CN113866691A - Tunneling magnetoresistance sensor and preparation method and use method thereof - Google Patents
Tunneling magnetoresistance sensor and preparation method and use method thereof Download PDFInfo
- Publication number
- CN113866691A CN113866691A CN202111460490.XA CN202111460490A CN113866691A CN 113866691 A CN113866691 A CN 113866691A CN 202111460490 A CN202111460490 A CN 202111460490A CN 113866691 A CN113866691 A CN 113866691A
- Authority
- CN
- China
- Prior art keywords
- layer
- tunneling
- oxide
- ferromagnetic free
- free layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
Abstract
The invention relates to the field of magnetic sensors, and provides a tunneling magneto-resistance sensor and a preparation method and a use method thereof. The tunneling magneto-resistance sensor sequentially comprises a lower electrode, an anti-ferromagnetic pinning layer, a ferromagnetic pinned layer, a tunneling insulation layer, a ferromagnetic free layer and an upper electrode from bottom to top, and further comprises an oxidation layer arranged between the upper electrode and the ferromagnetic free layer; under the condition that the voltage with controllable strength is applied to the oxide layer, oxygen ions in the oxide layer migrate to the interface between the oxide layer and the ferromagnetic free layer under the action of an electric field, and the magnetic anisotropy of the ferromagnetic free layer is changed, so that the dynamic range of a tunnel junction of the tunneling magneto-resistance sensor is changed. The invention utilizes the adjustable electric field to drive the oxygen ions in the oxide layer to move, thereby changing the magnetic anisotropy of the ferromagnetic free layer, realizing the adjustment and control of the dynamic range of the tunneling magneto-resistance sensor and meeting the requirements under different application environments.
Description
Technical Field
The invention relates to the field of magnetic sensors, in particular to a tunneling magneto-resistance sensor, a preparation method of the tunneling magneto-resistance sensor and a use method of the tunneling magneto-resistance sensor.
Background
The magnetic sensor can sense the change of physical quantity related to magnetic phenomenon, and convert the change into an electric signal for detection, thereby directly or indirectly detecting physical information such as magnetic field size, direction, displacement, angle, current and the like. The magneto-resistance (MR) sensor has the advantages of low offset, high sensitivity and good temperature performance, and can be widely applied to the fields of information, motors, power electronics, energy management, automobiles, magnetic information reading and writing, industrial automatic control, biomedicine and the like. The magnetoresistive sensor includes AMR (anisotropic magnetoresistive) sensors, GMR (Giant magnetoresistive) sensors, TMR (tunneling magnetoresistive) sensors, and the like. The TMR (tunneling magneto-resistance) sensor has the advantages of wide magnetic field detection range, high detection sensitivity, high response speed and the like, and is applied to important scenes.
Because the magnetoresistance effect of the tunneling magnetoresistance sensor is related to the magnetization direction and the magnetic anisotropy field of the magnetic material, the sensitivity and the linear measurement range of the tunneling magnetoresistance sensor are limited by the magnitude of the magnetic anisotropy field of the free layer, the existing tunneling magnetoresistance sensor can only provide the linear response range of about 100 oersted (Oe), and the actual requirement is difficult to meet. At present, a tunneling magnetoresistance sensor with high sensitivity and capable of realizing measurement range regulation is needed to meet the requirements under different environments.
Disclosure of Invention
The invention aims to provide a tunneling magneto-resistance sensor with high sensitivity and adjustable measurement range and a preparation method thereof.
In order to achieve the above object, an aspect of the present invention provides a tunneling magnetoresistive sensor, which includes, from bottom to top, a lower electrode, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a tunneling insulating layer, a ferromagnetic free layer, an upper electrode, and an oxide layer disposed between the upper electrode and the ferromagnetic free layer; under the condition that the voltage with controllable strength is applied to the oxide layer, oxygen ions in the oxide layer migrate to the interface between the oxide layer and the ferromagnetic free layer under the action of an electric field, and the magnetic anisotropy of the ferromagnetic free layer is changed, so that the dynamic range of a tunnel junction of the tunneling magneto-resistance sensor is changed.
Further, the material of the oxide layer includes a metal and an oxide of the metal.
Further, the material of the oxide layer is tantalum and tantalum oxide; or zinc and zinc oxide; or silver and silver oxide; or aluminum and aluminum oxide; or copper and copper oxide; or titanium and titanium oxide.
Further, the antiferromagnetic pinning layer, the ferromagnetic pinned layer, the tunneling insulating layer, and the ferromagnetic free layer are all cylindrical in shape.
Further, the strength of the voltage applied to the oxide layer is determined according to at least one of the following conditions: the materials and lattice structures of the oxide layer and the ferromagnetic free layer; the quality of the interface between the oxide layer and the ferromagnetic free layer; shape and size of the tunneling magnetoresistive sensor.
The invention also provides a preparation method of the tunneling magneto-resistance sensor, which comprises the following steps:
growing a conductive layer serving as a lower electrode on a substrate;
manufacturing a vertical magnetic anisotropic tunnel junction on the conductive layer as the lower electrode;
growing an oxide layer on the perpendicular magnetic anisotropy tunnel junction;
and growing a conductive layer serving as an upper electrode on the oxide layer to form a magnetoresistive film stack structure.
Further, the manufacturing of the perpendicular magnetic anisotropic tunnel junction on the conductive layer as the lower electrode includes: and sequentially growing an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a tunneling insulating layer and a ferromagnetic free layer on the conductive layer as the lower electrode to form a perpendicular magnetic anisotropic tunnel junction.
Further, the growing an oxide layer on the perpendicular magnetic anisotropic tunnel junction includes:
and growing an oxide layer containing the oxide of the metal material on the ferromagnetic free layer by adopting the oxygen-doped metal material.
Further, the metal material is any one of Ta, Zn, Ag, Al, Cu, Pt, W and Ti.
Further, the ferromagnetic free layer is made of any one of CoFeB, CoFe, NiFe, FeGaB, Co, Fe, NiFeCo and CoNbZr, or the ferromagnetic free layer is of a multilayer composite structure; the ferromagnetic pinned layer is made of any one of CoFeB, CoFe, NiFe, FeGaB, Co, Fe, NiFeCo and CoNbZr.
Further, the method further comprises:
and carrying out micro-nano processing on the magnetoresistive film stack structure, and preparing a required circuit diagram on the magnetoresistive film stack structure by adopting photoetching, evaporation and stripping processes.
The invention also provides a using method of the tunneling magneto-resistance sensor, wherein the tunneling magneto-resistance sensor is the tunneling magneto-resistance sensor, and the method comprises the following steps: applying voltage to an upper electrode and a lower electrode of the tunneling magneto-resistance sensor; and adjusting the strength of the voltage applied to the upper electrode and the lower electrode so as to regulate and control the magnetic anisotropy change degree of the ferromagnetic free layer of the tunneling magneto-resistance sensor.
Further, the adjusting the voltage intensity applied to the upper electrode and the lower electrode includes:
determining the voltage intensity applied to the upper electrode and the lower electrode based on at least one of the following conditions: the materials and lattice structures of the oxide layer and the ferromagnetic free layer of the tunneling magneto-resistance sensor; the interface quality between the oxide layer and the ferromagnetic free layer of the tunneling magneto-resistance sensor; the tunneling magneto-resistance sensor is in shape and size.
According to the tunneling magneto-resistance sensor, the oxide layer is designed between the upper electrode and the ferromagnetic free layer, and the controllable electric field is utilized to drive oxygen ions in the oxide layer to move, so that the magnetic anisotropy of the ferromagnetic free layer is changed, the dynamic range (measuring range) of the tunneling magneto-resistance sensor is regulated, and the requirements under different application environments can be met. In addition, the invention can realize the nonvolatile regulation and control of the dynamic range of the tunneling magneto-resistance sensor only by applying smaller vertical voltage to the film stack structure of the tunneling magneto-resistance sensor, and cannot cause breakdown on the device.
Additional features and advantages of embodiments of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the embodiments of the invention without limiting the embodiments of the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a tunneling magnetoresistive sensor according to an embodiment of the invention;
FIG. 2 is a schematic diagram of magnetic moment variation of a tunneling magnetoresistive sensor under the condition of applying a vertical electric field according to an embodiment of the invention;
FIG. 3 is a schematic diagram of magnetic moment variation of a tunneling magnetoresistive sensor under electric field control according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing a tunneling magnetoresistive sensor according to an embodiment of the invention.
Description of the reference numerals
10-lower electrode, 20-antiferromagnetic pinning layer, 30-ferromagnetic pinned layer, 40-tunneling insulating layer,
50-ferromagnetic free layer, 60-oxide layer, 70-top electrode.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In a Magnetic Tunnel Junction (MTJ) based on tunneling magnetoresistance effect (TMR), the magnetization direction of a ferromagnetic thin layer can be independently switched under the control of an external magnetic field, if the polarization directions are parallel, the probability of electron tunneling through an insulating layer is higher, and macroscopically, the resistance is small; if the polarization directions are antiparallel, the probability of electrons tunneling through the insulating layer is small and the macroscopic behavior is extremely resistive. The magnetic tunnel junction can be rapidly switched between two resistance states (a high resistance state and a low resistance state), so that the magneto-resistance sensor based on the TMR effect has the advantages of higher sensitivity and better linearity compared with a GMR magneto-resistance sensor.
The tunneling magneto-resistance sensor consists of a magneto-resistance unit and a lead connecting circuit, wherein the magneto-resistance unit comprises a plurality of magneto-resistance thin film layers. Fig. 1 is a schematic structural diagram of a tunneling magnetoresistive sensor according to an embodiment of the present invention. As shown in fig. 1, the present embodiment provides a tunneling magnetoresistive sensor, which includes, from bottom to top, a lower electrode 10, an antiferromagnetic pinning layer 20, a ferromagnetic pinned layer 30, a tunneling insulating layer 40, a ferromagnetic free layer 50, an upper electrode 70, and an oxide layer 60 disposed between the upper electrode 70 and the ferromagnetic free layer 50. The antiferromagnetic pinning layer 20, the ferromagnetic pinned layer 30, the tunneling insulating layer 40, the ferromagnetic free layer 50 and the oxide layer 60 are magnetoresistive thin film layers constituting the magnetoresistive unit. Under the condition that the voltage with controllable intensity is applied to the oxide layer 60, oxygen ions in the oxide layer 60 migrate to the interface between the oxide layer 60 and the ferromagnetic free layer 50 under the action of an electric field, so as to change the magnetic anisotropy of the ferromagnetic free layer 50, and thus, the dynamic range of the tunnel junction of the tunneling magnetoresistive sensor changes.
The material of the oxide layer 60 is metal and oxide of the metal, such as tantalum and tantalum oxide; zinc and zinc oxide; silver and silver oxide; aluminum and aluminum oxide; copper and copper oxide; titanium, titanium oxide, and the like. Under the condition of applying voltage, oxygen ions in the metal oxide move under the action of an electric field, and when the oxygen ions move to the interface between the oxide layer 60 and the ferromagnetic free layer 50, the magnetic anisotropy of the ferromagnetic free layer 50 is changed, so that the dynamic range (namely the measurement range) of the tunneling magneto-resistance sensor is changed.
As shown in FIG. 1, the directions indicated by the arrows in ferromagnetic pinned layer 30 and ferromagnetic free layer 50 represent the magnetic moment directions. The tunneling magnetoresistance film stack structure prepared by the vacuum coating equipment has vertical magnetic anisotropy, and the magnetic moment directions of the ferromagnetic pinned layer 30 and the ferromagnetic free layer 50 face out of plane when no voltage is applied. The "out-of-plane" refers to a direction outside the plane of the magnetoresistive thin-film layer and forming a certain angle with the plane of the magnetoresistive thin-film layer, and the direction is the "out-of-plane direction"; the "in-plane" refers to a plane in which the magnetoresistive thin film layer is located, and a direction parallel to the plane in which the magnetoresistive thin film layer is located is an "in-plane direction". The magnetic moment orientations of the ferromagnetic pinned layer 30 and the ferromagnetic free layer 50 in fig. 1 are perpendicular "out-of-plane" when the range of the tunneling magnetoresistive sensor is at a minimum.
FIG. 2 is a schematic diagram of magnetic moment variation of a tunneling magnetoresistive sensor under an applied electric field according to an embodiment of the invention. As shown in fig. 2, under the condition that a voltage in the vertical direction is applied to the tunneling magnetoresistive sensor, oxygen ions in the oxide layer 60 move to the interface between the oxide layer 60 and the ferromagnetic free layer 50 under the action of an electric field, so that the magnetic moment direction of the ferromagnetic free layer 50 is changed, the magnetic moment direction is turned from "out of plane" to "in plane", the minimum range of the magnetic moment facing the out of plane is converted into the maximum range of the magnetic moment facing the in-plane, and at this time, the linearity of the tunneling magnetoresistive sensor is maximum. In this process, a small voltage is applied to the oxide layer 60 to achieve non-volatile control of the magnetic moment of the ferromagnetic free layer 50, and the applied voltage does not affect the magnetic moment of the ferromagnetic pinned layer 30, but only changes the magnetic moment of the ferromagnetic free layer 50 alone. In addition, the dynamic range of the tunneling magneto-resistance sensor can be regulated and controlled only by applying smaller vertical voltage to the film stack structure of the tunneling magneto-resistance sensor, the breakdown of the device cannot be caused, and the service life of the device can be prolonged.
The invention utilizes the principle that the magnetic anisotropy field of the ferromagnetic free layer in the tunneling magneto-resistance can be regulated by an electric field, and controls the size of the magneto-resistance effect and the saturation magnetic field by applying the electric field to the upper electrode and the lower electrode, thereby realizing the regulation and control of the linear detection range of the magneto-resistance sensor and the regulation and control of the internal magnetization direction of the magneto-resistance material by the electric field.
In embodiments of the present invention, the strength of the voltage applied to the oxide layer may be determined and controlled based on one or more conditions. These conditions are, for example: the materials and the lattice structures of the oxide layer and the ferromagnetic free layer, the quality of an interface between the oxide layer and the ferromagnetic free layer, the shape and the size of the tunneling magneto-resistance sensor and the like. By controlling the applied voltage, the magnetic anisotropy change degree of the ferromagnetic free layer is regulated and controlled, and the accurate regulation and control of the measuring range of the tunneling magneto-resistance sensor are further realized. Fig. 3 is a schematic diagram of magnetic moment variation of a tunneling magnetoresistive sensor under electric field regulation according to an embodiment of the present invention. As shown in fig. 3, the voltage intensity applied to the oxide layer is controlled, the magnetic moment direction of the ferromagnetic free layer changes accordingly, the easy axis direction of the ferromagnetic free layer inclines with the "in-plane" direction, and the range of the tunneling magnetoresistive sensor is between the minimum range and the maximum range.
In the preferred embodiment, the antiferromagnetic pinning layer 20, the ferromagnetic pinned layer 30, the tunneling insulating layer 40, and the ferromagnetic free layer 50 are all cylindrical in shape. Because each magnetic resistance film layer has shape magnetic anisotropy, some properties of magnetic substances change along with the change of the shape, different shapes can present different properties, and the magnetic moment direction is easier to face the long axis direction, namely when the magnetic resistance film layer is rectangular, the magnetic moment can face the long edge. Each magnetic resistance film layer is designed to be in a cylindrical shape, the magnetic moment of each magnetic resistance film layer can face to any direction, the magnetic resistance film layer is not influenced by the anisotropy of shape magnetism, the voltage intensity applied to the oxide layer 60 is regulated, and the magnetic moment direction of the ferromagnetic free layer 50 can face to any direction.
According to the tunneling magneto-resistance sensor, the oxide layer is designed between the upper electrode and the ferromagnetic free layer, and the controllable electric field is utilized to drive oxygen ions in the oxide layer to move, so that the magnetic anisotropy of the ferromagnetic free layer is changed, the dynamic range (measuring range) of the tunneling magneto-resistance sensor is regulated, and the requirements under different application environments can be met. In addition, the invention can realize the nonvolatile regulation and control of the dynamic range of the tunneling magneto-resistance sensor only by applying smaller vertical voltage to the film stack structure of the tunneling magneto-resistance sensor, and cannot cause breakdown on the device.
Fig. 4 is a flowchart of a method for manufacturing a tunneling magnetoresistive sensor according to an embodiment of the invention. As shown in fig. 4, an embodiment of the present invention provides a method for manufacturing a tunneling magnetoresistive sensor, including the following steps:
and S10, growing a conductive layer serving as a lower electrode on the substrate.
Firstly, cleaning a substrate, removing organic matters on the surface of the substrate by using acetone, removing the acetone by using ethanol deionized water, and then heating the substrate to remove the ethanol deionized water. And then depositing and growing Ta layers and CuN layers on the substrate to form conductive layers with the Ta layers and the CuN layers alternating. Preferably, the Ta layer has a thickness of 5-10nm and the CuN layer has a thickness of 10 nm.
S11, a perpendicular magnetic anisotropic tunnel junction is formed on the conductive layer as the lower electrode.
And (5) placing the structure formed in the step (S10) in a magnetron sputtering cavity, and carrying out layer-by-layer growth according to the required magnetoresistive film structure to form a stack layer.
Specifically, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a tunneling insulating layer and a ferromagnetic free layer are sequentially grown on a conductive layer as a lower electrode, and the thicknesses of the antiferromagnetic pinning layer, the ferromagnetic pinned layer, the tunneling insulating layer and the ferromagnetic free layer are adjusted to obtain a corresponding perpendicular magnetic anisotropy tunnel junction structure (P-MTJ). The ferromagnetic free layer can be made of any one of CoFeB, CoFe, NiFe, FeGaB, Co, Fe, NiFeCo and CoNbZr, or the ferromagnetic free layer has a multilayer composite structure. The ferromagnetic pinned layer can be made of CoFeB, CoFe, NiFe, FeGaB, Co, Fe, NiFeCo, CoNbZr.
And S12, growing an oxide layer on the vertical magnetic anisotropic tunnel junction.
And growing an oxide layer containing the metal oxide on the ferromagnetic free layer by adopting an oxygen-doped metal material. The metal material can adopt any one of Ta, Zn, Ag, Al, Cu, Pt, W and Ti.
And S13, growing a conductive layer serving as an upper electrode on the oxide layer to form a magnetoresistive film stack structure.
And depositing and growing a Ta layer on the ferromagnetic free layer, and covering the Ru layer on the Ta layer. The conductive layer of the upper electrode covers the Ru layer, the compact characteristic of Ru can protect the magnetic resistance film stack structure, and the Ru layer oxidized by the outside air still has the conductive characteristic.
The preparation method of the tunneling magneto-resistance sensor further comprises the following steps:
and carrying out micro-nano processing on the magnetoresistive film stack structure, and preparing a required circuit diagram on the magnetoresistive film stack structure by adopting photoetching, evaporation and stripping processes. Specifically, a photoetching process is carried out on the magnetoresistive film stack structure according to a set structure to obtain a required device structure, the device is placed in an electron beam evaporation cavity for evaporation of an electrode, and gold, copper and the like can be used as evaporation electrode materials. And subsequently, stripping redundant electrodes of the device to obtain the corresponding tunneling magneto-resistance sensor device with the adjustable dynamic range.
The preparation method of the tunneling magneto-resistance sensor adopts the single film stack to form the perpendicular magnetic anisotropic tunnel junction (P-MTJ), adopts the metal material doped with oxygen to grow and form the oxide layer, and has simple integration process and low cost.
The embodiment of the invention also provides a using method of the tunneling magneto-resistance sensor, which is applied to the tunneling magneto-resistance sensor, and the method comprises the following steps: and applying voltage to an upper electrode and a lower electrode of the tunneling magneto-resistance sensor, namely directly applying voltage to the upper electrode and the lower electrode of the magneto-resistance film stack structure. The voltage is applied to the upper electrode and the lower electrode to provide voltage for the oxide layer, and oxygen ions in the oxide layer migrate to the interface of the oxide layer and the ferromagnetic free layer under the action of an electric field, so that the magnetic anisotropy of the ferromagnetic free layer is changed, the direction of the magnetic moment of the ferromagnetic free layer is changed, the dynamic range of a tunnel junction of the tunneling magneto-resistance sensor is changed, and the measuring range of the tunneling magneto-resistance sensor is changed. During the use process, the voltage intensity applied to the upper electrode and the lower electrode can be adjusted to regulate and control the change degree of the magnetic anisotropy of the ferromagnetic free layer. In particular, the intensity of the voltage applied to the oxide layer may be determined and controlled according to one or more conditions, such as: the materials and the lattice structures of the oxide layer and the ferromagnetic free layer, the quality of an interface between the oxide layer and the ferromagnetic free layer, the shape and the size of the tunneling magneto-resistance sensor and the like. By controlling the applied voltage, the magnetic anisotropy of the ferromagnetic free layer is regulated and controlled, and the accurate regulation and control of the measuring range of the tunneling magneto-resistance sensor are further realized.
While the embodiments of the present invention have been described in detail with reference to the accompanying drawings, the embodiments of the present invention are not limited to the details of the above embodiments, and various simple modifications can be made to the technical solution of the embodiments of the present invention within the technical idea of the embodiments of the present invention, and the simple modifications are within the scope of the embodiments of the present invention.
Claims (13)
1. A tunneling magneto-resistance sensor comprises a lower electrode, an anti-ferromagnetic pinning layer, a ferromagnetic pinned layer, a tunneling insulation layer, a ferromagnetic free layer and an upper electrode from bottom to top in sequence, and is characterized by further comprising an oxidation layer arranged between the upper electrode and the ferromagnetic free layer;
under the condition that the voltage with controllable strength is applied to the oxide layer, oxygen ions in the oxide layer migrate to the interface between the oxide layer and the ferromagnetic free layer under the action of an electric field, and the magnetic anisotropy of the ferromagnetic free layer is changed, so that the dynamic range of a tunnel junction of the tunneling magneto-resistance sensor is changed.
2. A tunneling magnetoresistive sensor as claimed in claim 1, wherein the material of the oxide layer comprises a metal and an oxide of the metal.
3. The tunneling magnetoresistive sensor of claim 2, wherein the material of the oxide layer is tantalum and tantalum oxide; or zinc and zinc oxide; or silver and silver oxide; or aluminum and aluminum oxide; or copper and copper oxide; or titanium and titanium oxide.
4. The tunneling magnetoresistive sensor of claim 1, wherein the antiferromagnetic pinning layer, ferromagnetic pinned layer, tunneling insulating layer, and ferromagnetic free layer are all cylindrical in shape.
5. A tunneling magnetoresistive sensor according to claim 1, wherein the strength of the voltage applied to the oxide layer is determined according to at least one of the following conditions:
the materials and lattice structures of the oxide layer and the ferromagnetic free layer;
the quality of the interface between the oxide layer and the ferromagnetic free layer;
shape and size of the tunneling magnetoresistive sensor.
6. A method of making a tunneling magnetoresistive sensor, the method comprising:
growing a conductive layer serving as a lower electrode on a substrate;
manufacturing a vertical magnetic anisotropic tunnel junction on the conductive layer as the lower electrode;
growing an oxide layer on the perpendicular magnetic anisotropy tunnel junction;
and growing a conductive layer serving as an upper electrode on the oxide layer to form a magnetoresistive film stack structure.
7. The method for manufacturing a tunneling magneto-resistance sensor according to claim 6, wherein the step of forming a perpendicular magnetic anisotropic tunnel junction on the conductive layer as the lower electrode comprises:
and sequentially growing an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a tunneling insulating layer and a ferromagnetic free layer on the conductive layer as the lower electrode to form a perpendicular magnetic anisotropic tunnel junction.
8. The method for manufacturing a tunneling magnetoresistive sensor according to claim 7, wherein growing an oxide layer on the perpendicular magnetic anisotropic tunnel junction comprises:
and growing an oxide layer containing the oxide of the metal material on the ferromagnetic free layer by adopting the oxygen-doped metal material.
9. The method for manufacturing a tunneling magneto-resistive sensor according to claim 8, wherein the metal material is any one of Ta, Zn, Ag, Al, Cu, Pt, W and Ti.
10. The method for manufacturing a tunneling magneto-resistance sensor according to claim 7, wherein the ferromagnetic free layer is made of one of CoFeB, CoFe, NiFe, FeGaB, Co, Fe, NiFeCo and CoNbZr, or the ferromagnetic free layer is made of a multilayer composite structure;
the ferromagnetic pinned layer is made of any one of CoFeB, CoFe, NiFe, FeGaB, Co, Fe, NiFeCo and CoNbZr.
11. The method of making a tunneling magnetoresistive sensor according to claim 6, further comprising:
and carrying out micro-nano processing on the magnetoresistive film stack structure, and preparing a required circuit diagram on the magnetoresistive film stack structure by adopting photoetching, evaporation and stripping processes.
12. A method of using a tunneling magnetoresistive sensor according to any of claims 1-5, the method comprising:
applying voltage to an upper electrode and a lower electrode of the tunneling magneto-resistance sensor;
and adjusting the strength of the voltage applied to the upper electrode and the lower electrode so as to regulate and control the magnetic anisotropy change degree of the ferromagnetic free layer of the tunneling magneto-resistance sensor.
13. The method of using a tunneling magnetoresistive sensor according to claim 12, wherein said adjusting the voltage strength applied to the upper electrode and the lower electrode comprises:
determining the voltage intensity applied to the upper electrode and the lower electrode based on at least one of the following conditions:
the materials and lattice structures of the oxide layer and the ferromagnetic free layer of the tunneling magneto-resistance sensor;
the interface quality between the oxide layer and the ferromagnetic free layer of the tunneling magneto-resistance sensor;
the tunneling magneto-resistance sensor is in shape and size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111460490.XA CN113866691B (en) | 2021-12-02 | 2021-12-02 | Tunneling magneto-resistance sensor and preparation method and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111460490.XA CN113866691B (en) | 2021-12-02 | 2021-12-02 | Tunneling magneto-resistance sensor and preparation method and using method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113866691A true CN113866691A (en) | 2021-12-31 |
| CN113866691B CN113866691B (en) | 2022-09-23 |
Family
ID=78985599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111460490.XA Active CN113866691B (en) | 2021-12-02 | 2021-12-02 | Tunneling magneto-resistance sensor and preparation method and using method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113866691B (en) |
Citations (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079936A (en) * | 2002-08-22 | 2004-03-11 | Fujitsu Ltd | Laminated film having ferromagnetic tunnel junction, manufacturing method thereof, magnetic sensor, magnetic recorder, and magnetic memory unit |
| US20060103991A1 (en) * | 2004-11-15 | 2006-05-18 | Hitachi Global Storage Technologies | Magnetoresistive head using longitudinal biasing method with 90-degree magnetic interlayer coupling and manufacturing method thereof |
| US20080112093A1 (en) * | 2006-11-14 | 2008-05-15 | Fujitsu Limited | Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device |
| US20090027810A1 (en) * | 2007-07-23 | 2009-01-29 | Magic Technologies, Inc. | High performance MTJ element for STT-RAM and method for making the same |
| US20110163739A1 (en) * | 2008-09-12 | 2011-07-07 | Hitachi Metals, Ltd. | Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device |
| CN102721427A (en) * | 2012-06-20 | 2012-10-10 | 无锡乐尔科技有限公司 | Thin-film magnetoresistive sensor element and thin-film magnetoresistive bridge |
| US20120267736A1 (en) * | 2011-04-22 | 2012-10-25 | Kiseok Moon | Method And System For Providing A Magnetic Junction Having An Engineered Barrier Layer |
| US20140242418A1 (en) * | 2012-04-20 | 2014-08-28 | Alexander Mikhailovich Shukh | Scalable Magnetoresistive Element |
| US20150137292A1 (en) * | 2012-08-07 | 2015-05-21 | The Regents Of The University Of California | Magnetoresistance sensor with perpendicular anisotropy |
| US20160202330A1 (en) * | 2013-09-09 | 2016-07-14 | Hitachi, Ltd. | Magnetic sensor element |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
| CN108336223A (en) * | 2017-12-08 | 2018-07-27 | 北京航空航天大学青岛研究院 | Memory device, the preparation method of memory device and electronic equipment |
| CN207925523U (en) * | 2017-12-08 | 2018-09-28 | 北京航空航天大学青岛研究院 | Memory device and electronic equipment |
| US20190027680A1 (en) * | 2018-07-06 | 2019-01-24 | Xi'an Jiaotong University | Magnetic tunnel junction device and magnetic random access memory |
| CN109273595A (en) * | 2017-07-18 | 2019-01-25 | 恩智浦有限公司 | The method for forming tunnel magnetoresistive (TMR) element and TMR sensor element |
| CN109545956A (en) * | 2018-11-05 | 2019-03-29 | 电子科技大学 | A kind of regulatable anisotropic magnetoresistive sensor of voltage and preparation method thereof |
| CN110109039A (en) * | 2019-05-16 | 2019-08-09 | 中国科学院微电子研究所 | The regulation method and system of tunneling magnetic resistance sensor |
| CN110176534A (en) * | 2019-06-03 | 2019-08-27 | 西安交通大学 | Adjustable tunneling junction magnetoresistive sensor of measurement range and preparation method thereof |
| CN110212085A (en) * | 2019-06-03 | 2019-09-06 | 西安交通大学 | Adjustable giant magnetoresistance sensor of measurement range and preparation method thereof |
| CN110927637A (en) * | 2019-11-30 | 2020-03-27 | 北京航空航天大学青岛研究院 | Three-axis MTJ magnetic field sensor and preparation method thereof |
| CN110931633A (en) * | 2019-11-15 | 2020-03-27 | 北京航空航天大学 | Magnetic tunnel junction memory cell and memory |
| CN210379112U (en) * | 2019-06-28 | 2020-04-21 | 厦门大学 | Electrically adjustable anisotropic tunneling magnetoresistance structure |
| CN111341907A (en) * | 2020-02-27 | 2020-06-26 | 北京航空航天大学 | Magnetic tunnel junction, memory cell and magnetic random access memory |
| CN111505544A (en) * | 2020-04-22 | 2020-08-07 | 西安交通大学 | TMR magnetic field sensor capable of reconstructing sensitive direction and preparation method |
| US11005034B1 (en) * | 2019-11-22 | 2021-05-11 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same |
| CN113314166A (en) * | 2021-05-14 | 2021-08-27 | 致真存储(北京)科技有限公司 | Method for controlling pinning layer domain structure to realize multi-state storage in giant/tunneling magnetoresistance structure and multi-state memory |
-
2021
- 2021-12-02 CN CN202111460490.XA patent/CN113866691B/en active Active
Patent Citations (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079936A (en) * | 2002-08-22 | 2004-03-11 | Fujitsu Ltd | Laminated film having ferromagnetic tunnel junction, manufacturing method thereof, magnetic sensor, magnetic recorder, and magnetic memory unit |
| US20060103991A1 (en) * | 2004-11-15 | 2006-05-18 | Hitachi Global Storage Technologies | Magnetoresistive head using longitudinal biasing method with 90-degree magnetic interlayer coupling and manufacturing method thereof |
| US20080112093A1 (en) * | 2006-11-14 | 2008-05-15 | Fujitsu Limited | Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device |
| CN101183704A (en) * | 2006-11-14 | 2008-05-21 | 富士通株式会社 | Tunneling magnetoresistance device, its manufacture method, magnetic head and magnetic memory using tmr device |
| US20090027810A1 (en) * | 2007-07-23 | 2009-01-29 | Magic Technologies, Inc. | High performance MTJ element for STT-RAM and method for making the same |
| US20110163739A1 (en) * | 2008-09-12 | 2011-07-07 | Hitachi Metals, Ltd. | Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device |
| US20120267736A1 (en) * | 2011-04-22 | 2012-10-25 | Kiseok Moon | Method And System For Providing A Magnetic Junction Having An Engineered Barrier Layer |
| US20140242418A1 (en) * | 2012-04-20 | 2014-08-28 | Alexander Mikhailovich Shukh | Scalable Magnetoresistive Element |
| CN102721427A (en) * | 2012-06-20 | 2012-10-10 | 无锡乐尔科技有限公司 | Thin-film magnetoresistive sensor element and thin-film magnetoresistive bridge |
| US20150137292A1 (en) * | 2012-08-07 | 2015-05-21 | The Regents Of The University Of California | Magnetoresistance sensor with perpendicular anisotropy |
| US20160202330A1 (en) * | 2013-09-09 | 2016-07-14 | Hitachi, Ltd. | Magnetic sensor element |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
| CN109273595A (en) * | 2017-07-18 | 2019-01-25 | 恩智浦有限公司 | The method for forming tunnel magnetoresistive (TMR) element and TMR sensor element |
| CN108336223A (en) * | 2017-12-08 | 2018-07-27 | 北京航空航天大学青岛研究院 | Memory device, the preparation method of memory device and electronic equipment |
| CN207925523U (en) * | 2017-12-08 | 2018-09-28 | 北京航空航天大学青岛研究院 | Memory device and electronic equipment |
| US20190027680A1 (en) * | 2018-07-06 | 2019-01-24 | Xi'an Jiaotong University | Magnetic tunnel junction device and magnetic random access memory |
| CN109545956A (en) * | 2018-11-05 | 2019-03-29 | 电子科技大学 | A kind of regulatable anisotropic magnetoresistive sensor of voltage and preparation method thereof |
| CN110109039A (en) * | 2019-05-16 | 2019-08-09 | 中国科学院微电子研究所 | The regulation method and system of tunneling magnetic resistance sensor |
| CN110176534A (en) * | 2019-06-03 | 2019-08-27 | 西安交通大学 | Adjustable tunneling junction magnetoresistive sensor of measurement range and preparation method thereof |
| CN110212085A (en) * | 2019-06-03 | 2019-09-06 | 西安交通大学 | Adjustable giant magnetoresistance sensor of measurement range and preparation method thereof |
| CN210379112U (en) * | 2019-06-28 | 2020-04-21 | 厦门大学 | Electrically adjustable anisotropic tunneling magnetoresistance structure |
| CN110931633A (en) * | 2019-11-15 | 2020-03-27 | 北京航空航天大学 | Magnetic tunnel junction memory cell and memory |
| US11005034B1 (en) * | 2019-11-22 | 2021-05-11 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same |
| CN110927637A (en) * | 2019-11-30 | 2020-03-27 | 北京航空航天大学青岛研究院 | Three-axis MTJ magnetic field sensor and preparation method thereof |
| CN111341907A (en) * | 2020-02-27 | 2020-06-26 | 北京航空航天大学 | Magnetic tunnel junction, memory cell and magnetic random access memory |
| CN111505544A (en) * | 2020-04-22 | 2020-08-07 | 西安交通大学 | TMR magnetic field sensor capable of reconstructing sensitive direction and preparation method |
| CN113314166A (en) * | 2021-05-14 | 2021-08-27 | 致真存储(北京)科技有限公司 | Method for controlling pinning layer domain structure to realize multi-state storage in giant/tunneling magnetoresistance structure and multi-state memory |
Non-Patent Citations (3)
| Title |
|---|
| DONGXIANG HAN 等: "A Mems Pressure Sensor Based on Double- Ended Tuning Fork Resonator with on-Chip Thermal Compensation", 《2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)》 * |
| KUN WANG 等: "Optimized Differential Self-Inductance Displacement Sensor for Magnetic Bearings: Design, Analysis and Experiment", 《IEEE SENSORS JOURNAL》 * |
| 由臣等: "利用金属掩模法制备钉扎型磁性隧道结", 《物理学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113866691B (en) | 2022-09-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6105817B2 (en) | Nanomagnetic multilayer film for temperature sensor and its manufacturing method | |
| EP3092505B1 (en) | Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields | |
| EP2696209B1 (en) | Single-chip push-pull bridge-type magnetic field sensor | |
| CN102270736B (en) | Magnetic nano-multilayer film used for magnetic sensor and manufacturing method for magnetic nano-multilayer film | |
| EP1105743B1 (en) | Method for manufacturing a magnetic sensor device | |
| CN100505360C (en) | Magnetic multilayer film with linear magnetoresistance effect and its application | |
| CN110212085B (en) | Giant magnetoresistance sensor with adjustable measurement range and preparation method thereof | |
| JP2002514770A (en) | Magnetic multilayer sensor and Wheatstone bridge using the same | |
| WO2004109725A1 (en) | Method of manufacturing a device with a magnetic layer-structure | |
| CN110176534A (en) | Adjustable tunneling junction magnetoresistive sensor of measurement range and preparation method thereof | |
| CN109545956A (en) | A kind of regulatable anisotropic magnetoresistive sensor of voltage and preparation method thereof | |
| US11467232B2 (en) | Magnetoresistive sensor and fabrication method for a magnetoresistive sensor | |
| US8164331B2 (en) | Magnetic field measurement method and magnetic sensor | |
| JP2003525528A (en) | Apparatus for measuring magnetic field and method for producing apparatus for measuring magnetic field | |
| US8164330B2 (en) | Magnetic sensor and magnetic field strength measurement method saturating magnetization of magnetization-free layer | |
| CN113866691B (en) | Tunneling magneto-resistance sensor and preparation method and using method thereof | |
| CN110612582B (en) | Magnetic device | |
| CN103383441A (en) | Digital spin valve magnetic field sensor and manufacturing technology thereof | |
| US11385305B2 (en) | Magnetic sensor array with dual TMR film | |
| CN1356559A (en) | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field | |
| CN113866690B (en) | Three-axis tunneling magneto-resistance sensor and preparation method and use method thereof | |
| CN113316725A (en) | Magnetic sensor array with laser annealed single TMR film and characterization thereof | |
| CN101692375A (en) | Method for improving stability of bias field in multi-layer membrane structure in CoFe/AlOx/CoFe/IrMn spin valve structure | |
| KR100308697B1 (en) | Magnetoresistive sensor using bidirectional current with arbitrary angles | |
| CN2556792Y (en) | Tunnel effect magneto-resistance device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |