CN101692480B - Method for improving stability of bias field in multi-layer membrane structure in Co/Cu/NiFe/FeMn spin valve structure - Google Patents
Method for improving stability of bias field in multi-layer membrane structure in Co/Cu/NiFe/FeMn spin valve structure Download PDFInfo
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- CN101692480B CN101692480B CN2009101648701A CN200910164870A CN101692480B CN 101692480 B CN101692480 B CN 101692480B CN 2009101648701 A CN2009101648701 A CN 2009101648701A CN 200910164870 A CN200910164870 A CN 200910164870A CN 101692480 B CN101692480 B CN 101692480B
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Abstract
The invention discloses a method for improving the stability of a bias field in a multi-layer membrane structure in a Co/Cu/NiFe/FeMn spin valve structure, which belongs to the technical field of magnetoelectronics and magnetic recording technology. The method comprises the following steps: (1) manufacturing a multi-layer membrane of the Co/Cu/NiFe/FeMn spin valve structure; and (2) using a focused gallium ion working station serving as ion radiation equipment for ion radiation modification, wherein the dosage of ion radiation is 5*1,011 ions/cm2, the energy of an ion beam is 30keV, and the current of the ion beam is 1nA. The method can be applied to magnetosensitive units in magnetosensitive elements formed by a magnetic multi-layer membrane, such as a giant magnetoresistive sensor, a magnetic random access memory, a magnetic recording element and the like, and has the advantages of simplicity, good effect and the like.
Description
Affiliated technical field
The present invention relates to a kind of method that improves bias field stability in the magnetic multilayer film structure, belong to magneto-electronics and Magnetographic Technology field.
Background technology
Since 1988, these new ideas of magnetic electron device have appearred in the appearance of the giant magnetic resistor material that the giant magnetic impedance material that changes with external magnetic field along with AC impedance, resistivity change with external magnetic field and the giant magnetostriction material of physical dimension telescopic variation with external magnetic field.Have bigger magneto-resistance effect than present extensive use based on the anisotropic magnetoresistance material sensors based on the magnetoresistive transducer of multilayer film giant magnetic resistor material and spin tunneling junction magnetic resistance material, sensitivity and signal to noise ratio are higher, range of application is wider, can be widely used in information technology, automotive industry, biomedicine, instrument and meter and space technology.At present, in the world will be based on the sub-sensor application of magnetoelectricity of multilayer film giant magnetic resistor material and spin tunneling junction magnetic resistance material in fields such as magnetic-field measurement, current measurement, position measurement, displacement and tachometric survey, strain measurement, DNA detection.
For the magnetoresistance effect that uses in the magnetic electron device, the long-time bias-field that stops can reduce gradually under reverse saturation field, and this point shows particularly evidently when serviceability temperature is higher than room temperature.The pyromagnetic stability problem of this of magnetoresistance effect seriously affects magnetic electron device reliability and useful life.In actual applications, people passed through to select suitable resilient coating, ferromagnetic layer and anti-ferromagnetic layer material and thickness mostly before the preparation film, and the microstructure and the tissue of control multi-layer film material obtain pyromagnetic relatively-better stability magnetoresistance effect.But up to the present the pyromagnetic stability problem of magnetoresistance effect all is not well solved.Current, domestic and international many scholars have carried out the performance impact research of ion irradiation to magnetic thin film/multilayer film, and find that ion irradiation generally can destroy the magnetic of ferromagnetic layer or changes magnetocrystalline anisotropy, strengthens domain wall motion, reduces magnetic couplings intensity and magneto-resistor, as described in the non mask preparation method (200710133293.0) of patent of invention based thin film/multilayer film nano magnetic electron device.
Summary of the invention
The object of the present invention is to provide the method for bias field stability in a kind of Co/Cu/NiFe/FeMn of raising spin valve structure multi-layer film structure, reliability and the useful life that can improve magnetic electron device effectively.
The variation of the material microstructure that the present invention causes by ion irradiation and the interface coupled characteristic that ferromagnetic layer and inverse ferric magnetosphere were adjusted or changed in the diffusion of chemical element between the interface, thus the stability of bias-field in the magnetic multilayer film structure improved.
A kind of method that improves bias field stability in the magnetic multilayer film structure may further comprise the steps:
(1), the sequential aggradation of pressing substrate, resilient coating, magnetosphere, protective layer makes magnetoresistance effect, when the deposition magnetosphere, apply as required and carry out necessary magnetic-field heat treatment after the plane induced magnetic field of 50～500Oe or deposition are finished;
(2), utilize focusing gallium ion work station as ion irradiation equipment, to carrying out the ion irradiation modification by the position of the magnetoresistance effect of above-mentioned (1) one step process preparation or the required modification of magnetic sensing unit of magnetoresistance effect formation thus; Wherein the ion irradiation parameter is: ion beam energy is 10～30keV, and ion beam current is 100pA～5nA;
It is characterized in that: (1) step, described magnetoresistance effect was the structure with the exchange biased magnetic couplings of overhead type, and (2) the step dosage of described ion irradiation is 5 * 10
11～5 * 10
14Ions/cm
2
A kind of method that improves bias field stability in the Co/Cu/NiFe/FeMn spin valve structure multi-layer film structure may further comprise the steps:
(1), utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 5nm; thickness is the Co ferromagnetic layer of 4nm; thickness is the Cu layer of 2nm; thickness is 10nm NiFe layer, and thickness is the FeMn of 13nm and the protective layer Ta that thickness is 3nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa, sputter high purity argon air pressure: 7 * 10
-2Pa, sputtering power: 120W, the specimen holder speed of rotation: 20rpm, growth temperature: room temperature, growth rate: 0.03～0.12nm/s when deposition, applies 100Oe plane induced magnetic field, and direction is parallel to the face direction;
(2), magnetoresistance effect that deposition is good adopts the focused ion beam work station to carry out radiation modification, the dosage of ion irradiation is 5 * 10
11Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.
The present invention adopts focused ion beam technology, and the ion irradiation modification by low dosage makes the microstructure of magnetoresistance effect change and chemical element is optimized interface coupling performance between ferromagnetic layer and inverse ferric magnetosphere in that diffusion takes place between the interface.Compare with the non mask preparation method (200710133293.0) of patent based thin film/multilayer film nano magnetic electron device, difference is that the ion irradiation modification of this patent by low dosage makes the microstructure of magnetoresistance effect change and chemical element is optimized interface coupling performance between ferromagnetic layer and inverse ferric magnetosphere in that diffusion takes place between the interface, and the former removes magnetospheric magnetic to reach the purpose of no mask manufacturing magnetic electron device by heavy dose of ion irradiation.
A kind of method that improves bias field stability in the magnetic multilayer film structure provided by the invention, magnetosensitive sense unit in the giant magnetoresistance electric resistance sensor that also can be applicable to be made of magnetoresistance effect, magnetic RAM, the magnetic recording device equimagnetic Sensitive Apparatus has advantages such as method is simple, effective.
Description of drawings
Fig. 1 is that CoFe/Cu/CoFe/IrMn spin valve structure magnetoresistance effect is through 1 * 10
13Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Fig. 2 is that Co/Cu/NiFe/FeMn spin valve structure magnetoresistance effect is through 5 * 10
11Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Fig. 3 is CoFe/AlO
x/ CoFe/IrMn spin tunneling junction multilayer film structure is through 1 * 10
14Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Fig. 4 is FeNi/AlO
x/ NiFe/FeMn spin tunneling junction multilayer film structure is through 5 * 10
14Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Embodiment
Further describe the present invention below by example.
Embodiment 1, based on CoFe/Cu/CoFe/IrMn spin valve structure multilayer film
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 5nm; thickness is the CoFe ferromagnetic layer of 5nm; thickness is the Cu layer of 2.5nm; thickness is 5nm CoFe layer, and thickness is the IrMn of 12nm and the protective layer Ta that thickness is 8nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 100Oe plane induced magnetic field, direction is parallel to the face direction.The magnetoresistance effect that deposition is good adopts the focused ion beam work station to carry out the ion irradiation modification, and the dosage of ion irradiation is 1 * 10
13Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, the thermal stability of the sample behind irradiation can be significantly improved, as shown in Figure 1, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 5nm; thickness is the Co ferromagnetic layer of 4nm; thickness is the Cu layer of 2nm; thickness is 10nm NiFe layer, and thickness is the FeMn of 13nm and the protective layer Ta that thickness is 3nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 100Oe plane induced magnetic field, direction is parallel to the face direction.The magnetoresistance effect that deposition is good adopts the focused ion beam work station to carry out radiation modification, and the dosage of ion irradiation is 5 * 10
11Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, the thermal stability of the sample behind irradiation can be significantly improved, as shown in Figure 2, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Embodiment 3, based on CoFe/AlO
x/ CoFe/IrMn spin tunneling junction multilayer film structure
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 4nm, thickness is the CoFe ferromagnetic layer of 3nm, thickness is the AlO of 1nm
xLayer, thickness is the CoFe layer of 3nm, thickness is the IrMn of 12nm and the protective layer Ta that thickness is 12nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 200Oe plane induced magnetic field, direction is parallel to the face direction.The magnetic thin film that deposition is good adopts the focused ion beam work station to carry out radiation modification, and the dosage of ion irradiation is 1 * 10
14Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, the thermal stability of the sample behind irradiation can be significantly improved, as shown in Figure 3, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 3nm, thickness is the FeNi ferromagnetic layer of 10nm, thickness is the AlO of 1nm
xLayer, thickness is the NiFe layer of 10nm, thickness is the FeMn of 10nm and the protective layer Ta that thickness is 13nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 200Oe plane induced magnetic field, direction is parallel to the face direction.The magnetic thin film that deposition is good adopts the focused ion beam work station to carry out radiation modification, and the dosage of ion irradiation is 5 * 10
14Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, its thermal stability of sample behind irradiation can be significantly improved, as shown in Figure 4, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Claims (1)
1. method that improves bias field stability in the Co/Cu/NiFe/FeMn spin valve structure multi-layer film structure may further comprise the steps:
(1), utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 5nm; thickness is the Co ferromagnetic layer of 4nm; thickness is the Cu layer of 2nm; thickness is the 10nmNiFe layer, and thickness is the FeMn of 13nm and the protective layer Ta that thickness is 3nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa, sputter high purity argon air pressure: 7 * 10
-2Pa, sputtering power: 120W, the specimen holder speed of rotation: 20rpm, growth temperature: room temperature, growth rate: 0.03～0.12nm/s when deposition, applies 100Oe plane induced magnetic field, and direction is parallel to the face direction;
(2), magnetoresistance effect that deposition is good adopts the focused ion beam work station to carry out radiation modification, the dosage of ion irradiation is 5 * 10
11Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.
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| CN106784299B (en) * | 2017-02-10 | 2020-04-24 | 中国科学院物理研究所 | Multilayer film heterostructure, preparation method and application thereof |
| CN111009365B (en) * | 2019-12-13 | 2020-09-04 | 北京科技大学 | Method for regulating and controlling magnetic moment arrangement of antiferromagnetic thin film material |
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