CN106054292A - Thin film structure having selective absorption characteristics and preparation method thereof - Google Patents
Thin film structure having selective absorption characteristics and preparation method thereof Download PDFInfo
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- CN106054292A CN106054292A CN201610472957.5A CN201610472957A CN106054292A CN 106054292 A CN106054292 A CN 106054292A CN 201610472957 A CN201610472957 A CN 201610472957A CN 106054292 A CN106054292 A CN 106054292A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
Abstract
The invention discloses a thin film structure having selective absorption characteristics and a preparation method thereof. The thin film structure comprises a substrate; a first metal thin film arranged on the surface of the substrate; a dielectric thin film layer arranged on the surface of the side, away from the substrate, of the first metal thin film; a second metal thin film arranged on the surface of the side, away from the first metal thin film, of the dielectric thin film layer. The inventors have found that the thin film structure is a selective absorption structure having MIM waveguide characteristics, and through the calculation of the MIM waveguide characteristics, it is found that the central wavelength of the absorption peak of the thin film structure having the selective absorption characteristics can be changed by changing the thickness of the dielectric thin film layer, the half-wave bandwidth of the absorption peak of the thin film structure having the selective absorption characteristics can be changed by changing the thickness of the second metal thin film, and thereby the selective absorption characteristics of the thin film structure having the absorption characteristics can be changed by adjusting the thickness of the dielectric thin film layer and the second metal thin film.
Description
Technical field
The application relates to selecting absorption techniques field, has, more particularly, it relates to a kind of, the thin film selecting absorption characteristic
Structure and preparation method thereof.
Background technology
The selection of light absorb be mainly used in stealthy, heat emission, the field such as light shows, photovoltaic, solaode.Traditional
Selecting absorbing structure is all to utilize dyestuff or pigment that the absorption characteristic of certain wavelength prepared selective absorber part, but due to
The photofading characteristic of dyestuff or pigment itself, the selective absorber part utilizing dyestuff or pigment to prepare is easier to lose under light illumination
Select absorption function, therefore its less stable.
Along with the development of nano optoelectronics, surface plasma nanostructured provides and controls under a kind of nanoscale
The new model of action of light-matter interaction, the described nanostructured that can realize at present selecting to absorb mainly includes super material
Material, metal plasma nanostructured etc., but in order to obtain selecting absorption characteristic, the size of described nanostructured is often in light
The even deep sub-wavelength magnitude of wavelength magnitude, and owing to the requirement on machining accuracy of described nanostructured is higher, it is difficult to carry out big face
Long-pending preparation.
Therefore, need badly a kind of stability higher and can carry out prepared by large area there is the structure selecting absorption characteristic.
Summary of the invention
For solving above-mentioned technical problem, the invention provides a kind of membrane structure and preparation thereof having and selecting absorption characteristic
Method, to realize providing a kind of stability higher and can carrying out the mesh with the structure selecting absorption characteristic prepared by large area
's.
For realizing above-mentioned technical purpose, embodiments provide following technical scheme:
A kind of have the membrane structure selecting absorption characteristic, including:
Substrate；
It is positioned at the first metallic film of described substrate surface；
It is positioned at described first metallic film and deviates from the dielectric thin film layer of described substrate one side surface；
It is positioned at described dielectric thin film layer and deviates from the second metallic film of described first metallic film one side surface.
Preferably, also include:
It is positioned at described second metallic film and deviates from the protective layer of described dielectric thin film layer one side surface.
Preferably, described protective layer is silica membrane layer or silicon nitride film layer or titanium deoxid film layer or oxidation
Aluminum film layer or zinc sulfide film layer or zinc selenide film layer；
Described dielectric thin film layer is silica membrane layer or silicon nitride film layer or titanium deoxid film layer or aluminium oxide
Thin layer or zinc sulfide film layer or zinc selenide film layer.
Preferably, the span of the thickness of described protective layer is 5nm-10nm, including endpoint value.
Preferably, the span of the thickness of described dielectric thin film layer is 80nm-200nm, including endpoint value.
Preferably, described second metallic film is gold thin film or Ag films or aluminum thin film or Copper thin film.
Preferably, the span of the thickness of described first metallic film is 100nm ± 10nm, including endpoint value.
Preferably, at the bottom of described substrate is silicon dioxide substrate or polymethyl methacrylate base or polycarbonate substrate.
A kind of preparation method with the membrane structure selecting absorption characteristic, including:
Substrate is provided；
The first metallic film is prepared at described substrate surface；
Deviate from described substrate one side surface at described first metallic film and prepare dielectric thin film layer；
Deviate from described first metallic film side at described dielectric thin film layer and prepare the second metallic film.
Preferably, deviate from described first metallic film side at described dielectric thin film layer and prepare after the second metallic film also
Including:
Deviate from described dielectric thin film layer one side surface at described second metallic film and prepare protective layer.
From technique scheme it can be seen that embodiments provide a kind of thin film knot having and selecting absorption characteristic
Structure and preparation method thereof, wherein, described in have select absorption characteristic membrane structure include: substrate；It is positioned at described substrate surface
The first metallic film；It is positioned at described first metallic film deviate from the dielectric thin film layer of described substrate one side surface and be positioned at institute
State dielectric thin film layer and deviate from the second metallic film of described first metallic film one side surface.Inventor studies discovery said structure
Membrane structure be the selection absorbing structure with MIM guide properties, and by MIM guide properties calculate find, by changing
Become the thickness of described dielectric thin film layer can change described in there is the middle cardiac wave of absworption peak of the membrane structure selecting absorption characteristic
Long, by change the thickness of described second metallic film can change described in there is the absorption of the membrane structure selecting absorption characteristic
The half-wave bandwidth at peak, such that it is able to have described in the thickness change of the described dielectric thin film layer of adjustment and the second metallic film
The selection absorption characteristic of the membrane structure of absorption characteristic.
Further, due to the described membrane structure with absorption characteristic mainly by the first metal layer, the second metal level and
Dielectric thin film layer is constituted, and each layer stability is preferable, and therefore himself stability is higher；And described the first metal layer, the second metal
The preparation technology of layer and dielectric thin film layer is simple, and preparation cost is low, it is possible to achieve the non-lithography preparation of large area.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to
The accompanying drawing provided obtains other accompanying drawing.
A kind of structural representation with the membrane structure selecting absorption characteristic that the embodiment that Fig. 1 is the application provides
Figure；
A kind of structure with the membrane structure selecting absorption characteristic that another embodiment that Fig. 2 is the application provides is shown
It is intended to；
Fig. 3 is the absorption spectra line chart with the membrane structure selecting absorption characteristic with different medium thin film layer thickness；
Fig. 4 is the absorption spectra line chart with the membrane structure selecting absorption characteristic with different second metal layer thickness；
Fig. 5 (a) is described second metal level absorption spectra with the membrane structure selecting absorption characteristic when being gold thin film
Line chart；
Fig. 5 (b) is described second metal level absorption spectra with the membrane structure selecting absorption characteristic when being aluminum thin film
Line chart；
Fig. 5 (c) is described second metal level absorption spectra with the membrane structure selecting absorption characteristic when being Copper thin film
Line chart；
A kind of preparation flow with the membrane structure selecting absorption characteristic that the embodiment that Fig. 6 is the application provides
Schematic diagram；
A kind of preparation with the membrane structure selecting absorption characteristic that the preferred embodiment that Fig. 7 is the application provides
Schematic flow sheet；
A kind of preparation with the membrane structure selecting absorption characteristic that the specific embodiment that Fig. 8 is the application provides
Schematic flow sheet.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
The embodiment of the present application provides a kind of membrane structure having and selecting absorption characteristic, as it is shown in figure 1, include:
Substrate 100；
It is positioned at first metallic film 200 on described substrate 100 surface；
It is positioned at described first metallic film 200 and deviates from the dielectric thin film layer 300 of described substrate 100 1 side surface；
It is positioned at described dielectric thin film layer 300 and deviates from the second metallic film of described first metallic film 200 1 side surface
400。
It should be noted that the membrane structure that inventor studies discovery said structure is the selection with MIM guide properties
Absorbing structure, and calculate discovery by MIM guide properties, can change by changing the thickness of described dielectric thin film layer 300
The centre wavelength of the described absworption peak with the membrane structure selecting absorption characteristic, by changing described second metallic film 400
Thickness can change described in there is the half-wave bandwidth of absworption peak of the membrane structure selecting absorption characteristic, such that it is able to by adjusting
There is described in the thickness change of whole described dielectric thin film layer 300 and the second metallic film 400 membrane structure of absorption characteristic
Select absorption characteristic.
Further, due to the described membrane structure with absorption characteristic mainly by the first metal layer, the second metal level and
Dielectric thin film layer 300 is constituted, simple in construction, and each layer stability and efficiency of light absorption are preferable, therefore himself stability and
Efficiency of light absorption is higher；And the preparation technology of described the first metal layer, the second metal level and dielectric thin film layer 300 is simple, preparation
Low cost, it is possible to achieve the non-lithography preparation of large area.
The design process of the membrane structure described in also, it should be noted with absorption characteristic specifically includes that
A: select described first metallic film the 200, second metallic film according to required absworption peak Wavelength design scope
400, dielectric thin film layer 300 and the kind of substrate 100；
B: determine described first metallic film the 200, second metallic film according to MIM waveguide theory and emulation design method
400 and the thickness of dielectric thin film layer 300；
C: the selection that has obtaining having different absworption peak wavelength by adjusting the thickness of described dielectric thin film layer 300 absorbs
The membrane structure of characteristic；
D: by adjusting the tool that the thickness of described second metallic film 400 obtains having different absworption peak wavelength half-wave bandwidth
There is the membrane structure selecting absorption characteristic.
In step D, the thickness of described second metallic film 400 is adjusted mainly by changing described second metallic film
Stiffness of coupling between 400 and described dielectric thin film layer 300 realizes.
On the basis of above-described embodiment, in an embodiment of the application, as in figure 2 it is shown, described in have selection inhale
The membrane structure receiving characteristic also includes:
It is positioned at described second metallic film 400 and deviates from the protective layer 500 of described dielectric thin film layer 300 1 side surface.
It should be noted that described protective layer 500 is mainly for the protection of the second metal level, slow down the oxidation of the second metal level
Speed.
On the basis of above-described embodiment, in another embodiment of the application, described protective layer 500 is silicon dioxide
Thin layer or silicon nitride film layer or titanium deoxid film layer or aluminum oxide film layer or zinc sulfide film layer or zinc selenide film
Layer.
It should be noted that described protective layer 500 can pass through magnetron sputtering method or plasma reinforced chemical vapour deposition
Method is prepared, and concrete kind and the concrete preparation method of described protective layer 500 are not limited by the application, concrete regarding reality
Depending on situation.
On the basis of above-described embodiment, in another embodiment of the application, taking of the thickness of described protective layer 500
Value scope is 5nm-10nm, including endpoint value.The concrete value of the thickness of described protective layer 500 is not limited by the application,
Concrete depending on practical situation.
On the basis of above-described embodiment, in the further embodiment of the application, the thickness of described dielectric thin film layer 300
Span be 80nm-200nm, including endpoint value.
The concrete value of the thickness of described dielectric thin film layer 300 is not limited by the application, has with specific reference to described
Depending on selecting the centre wavelength of absworption peak of the membrane structure of absorption characteristic.
On the basis of above-described embodiment, in a preferred embodiment of the application, described second metallic film 400 is
Gold thin film or Ag films or aluminum thin film or Copper thin film.The concrete kind of described second metal level is not limited by the application, tool
Depending on stereoscopic practical situation.
When described second metal level be gold thin film preparation described in have select absorption characteristic membrane structure time, described in have
The centre wavelength of the absworption peak of the membrane structure of selection absorption characteristic optimum thickness in the range of visible light wave range is 25nm；When
Described second metal level be Ag films preparation described in have select absorption characteristic membrane structure time, described in have selection absorb spy
The centre wavelength of the absworption peak of the membrane structure of property optimum thickness in the range of visible light wave range is 30nm；When described second gold medal
Belong to layer be Copper thin film preparation described in have select absorption characteristic membrane structure time, described in have select absorption characteristic thin film knot
The centre wavelength of the absworption peak of structure optimum thickness in the range of visible light wave range is 20nm；When described second metal level is that aluminum is thin
When there is described in film preparation the membrane structure selecting absorption characteristic, described in there is the absworption peak of membrane structure selecting absorption characteristic
Centre wavelength optimum thickness in the range of visible light wave range be 5nm.
On the basis of above-described embodiment, in another preferred embodiment of the application, described first metallic film 200
The span of thickness be 100nm ± 10nm, including endpoint value.In other embodiments of the application, described first metal
The preferred value of the thickness of thin film 200 is 100nm.But the concrete value that the application is to the thickness of described first metallic film 200
Do not limit, concrete depending on practical situation.
On the basis of above-described embodiment, in an embodiment of the application, described substrate 100 can be silicon dioxide
At the bottom of substrate or polymethyl methacrylate base or polycarbonate substrate.The concrete kind of described substrate 100 is not done by the application
Limit, concrete depending on practical situation.
In order to better illustrate the selection described in the embodiment of the present application offer with the membrane structure selecting absorption characteristic
Absorption characteristic, below will be with a specific embodiment explanation.
In the present embodiment, described the first metal layer and the second metal level are silver metal layer, described dielectric thin film layer 300
And protective layer 500 is silicon dioxide layer.
Argent is respectively provided with higher reflectance (＞ 90%) at visible ray and infrared band.The refractive index of silicon dioxide
Being 1.46, the centre wavelength of the absworption peak with the membrane structure selecting absorption characteristic of preparation depends on as described medium thin
The thickness of the silicon dioxide layer of film layer 300.Thickness as the silicon dioxide layer of described protective layer 500 is chosen as 5nm；Described base
The end 100, is chosen as microscope slide (main material is silicon dioxide, and refractive index is 1.46), and its thickness is about 1mm.
Each layer thickness described in carrying out below with the membrane structure selecting absorption characteristic designs:
First of all for make incident illumination can high efficiency absorption by described the first metal layer and reduce transmission, therefore descend metal
The thickness of layer is chosen as 100nm.
Then according to multiple-beam interference characteristic, typically the thickness of described dielectric thin film layer 300 is tentatively chosen to be λ/4, its
Middle λ, for carrying light-absorbing wavelength, utilizes transmission matrix or FDTD time-domain-simulation to calculate and understands as described dielectric thin film layer
The thickness range of the silicon dioxide of 300 can cover whole visible light wave range when 80nm-200nm.As it is shown on figure 3, work as conduct
When the thickness of the silicon dioxide of described dielectric thin film layer 300 is respectively 100nm, 120nm, 140nm, 160nm and 180nm, corresponding
Described in have and select the absworption peak centre wavelength of membrane structure of absorption characteristic to be respectively 472nm, 525nm, 581nm, 637nm
And 695nm.
The selection of the thickness of described second metal level needs to consider transmission depth and the spillage of material of light simultaneously, selects standard
It is to balance between the local of resonant cavity and optical coupling；As shown in Figure 4, due to the impact of stiffness of coupling, there is the second different gold medals
The half-wave bandwidth with the membrane structure absworption peak selecting absorption characteristic belonging to layer thickness is different: the thickness of described second metal level
The biggest, the half-wave bandwidth of the corresponding absworption peak with the membrane structure selecting absorption characteristic is the least；Described second metal level
Thickness is the least, and the half-wave bandwidth of the corresponding absworption peak with the membrane structure selecting absorption characteristic is the biggest；
Owing to described protective layer 500 is mainly used to prevent the oxidation of described second metal level, if thickness is relatively big, described protection
In layer 500 reflection that causes of multiple-beam interference reduce described in there is the efficiency of light absorption of the membrane structure selecting absorption characteristic；
And if the thickness of described protective layer 500 is less, the requirement on machining accuracy of himself is higher and fragile.Therefore, by emulation
The span calculating the thickness learning optimal protective layer 500 is 5nm-10nm, including endpoint value；Excellent of the application
Selecting in embodiment, the preferred thickness of described protective layer 500 is 5nm.
In following several embodiments, we utilize different types of second metal level, and (gold thin film, aluminum thin film and copper are thin
Film) carry out contrast experiment.
Embodiment 1:
In the present embodiment, it is prepared for described in five groups that there is selection using the gold thin film of 25nm as described second metal level to inhale
Receive the membrane structure of characteristic, as shown in Fig. 5 (a), these the five groups dielectric thin film layer 300 with the membrane structure selecting absorption characteristic
Being respectively the silicon dioxide layer of 100nm, 120nm, 140nm, 160nm and 180nm, the centre wavelength of corresponding absworption peak is respectively
541nm, 581nm, 627nm, 678nm and 730nm.
Embodiment 2:
In the present embodiment, it is prepared for described in five groups that there is selection using the aluminum thin film of 5nm as described second metal level to inhale
Receive the membrane structure of characteristic, as shown in Fig. 5 (b), these the five groups dielectric thin film layer 300 with the membrane structure selecting absorption characteristic
Being respectively the silicon dioxide layer of 100nm, 120nm, 140nm, 160nm and 180nm, the centre wavelength of corresponding absworption peak is respectively
432nm, 494nm, 559nm, 622nm and 686nm.
Embodiment 3:
In the present embodiment, it is prepared for described in five groups that there is selection using the Copper thin film of 20nm as described second metal level to inhale
Receive the membrane structure of characteristic, as shown in Fig. 5 (c), these the five groups dielectric thin film layer 300 with the membrane structure selecting absorption characteristic
Being respectively the silicon dioxide layer of 100nm, 120nm, 140nm, 160nm and 180nm, the centre wavelength of corresponding absworption peak is respectively
526nm, 570nm, 617nm, 668nm and 722nm.
In sum, the embodiment of the present application provides a kind of membrane structure having and selecting absorption characteristic, including: substrate
100；It is positioned at first metallic film 200 on described substrate 100 surface；It is positioned at described first metallic film 200 and deviates from described substrate
The dielectric thin film layer 300 of 100 1 side surfaces and be positioned at described dielectric thin film layer 300 and deviate from described first metallic film 200 1
Second metallic film 400 of side surface.It is the choosing with MIM guide properties that inventor studies the membrane structure of discovery said structure
Select absorbing structure, and calculate discovery by MIM guide properties, can change by changing the thickness of described dielectric thin film layer 300
There is the centre wavelength of the absworption peak of the membrane structure selecting absorption characteristic, by changing described second metallic film described in change
The thickness of 400 has the half-wave bandwidth of absworption peak of the membrane structure selecting absorption characteristic described in can changing, such that it is able to logical
Cross adjust described dielectric thin film layer 300 and the second metallic film 400 thickness change described in have absorption characteristic thin film knot
The selection absorption characteristic of structure.
Further, due to the described membrane structure with absorption characteristic mainly by the first metal layer, the second metal level and
Dielectric thin film layer 300 is constituted, and each layer stability is preferable, and therefore himself stability is higher；And described the first metal layer, the second gold medal
The preparation technology belonging to layer and dielectric thin film layer 300 is simple, and preparation cost is low, it is possible to achieve the non-lithography preparation of large area.
Accordingly, the embodiment of the present application additionally provides the preparation method of a kind of membrane structure having and selecting absorption characteristic,
As shown in Figure 6, including:
S101: substrate 100 is provided；
S102: prepare the first metallic film 200 on described substrate 100 surface；
S103: deviate from described substrate 100 1 side surface at described first metallic film 200 and prepare dielectric thin film layer 300；
S104: deviate from described first metallic film 200 side at described dielectric thin film layer 300 and prepare the second metallic film
400。
It should be noted that the membrane structure that inventor studies discovery said structure is the selection with MIM guide properties
Absorbing structure, and calculate discovery by MIM guide properties, can change by changing the thickness of described dielectric thin film layer 300
The centre wavelength of the described absworption peak with the membrane structure selecting absorption characteristic, by changing described second metallic film 400
Thickness can change described in there is the half-wave bandwidth of absworption peak of the membrane structure selecting absorption characteristic, such that it is able to by adjusting
There is described in the thickness change of whole described dielectric thin film layer 300 and the second metallic film 400 membrane structure of absorption characteristic
Select absorption characteristic.
Further, due to the described membrane structure with absorption characteristic mainly by the first metal layer, the second metal level and
Dielectric thin film layer 300 is constituted, simple in construction, and each layer stability and efficiency of light absorption are preferable, therefore himself stability and
Efficiency of light absorption is higher；And the preparation technology of described the first metal layer, the second metal level and dielectric thin film layer 300 is simple, preparation
Low cost, it is possible to achieve the non-lithography preparation of large area.
The design process of the membrane structure described in also, it should be noted with absorption characteristic specifically includes that
A: select described first metallic film the 200, second metallic film according to required absworption peak Wavelength design scope
400, dielectric thin film layer 300 and the kind of substrate 100；
B: determine described first metallic film the 200, second metallic film according to MIM waveguide theory and emulation design method
400 and the thickness of dielectric thin film layer 300；
C: the selection that has obtaining having different absworption peak wavelength by adjusting the thickness of described dielectric thin film layer 300 absorbs
The membrane structure of characteristic；
D: by adjusting the tool that the thickness of described second metallic film 400 obtains having different absworption peak wavelength half-wave bandwidth
There is the membrane structure selecting absorption characteristic.
In step D, the thickness of described second metallic film 400 is adjusted mainly by changing described second metallic film
Stiffness of coupling between 400 and described dielectric thin film layer 300 realizes.
On the basis of above-described embodiment, in an embodiment of the application, as in figure 2 it is shown, described in have selection inhale
The membrane structure receiving characteristic also includes:
It is positioned at described second metallic film 400 and deviates from the protective layer 500 of described dielectric thin film layer 300 1 side surface.
It should be noted that described protective layer 500 is mainly for the protection of the second metal level, slow down the oxidation of the second metal level
Speed.
On the basis of above-described embodiment, in another embodiment of the application, described protective layer 500 is silicon dioxide
Thin layer or silicon nitride film layer or titanium deoxid film layer or aluminum oxide film layer or zinc sulfide film layer or zinc selenide film
Layer.
It should be noted that described protective layer 500 can pass through magnetron sputtering method or plasma reinforced chemical vapour deposition
Method is prepared, and concrete kind and the concrete preparation method of described protective layer 500 are not limited by the application, concrete regarding reality
Depending on situation.
On the basis of above-described embodiment, in another embodiment of the application, taking of the thickness of described protective layer 500
Value scope is 5nm-10nm, including endpoint value.The concrete value of the thickness of described protective layer 500 is not limited by the application,
Concrete depending on practical situation.
On the basis of above-described embodiment, in the further embodiment of the application, the thickness of described dielectric thin film layer 300
Span be 80nm-200nm, including endpoint value.
The concrete value of the thickness of described dielectric thin film layer 300 is not limited by the application, has with specific reference to described
Depending on selecting the centre wavelength of absworption peak of the membrane structure of absorption characteristic.
On the basis of above-described embodiment, in a preferred embodiment of the application, described second metallic film 400 is
Gold thin film or Ag films or aluminum thin film or Copper thin film.The concrete kind of described second metal level is not limited by the application, tool
Depending on stereoscopic practical situation.
When described second metal level be gold thin film preparation described in have select absorption characteristic membrane structure time, described in have
The centre wavelength of the absworption peak of the membrane structure of selection absorption characteristic optimum thickness in the range of visible light wave range is 25nm；When
Described second metal level be Ag films preparation described in have select absorption characteristic membrane structure time, described in have selection absorb spy
The centre wavelength of the absworption peak of the membrane structure of property optimum thickness in the range of visible light wave range is 30nm；When described second gold medal
Belong to layer be Copper thin film preparation described in have select absorption characteristic membrane structure time, described in have select absorption characteristic thin film knot
The centre wavelength of the absworption peak of structure optimum thickness in the range of visible light wave range is 20nm；When described second metal level is that aluminum is thin
When there is described in film preparation the membrane structure selecting absorption characteristic, described in there is the absworption peak of membrane structure selecting absorption characteristic
Centre wavelength optimum thickness in the range of visible light wave range be 5nm.
On the basis of above-described embodiment, in another preferred embodiment of the application, described first metallic film 200
The span of thickness be 100nm ± 10nm, including endpoint value.In other embodiments of the application, described first metal
The preferred value of the thickness of thin film 200 is 100nm.But the concrete value that the application is to the thickness of described first metallic film 200
Do not limit, concrete depending on practical situation.
On the basis of above-described embodiment, in an embodiment of the application, described substrate 100 can be silicon dioxide
At the bottom of substrate or polymethyl methacrylate base or polycarbonate substrate.The concrete kind of described substrate 100 is not done by the application
Limit, concrete depending on practical situation.
In order to better illustrate the selection described in the embodiment of the present application offer with the membrane structure selecting absorption characteristic
Absorption characteristic, below will be with a specific embodiment explanation.
In the present embodiment, described the first metal layer and the second metal level are silver metal layer, described dielectric thin film layer 300
And protective layer 500 is silicon dioxide layer.
Argent is respectively provided with higher reflectance (＞ 90%) at visible ray and infrared band.The refractive index of silicon dioxide
Being 1.46, the centre wavelength of the absworption peak with the membrane structure selecting absorption characteristic of preparation depends on as described medium thin
The thickness of the silicon dioxide layer of film layer 300.Thickness as the silicon dioxide layer of described protective layer 500 is chosen as 5nm；Described base
The end 100, is chosen as microscope slide (main material is silicon dioxide, and refractive index is 1.46), and its thickness is about 1mm.
Each layer thickness described in carrying out below with the membrane structure selecting absorption characteristic designs:
First of all for make incident illumination can high efficiency absorption by described the first metal layer and reduce transmission, therefore descend metal
The thickness of layer is chosen as 100nm.
Then according to multiple-beam interference characteristic, typically the thickness of described dielectric thin film layer 300 is tentatively chosen to be λ/4, its
Middle λ, for carrying light-absorbing wavelength, utilizes transmission matrix or FDTD time-domain-simulation to calculate and understands as described dielectric thin film layer
The thickness range of the silicon dioxide of 300 can cover whole visible light wave range when 80nm-200nm.As it is shown on figure 3, work as conduct
When the thickness of the silicon dioxide of described dielectric thin film layer 300 is respectively 100nm, 120nm, 140nm, 160nm and 180nm, corresponding
Described in have and select the absworption peak centre wavelength of membrane structure of absorption characteristic to be respectively 472nm, 525nm, 581nm, 637nm
And 695nm.
The selection of the thickness of described second metal level needs to consider transmission depth and the spillage of material of light simultaneously, selects standard
It is to balance between the local of resonant cavity and optical coupling；As shown in Figure 4, due to the impact of stiffness of coupling, there is the second different gold medals
The half-wave bandwidth with the membrane structure absworption peak selecting absorption characteristic belonging to layer thickness is different: the thickness of described second metal level
The biggest, the half-wave bandwidth of the corresponding absworption peak with the membrane structure selecting absorption characteristic is the least；Described second metal level
Thickness is the least, and the half-wave bandwidth of the corresponding absworption peak with the membrane structure selecting absorption characteristic is the biggest；
Owing to described protective layer 500 is mainly used to prevent the oxidation of described second metal level, if thickness is relatively big, described protection
In layer 500 reflection that causes of multiple-beam interference reduce described in there is the efficiency of light absorption of the membrane structure selecting absorption characteristic；
And if the thickness of described protective layer 500 is less, the requirement on machining accuracy of himself is higher and fragile.Therefore, by emulation
The span calculating the thickness learning optimal protective layer 500 is 5nm-10nm, including endpoint value；Excellent of the application
Selecting in embodiment, the preferred thickness of described protective layer 500 is 5nm.
In following several embodiments, we utilize different types of second metal level, and (gold thin film, aluminum thin film and copper are thin
Film) carry out contrast experiment.
Embodiment 1:
In the present embodiment, it is prepared for described in five groups that there is selection using the gold thin film of 25nm as described second metal level to inhale
Receive the membrane structure of characteristic, as shown in Fig. 5 (a), these the five groups dielectric thin film layer 300 with the membrane structure selecting absorption characteristic
Being respectively the silicon dioxide layer of 100nm, 120nm, 140nm, 160nm and 180nm, the centre wavelength of corresponding absworption peak is respectively
541nm, 581nm, 627nm, 678nm and 730nm.
Embodiment 2:
In the present embodiment, it is prepared for described in five groups that there is selection using the aluminum thin film of 5nm as described second metal level to inhale
Receive the membrane structure of characteristic, as shown in Fig. 5 (b), these the five groups dielectric thin film layer 300 with the membrane structure selecting absorption characteristic
Being respectively the silicon dioxide layer of 100nm, 120nm, 140nm, 160nm and 180nm, the centre wavelength of corresponding absworption peak is respectively
432nm, 494nm, 559nm, 622nm and 686nm.
Embodiment 3:
In the present embodiment, it is prepared for described in five groups that there is selection using the Copper thin film of 20nm as described second metal level to inhale
Receive the membrane structure of characteristic, as shown in Fig. 5 (c), these the five groups dielectric thin film layer 300 with the membrane structure selecting absorption characteristic
Being respectively the silicon dioxide layer of 100nm, 120nm, 140nm, 160nm and 180nm, the centre wavelength of corresponding absworption peak is respectively
526nm, 570nm, 617nm, 668nm and 722nm.
On the basis of above-described embodiment, in another embodiment of the application, as it is shown in fig. 7, thin at described medium
Film layer 300 deviates from after the second metallic film 400 is prepared in described first metallic film 200 side and also includes:
S105: deviate from described dielectric thin film layer 300 1 side surface at described second metallic film 400 and prepare protective layer 500.
It should be noted that described first metallic film 200, dielectric thin film layer the 300, second metallic film 400 and protection
Layer 500 all can use magnetron sputtering method or plasma reinforced chemical vapour deposition method to be prepared.It is used by the application
Concrete preparation method does not limit, concrete depending on practical situation.
One specific embodiment of the application provides the preparation method of a kind of membrane structure having and selecting absorption characteristic
Idiographic flow, as shown in Figure 8, including:
S201: utilize substrate 100 described in alcoholic solution ultrasonic cleaning；
S202: it is standby that the substrate 100 after cleaning utilizes nitrogen to dry up；
S203: utilize magnetron sputtering method to deposit the first metal layer on described substrate 100 surface；
S204: utilize plasma reinforced chemical vapour deposition method to deviate from described substrate 100 side at described the first metal layer
Surface one layer of dielectric thin film layer 300 of deposition；
S205: utilize magnetron sputtering method to deviate from described the first metal layer surface at described dielectric thin film layer 300 and deposit one layer
Protective layer 500.
In sum, the embodiment of the present application provides a kind of membrane structure and preparation side thereof having and selecting absorption characteristic
Method, wherein, described in have select absorption characteristic membrane structure include: substrate 100；It is positioned at the first of described substrate 100 surface
Metallic film 200；Be positioned at described first metallic film 200 deviate from described substrate 100 1 side surface dielectric thin film layer 300 and
It is positioned at described dielectric thin film layer 300 and deviates from the second metallic film 400 of described first metallic film 200 1 side surface.Inventor
Research finds that the membrane structure of said structure is the selection absorbing structure with MIM guide properties, and by MIM guide properties
Calculate find, by change described dielectric thin film layer 300 thickness can change described in have select absorption characteristic thin film tie
The centre wavelength of the absworption peak of structure, by change described second metallic film 400 thickness can change described in have selection inhale
Receive the half-wave bandwidth of the absworption peak of the membrane structure of characteristic, such that it is able to by adjusting described dielectric thin film layer 300 and second
There is described in the thickness change of metallic film 400 the selection absorption characteristic of the membrane structure of absorption characteristic.
Further, due to the described membrane structure with absorption characteristic mainly by the first metal layer, the second metal level and
Dielectric thin film layer 300 is constituted, and each layer stability is preferable, and therefore himself stability is higher；And described the first metal layer, the second gold medal
The preparation technology belonging to layer and dielectric thin film layer 300 is simple, and preparation cost is low, it is possible to achieve the non-lithography preparation of large area.
In this specification, each embodiment uses the mode gone forward one by one to describe, and what each embodiment stressed is and other
The difference of embodiment, between each embodiment, identical similar portion sees mutually.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple amendment to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can realize without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein and features of novelty phase one
The widest scope caused.
Claims (10)
1. one kind has the membrane structure selecting absorption characteristic, it is characterised in that including:
Substrate；
It is positioned at the first metallic film of described substrate surface；
It is positioned at described first metallic film and deviates from the dielectric thin film layer of described substrate one side surface；
It is positioned at described dielectric thin film layer and deviates from the second metallic film of described first metallic film one side surface.
The most according to claim 1 have the membrane structure selecting absorption characteristic, it is characterised in that also includes:
It is positioned at described second metallic film and deviates from the protective layer of described dielectric thin film layer one side surface.
The most according to claim 2 have the membrane structure selecting absorption characteristic, it is characterised in that described protective layer is two
Silicon oxide film layer or silicon nitride film layer or titanium deoxid film layer or aluminum oxide film layer or zinc sulfide film layer or selenizing
Zinc thin layer；
Described dielectric thin film layer is silica membrane layer or silicon nitride film layer or titanium deoxid film layer or aluminum oxide film
Layer or zinc sulfide film layer or zinc selenide film layer.
The most according to claim 2 have the membrane structure selecting absorption characteristic, it is characterised in that the thickness of described protective layer
The span of degree is 5nm-10nm, including endpoint value.
The most according to claim 1 have the membrane structure selecting absorption characteristic, it is characterised in that described dielectric thin film layer
The span of thickness be 80nm-200nm, including endpoint value.
The most according to claim 1 have the membrane structure selecting absorption characteristic, it is characterised in that described second metal foil
Film is gold thin film or Ag films or aluminum thin film or Copper thin film.
The most according to claim 1 have the membrane structure selecting absorption characteristic, it is characterised in that described first metal foil
The span of the thickness of film is 100nm ± 10nm, including endpoint value.
The most according to claim 1 have the membrane structure selecting absorption characteristic, it is characterised in that described substrate is dioxy
At the bottom of SiClx substrate or polymethyl methacrylate base or polycarbonate substrate.
9. a preparation method with the membrane structure selecting absorption characteristic, it is characterised in that including:
Substrate is provided；
The first metallic film is prepared at described substrate surface；
Deviate from described substrate one side surface at described first metallic film and prepare dielectric thin film layer；
Deviate from described first metallic film side at described dielectric thin film layer and prepare the second metallic film.
The preparation method with the membrane structure selecting absorption characteristic the most according to claim 9, it is characterised in that
Described dielectric thin film layer deviates from after the second metallic film is prepared in described first metallic film side and also includes:
Deviate from described dielectric thin film layer one side surface at described second metallic film and prepare protective layer.
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| US11454590B2 (en) | 2018-06-21 | 2022-09-27 | Lumus Ltd. | Measurement technique for refractive index inhomogeneity between plates of a lightguide optical element (LOE) |
| US11656472B2 (en) | 2017-10-22 | 2023-05-23 | Lumus Ltd. | Head-mounted augmented reality device employing an optical bench |
| US11729359B2 (en) | 2019-12-08 | 2023-08-15 | Lumus Ltd. | Optical systems with compact image projector |
| US11747137B2 (en) | 2020-11-18 | 2023-09-05 | Lumus Ltd. | Optical-based validation of orientations of internal facets |
| US11762169B2 (en) | 2017-12-03 | 2023-09-19 | Lumus Ltd. | Optical device alignment methods |
| US11927734B2 (en) | 2016-11-08 | 2024-03-12 | Lumus Ltd. | Light-guide device with optical cutoff edge and corresponding production methods |
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