upper and lower surfaces of piezoelectric material.
Further, piezoelectric material PMN-PT, PZN-PT, PIN-PMN-PT, Sm doping PMN-PT, PZT,
PbTiO3、PbNbO3、PVDF、LiNbO3、TiSrO3One of piezoelectric ceramics.
Further, substrate top electrode and substrate hearth electrode and conductive layer be Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo,
One of TaN or TiN conductive material.
Further, one of separation layer Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo non-magnetic material；
Further, free layer CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo,
One of CoNbZr ferrimagnet.
Further, one of pinning layer IrMn, PtMn, FeMn antiferromagnet；Nailed layer be CoFe,
One of CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo, CoNbZr ferrimagnet；Buffer layer is
Ta。
Further, the preparation method of the adjustable giant magnetoresistance sensor of measurement range, comprising the following steps:
Step 1: surface clean being carried out using isopropanol and deionized water to a substrate, is dried up with N2；
Step 2: coating a layer photoresist in above-mentioned piezoelectric substrate, the photoresist layer outside pattern is gone with ultraviolet exposure
Fall, i.e., then magnetoresistive cell required for engraving on a photoresist and array pattern develop and dry, complete first time photoetching；
Step 3: required target is deposited by growth giant magnet resistance film in order using magnetron sputtering technique,
Entire reserved area grows multilayer giant magnet resistance film；
Step 4: removing impregnates in acetone soln, removes the magnetic above remaining glue-line and glue-line by stripping technology
Resistance film forms reserved giant magnetoresistance unit and array；
Step 5: a layer photoresist is coated on the above-mentioned films, and the photoresist layer outside pattern is removed with ultraviolet exposure,
Required conducting layer figure is engraved on a photoresist, then develops and dries, and completes second of photoetching；
Step 6: conductive layer growth after the completion of second of photoetching, sputters layer of conductive material as conductive layer；
Step 7: removing, after sputtering, metal layer by stripping technology removal photoresist and thereon forms conductive layer.
Further, step 2 specifically includes following operating process:
Gluing: spraying a layer photoresist in piezoelectric substrate, and gluing is placed in 115 DEG C of baking oven and dries 20min；
Exposure: the shape pattern of needs is engraved on a photoresist using ultraviolet exposure；Mask is fitted in first and is wanted
On the film of exposure, 9s then is irradiated under ultraviolet laser, is placed on 1min in 115 DEG C of baking oven；
Development: the piezoelectric substrate after above-mentioned exposure is placed in developer solution and impregnates 1min, after there is figure, uses deionized water
It cleans and dries.
Compared with prior art, the present invention has following technical effect:
The present invention utilizes the electric field regulating effect of magnetic anisotropy field in magnetic electric compound material, by adding to PMN-PT substrate
Voltage, since piezoelectric effect PMN-PT can be strained, the strain of generation is transmitted to the GMR structure closed on, due in GMR structure
Magnetic material has magnetostrictive effect, and stress will change the magnetic anisotropy field of magnetic material.When there is external magnetic field, due to
The influence of additional anisotropy field, free layer reversal rate caused by PMN-PT stress slow down, corresponding magneto-resistor variation
Speed slows down, and the magnetic field for reaching saturation increases, it is thus achieved that the increase of the range of linearity.The present invention is realized for the first time using electric field
Adjusting to the direction of magnetization of free layer in giant magnetoresistance structure, have sensitivity is higher, small in size, low in energy consumption, high reliablity,
The advantages that good temp characteristic, integrability.And this principle is applied in giant magnetoresistance sensor for the first time, realize giant magnetoresistance
Linear sensor output area greatly improving and continuously adjusting.Can electric field regulation measurement range giant magnetoresistance sensor it is available
In the manufacture of the miniature magnetic sensor chip such as vehicle electronics, Internet of Things and wearable device and its array.
Detailed description of the invention
Fig. 1 is sectional view of the invention.
Fig. 2 is top view of the invention.
Fig. 3 is production flow diagram of the invention.
Fig. 4 is using PMN-PT as the test image of piezoelectric material.
Wherein: 1, substrate hearth electrode；2, piezoelectric material；3, substrate top electrode；4, first buffer layer；5, pinning layer；6, quilt
Pinning layer；7, separation layer；8, free layer；9, conductive layer；10, second buffer layer.
Specific embodiment
Below in conjunction with attached drawing, the present invention is further described:
It please refers to Fig.1 to Fig.3, the adjustable giant magnetoresistance sensor of measurement range, which is characterized in that including substrate, huge magnetic
Electric resistance structure and conductive layer 9；Giant magnetoresistance structure and conductive layer 9 are arranged at upper surface of substrate, and conductive layer 9 is arranged in huge magnetic
Around electric resistance structure；
Giant magnetoresistance structure includes first buffer layer 4, second buffer layer 10, pinning layer 5, separation layer 7 and two ferromagnetic layers,
Two ferromagnetic layers are respectively nailed layer 6 and free layer 8；First buffer layer 4 is arranged on upper surface of substrate, first buffer layer 4
Pinning layer 5, nailed layer 6, separation layer 7, free layer 8 and second buffer layer 10 are set gradually from bottom to top, form giant magnetoresistance
Structure.
Conductive layer 9 divides for four parts, and the two sides of two ends of giant magnetoresistance structure are provided with conductive layer 9.
Substrate includes substrate hearth electrode 1, piezoelectric material 2 and substrate top electrode 3, and substrate top electrode 3 and substrate hearth electrode 1 divide
The upper and lower surfaces of piezoelectric material 2 are not set.
Piezoelectric material is PMN-PT, PZT, PbTiO of PMN-PT, PZN-PT, PIN-PMN-PT, Sm doping3、PbNbO3、
PVDF、LiNbO3、TiSrO3One of piezoelectric ceramics.
Substrate top electrode 3 and substrate hearth electrode 1 and conductive layer 9 are Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN or TiN
One of conductive material.
Separation layer is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo non-magnetic material；
Free layer is one in CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo, CoNbZr
Kind ferrimagnet.
Pinning layer is one of IrMn, PtMn, FeMn antiferromagnet；Nailed layer be CoFe, CoFe/Ru/CoFe,
One of NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo, CoNbZr ferrimagnet；Buffer layer is Ta.
The preparation method of the adjustable giant magnetoresistance sensor of measurement range, comprising the following steps:
Step 1: surface clean being carried out using isopropanol and deionized water to a substrate, is dried up with N2；Such as Fig. 3 a.
Step 2: coating a layer photoresist in above-mentioned piezoelectric substrate, the photoresist layer outside pattern is gone with ultraviolet exposure
Fall, i.e., then magnetoresistive cell required for engraving on a photoresist and array pattern develop and dry, complete first time photoetching；
Such as Fig. 3 b.
Step 3: required target is deposited by growth giant magnet resistance film in order using magnetron sputtering technique,
Entire reserved area grows multilayer giant magnet resistance film；Such as Fig. 3 c.
Step 4: removing impregnates in acetone soln, removes the magnetic above remaining glue-line and glue-line by stripping technology
Resistance film forms reserved giant magnetoresistance unit and array；Such as Fig. 3 d.
Step 5: a layer photoresist is coated on the above-mentioned films, and the photoresist layer outside pattern is removed with ultraviolet exposure,
Required conducting layer figure is engraved on a photoresist, then develops and dries, and completes second of photoetching；Such as Fig. 3 e.
Step 6: conductive layer growth after the completion of second of photoetching, sputters layer of conductive material as conductive layer；Such as Fig. 3 f.
Step 7: removing, after sputtering, metal layer by stripping technology removal photoresist and thereon forms conductive layer.
Such as Fig. 3 g.
Step 2 specifically includes following operating process:
Gluing: spraying a layer photoresist in piezoelectric substrate, and gluing is placed in 115 DEG C of baking oven and dries 20min；
Exposure: the shape pattern of needs is engraved on a photoresist using ultraviolet exposure；Mask is fitted in first and is wanted
On the film of exposure, 9s then is irradiated under ultraviolet laser, is placed on 1min in 115 DEG C of baking oven；
Development: the piezoelectric substrate after above-mentioned exposure is placed in developer solution and impregnates 1min, after there is figure, uses deionized water
It cleans and dries.
Fig. 4 is using PMN-PT as piezoelectric material, the by substrate top electrode and substrate hearth electrode and conductive layer, Ru of Au
One buffer layer and second buffer layer, IrMn are pinning layer, CoFe is nailed layer and free layer, Cu are the GMR sensing of separation layer
The hysteresis loop (Fig. 4 a) and magnetic resistance change rate curve (Fig. 4 b) of device.As shown in figure 4, do not give PMN-PT making alive before, magnetic field from
High-Field reduce during, before this nailed layer direction first overturn extremely and reverse magnetic field, free layer direction is constant at this time, the two side
To antiparallel, magneto-resistor reaches maximum；Both magnetic field continues to be reduced near zero field, and free layer direction is also flipped, at this time
Direction is parallel, and magneto-resistor reaches minimum.Due to there is several places to be mutated in change curve, so that the range of linearity is smaller.Giving PMN-PT
After upper making alive, during changes of magnetic field, additional anisotropy field becomes magneto-resistor to the response of external magnetic field
Slowly, so as to avoid magnetic resistance mutation, keep change curve more smooth, the range of linearity increases.
Claims (10)
1. the adjustable giant magnetoresistance sensor of measurement range, which is characterized in that including substrate, giant magnetoresistance structure and conductive layer
(9)；Giant magnetoresistance structure and conductive layer (9) are arranged at upper surface of substrate, and giant magnetoresistance structure is arranged in conductive layer (9)
Around；
Giant magnetoresistance structure includes first buffer layer (4), second buffer layer (10), pinning layer (5), separation layer (7) and two iron
Magnetosphere, two ferromagnetic layers are respectively nailed layer (6) and free layer (8)；First buffer layer (4) is arranged in upper surface of substrate, the
Pinning layer (5), nailed layer (6), separation layer (7), free layer (8) and second are set gradually on one buffer layer (4) from bottom to top
Buffer layer (10) forms giant magnetoresistance structure.
2. the adjustable giant magnetoresistance sensor of measurement range according to claim 1, which is characterized in that conductive layer (9) point
For four parts, the two sides of two ends of giant magnetoresistance structure are provided with conductive layer (9).
3. the adjustable giant magnetoresistance sensor of measurement range according to claim 1, which is characterized in that substrate includes substrate
Hearth electrode (1), piezoelectric material (2) and substrate top electrode (3), substrate top electrode (3) and substrate hearth electrode (1) are separately positioned on pressure
The upper and lower surfaces of electric material (2).
4. the adjustable giant magnetoresistance sensor of measurement range according to claim 3, which is characterized in that piezoelectric material is
PMN-PT, PZT, PbTiO of PMN-PT, PZN-PT, PIN-PMN-PT, Sm doping3、PbNbO3、PVDF、LiNbO3、TiSrO3In
A kind of piezoelectric ceramics.
5. the adjustable giant magnetoresistance sensor of measurement range according to claim 3, which is characterized in that substrate top electrode and
Substrate hearth electrode and conductive layer are one of Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN or TiN conductive material.
6. the adjustable giant magnetoresistance sensor of measurement range according to claim 1, which is characterized in that separation layer Ta,
One of Au, Ag, Al, Cu, Pt, W, Ti, Mo non-magnetic material；
7. the adjustable giant magnetoresistance sensor of measurement range according to claim 1, which is characterized in that free layer is
One of CoFe, CoFe/Ru/CoFe, NiFe, CoFeB, FeGaB, Co, Fe, NiFeCo, CoNbZr ferrimagnet.
8. the adjustable giant magnetoresistance sensor of measurement range according to claim 1, which is characterized in that pinning layer is
One of IrMn, PtMn, FeMn antiferromagnet；Nailed layer be CoFe, CoFe/Ru/CoFe, NiFe, CoFeB,
One of FeGaB, Co, Fe, NiFeCo, CoNbZr ferrimagnet；Buffer layer is Ta.
9. the preparation method of the adjustable giant magnetoresistance sensor of measurement range, which is characterized in that any based on claim 1 to 8
The adjustable giant magnetoresistance sensor of measurement range described in one, comprising the following steps:
Step 1: surface clean being carried out using isopropanol and deionized water to a substrate, is dried up with N2；
Step 2: a layer photoresist is coated in above-mentioned piezoelectric substrate, and the photoresist layer outside pattern is removed with ultraviolet exposure,
Magnetoresistive cell required for engraving on a photoresist and array pattern, then develop and dry, and complete first time photoetching；
Step 3: required target is deposited, using magnetron sputtering technique entire by growth giant magnet resistance film in order
Reserved area grows multilayer giant magnet resistance film；
Step 4: removing impregnates in acetone soln, removes the magneto-resistor above remaining glue-line and glue-line by stripping technology
Film forms reserved giant magnetoresistance unit and array；
Step 5: coating a layer photoresist on the above-mentioned films, the photoresist layer outside pattern is removed with ultraviolet exposure, that is, is existed
Required conducting layer figure is engraved on photoresist, then develops and dries, and completes second of photoetching；
Step 6: conductive layer growth after the completion of second of photoetching, sputters layer of conductive material as conductive layer；
Step 7: removing, after sputtering, metal layer by stripping technology removal photoresist and thereon forms conductive layer.
10. the preparation method of the adjustable giant magnetoresistance sensor of measurement range according to claim 9, which is characterized in that
Step 2 specifically includes following operating process:
Gluing: spraying a layer photoresist in piezoelectric substrate, and gluing is placed in 115 DEG C of baking oven and dries 20min；
Exposure: the shape pattern of needs is engraved on a photoresist using ultraviolet exposure；Mask, which is fitted in, first to expose
Film on, then irradiate 9s under ultraviolet laser, be placed on 1min in 115 DEG C of baking oven；
Development: the piezoelectric substrate after above-mentioned exposure is placed in developer solution and impregnates 1min, after there is figure, is cleaned with deionized water
And it dries.
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| CN111430535A (en) * | 2020-03-19 | 2020-07-17 | 西安交通大学 | GMR magnetic field sensor with adjustable testing sensitivity direction and preparation method thereof |
| CN112289924A (en) * | 2020-11-05 | 2021-01-29 | 歌尔微电子有限公司 | Method for manufacturing magnetic sensor |
| CN113466754A (en) * | 2021-07-01 | 2021-10-01 | 中国科学院空天信息创新研究院 | Neural magnetic pole and preparation method thereof |
| CN113866691A (en) * | 2021-12-02 | 2021-12-31 | 北京芯可鉴科技有限公司 | Tunneling magnetoresistance sensor and preparation method and use method thereof |
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| CN110777342A (en) * | 2019-10-22 | 2020-02-11 | 有研工程技术研究院有限公司 | Magnetostrictive film and preparation method thereof |
| CN111312891A (en) * | 2020-02-24 | 2020-06-19 | 西安交通大学 | Flexible GMR magnetic field sensor and preparation method thereof |
| CN111430535A (en) * | 2020-03-19 | 2020-07-17 | 西安交通大学 | GMR magnetic field sensor with adjustable testing sensitivity direction and preparation method thereof |
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| CN113466754A (en) * | 2021-07-01 | 2021-10-01 | 中国科学院空天信息创新研究院 | Neural magnetic pole and preparation method thereof |
| CN113466754B (en) * | 2021-07-01 | 2023-09-05 | 中国科学院空天信息创新研究院 | Neural pole and preparation method thereof |
| CN113866691A (en) * | 2021-12-02 | 2021-12-31 | 北京芯可鉴科技有限公司 | Tunneling magnetoresistance sensor and preparation method and use method thereof |
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