CN109855327B - Selective absorption emitter - Google Patents
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- CN109855327B CN109855327B CN201811579743.3A CN201811579743A CN109855327B CN 109855327 B CN109855327 B CN 109855327B CN 201811579743 A CN201811579743 A CN 201811579743A CN 109855327 B CN109855327 B CN 109855327B
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Abstract
The invention discloses a selective absorption emitter which comprises a substrate, a metal film covered on the substrate and a unit array arranged on the metal film, wherein the unit array is composed of a plurality of basic units which are arranged at intervals and have the same external dimension, each basic unit is composed of a plurality of stacks which are sequentially stacked from top to bottom, each stack comprises a metal layer and a dielectric layer or two dielectric layers with different refractive indexes, the dielectric layer or the dielectric layers are positioned on the lower side of the metal layer, and the included angle between the side surface of each basic unit and the normal line of the substrate is-80 degrees. The selective absorption emitter is a broadband absorption emitter with wavelength selectivity. The correlation degree of the working wavelength of the passive radiation absorption type micro-array and the diameter or the length of the top and the bottom of the basic unit in the unit array is small, the precision requirement on the preparation technology is low, when the working wavelength is in a wave band of 8-13 mu m and has high absorption and emissivity, the passive radiation absorption type micro-array can be used for passive radiation refrigeration, and the required absorption characteristics can be obtained in other wavelength ranges by changing the design parameters of the array.
Description
Technical Field
The invention belongs to the field of photoelectric and photothermal functional materials and devices, and particularly relates to a selective absorption emitter.
Background
Kirchhoff's law of thermal radiation is used to describe the relationship between emissivity and absorptivity of an object, and indicates that at the same temperature, the ratio of monochromatic radiant flux density to monochromatic absorptivity of different objects at the same wavelength is equal to that of a black body at that temperature, i.e., absorptivity is equal to emissivity. It indicates that the greater the radiation power of the object, the greater the absorption power and vice versa.
Thermal radiation is a non-contact type of heat transfer, which relies on electromagnetic radiation to achieve energy transfer between hot and cold objects, even in vacuum. In 2014, the Shanhui Fan research team of Stanford university in America reports a passive radiation refrigeration method on Nature (515 volume, 540 page), wherein heat radiation is carried out on a low-temperature space at about-270 ℃ through an 8-13 micron atmosphere transparent window, and the surface temperature of an object is reduced to be about 4.9 ℃ lower than the room temperature. The research work demonstrated for the first time that the temperature of the objects could be lowered below room temperature without any energy consumption under direct solar irradiation conditions, since they introduced a multilayer film optical structure on the surface of the object, which has high emissivity and high solar reflection properties in the atmospheric transparent window band. In 2016, they further reduced the temperature by about 37 degrees Celsius under the exclusion of thermal conduction and convection, a work reported in the Nature Communications journal (Vol. 7, page 13729). In fact, however, this significant temperature drop can only be achieved using multilayer film optical structures having an average emissivity of about 0.67 at wavelengths of 8-13 microns. The emissivity spectrum shows that the emission of the material needs to be improved in an atmospheric transparent window, and the emission of the material needs to be inhibited in a non-atmospheric transparent window, namely, the wavelength selectivity of the material is improved.
As mentioned above, in order to increase the radiation capability of the object and increase the emissivity, it can be achieved by increasing the absorptivity. The research of obtaining perfect absorbers by utilizing the metamaterial has a long history. In 2008, a narrow band near perfect absorption was first reported by the w.j.padilla research team on Physical Review Letters (volume 101, page 097008), and the material could reach an absorption rate of 88% or more at a frequency of 11.5 GHz. After 2012, different research teams reported theoretical and experimental work on Nano Letters (volume 12, page 1443), Scientific Reports (volume 3, pages 1249 and 2662 and volume 4, page 4498) to achieve broadband selective near-perfect absorption with metamaterials with hyperbolic dispersion characteristics. In 2015, the Min Gu research team in Australia reported infrared thermal emitters based on hyperbolic metamaterials with average emissivity up to 0.8 in the atmospheric transparency window, higher than 0.67 for the multilayer film system (volume 3, page 1047), however, the researchers did not test the passive radiative cooling properties of the metamaterials. The reason for this is that the metamaterial needs to be prepared by an electron beam exposure technique, and the sample preparation process is complicated, which brings great difficulty to the practical application thereof. It follows that the use of good wavelength selectivity and high absorption of doubly curved metamaterials helps to achieve radiative cooling properties close to the theoretical limit, but with the premise that significant challenges in their sample preparation must be overcome.
The structural characteristics of the sample are analyzed, so that the metamaterial emitter with selectivity is mainly composed of a circular truncated cone array structure, the diameter of a circular truncated cone is gradually increased from top to bottom, and the metamaterial emitter specifically corresponds to the action wavelength: the diameter of the circular truncated cone is small, so that the absorption wavelength is short; the circular truncated cone has a large diameter, and the absorption wavelength is long. In the actual preparation process, the diameters of the bottom and the top of the circular truncated cone must be accurately defined so as to realize the selectivity of the target wavelength, the precision requirement on the preparation technology is high, the preparation difficulty is high, the efficiency is low, and the large-scale popularization and application are difficult to carry out. For example, patent No. cn201810440195.x discloses a visible-near infrared region broadband perfect absorber and a preparation method thereof, wherein the diameter of the top and the diameter of the bottom of a circular truncated cone are both clearly defined. Similarly, patent CN201510163603.8 discloses a broadband wave absorber with a semi-pyramid array, in which the semi-pyramid is formed by alternately stacking and combining a plurality of groups of metal-media with gradually changing side lengths. The pyramid has an upper side length of about 900nm and a lower side length of about 1800nm, and has high absorption and emissivity in a wide spectrum of a wave band of 8-14 microns.
It follows that varying the array element diameter or edge length is one of the primary ways to achieve broadband selectivity. Furthermore, the desired bandwidth can also be obtained by introducing resonant structures having various sizes. For example, patent CN201310590795.1 discloses a wave absorbing device with wave absorbing units composed of 5 rectangles with different sizes, which is characterized in that each rectangle includes at least two resonance layers, each resonance layer includes a dielectric layer and a metal layer, the dielectric constants of the dielectric layer materials are sequentially increased or decreased, and a plurality of single-frequency resonance peaks are superimposed in a manner of longitudinal superimposition of the resonance layers, so that the bandwidth of the absorption peaks can be expanded. The patent also states that the position of the absorption peak can be varied by changing the shape, size and dielectric material of the resonant cells. While the single-size structure generally does not have the broadband absorption emission characteristic, for example, patent CN201710347411.1 discloses a metamaterial absorption emitter based on a cross structure, wherein the selective emitter is a three-layer structure, and sequentially comprises a metal tungsten cross array, an alumina medium and a metal tungsten substrate from top to bottom, wherein the length and width of the metal cross are 0.48 μm, 0.1 μm and 0.15 μm, and the super-structure is near perfect absorption only at the wavelength of 2.33 μm.
In addition, there are inventions that do not change the array cell diameter or side length, nor introduce resonant structures of various sizes, but rather achieve broadband selectivity by introducing more materials. As patent cn201310223590.x discloses a wave absorber composed of cylindrical unit cells, absorption emittances of 96.7%, 98% and 91.2% at wavelengths of 5.22 μm, 6.35 μm and 7.76 μm are achieved by a metal-dielectric sandwich structure of 3 sets of different materials in the cylinder. Although the upper and lower sides of the inventive array unit are equal in size, they only have significant effect at a few specific wavelengths, and the broadband continuity is not good. Patent CN201410017139.7 discloses an absorption emitter with a square array structure, which is characterized in that the unit comprises at least 10 groups of resonance layers, each group of resonance layers comprises a dielectric layer and a metal layer, and the dielectric constant of the dielectric layer material is increased or decreased in sequence. The patent also states that the dielectric constant of the dielectric material varies in the range of 1 to 30 with a gradient in the range of 0.1 to 2. In fact, while using more materials may lead to more design freedom, it is limited by the type of material, and the design dielectric constant may not necessarily correspond to the material in nature, and may further increase the complexity and manufacturing cost of the experimental device.
Disclosure of Invention
The present invention is directed to a selective absorption emitter, which is a broadband absorption emitter with wavelength selectivity, and to the deficiencies of the prior art. The correlation degree of the working wavelength of the passive radiation absorption type micro-array and the diameter or the length of the top and the bottom of the basic unit in the unit array is small, the precision requirement on the preparation technology is low, when the working wavelength is in a wave band of 8-13 mu m and has high absorption and emissivity, the passive radiation absorption type micro-array can be used for passive radiation refrigeration, and the required absorption characteristics can be obtained in other wavelength ranges by changing the design parameters of the array.
The technical scheme adopted by the invention for solving the technical problems is as follows: a selective absorption emitter comprises a substrate, a metal film covered on the substrate and a unit array arranged on the metal film, wherein the unit array is composed of a plurality of basic units which are arranged at intervals and have the same external dimension, each basic unit is composed of a plurality of stacks which are sequentially stacked from top to bottom, each stack comprises a metal layer and a dielectric layer or two dielectric layers with different refractive indexes, the dielectric layer or the dielectric layers are positioned on the lower side of the metal layer, and the included angle between the side surface of each basic unit and the normal line of the substrate is-80 degrees.
The selective absorption emitter of the invention has a single basic unit in a unit array consisting of a plurality of stacks, and when the unit array consists of one stack, the unit array corresponds to the characteristic resonance wavelength of a single design; when composed of multiple stacks, the array of cells can achieve absorptive emission characteristics over a desired wavelength range. The included angle between the side surface of each basic unit and the normal line of the substrate of the selective absorption emitter is-80 degrees, various sizes and operation errors can be compatible, the precision requirement on the preparation technology is low, the working wavelength does not depend on the diameters or the lengths of the top and the bottom of the basic units in the unit array completely, and the required selective absorption emission characteristic can be realized under various conditions that the size of the top is equal to, larger than or smaller than that of the bottom. In addition, the resonance wavelength corresponding to a single stack is related to the thickness of each layer, and has no one-to-one correspondence with the diameter or length of the basic unit, and the absorption and emission characteristics in a required wavelength range can be obtained by adjusting the thickness of each layer of the stack within a certain range. Thus, in the case where the sides of each elementary cell are not strictly perpendicular to the substrate surface (i.e. the sides of the elementary cell are not at 0 ° to the normal to the substrate), the absorption emission characteristics of the cell array of the selective absorption emitter of the invention do not change significantly, the absorption emission characteristics can be modified and optimized by adjusting the thicknesses of the layers of the stacks to obtain absorption emission characteristics in the desired wavelength range, and specific absorption emission characteristics can be obtained in the design wavelength range by removing or adding certain stacks or stack combinations.
Preferably, the metal layer is made of one of magnesium, aluminum, titanium, iron, copper, gold, silver, molybdenum and tin, one of the dielectric layers is made of one of silicon, germanium, carbon, magnesium fluoride, zinc sulfide, zinc selenide, silicon oxide, zinc oxide, zirconium oxide, aluminum oxide, magnesium oxide, niobium oxide and cerium oxide, and two of the dielectric layers are respectively made of one of silicon, germanium, carbon, magnesium fluoride, zinc sulfide, zinc selenide, silicon oxide, zinc oxide, zirconium oxide, aluminum oxide, magnesium oxide, niobium oxide and cerium oxide.
Preferably, each of the stacks includes a metal layer and two dielectric layers with different refractive indexes, i.e., a first dielectric layer and a second dielectric layer disposed above and below the metal layer, where the refractive index of the second dielectric layer is greater than that of the first dielectric layer, and in each of the stacks, when the thickness of the first dielectric layer is denoted as a, and the thickness of the second dielectric layer is denoted as b, a and b satisfy the relationship: b/(a + b) < 0 ~ 1, and from the top to the bottom of each of the basic units, the value of b/(a + b) of each stack constituting the basic unit increases in order. When the stacks comprise a metal layer and two dielectric layers, according to the requirement of absorption emission bandwidth, a single basic unit in the unit array adopts a single or a plurality of stacks, and in each stack, the b/(a + b) value can be adjusted and determined according to the target wavelength of absorption emission waves by changing the thickness a of the first dielectric layer and the thickness b of the second dielectric layer, so that the characteristic resonance wavelength of the unit array can be adjusted and controlled. The target wavelength of the absorption emission wave can be determined by waveguide theory calculation.
Preferably, each of said elementary units consists of 8 stacks stacked one above the other, the 8 stacks having b/(a + b) values of 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 and 0.7, respectively.
Preferably, each of the basic units is a cylindrical basic unit, and each of the stacks comprises an Al metal layer and MgF which are sequentially arranged from top to bottom2A dielectric layer and a Ge dielectric layer.
Preferably, the cell array is prepared by ultraviolet pattern exposure, electron beam evaporation, nanoimprint, electron beam exposure, focused ion beam etching, magnetron sputtering or chemical vapor deposition.
Compared with the prior art, the invention has the following advantages:
(1) the selective absorption emitter has small correlation between the working wavelength of the selective absorption emitter and the diameters or the lengths of the tops and the bottoms of the basic units in the unit array, can realize the required selective absorption emission characteristics under various conditions that the size of the top is equal to, larger than or smaller than that of the bottom, can further adjust the thickness of each layer of the stack, remove or add certain stacks or stack combinations, conveniently obtain specific absorption emission characteristics in a designed wavelength range, and has greater advantages and potentials in experimental preparation and practical application.
(2) The deviation of the absorption and emission characteristics caused by the geometric errors of the basic units in the unit array of the selective absorption emitter can be corrected and optimized by adjusting the thickness of each layer of the stack, so that the precision requirement on the preparation technology is greatly reduced, and the efficient preparation of the selective absorption emitter is realized.
(3) The selective absorption emitter is a broadband absorption emitter with wavelength selectivity, and can be used for passive radiation refrigeration when the working wavelength of the selective absorption emitter is in a wave band of 8-13 mu m and the selective absorption emitter has high absorption and emissivity. Because the selective absorption emitter close to an ideal state can be obtained by freely regulating and controlling the absorption emission bandwidth and amplitude by changing the film thickness, the invention can obtain more obvious radiation refrigeration effect and is closer to the theoretical limit of radiation refrigeration technology.
(4) The selective absorption emitters of the present invention can also be used to achieve desired absorption characteristics in other wavelength ranges by varying array design parameters. Fewer limitations on structure and materials are beneficial to the popularization and application of the selective absorption emitter as an infrared absorption emission metamaterial, and the realization of the selective absorption emitter in other wave band related characteristics is further expanded.
Drawings
FIG. 1 is a schematic cross-sectional view of a selective absorption emitter of example 1;
FIG. 2 is a schematic view showing the structural connection of a single unit cell to a substrate in example 1;
FIG. 3 is a comparison of the emissivity of the selective absorption emitter of example 1 and the atmospheric transparent window;
FIG. 4 is the radiant cooling power of the selective absorption emitter of example 1 under no sunlight absorption conditions;
FIG. 5 is the radiant cooling power of the selective absorption emitter of example 1 under certain sunlight absorption conditions;
FIG. 6 is a graph showing the emissivity of the selective absorption emitter of example 2 when the angle between the side surface of the basic cell and the normal line of the substrate is positive;
FIG. 7 is a graph of the emissivity of the selective absorption emitter of example 3 when the angle between the sides of the basic cell and the normal to the substrate is negative;
FIG. 8 is a plot of the corrected and optimized thickness of the layers in the stack of the selective absorption emitter of example 3 at an angle of-10 to the normal to the substrate for the sides of the basic cell;
FIG. 9 is an emissivity spectrum of the selective absorption emitter of example 4 considering atmospheric ozone absorption;
figure 10 is the radiant cooling power of the selective absorption emitter of example 4 considering atmospheric ozone absorption.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
The selective absorption emitter in embodiment 1, as shown in fig. 1, includes a substrate 6, a metal film 5 covering the substrate 6, and a vertical cylindrical two-dimensional periodic unit array disposed on the metal film 5, where the unit array is composed of 9 basic units 1 arranged at intervals and having the same external dimension, each basic unit 1 is composed of 8 stacks stacked in sequence from top to bottom, each stack includes a metal layer 2 and two dielectric layers with different refractive indexes, i.e., a first dielectric layer 3 and a second dielectric layer 4 disposed above and below, and an included angle between a side surface of each basic unit 1 and a normal line of the substrate 6 is 0 °, that is, in this embodiment, the basic units 1 constituting the unit array are all cylindrical.
In example 1, a schematic view of structural connection of a single basic unit 1 and a substrate 6 is shown in fig. 2, where the period P is 5 μm and the cylinder diameter W is 3 μm. The metal film 5 is an aluminum film with the thickness of 150nm, and the substrate 6 is a glass substrate, so that the infrared electromagnetic wave can be completely blocked.
In example 1, the metal layer 2 constituting the single stack was an Al metal layer having a thickness of 10 nm; the first dielectric layer 3 is MgF2The second dielectric layer 4 is a Ge dielectric layer, and the total thickness of the first dielectric layer 3 and the second dielectric layer 4 is 100 nm. If the thickness of the first dielectric layer 3 is denoted as a, and the thickness of the second dielectric layer 4 is denoted as b, a and b satisfy the following relation: b/(a + b) is 0 to 1. In the embodiment, each basic unit 1 is composed of 8 stacks which are sequentially stacked from top to bottom, the total thickness of two dielectric layers in each stack is kept constant at 100nm, the thickness a of a first dielectric layer 3 in each stack from top to bottom is respectively 100nm, 90nm, 80nm, 70nm, 60nm, 50nm, 40nm and 30nm, and the thickness b of a second dielectric layer 4 in each stack from top to bottom is respectively 0nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm and 70 nm; the values of b/(a + b) corresponding to these 8 stacks were 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 and 0.7, respectively.
The cell array of example 1 can be prepared by conventional uv pattern exposure, electron beam evaporation, nanoimprint, electron beam exposure, focused ion beam etching, magnetron sputtering, or chemical vapor deposition methods.
A comparison of the emissivity of the selectively absorbing emitter of example 1 and the atmospheric transparent window is shown in figure 3. As shown in FIG. 3, the selective absorption emitter of example 1 has very high selective emission characteristics, the average emissivity in the atmospheric transparent window range (8-13 μm) is as high as 0.8, and the average emissivity in other bands is 0.1.
FIG. 4 is the radiant cooling power of the selective absorption emitter of example 1 under no sunlight absorption conditions. As shown in FIG. 4, in an ideal case, the non-emissivity h of the selective absorption emitter of example 1 is such that the absorption of solar illumination is not taken into account c0, 1, 3 and 6.9W/m2at/K, surface temperature T of emitter at thermal equilibriumsSpecific ambient temperature Ta55K, 31K, 18K and 10K respectively. FIG. 5 is the radiant cooling power of the selective absorption emitter of example 1 under certain sunlight absorption conditions. As shown in FIG. 5, if under the daytime environment, it is considered that 3% of the absorption is too muchIn sunlight, the non-emissivity h of the selectively absorbing emitter of example 1c0, 1, 3 and 6.9W/m2at/K, surface temperature T of emittersSpecific ambient temperature TaLow 33K, 21K, 12K and 7.5K respectively.
Since it is not entirely guaranteed in experiments or practice that the sides of the basic unit 1 are perpendicular to the surface of the substrate 6, but have a certain inclination. The selective absorption emitter of example 2 takes into account the tendency of the infrared spectral characteristics of the selective absorption emitter to change with experimental error. The difference from embodiment 1 is that in embodiment 2, the side face of each basic unit 1 has an angle θ larger than 0 ° with the normal to the substrate 6 (i.e., the side face of the basic unit 1 has a positive angle with the normal to the substrate 6). FIG. 6 is an emissivity spectrum of a selective absorption emitter of example 2 in the presence of this included angle. A schematic longitudinal cross-section of a single base unit 1 is shown in the inset below the curve in fig. 6, the top dimension of the base unit 1 being smaller than the bottom dimension. As can be seen from the graph in FIG. 6, as the included angle θ increases, the emissivity of the selective absorption emitter at the atmospheric transparent window wavelength of 8-13 μm is not reduced, but increased, and the bandwidth is also increased.
Example 3 is another experimental error case. The selective absorption emitter of example 3 is different from example 1 in that in example 3, the angle θ between the side surface of each basic cell 1 and the normal line of the substrate 6 is negative. FIG. 7 is an emissivity spectrum of a selective absorption emitter of example 3 in the presence of this included angle. The single base unit 1 is shown in a schematic longitudinal section in fig. 7 with the top dimension of the base unit 1 being larger than the bottom dimension, as indicated by the inset below the curve in fig. 7. As can be seen from the curve in FIG. 7, with the increase of the absolute value of the included angle θ, the emissivity of the selective absorption emitter at the wavelength of the atmospheric transparent window of 8-13 μm is reduced, the bandwidth is also reduced, and the selective absorption emitter still has good selective absorption emission characteristics.
In addition, the absorption emission characteristics of the selective absorption emitter of embodiment 3 can be revised and optimized again by only adjusting the ratio of the thickness of the first dielectric layer 3 to the thickness of the second dielectric layer 4 without changing the structural parameters. After correction and optimization, each basic unit 1 still uses a structure of 8 stacks, each stack keeps the metal layer 2 with the thickness of 10nm unchanged, but the total thickness of the two dielectric layers is changed, the thickness a of the first dielectric layer 3 in each stack from top to bottom is respectively 300nm, 60nm, 48nm, 42nm, 36nm, 30nm, 24nm and 18nm, and the thickness b of the second dielectric layer 4 in each stack from top to bottom is respectively 0nm, 12nm, 18nm, 24nm, 30nm, 36nm and 42 nm; the values of b/(a + b) corresponding to these 8 stacks were 0, 0.2, 0.3, 0.4, 0.5, 0.6 and 0.7, respectively. FIG. 8 is a graph of the corrected and optimized emissivity of the thicknesses of the layers in the stack of the selective absorption emitter of example 3 at an angle of-10 to the normal to the substrate 6 at the sides of the base unit 1. As shown in fig. 8, a higher emissivity and a desired bandwidth can still be achieved.
The selective absorption emitter structure of example 1 can be fine-tuned to reduce its emissivity at the ozone absorption peak, taking into account the presence of an ozone absorption peak in the atmospheric transparent window. The selective absorption emitter of example 4, obtained by removing 2 stacks of example 1 having b/(a + b) values of 0.1 and 0.2, can achieve the absorption emissivity shown in fig. 9, which has a reduced emissivity at the ozone absorption band of 9.3-10 μm, which further demonstrates that the thickness of each layer of the stack of the present invention can be adjusted to achieve absorption emission characteristics in the desired wavelength range. According to the calculation of the radiation refrigeration power, as shown in FIG. 10, the surface temperature T of the selective absorption emitter designed in example 4sSpecific ambient temperature TaThe temperature of the low 56K is improved by about 1K compared with the temperature of the low 56K in the embodiment 1.
Claims (4)
1. A selective absorption emitter, characterized by: the cell array is composed of a plurality of basic cells which are arranged at intervals and have the same overall dimension, each basic cell is composed of a plurality of stacked cells which are sequentially stacked from top to bottom, and the included angle between the side surface of each basic cell and the normal line of the substrate is-80 degrees; each of the stacks includes a metal layer and two dielectric layers with different refractive indexes, namely a first dielectric layer and a second dielectric layer, which are disposed above and below the metal layer, wherein the refractive index of the second dielectric layer is greater than that of the first dielectric layer, and when the thickness of the first dielectric layer is denoted as a and the thickness of the second dielectric layer is denoted as b in each stack, a and b satisfy the following relation: b/(a + b) < 0 ~ 1, and from the top to the bottom of each said basic unit, the value of b/(a + b) of each stack constituting the basic unit increases in order; each of said elementary units consists of 8 stacks stacked one above the other, the b/(a + b) values of these 8 stacks being 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 and 0.7, respectively.
2. A selective absorption emitter as claimed in claim 1, wherein: the metal layer is made of one of magnesium, aluminum, titanium, iron, copper, gold, silver, molybdenum and tin, and the two dielectric layers are respectively made of one of silicon, germanium, carbon, magnesium fluoride, zinc sulfide, zinc selenide, silicon oxide, zinc oxide, zirconium oxide, aluminum oxide, magnesium oxide, niobium oxide and cerium oxide.
3. A selective absorption emitter as claimed in claim 1, wherein: each basic unit is a cylindrical basic unit, and each stack comprises an Al metal layer and MgF which are sequentially arranged from top to bottom2A dielectric layer and a Ge dielectric layer.
4. A selective absorption emitter as claimed in claim 1, wherein: the unit array is prepared by ultraviolet pattern exposure, electron beam evaporation, nano imprinting, electron beam exposure, focused ion beam etching, magnetron sputtering or chemical vapor deposition.
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| CN110366361A (en) * | 2019-08-06 | 2019-10-22 | 集美大学 | A kind of wave absorbing device based on super surface |
| CN111175234A (en) * | 2020-01-03 | 2020-05-19 | 暨南大学 | Design method of plasma sensor and sensor prepared by same |
| CN113776226A (en) * | 2020-06-09 | 2021-12-10 | 南京大学 | Radiation refrigeration film |
| CN112460837A (en) * | 2020-12-05 | 2021-03-09 | 中国人民解放军国防科技大学 | Titanium dioxide selective wave absorber based on DBS algorithm and design method |
| CN112833582B (en) * | 2021-01-19 | 2022-05-06 | 郑州大学 | Silicon dioxide thermal metamaterial for realizing radiation refrigeration and application thereof |
| CN114114485A (en) * | 2021-11-24 | 2022-03-01 | 厦门大学 | Novel radiation refrigeration device based on super-structure surface broadband absorber |
| CN114736555A (en) * | 2022-04-21 | 2022-07-12 | 山东三齐能源有限公司 | Radiation cooling material and preparation method thereof, radiation cooling coating, film and carriage |
| CN115264992A (en) * | 2022-05-27 | 2022-11-01 | 东南大学 | Heat collection refrigeration plate capable of automatically adjusting heat radiation emission and reception and heat flow rectifier |
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