CN109855327A - A kind of selective absorbing emitter - Google Patents
A kind of selective absorbing emitter Download PDFInfo
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- CN109855327A CN109855327A CN201811579743.3A CN201811579743A CN109855327A CN 109855327 A CN109855327 A CN 109855327A CN 201811579743 A CN201811579743 A CN 201811579743A CN 109855327 A CN109855327 A CN 109855327A
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Abstract
A kind of selective absorbing emitter disclosed by the invention includes substrate, covers in the metallic film on substrate and the cell array being set on metallic film, cell array is made of the identical basic unit of multiple outer dimensions being intervally arranged, each basic unit is made of several stacking of being sequentially overlapped from top to bottom, it each stacks including metal layer and the one layer of dielectric layer or the different dielectric layer of two layers of refractive index on the downside of metal layer, the side of each basic unit and the normal angle of substrate are -80~80 °.The selective absorbing emitter is a kind of wide band absorption emitter with wavelength selectivity.Its operation wavelength and the degree of association of diameter or length at the top and bottom of basic unit in cell array are smaller, it is low to the required precision of technology of preparing, when its operation wavelength 8~13 mu m wavebands and have high-selenium corn and emissivity when, it can be used for passive radiation refrigeration, required absorption characteristic can also be obtained in other wave-length coverages by changing Array Design parameter.
Description
Technical field
The invention belongs to photoelectricity and photo-thermal functional material and devices fields, and in particular to a kind of selective absorbing emitter.
Background technique
Kirchhoff thermal radiation law is used to describe the relationship between object emission rate and absorptivity, which points out in phase
Under synthermal, different objects are to the ratio between the monochromatic radiation flux density of phase co-wavelength and monochromatic absorptivity and black matrix pair at this temperature
The monochromatic radiation flux density of Same Wavelength is equal namely absorptivity is equal to emissivity.It shows that the radianting capacity of object is bigger,
Absorbability is also bigger, and vice versa.
Heat radiation is a kind of contactless heat transfer type, it may be implemented between cold and hot object by electromagenetic wave radiation
Energy transmission, even if also can be carried out in a vacuum.2014, Shanhui Fan research team, Stanford Univ USA existed
A kind of method that Nature upper (volume 515, page 540) reports passive radiation refrigeration, by 8~13 microns of atmosphere transparent windows to
About subzero 270 degrees Celsius of low temperature cosmic space carries out heat radiation, and it is Celsius that body surface temperature is down to lower than room temperature about 4.9
Degree.The research work present for the first time under the conditions of direct sunlight without any energy consumption and by object temperature be down to room temperature with
Under, this is because they introduce a kind of multilayer film optical texture in body surface, which has in atmosphere transparent window wave band
There are high emissivity and Gaoyang reflective character.2016, they, further will be warm under conditions of completely cutting off heat transfer and thermal convection
Degree reduces about 37 degrees Celsius, and the work (volume 7, page 13729) on Nature Communications magazine is reported.However,
In fact, can obtain so significant temperature drop also is only the multilayer used in 8~13 micron wave length average emitted rates about 0.67
Film optical texture.It still needs to be promoted the display of its emissivity spectrum in atmosphere transparent window, need to inhibit its hair in non-atmosphere transparent window
It penetrates, that is, promotes its wavelength selectivity.
As previously mentioned, improving emissivity to increase object radiation ability, can be realized by improving absorptivity.And
It is had longer history using the research that metamaterial obtains perfect absorber.2008, W.J.Padilla research team existed
(volume 101, page 097008) report the nearly perfect absorption in narrowband for the first time on Physical Review Letters, which exists
It can reach 88% or more absorptivity at 11.5GHz frequency.After 2012, there are different research teams in Nano Letters successively
Benefit is reported on (volume 12, page 1443), Scientific Reports (volume 3, page 1249 and page 2662 and volume 4, page 4498)
The nearly perfect theory and experimental work absorbed of broadband selective is realized with the metamaterial with hyperbolic dispersion characteristics.2015
Year, Australian Min Gu research team (volume 3, page 1047) in Advanced Optical Materials reports base
In the infrared hot emitter of hyperbolic metamaterial, which, up to 0.8, is higher than multilayer film in atmosphere transparent window average emitted rate
The 0.67 of system, however, researcher does not carry out the passive radiation refrigeration characteristic test of the metamaterial.According to its reason of analysis
It is since the metamaterial needs to be prepared using electron beam lithography, sample preparation procedure is complex, this is in fact
Border application brings great difficulty.It can be seen that having using the good wavelength selectivity of hyperbolic metamaterial and high-absorbility
Help to realize the radiation refrigeration characteristic close to theoretical limit, but on condition that huge in terms of must overcome its sample preparation is chosen
War.
Analyzing its sample structure feature can be seen that this kind of selective metamaterial emitter mostly by round table-like battle array
Array structure composition, rotary table diameter become larger from top to bottom, and correspond specifically to it and act on wavelength: rotary table diameter is small, then absorbs
Wavelength is shorter；Rotary table diameter is big, then absorbing wavelength is longer.It must its rotary table bottom of explication and top in actual fabrication process
Portion's diameter can realize the selectivity to target wavelength, high to the required precision of technology of preparing, and preparation difficulty is big, low efficiency, difficult
To carry out large-scale promotion application.As to disclose a kind of Visible-to-Near InfaRed region broadband complete by patent CN201810440195.X
U.S. absorber and preparation method thereof has specific restriction to the top of rotary table, bottom diameter in the patent.Similarly, patent
CN201510163603.8 discloses a kind of broadband absorbing device of half pyramid array, and half pyramid is multiple groups side length ruler
The very little metal-dielectric alternating stack combinations gradually changed form.A length of 900nm in pyramid top or so, following a length of 1800nm
Left and right has high-selenium corn emissivity in 8~14 mu m waveband wide spectrums.
It can be seen that change array element diameter or side length are a kind of major ways for obtaining broadband selective.In addition,
There can be the resonance structure of sizes to obtain required bandwidth by introducing.As patent CN201310590795.1 is disclosed
A kind of wave absorbing device for inhaling wave unit based on 5 various sizes of rectangle compositions, it is characterised in that include at least two in each rectangle
A resonant layer, each resonant layer include that a dielectric layer and a metal layer, the dielectric constant of dielectric layer material successively increase
Or successively decrease, in such a way that resonant layer is longitudinally superimposed, multiple single-frequency point resonance peaks are superimposed, thus the bandwidth of expansible absorption peak.
The patent also indicates that the position that can change absorption peak by changing the shape, size and dielectric material of resonant element.And single ruler
Very little structure does not have wide band absorption emission characteristics usually, as patent CN201710347411.1 discloses one kind based on cross knot
The super structure material of structure absorbs emitter, and it is successively tungsten cross battle array from top to bottom that the selective radiator, which is three-decker,
Column, alumina medium and metal tungsten substrate, it is 0.48 μm, 0.1 μm and 0.15 μm that wherein the length of metal cross is generous, it only exists
Nearly perfect absorption at 2.33 mum wavelengths.
In addition, there are also inventions not to change array element diameter or side length, the resonance of sizes is not also introduced
Structure, but broadband selective is realized by introducing more materials.As patent CN201310223590.X disclose it is a kind of by
The wave absorbing device that cylindrical unit cell is constituted, is realized by the metal-dielectric sandwich of 3 groups of different materials in cylinder in 5.22 μ
M, 96.7%, 98% and 91.2% absorption emissivity is obtained at 6.35 μm and 7.76 mum wavelengths.Although the invention array list
It is following equal sized in member, but it only has remarkable effect in several certain wave strong points, and broadband continuity is bad.Patent
CN201410017139.7 discloses a kind of absorption emitter with square array configuration, it is characterised in that its unit includes
At least 10 groups of resonant layers, every group of resonant layer include a dielectric layer and a metal layer, the dielectric constant of dielectric layer material according to
It is secondary to increase or successively decrease.It is 1 to 30 that the patent, which alsies specify dielectric constant of the dielectric material variation range, and variable gradient range is
0.1 to 2.In fact, although bigger design freedom can be brought using more materials, limited also by material category,
And design dielectric constant may not have corresponding material in nature, and be also possible to that experimental facilities can be further increased
Complexity and manufacturing cost.
Summary of the invention
The technical problem to be solved by the present invention is in view of the deficiencies of the prior art, provide a kind of selective absorbing transmitting
Body, the selective absorbing emitter are a kind of wide band absorption emitters with wavelength selectivity.Its operation wavelength and unit battle array
The degree of association of diameter or length in column at the top and bottom of basic unit is smaller, low to the required precision of technology of preparing, when its work
Make wavelength 8~13 mu m wavebands and have high-selenium corn and emissivity when, can be used for passive radiation refrigeration, can also pass through change battle array
Column design parameter obtains required absorption characteristic in other wave-length coverages.
The technical scheme of the invention to solve the technical problem is: a kind of selective absorbing emitter, including lining
Bottom is covered in the metallic film on substrate and the cell array being set on metallic film, and the cell array is by multiple
Every the identical basic unit composition of the outer dimension of arrangement, each basic unit is sequentially overlapped from top to bottom by several
Stack composition, the one layer of dielectric layer stacked including metal layer and on the downside of metal layer or two layers of refractive index are not
Same dielectric layer, the side of each basic unit and the normal angle of the substrate are -80~80 °.
Selective absorbing emitter of the present invention, the single basic unit in cell array is stacked by several to be formed, by
One when stacking composition, cell array corresponds to the characteristic resonances wavelength individually designed；By it is multiple stack form when, cell array
Absorption emission characteristics in wave-length coverage needed for can be achieved.Selective absorbing emitter of the present invention, the side of each of which basic unit
The normal angle of face and substrate is -80~80 °, can be compatible with sizes and operating error, the required precision to technology of preparing
Low, operation wavelength not fully depends on diameter or length in cell array at the top and bottom of basic unit, in top ruler
It is very little be equal to, more than or less than bottom size it is all kinds of under the conditions of can realize required selective absorbing emission characteristics.In addition,
It individually stacks that corresponding resonant wavelength is related with each thickness degree, has no one-to-one relationship with the diameter or length of basic unit,
It in a certain range can be by adjusting the absorption emission characteristics stacked in wave-length coverage needed for each thickness degree obtains.Therefore each
The side of basic unit and substrate surface are not exact vertical (i.e. the normal angle of the side of basic unit and substrate is not 0 °)
In the case where, the absorption emission characteristics of the cell array of selective absorbing emitter of the present invention is not substantially change, can be with
Each thickness degree is stacked by adjusting and is modified optimization to emission characteristics is absorbed, and the absorption in wave-length coverage needed for obtaining emits spy
Property, and can by remove or increase it is certain stack or stack combination, obtained within the scope of design wavelength and specific absorb hair
Penetrate characteristic.
Preferably, the metal layer is made of one of magnesium, aluminium, titanium, iron, copper, gold, silver, molybdenum and tin material, one
Dielectric layer described in layer is by silicon, germanium, carbon, magnesium fluoride, zinc sulphide, zinc selenide, silica, zinc oxide, zirconium oxide, aluminium oxide, oxygen
Change one of magnesium, niobium oxide and cerium oxide material to be made, dielectric layer described in two layers is respectively by silicon, germanium, carbon, magnesium fluoride, sulphur
Change one of zinc, zinc selenide, silica, zinc oxide, zirconium oxide, aluminium oxide, magnesia, niobium oxide and cerium oxide material system
At.
Preferably, stacking Jie different with two layers of refractive index on the downside of metal layer including metal layer described in each
Matter layer, i.e., first medium layer setting up and down and second dielectric layer, the refractive index of the second dielectric layer are greater than described the
The refractive index of one dielectric layer, it is each it is described stack, the thickness of the first medium layer is denoted as a, by described
The thickness of second medium layer is denoted as b, then a and b meet relational expression: b/ (a+b)=0~1, and from the top of each basic unit
Portion to bottom, each b/ (a+b) value stacked for forming the basic unit are sequentially increased.It stacks including metal layer and two layers of medium
When layer, according to transmitted bandwidth requirement is absorbed, the single basic unit in cell array is stacked using single or multiple, is each stacked
In, it can be adjusted by changing the thickness a of first medium layer and the thickness b of second dielectric layer according to transmitted wave target wavelength is absorbed
And determine b/ (a+b) value, and then regulate and control the characteristic resonances wavelength of cell array.The absorption transmitted wave target wavelength can pass through waveguide
Theoretical calculation determines.
Preferably, the basic unit by 8 be sequentially overlapped from top to bottom stack and form, this 8 stack
B/ (a+b) value be respectively 0,0.1,0.2,0.3,0.4,0.5,0.6 and 0.7.
Preferably, the basic unit is cylindrical basic unit, each described stack including from upper and
Under the Al metal layer, the MgF that set gradually2Dielectric layer and Ge dielectric layer.
Preferably, the cell array is exposed by ultraviolet pattern exposure, electron beam evaporation, nano impression, electron beam
Light, focused-ion-beam lithography, magnetron sputtering or chemical vapor deposition method preparation.
Compared with prior art, the present invention has the advantage that
(1), in the operation wavelength and cell array of selective absorbing emitter of the present invention at the top and bottom of basic unit
The degree of association of diameter or length is smaller, be equal in top dimension, more than or less than bottom size it is all kinds of under the conditions of can be real
Existing required selective absorbing emission characteristics, and can further adjust to stack each thickness degree, removal or increase and certain stack or fold
Heap combination easily obtains specific absorption emission characteristics within the scope of design wavelength, makes the selective absorbing emitter in reality
It tests in terms of preparation and practical application with greater advantage and potentiality.
(2), in the cell array of selective absorbing emitter of the present invention caused by the error in geometrical form of basic unit
Absorption emission characteristics deviation can stack each thickness degree by adjusting and be modified optimization, this greatly facilitates reduction to technology of preparing
Required precision, realize the efficient preparation of the selective absorbing emitter.
(3), selective absorbing emitter of the present invention is a kind of wide band absorption emitter with wavelength selectivity, when its work
Make wavelength 8~13 mu m wavebands and have high-selenium corn and emissivity when, can be used for passive radiation refrigeration.Since it can be by changing
Become film thickness and be relatively free to regulation absorption transmitted bandwidth and amplitude, obtains the selective absorbing emitter close to perfect condition,
More significant radiation refrigeration effect thus can be obtained using the present invention, closer to the theoretical limit of radiation refrigeration technology.
(4), selective absorbing emitter of the present invention can also be obtained by changing Array Design parameter in other wave-length coverages
Obtain required absorption characteristic.Less limitation is conducive to selective absorbing emitter of the present invention as infrared suction on structure and material
The popularization and application of metamaterial are penetrated in transmitting-receiving, and further expand it in the realization of its all band correlation properties.
Detailed description of the invention
Fig. 1 is the cross-sectional structure schematic diagram of the selective absorbing emitter of embodiment 1；
Fig. 2 is the structure connection diagram of single basic unit and substrate in embodiment 1；
Fig. 3 is the emissivity of the selective absorbing emitter of embodiment 1 and the comparison of atmosphere transparent window；
Fig. 4 is radiation refrigeration power of the selective absorbing emitter of embodiment 1 under without sunlight acceptance condition；
Fig. 5 is radiation refrigeration power of the selective absorbing emitter of embodiment 1 in the case where there is certain sunlight acceptance condition；
When Fig. 6 is the side of basic unit and the normal angle of substrate is positive value, the selective absorbing emitter of embodiment 2
Emissivity spectrogram；
When Fig. 7 is the side of basic unit and the normal angle of substrate is negative value, the selective absorbing emitter of embodiment 3
Emissivity spectrogram；
When Fig. 8 is the side of basic unit and the normal angle of substrate is -10 °, the selective absorbing emitter of embodiment 3
The emissivity spectrogram stacked after the amendment optimization of each thickness degree；
Fig. 9 is the emissivity spectrogram of the selective absorbing emitter for the embodiment 4 for considering that atmospheric ozone absorbs；
Figure 10 is the radiation refrigeration power of the selective absorbing emitter for the embodiment 4 for considering that atmospheric ozone absorbs.
Specific embodiment
The present invention will be described in further detail below with reference to the embodiments of the drawings.
The selective absorbing emitter of embodiment 1, as shown in Figure 1, including substrate 6, covering in the metallic film on substrate 6
5 and the vertical cylindrical two-dimension periodic cell array that is set on metallic film 5, the shape that cell array is intervally arranged by 9
The identical basic unit 1 of size forms, each basic unit 1 by 8 be sequentially overlapped from top to bottom stack and form, each stack
Including metal layer 2 and the different dielectric layer of two layers of refractive index positioned at 2 downside of metal layer, i.e., first medium layer 3 setting up and down
With second dielectric layer 4, the side of each basic unit 1 and the normal angle of substrate 6 are 0 °, i.e., component units battle array in the present embodiment
The basic unit 1 of column is cylinder.
In embodiment 1, the structure connection diagram of single basic unit 1 and substrate 6 as shown in Fig. 2, P=5 μm of its period,
W=3 μm of body diameter.Metallic film 5 is the aluminium film of thickness 150nm, and substrate 6 is glass substrate, can stop infra-red electromagnetic completely
The transmission of wave.
In embodiment 1, constituting the metal layer 2 individually stacked is Al metal layer, with a thickness of 10nm；First medium layer 3 is
MgF2Dielectric layer, second dielectric layer 4 are Ge dielectric layer, and the overall thickness of first medium layer 3 and second dielectric layer 4 is 100nm.By
The thickness of one dielectric layer 3 is denoted as a, and the thickness of second dielectric layer 4 is denoted as b, then a and b meet relational expression: b/ (a+b)=0~1.
In the present embodiment, each basic unit 1 by 8 be sequentially overlapped from top to bottom stack and form, it is each stack in two layers of dielectric layer
Overall thickness keep 100nm it is constant, the top-down thickness a for each stacking middle first medium layer 3 be respectively 100nm, 90nm,
80nm, 70nm, 60nm, 50nm, 40nm, 30nm, the thickness b of second dielectric layer 4 be respectively 0nm, 10nm, 20nm, 30nm,
40nm,50nm,60nm,70nm；B/ (a+b) value stacked corresponding to this 8 is respectively 0,0.1,0.2,0.3,0.4,0.5,0.6
With 0.7.
Cell array in embodiment 1 can pass through existing ultraviolet pattern exposure, electron beam evaporation, nano impression, electronics
Beam exposure, focused-ion-beam lithography, magnetron sputtering or chemical vapor deposition method preparation.
Fig. 3 is shown in the comparison of the emissivity and atmosphere transparent window of the selective absorbing emitter of embodiment 1.As shown in figure 3,
The selective absorbing emitter of embodiment 1 has very high selective emission characteristics, at atmosphere transparent window range (8~13 μm)
Average emitted rate is up to 0.8, and the average emitted rate of all band is 0.1.
Fig. 4 is radiation refrigeration power of the selective absorbing emitter of embodiment 1 under without sunlight acceptance condition.Such as Fig. 4
It is shown, in the ideal case, the absorption to solar irradiation, the non-theramal radiation of the selective absorbing emitter of embodiment 1 are not considered
Coefficient hc=0,1,3 and 6.9W/m2When/K, emitter surface temperature T when thermal balancesThan environment temperature TaThe low 55K, 31K of difference,
18K and 10K.Fig. 5 is radiation refrigeration power of the selective absorbing emitter of embodiment 1 in the case where there is certain sunlight acceptance condition.
As shown in figure 5, if considering to absorb 3% solar irradiation under environment in the daytime, the selective absorbing emitter of embodiment 1
Non-theramal radiation coefficient hc=0,1,3 and 6.9W/m2When/K, emitter surface temperature TsThan environment temperature TaThe low 33K, 21K of difference,
12K and 7.5K.
Since the side of basic unit 1 can not be completely secured in experiment or practical operation perpendicular to 6 surface of substrate, but
There is the case where certain inclination.The selective absorbing emitter of embodiment 2 considers selective absorbing emitter when experimental error
The variation tendency of infrared spectral characteristic.The difference from embodiment 1 is that in embodiment 2, the side of each basic unit 1 and lining
There is the angle theta (i.e. the normal angle of the side of basic unit 1 and substrate 6 is positive value) greater than 0 ° in the normal at bottom 6.Fig. 6 is to deposit
The emissivity spectrogram of the selective absorbing emitter of embodiment 2 in this angle.The longitudinal section signal of single basic unit 1
For figure as shown in the illustration in Fig. 6 below curve, the top dimension of basic unit 1 is less than bottom size.The curve from Fig. 6 as it can be seen that
With the increase of angle theta, not only selective absorbing emitter does not subtract in the emissivity of 8~13 μm of atmosphere transparent window wavelength
It is small, it increased instead, and bandwidth also has increase.
Embodiment 3 is another experimental error situation.The selective absorbing emitter of embodiment 3, the difference with embodiment 1
It is, in embodiment 3, the side of each basic unit 1 and the normal angle θ of substrate 6 are negative value.Fig. 7 is that there are this angles
When embodiment 3 selective absorbing emitter emissivity spectrogram.In the Longitudinal cross section schematic such as Fig. 7 of single basic unit 1
Shown in illustration below curve, the top dimension of basic unit 1 is greater than bottom size.The curve from Fig. 7 is as it can be seen that with angle theta
The increase of absolute value, selective absorbing emitter are reduced in the emissivity of 8~13 μm of atmosphere transparent window wavelength, bandwidth
There is reduction, but still there is preferable selective absorbing emission characteristics.
Furthermore, it is possible to do not change structural parameters, the thickness of thickness and second dielectric layer 4 only by adusting first medium layer 3
The ratio of degree, can the absorption emission characteristics of selective absorbing emitter to embodiment 3 carry out amendment optimization again.It corrects excellent
After change, the structure that each basic unit 1 is still stacked using 8, each stack keeps 10nm thick metal 2 constant, but two layers
Dielectric layer overall thickness changes, the top-down thickness a for each stacking middle first medium layer 3 be respectively 300nm, 60nm,
48nm, 42nm, 36nm, 30nm, 24nm, 18nm, the thickness b of second dielectric layer 4 be respectively 0nm, 0nm, 12nm, 18nm, 24nm,
30nm,36nm,42nm；B/ (a+b) value stacked corresponding to this 8 is respectively 0,0,0.2,0.3,0.4,0.5,0.6 and 0.7.
When Fig. 8 is the side of basic unit 1 and the normal angle of substrate 6 is -10 °, the selective absorbing emitter of embodiment 3 is stacked
Emissivity spectrogram after each thickness degree amendment optimization.As shown in figure 8, higher emissivity and required bandwidth still can be obtained.
In view of there is Ozone Absorption peaks in atmosphere transparent window, thus the selective absorbing in example 1 can be sent out
Emitter Structure is finely adjusted, and reduces its emissivity at Ozone Absorption peak position.Removing b/ (a+b) value in embodiment 1 is 0.1 He
2 of 0.2 stack to arrive the selective absorbing emitter of embodiment 4, can obtain absorption emissivity as shown in Figure 9, it
Emissivity decreases at 9.3~10 μm of Ozone Absorption wave bands, this further demonstrates that can be folded by adjusting in the present invention
Heap each thickness degree obtains the absorption emission characteristics in required wave-length coverage.According to its radiation refrigeration power calculation, such as Figure 10 institute
Show, the surface temperature T of selective absorbing emitter designed by embodiment 4sThan environment temperature TaLow 56K, relative to embodiment 1,
Its temperature drop improves 1K or so again.
Claims (6)
1. a kind of selective absorbing emitter, it is characterised in that: including substrate, cover in the metallic film on substrate and be set to
Cell array on metallic film, the cell array is by the identical elementary unit groups of multiple outer dimensions being intervally arranged
It is made of at, the basic unit several stacking of being sequentially overlapped from top to bottom, each described stacks including gold
Belong to layer and the one layer of dielectric layer or the different dielectric layer of two layers of refractive index on the downside of metal layer, each basic unit
The normal angle of side and the substrate is -80~80 °.
2. a kind of selective absorbing emitter according to claim 1, it is characterised in that: the metal layer by magnesium, aluminium,
One of titanium, iron, copper, gold, silver, molybdenum and tin material is made, and dielectric layer described in one layer is by silicon, germanium, carbon, magnesium fluoride, vulcanization
One of zinc, zinc selenide, silica, zinc oxide, zirconium oxide, aluminium oxide, magnesia, niobium oxide and cerium oxide material is made,
Dielectric layer described in two layers is respectively by silicon, germanium, carbon, magnesium fluoride, zinc sulphide, zinc selenide, silica, zinc oxide, zirconium oxide, oxidation
One of aluminium, magnesia, niobium oxide and cerium oxide material is made.
3. a kind of selective absorbing emitter according to claim 1 or 2, it is characterised in that: stack packet described in each
Include the metal layer dielectric layer different with two layers of refractive index on the downside of metal layer, i.e., first medium layer setting up and down and second
Dielectric layer, the refractive index of the second dielectric layer are greater than the refractive index of the first medium layer, stack in each described
In, the thickness of the first medium layer is denoted as a, the thickness of the second dielectric layer is denoted as b, then a and b meet relationship
Formula: b/ (a+b)=0~1, and from the top-to-bottom of each basic unit forms each of the basic unit and stacks
B/ (a+b) value is sequentially increased.
4. a kind of selective absorbing emitter according to claim 3, it is characterised in that: the basic unit by
8 be sequentially overlapped from top to bottom stack composition, this 8 b/ (a+b) values stacked are respectively 0,0.1,0.2,0.3,0.4,
0.5,0.6 and 0.7.
5. a kind of selective absorbing emitter according to claim 1, it is characterised in that: each the basic unit is
Cylindrical basic unit, each described stacks Al metal layer, MgF including setting gradually from top to bottom2Dielectric layer and Ge are situated between
Matter layer.
6. a kind of selective absorbing emitter according to claim 1, it is characterised in that: the cell array passes through purple
Outer graph exposure, electron beam evaporation, nano impression, electron beam exposure, focused-ion-beam lithography, magnetron sputtering or chemical vapor deposition
Product method preparation.
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| CN110366361A (en) * | 2019-08-06 | 2019-10-22 | 集美大学 | A kind of wave absorbing device based on super surface |
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| CN112833582A (en) * | 2021-01-19 | 2021-05-25 | 郑州大学 | Silicon dioxide thermal metamaterial for realizing radiation refrigeration and application thereof |
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| CN114114485A (en) * | 2021-11-24 | 2022-03-01 | 厦门大学 | Novel radiation refrigeration device based on super-structure surface broadband absorber |
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