CN113466754B - Neural pole and preparation method thereof - Google Patents
Neural pole and preparation method thereof Download PDFInfo
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/24—Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
- A61B5/242—Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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Abstract
The present disclosure provides a neural pole comprising: at least one magnetoresistive sensor component and an electrode; at least one magnetic resistance sensor component is uniformly distributed on the substrate; the magnetoresistive sensor component comprises at least one magnetoresistive sensor which are mutually connected in series, and the at least one magnetoresistive sensor is vertically stacked; the electrode and the magnetic resistance sensor are connected with the contact through a lead. The method has the advantages of multiple sensitivity directions, high sensitivity and low noise, and has great scientific significance for enriching neuroscience research means and improving the magnetic field measurement level.
Description
Technical Field
The present disclosure relates to the field of microelectronics, and more particularly to a neural pole and a method of making the same.
Background
The brain rapidly transmits information in a complex time pattern in a neuronal network through neuronal cells, knowing how the brain works in life sciences, especially neurophysiology, is a challenging task. Notably, neuronal activity produces a magnetic field while producing a current, and magnetic signals have unique advantages and significance over electrical signals. The non-invasive, non-invasive detection and imaging of cerebral magnetic fields by means of a Magnetoencephalography (MEG) is possible on a macroscopic scale, with ultra-high temporal resolution on the order of sub-milliseconds, but due to the lack of tools for local magnetic recording the interpretation of MEG signals is based essentially on the assumption of non-validated local source properties.
To solve this problem, the concept of "neural magnetic pole" is proposed for detection of magnetic field generated by neuron activity, like neural electrodes, which enables detection of magnetic signals at room temperature, small size, and low power consumption based on magnetoresistive sensors. In order to improve the sensitivity of magnetic field detection and reduce 1/f noise, the traditional device generally adopts a method of connecting two-dimensional planes in series to form an array, but is obviously not suitable for nerve magnetic poles, and the method not only can reduce the spatial resolution which is critical for local measurement, but also can seriously damage biological tissues and influence the detection of magnetic signals due to the overlarge occupied area.
On the other hand, one of the advantages of magnetic signals is that vector information about the magnitude and direction of the current source can be obtained by providing magnetoresistive sensors of different sensitive directions. In the prior art, at most two orthogonal sensitive directions can be set, and the implementation method is that voltage pulses are used under a strong magnetic field, and the reference layer (also called a pinning layer) of one magnetoresistive sensor is rebinned by joule heating, so that the aim of redirecting the local magnetization direction is fulfilled. However, this technique is less selective and controllable, and the joule heat generated by the application of the high voltage pulses not only degrades the performance of the redirected magnetoresistive sensor, but also inevitably affects the performance of other devices around.
Disclosure of Invention
First, the technical problem to be solved
The present disclosure provides a neural pole and a method of manufacturing the same to solve the technical problems set forth above.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a neural pole comprising:
at least one magnetic resistance sensor component which is uniformly distributed on the substrate; the magnetoresistive sensor component comprises at least one magnetoresistive sensor which is mutually connected in series, and at least one magnetoresistive sensor is vertically stacked; and
and the electrode is connected with the magnetoresistive sensor through a lead wire and a contact.
In some embodiments of the present disclosure, the direction of sensitivity of one of the magnetoresistive sensor components fixes the magnetization direction of the reference layer by annealing.
In some embodiments of the present disclosure, the magnetoresistive sensor sequentially comprises, from bottom to top: a bottom electrode layer, a free layer, an intermediate layer, a reference layer, and a top electrode layer; or alternatively
The magnetoresistive sensor comprises the following components in sequence from bottom to top: a bottom electrode layer, a reference layer, an intermediate layer, a free layer, and a top electrode layer.
In some embodiments of the present disclosure, the reference layer has a fixed magnetization direction, and the reference layer material is one or more of IrMn, ptMn, feMn.
In some embodiments of the present disclosure, the free layer material is one or more of CoFe, coFe/Ru/CoFe, niFe, coFeB, feGaB, co, fe, niFeCo, coNbZr.
In some embodiments of the present disclosure, the material of the intermediate layer is one or more of aluminum oxide, magnesium aluminum oxide, magnesium gallium oxide, and magnesium zinc oxide.
In some embodiments of the present disclosure, the material of the bottom electrode layer and the top electrode layer is one or more of Ta, au, ag, al, cu, pt, W, ti, mo, taN and TiN.
In some embodiments of the present disclosure, the magnetoresistive sensor is in the shape of a 5-segment fold 40-50 μm long by 3-6 μm wide, or a yoke 1-6 μm wide by 40-120 μm long.
In some embodiments of the present disclosure, the material of the electrode is a biocompatible metal or metal oxide; the shape of the electrode is square with the side length of 10-50 mu m.
According to one aspect of the present disclosure, there is also provided a method of preparing a neural pole, including:
depositing the magnetoresistive sensor component on the substrate by magnetron sputtering; the magnetoresistive sensor component comprises at least one magnetoresistive sensor which are mutually connected in series, and the at least one magnetoresistive sensor is vertically stacked;
photoetching and etching to a bottom electrode layer at the bottommost part in the magnetoresistive sensor component, defining the shape of the magnetoresistive sensor and exposing the bottom electrode layer;
sputtering and etching the passivation layer to expose the top electrode layer and the bottom electrode layer of the magnetoresistive sensor;
defining a sensitive direction by annealing;
defining the shape of the electrodes and leads;
deep reactive ions etch the shape of the neural pole.
(III) beneficial effects
As can be seen from the technical scheme, the neural pole and the preparation method thereof have at least one or a part of the following beneficial effects:
(1) The design of the nerve magnetic pole based on the three-dimensional series magneto-resistance sensor enables current to vertically pass through the membrane surface, so that the shunt effect of the non-magnetic metal layer is eliminated, and the forced conduction electrons must pass through all interfaces to generate stronger spin-dependent scattering, so that the larger magneto-resistance effect can be obtained, and the magnetic field detection sensitivity of the nerve magnetic pole is further improved.
(2) The magnetic resistance sensor structure breaks through the limitation of large occupation area of the two-dimensional plane series connection of the traditional magnetic resistance sensor, reduces device noise on the premise of guaranteeing spatial resolution through vertically stacking a plurality of magnetic resistance sensors, and improves magnetic field detection sensitivity.
(3) The method can obtain vector information of the size and the direction of the nerve current source signal by setting the magnetic resistance sensor with multiple sensitive directions through laser pulse local annealing, and can accurately position the source of neuron activity in the brain at a given moment.
Drawings
Fig. 1 is a schematic diagram of a neural pole according to an embodiment of the present disclosure.
FIG. 2 is a schematic diagram of the magnetoresistive sensor component of FIG. 1.
Fig. 3 is a schematic diagram of a method of preparing a neuromagnetic pole according to an embodiment of the present disclosure.
[ in the drawings, the main reference numerals of the embodiments of the present disclosure ]
A 1-magnetoresistive sensor component;
a 10-magnetoresistive sensor;
101-a bottom electrode layer;
102-a free layer;
103-an intermediate layer;
104-a reference layer;
2-electrodes;
3-lead wire.
Detailed Description
The present disclosure provides a neural pole comprising: at least one magnetoresistive sensor component and an electrode; at least one magnetic resistance sensor component is uniformly distributed on the substrate; the magnetoresistive sensor component comprises at least one magnetoresistive sensor which are mutually connected in series, and the at least one magnetoresistive sensor is vertically stacked; the electrode and the magnetic resistance sensor are connected with the contact through a lead. The method has the advantages of multiple sensitivity directions, high sensitivity and low noise, and has great scientific significance for enriching neuroscience research means and improving the magnetic field measurement level.
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a neural pole is provided. Fig. 1 is a schematic diagram of a neural pole according to an embodiment of the present disclosure. As shown in fig. 1, the disclosed neural pole includes: at least one magnetoresistive sensor component 1 and an electrode 2; at least one magnetoresistive sensor component 1 is uniformly distributed on the substrate; the magnetoresistive sensor component 1 comprises at least one magnetoresistive sensor 10 connected in series with each other, and the at least one magnetoresistive sensor 10 is vertically stacked; the electrode 2 and the magnetoresistive sensor 10 are connected to contacts via leads 3. The sensor is in the shape of a fold of 40-50 μm long and 3-6 μm wide, or a yoke of 1-6 μm wide and 40-120 μm long.
The respective constituent parts of the neural pole of the present embodiment are described in detail below, respectively.
As shown in fig. 2, the magnetoresistive sensor 10 can be a tunneling magnetoresistive sensor or a giant magnetoresistive sensor, and has the advantages of high sensitivity and low power consumption at room temperature. The structure of the single magnetoresistive sensor 10 includes: a bottom electrode layer 101, a free layer 102, an intermediate layer 103, a reference layer 104, a top electrode layer. In other embodiments the positions of the free layer 102 and the reference layer 104 may be reversed.
Regarding the bottom electrode layer 101 and the top electrode layer, in the stack structure provided in the embodiment, the top electrode layer of the lower magnetoresistive sensor 10 may be used as the bottom electrode layer 101 of the adjacent upper magnetoresistive sensor 10 at the same time, so that one bottom electrode layer 101 or the top electrode layer is reduced. The material of the bottom electrode layer 101 and the top electrode layer is typically one of Ta, au, ag, al, cu, pt, W, ti, mo, taN or TiN conductive material.
The reference layer 104 has a fixed magnetization direction, which is not affected by the external magnetic field direction, and the material of the reference layer 104 is typically an antiferromagnetic material in IrMn, ptMn, feMn.
The magnetic field direction of the free layer 102 will change along with the change of the external parallel magnetic field direction, and the material of the free layer 102 is one ferromagnetic material of CoFe and CoFe/Ru/CoFe, niFe, coFeB, feGaB, co, fe, niFeCo, coNbZr.
The choice of material for the intermediate layer 103 is different in the tunnel magnetoresistive sensor and the giant magnetoresistive sensor. In the tunnel magnetoresistive sensor, the intermediate layer 103 is provided as an insulating layer, and in this case, the material of the intermediate layer 103 is generally composed of an oxide including aluminum oxide, magnesium aluminum oxide, magnesium gallium oxide, magnesium zinc oxide, and the like. In the giant magnetoresistance sensor, the intermediate layer 103 serves as a nonmagnetic layer, and the material of the intermediate layer 103 is generally composed of copper, silver, a copper-zinc alloy, a silver-zinc alloy, or a silver-magnesium alloy.
When the traditional giant magnetoresistance sensor works, current is input from electrodes deposited on two sides of the multilayer film structure and passes along the film surface direction, and at the moment, the giant magnetoresistance sensors can only be connected in parallel in a vertical stacking way, so that the purpose of noise reduction cannot be achieved. In this embodiment, the bottom electrode layer 101 and the top electrode layer are disposed on the upper and lower sides of the magnetic layer, so that current flows through the film surface vertically, not only can a larger giant magnetoresistance effect be obtained, but also the series connection can be realized directly through vertical stacking on the premise of ensuring that the occupied area is not increased. Furthermore, a small number of magnetoresistive sensors 10 can be connected in series with the two-dimensional plane under the condition that the occupied area of the magnetic poles is allowed, and a large number of magnetoresistive sensors 10 are vertically stacked in series, so that the design of three-dimensional series connection of the magnetic poles of a plurality of magnetoresistive sensors is realized.
The sensitive direction of magnetoresistive sensor 10 is defined by the magnetization direction of fixed reference layer 104 by annealing at a given applied magnetic field and temperature. When annealing, firstly, the nerve magnetic pole is placed in a high-temperature magnetic field annealing furnace, annealing is carried out under the given conditions of an external magnetic field and temperature, and all the magneto-resistance sensors are defined as one same sensitive direction. Wherein the magnetic field, temperature and annealing time applied by the anneal are determined according to the relevant characteristics such as the curie temperature of the selected material.
Then, under the given external magnetic field condition, laser pulses are used for carrying out local annealing on different magnetoresistive sensor components 1 in a two-dimensional plane in sequence, so that the redirection of the magnetization direction of the reference layer 104 is realized, and then different sensitive directions are set, and the dynamic light spots and the variable laser energy selectively heat the reference layer 104 in each magnetoresistive sensor component 1, so that the method has the advantages of good uniformity, high controllability and random sensitive directions.
The electrode 2 is used for detecting nerve electric signals, and comparing the detected electric signals with magnetic signals can judge whether the sensor signals are abnormal or not. The electrode 2 is generally made of a biocompatible metal or metal oxide, such as Pt, au, platinum alloy, gold alloy, etc., and has a square shape with a side length of 10-50 μm.
The lead 3 is used for leading out the bottom electrode layer 101, the top electrode layer and the electrode 2 of the magnetoresistive sensor to the tail part of the nerve magnetic pole, so that the subsequent connection with the PCB is facilitated. Metals or metal oxides with good biocompatibility, such as Pt, au, platinum alloy, gold alloy, etc., are generally selected, and the thickness is 150-400nm.
The surface of the whole nerve magnetic pole is covered with an insulating layer except the electrode 2, and the insulating layer is used for insulating the whole nerve magnetic pole and preventing the device from being corroded by a medium to fail when the device is used in biological tissues. The material of the insulating layer may be selected from one or more of silicon dioxide, silicon nitride, silicon oxynitride, aluminum oxide, SU8, polyimide, or parylene.
In a first exemplary embodiment of the present disclosure, a method of preparing a neural pole is provided. Fig. 3 is a schematic diagram of a method of preparing a neuromagnetic pole according to an embodiment of the present disclosure. As shown in fig. 3, the preparation method of the neural pole of the present disclosure includes: operations S301 to S311.
Operation S301, cleaning the substrate with acetone, absolute ethanol and deionized water in sequenceBy N 2 And (5) blow-drying.
Operation S302, magnetron sputter depositing the magnetoresistive sensor component on the substrate; the magnetoresistive sensor component includes at least one magnetoresistive sensor connected in series with each other, and the at least one magnetoresistive sensor is vertically stacked.
In operation S303, the bottom electrode layer at the bottom of the magnetoresistive sensor component is etched and patterned to define the shape of the magnetoresistive sensor and expose the bottom electrode layer.
In operation S304, a passivation layer is sputtered to prevent oxidation of each magnetic layer of the sensor and to prevent shorting between two adjacent magnetic layers.
In operation S305, the passivation layer is etched to expose the top electrode layer and the bottom electrode layer of the magnetoresistive sensor.
In operation S306, the high temperature magnetic field annealing furnace annealer anneals defined sensitive directions.
In operation S307, a metal or metal oxide is vapor deposited.
In operation S308, the Lift-off process defines the shape of the electrodes and leads.
In operation S309, an insulating layer is deposited, and windows are etched and etched.
In operation S310, deep Reactive Ion Etching (DRIE) defines the shape of the final neural pole.
In operation S311, the light pulse locally anneals to redirect the plurality of sensitive directions.
Thus, embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that, in the drawings or the text of the specification, implementations not shown or described are all forms known to those of ordinary skill in the art, and not described in detail. Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be simply modified or replaced by those of ordinary skill in the art.
From the foregoing description, one skilled in the art will be able to clearly recognize the neural pole of the present disclosure and methods of making the same.
In summary, the present disclosure provides a design of a neural magnetic pole based on a three-dimensional serial magnetoresistive sensor, so that current passes through a membrane surface perpendicularly, a shunt effect of a non-magnetic metal layer is eliminated, and conduction electrons must pass through all interfaces to generate stronger spin-dependent scattering, so that a larger magnetoresistive effect can be obtained, and further, the magnetic field detection sensitivity of the neural magnetic pole is improved, which has great scientific significance for enriching neuroscience research means and improving the magnetic field measurement level.
It should be further noted that, the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings, and are not intended to limit the scope of the present disclosure. Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or constructions will be omitted when they may cause confusion in understanding the present disclosure.
And the shapes and dimensions of the various elements in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. In addition, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise known, numerical parameters in this specification and the appended claims are approximations that may vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". In general, the meaning of expression is meant to include a variation of + -10% in some embodiments, a variation of + -5% in some embodiments, a variation of + -1% in some embodiments, and a variation of + -0.5% in some embodiments by a particular amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
Similarly, it should be appreciated that in the above description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be construed as reflecting the intention that: i.e., the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (2)
1. A neural pole, comprising:
at least one magnetic resistance sensor component which is uniformly distributed on the substrate; the magnetoresistive sensor component comprises at least one magnetoresistive sensor which is mutually connected in series, and at least one magnetoresistive sensor is vertically stacked; and
the electrode is connected with the magnetoresistive sensor through a lead wire and a contact;
wherein the sensitive direction of one magneto-resistance sensor component is annealed to fix a plurality of sensitive magnetization directions of the reference layer, wherein the annealing is performed under the preset external magnetic field intensity and the preset temperature, and the annealing is performed locally by laser pulse;
wherein, the magneto-resistance sensor includes from bottom to top in order: a bottom electrode layer, a free layer, an intermediate layer, a reference layer, and a top electrode layer; or the magnetic resistance sensor sequentially comprises the following components from bottom to top: a bottom electrode layer, a reference layer, an intermediate layer, a free layer and a top electrode layer;
wherein the electrode is used for detecting nerve electric signals; the electrode is made of biocompatible metal or metal oxide, and comprises platinum, gold, platinum alloy and gold alloy;
wherein the reference layer has a fixed magnetization direction, the reference layer material is one or more of IrMn, ptMn, feMn;
wherein the free layer material is one or more of CoFe and CoFe/Ru/CoFe, niFe, coFeB, feGaB, co, fe, niFeCo, coNbZr;
wherein the material of the intermediate layer is one or more of aluminum oxide, magnesium aluminum oxide, magnesium gallium oxide and magnesium zinc oxide;
wherein the materials of the bottom electrode layer and the top electrode layer are one or more of Ta, au, ag, al, cu, pt, W, ti, mo, taN and TiN;
wherein, the shape of the magnetic resistance sensor is 5 sections of folded shapes with the length of 40-50 mu m and the width of 3-6 mu m, or yokes with the width of 1-6 mu m and the length of 40-120 mu m;
wherein the shape of the electrode is square with the side length of 10-50 mu m.
2. A method of preparing a neural pole, comprising:
depositing a magnetoresistive sensor component on a substrate by magnetron sputtering; the magnetoresistive sensor component comprises at least one magnetoresistive sensor which are mutually connected in series, and the at least one magnetoresistive sensor is vertically stacked;
photoetching and etching to a bottom electrode layer at the bottommost part in the magnetoresistive sensor component, defining the shape of the magnetoresistive sensor and exposing the bottom electrode layer;
sputtering and etching the passivation layer to expose the top electrode layer and the bottom electrode layer of the magnetoresistive sensor;
defining a sensitive direction by annealing;
defining the shape of the electrodes and leads;
deep reactive ion etching the shape of the neural pole;
the annealing is performed under the preset external magnetic field intensity and the preset temperature, and the annealing is performed locally through laser pulse;
wherein, the magneto-resistance sensor includes from bottom to top in order: a bottom electrode layer, a free layer, an intermediate layer, a reference layer, and a top electrode layer; or the magnetic resistance sensor sequentially comprises the following components from bottom to top: a bottom electrode layer, a reference layer, an intermediate layer, a free layer and a top electrode layer;
wherein the electrode is used for detecting nerve electric signals; the electrode is made of biocompatible metal or metal oxide, and comprises platinum, gold, platinum alloy and gold alloy;
wherein the reference layer has a fixed magnetization direction, the reference layer material is one or more of IrMn, ptMn, feMn;
wherein the free layer material is one or more of CoFe and CoFe/Ru/CoFe, niFe, coFeB, feGaB, co, fe, niFeCo, coNbZr;
wherein the material of the intermediate layer is one or more of aluminum oxide, magnesium aluminum oxide, magnesium gallium oxide and magnesium zinc oxide;
wherein the materials of the bottom electrode layer and the top electrode layer are one or more of Ta, au, ag, al, cu, pt, W, ti, mo, taN and TiN;
wherein, the shape of the magnetic resistance sensor is 5 sections of folded shapes with the length of 40-50 mu m and the width of 3-6 mu m, or yokes with the width of 1-6 mu m and the length of 40-120 mu m;
wherein the shape of the electrode is square with the side length of 10-50 mu m.
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