CN109943810A - A kind of three-dimensional taper nanometer film structure, preparation method and applications - Google Patents
A kind of three-dimensional taper nanometer film structure, preparation method and applications Download PDFInfo
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- CN109943810A CN109943810A CN201910170123.2A CN201910170123A CN109943810A CN 109943810 A CN109943810 A CN 109943810A CN 201910170123 A CN201910170123 A CN 201910170123A CN 109943810 A CN109943810 A CN 109943810A
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Abstract
The invention belongs to new energy technology development field more particularly to a kind of three-dimensional taper nanometer film structures, preparation method and applications.The present invention provides a kind of three-dimensional taper nanometer film structure, are as follows: silica-hafnium oxide composite layer and silver layer, silicon dioxide layer are set to the top of hafnium oxide layer；Silica-hafnium oxide composite layer quantity is greater than 10 layers, and silica-hafnium oxide composite layer is provided with above silver layer.The present invention also provides a kind of preparation method of above-mentioned three-dimensional taper nanometer film structure, the product obtained the present invention also provides a kind of above-mentioned three-dimensional taper nanometer film structure or above-mentioned preparation method is radiating the application in cooling device.In the present invention, three-dimensional taper nanometer film structure is introduced, it can be achieved that high performance Dual-window atmospheric radiation, and may finally be realized and efficient passive be radiated the ability to cool；It solves in the prior art, there is the lower technological deficiencies of net radiation cooling power for cooling method in the daytime.
Description
Technical field
The invention belongs to new energy technology development field more particularly to a kind of three-dimensional taper nanometer film structures, preparation side
Method and its application.
Background technique
Energy crisis and environmental pollution are the two large problems that the world today faces, research and development low pollution, low energy consumption it is new
The energy, new method, new technology are a urgent tasks.According to thermodynamic principles, natural large capacity cold source also is used as energy,
For example, iceberg and the deep-sea water below of terrestrial pole are exactly such cold source, but use and limited by objective condition, or
Cost is excessively high.Under the conditions of existing for no medium, have the temperature difference two objects can positive energy exchange in the form of radiation, finally
The temperature of two objects is equal.Huge spatial volume makes it " black hole " of heat in universe, if in the form of an electromagnetic wave
Unnecessary heat is discharged from ground space-ward, so that it may achieve the purpose that refrigeration, radiation cooling is exactly such a Non-energy-consumption
The type of cooling.
Earth'S atmosphere there are two highly transparent window, range respectively at 8~13 μm and 16~26 μm of infrared band,
Atmosphere is very weak in the wave band radiation in atmospheric window, and outside atmospheric window, Earth'S atmosphere is that height radiates.According to
Planck law, at environment temperature (300K or so), the heat radiation peak value of a black matrix is just at 8-13 μm of atmospheric window
In range, this feature passively to radiate cooling mechanism.
Technical staff is cooling to nocturnal radiation to carry out theoretical extensive research, and successfully demonstrates it by various researchs
Feasibility proposes polymer, pigment coating, metal oxide and the gas panel and multilayer cooling for nocturnal radiation and partly leads
Body and metal and dielectric photon structure film.However, maximum cooling requirement is usually there is a situation where the direct sunlight on daytime, by
In incident solar radiation, realizes that radiation in the daytime is cooling and have more challenge.
In the prior art, realize that method cooling in the daytime is to cover cooler with Optical Solar Reflector, by partially transparent
Shielded layer (polyethylene or ethylene copolymer foil as having reflective pigment and fuel) stop unwanted spectrum to reach cooling
Device.However, although the purpose of radiation cooling may be implemented in the increasingly cooling means of the prior art, but there is no table in atmospheric window
Reveal good infra-red radiation selectivity and high performance infrared absorbance, and then causes net radiation cooling power not high.
Therefore, a kind of three-dimensional taper nanometer film structure, preparation method and applications are developed, for solving the prior art
In, cooling method becomes those skilled in the art urgently there is the lower technological deficiency of net radiation cooling power in the daytime
It solves the problems, such as.
Summary of the invention
In view of this, the present invention provides a kind of three-dimensional taper nanometer film structures, preparation method and applications, for solving
Certainly in the prior art, there is the lower technological deficiencies of net radiation cooling power for method cooling in the daytime.
The present invention provides a kind of three-dimensional taper nanometer film structure, the three-dimensional taper nanometer film structure are as follows: dioxy
SiClx-hafnium oxide composite layer and silver layer, silicon dioxide layer are set to the top of hafnium oxide layer；
The silica-hafnium oxide composite layer quantity is greater than 10 layers, is provided with several layers above the silver layer
The silica-hafnium oxide composite layer.
Preferably, the silver layer with a thickness of 120nm~200nm.
Preferably, the silicon dioxide layer with a thickness of 1.8 μm~2.0 μm.
Preferably, the hafnium oxide layer with a thickness of 150nm~200nm.
Preferably, the bottom width of the three-dimensional taper nanometer film structure is 10 μm~11 μm, and the three-dimensional taper is received
The top width of rice film structure is 1.5 μm~2 μm.
Preferably, the three-dimensional taper nanometer film structure further include: substrate layer, the substrate layer are set to the silver layer
Lower part, the substrate layer be silicon wafer layer.
Preferably, the spacing and single 3 D taper nanometer film structure of the adjacent three-dimensional taper nanometer film structure
Bottom width is identical.
Preferably, the silica-hafnium oxide composite layer quantity is 10~20 layers.
The present invention also provides a kind of preparation sides including three-dimensional taper nanometer film structure described in any of the above one
Method, the preparation method is that: after first carrying out electron beam evaporation, then it is focused ion beam etching, obtains product；
The method of the electron beam evaporation are as follows: by electron beam evaporation on silicon wafer depositing silver layers, then successively replace again
Hafnium oxide layer and silicon dioxide layer are evaporated, monitors thickness, every one layer of deposition using quartz crystal monitor during the deposition process
Shi Junxu is repeatedly cooled down；
The method of the focused-ion-beam lithography are as follows: after being prepared for multi-layer film structure, using focused ion beam system,
Multilayer film pyramid structure is prepared along the residence time of tapered sidewalls under different milling depths by control ion beam.
The present invention also provides a kind of including three-dimensional taper nanometer film structure or above-mentioned system described in any of the above one
Application of the product that Preparation Method obtains in radiation cooling device.
In conclusion the present invention provides a kind of three-dimensional taper nanometer film structure, are as follows: silica-hafnium oxide is multiple
It closes layer and silver layer, silicon dioxide layer is set to the top of hafnium oxide layer；The silica-hafnium oxide composite layer number
Amount is greater than 10 layers, is provided with silica described in several layers-hafnium oxide composite layer above the silver layer.The present invention also provides
A kind of preparation method of above-mentioned three-dimensional taper nanometer film structure, the present invention also provides a kind of above-mentioned three-dimensional taper nanometers
Application of the product that film structure or above-mentioned preparation method obtain in radiation cooling device.Technical solution provided by the invention
In, three-dimensional taper nanometer film structure is introduced, it can be achieved that high performance Dual-window atmospheric radiation, and may finally realize high efficiency
Passively radiate the ability to cool；It is computed, technical solution products obtained therefrom provided by the invention, the direct sunlight the case where
Under, the solar spectrum more than 95% can be reflected, and the high IR that can be realized Dual-window absorbs.It can divide on daytime and night
156W/m is not reached more than2And 199W/m2Net radiated power, and in the case where environment temperature is 300K, daytime and night
Between be possible to reach the equilibrium temperature of 257.6K and 241.5K respectively.A kind of three-dimensional taper nanometer tunic knot provided by the invention
Structure, preparation method and applications solve in the prior art, and there is net radiation cooling power is lower for cooling method in the daytime
Technological deficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of schematic diagram of three-dimensional taper nanometer film structure provided by the invention；
Wherein, silver layer 1, hafnium oxide layer 2 and silicon dioxide layer 3.
Specific embodiment
The embodiment of the invention provides a kind of three-dimensional taper nanometer film structures, preparation method and applications, for solving
In the prior art, there is the lower technological deficiencies of net radiation cooling power for method cooling in the daytime.
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
In order to which the present invention is described in more detail, below with reference to embodiment to a kind of three-dimensional taper nanometer tunic provided by the invention
Structure, preparation method and applications, are specifically described.
Referring to Fig. 1, the present invention provides a kind of three-dimensional taper nanometer film structure, are as follows: silica-hafnium oxide is multiple
It closes layer and silver layer, silicon dioxide layer is set to the top of hafnium oxide layer；Silica-hafnium oxide composite layer quantity is big
Several layers silica-hafnium oxide composite layer is provided in 10 layers, above silver layer.A kind of three-dimensional taper provided by the invention
Nanometer film structure, preparation method and applications, solve in the prior art, and there is net radiation coolings for cooling method in the daytime
The lower technological deficiency of power.
In technical solution provided in an embodiment of the present invention, two kinds of nonmetal medium material-hafnium oxides and dioxy have been used
SiClx, wherein hafnium oxide has high refractive index, the characteristic of low UV absorption, has certain inhibition to the absorption of sunlight
Effect, silica refractive index is low, optical clear, and absorption peak draws within the scope of 8~13 μm of atmospheric window at 9 μm or so
Enter and absorb stronger material, radiance can be improved.
Further, three-dimensional pyramid nanometer multilayer membrane structure can form moth eye effect, further enhance infrared absorption
Characteristic, the height for reaching 0.3~4 mu m waveband of solar spectrum is anti-, in two 8~13 μm of atmospheric windows, 16~26 μm of realization high-selenium corns.
In technical solution provided in an embodiment of the present invention, by three-dimensional taper nanometer film structure, it can be achieved that high performance
Dual-window atmospheric radiation overcomes metal material and the height of solar spectrum is lost, so that feelings of the cooler in direct sunlight on daytime
It is realized under condition passive cooling.
Meanwhile structure provided in an embodiment of the present invention, Dual-window is also able to achieve while reaching solar spectrum high reflection
High IR absorb, to realize in the case where direct sunlight on daytime, reach efficient cooling power and relatively low flat
Weigh temperature.It is computed, technical solution products obtained therefrom provided by the invention can reflect in the case where direct sunlight more than 95%
Solar spectrum, and can be realized Dual-window high IR absorb.It can respectively reach on daytime and night more than 156W/m2
And 199W/m2Net radiated power, and when environment temperature be 300K in the case where, daytime and night are possible to reach respectively
The equilibrium temperature of 257.6K and 241.5K.
For ensure silver layer can abundant reflected sunlight, a kind of three-dimensional taper nanometer tunic knot provided in an embodiment of the present invention
In structure, silver layer with a thickness of 120nm~200nm.
It is matched according to both silica and hafnium oxide refractive index with thickness, generates RESONANCE ABSORPTION, further
The absorptivity for improving atmospheric window, in technical solution provided in an embodiment of the present invention, silicon dioxide layer with a thickness of 1.8 μm~
2.0 μm, hafnium oxide layer with a thickness of 150nm~200nm.
Further optimisation technique scheme reduces the reflection moth eye effect of atmospheric window wave band preferably using moth eye effect
It answers, reduces the reflection of atmospheric window wave band, in a kind of three-dimensional taper nanometer film structure provided in an embodiment of the present invention, three-dimensional cone
The bottom width of shape nanometer film structure is 10 μm~11 μm, and the top width of three-dimensional taper nanometer film structure is 1.5 μm~2
μm。
A kind of three-dimensional taper nanometer film structure provided in an embodiment of the present invention further include: substrate layer, substrate layer are set to
The lower part of silver layer, substrate layer are silicon wafer layer；Substrate layer can play good supporting role as substrate.
Effectively to ensure that the structure size designed is the sub-wavelength knot of 8~13 μm of atmospheric transmission window and 16~26 mu m wavebands
Structure, thus improve structure to the absorbability of atmospheric window wave band, in technical solution provided in an embodiment of the present invention, adjacent three-dimensional
The spacing of taper nanometer film structure is identical as the bottom width of single 3 D taper nanometer film structure.
When silica-hafnium oxide composite layer quantity is less than 10 layers, the absorptivity at atmospheric window will drop
It is low, so that cooling efficiency can be reduced；When silica-hafnium oxide composite layer quantity is greater than 20 layers, multi-layer film structure is thick
Degree increases, and the loss to solar spectrum is caused to increase, so that device reduces the reflectivity of solar spectrum wave band, to drop
Low cooling efficiency, while also will increase the cost of sample preparation, therefore, take into account with above-mentioned factor, it is provided in an embodiment of the present invention
In a kind of three-dimensional taper nanometer film structure, silica-hafnium oxide composite layer quantity is 10~20 layers.
The present invention also provides a kind of preparation method of above-mentioned three-dimensional taper nanometer film structure, be electron beam evaporation method+
Focused-ion-beam lithography method, specifically: first by electron beam evaporation depositing silver layers on silicon wafer, then successively alternatively vaporised again
Hafnium oxide layer and silicon dioxide layer, during the deposition process using quartz crystal monitor monitor thickness, it is every deposition one layer when it is equal
It need to repeatedly cool down.Multiple cooling can be effectively prevented due to the high temperature needed for evaporating and overheat.It is being prepared for multi-layer film structure
Later, using focused ion beam (FIB) system, by control ion beam under different milling depths along the stop of tapered sidewalls when
Between, prepare multilayer film pyramid structure.
The present invention also provides the products that a kind of above-mentioned three-dimensional taper nanometer film structure or above-mentioned preparation method obtain
Application in radiation cooling device.By way of radiation cooling, the storage for medical supplies such as food, drugs realizes nothing
Energy consumption storage.
In conclusion the present invention provides a kind of three-dimensional taper nanometer film structure, are as follows: silica-hafnium oxide is multiple
It closes layer and silver layer, silicon dioxide layer is set to the top of hafnium oxide layer；The silica-hafnium oxide composite layer number
Amount is greater than 10 layers, is provided with silica described in several layers-hafnium oxide composite layer above the silver layer.The present invention also provides
A kind of preparation method of above-mentioned three-dimensional taper nanometer film structure, the present invention also provides a kind of above-mentioned three-dimensional taper nanometers
Application of the product that film structure or above-mentioned preparation method obtain in radiation cooling device.Technical solution provided by the invention
In, three-dimensional taper nanometer film structure is introduced, it can be achieved that high performance Dual-window atmospheric radiation, and may finally realize high efficiency
Passively radiate the ability to cool；It is computed, technical solution products obtained therefrom provided by the invention, the direct sunlight the case where
Under, the solar spectrum more than 95% can be reflected, and the high IR that can be realized Dual-window absorbs.It can divide on daytime and night
156W/m is not reached more than2And 199W/m2Net radiated power, and in the case where environment temperature is 300K, daytime and night
Between be possible to reach the equilibrium temperature of 257.6K and 241.5K respectively.A kind of three-dimensional taper nanometer tunic knot provided by the invention
Structure, preparation method and applications solve in the prior art, and there is net radiation cooling power is lower for cooling method in the daytime
Technological deficiency.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of three-dimensional taper nanometer film structure, which is characterized in that the three-dimensional taper nanometer film structure are as follows: titanium dioxide
Silicon-hafnium oxide composite layer and silver layer, silicon dioxide layer are set to the top of hafnium oxide layer；
The silica-hafnium oxide composite layer quantity is greater than 10 layers, is provided with described in several layers above the silver layer
Silica-hafnium oxide composite layer.
2. three-dimensional taper nanometer film structure according to claim 1, which is characterized in that the silver layer with a thickness of
120nm~200nm.
3. three-dimensional taper nanometer film structure according to claim 1, which is characterized in that the thickness of the silicon dioxide layer
It is 1.8 μm~2.0 μm.
4. three-dimensional taper nanometer film structure according to claim 1, which is characterized in that the thickness of the hafnium oxide layer
For 150nm~200nm.
5. three-dimensional taper nanometer film structure according to claim 1, which is characterized in that the three-dimensional taper nanometer tunic
The bottom width of structure is 10 μm~11 μm, and the top width of the three-dimensional taper nanometer film structure is 1.5 μm~2 μm.
6. three-dimensional taper nanometer film structure according to claim 1, which is characterized in that the three-dimensional taper nanometer tunic
Structure further include: substrate layer, the substrate layer are set to the lower part of the silver layer, and the substrate layer is silicon wafer layer.
7. three-dimensional taper nanometer film structure according to claim 1, which is characterized in that the adjacent three-dimensional taper nanometer
The spacing of film structure is identical as the bottom width of single 3 D taper nanometer film structure.
8. three-dimensional taper nanometer film structure according to claim 1, which is characterized in that the silica-titanium dioxide
The quantity of hafnium composite layer is 10~20 layers.
9. a kind of preparation method including three-dimensional taper nanometer film structure described in claim 1 to 8 any one, feature
It is, the preparation method is that after first carrying out electron beam evaporation, then it is focused ion beam etching, obtain product；
The method of the electron beam evaporation are as follows: by electron beam evaporation on silicon wafer depositing silver layers, then successively alternatively vaporised again
Hafnium oxide layer and silicon dioxide layer, during the deposition process using quartz crystal monitor monitor thickness, it is every deposition one layer when it is equal
It need to repeatedly cool down；
The method of the focused-ion-beam lithography are as follows: after being prepared for multi-layer film structure, using focused ion beam system, pass through
Ion beam is controlled under different milling depths along the residence time of tapered sidewalls, prepares multilayer film pyramid structure.
10. a kind of including described in three-dimensional taper nanometer film structure described in claim 1 to 8 any one or claim 9
Application of the obtained product of preparation method in radiation cooling device.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350048A (en) * | 2019-07-05 | 2019-10-18 | 电子科技大学 | A kind of photon radiation radiator structure |
| CN112833582A (en) * | 2021-01-19 | 2021-05-25 | 郑州大学 | Silicon dioxide thermal metamaterial for realizing radiation refrigeration and application thereof |
| CN112963983A (en) * | 2021-02-08 | 2021-06-15 | 上海海事大学 | Double-structure infrared broadband absorber for daytime radiation cooling |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779447A (en) * | 2015-04-08 | 2015-07-15 | 哈尔滨工业大学深圳研究生院 | Structure of broadband wave absorber and preparation method |
| TW201632919A (en) * | 2014-11-28 | 2016-09-16 | 富士軟片股份有限公司 | Infrared reflection pattern forming body |
| US20160363396A1 (en) * | 2015-06-15 | 2016-12-15 | Palo Alto Research Center Incorporated | Metamaterials-Enhanced Passive Radiative Cooling Panel |
| CN108710169A (en) * | 2018-08-03 | 2018-10-26 | 浙江大学 | Radiation refrigeration optical filter and its preparation method and application |
| CN209836290U (en) * | 2019-03-06 | 2019-12-24 | 深圳大学 | Three-dimensional conical nano-layer membrane structure |
-
2019
- 2019-03-06 CN CN201910170123.2A patent/CN109943810A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201632919A (en) * | 2014-11-28 | 2016-09-16 | 富士軟片股份有限公司 | Infrared reflection pattern forming body |
| CN104779447A (en) * | 2015-04-08 | 2015-07-15 | 哈尔滨工业大学深圳研究生院 | Structure of broadband wave absorber and preparation method |
| US20160363396A1 (en) * | 2015-06-15 | 2016-12-15 | Palo Alto Research Center Incorporated | Metamaterials-Enhanced Passive Radiative Cooling Panel |
| CN108710169A (en) * | 2018-08-03 | 2018-10-26 | 浙江大学 | Radiation refrigeration optical filter and its preparation method and application |
| CN209836290U (en) * | 2019-03-06 | 2019-12-24 | 深圳大学 | Three-dimensional conical nano-layer membrane structure |
Non-Patent Citations (4)
| Title |
|---|
| AASWATH P. RAMAN等: "Passive radiative cooling below ambient air temperature under direct sunlight", 《NATURE》, vol. 515, pages 540 - 544, XP055156911, DOI: 10.1038/nature13883 * |
| DONG WU等: "The design of ultra-broadband selective near-perfect absorber based on photonic structures to achieve near-ideal daytime radiative cooling", 《MATERIALS AND DESIGN》, vol. 139, pages 104 - 111, XP085321499, DOI: 10.1016/j.matdes.2017.10.077 * |
| FEI DING等: "Ultra-broadband microwave metamaterial absorber", 《APPLIED PHYSICS LETTERS》, vol. 100, pages 103506 - 1 * |
| MD MUNTASIR HOSSAIN等: "A Metamaterial Emitter for Highly Effi cient Radiative Cooling", 《ADVANCED OPTICAL MATERIALS》, vol. 3, no. 8, pages 1 - 5 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350048A (en) * | 2019-07-05 | 2019-10-18 | 电子科技大学 | A kind of photon radiation radiator structure |
| CN112833582A (en) * | 2021-01-19 | 2021-05-25 | 郑州大学 | Silicon dioxide thermal metamaterial for realizing radiation refrigeration and application thereof |
| CN112963983A (en) * | 2021-02-08 | 2021-06-15 | 上海海事大学 | Double-structure infrared broadband absorber for daytime radiation cooling |
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