CN104835853A - NiO: Al/ZnO heterogeneous pn-junction diode - Google Patents
NiO: Al/ZnO heterogeneous pn-junction diode Download PDFInfo
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- CN104835853A CN104835853A CN201510176097.6A CN201510176097A CN104835853A CN 104835853 A CN104835853 A CN 104835853A CN 201510176097 A CN201510176097 A CN 201510176097A CN 104835853 A CN104835853 A CN 104835853A
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Abstract
The invention discloses a NiO: Al/ZnO heterogeneous pn-junction diode at least comprising a pn junction and an ohmic contact electrode. The pn junction grows a p-type NiO: Al film and an n-type ZnO film on a Si substrate to form a heterogeneous pn-junction. The NiO: Al/ZnO heterogeneous pn-junction diode is prepared on the Si substrate by means of magnetron sputtering technology and then the electrode is produced on the pn-junction by means of a magnetron sputtering or thermal evaporation method. The heterogeneous pn-junction diode in the invention has high reverse breakdown voltage and high forward current density and is simple in preparation method.
Description
Technical field
The present invention relates to a kind of NiO:Al/ZnO diode of heterogenous pn junction.Belong to functional material and field of optoelectronic devices.
Background technology
The internal degree of freedom of d (f) electronics contained in strong associated material NiO is as the interaction between spin, electric charge, track, make NiO show much unusual character, also make the physical property of material as the change of temperature, pressure, doping, remarkable change occur along with inner parameter simultaneously.By the end of at present, NiO is because of its good catalytic performance, thermo-sensitive property and be applied to the research in the fields such as catalyst, battery electrode, electrochemical capacitor, to the rare report of the research of its photoelectric characteristic.Heterojunction semiconductor is easy to realize photogenerated charge and is separated the Study and Development being widely used in the opto-electronic devices such as hull cell.NiO is except above-mentioned character, or the direct broad-band gap semitransparent semiconductor material of p-type, and compared with indirect bandgap material, quantum efficiency is relatively high.Under room temperature, energy gap is the d-d track transition of 3.0-4.0eV, 3d electronic structure, makes it there is comparatively weak absorbing in visible region.We are by NiO base heterojunction form research photoelectron device.The people such as P.Puspharajha adopt spray pyrolysis by mixing Li to NiO
+niO film is made to reach 90% at visible light wave range light transmittance, film resistor drops to 1 Ω cm (see document P PUSPHARAJAH, S RADHAKRISHNA, A K AROF. Transparent conducting lithium-doped nickel oxide thin films by spray pyrolysis technique. Journal of Materials Science, 1997,32 (11): 3001-3006).But take a long view, Al metal is more common, and price is more cheap.Al element is introduced NiO by us, preparation NiO:Al base pn junction diode.Simultaneously, the other end that we select cheap N-shaped ZnO to tie as pn, thus realize NiO:Al/ZnO diode of heterogenous pn junction.As everyone knows, ZnO integrates several functions, and is widely used in a lot of field.This selection for the exploitation important in inhibiting of new device, and have not been reported for NiO:Al/ZnO heterojunction at present.
Summary of the invention
For improving the performance of traditional plane pn junction diode, the invention provides a kind of NiO:Al/ZnO diode of heterogenous pn junction, the NiO:Al/ZnO diode of heterogenous pn junction of preparation has higher reverse breakdown voltage and large forward current density.Relative to traditional plane pn junction diode, the rectification characteristic of this Novel diode is improved.Technical scheme of the present invention: NiO:Al/ZnO diode of heterogenous pn junction, at least comprises pn knot and Ohm contact electrode, and described pn knot forms heterogenous pn junction by p-type NiO:Al and N-shaped ZnO.
The preparation method of above-mentioned NiO:Al/ZnO diode of heterogenous pn junction: prepare NiO:Al film and ZnO film formation heterogenous pn junction on a si substrate with magnetron sputtering technique; Sputtering or thermal evaporation is finally adopted to tie making electrode at pn; Wherein, NiO:Al and ZnO surface sputtering or evaporation silver, nickel or aluminium or gold electrode.The present invention adopts diameter to be the NiO:Al of 50mm
2o
3ceramic target, NiO:Al film prepared by magnetron sputtering.Cavity background vacuum before sputtering is better than 3x10
-4pa, at the relative partial pressure of oxygen O that this adopts
2/ (O
2+ Ar)=0%-100%.Sputtering pressure is 0.5-2Pa, sputtering power 100-200W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 20-120min, and underlayer temperature is RT-600
oc or post annealed temperature are from 200
oc to 700
othe C time is 0.5 to 1 hour.
The present invention adopts diameter to be the ZnO ceramic target of 50mm, ZnO film prepared by magnetron sputtering.Cavity background vacuum before sputtering is better than 3x10
-4pa, at the relative partial pressure of oxygen O that this adopts
2/ (O
2+ Ar)=0%-100%.Sputtering pressure is 0.5-2Pa, sputtering power 50-150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 20-120min, and underlayer temperature is RT-600
oc or post annealed temperature are from 200
oc to 700
othe C time is 0.5 to 1 hour.
The present invention utilizes p-type NiO:Al film and N-shaped ZnO film to define diode of heterogenous pn junction.By the control of condition, the optimization etc. of pn junction structure such as to prepare to NiO:Al film and ZnO film, improve heterogenous pn junction performance, give full play to the original advantage of semiconductor N iO:Al in heterogenous pn junction application aspect.
Accompanying drawing explanation
Fig. 1 is NiO:Al/ZnO heterogenous pn junction structure figure of the present invention
Fig. 2 is the I-V curve (embodiment one) that the present invention reflects heterojunction rectification characteristic
Fig. 3 is the I-V curve (embodiment two) that the present invention reflects heterojunction rectification characteristic
Fig. 4 is the I-V curve (embodiment three) that the present invention reflects heterojunction rectification characteristic
Embodiment
NiO:Al/ZnO diode of heterogenous pn junction of the present invention, at least comprises pn knot and Ohm contact electrode, and described pn knot forms heterogenous pn junction at N-shaped Si deposited on substrates NiO:Al/ZnO, sees Fig. 1.Its concrete preparation process is as follows: (1) adopts the cleaning method cleaning silicon chip in semiconductor technology and dries up with nitrogen; (2) preparation of p-NiO:Al: the cavity background vacuum before sputtering is better than 3x10
-4pa, the relative partial pressure of oxygen O of employing
2/ (O
2+ Ar)=0%-100%, sputtering pressure is 0.5-2Pa, sputtering power 100-200W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 20-120min, and underlayer temperature is RT-600
oc and temperature are 200
oc to 700
oc annealing 0.5 to 1 hour.
(3) preparation of n-ZnO: the cavity background vacuum before sputtering is better than 3x10
-4pa, the relative partial pressure of oxygen O of employing
2/ (O
2+ Ar)=0%-100%, sputtering pressure is 0.5-2Pa, sputtering power 50-150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 20-120min, and underlayer temperature is RT-600
oc and temperature are 200
oc to 700
oc annealing 0.5 to 1 hour.
(4) preparation of electrode: adopt thermal evaporation method to make Al electrode at NiO:Al and ZnO marginal surface.
(5) ohmic contact characteristic of test with Keithley 2612A detecting electrode and the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction.
embodiment one
(1) adopt the cleaning method cleaning silicon chip in semiconductor technology and dry up with nitrogen; (2) preparation of p-NiO:Al: adopt diameter to be the NiO:Al of 50mm
2o
3ceramic target.NiO:Al film prepared by magnetron sputtering.Cavity background vacuum before sputtering is better than 3x10
-4pa, the pure argon sputtering of employing.Sputtering pressure is 2Pa, sputtering power 150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is 300
oc.
(3) preparation of n-ZnO: employing diameter is the ZnO ceramic target of 50mm.Cavity background vacuum before sputtering is better than 3x10
-4pa, the relative partial pressure of oxygen O of employing
2/ (O
2+ Ar)=0%, sputtering pressure is 0.5 Pa, sputtering power 75W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is RT.Fig. 1 is shown in by the structure chart of NiO:Al/ZnO heterogenous pn junction, as seen mainly NiO and ZnO diffraction maximum and Al electrode and substrate diffraction peak, do not have other diffraction peak of mixing to occur.
(4) preparation of electrode: adopt thermal evaporation method to make Al electrode at NiO:Al and ZnO marginal surface.
(5) ohmic contact characteristic of test with Keithley 2612A detecting electrode and the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction, be shown in Fig. 2.
embodiment two
(1) adopt the cleaning method cleaning silicon chip in semiconductor technology and dry up with nitrogen; (2) preparation of p-NiO:Al: employing diameter is the NiO:Al ceramic target of 50mm.NiO:Al film prepared by magnetron sputtering.Cavity background vacuum before sputtering is better than 3x10
-4pa, adopts O
2/ (O
2+ Ar) ratio is sputter under 30% atmosphere.Sputtering pressure is 2Pa, sputtering power 150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is 300
oc.The preparation of n-ZnO: employing diameter is the ZnO ceramic target of 50mm.Cavity background vacuum before sputtering is better than 3x10
-4pa, the relative partial pressure of oxygen O of employing
2/ (O
2+ Ar)=0%, sputtering pressure is 0.5 Pa, sputtering power 75W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is RT.
(3) preparation of electrode: adopt thermal evaporation method to make Al electrode at NiO:Al and ZnO marginal surface.
(4) ohmic contact characteristic of test with Keithley 2612A detecting electrode and the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction, be shown in Fig. 3.
embodiment three
(1) adopt the cleaning method cleaning silicon chip in semiconductor technology and dry up with nitrogen;
(2) preparation of p-NiO:Al: employing diameter is the NiO:Al ceramic target of 50mm.NiO:Al film prepared by magnetron sputtering.Cavity background vacuum before sputtering is better than 3x10
-4pa, adopts O
2/ (O
2+ Ar) ratio is sputter under 80% atmosphere.Sputtering pressure is 2Pa, sputtering power 150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is 300
oc.The preparation of n-ZnO: employing diameter is the ZnO ceramic target of 50mm.Cavity background vacuum before sputtering is better than 3x10
-4pa, the relative partial pressure of oxygen O of employing
2/ (O
2+ Ar)=0%, sputtering pressure is 0.5 Pa, sputtering power 75W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is RT.
(3) preparation of electrode: adopt thermal evaporation method to make Al electrode at NiO:Al and ZnO marginal surface.
(4) ohmic contact characteristic of test with Keithley 2612A detecting electrode and the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction, be shown in Fig. 4.
Claims (9)
1. a NiO:Al/ZnO diode of heterogenous pn junction, at least comprises pn knot and Ohm contact electrode, it is characterized in that: described pn knot is the heterogenous pn junction obtained by p-type NiO:Al film and N-shaped ZnO film.
2. the preparation method of NiO:Al/ZnO diode of heterogenous pn junction described in claim 1, is characterized in that: prepare NiO:Al film and ZnO film formation heterogenous pn junction on a si substrate with magnetron sputtering technique.
3. preparation method according to claim 2, is characterized in that: the present invention adopts NiO:Al
2o
3ceramic target, magnetron sputtering technique prepares NiO:Al film, adopts partial pressure of oxygen O at this
2/ (O
2+ Ar)=0%-100%.
4. the cavity background vacuum before sputtering is better than 3x10
-4pa, sputtering pressure is 0.5-2Pa, and sputtering power is 100-200W.
5. the plated film time is 20-120min, and underlayer temperature is changed to 600 from RT
oc.
6. preparation method according to claim 2, is characterized in that: the present invention adopts ZnO ceramic target, magnetron sputtering technique making ZnO film, adopts partial pressure of oxygen O at this
2/ (O
2+ Ar)=0%-100%.
7. the cavity background vacuum before sputtering is better than 3x10
-4pa, sputtering pressure is 0.5-2Pa, and sputtering power is 50-150W.
8. the plated film time is 20-120min, and underlayer temperature is changed to 600 from RT
oc.
9. the preparation method of NiO:Al/ZnO diode of heterogenous pn junction described in claim 1 or 2 or 3 or 6, is characterized in that: adopt sputtering method or thermal evaporation to tie making electrode at pn; Wherein, NiO:Al and ZnO surface deposition silver, nickel, aluminium or gold electrode.
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| CN201510176097.6A CN104835853A (en) | 2015-04-15 | 2015-04-15 | NiO: Al/ZnO heterogeneous pn-junction diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301026A (en) * | 2018-09-18 | 2019-02-01 | 浙江师范大学 | N doping nickel oxide-zinc oxide black light detector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110492A (en) * | 2009-12-23 | 2011-06-29 | 复旦大学 | Conductive transparent copper-doped nickel oxide film and preparation method thereof |
-
2015
- 2015-04-15 CN CN201510176097.6A patent/CN104835853A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110492A (en) * | 2009-12-23 | 2011-06-29 | 复旦大学 | Conductive transparent copper-doped nickel oxide film and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| S NANDY .ETC: "Enhanced p-type conductivity and band gap narrowing in heavily Al doped NiO thin films deposited by RF magnetron sputtering", 《JOURNAL OF PHYSICS:CONDENSED MATTER》 * |
| 杨治国: "NiO/ZnO基半导体异质结及MgNiO固溶体薄膜的制备与性能研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301026A (en) * | 2018-09-18 | 2019-02-01 | 浙江师范大学 | N doping nickel oxide-zinc oxide black light detector |
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