KR100520663B1 - A semiconductor device - Google Patents
A semiconductor device Download PDFInfo
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- KR100520663B1 KR100520663B1 KR10-2000-0083829A KR20000083829A KR100520663B1 KR 100520663 B1 KR100520663 B1 KR 100520663B1 KR 20000083829 A KR20000083829 A KR 20000083829A KR 100520663 B1 KR100520663 B1 KR 100520663B1
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- magnetic field
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000005291 magnetic effect Effects 0.000 claims abstract description 62
- 239000010410 layer Substances 0.000 claims abstract description 18
- 239000000696 magnetic material Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000011229 interlayer Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 230000005415 magnetization Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910003266 NiCo Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910017052 cobalt Inorganic materials 0.000 description 14
- 239000010941 cobalt Substances 0.000 description 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
본 발명은 반도체소자에 관한 것으로, RF 반도체소자의 인덕터에서 발생하는 자기장을 감지하고 자기장의 세기를 측정하여 인덕터에 피드백해 자기장의 세기를 제어하는 반도체기판의 제1층간절연막에 구비되는 비자성물질/자성물질의 다층구조로 구비되는 자기장 센서와, 상기 자기장 센서와 접속되는 금속층과, 상기 금속층 상측에 절연되어 구비되는 인덕터로 구성되는 반도체소자를 제공하여 GMR 현상으로 반도체 소자 내에 존재하는 자기장을 감지할 수 있으며, 자기장의 세기에 따른 전기적 저항의 변화 폭이 다르므로 저항 측정을 통하여 자기장의 세기를 측정할 수 있고 자기장이 트랜지스터에 미치는 영향을 파악할 수 있으며 인더턱에서 발생하는 자기장을 감지하여 자기장의 세기를 측정하고 인덕터에 피드백함으로써 자기장의 세기를 제어할 수 있는 기술이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, wherein a nonmagnetic material is provided in a first interlayer insulating film of a semiconductor substrate that senses a magnetic field generated by an inductor of an RF semiconductor device, measures the strength of the magnetic field, and feeds back to the inductor to control the strength of the magnetic field. A semiconductor device comprising a magnetic field sensor having a multilayer structure of a magnetic material, a metal layer connected to the magnetic field sensor, and an inductor insulated from the upper side of the metal layer to detect a magnetic field existing in the semiconductor device by a GMR phenomenon. Since the change in the electrical resistance varies depending on the strength of the magnetic field, the strength of the magnetic field can be measured by measuring the resistance, and the influence of the magnetic field on the transistor can be measured. Control the strength of the magnetic field by measuring its strength and feeding it back to the inductor In a number of technologies.
Description
본 발명은 반도체소자에 관한 것으로, 특히 구리와 코발트의 적층구조를 다층으로 형성하여 자기장 센서를 제작하는 방법에 관한 것이다. The present invention relates to a semiconductor device, and more particularly, to a method of manufacturing a magnetic field sensor by forming a multilayer structure of copper and cobalt in a multilayer.
현재 RF 반도체소자의 작동을 위하여 인덕터 ( inductor ) 가 필수적이다. 그러나, 인덕터에서 발생하는 자기장은 주위 도체에 유도기전력에 의한 외전류 ( eddy current )를 유발하게 된다. 발생된 외전류는 원하지 않는 신호를 발생시키거나 노이즈로 작용하여 반도체소자의 동작시 오동작을 유발할 수 있다. Inductors are essential to the operation of RF semiconductor devices. However, the magnetic field generated by the inductor causes an eddy current caused by induced electromotive force in the surrounding conductor. The generated external current may generate an unwanted signal or act as a noise, which may cause a malfunction in the operation of the semiconductor device.
따라서, 인접하는 트랜지스터의 경우, 외전류에 의한 신호 왜곡으로 반도체 소자의 오동작을 유발시킬 수 있는 문제점이 있다. Therefore, in the case of adjacent transistors, there is a problem that may cause malfunction of the semiconductor device due to signal distortion caused by external current.
그러므로 자기장을 감지하고 자기장의 세기를 측정함으로써 자기장을 제어할 수 있는 센서를 필요로 한다. Therefore, there is a need for a sensor that can control the magnetic field by sensing the magnetic field and measuring the strength of the magnetic field.
본 발명의 상기한 종래기술의 문제점을 해결하기위하여, GMR 현상을 이용하여 전기적 저항을 급격히 감소시키는 자기장 센서가 구비되는 반도체소자를 제공하는데 그 목적이 있다.In order to solve the above problems of the prior art of the present invention, an object of the present invention is to provide a semiconductor device having a magnetic field sensor that rapidly reduces the electrical resistance by using the GMR phenomenon.
이상의 목적을 달성하기 위해 본 발명에 따른 반도체소자는, In order to achieve the above object, a semiconductor device according to the present invention,
반도체기판의 제1층간절연막에 구비되는 비자성물질/자성물질의 다층구조로 구비되는 자기장 센서와,A magnetic field sensor having a multilayer structure of a nonmagnetic material / magnetic material provided in a first interlayer insulating film of a semiconductor substrate;
상기 자기장 센서와 접속되는 금속층과,A metal layer connected to the magnetic field sensor,
상기 금속층 상측에 절연되어 구비되는 인덕터를 포함하는 것과,Including an inductor is insulated on the upper metal layer,
상기 비자성물질/자성물질의 다층구조는, Cu/Co, Cu/Ni, Cu/NiCo, Cr/Fe, Ag/Co 또는 Ag/Fe 의 다층 구조인 것과,The multilayer structure of the nonmagnetic material / magnetic material is a multilayer structure of Cu / Co, Cu / Ni, Cu / NiCo, Cr / Fe, Ag / Co or Ag / Fe,
상기 비자성물질/자성물질 다층구조의 최하측 비자성물질을 10∼100 Å 두께로 형성하여 자화방향을 결정하는 것과,Determining the magnetization direction by forming a lowermost nonmagnetic material of the nonmagnetic material / magnetic material multilayer structure to a thickness of 10 to 100 mm 3;
상기 자성물질은 10∼100 Å 두께로 형성하는 것을 특징으로 한다.The magnetic material is characterized in that it is formed to a thickness of 10 ~ 100Å.
한편, 본 발명의 원리는 다음과 같다. On the other hand, the principle of the present invention is as follows.
비자성 물질인 구리와 자성 물질인 코발트로 이루어진 (Cu/Co)×N ( N≥2 ) 층의 다층 구조에서 관찰되는 GMR 현상을 이용하여 반도체소자 내에 존재할 수 dT는 자기장을 감지하고, 자기장의 세기를 측정하는 것이다. DT, which can be present in a semiconductor device by using a GMR phenomenon observed in a multilayer structure of (Cu / Co) × N (N≥2) layer consisting of a nonmagnetic material copper and a magnetic material cobalt, dT senses a magnetic field and It is to measure the intensity.
상기 GMR 이란 자기장에 따라 전기적 저항이 급격히 감소하는 현상으로서, 자기장을 가할 때의 저항이 자기장을 가하지 않을 때에 비하여 50 퍼센트 이상 감소할 수 있다. (M.N. Baibich er al., Phys. Rev. Lett. 61, 2472(1988))The GMR is a phenomenon in which the electrical resistance decreases rapidly according to the magnetic field, and the resistance when applying the magnetic field may be reduced by 50 percent or more compared with when the magnetic field is not applied. (M.N. Baibich er al., Phys. Rev. Lett. 61, 2472 (1988))
상기 GMR 현상을 관찰 할 수 있는 구조 중의 하나가 비자성 물질로 이루어진 층과 자성 물질로 이루어진 층이 반복되는 다층 구조 ((비자성/자성)×N, N≥2)이다. (S.S.P.Parkin et al.,Appl.Phys.Lett.58,2710(1991)).One of the structures in which the GMR phenomenon can be observed is a multilayered structure ((nonmagnetic / magnetic) × N, N ≧ 2) in which a layer made of a nonmagnetic material and a layer made of a magnetic material are repeated. (S.S. P. Parkin et al., Appl. Phys. Lett. 58,2710 (1991)).
현재 반도체 공정에 사용되는 비자성 물질인 구리와 자성물질인 코발트를 다층구조로 형성할 수 있다. Currently, non-magnetic copper and magnetic material cobalt, which are used in semiconductor processes, may be formed in a multilayer structure.
도 1 은 본 발명에 따른 반도체소자를 도시한 단면도로서, Cu/Co 의 다층구조를 갖는 자기장 센서를 도시한 것이다. 1 is a cross-sectional view showing a semiconductor device according to the present invention, which shows a magnetic field sensor having a multilayer structure of Cu / Co.
도 1 를 참조하면, 장벽층(11)을 형성하고 그 상부에 제1구리막(13), 제1코발트막(15), 제2구리막(17), 제2코발트막(19), 제3구리막(21) 및 제3코발트막(23)을 적층하여 형성한다. 이때, 상기 장벽층(11)은 구리, Ta, TaN, TiN 또는 WN 으로 100∼1000 Å 두께 형성한 것이다. Referring to FIG. 1, a barrier layer 11 is formed and a first copper film 13, a first cobalt film 15, a second copper film 17, a second cobalt film 19, and a first layer are formed thereon. The three copper films 21 and the third cobalt film 23 are laminated and formed. At this time, the barrier layer 11 is 100 to 1000 mm thick formed of copper, Ta, TaN, TiN or WN.
상기 자기장 센서는 Cu/Co 다층구조 외에 Cu/Ni, Cu/NiCo, Cr/Fe, Ag/Co 또는 Ag/Fe 의 다층 구조로 형성하여 자기장 감지 효과를 얻을 수도 있다. The magnetic field sensor may be formed in a multilayer structure of Cu / Ni, Cu / NiCo, Cr / Fe, Ag / Co, or Ag / Fe in addition to the Cu / Co multilayer structure to obtain a magnetic field sensing effect.
도 2 는 본 발명에 따른 자기장 센서로서, 자기장에 따른 자화 방향을 도시한 단면도이다. 2 is a cross-sectional view showing a magnetization direction according to a magnetic field as a magnetic field sensor according to the present invention.
먼저, 제1구리막(31)을 스퍼터링 방법으로 10∼100 Å 두께 형성하되, 상기 제1구리막(31) 양 옆의 코발트 막의 자화 ( magnetization ) 의 방향이 같지 않도록 설정한다. ( antiferromagnetic coupling ) First, the first copper film 31 is formed to have a thickness of 10 to 100 mm by sputtering, but the magnetization direction of the cobalt film on both sides of the first copper film 31 is not set to be the same. antiferromagnetic coupling
이때, 상기 제1구리막(31)은, 자기장이 가하지 않았을 때 두 개의 근접한 자성 막의 자화가 서로 다른 방향에 있다가, 자기장이 가해지면서 방향이 같아지는 효과에 의한 것이므로, 자화간의 방향이 같지 않도록 구리 막의 두께를 다르게 설정하여 GMR 현상을 유발할 수 있도록 형성한 것이다. In this case, when the magnetic field is not applied to the first copper film 31, the magnetizations of two adjacent magnetic films are in different directions, and thus the directions of the magnetization are not the same. The thickness of the copper film is set differently to induce the GMR phenomenon.
그 다음, 상기 제1구리막(31) 상부에 제1코발트막(33)을 10∼100 Å 두께로 형성한다. Next, a first cobalt film 33 is formed on the first copper film 31 to a thickness of 10 to 100 Å.
그리고, 상기 제1구리막(31)/제1코발트막(33)과 같이 그 상부에 제2구리막(35)/제2코발트막(37)/제3구리막(39)/제3코발트막(41)의 적층구조를 형성한다. The second copper film 35, the second cobalt film 37, the third copper film 39, and the third cobalt film are formed on top of the first copper film 31 and the first cobalt film 33. The laminated structure of the film 41 is formed.
한편, 각각의 자기장 센서는 좌측으로부터 각각 자기장이 걸리지 않은 경우, 자기장이 우측으로 걸린 경우 그리고 자기장이 좌측으로 걸린 경우를 도시한다. On the other hand, each magnetic field sensor shows the case where the magnetic field is not caught from the left, the case when the magnetic field is caught to the right, and the case where the magnetic field is caught to the left.
도 3 은 본 발명에 따른 자기장 센서가 적용되는 반도체소자를 도시한 단면도이다. 3 is a cross-sectional view illustrating a semiconductor device to which a magnetic field sensor according to the present invention is applied.
도 3 을 참조하면, 자기장 센서(53)가 구비되는 제1층간절연막(51) 상부에 상기 자기장 센서(53)와 접속되는 금속층(55)이 형성된다. Referring to FIG. 3, a metal layer 55 connected to the magnetic field sensor 53 is formed on the first interlayer insulating layer 51 having the magnetic field sensor 53.
그리고, 상기 금속층(55) 상부를 평탄화시키는 제2층간절연막(57) 상부에 인덕터(59)가 구비된다.An inductor 59 is disposed on the second interlayer insulating layer 57 to planarize the upper portion of the metal layer 55.
이때, 상기 인덕터(59)는 자기장 센서(53) 상측에는 형성되지 않아 상기 자기장 센서(53) 상측으로부터 상기 자기장 센서(53)로 자기장(61)이 인가된다. In this case, the inductor 59 is not formed above the magnetic field sensor 53, so that the magnetic field 61 is applied from the upper side of the magnetic field sensor 53 to the magnetic field sensor 53.
여기서, 상기 자기장 센서(53)는 반도체소자 내에 존재하는 자기장을 감지하고 자기장의 세기를 측정함으로써 자기장의 세기에 따른 트랜지스터의 특성을 관찰할 수 있다. 또한 RF 반도체 소자에 사용되는 인덕터에서 발생하는 자기장의 세기를 측정하여 다시 인덕터에 피드백함으로써 자기장의 세기를 제어할 수 있다. Here, the magnetic field sensor 53 may observe the characteristics of the transistor according to the strength of the magnetic field by detecting the magnetic field present in the semiconductor device and measuring the strength of the magnetic field. In addition, the strength of the magnetic field may be controlled by measuring the strength of the magnetic field generated in the inductor used in the RF semiconductor device and feeding it back to the inductor.
이상에서 설명한 바와같이 본 발명에 따른 반도체소자는, GMR 현상을 이용하여 반도체 소자 내에 존재하는 자기장을 감지할 수 있으며, 자기장의 세기에 따른 전기적 저항의 변화 폭이 다르므로 저항의 측정을 통하여 자기장의 세기를 측정할 수 있고 자기장이 트랜지스터에 미치는 영향을 파악할 수 있으며 인더턱에서 발생하는 자기장을 감지하여 자기장의 세기를 측정하고 인덕터에 피드백함으로써 자기장의 세기를 제어할 수 있는 효과를 제공한다. As described above, the semiconductor device according to the present invention can detect a magnetic field existing in the semiconductor device by using a GMR phenomenon, and since the change in the electrical resistance varies according to the strength of the magnetic field, Intensity can be measured, the effect of the magnetic field on the transistor can be measured, and the magnetic field generated from the inductor can be measured to measure the strength of the magnetic field and fed back to the inductor, thereby controlling the strength of the magnetic field.
도 1 은 본 발명에 따른 반도체소자의 자기장 센서를 도시한 단면도. 1 is a cross-sectional view showing a magnetic field sensor of a semiconductor device according to the present invention.
도 2 는 자기장에 따른 자화방향을 도시한 자기장 센서의 단면도.2 is a cross-sectional view of the magnetic field sensor showing the magnetization direction according to the magnetic field.
도 3 은 본 발명에 따른 자기장 센서가 구비되는 반도체소자의 단면도.3 is a cross-sectional view of a semiconductor device provided with a magnetic field sensor according to the present invention.
< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>
11 : 장벽층 13,31 : 제1구리막11: barrier layer 13, 31: first copper film
15,33 : 제1코발트막 17,35 : 제2구리막15,33: first cobalt film 17,35: second copper film
19,37 : 제2코발트막 21,39 : 제3구리막19,37: second cobalt film 21,39: third copper film
23,41 : 제3코발트막 51 : 제1층간절연막23,41: third cobalt film 51: first interlayer insulating film
53 : 자기장 센서 55 : 금속층53 magnetic field sensor 55 metal layer
57 : 제2층간절연막 59 : 인덕터57 second interlayer insulating film 59 inductor
61 : 자기장61: magnetic field
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786663A (en) * | 1993-09-09 | 1995-03-31 | Fujitsu Ltd | Production of magnetoresistance effect element |
| JPH09307156A (en) * | 1996-05-15 | 1997-11-28 | Sanyo Electric Co Ltd | Magnetroresistance device |
| JPH10198927A (en) * | 1997-01-08 | 1998-07-31 | Nec Corp | Magnetoresistance effect film and its production |
| JPH11109006A (en) * | 1997-10-01 | 1999-04-23 | Minebea Co Ltd | Magnetic impedance sensor |
-
2000
- 2000-12-28 KR KR10-2000-0083829A patent/KR100520663B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786663A (en) * | 1993-09-09 | 1995-03-31 | Fujitsu Ltd | Production of magnetoresistance effect element |
| JPH09307156A (en) * | 1996-05-15 | 1997-11-28 | Sanyo Electric Co Ltd | Magnetroresistance device |
| JPH10198927A (en) * | 1997-01-08 | 1998-07-31 | Nec Corp | Magnetoresistance effect film and its production |
| JPH11109006A (en) * | 1997-10-01 | 1999-04-23 | Minebea Co Ltd | Magnetic impedance sensor |
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| KR20020054665A (en) | 2002-07-08 |
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