CN110716247A - Metamaterial selective wave absorber with high reflection in visible light and high absorption in middle infrared - Google Patents

Metamaterial selective wave absorber with high reflection in visible light and high absorption in middle infrared Download PDF

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CN110716247A
CN110716247A CN201911028766.XA CN201911028766A CN110716247A CN 110716247 A CN110716247 A CN 110716247A CN 201911028766 A CN201911028766 A CN 201911028766A CN 110716247 A CN110716247 A CN 110716247A
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silicon dioxide
metamaterial
absorption
width
wave absorber
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李玉涟
李林植
郭力
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Shanghai Maritime University
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Shanghai Maritime University
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
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Abstract

The invention discloses a selective metamaterial wave absorber with high reflection characteristic in a visible light band and high absorption characteristic in a middle infrared band, and relates to the technical field of functional optical metamaterials. The wave absorbing body is divided into three layers, wherein the upper layer is a silicon dioxide pyramid body (1), the middle layer is a silicon dioxide film (2), and the lower layer is a metal film substrate (3). The upper silicon dioxide pyramid body (1), the middle silicon dioxide film (2) and the lower metal film substrate (3) form a basic unit, and the basic unit is distributed in an array period on an x-y horizontal plane. The reflectivity of the metamaterial wave absorber at a visible light waveband of 0.6-4.5 microns is larger than 0.9, and the absorptivity of the metamaterial wave absorber at a mid-infrared waveband of 8-30 microns is larger than 0.9.

Description

Metamaterial selective wave absorber with high reflection in visible light and high absorption in middle infrared
Technical Field
The invention relates to the technical field of functional optical metamaterials and application thereof, in particular to a selective wave absorber of a metamaterial, which has high reflection characteristic in a visible light band and high absorption characteristic in a middle infrared band.
Background
A metamaterial is an artificial composite structure and material with extraordinary physical properties that natural materials do not have. It can break the limit of natural material to form artificial structure material with special electromagnetic characteristic. By regulating the microstructure of the material, people can create a metamaterial structure with high absorption or high reflection for a specific wave band. The metamaterial can be applied to the electromagnetic field, the optical field, the acoustic theory and the thermal theory at present, and the industries comprise the communication industry, the medical industry, the aviation industry, the military industry and the integrated circuit board (IC) industry, such as infrared radars, wave-absorbing materials, textile coatings and the like. In recent years, radiation refrigeration has attracted wide attention in the field of energy conservation as a passive, efficient and reproducible method for reducing energy consumption. The principle of realizing radiation refrigeration can be simplified into high reflection of electromagnetic waves in visible light bands and high absorption of electromagnetic waves in mid-infrared bands. Therefore, the metamaterial wave absorber with high reflection on visible light and high absorption on electromagnetic waves in mid-infrared bands is designed, and the metamaterial wave absorber has great significance for development of radiation refrigeration technology. Meanwhile, the metamaterial structure body can also be used in the fields of sensor detection, nonlinear optics, electromagnetic stealth technology and the like.
At present, relevant researchers have proposed many wave-absorbing structures of metamaterials, but these structures have some disadvantages: tunable broadband absorption cannot be realized, or the absorption bandwidth is not easy to adjust, or the proposed structure is formed by stacking multiple layers of different materials, and the preparation is complex and the cost is high. Aiming at the problems, the invention designs the metamaterial broadband wave absorber with a simple structure, only one material is etched, the preparation is simple, the economy is considerable, the ultra-wideband absorption that the reflectance in a visible light wave band is more than 90 percent and the absorptivity in a middle infrared wave band is more than 90 percent is realized, and the radiation cooling under the direct irradiation of the sun can be realized. The structure has robustness, the change (increase or decrease) of the structure size in a certain range has little influence on the emission and absorption performance of the metamaterial wave absorber, and the requirement on the process is reduced.
The metamaterial wave absorber structure provided by the invention overcomes the problems of complex structure, narrow absorption bandwidth, poor absorption effect and difficult preparation in the prior art, and has wide application prospect.
Disclosure of Invention
In order to realize the purposes of high reflection in a visible light wave band and high absorption in a middle infrared wave band, the invention comprises the following contents:
a three-dimensional metamaterial selective wave absorber with high reflection at a visible light band and high absorption at a middle infrared band is divided into three layers, wherein the upper layer is a silicon dioxide pyramid body (1), the middle layer is a silicon dioxide film (2), and the lower layer is a metal film substrate (3). The upper silicon dioxide pyramid body (1), the middle silicon dioxide film (2) and the lower metal film substrate (3) form a basic unit, the basic unit is distributed in an array period on an x-y horizontal plane, and a three-dimensional structure top view and a schematic diagram of the basic unit are shown in figure 1. Wherein the thickness of the silicon dioxide pyramid body (1)
Figure BDA0002249174280000021
Width w of its top in x directionux1-4 μm, width w in y directionuy1-4 μm, and a width w of the bottom in the x-direction lx5 to 20 μm, and a width w in the y directionly5-20 μm, the interval i between the silica pyramids is 0-5 μm, and the thickness h of the silica film (2)s0 to 40 μm, and a metal thin film substrate (3) having a film thickness hAuThe respective structural parameters are indicated at corresponding positions in fig. 1 and 2, where the respective structural parameters are 0.05 to 5 μm. Within the range, the height of the silicon dioxide pyramid body (1) is changed
Figure BDA0002249174280000022
Width w of the topuxAnd wuyWidth of bottom wlxAnd wlyChanging the interval i between the silicon dioxide pyramids (1) and the thickness h of the silicon dioxide film (2)sChanging the film thickness h of the metal film substrate (3)AuAnd the like, high reflection in a visible light band and high absorption in a middle infrared band can be realized.
The material of the metal film substrate (3) can be metal such as metal gold, silver, copper, tungsten, aluminum and the like, and the materials of the silicon dioxide pyramid body (1) and the silicon dioxide film (2) can be replaced by other materials such as aluminum oxide, glass and the like which have low absorption in visible light and high absorption in infrared wave band.
Changing the thickness of each silicon dioxide pyramid body (1) in the designed metamaterial structureDegree of rotationWidth w of the topuxAnd wuyWidth of bottom wlxAnd wlyAnd the parameters such as the interval i and the like, and the structural sizes of different silicon dioxide pyramids (1) can be slightly different, so that the influence on the reflection, transmission and absorption performances of the metamaterial wave absorber is small.
The spectral absorption range of the metamaterial structure designed by the invention is as follows: the reflectance in the visible wavelength range of 0.6 to 4.5 microns is greater than 0.9 and the absorbance in the mid-infrared range of 8 to 30 microns is greater than 0.9.
Compared with the prior art, the invention has the following remarkable advantages:
1. the upper layer and the middle layer of the metamaterial wave absorber provided by the invention only use the same material, and compared with the traditional multilayer complex structure, the metamaterial wave absorber provided by the invention has the advantages that the complexity of the structure is reduced to a great extent, so that the preparation process is relatively simple, and meanwhile, the better absorption and reflection effects are kept.
2. Compared with the structure proposed in the prior art, the metamaterial wave absorber provided by the invention well inhibits the absorption of electromagnetic waves with wave bands of 0.6 micrometer to 4.5 micrometers, and achieves near-perfect broadband absorption of the electromagnetic waves with wave bands of 8 micrometers to 30 micrometers.
3. The materials used by the metamaterial wave absorber provided by the invention are conventional materials which are easy to obtain, are cheap and easy to realize, and are considerable in economy.
4. The metamaterial wave absorber provided by the invention has robustness in structure, and the change (increase or decrease) of the structure size in a certain range has little influence on the performance of reflection and absorption of the metamaterial wave absorber.
Drawings
FIG. 1 is a top plan view of a three-dimensional structure x-y of a metamaterial wave absorber of the present invention.
FIG. 2 is a side view in the x-z plane of the metamaterial absorber structure of the present invention.
FIG. 3 is a schematic diagram of an absorption spectrum of a metamaterial wave absorber structure according to an embodiment of the invention.
FIG. 4 is a schematic diagram of an absorption spectrum of a metamaterial wave absorber structure in accordance with a second embodiment of the present invention.
FIG. 5 is a schematic diagram of an absorption spectrum of a metamaterial wave absorber structure in the third embodiment of the invention.
FIG. 6 is a schematic diagram of an absorption spectrum of a metamaterial wave absorber structure according to the present invention in the fourth embodiment.
FIG. 7 is a schematic diagram of an absorption spectrum of a metamaterial wave absorber structure in the fifth embodiment of the invention.
Detailed Description
The present invention will be further described with reference to the following detailed description and the accompanying drawings, but the present invention is not limited to the following embodiments. Those skilled in the art will readily modify the following examples and apply the general principles to other embodiments without the use of inventive faculty. Therefore, it is intended that all such modifications and improvements within the scope of the invention be covered by the claims appended hereto.
Example one
Thickness of the silica pyramid (1) under parallel wave incidence
Figure BDA0002249174280000031
Micron, its top width wux＝w uy1 micron, base width wlx＝wly8 [ mu ] m, spacing i [ mu ] m, thickness h of silicon dioxide film (2)sThe material for the metal film substrate (3) is gold with a thickness h of 1 μm Au1 micron. The absorption spectrum of the proposed metamaterial absorber is shown in fig. 3, and it can be seen that the reflectivity is greater than 0.9 at 0.6 to 4.5 microns and the absorptivity is greater than 0.9 at 8 to 30 microns.
Example two
Thickness of the silica pyramid (1) under parallel wave incidence
Figure BDA0002249174280000032
Its top width wux＝w uy1 micron, base width wlx＝wly7.5 micrometers, with an interval i of 0.5 micrometers, and a thickness h of the silicon dioxide film (2)sThe material for the metal film substrate (3) is gold with a thickness h of 8 μm Au2 microns. The absorption spectrum of the proposed metamaterial wave absorber is shown in fig. 4, and it can be seen that the reflectivity from 0.6 micrometer to 4.5 micrometer is also greater than 0.9, and the absorption from 8 micrometer to 30 micrometer is also greater than 0.9, so that the parameters such as the structure size of the metamaterial wave absorber are changed, and high reflection of electromagnetic waves with the incidence range from 0.6 micrometer to 4.5 micrometer and high absorption of electromagnetic waves with the incidence range from 8 micrometer to 30 micrometer can be realized as long as the basic units formed by the upper silicon dioxide pyramid body (1), the middle silicon dioxide film (2) and the lower metal film substrate (3) are distributed in an array period on the x-y horizontal plane.
EXAMPLE III
Thickness of the silica pyramid (1) at parallel wave incidence
Figure BDA0002249174280000033
Its top width wux＝wuy1.2 μm, base width wlx＝wly8 microns, with an interval i of 0 microns, thickness h of the silicon dioxide film (2)sThe material for the metal film substrate (3) is gold with a thickness h of 1 μm Au1 micron. The absorption spectrum of the proposed metamaterial absorber is shown in fig. 5. It can be seen from this that, by reducing the structural size of the inventive metamaterial absorber to a certain range, the absorption in the long wavelength band of the electromagnetic wave is slightly affected, the absorption rate is reduced near 15 μm, but the absorption rate is still greater than 0.8, and the reflection in the short wavelength band is very little, so this example is used to illustrate that when the structural size of the proposed metamaterial absorber is changed, the purpose of high reflection in the visible light band and high absorption in the mid-infrared band can be achieved.
Example four
Thickness of the silica pyramid (1) under parallel wave incidence
Figure BDA0002249174280000034
Its top width wux1.2 microns, w uy1 micron, base width wlx7.5 μm, wly7 microns, with an interval i of 0.5 microns, thickness h of the silicon dioxide film (2)sThe material for the metal film substrate (3) is gold with a thickness h of 2 μm Au1 micron. The absorption spectrum of the proposed metamaterial absorber is shown in fig. 6, and it can be seen that the reflectivity is greater than 0.9 from 0.6 microns to 4.5 microns, and the absorptivity is greater than 0.9 from 8 microns to 30 microns. The example is used for explaining that when the top width and the bottom width of the silicon dioxide pyramid body (1) are different from each other, the absorption performance of the metamaterial wave absorber structure is slightly influenced, and the purposes of high reflection in a visible light wave band and high absorption in a middle infrared wave band can be achieved.
EXAMPLE five
Under parallel wave incidence, the silicon dioxide material is changed into aluminum oxide (Al)2O3) The aluminum oxide pyramid body has a thickness of 54 μm and a top width wux＝w uy1 micron, base width wlx＝wly7.5 microns, 0.5 micron apart, and a thickness h of the aluminum oxide film (2)sThe gold material for the metal thin film substrate (3) was replaced by a silver material, and the thickness thereof was 2 μm. The absorption spectrum of the proposed metamaterial absorber is shown in fig. 7, and it can be seen that the absorption rate is less than 0.1 from 0.6 microns to 5 microns, and the absorption rate is greater than 0.9 from 9.2 microns to 26.5 microns. This example illustrates that the material comprising the wave absorber does not substantially change its properties of high reflectivity in the visible solar band and high absorption in the mid-infrared band when the material is changed in the above range.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (5)

1. A metamaterial absorber having high reflection characteristics in a visible light band and high absorption characteristics in a mid-infrared band, comprising: three layer construction, the upper strata is silica pyramid body (1), and the middle level is silica film (2), and the lower floor is metal film substrate (3), its characterized in that: the upper silicon dioxide pyramid body (1), the middle silicon dioxide film (2) and the lower metal film substrate (3) form a basic unit, and the basic unit is distributed in an array period on an x-y horizontal plane.
2. The metamaterial wave absorber with high reflection in the visible band and high absorption in the mid-infrared band as claimed in claim 1, wherein: thickness of silicon dioxide pyramid body (1)
Figure FDA0002249174270000011
Width w of its top in x directionux1-4 μm, width w in y directionuy1-4 μm, and a width w of the bottom in the x-directionlx5 to 20 μm, and a width w in the y directionly5-20 μm, the interval between the silicon dioxide pyramids is 0-5 μm, and the thickness h of the silicon dioxide film (2)s0 to 40 μm, and a metal thin film substrate (3) having a film thickness hAuThe height of the silica pyramid (1) can be changed within the above range, i.e., 0.05 to 5 μm
Figure FDA0002249174270000012
Width w of the topuxAnd wuyWidth of bottom wlxAnd wlyChanging the interval i between the silicon dioxide pyramids (1) and the thickness h of the silicon dioxide film (2)sChanging the film thickness h of the metal film substrate (3)AuAnd the like, high reflection in a visible light band and high absorption in a middle infrared band can be realized.
3. The wave-absorbing metamaterial according to claim 1 having high reflectivity in the visible and absorption in the mid-infrared bandThe body, its characterized in that: the thickness of each silica pyramid (1) in the metamaterial structure can be varied within the scope of claim 2Width w of the topuxAnd wuyWidth of bottom wlxAnd wlyAnd the spacing i, and the structural dimensions of different silica pyramids (1) may be slightly different, and such modifications are intended to be within the scope of the present invention.
4. The metamaterial wave absorber with high reflection in the visible band and high absorption in the mid-infrared band as claimed in claim 1, wherein: the material of the metal film substrate (3) can be metal such as metal gold, silver, copper, tungsten, aluminum and the like, the materials of the silicon dioxide pyramid body (1) and the silicon dioxide film (2) can be replaced by other materials such as aluminum oxide, glass and the like which have low visible light absorption and high infrared band absorption, and the improvement is protected by the invention.
5. The invention discloses a metamaterial wave absorber with high reflection in visible light band and high absorption in middle infrared band, which is prepared by changing the structural dimension of the metamaterial wave absorber according to the invention, such as enlarging or reducing the structure, modifying the structural parameters mentioned in the claim 2, making non-periodic structural changes, changing the materials mentioned in the claim 4, and the like, and the invention is protected.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563759A (en) * 2020-11-30 2021-03-26 合肥工业大学 Dual-frequency ultra-wideband metamaterial wave-absorbing unit and wave-absorbing body
CN114200559A (en) * 2021-12-21 2022-03-18 吉林大学 Ultra-wideband visible light and near-infrared metamaterial wave absorber
WO2023202872A1 (en) * 2022-04-20 2023-10-26 Nil Technology Aps Optical structures that include an anti-reflective coating on tapered meta-atoms

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563759A (en) * 2020-11-30 2021-03-26 合肥工业大学 Dual-frequency ultra-wideband metamaterial wave-absorbing unit and wave-absorbing body
CN112563759B (en) * 2020-11-30 2022-06-10 合肥工业大学 Dual-frequency ultra-wideband metamaterial wave-absorbing unit and wave-absorbing body
CN114200559A (en) * 2021-12-21 2022-03-18 吉林大学 Ultra-wideband visible light and near-infrared metamaterial wave absorber
CN114200559B (en) * 2021-12-21 2024-03-26 吉林大学 Ultra-wideband visible light and near infrared metamaterial wave absorber
WO2023202872A1 (en) * 2022-04-20 2023-10-26 Nil Technology Aps Optical structures that include an anti-reflective coating on tapered meta-atoms

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