CN114284384B - Preparation method based on zinc oxide-cuprous phosphide photoelectric detector - Google Patents
Preparation method based on zinc oxide-cuprous phosphide photoelectric detector Download PDFInfo
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- CN114284384B CN114284384B CN202111617503.XA CN202111617503A CN114284384B CN 114284384 B CN114284384 B CN 114284384B CN 202111617503 A CN202111617503 A CN 202111617503A CN 114284384 B CN114284384 B CN 114284384B
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- zinc oxide
- corundum
- tube
- aluminum
- copper foil
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 14
- 239000011701 zinc Substances 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000011787 zinc oxide Substances 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011889 copper foil Substances 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 39
- 239000010431 corundum Substances 0.000 claims description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000002207 thermal evaporation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a preparation method based on a zinc oxide-cuprous phosphide photoelectric detector, which comprises the steps of firstly growing cuprous phosphide on the surface of a copper foil, and then depositing an aluminum-doped n-type zinc oxide film on the surface of the cuprous phosphide; finally, depositing an aluminum electrode on the surface of the zinc oxide to obtain the device. The photoelectric device formed by depositing cuprous phosphide and zinc oxide on the surface of the copper foil has the advantages of simple manufacturing method, high device performance repeatability, rich raw materials required for preparing the device, simple preparation, low cost and good visible light detection performance.
Description
Technical Field
The invention belongs to the technical field of materials and devices, and particularly relates to a preparation method of a photoelectric detection device.
Background
Zinc oxide is an n-type transparent conductive film material, cuprous phosphide is a p-type semiconductor material, both of which have photoconductive responses, and can be used for preparing light detecting devices. The device for realizing the light detection by utilizing single zinc oxide or cuprous phosphide due to the change of illumination resistance has poor photoelectric effect due to the influence of the electrical property of the material and the adsorption of the gas surface. The two are combined to prepare the device with the pn junction structure, so that the photoelectric detection performance is improved. In the preparation of the device, in order to obtain the device with better performance, the patent uses aluminum doped zinc oxide to replace zinc oxide intrinsic semiconductor material. The prepared device can detect visible light.
Disclosure of Invention
Aiming at the defects of the existing researches, the invention provides a preparation method of a photoelectric detector based on zinc oxide and cuprous phosphide. Firstly, growing cuprous phosphide on the surface of a copper foil, and then depositing an aluminum-doped n-type zinc oxide film on the surface of the cuprous phosphide; finally, depositing an aluminum electrode on the surface of the zinc oxide to obtain the device.
Step (1), sodium hypophosphite is put into a corundum boat, and then copper foil with the thickness of 250-1000 microns is covered on the surface of the corundum boat, wherein the square centimeter of the surface of the corundum boat is 1-5;
step (2), placing the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon with 1 atmosphere pressure, and sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 280-300 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; the temperature is raised to 280-300 ℃ and then the heat is preserved for 30-60 min; naturally cooling to room temperature, vacuumizing a corundum tube to remove residual gas in the tube, and taking out copper foil with cuprous phosphide grown on the surface of the product;
step (4), taking the product of the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.1-1.0Pa, the oxygen flow is 1-5sccm, the argon flow is 20-50sccm, the sputtering voltage is 300-450V, the current is 30-60mA, the sputtering time is 20-40min, and the target material is an aluminum doped metal zinc target; the thickness of the prepared zinc oxide film is 50-200nm;
step (5), depositing an aluminum electrode on the surface of the zinc oxide film obtained in the step (4) through a thermal evaporation method; vacuum degree of thermal evaporation equipment 5 x 10 -4 Pa, deposition rate 20nm/min.
Preferably, the copper foil has a thickness of 600 μm.
Preferably, the aluminum doping amount in the aluminum-doped metallic zinc target is 3%.
Preferably, the corundum tube is heated to 280 ℃ by a tube furnace.
The aluminum electrode in this patent may be a silver or gold electrode.
The copper substrate in this patent may also be a silicon substrate.
The invention has the advantages that: the photoelectric device formed by depositing cuprous phosphide and zinc oxide on the surface of the copper foil has the advantages of simple manufacturing method, high device performance repeatability, rich raw materials required by the device preparation, simple preparation, low cost and good visible light detection performance.
Drawings
FIG. 1 is a schematic diagram of the structure obtained by the present invention.
Detailed Description
Embodiment one:
preparation method based on zinc oxide-cuprous phosphide photoelectric detector
Step (1), sodium hypophosphite is put into a corundum boat, and then copper foil with the thickness of 250 micrometers is covered on the surface of the corundum boat, wherein the square centimeter is 1;
step (2), placing the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon with 1 atmosphere pressure, and sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 280 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; heating to 280 deg.c, maintaining for 30min; naturally cooling to room temperature, vacuumizing a corundum tube to remove residual gas in the tube, and taking out copper foil with cuprous phosphide grown on the surface of the product;
step (4), taking the product of the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.1Pa, the oxygen flow is 1sccm, the argon flow is 20sccm, the sputtering voltage is 300V, the current is 30mA, the sputtering time is 20min, and the target material is an aluminum doped metal zinc target; the thickness of the prepared zinc oxide film is 50nm;
step (5), depositing an aluminum electrode on the surface of the zinc oxide film obtained in the step (4) through a thermal evaporation method; vacuum degree of thermal evaporation equipment 5 x 10 -4 Pa, deposition rate 20nm/min. As shown in fig. 1, the structure of the present invention is schematically shown.
Embodiment two:
preparation method based on zinc oxide-cuprous phosphide photoelectric detector
Step (1), sodium hypophosphite is put into a corundum boat, and then copper foil with the thickness of 500 micrometers is covered on the surface of the corundum boat, wherein the square centimeter is 3;
step (2), placing the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon with 1 atmosphere pressure, and sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 290 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; keeping the temperature at 290 ℃ for 40min; naturally cooling to room temperature, vacuumizing a corundum tube to remove residual gas in the tube, and taking out copper foil with cuprous phosphide grown on the surface of the product;
step (4), taking the product of the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.6Pa, the oxygen flow is 3sccm, the argon flow is 40sccm, the sputtering voltage is 400V, the current is 40mA, the sputtering time is 30min, and the target material is an aluminum doped metal zinc target; the thickness of the prepared zinc oxide film is 120nm;
step (5), depositing a gold electrode on the surface of the zinc oxide film obtained in the step (4) through a thermal evaporation method; vacuum degree of thermal evaporation equipment 5 x 10 -4 Pa, deposition rate 20nm/min.
Embodiment III:
preparation method based on zinc oxide-cuprous phosphide photoelectric detector
Step (1), sodium hypophosphite is put into a corundum boat, and then copper foil with the thickness of 1000 microns is covered on the surface of the corundum boat, wherein the square centimeter is 5;
step (2), placing the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon with 1 atmosphere pressure, and sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 300 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; keeping the temperature at 300 ℃ for 60min; naturally cooling to room temperature, vacuumizing a corundum tube to remove residual gas in the tube, and taking out copper foil with cuprous phosphide grown on the surface of the product;
step (4), taking the product of the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 1.0Pa, the oxygen flow is 5sccm, the argon flow is 50sccm, the sputtering voltage is 450V, the current is 60mA, the sputtering time is 40min, and the target material is an aluminum doped metal zinc target; the thickness of the prepared zinc oxide film is 200nm;
step (5), depositing a silver electrode on the surface of the zinc oxide film obtained in the step (4) through a thermal evaporation method; vacuum degree of thermal evaporation equipment 5 x 10 -4 Pa, deposition rate 20nm/min.
Claims (5)
1. A preparation method based on zinc oxide-cuprous phosphide photoelectric detector is characterized by comprising the following steps: the method specifically comprises the following steps:
step (1), sodium hypophosphite is put into a corundum boat, and then copper foil with the thickness of 250-1000 microns is covered on the surface of the corundum boat, wherein the square centimeter of the surface of the corundum boat is 1-5;
step (2), placing the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon with 1 atmosphere pressure, and sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 280-300 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; the temperature is raised to 280-300 ℃ and then the heat is preserved for 30-60 min; naturally cooling to room temperature, vacuumizing a corundum tube to remove residual gas in the tube, and taking out copper foil with cuprous phosphide grown on the surface of the product;
step (4), taking the product of the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.1-1.0Pa, the oxygen flow is 1-5sccm, the argon flow is 20-50sccm, the sputtering voltage is 300-450V, the current is 30-60mA, the sputtering time is 20-40min, and the target material is an aluminum doped and metal zinc target; the thickness of the prepared zinc oxide film is 50-200nm;
step (5), depositing an aluminum electrode on the surface of the zinc oxide film obtained in the step (4) through a thermal evaporation method; vacuum degree of thermal evaporation equipment 5 x 10 -4 Pa, deposition rate 20nm/min.
2. The method for manufacturing a photoelectric detection device according to claim 1, wherein: the thickness of the copper foil is 600 micrometers.
3. The method for manufacturing a photoelectric detection device according to claim 1, wherein: the corundum tube is heated to 280 ℃ by a tube furnace.
4. The method for manufacturing a photoelectric detection device according to claim 1, wherein: the aluminum electrode is also replaced by a silver electrode or a gold electrode.
5. The method for manufacturing a photoelectric detection device according to claim 1, wherein: the aluminum doping amount in the aluminum doped zinc metal target is 3%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111617503.XA CN114284384B (en) | 2021-12-27 | 2021-12-27 | Preparation method based on zinc oxide-cuprous phosphide photoelectric detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111617503.XA CN114284384B (en) | 2021-12-27 | 2021-12-27 | Preparation method based on zinc oxide-cuprous phosphide photoelectric detector |
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| CN114284384A CN114284384A (en) | 2022-04-05 |
| CN114284384B true CN114284384B (en) | 2024-01-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10150212A (en) * | 1996-11-20 | 1998-06-02 | Matsushita Electric Ind Co Ltd | Precursor for semiconductor thin film formation use and manufacture of semiconductor thin film |
| CN107851717A (en) * | 2015-06-10 | 2018-03-27 | 太阳涂料有限公司 | Photovoltaic devices and part |
| CN113322393A (en) * | 2021-05-28 | 2021-08-31 | 杭州电子科技大学 | Preparation method of copper-cuprous phosphide eutectic mixture |
| CN113388392A (en) * | 2021-05-28 | 2021-09-14 | 杭州电子科技大学 | Preparation method of fluorescent material |
-
2021
- 2021-12-27 CN CN202111617503.XA patent/CN114284384B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10150212A (en) * | 1996-11-20 | 1998-06-02 | Matsushita Electric Ind Co Ltd | Precursor for semiconductor thin film formation use and manufacture of semiconductor thin film |
| CN107851717A (en) * | 2015-06-10 | 2018-03-27 | 太阳涂料有限公司 | Photovoltaic devices and part |
| CN113322393A (en) * | 2021-05-28 | 2021-08-31 | 杭州电子科技大学 | Preparation method of copper-cuprous phosphide eutectic mixture |
| CN113388392A (en) * | 2021-05-28 | 2021-09-14 | 杭州电子科技大学 | Preparation method of fluorescent material |
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| CN114284384A (en) | 2022-04-05 |
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