CN114284384A - Preparation method of photoelectric detector based on zinc oxide-cuprous phosphide - Google Patents
Preparation method of photoelectric detector based on zinc oxide-cuprous phosphide Download PDFInfo
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- CN114284384A CN114284384A CN202111617503.XA CN202111617503A CN114284384A CN 114284384 A CN114284384 A CN 114284384A CN 202111617503 A CN202111617503 A CN 202111617503A CN 114284384 A CN114284384 A CN 114284384A
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- zinc oxide
- corundum
- aluminum
- oxide film
- tube
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 12
- 239000011701 zinc Substances 0.000 title claims abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000011787 zinc oxide Substances 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011889 copper foil Substances 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052593 corundum Inorganic materials 0.000 claims description 40
- 239000010431 corundum Substances 0.000 claims description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000002207 thermal evaporation Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a preparation method of a photoelectric detector based on zinc oxide-cuprous phosphide, which comprises the steps of firstly growing cuprous phosphide on the surface of a copper foil, and then depositing an aluminum-doped n-type zinc oxide film on the surface of the cuprous phosphide; and finally depositing an aluminum electrode on the surface of the zinc oxide to obtain the device. The photoelectric device formed by depositing the cuprous phosphide and the zinc oxide on the surface of the copper foil has the advantages of simple manufacturing method, high repeatability of the performance of the device, rich raw materials required by the preparation of the device, simple preparation, low cost and better visible light detection performance.
Description
Technical Field
The invention belongs to the technical field of materials and devices, and particularly relates to a preparation method of a photoelectric detection device.
Background
The zinc oxide is an n-type transparent conductive film material, the cuprous phosphide is a p-type semiconductor material, and both the zinc oxide and the cuprous phosphide have photoconductive response and can be used for preparing an optical detection device. The device for realizing optical detection by using single zinc oxide or cuprous phosphide due to change of illumination resistance has poor photoelectric effect due to influence of self electrical property and gas surface adsorption on the material. The two are combined to prepare the device with the structure of the pn junction, and the photoelectric detection performance is improved to some extent. In the preparation of the device, in order to obtain a device with better performance, the zinc oxide intrinsic semiconductor material is replaced by the aluminum-doped zinc oxide. The prepared device can detect visible light.
Disclosure of Invention
Aiming at the defects of the existing research, the invention provides a preparation method of a photoelectric detector based on zinc oxide and cuprous phosphide. Firstly, growing cuprous phosphide on the surface of a copper foil, and then depositing an aluminum-doped n-type zinc oxide film on the surface of the cuprous phosphide; and finally depositing an aluminum electrode on the surface of the zinc oxide to obtain the device.
Step (1), sodium hypophosphite is placed into a corundum boat, and then copper foil with the thickness of 250-;
step (2), putting the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon at 1 atmosphere, and then sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 280-300 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; keeping the temperature after the temperature is increased to 280-300 ℃, wherein the heat preservation time is 30-60 min; then naturally cooling to room temperature, vacuumizing the corundum tube to remove residual gas in the corundum tube, and taking out the copper foil with cuprous phosphide growing on the surface of the product;
step (4), taking the product obtained in the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.1-1.0Pa, the oxygen flow is 1-5sccm, the argon flow is 20-50sccm, the sputtering voltage is 300-; the thickness of the prepared zinc oxide film is 50-200 nm;
step (5), depositing an aluminum electrode on the surface of the n-type zinc oxide film on the surface of the zinc oxide film obtained in the step (4) by a thermal evaporation method; vacuum degree of thermal evaporation equipment is 5X 10-4Pa, deposition speed 20 nm/min.
Preferably, the copper foil has a thickness of 600 μm.
Preferably, the aluminum doping amount in the aluminum-doped metallic zinc target is 3%.
Preferably, the corundum tube is heated to 280 ℃ by a tube furnace.
The aluminum electrode in this patent can also be a silver or gold electrode.
The copper substrate in this patent may also be a silicon substrate.
The invention has the advantages that: the photoelectric device formed by depositing the cuprous phosphide and the zinc oxide on the surface of the copper foil has the advantages of simple manufacturing method and high repeatability of the performance of the device.
Drawings
FIG. 1 is a schematic view of the structure obtained by the present invention.
Detailed Description
The first embodiment is as follows:
preparation method of photoelectric detector based on zinc oxide-cuprous phosphide
Step (1), sodium hypophosphite is put into a corundum boat, and then a copper foil with the thickness of 250 micrometers and the surface of 1 square centimeter is covered on the corundum boat;
step (2), putting the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon at 1 atmosphere, and then sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 280 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; keeping the temperature for 30min after the temperature is raised to 280 ℃; then naturally cooling to room temperature, vacuumizing the corundum tube to remove residual gas in the corundum tube, and taking out the copper foil with cuprous phosphide growing on the surface of the product;
step (4), taking the product obtained in the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.1Pa, the oxygen flow is 1sccm, the argon flow is 20sccm, the sputtering voltage is 300V, the current is 30mA, the sputtering time is 20min, and the target material is an aluminum-doped metal zinc target; the thickness of the prepared zinc oxide film is 50 nm;
step (5), depositing an aluminum electrode on the surface of the n-type zinc oxide film on the surface of the zinc oxide film obtained in the step (4) by a thermal evaporation method; vacuum degree of thermal evaporation equipment is 5X 10-4Pa, deposition speed 20 nm/min. As shown in fig. 1, it is a schematic structural diagram of the present invention.
Example two:
preparation method of photoelectric detector based on zinc oxide-cuprous phosphide
Step (1), sodium hypophosphite is put into a corundum boat, and then a copper foil with the thickness of 500 microns and the surface of 3 square centimeters is covered on the corundum boat;
step (2), putting the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon at 1 atmosphere, and then sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 290 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; keeping the temperature after the temperature is increased to 290 ℃, wherein the heat preservation time is 40 min; then naturally cooling to room temperature, vacuumizing the corundum tube to remove residual gas in the corundum tube, and taking out the copper foil with cuprous phosphide growing on the surface of the product;
step (4), taking the product obtained in the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.6Pa, the oxygen flow is 3sccm, the argon flow is 40sccm, the sputtering voltage is 400V, the current is 40mA, the sputtering time is 30min, and the target material is an aluminum-doped metal zinc target; the thickness of the prepared zinc oxide film is 120 nm;
step (5), depositing a gold electrode on the surface of the n-type zinc oxide film on the surface of the zinc oxide film obtained in the step (4) by a thermal evaporation method; vacuum degree of thermal evaporation equipment is 5X 10-4Pa, deposition speed 20 nm/min.
Example three:
preparation method of photoelectric detector based on zinc oxide-cuprous phosphide
Step (1), sodium hypophosphite is put into a corundum boat, and then copper foil with the thickness of 1000 microns and the thickness of 5 square centimeters is covered on the surface of the corundum boat;
step (2), putting the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon at 1 atmosphere, and then sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 300 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; keeping the temperature for 60min after the temperature is raised to 300 ℃; then naturally cooling to room temperature, vacuumizing the corundum tube to remove residual gas in the corundum tube, and taking out the copper foil with cuprous phosphide growing on the surface of the product;
step (4), taking the product obtained in the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 1.0Pa, the oxygen flow is 5sccm, the argon flow is 50sccm, the sputtering voltage is 450V, the current is 60mA, the sputtering time is 40min, and the target material is an aluminum-doped metal zinc target; the thickness of the prepared zinc oxide film is 200 nm;
step (5), depositing a silver electrode on the surface of the n-type zinc oxide film on the surface of the zinc oxide film obtained in the step (4) by a thermal evaporation method; vacuum degree of thermal evaporation equipment is 5X 10-4Pa, deposition speed 20 nm/min.
Claims (5)
1. A preparation method based on a zinc oxide-cuprous phosphide photoelectric detector is characterized by comprising the following steps: the method specifically comprises the following steps:
step (1), sodium hypophosphite is placed into a corundum boat, and then copper foil with the thickness of 250-;
step (2), putting the corundum boat in the step (1) into a corundum tube, vacuumizing, filling argon at 1 atmosphere, and then sealing two ends of the corundum tube;
step (3), heating the corundum tube in the step (2) to 280-300 ℃ through a tube furnace, wherein the heating rate is 10 ℃/min; keeping the temperature after the temperature is increased to 280-300 ℃, wherein the heat preservation time is 30-60 min; then naturally cooling to room temperature, vacuumizing the corundum tube to remove residual gas in the corundum tube, and taking out the copper foil with cuprous phosphide growing on the surface of the product;
step (4), taking the product obtained in the step (3) as a substrate, and depositing an aluminum-doped zinc oxide film by a magnetron sputtering method; the vacuum degree of the magnetron sputtering equipment is 0.1-1.0Pa, the oxygen flow is 1-5sccm, the argon flow is 20-50sccm, the sputtering voltage is 300-; the thickness of the prepared zinc oxide film is 50-200 nm;
step (5), depositing an aluminum electrode on the surface of the n-type zinc oxide film on the surface of the zinc oxide film obtained in the step (4) by a thermal evaporation method; vacuum degree of thermal evaporation equipment is 5X 10-4Pa, deposition speed 20 nm/min.
2. The method of claim 1, wherein the method comprises the steps of: the thickness of the copper foil is 600 microns.
3. The method of claim 1, wherein the method comprises the steps of: the corundum tube is heated to 280 ℃ through a tube furnace.
4. The method of claim 1, wherein the method comprises the steps of: the aluminum electrode is also replaced by a silver electrode or a gold electrode.
5. The method of claim 1, wherein the method comprises the steps of: the aluminum doping amount in the aluminum-doped metallic zinc target material is 3%.
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| CN202111617503.XA CN114284384B (en) | 2021-12-27 | 2021-12-27 | Preparation method based on zinc oxide-cuprous phosphide photoelectric detector |
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| CN202111617503.XA CN114284384B (en) | 2021-12-27 | 2021-12-27 | Preparation method based on zinc oxide-cuprous phosphide photoelectric detector |
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| CN114284384B CN114284384B (en) | 2024-01-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10150212A (en) * | 1996-11-20 | 1998-06-02 | Matsushita Electric Ind Co Ltd | Precursor for semiconductor thin film formation use and manufacture of semiconductor thin film |
| CN107851717A (en) * | 2015-06-10 | 2018-03-27 | 太阳涂料有限公司 | Photovoltaic devices and part |
| CN113322393A (en) * | 2021-05-28 | 2021-08-31 | 杭州电子科技大学 | Preparation method of copper-cuprous phosphide eutectic mixture |
| CN113388392A (en) * | 2021-05-28 | 2021-09-14 | 杭州电子科技大学 | Preparation method of fluorescent material |
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2021
- 2021-12-27 CN CN202111617503.XA patent/CN114284384B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10150212A (en) * | 1996-11-20 | 1998-06-02 | Matsushita Electric Ind Co Ltd | Precursor for semiconductor thin film formation use and manufacture of semiconductor thin film |
| CN107851717A (en) * | 2015-06-10 | 2018-03-27 | 太阳涂料有限公司 | Photovoltaic devices and part |
| CN113322393A (en) * | 2021-05-28 | 2021-08-31 | 杭州电子科技大学 | Preparation method of copper-cuprous phosphide eutectic mixture |
| CN113388392A (en) * | 2021-05-28 | 2021-09-14 | 杭州电子科技大学 | Preparation method of fluorescent material |
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