CN111552014B - Horizontal MIM grid dot matrix plasmon absorber - Google Patents
Horizontal MIM grid dot matrix plasmon absorber Download PDFInfo
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- CN111552014B CN111552014B CN202010416222.7A CN202010416222A CN111552014B CN 111552014 B CN111552014 B CN 111552014B CN 202010416222 A CN202010416222 A CN 202010416222A CN 111552014 B CN111552014 B CN 111552014B
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Abstract
The invention relates to a transverse MIM grid lattice plasmon absorber which is composed of a dielectric substrate and a periodic metal nanoparticle array, wherein each group of metal nanoparticles is composed of two opposite gold cuboid blocks and a dielectric layer sandwiched between the two gold cuboid blocks. Incident light is TM plane wave with a magnetic field direction parallel to the plane of the medium substrate, and a certain included angle is formed between a wave vector k and the vertical direction, so that OLP-type lattice point array plasmons can be excited in the metal nanoparticle array, strong resonance coupling can be generated between adjacent nanometer metal units, and a specific absorption peak can be generated on the incident light under specific structural parameters and an incident angle. Compared with other array-based plasmon absorbers, the transverse MIM grid point array plasmon absorber has high quality factor and good tuning performance, and has good application prospect in the field of micro-nano optical integrated devices.
Description
(I) technical field
The invention belongs to the technical field of micro-nano optics, and relates to a transverse MIM lattice point array plasmon absorber which excites lattice point array plasmons in a metal nanoparticle array by obliquely incident TM light waves.
(II) background of the invention
Plasmonic nanostructures are receiving more and more attention because they can concentrate light in a small area, thus greatly enhancing the interaction of light and substances, and a single metal nanoparticle can support Localized Surface Plasmon Resonance (LSPR) with greater local field enhancement. However, the short plasma duration and low quality factor of LSPR limit the enhancement of the local field strength and light-to-species interaction. However, because of strong coupling between adjacent nanoparticles, lattice plasmons supported by the metallic nanoparticle array combine ideal photon and plasma properties, and have significant advantages in terms of suppression of radiation loss, high quality factor, significant field enhancement over large volumes, and the like. At present, the plasmon-based absorber has great potential in the aspects of antireflection and solar energy utilization, is a research object of a plurality of subject groups, has the advantages of small packaging size, low power consumption, easy integration and the like, and has very high application potential in the fields of photoelectric and thermoelectric products.
With the continuous progress and development of social science and technology, the requirements of people on development and utilization of high-tech products and green new energy are continuously improved, and simultaneously with the progress of nano-science and technology, the interconversion and application of photon energy, electricity and thermal radiation energy are main contents in the research field of optoelectronics, and a plasmon-based absorber provides a new approach for the conversion and the local field of photon energy, and becomes an important research field of micro-nano optics.
In recent years, plasmon absorbers have been proposed and studied, and many obvious advantages thereof have attracted more and more researchers to explore. The invention provides a novel transverse MIM grid point array plasmon absorber which has a higher quality factor compared with other plasmon-based absorbers and can easily realize static tuning. The transverse MIM lattice point array plasmon absorber only acts on planar light waves in a specific incidence direction during working, can be dynamically tuned along with the incidence direction of incident light, is single in material and strong in periodicity, and has the advantage of being simple to process.
Disclosure of the invention
The invention aims to design a transverse MIM grid point array plasmon absorber, the structure of a nano grid point array is further researched on an original medium substrate, and the structure can be found to be capable of effectively adjusting the performances of the transverse MIM grid point array plasmon absorber, such as the absorption rate, the bandwidth, the resonance wavelength and the like, by changing the parameters of the period of a metal nanoparticle array, the size of metal nanoparticles, the incident angle of oblique incident light and the like.
The invention aims to design a transverse MIM lattice point array plasmon absorber which mainly comprises a medium substrate and a periodic metal nanoparticle array, wherein each group of metal nanoparticles comprises two opposite gold cuboid blocks, a layer of medium is clamped between the two opposite gold cuboid blocks, the geometric parameters of each gold cuboid block are completely the same and are vertically erected on the upper surface of the medium substrate relative to the medium substrate, each group of metal nanoparticles is distributed on the upper surface of the medium substrate along the X axis and the Y axis which are horizontally vertical to each other in a certain period to form the metal nanoparticle array, the whole structure is placed in vacuum or air, incident light is a plane wave, a light source is arranged right above the whole structure, the incident direction has a certain included angle with the plane on the medium substrate, and the magnetic field direction of the incident light is parallel to the width of the two gold cuboid blocks in each group of metal nanoparticles, the electric field direction of the incident light and the upper surface of the medium substrate form a certain included angle, and the incident direction, i.e. the wave vector k, is in a specific oblique incident direction. The transmitted light is emitted from below the metal nanoparticle array, and the reflected light is emitted from above the metal nanoparticle array.
The height of the gold cuboid blocks in each group of metal nanoparticles can be in any line with the height of the working condition of the transverse MIM grid lattice plasmon absorber, and in order to obtain the optimal characteristic of the absorber, the height of the gold cuboid blocks is 260 nm.
The length of the gold cuboid blocks in each group of metal nanoparticles can be in any length meeting the working condition of the transverse MIM grid lattice plasmon absorber, and in order to obtain the optimal characteristic of the absorber, the length of the gold cuboid blocks is 180 nm.
The width of the gold cuboid blocks in each group of metal nanoparticles can be freely in accordance with the width of the working condition of the transverse MIM grid lattice plasmon absorber, and in order to obtain the optimal characteristic of the absorber, the width of the gold cuboid blocks is 80 nm.
The distance between the two gold cuboid blocks in each group of metal nanoparticles can be in any order according to the distance of the working conditions of the transverse MIM grid lattice plasmon absorber, and in order to obtain the optimal characteristics of the absorber, the distance between the two gold cuboid blocks is 50 nm.
The period of the metal nanoparticle array can be randomly in line with the period of the working condition of the transverse MIM grid lattice plasmon absorber, and in order to obtain the optimal characteristic of the absorber, the periods of the metal nanoparticle array parallel to the length direction and the width direction of two gold cuboid blocks in each group of metal nanoparticles are 450 nm.
The material of the dielectric substrate can be any material which meets the working conditions of the transverse MIM grid lattice plasmon absorber, and in order to obtain the optimal characteristics of the absorber, the dielectric substrate material with the refractive index n being 1.52 is adopted.
The included angle theta between the wave vector k of the incident plane light of the metal nanoparticle array in the YZ plane and the Z axis can be any angle according with the working condition of the transverse MIM grid point array plasmon absorber, and in order to obtain the optimal characteristic of the absorber, the included angle theta between the wave vector k of the incident plane light in the YZ plane and the Z axis is 15 degrees.
The dielectric layer between the two gold cuboid blocks in each metal nanoparticle can be any dielectric material meeting the working conditions of the transverse MIM grid lattice plasmon absorber, and in order to obtain the optimal characteristics of the absorber, air is used as the dielectric material.
Compared with the existing plasmon absorber, the invention has the advantages that: 1. the plane light wave incident direction and the upper surface of the medium substrate form a certain included angle, the magnetic field direction of the incident light is parallel to the width of two cuboid gold blocks in each group of metal nano particles, the electric field direction of the incident light and the upper surface of the medium substrate form a section of included angle, namely, the incident plane light wave is a TM wave, so that a transverse polarization electric field and a vertical polarization electric field perpendicular to the upper surface of the medium substrate exist in the metal nano particle array, a stronger local electric field enhancement is generated on the surfaces of the medium and the metal in each group of metal nano particles, and a strong coupling effect is realized between each adjacent group of metal nano particles, so that stronger plasmon resonance is realized to obtain higher quality factors and absorption coefficients. 2. The resonance wavelength, bandwidth, absorption rate and quality factor can be statically changed by changing the structural parameters of the gold cuboid block and the period of the metal nanoparticle array. 3. By changing the direction of an electric field (incident angle) of incident plane light, the resonance wavelength, the bandwidth, the absorption rate, and the quality factor can be dynamically changed. 4. Compared with other plasmon absorbers, the transverse MIM grid lattice plasmon absorber has the characteristic that the resonance wavelength can be flexibly adjusted from visible light to near-infrared wave bands. 5. Because the metal nanoparticles have certain periodicity in the X-axis and Y-axis directions, each group of metal nanoparticles has a simple structure and also has the characteristic of easy processing.
(IV) description of the drawings
Fig. 1 is a schematic three-dimensional structure diagram of the transverse MIM grid lattice plasmon absorber.
Fig. 2 is a schematic diagram of a two-dimensional structure XZ surface of each group of metal nanoparticles of the transverse MIM lattice plasmon absorber.
Fig. 3 is a schematic view of the two-dimensional structure YZ plane of each set of metal nanoparticles of the present lateral MIM lattice plasmonic absorber.
Fig. 4 is a schematic XY-plane diagram of a two-dimensional structure of each group of metal nanoparticles of the present transverse MIM lattice plasmon absorber.
Fig. 5 is three spectrograms of reflection, transmission and absorption obtained when the transverse MIM lattice point array plasmon absorber works optimally.
Fig. 6 is an absorption spectrum of the present transverse MIM lattice plasmon absorber obtained when the height h of each group of metal nanoparticles varies within a range of 230nm to 260 nm.
Fig. 7 is an absorption spectrum of the transverse MIM lattice point plasmon absorber obtained when the angle θ between the wave vector k of the incident plane light in the YZ plane and the Z axis is adjusted within the range of 10 ° to 25 °.
Fig. 8 is an absorption spectrum of the transverse MIM lattice point array plasmon absorber obtained when the period D of the metal nanoparticle array parallel to the two gold rectangular blocks in each set of metal nanoparticles in the longitudinal direction and the width direction is changed within the range of 430nm to 460 nm.
(V) detailed description of the preferred embodiments
The present invention will be further explained with reference to the drawings and the present embodiment.
Fig. 1 is a schematic three-dimensional structure diagram of the transverse MIM grid lattice plasmon absorber. Comprising a dielectric substrate 2 having a refractive index n of 1.52, two gold cuboid blocks opposing each other with a layer of dielectric (air) sandwiched therebetween, each set of metal nanoparticles 1, the two gold cuboid blocks having a length parallel to the Y-axis and a width parallel to the X-axis. Each group of metal nano particles are distributed on the plane of the medium substrate along the X axis and the Y axis in a certain period to form a metal nano particle array, and the thickness of the medium substrate meets the working condition. The incident light is a plane wave, the wave vector k is in a YZ plane, the included angle between the incident direction and the Z axis is theta, the polarization direction (electric field direction) of the incident light is perpendicular to the wave vector k and is in the YZ plane, and the magnetic field direction is parallel to the X axis.
Fig. 2 is a schematic view of an XZ plane of a two-dimensional structure of each group of metal nanoparticles of the transverse MIM lattice plasmon absorber, where the width W of two gold cuboid blocks in each group of metal nanoparticles is 80nm, the relative distance m between the two gold cuboid blocks is 50nm, a dielectric layer sandwiched between the two gold cuboid blocks is air, the period of each group of metal nanoparticles arranged above a dielectric substrate along the X axis direction is 450nm, and the entire structure is vertically arranged on the upper surface of the dielectric substrate.
Fig. 3 is a schematic diagram of a two-dimensional structure YZ plane of each set of metal nanoparticles of the present lateral MIM lattice plasmon absorber, operating optimally, where the period over which each set of metal nanoparticles is arranged along the Y-axis direction over the dielectric substrate is T-D-450 nm, and the height h of two gold cuboid blocks in each set of metal nanoparticles is 260 nm.
Fig. 4 is a schematic XY-plane view of a two-dimensional structure of each group of metal nanoparticles of the present transverse MIM lattice plasmon absorber, where the length a of two rectangular gold blocks in each group of metal nanoparticles is 180nm when working optimally.
When the invention works: the polarization direction (electric field direction) of incident plane light waves is in a YZ plane, the magnetic field direction is parallel to an X axis, the included angle between the incident direction and the Z axis is theta, the optimal degree of theta is 15 degrees, an electric field parallel to the Z axis is generated in the metal nanoparticle array, accordingly, grid point array plasmons in an OLP mode can be excited in the metal nanoparticle array, strong coupling resonance can be generated between adjacent metal nanoparticles, a specific absorption peak can be generated on the incident light under specific structural parameters and incident angles, and the quality factor is higher than that of other plasmon absorbers based on periodic arrays. The shift of the absorption peak can be changed by changing the structural parameters of the gold cuboid block and the period of the metal nanoparticle array, so that the static tuning is realized, and the shift of the absorption peak can be changed by changing the incident angle of the planar light wave, so that the dynamic tuning is realized. Fig. 5 is a spectrogram when the transverse MIM lattice plasmonic absorber works optimally, where the abscissa in the spectrogram represents the incident wavelength of planar light, the ordinate represents the reflection coefficient, transmission coefficient, and absorption coefficient of the incident planar light, and the three curves represent the reflection spectral line (refiectance), transmission spectral line (transmittince), and absorption spectral line (Absorbance) of the transverse MIM lattice plasmonic absorber for the incident planar light, respectively, and the relationship between the three curves is a ═ 1-T-R. As can be seen from absorption spectral lines, the absorption peak of the transverse MIM grid lattice plasmon absorber has a very narrow bandwidth, and the absorption coefficient of the highest peak value is as high as 0.88, so that the transverse MIM grid lattice plasmon absorber has a very high quality factor.
The working idea of the invention is as follows: the unfolding operation is carried out under the condition that the structural parameters are fixed and initial values. The absorption spectrum results obtained when the height h of the gold cuboid blocks in each group of metal nanoparticles is changed within the range of 230nm to 260nm are shown in fig. 6; when the included angle theta between the incident plane light wave, i.e. the wave vector k, and the Z axis is adjusted within the range of 10-25 degrees, the obtained absorption spectrum result is shown in fig. 7; ③ when the period D-T of the metal nanoparticle array along the X-axis and the Y-axis was varied in the range of 430nm to 460nm, the resulting absorption spectrum was as shown in fig. 8.
With reference to this embodiment, the following results are obtained through simulation verification of the transverse MIM lattice plasmon absorber:
fig. 6 is an absorption spectrum when the height h of the gold cuboid block in each set of metal nanoparticles is varied in the range of 230nm to 260 nm. The abscissa in the figure represents the incident wavelength of the planar light, and the ordinate represents the absorption coefficient, also called absorbance, of the incident planar light wave, and it can be seen that four different absorption spectrum curves are respectively the results of simulation of different heights of the gold cuboid blocks in each group of metal nanoparticles, and the heights h are respectively 230nm, 240nm, 250nm and 260 nm. The results in the figure show that with the increase of the height h, the absorption peak value of the transverse MIM grid lattice plasmon absorber gradually increases, the absorption peak gradually moves in a red mode, and the absorption coefficient in the absorption passband gradually decreases, so that the performance of the transverse MIM grid lattice plasmon absorber gradually increases with the increase of the heights of two gold cuboid blocks in the range of 230nm to 260nm, the absorption coefficient of the peak value gradually increases from 0.76 to 0.88, the resonance peak wavelength gradually increases from 684nm to 693nm, and the transverse MIM grid lattice plasmon absorber has good static tuning characteristics.
Fig. 7 is an absorption spectrum of the transverse MIM lattice plasmon absorber obtained when the included angle θ between the wave vector k of the incident plane light wave in the YZ plane and the Z axis is adjusted within the range of 10 ° to 25 °. The abscissa and ordinate in the figure represent the same as in fig. 6. Four absorption spectral lines obtained through simulation of four different included angles of a wave vector k and a Z axis can be found, the absorption peak of the transverse MIM grid point array plasmon absorber gradually shifts blue along with the increase of an incident included angle theta, the absorption peak of the transverse MIM grid point array plasmon absorber gradually increases and then decreases along with the increase of the incident included angle theta, the absorption peak reaches a maximum value at about 15 degrees, the absorption peak of the transverse MIM grid point array plasmon absorber gradually narrows and then widens along with the increase of the incident included angle theta, the absorption peak reaches a narrowest at about 15 degrees, therefore, the absorption peak has high quality factor and absorption coefficient when the incident angle theta of a plane light wave is 15 degrees, when the included angle theta of the wave vector k of the incident plane light wave and the Z axis is changed within the range of 10-25 degrees, the resonance peak wavelength is gradually reduced from 702nm to 673nm, and therefore, the shift of the absorption peak can be adjusted very flexibly, have non-ultra-good dynamic tuning characteristics.
Fig. 8 is an absorption spectrum of the present lateral MIM lattice plasmon absorber obtained when the period D ═ T ═ 430nm to 460nm of the metal nanoparticle array along the X axis and the Y axis is changed. The abscissa and ordinate in the figure represent the same as in fig. 6. The four absorption spectral line results of the transverse MIM lattice plasmon absorber obtained by adjusting the period of the metal nanoparticle array can find that the absorption peak of the transverse MIM lattice plasmon absorber gradually shifts red with the increase of the period in the range of D-T-430 nm-460 nm, and the wavelength of the resonance peak gradually increases from 664nm to 708nm, which shows that the static tuning of the resonance wavelength can be flexibly realized by changing the period of the metal nanoparticle array. And with the increase of the period, the absorption peak value of the transverse MIM lattice plasmon absorber is gradually increased, the peak values at the periods D and T of 450nm and 460nm are basically equal, but the absorption coefficient in the absorption pass band is better inhibited and reduced when the period D is 450nm, so that the performance of the transverse MIM lattice plasmon absorber is optimal when the period D is 450 nm.
The above embodiments are merely illustrative of the technical solutions and purposes of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the scope of the disclosure of the present invention should be included in the protection scope of the present invention for those skilled in the art.
Claims (2)
1. A transverse MIM lattice point array plasmon absorber comprises a medium substrate and a periodic metal nanoparticle array, wherein metal nanoparticles are formed by two opposite gold cuboid blocks into a group, the two opposite gold cuboid blocks are vertically erected on the upper surface of the medium substrate relative to the medium substrate, a layer of medium is sandwiched between the two opposite gold cuboid blocks, each group of metal nanoparticles are periodically distributed on the upper surface of the substrate along mutually perpendicular horizontal X-axis and Y-axis to form the metal nanoparticle array, incident light is a plane wave, a light source is arranged right above the whole structure and obliquely incident on the plane of the medium substrate, the incident light wave is a TM wave with a magnetic field direction parallel to the plane of the medium substrate, transmitted light is emitted from the lower part of the metal nanoparticle array, reflected light is emitted from the upper part of the metal nanoparticle array, and the whole structure works in a vacuum or air medium environment; each group of metal nano-particles consists of two opposite gold cuboid blocks and a dielectric layer sandwiched between the two opposite gold cuboid blocks, and the two opposite gold cuboid blocks have the same geometric dimension; each group of metal nano-particles vertically erected on the upper surface of the dielectric substrate has an arrangement period D of 300-700 nm along the length direction of the gold cuboid block and an arrangement period T of 300-700 nm along the width direction of the gold cuboid block; the height h of the gold cuboid blocks in each group of metal nanoparticles is between 150nm and 300nm, the width W is between 20nm and 100nm, the length a is between 100nm and 300nm, and the distance m between two opposite gold cuboid blocks is between 20nm and 150 nm.
2. The lateral MIM lattice plasmonic absorber of claim 1, wherein: the incident light is TM plane light wave, the magnetic field direction of the incident light is parallel to the width direction of the two gold cuboid blocks in each group of metal nano particles, and the included angle theta between the wave vector k of the incident plane light wave in the YZ plane and the Z axis is between 1 and 60 degrees.
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| CN114296185B (en) * | 2022-02-14 | 2024-05-31 | 西北工业大学 | Photonic device structure integrating micro-nano particles and optical waveguide |
| CN114937713B (en) * | 2022-05-18 | 2023-01-31 | 华南师范大学 | Plasmon mid-infrared linearly polarized light narrow-band perfect absorption super-surface device |
| CN116953828B (en) * | 2023-09-12 | 2024-03-12 | 之江实验室 | Multiband absorber and design method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006330105A (en) * | 2005-05-23 | 2006-12-07 | Ricoh Co Ltd | Polarization control element and polarization control method of polarization control element |
| CN103076647A (en) * | 2013-01-15 | 2013-05-01 | 西南交通大学 | Surface plasmon polariton type flat channel filter based on metal-insulator-metal structure |
| CN104064620A (en) * | 2014-06-03 | 2014-09-24 | 苏州大学 | Surface plasmon polariton-enhanced photoelectric detector based on MIM (Metal Injection Molding) structure |
| WO2015011009A1 (en) * | 2013-07-24 | 2015-01-29 | Eth Zurich | Thin film broadband plasmonic absorber |
| CN105738990A (en) * | 2016-04-29 | 2016-07-06 | 桂林电子科技大学 | Plasmon waveguide filter with high transmission characteristic |
| CN109100331A (en) * | 2018-07-02 | 2018-12-28 | 桂林电子科技大学 | A kind of metallic hole array phasmon fibre optical sensor of regular hexagon lattice structure |
| CN110441843A (en) * | 2019-08-14 | 2019-11-12 | 深圳先进技术研究院 | A kind of optical device based on the resonance of surface phasmon lattice point |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2959352B1 (en) * | 2010-04-23 | 2014-02-21 | Centre Nat Rech Scient | ABSORBENT NANOMETRIC STRUCTURE OF ASYMMETRIC MIM TYPE AND METHOD OF MAKING SUCH A STRUCTURE |
| WO2011139785A2 (en) * | 2010-04-27 | 2011-11-10 | The Regents Of The University Of Michigan | Display device having plasmonic color filters and photovoltaic capabilities |
-
2020
- 2020-05-17 CN CN202010416222.7A patent/CN111552014B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006330105A (en) * | 2005-05-23 | 2006-12-07 | Ricoh Co Ltd | Polarization control element and polarization control method of polarization control element |
| CN103076647A (en) * | 2013-01-15 | 2013-05-01 | 西南交通大学 | Surface plasmon polariton type flat channel filter based on metal-insulator-metal structure |
| WO2015011009A1 (en) * | 2013-07-24 | 2015-01-29 | Eth Zurich | Thin film broadband plasmonic absorber |
| CN104064620A (en) * | 2014-06-03 | 2014-09-24 | 苏州大学 | Surface plasmon polariton-enhanced photoelectric detector based on MIM (Metal Injection Molding) structure |
| CN105738990A (en) * | 2016-04-29 | 2016-07-06 | 桂林电子科技大学 | Plasmon waveguide filter with high transmission characteristic |
| CN109100331A (en) * | 2018-07-02 | 2018-12-28 | 桂林电子科技大学 | A kind of metallic hole array phasmon fibre optical sensor of regular hexagon lattice structure |
| CN110441843A (en) * | 2019-08-14 | 2019-11-12 | 深圳先进技术研究院 | A kind of optical device based on the resonance of surface phasmon lattice point |
Non-Patent Citations (5)
| Title |
|---|
| A highly efficient surface plasmon polaritons excitation achieved with a metal-coupled metal-insulator-metal waveguide;Hongyan Yang等;《AIP Advances》;20141205;第4卷;127114-1至6 * |
| Localized and nonlocalized plasmon resonance enhanced light absorption in metal-insulator-metal nanostructures;Wongyu Kim等;《Journal of the Optical Society of America B》;20150721;第32卷(第8期);1686-1692 * |
| MIM波导中法诺谐振和模式分裂特性研究;殷俊;《中国优秀硕士学位论文全文数据库 基础科学辑》;20200115(第1期);全文 * |
| 基于H形金属狭缝阵列结构双共振谷折射率传感特性;肖功利 等;《半导体光电》;20190430;第40卷(第2期);220-225 * |
| 金属-介质-金属型纳米波导光栅的滤波特性与结构优化;高兴宇 等;《桂林电子科技大学学报》;20191231;第39卷(第6期);478-482 * |
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