CN115900966A - Thermosensitive film, infrared detector and preparation method of infrared detector - Google Patents
Thermosensitive film, infrared detector and preparation method of infrared detector Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the technical field of thermosensitive materials and infrared detection, and discloses a thermosensitive thin film, an infrared detector and a preparation method of the infrared detector, wherein the thermosensitive thin film comprises SnSe x A particle, wherein x = 1-2. The Temperature Coefficient of Resistance (TCR) of the thermosensitive film provided by the invention is up to 9.1%/K, which is higher than that of the traditional vanadium oxide and amorphous silicon thermosensitive film, and the signal response intensity of a device containing the thermosensitive film can be improved, and the performance of the device can be improved.
Description
Technical Field
The invention relates to the technical field of thermosensitive materials and infrared detection, in particular to a thermosensitive film, an infrared detector and a preparation method of the infrared detector.
Background
The non-refrigeration infrared detector mainly comprises a glass tube, a thermopile, a pyroelectric detector and a microbolometer (also called a thermistor detector), wherein when the infrared absorption capacity of a thermosensitive material of the thermistor detector is weaker, an infrared absorption layer needs to be prepared on a thermosensitive layer, and the working principle of the non-refrigeration infrared detector is that the infrared absorption layer heats the non-refrigeration infrared detector after absorbing infrared rays, then the non-refrigeration infrared detector conducts heat to the thermosensitive layer, further heats the thermosensitive layer to enable the thermosensitive layer to generate resistance change, and reads out the resistance change value through a circuit, namely an infrared radiation signal. Therefore, the performance (resistance temperature coefficient) of the thermosensitive layer has a great influence on the performance of the infrared detector, but the thermosensitive layer material of the existing non-refrigeration type infrared detector mainly adopts vanadium oxide or polysilicon and the like, the resistance temperature coefficient is still lower, and how to further improve the resistance temperature coefficient of the thermosensitive layer has important significance on improving the performances of the infrared detector such as signal response strength and the like.
Accordingly, there is a need for improvements and developments in the art.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a thermosensitive film, an infrared detector and a preparation method of the infrared detector, and aims to solve the problem that the temperature coefficient of resistance of a thermosensitive layer material of the existing infrared detector is low.
The technical scheme of the invention is as follows:
in a first aspect of the invention, a heat-sensitive thin film is provided, wherein the heat-sensitive thin film comprises SnSe x A particle, wherein x = 1-2.
Optionally, the thickness of the thermosensitive film is 0.1 to 5 μ M, and the resistance of the thermosensitive film is 500 Ω to 5M Ω.
In a second aspect of the present invention, there is provided an infrared detector, wherein the infrared detector comprises: the heat-sensitive film comprises a substrate, an electrode, a heat-sensitive layer and an infrared absorption layer which are sequentially stacked, wherein the heat-sensitive layer is the heat-sensitive film.
Optionally, the infrared absorption layer is made of at least one of a nano-sheet infrared absorption material, a nano-linear infrared absorption material, a nano-tubular infrared absorption material and a nano-columnar infrared absorption material; the two-dimensional plane direction of the nano flaky infrared absorption material is perpendicular to the thermosensitive layer, and the axial directions of the nano linear infrared absorption material, the nano tubular infrared absorption material and the nano columnar infrared absorption material are perpendicular to the thermosensitive layer.
Optionally, the infrared absorption layer has a thickness of 0.2 to 10 μm;
and/or the thickness of the nano flaky infrared absorption material is 25-60 nm in the direction vertical to the two-dimensional plane of the nano flaky infrared absorption material.
Optionally, the nano-platelet infrared absorbing material is selected from SnSe y At least one of a nanosheet, a cuprous sulfide nanosheet, and a cuprous selenide nanosheet, wherein y =1 to 4.
In a third aspect of the present invention, there is provided a method for manufacturing the infrared detector, wherein the method comprises the steps of:
providing a substrate;
forming an electrode on the substrate;
forming a thermosensitive layer on the electrode; the thermosensitive layer is the thermosensitive film, and the thermosensitive film comprises SnSe x A particle, wherein x = 1-2;
an infrared absorbing layer is formed on the heat sensitive layer.
Optionally, forming a thermosensitive layer on the electrode by an epitaxial growth method; an infrared absorption layer is formed on the thermosensitive layer by an epitaxial growth method.
Optionally, a thermosensitive layer is formed on the electrode by a molecular beam epitaxial growth method, wherein the adopted process parameters are as follows: the heating temperature of the substrate is 150-210 ℃, the heating temperature of the Sn source is 900-1900 ℃, the heating temperature of the Se source is 220-210 ℃, and the reaction time is 1-100 min.
Optionally, an infrared absorption layer is formed on the thermosensitive layer by molecular beam epitaxy, wherein, when the infrared absorption layer adopts SnSe y When the nano-sheet is prepared, the adopted technological parameters are as follows: the heating temperature of the substrate is 150-210 ℃, and the heating of the Sn sourceThe temperature is 900-1900 ℃, the heating temperature of the Se source is 220-210 ℃, and the reaction time is 1-100 min.
Has the advantages that: the Temperature Coefficient of Resistance (TCR) of the thermosensitive film provided by the invention is up to 9.1%/K, which is higher than that of the traditional vanadium oxide and amorphous silicon thermosensitive film, and the signal response intensity of a device containing the thermosensitive film can be improved, and the performance of the device can be improved.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of an infrared detector in an embodiment of the invention.
Fig. 2 is a schematic flow chart of a process for manufacturing an infrared detector according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a process for manufacturing an infrared detector according to another embodiment of the present invention.
FIG. 4 shows the preparation of SnSe on the surface of a silicon substrate in example 1 of the present invention y The structural schematic diagram of the nanosheet infrared absorbing layer.
FIG. 5 shows SnSe prepared in example 1 of the present invention y Infrared absorption spectrum of nanosheet infrared absorbing layer (where y = 1.10).
FIG. 6 is SnSe prepared in example 1 of the present invention y SEM images of nanosheet infrared absorbing layers (where y = 1.10), where (a) is a surface SEM image and (b) is a cross-sectional SEM image.
FIG. 7 shows SnSe with different y values prepared in example 1 of the present invention y And (3) an infrared absorption spectrogram of the nanosheet infrared absorption layer, wherein y is 1.11, 1.959, 2.11 and 2.75 respectively.
Fig. 8 is a schematic structural view of the interdigitated electrode in embodiment 2 of the present invention.
FIG. 9 shows SnSe prepared in example 2 of the present invention x SEM images of thermosensitive layers (where x = 1.9), in which (a) is a surface SEM image and (b) is a cross-sectional SEM image.
Fig. 10 is a signal response diagram of the infrared detector prepared in embodiment 2 of the present invention under 2W infrared light irradiation.
Detailed Description
The invention provides a thermosensitive film, an infrared detector and a preparation method of the infrared detector, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The embodiment of the invention provides a thermosensitive thin film, wherein the thermosensitive thin film comprises SnSe x A particle, wherein x = 1-2. The Temperature Coefficient of Resistance (TCR) of the thermosensitive film provided by the invention is up to 9.1%/K, which is higher than that of the traditional vanadium oxide and amorphous silicon thermosensitive film (the average value is 2.5%/K), so that the signal response intensity of a device comprising the thermosensitive film can be improved, and the performance of the device can be improved.
In this embodiment, the Temperature Coefficient of Resistance (TCR) of the thermosensitive thin film is as high as 9.1%/K, and the value x is 1.9, which corresponds to more defects in the thermosensitive thin film, resulting in a higher concentration of carriers generated by heating, and a higher temperature coefficient of resistance, and as the value x is further increased, i.e., the Se/Sn atomic number ratio is further increased, the concentration of carriers in the thermosensitive thin film is decreased, and the temperature coefficient of resistance is decreased.
In one embodiment, the thermally sensitive thin film is made of SnSe x A particle composition, wherein x =1 to 2. The heat-sensitive film is made of dense SnSe x Particles, which may be spherical particles, rod-shaped particles, etc.
In one embodiment, the thickness of the thermosensitive film is 0.1-5 μm, and the thermosensitive film in the thickness range can improve the self resistance change speed, thereby improving the response speed of the device. By way of example, the thickness of the thermosensitive film may be 0.1 μm, 0.2 μm, 0.5 μm, 1 μm, 2 μm, 9 μm, 4 μm, 5 μm, or the like.
In one embodiment, the resistance of the thermosensitive thin film is 500 Ω to 5M Ω.
The embodiment of the present invention further provides a method for preparing the thermosensitive film described above, including the steps of:
forming a thermosensitive film by a molecular beam epitaxial growth method, wherein the adopted process parameters are as follows: the heating temperature of the substrate is 150-210 ℃, the heating temperature of the Sn source is 900-1900 ℃, the heating temperature of the Se source is 220-210 ℃, and the reaction time is 1-100 min. In this embodiment, a molecular beam epitaxial growth method can be used to prepare a heat-sensitive film on any substrate surface on which a heat-sensitive film is to be prepared.
An embodiment of the present invention further provides an infrared detector, where as shown in fig. 1, the infrared detector includes: the substrate 1, the electrode 2, the heat-sensitive layer 9 and the infrared absorption layer 4 are sequentially stacked, and the heat-sensitive layer 9 is the heat-sensitive film of the embodiment of the invention.
In the embodiment of the invention, the Temperature Coefficient of Resistance (TCR) of the thermosensitive layer is as high as 9.1%/K and is higher than that of the traditional vanadium oxide and amorphous silicon thermosensitive layer, so that the signal response intensity of the infrared detector can be improved, and the performance of the infrared detector can be improved.
In this embodiment, the thermosensitive layer is the thermosensitive thin film described above in the embodiments of the present invention, that is, the thermosensitive layer is made of dense SnSe x A particle composition, wherein x =1 to 2.
Furthermore, the thickness of the thermosensitive layer is 0.1-5 μm, and the thermosensitive layer within the thickness range can improve the resistance change speed of the thermosensitive layer and can further improve the response speed of the infrared detector. By way of example, the thickness of the thermosensitive layer may be 0.1 μm, 0.2 μm, 0.5 μm, 1 μm, 2 μm, 9 μm, 4 μm, 5 μm, or the like.
In one embodiment, the infrared absorption layer is at least one of nano-sheet infrared absorption material, nano-wire infrared absorption material, nano-tube infrared absorption material and nano-column infrared absorption material; the two-dimensional plane direction of the nano flaky infrared absorption material is perpendicular to the thermosensitive layer, and the axial directions of the nano linear infrared absorption material, the nano tubular infrared absorption material and the nano columnar infrared absorption material are perpendicular to the thermosensitive layer.
In the embodiment, the infrared absorption layer formed by a plurality of nano flaky infrared absorption materials with two-dimensional plane directions perpendicular to the thermosensitive layer has a physical light trapping structure, and the extinction effect can be realized through gaps among sheets.
In one embodiment, the thickness of the infrared absorption layer is 0.2 to 10 μm, which ensures that the infrared absorption layer has a good infrared absorption capability.
In one embodiment, the nanoplatelet infrared absorbing material has a thickness of 25 to 60nm in a direction perpendicular to the two-dimensional plane of the nanoplatelet infrared absorbing material. For example, it may be 25nm, 90nm, 95nm, 40nm, 45nm, 50nm, 55nm, or 60nm.
In one embodiment, the nanosheet infrared absorbing material is selected from the group consisting of SnSe y At least one of a nanosheet, a cuprous sulfide nanosheet, and a cuprous selenide nanosheet, wherein y =1 to 4.
In this embodiment, the nano-platelet infrared absorbing material is selected from SnSe y When the nano-sheet is used, the absorption of infrared light with a wave band of 2-25 mu m can be realized, and the sensitivity of the infrared detector is greatly improved. Meanwhile, the light-absorbing sheet has a physical light-trapping structure, and the extinction effect can be realized through gaps among the sheets. In addition, the regulation and control of the infrared absorption wave band can be realized by regulating and controlling the value of y, namely regulating and controlling the atomic number ratio of Se/Sn, and particularly, the SnSe can be reduced along with the reduction of y y The Sn content in the nanosheet is increased, the metallization is enhanced, the resistance is reduced, and the infrared absorption capability is enhanced.
Further, snSe in the infrared absorption layer perpendicular to the thermosensitive layer y Nanosheet and SnSe y The nano sheets can be contacted with each other to form a certain angle, so that gaps among the sheets are formed. The SnSe y The thickness of the nano sheet is 25-60 nm, and the SnSe is y The height of the nano sheet in the direction vertical to the thermosensitive layer is 0.2-10 mu m, so that SnSe is formed y The nano-sheet has stronger infrared absorption capability.
In order to better realize SnSe vertical to the thermosensitive layer y The light trapping structure of the nano-sheet has the advantages ofIn one embodiment, the infrared detector may further include a reflective layer disposed between the substrate and the electrode. Further, the infrared detector further includes an insulating film disposed between the reflective layer and the electrode.
In this embodiment, the reflective layer may be formed by evaporation including, but not limited to, gold, silver, titanium, and the like.
The traditional non-refrigeration infrared detector mainly depends on vanadium oxide or polycrystalline silicon materials as a heat-sensitive layer, but the infrared absorption capability of the materials is weak, so that an infrared absorption layer needs to be prepared or a resonant cavity structure needs to be utilized for infrared absorption. The infrared absorption layer works on the principle that heat is conducted to the thermosensitive layer after the infrared absorption layer heats the infrared absorption layer, and therefore the thermosensitive layer is heated to generate resistance change. At present, the infrared absorption layer is mostly of a multilayer structure, and an insulating layer needs to be prepared on the thermosensitive layer to prevent short circuit of the circuit. The thermal conductivity of the additionally prepared insulating layer seriously affects the sensitivity and response time of the detector, and needs a multi-step process to be realized, thereby increasing the production cost. The resonant cavity structure has the problems of narrow infrared absorption wave band, complex preparation process and the like, the former can reduce the detection sensitivity of the detector, and the latter can often generate huge product cost. Accordingly, an embodiment of the present invention further provides a method for manufacturing an infrared detector, where as shown in fig. 2, the method includes the steps of:
s1, providing a substrate;
s2, forming an electrode on the substrate;
s9, forming a thermosensitive layer on the electrode; the thermosensitive layer is the thermosensitive film, and the thermosensitive film comprises SnSe x A particle, wherein x = 1-2;
and S4, forming an infrared absorption layer on the thermosensitive layer.
The preparation method provided by the embodiment of the invention is simple, has lower cost, and can prepare the non-refrigeration infrared detector with high response speed and sensitivity. Specifically, the infrared absorption layer is directly prepared on the thermosensitive layer, so that the preparation difficulty is greatly reduced, and meanwhile, due to the structure that the infrared absorption layer is directly contacted with the thermosensitive layer, all heat generated by the infrared absorption layer absorbing infrared light can be conducted to the thermosensitive layer, so that the heat loss is reduced, the time required by heating the insulating layer in the prior art is saved, and the response speed and the sensitivity of the detector are further improved. Furthermore, the temperature coefficient of resistance of the thermosensitive layer is higher, and the signal response intensity of the infrared detector can be further improved.
In step S1, in an embodiment, the substrate is a rigid substrate or a flexible substrate, wherein the rigid substrate includes but is not limited to a silicon substrate, and the flexible substrate includes but is not limited to a polyimide substrate. In this embodiment, a rigid substrate or a flexible substrate may be selected according to different application scenarios of the infrared detector.
In step S2, the electrodes include a first electrode and a second electrode that are oppositely disposed. In one embodiment, the first and second electrodes of the interdigitated structure are formed on the substrate by an electron beam evaporation method, and the finger portions of the first and second electrodes of the interdigitated structure cross each other. The material of the electrode is selected from at least one of chromium, gold, titanium, aluminum and nickel, but is not limited thereto. The electrode may be composed of metal layers stacked one on another, for example, a chromium layer and a gold layer stacked one on another, a titanium layer and a gold layer stacked one on another, or a nickel layer, an aluminum layer, and a nickel layer stacked one on another.
In steps S9-S4, in one embodiment, a thermosensitive layer is formed on the electrode by an epitaxial growth method, and an infrared absorption layer is formed on the thermosensitive layer by an epitaxial growth method.
In a further embodiment, the thermosensitive layer is formed on the electrode by molecular beam epitaxy, wherein the process parameters used are: the heating temperature of the substrate is 150 to 210 ℃ (e.g., 150 ℃, 160 ℃, 170 ℃, 110 ℃, 200 ℃, 220 ℃, 240 ℃, 260 ℃, or 210 ℃), the heating temperature of the Sn source is 900 to 1900 ℃ (e.g., 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃, or 1900 ℃), the heating temperature of the Se source is 220 to 210 ℃ (e.g., 220 ℃, 290 ℃, 240 ℃, 250 ℃, 260 ℃; or,270 ℃ or 210 ℃ and the like), and the reaction time is 1 to 100min (for example, 1min, 5min, 10min, 20min, 90min, 40min, 50min, 60min, 70min, 10min, 90min, or 100min and the like); forming an infrared absorption layer on the thermosensitive layer by molecular beam epitaxial growth, wherein the infrared absorption layer is SnSe y When the nano-sheet is prepared, the adopted technological parameters are as follows: the heating temperature of the substrate is 150 to 210 ℃ (e.g., 150 ℃, 160 ℃, 170 ℃, 110 ℃, 200 ℃, 220 ℃, 240 ℃, 260 ℃, or 210 ℃, etc.), the heating temperature of the Sn source is 900 to 1900 ℃ (e.g., 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃, or 1900 ℃, etc.), the heating temperature of the Se source is 220 to 210 ℃ (e.g., 220 ℃, 290 ℃, 240 ℃, 250 ℃, 260 ℃, 270 ℃, or 210 ℃, etc.), and the reaction time is 1 to 100min (e.g., 1min, 5min, 10min, 20min, 90min, 40min, 50min, 60min, 70min, 10min, 90min, or 100min, etc.). It is to be understood that, in step S9, when the thermosensitive layer is formed on the electrode by the molecular beam epitaxial growth method, the heating temperature of the substrate, that is, the heating temperature of the substrate and the electrode formed on the surface of the substrate as a whole, that is, the substrate when the thermosensitive layer is formed on the electrode by the molecular beam epitaxial growth method is the substrate on which the electrode is formed on the surface; in step S4, when the infrared absorption layer is formed on the heat-sensitive layer by the molecular beam epitaxial growth method, the heating temperature of the substrate, that is, the heating temperature of the substrate, the electrodes formed on the substrate, and the heat-sensitive layer as a whole, that is, snSe is grown by the molecular beam epitaxial growth method y The substrate of the nano-sheet is a substrate with an electrode and a thermosensitive layer sequentially formed on the surface.
Existing methods for preparing infrared absorbing materials, e.g. laminating thin-film structures (e.g. by mixing Si with a binder) 9 N 4 Layer, siO 2 Layer, tiO 2 Two or more of the layer, the amorphous silicon layer and the TiN layer are used as a laminated film structure) and the infrared absorption material is prepared by surface micro-nano processing (for example, the surface micro-nano processing is carried out on the infrared absorption material by photoetching and other methods to realize the surface microstructure and the absorption of the infrared wave band), all have the problems that the preparation needs multiple steps in the process, and the engineering is difficultThe method is realized, and the problems of the infrared absorption material prepared by micro-nano processing in the aspects of process and product cost are difficult to solve. In the present embodiment (steps S9 to S4), the same material is used for the molecular beam epitaxy method based on the co-evaporation method to realize the one-step preparation of the thermosensitive layer and the infrared absorption layer (specifically, snSe x The granular film forms a heat-sensitive layer with SnSe y The nanosheets forming an infrared absorbing layer, snSe y The nano-sheet vertically grows in SnSe x Particle film) to obtain an integrated infrared detector, thus replacing the existing multilayer film preparation process and surface micro-nano structure processing process, omitting processes, photoetching processes and the like required by preparing different materials, avoiding complex and high-cost production processes and finally realizing the preparation of low-cost products. Meanwhile, the infrared absorption layer and the thermosensitive layer are in direct contact, so that heat generated by the infrared absorption layer absorbing infrared light can be completely transmitted to the thermosensitive layer, heat loss is reduced, time for heating the insulating layer is saved, and response speed and sensitivity of the detector are further improved.
In addition, compared with the design that the resonant cavity only absorbs infrared light with a certain wavelength in the prior art, in the embodiment, the infrared absorption layer adopts SnSe y The nano-sheet can realize the absorption of infrared light with a wave band of 2-25 mu m, and greatly improves the sensitivity of the infrared detector.
In steps S9 and S4, the thermosensitive layer and the infrared light absorbing layer may be prepared in a molecular beam epitaxy apparatus in which the degree of vacuum of the chamber is controlled to 1X 10 -5 ～9×10 -4 Pa。
In step S4, the heating temperature of the substrate, the heating temperature of the Sn source, the heating temperature of the Se source and the reaction time can be regulated to regulate the temperature including SnSe y Infrared absorption capability of the infrared absorbing layer of the nanosheet.
Specifically, the infrared absorption capacity can be improved by lowering the heating temperature of Se so that the Sn content is increased in the compound; the content of Sn in the compound can be improved by regulating and controlling the opening time of the Sn source and the Se source, namely opening the Sn source for 0.2-5 min and then opening the Se source for reaction, so that the infrared absorption capacity of the compound is improved; and the heating temperature of the substrate can be regulated and controlled, the heating temperature and the heating time of the substrate are reduced, and the Sn content in the compound is increased, so that the infrared absorption capability is improved.
In a specific embodiment of the present invention, as shown in fig. 9, a method for manufacturing an integrated infrared detector is provided, wherein the method comprises the steps of:
s11, providing a substrate;
s21, forming an electrode with an interdigital structure on the substrate by an electron beam evaporation method;
s91, growing SnSe on the electrode by a molecular beam epitaxial growth method x Particles forming a thermosensitive layer, wherein x = 1-2, and the adopted process parameters are as follows: the heating temperature of the substrate is 150-210 ℃, the heating temperature of the Sn source is 900-1900 ℃, the heating temperature of the Se source is 220-210 ℃, and the reaction time is 1-100 min;
s41, growing SnSe on the thermosensitive layer through a molecular beam epitaxial growth method y Nanosheets forming an infrared absorbing layer, the SnSe y The two-dimensional plane direction of the nanosheets is perpendicular to the thermosensitive layer, wherein y = 1-4, and the adopted process parameters are as follows: the heating temperature of the substrate is 150-210 ℃, the heating temperature of the Sn source is 900-1900 ℃, the heating temperature of the Se source is 220-210 ℃, and the reaction time is 1-100 min.
In this embodiment, the same raw material is used for the molecular beam epitaxy method to realize the one-step preparation of the thermosensitive layer and the infrared absorption layer (specifically, snSe y The granular film forming a heat-sensitive layer with SnSe y The nanosheets form infrared absorption layers), so that an integrated infrared detector is obtained, the existing multilayer film preparation process and the surface micro-nano structure processing process are replaced, the processes required for preparing different materials, photoetching processes and the like are omitted, the complex and high-cost production process is avoided, and finally the preparation of low-cost products is realized. Meanwhile, the infrared absorption layer and the thermosensitive layer are in direct contact, so that heat generated by infrared absorption of infrared light by the infrared absorption layer can be completely transmitted to the thermosensitive layer, heat loss is reduced, time for heating the insulating layer is saved, and the infrared detector is further improvedResponse speed and sensitivity.
The following is a detailed description of specific examples.
Example 1
In the molecular beam epitaxy apparatus, snSe of different y values (i.e., different Se/Sn atomic number ratios) perpendicular to the silicon substrate 11 is prepared on the silicon substrate 11 using a molecular beam epitaxy method y The nanosheet infrared absorbing layer 21 has a schematic structural diagram as shown in fig. 4;
(1) Preparation of SnSe having a y value of 1.10 y The nano-sheet infrared absorption layer adopts the following process parameters: the vacuum degree of the chamber needs to be controlled at 9 x 10 -4 Pa, the substrate temperature is 260 ℃, the Sn source temperature is 1140 ℃, the Se source temperature is 160 ℃, after the temperature parameters are correct, the baffle plates of all the sources are opened simultaneously, the reaction time is 90min, and the SnSe is prepared y A nanoplatelet infrared absorbing layer, wherein y =1.10. The infrared absorption spectrum is shown in FIG. 5, which shows that SnSe y The absorption wave band of the nano-sheet infrared absorption layer can cover 2.5-25 μm, the absorption rate of the nano-sheet infrared absorption layer at 2.5-5 μm reaches nearly ninety percent, and the absorption rate at 5-25 μm also reaches more than eighty percent. SnSe y SEM image of nanosheet infrared absorbing layer is shown in FIG. 6, wherein (a) is SnSe y SEM image of the surface of the nano-sheet infrared absorption layer, and (b) is SnSe y SEM image of the cross section of the infrared absorption layer of the nano-sheet.
(2) Preparation of SnSe having a y value of 1.11 y The nano-sheet infrared absorption layer adopts the following process parameters: the vacuum degree of the chamber needs to be controlled at 9 x 10 -4 Pa, the substrate temperature is 205 ℃, the Sn source temperature is 1195 ℃, the Se source temperature is 255.5 ℃, after the temperature parameters are correct, the baffle plates of the sources are opened simultaneously, the reaction time is 90min, and the SnSe is prepared y A nanoplatelet infrared absorbing layer, wherein y =1.11;
(9) Preparation of SnSe having a y value of 1.959 y The nano-sheet infrared absorption layer adopts the following process parameters: the vacuum degree of the chamber needs to be controlled at 9 x 10 -4 Pa, substrate temperature of 205 deg.C, sn source temperature of 1195 deg.C, se source temperature of 257.5 deg.C, opening the baffle of each source when each temperature parameter is correct, and reacting for 90min to obtain the final productTo SnSe y A nanoplatelet infrared absorbing layer wherein y =1.959;
(4) Preparation of SnSe having a y value of 2.11 y The nano-sheet infrared absorption layer adopts the following process parameters: the vacuum degree of the chamber needs to be controlled at 9 x 10 -4 Pa, the substrate temperature is 205 ℃, the Sn source temperature is 1195 ℃, the Se source temperature is 260 ℃, after the temperature parameters are correct, the baffle plates of the sources are opened simultaneously, the reaction time is 90min, and the SnSe is prepared y A nanoplatelet infrared absorbing layer, wherein y =2.11;
(5) Preparation of SnSe having a y value of 2.75 y The nano-sheet infrared absorption layer adopts the following technological parameters: the vacuum degree of the chamber needs to be controlled at 9 x 10 -4 Pa, the substrate temperature is 290 ℃, the Sn source temperature is 1140 ℃, the Se source temperature is 250 ℃, after the temperature parameters are correct, the baffle plates of all the sources are opened simultaneously, the reaction time is 90min, and the SnSe is prepared y A nanoplatelet infrared absorbing layer, wherein y =2.75;
SnSe vertical to the silicon substrate and prepared from (2) to (4) and having y of 1.11, 1.959, 2.11 and 2.75 y The infrared absorption spectrum test of the nanosheet infrared absorption layer is carried out, and the result is shown in fig. 7, which shows that the infrared absorption capability of the nanosheet infrared absorption layer tends to be weakened along with the increase of y.
Example 2
The preparation method of the integrated infrared detector comprises the following steps:
on a polyimide substrate, a Cr layer and an Au layer were sequentially evaporated by an electron beam evaporation method to prepare an interdigital electrode (a schematic structural diagram of the interdigital electrode is shown in fig. 1). The interdigital electrode is composed of a Cr layer and an Au layer which are stacked, the thickness of the Cr layer is 20nm, the thickness of the Au layer is 100nm, and the Cr layer is arranged by being attached to the polyimide substrate;
in a molecular beam epitaxy apparatus, snSe is grown on interdigital electrodes by molecular beam epitaxy x Particles forming a heat sensitive layer (x = 1.9), wherein the process parameters used are: the vacuum degree of the chamber needs to be controlled at 9 x 10 -4 Pa, the substrate temperature is 190 ℃, the Sn source temperature is 1115 ℃, the Se source temperature is 225 ℃, and after the temperature parameters are correct, the temperature parameters are correctedThe baffles of the sources are opened, the reaction time is 90min, and the thermosensitive layer (namely SnSe) is prepared x Thermally sensitive layer, x = 1.9); the SEM picture is shown in FIG. 9, wherein (a) is SnSe x SEM image of the surface of the heat-sensitive layer, and (b) SnSe x SEM image of the thermosensitive layer cross section.
In the molecular beam epitaxy equipment, an infrared absorption layer is prepared on the thermosensitive layer by using a molecular beam epitaxy growth method, and the infrared absorption layer is composed of SnSe vertical to the thermosensitive layer y Nanosheet (y = 1.9), wherein the adopted process parameters are as follows: the vacuum degree of the chamber needs to be controlled at 9 x 10 -4 Pa, the substrate temperature is 190 ℃, the Sn source temperature is 1115 ℃, the Se source temperature is 250 ℃, after the temperature parameters are correct, the baffle plates of the sources are opened simultaneously, the reaction time is 90min, and the SnSe is prepared y A nanosheet infrared absorbing layer (y = 1.9); and preparing the integrated infrared detector.
The prepared red light detector was irradiated with a 2W infrared lamp, and the current response results are shown in FIG. 10.
In summary, the invention provides a thermosensitive film, an infrared detector and a preparation method of the infrared detector. The Temperature Coefficient of Resistance (TCR) of the thermosensitive film is as high as 9.1%/K, which is higher than that of the traditional vanadium oxide and amorphous silicon thermosensitive film, and can improve the signal response strength of a device containing the thermosensitive film and the performance of the device. The infrared detector is simple in preparation method and low in cost, the infrared absorption layer is directly prepared on the thermosensitive layer, the preparation difficulty is greatly reduced, and meanwhile, due to the structure that the infrared absorption layer is in direct contact with the thermosensitive layer, all heat generated by the infrared absorption layer absorbing infrared light can be conducted to the thermosensitive layer, so that heat loss is reduced, the time required for heating the insulating layer in the prior art is saved, and the response speed and the sensitivity of the detector are further improved.
It will be understood that the invention is not limited to the examples described above, but that modifications and variations will occur to those skilled in the art in light of the above teachings, and that all such modifications and variations are considered to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A thermosensitive thin film comprising SnSe x A particle, wherein x = 1-2.
2. A thermosensitive film according to claim 1, wherein the thermosensitive film has a thickness of 0.1 to 5 μ M, and the thermosensitive film has a resistance of 500 Ω to 5M Ω.
3. An infrared detector, characterized in that the infrared detector comprises: a substrate, an electrode, a heat-sensitive layer and an infrared absorption layer which are sequentially stacked, wherein the heat-sensitive layer is the heat-sensitive film as claimed in claim 1 or 2.
4. The infrared detector of claim 9, wherein the infrared absorption layer is made of at least one of a nanosheet infrared absorption material, a nanowire-shaped infrared absorption material, a nanotube-shaped infrared absorption material, and a nanopillar-shaped infrared absorption material; the two-dimensional plane direction of the nano flaky infrared absorption material is perpendicular to the thermosensitive layer, and the axial directions of the nano linear infrared absorption material, the nano tubular infrared absorption material and the nano columnar infrared absorption material are perpendicular to the thermosensitive layer.
5. The infrared detector as set forth in claim 4, wherein the infrared absorption layer has a thickness of 0.2 to 10 μm;
and/or the thickness of the nano flaky infrared absorption material is 25-60 nm in the direction vertical to the two-dimensional plane of the nano flaky infrared absorption material.
6. Infrared detector according to claim 4, characterised in that the nano-platelet infrared absorbing material is chosen from SnSe y At least one of a nanosheet, a cuprous sulfide nanosheet, and a cuprous selenide nanosheet, wherein y =1 to 4.
7. A method for manufacturing an infrared detector according to any one of claims 9 to 6, comprising the steps of:
providing a substrate;
forming an electrode on the substrate;
forming a thermosensitive layer on the electrode; the thermosensitive layer is the thermosensitive film, and the thermosensitive film comprises SnSe x A particle, wherein x = 1-2;
an infrared absorbing layer is formed on the heat sensitive layer.
8. The production method according to claim 7, wherein a thermosensitive layer is formed on the electrode by an epitaxial growth method; an infrared absorption layer is formed on the thermosensitive layer by an epitaxial growth method.
9. The production method according to claim 1, wherein a thermosensitive layer is formed on the electrode by a molecular beam epitaxial growth method, wherein the process parameters employed are: the heating temperature of the substrate is 150-210 ℃, the heating temperature of the Sn source is 900-1900 ℃, the heating temperature of the Se source is 220-210 ℃, and the reaction time is 1-100 min.
10. The production method according to claim 1, wherein an infrared absorbing layer is formed on the thermosensitive layer by a molecular beam epitaxial growth method, wherein when SnSe is used as the infrared absorbing layer y When the nano-sheet is prepared, the adopted technological parameters are as follows: the heating temperature of the substrate is 150-210 ℃, the heating temperature of the Sn source is 900-1900 ℃, the heating temperature of the Se source is 220-210 ℃, and the reaction time is 1-100 min.
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| PCT/CN2022/138205 WO2024087338A1 (en) | 2022-10-25 | 2022-12-09 | Thermosensitive thin film, infrared detector, and manufacturing method for infrared detector |
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| JPH07151609A (en) * | 1993-12-01 | 1995-06-16 | Nippondenso Co Ltd | Infrared sensor |
| CN103482589B (en) * | 2013-09-29 | 2015-09-16 | 国家纳米科学中心 | A kind of one dimension Tin diselenide nano-array, its preparation method and application |
| US10825857B2 (en) * | 2016-09-29 | 2020-11-03 | Yantai Raytron Technology Co., Ltd | Pixel for uncooled infrared focal plane detector and preparation method therefor |
| CN112113669B (en) * | 2020-08-28 | 2021-08-13 | 哈尔滨工业大学 | Fish scale-shaped hollow SnSe nanotube self-powered infrared detector and preparation method thereof |
| CN112820787A (en) * | 2021-01-27 | 2021-05-18 | 深圳先进技术研究院 | Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
| CN114300568B (en) * | 2021-10-22 | 2024-03-26 | 中国石油大学(华东) | SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof |
| CN114122192A (en) * | 2021-11-04 | 2022-03-01 | 中国科学院深圳先进技术研究院 | Film preparation method and photoelectric detector |
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