CN111239881A - Metamaterial wave absorber with high reflection in solar spectrum and high absorption in intermediate infrared - Google Patents
Metamaterial wave absorber with high reflection in solar spectrum and high absorption in intermediate infrared Download PDFInfo
- Publication number
- CN111239881A CN111239881A CN201910845724.9A CN201910845724A CN111239881A CN 111239881 A CN111239881 A CN 111239881A CN 201910845724 A CN201910845724 A CN 201910845724A CN 111239881 A CN111239881 A CN 111239881A
- Authority
- CN
- China
- Prior art keywords
- band
- metamaterial
- silicon dioxide
- absorption
- ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 40
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 33
- 238000001228 spectrum Methods 0.000 title abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 39
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 239000010931 gold Substances 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000005057 refrigeration Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000000862 absorption spectrum Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
Abstract
A metamaterial wave absorber with high reflection in solar spectrum and high absorption in middle infrared. The invention discloses a selective metamaterial wave absorber with high reflection at an ultraviolet visible band and high absorption at a middle infrared band, and relates to the technical field of functional optical metamaterials. The wave absorber is divided into two layers, wherein the upper layer is a silicon dioxide conical body (1) formed by etching an inverted triangular groove (3) on a silicon dioxide flat plate, and the lower layer is a gold film substrate (2). The depth of the inverted triangular groove is about 20μm~100μmThe width of the upper part of the silicon dioxide cone is about 1μm~3μmWidth of lower part of about 5μm~20μmAt an interval of about 0μm~3μm. The upper silicon dioxide cone and the lower metal substrate form a basic unit which periodically spreads on a two-dimensional plane vertical to the propagation of lightAnd opening. The wave absorber of the metamaterial is arranged at the ultraviolet and visible light wave band of 0.3μm~4μmHas high reflectivity in the middle infrared band 8μm~30μmThe invention has the advantages of simple structure, easy preparation, wide absorption band and good absorption effect, and can be applied to the fields of infrared detection, radiation refrigeration and the like.
Description
Technical Field
The invention relates to the field of functional optical metamaterial technology and application, in particular to a metamaterial wave absorber with high reflection at an ultraviolet visible solar spectrum waveband and high absorption at a middle infrared waveband.
Background
Along with the development of micro-nano scientific technology and manufacturing technology, the research of metamaterials is widely regarded, and the metamaterials are artificial composite structures and materials with extraordinary physical properties which natural materials do not have. It can break through the limit of natural law and form artificial structure material with special electromagnetic characteristic. By regulating the microstructure of the material, people can create a metamaterial with high absorption or high reflection on a specific wave band. In recent years, radiation refrigeration has attracted a great deal of attention in the field of energy saving as a passive, efficient and reproducible method for reducing refrigeration power consumption. The method for realizing radiation refrigeration is to highly reflect electromagnetic waves in the ultraviolet visible solar spectrum band and highly absorb electromagnetic waves in the mid-infrared band. Therefore, the metamaterial wave absorber with high reflection on ultraviolet visible solar spectrum band light and high absorption on electromagnetic waves in mid-infrared bands is designed, and the metamaterial wave absorber has great significance for development of radiation refrigeration technology. Meanwhile, the metamaterial structure body can also be used in the fields of sensor detection, nonlinear optics, electromagnetic stealth technology and the like.
At present, researchers have proposed some metamaterial wave-absorbing structures for radiation refrigeration, but these structures have various disadvantages, such as that the absorption bandwidth is not wide enough and the absorption bandwidth is narrow and not easy to adjust, for example, the structure is made of multiple layers of different materials stacked up, and the preparation is troublesome and costly. Aiming at the problems, the invention designs the metamaterial broadband wave absorber with a simple structure, only one material is etched, the preparation is simple, the reflectivity of the metamaterial broadband wave absorber in an ultraviolet-visible solar spectrum band is more than 90%, the absorptivity of the metamaterial wave absorber in a middle-infrared band is more than 90%, and the radiation refrigeration under the direct irradiation of the sun can be realized. The structure has robustness, and the change (increase or decrease) of the structure size in a certain range has little influence on the emission and absorption performance of the metamaterial wave absorber. The metamaterial absorber structure provided by the invention overcomes the problems of complex structure, narrow absorption bandwidth, poor absorption effect and difficult preparation in the prior art, and has wide application prospect.
Disclosure of Invention
For realizing high ultraviolet and visible light wave bandThe invention aims at reflection and high absorption in the middle infrared band, and the content of the invention is as follows: a metamaterial wave absorber with high reflection at an ultraviolet visible wave band and high absorption at a middle infrared wave band has a two-layer structure, wherein the upper layer is a silicon dioxide conical body (1), the lower layer is a gold film substrate (2), an inverted triangular groove (3) is etched on a silicon dioxide flat plate, and the thickness H of the silicon dioxide flat plate isSiO220-100 mu m, and the depth H of the inverted triangular groove (3)etch20 to 100 μm, and the silica cone (1) has an upper width w u1 to 3 μm, and a lower width wl5-20 μm at an interval of 0-3 μm, and a gold thin film substrate (2) having a thickness HAu＝0.05μm～5μm。
The thickness H of the silica plate can be varied within the above rangeSiO2The upper width w of the silicon dioxide cone (1)uThe width w of the lower part of the silicon dioxide cone (2)lSilicon dioxide conical body (1) period P, gold film substrate (2) film thickness HAuDepth H of inverted triangular groove (3)etchAnd the like, and high reflection of the ultraviolet visible light wave band and high absorption of the ultraviolet visible light wave band in the middle infrared wave band are also realized. The metal thin film substrate may be metal such as silver, copper, tungsten, or aluminum. The silicon dioxide material can be replaced by aluminum oxide, glass and other materials with low absorption of ultraviolet and visible light and high absorption of infrared wave band.
The thickness of the silicon dioxide flat plate of each cone (1) in the metamaterial structure, the depth, the upper width and the lower width of the inverted triangular grooves (3) and the interval period of the inverted triangular grooves can be changed within the range, the structural sizes of different cones can be slightly different, and the influence on the reflection, transmission and absorption performance of the metamaterial absorber is small.
The structure size of the invention is changed, such as enlargement or reduction, modification of a certain structural parameter, change of the period P, non-periodic structural change and the like, without changing the characteristics of high reflection in ultraviolet and visible light bands and high absorption in middle and infrared bands.
Compared with the prior art, the invention has the following remarkable advantages:
the upper part of the metamaterial wave absorber provided by the invention only uses the same material, and compared with the traditional multilayer complex structure, the metamaterial wave absorber provided by the invention greatly reduces the structural complexity, so that the metamaterial wave absorber is relatively simple to prepare, and has relatively good absorption and reflection effects.
The metamaterial wave absorber provided by the invention is made of conventional materials and is easy to realize.
The metamaterial wave absorber provided by the invention has robustness in structure, and the change (increase or decrease) of the structure size in a certain range has little influence on the emission and absorption performance of the metamaterial wave absorber.
Drawings
Fig. 1 is a top view (three-dimensional top view) of a three-dimensional structure of a metamaterial absorber according to the present invention.
Fig. 2 is a side view (two-dimensional side view) of a metamaterial absorber structure of the present invention.
FIG. 3 is a schematic diagram of an absorption spectrum (middle-sized absorption spectrum) of a metamaterial absorber structure of the present invention in example one.
FIG. 4 is a schematic diagram of an absorption spectrum (absorption spectrum in large size) of a metamaterial absorber structure in accordance with a second embodiment of the present invention.
Fig. 5 is a schematic diagram of an absorption spectrum (small-scale absorption spectrum) of the metamaterial absorber structure of the invention in the third embodiment.
FIG. 6 is a schematic view of an absorption spectrum of a metamaterial absorber structure according to the present invention at time four in an embodiment (an absorption spectrum of an alumina structure).
Detailed Description
The present invention will be further described with reference to the following detailed description and the accompanying drawings, but the present invention is not limited to the following embodiments. Those skilled in the art can readily modify the following examples and apply the general principles to other examples without inventive faculty. Therefore, it is intended that all such modifications and improvements within the scope of the invention be covered by the claims appended hereto.
Example one
Thickness H of silicon dioxide at parallel wave incidenceSiO250 mu ═ mThickness H of rice, gold film Au2 microns, period P8 microns, width w of the top of the silica u1 micron. The incident electromagnetic wave ranges from 0.3 microns to 40 microns. The absorption spectrum of the proposed metamaterial absorber is shown in fig. 3, and it can be seen that the reflectivity is greater than 0.9 at 0.3 to 4 microns and the absorptivity is greater than 0.9 at 8 to 30 microns.
Example two
Thickness H of silicon dioxide at parallel wave incidenceSiO2Thickness H of gold film of 100 μm Au3 microns, period P10 microns, width w of the top of the silica u1 micron. The incident electromagnetic wave ranges from 0.3 micron to 40 micron, and the parallel wave is incident. The absorption spectrum of the proposed metamaterial wave absorber is shown in fig. 4, and it can be seen that the reflectivity from 0.3 micron to 4 microns is also greater than 0.9, the absorptivity from 8 microns to 30 microns is also greater than 0.9, by changing the parameters of the structure size, the etching depth and the like of the metamaterial wave absorber, as long as the silicon dioxide flat plate is etched by the inverted triangular groove, the high reflection of the incident electromagnetic wave in the wavelength range from 0.3 micron to 4 microns and the high absorption of the electromagnetic wave in the wavelength range from 8 microns to 30 microns can be realized.
EXAMPLE III
Thickness H of silicon dioxide at parallel wave incidenceSiO2Thickness H of gold film of 20 μm Au2 microns, period P8 microns, width w of the top of the silica u1 micron. The incident electromagnetic wave ranges from 0.3 micron to 40 micron, and the parallel wave is incident. The absorption spectrum of the proposed metamaterial absorber is shown in fig. 5. It can be seen from this that, by reducing the structural size of the metamaterial absorber of the present invention to a certain range, the absorption of the long wavelength band of the electromagnetic wave is slightly affected, and the reflection of the short wavelength band is very slightly affected, so this example is used to illustrate that the absorption and reflection of the electromagnetic wave within a certain range can be achieved when the structural size of the proposed metamaterial absorber is changed. Changes in the dimensions of the metamaterial structures of the present invention, as well as modifications of other parameters, are also within the scope of the present invention.
Example four
Under parallel wave incidence, the silicon dioxide material is changed into aluminum oxide (Al)2O3) The thickness of the film is 50 microns, the gold film is replaced by a silver film, the thickness of the film is 2 microns, the period P is 8 microns, and the width w of the top of the aluminum oxide isu1 micron. The incident electromagnetic wave ranges from 0.3 micron to 40 micron, and the parallel wave is incident. The absorption spectrum of the proposed metamaterial absorber is shown in fig. 6, and it can be seen that the absorbance is less than 0.1 at 0.3 to 4 microns and greater than 0.9 at 8 to 26 microns.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A metamaterial absorber with high reflection in an ultraviolet visible band and high absorption in a middle infrared band, comprising: two-layer structure, the upper strata is silica conical body (1), and the lower floor is gold film substrate (2), its characterized in that: etching an inverted triangular trench (3) in a silicon dioxide plate having a thicknessH SiO2 =20μm~100μmDepth of the inverted triangular groove (3)H etch =20μm~100μmFor the silicon dioxide cone (1), its upper widthw u =1μm~3μmWidth of lower partw l =5μm~20μ mAt an interval of 0μm~3μmThickness of gold thin film substrate (2)H Au =0.05μm~5μm。
2. The metamaterial wave absorber with high reflection in the ultraviolet and visible light band and high absorption in the middle infrared band as claimed in claim 1, wherein: the thickness of the silicon dioxide flat plate can be changedH SiO2 Silica coneUpper width of the body (1)w u The width of the lower part of the silicon dioxide cone (2)w l Period of silica cone (1)PThickness of gold thin film substrate (2)H Au Depth of the inverted triangular groove (3)H etch And the like, and high reflection of the ultraviolet visible light wave band and high absorption of the ultraviolet visible light wave band in the middle infrared wave band are also realized.
3. The metamaterial wave absorber with high reflection in the ultraviolet and visible light band and high absorption in the middle infrared band as claimed in claim 1, wherein: the depth, the upper and lower width and the interval period of the silicon dioxide flat plate thickness inverted triangular grooves (3) of each cone (1) in the metamaterial structure can be changed within the range of claim 1, and the structural size of different cones can be slightly different.
4. The metamaterial wave absorber with high reflection in the ultraviolet and visible light band and high absorption in the middle infrared band as claimed in claim 1, wherein: the material of the metal substrate at the bottom of the silicon dioxide can be metal such as metal gold, silver, copper, tungsten, aluminum and the like, and the silicon dioxide material can be replaced by other materials such as aluminum oxide, glass and the like which have low absorption in ultraviolet and visible light and high absorption in infrared wave bands, and the improvement is protected by the invention.
5. The invention of claim 1, wherein the structural size of the metamaterial absorber is changed, such as enlarging or reducing, modifying a structural parameter, changing a periodPAnd the improvement of non-periodic structure change and the like are all protected by the invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910845724.9A CN111239881A (en) | 2019-09-09 | 2019-09-09 | Metamaterial wave absorber with high reflection in solar spectrum and high absorption in intermediate infrared |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910845724.9A CN111239881A (en) | 2019-09-09 | 2019-09-09 | Metamaterial wave absorber with high reflection in solar spectrum and high absorption in intermediate infrared |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111239881A true CN111239881A (en) | 2020-06-05 |
Family
ID=70879388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910845724.9A Pending CN111239881A (en) | 2019-09-09 | 2019-09-09 | Metamaterial wave absorber with high reflection in solar spectrum and high absorption in intermediate infrared |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111239881A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314849A (en) * | 2021-04-20 | 2021-08-27 | 上海海事大学 | Periodic unit of metamaterial broadband wave absorber and metamaterial broadband wave absorber |
| CN116774331A (en) * | 2023-08-24 | 2023-09-19 | 中国科学院长春光学精密机械与物理研究所 | Spectrally selective asymmetric heat radiator and method for making same |
| CN117471593A (en) * | 2023-12-28 | 2024-01-30 | 迈默智塔(无锡)科技有限公司 | Selective transmission diaphragm and selective transmission glass |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120170114A1 (en) * | 2011-01-04 | 2012-07-05 | Triton Systems, Inc. | Metamaterial filter |
| CN102798906A (en) * | 2012-09-11 | 2012-11-28 | 南京大学 | Double-broadband near infrared absorber |
| CN103367931A (en) * | 2013-07-05 | 2013-10-23 | 西北工业大学 | Infrared multi-wavelength absorber |
| CN107994353A (en) * | 2018-01-10 | 2018-05-04 | 中国计量大学 | A kind of broadband Meta Materials Terahertz wave absorbing device |
| CN108520903A (en) * | 2018-05-10 | 2018-09-11 | 江西师范大学 | A kind of Visible-to-Near InfaRed region broadband perfection absorber and preparation method thereof |
| CN108732663A (en) * | 2018-08-16 | 2018-11-02 | 苏州大学 | Wide-band bidirectional wide-angle absorbent structure and preparation method thereof |
| CN109581553A (en) * | 2019-01-10 | 2019-04-05 | 中国科学院光电技术研究所 | A kind of visible light wave range Meta Materials perfect absorber and its self-assembly preparation method thereof |
| CN208832834U (en) * | 2018-06-11 | 2019-05-07 | 宁波瑞凌节能环保创新与产业研究院 | A kind of space radiation cold plate |
| CN109968769A (en) * | 2019-03-29 | 2019-07-05 | 中国科学院上海技术物理研究所 | A kind of low-cost large-area Non-energy-consumption radiation refrigeration laminated film and preparation method |
| CN110187420A (en) * | 2019-06-04 | 2019-08-30 | 余姚市万邦电机有限公司 | A kind of two-band Meta Materials wave absorbing device and index sensor |
-
2019
- 2019-09-09 CN CN201910845724.9A patent/CN111239881A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120170114A1 (en) * | 2011-01-04 | 2012-07-05 | Triton Systems, Inc. | Metamaterial filter |
| CN102798906A (en) * | 2012-09-11 | 2012-11-28 | 南京大学 | Double-broadband near infrared absorber |
| CN103367931A (en) * | 2013-07-05 | 2013-10-23 | 西北工业大学 | Infrared multi-wavelength absorber |
| CN107994353A (en) * | 2018-01-10 | 2018-05-04 | 中国计量大学 | A kind of broadband Meta Materials Terahertz wave absorbing device |
| CN108520903A (en) * | 2018-05-10 | 2018-09-11 | 江西师范大学 | A kind of Visible-to-Near InfaRed region broadband perfection absorber and preparation method thereof |
| CN208832834U (en) * | 2018-06-11 | 2019-05-07 | 宁波瑞凌节能环保创新与产业研究院 | A kind of space radiation cold plate |
| CN108732663A (en) * | 2018-08-16 | 2018-11-02 | 苏州大学 | Wide-band bidirectional wide-angle absorbent structure and preparation method thereof |
| CN109581553A (en) * | 2019-01-10 | 2019-04-05 | 中国科学院光电技术研究所 | A kind of visible light wave range Meta Materials perfect absorber and its self-assembly preparation method thereof |
| CN109968769A (en) * | 2019-03-29 | 2019-07-05 | 中国科学院上海技术物理研究所 | A kind of low-cost large-area Non-energy-consumption radiation refrigeration laminated film and preparation method |
| CN110187420A (en) * | 2019-06-04 | 2019-08-30 | 余姚市万邦电机有限公司 | A kind of two-band Meta Materials wave absorbing device and index sensor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314849A (en) * | 2021-04-20 | 2021-08-27 | 上海海事大学 | Periodic unit of metamaterial broadband wave absorber and metamaterial broadband wave absorber |
| CN116774331A (en) * | 2023-08-24 | 2023-09-19 | 中国科学院长春光学精密机械与物理研究所 | Spectrally selective asymmetric heat radiator and method for making same |
| CN116774331B (en) * | 2023-08-24 | 2023-11-10 | 中国科学院长春光学精密机械与物理研究所 | Spectrally selective asymmetric heat radiator and method for making same |
| CN117471593A (en) * | 2023-12-28 | 2024-01-30 | 迈默智塔(无锡)科技有限公司 | Selective transmission diaphragm and selective transmission glass |
| CN117471593B (en) * | 2023-12-28 | 2024-04-02 | 迈默智塔(无锡)科技有限公司 | Selective transmission diaphragm and selective transmission glass |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111239881A (en) | Metamaterial wave absorber with high reflection in solar spectrum and high absorption in intermediate infrared | |
| CN110196464B (en) | Method for realizing ultra-wideband light absorption and composite microstructure | |
| Thouti et al. | Optical properties of Ag nanoparticle layers deposited on silicon substrates | |
| CN111552014B (en) | Horizontal MIM grid dot matrix plasmon absorber | |
| CN111273384B (en) | Ultra-wideband absorber of ultraviolet-visible light-near infrared band | |
| CN104656170A (en) | Apparatus for fully absorbing wide waveband light and preparation method for apparatus | |
| CN111338011B (en) | Method for realizing ultra-wideband light absorption enhancement by adopting composite microstructure | |
| CN105022106B (en) | The ultra wide band absorber and preparation method of a kind of visible near-infrared wave band | |
| US11275198B2 (en) | Terahertz metamaterial waveguide and device | |
| CN106483594A (en) | Colored filter and application based on the super surface of silicon and nanostructured metal film | |
| CN110716247A (en) | Metamaterial selective wave absorber with high reflection in visible light and high absorption in middle infrared | |
| CN108333653B (en) | Electromagnetic wave absorber based on refractory material | |
| CN104181622A (en) | Design method for large-bandwidth strong-absorption metamaterial near-infrared wave-absorbing material | |
| CN110687622B (en) | Polarization-adjustable spectrum dual-difference-response perfect optical wave absorber and preparation method thereof | |
| CN106054292A (en) | Thin film structure having selective absorption characteristics and preparation method thereof | |
| CN111082229A (en) | Terahertz broadband adjustable absorber based on single-ring graphene | |
| CN113075755A (en) | Light trapping structure based on LSPR effect and preparation method thereof | |
| CN111308588B (en) | Multi-band perfect absorber based on surface plasmons | |
| CN108375811A (en) | Optical absorber based on titanium nitride material | |
| CN107544103B (en) | Dual-band terahertz wave absorber based on graphene | |
| CN108333654A (en) | A kind of titanium material electromagnetic wave perfection absorber | |
| CN112822932A (en) | Dynamic adjustable dual-function device based on graphene and vanadium dioxide metamaterial | |
| CN211826580U (en) | Metamaterial selective wave absorber with high reflection in visible light and high absorption in middle infrared | |
| CN110444898A (en) | A kind of broadband transmission enhancing device and control method | |
| KR20140137912A (en) | Electromagnetic wave absorber and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200605 |
|
| WD01 | Invention patent application deemed withdrawn after publication |