CN113161763A - Graphene-based all-dielectric terahertz tunable wave absorber - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 58
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 52
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 13
- 239000004642 Polyimide Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 229920001721 polyimide Polymers 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 72
- 239000002356 single layer Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 23
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 6
- 238000000862 absorption spectrum Methods 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
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- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
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- 230000010287 polarization Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
Abstract
The invention discloses a graphene-based all-dielectric terahertz tunable wave absorber, which belongs to the field of terahertz wave absorption and has an absorption rate of 99.6% at about 4.5 THz. Is characterized in that: the designed wave absorber is a high-reflection layer which is formed by alternately arranging a patterned graphene layer (1-4), a dielectric layer film (5), five layers of gallium arsenide (6-10) and four layers of polyimide media (11-14) from top to bottom. The thickness and the refractive index of the high-reflection layer are obtained by a phase difference and characteristic matrix method of the multilayer dielectric layer; obtaining an absorption spectrum of the structure by using a time domain finite integration method; finally, the structural material of the model is optimized by parametric scanning. The invention has simple structure, convenient processing, high absorption rate, no metal loss and capability of dynamically adjusting the absorption frequency of the wave absorber, provides an idea for the design of the all-dielectric adjustable wave absorber, reduces the problems of heating and high loss of the metal substrate of the traditional wave absorber, and can be widely applied to the design of various wave absorbers, modulators and detectors.
Description
(I) technical field
The invention relates to a graphene-based all-dielectric terahertz tunable wave absorber, which can be used for developing tunable terahertz devices based on all-dielectric structures, solves the problems of resistance, heating and high loss of a metal substrate of a traditional wave absorber, has the characteristic of high absorption in a specific frequency band, and can be widely applied to the design of various other wave absorbers, modulators and detectors. Belonging to the field of terahertz metamaterial wave absorption.
(II) background of the invention
In recent years, the metamaterial wave-absorbing material is developed vigorously in the terahertz field, and one of the advantages of the terahertz wave-absorbing material is that the electromagnetic property of the metamaterial is determined by the geometric shape of the metamaterial, so that the metamaterial has the characteristics of simplicity, flexibility and easy change in the wave-absorbing field. Meanwhile, the graphene can support the propagation of surface plasmons in a terahertz waveband, the absorption of single-layer graphene to light can reach 2.3%, the carrier concentration of the graphene is changed in a chemical doping or external electric field mode, the chemical potential of the graphene is regulated and controlled, and the purpose of controlling the absorption frequency of the wave absorber is achieved finally. Therefore, the graphene is very promising in the design application of the metamaterial wave absorber. The development background of the metamaterial wave absorber is mainly that a single-waveband perfect absorber with a metal surface resonance structure is designed for the first time from 2008 Landy et al, then terahertz absorbers with various shapes are proposed by people on the basis, and along with the appearance of novel two-dimensional materials, for example, graphene, black phosphorus and the like are rapidly applied to the design of the metamaterial wave absorber, the terahertz wave absorber greatly enriches the forms and functions. However, most of the terahertz wave absorbers are made of metal substrates, and the thickness of the metal substrates is designed to be larger than the skin depth of the metal substrates in the terahertz wave band, so that the purpose of no electromagnetic wave transmission is achieved. Although the mode effectively prevents the transmission condition of electromagnetic waves, the graphene structure of the wave absorber suffers from the problems of high loss of a metal substrate, heating and difficult compatibility with a complementary metal oxide semiconductor manufacturing process, and the application range of the terahertz wave absorber is greatly reduced.
In 2010, in the text Thin-Film Optical Filters, the authors proposed a high-reflectivity mirror coating theory, demonstrating the possibility of the existence of all-dielectric mirrors, the only requirement for most elements that function to reflect most of the incident light is that the mirror reflectivity should be as high as possible, and certainly in some special applications, not only should the reflectivity be high, but also the absorption should be very low. And by reflecting the design of the wave absorber, the reflectivity of the wave absorber can be improved by adding an additional dielectric layer. Multilayer all dielectric reflectors combine maximum reflectivity and minimum absorption and transmit energy that they do not reflect.
The graphene-based all-dielectric terahertz tunable wave absorber disclosed by the invention can effectively avoid the limitations and problems that the graphene structure suffers from high loss of a metal substrate under the condition of absorbing electromagnetic waves, the heating is caused, and the compatibility with a complementary metal oxide semiconductor manufacturing process is difficult. The terahertz wave band absorber can be used for absorbing electromagnetic waves of a specific terahertz wave band in an environment sensitive to temperature, loss and compatibility, can be widely applied to various practical fields such as sensing, imaging and stealth, and provides certain reference for the design of other all-dielectric structural devices. The high-reflectivity gallium arsenide layer and the low-reflectivity polyimide layer are mutually crossed and stacked to form a high-reflectivity layer, so that the transmission of electromagnetic waves in a specific frequency band is prevented. The reflection wave band of the high-reflection layer is designed to match the structural shape of the top graphene layer, and finally, an additional dielectric layer is added to connect the graphene layer and the high-reflection layer to improve the reflectivity of the graphene layer and the high-reflection layer. Compared with the traditional wave absorber, the wave absorber has the advantages that the problems of heating and loss of the metal substrate are solved due to the use of the high-reflection layer, and the compatibility of the wave absorber is improved.
Disclosure of the invention
Aiming at the defects in the prior art, the invention aims to provide an all-dielectric terahertz tunable wave absorber based on graphene.
The purpose of the invention is realized as follows:
the all-dielectric terahertz tunable wave absorber based on the graphene is designed. The method is characterized in that: the wave absorber with the all-dielectric structure is a reflection structure which is formed by alternately arranging patterned graphene layers (1, 2, 3 and 4), a dielectric layer film (5), 5 layers of gallium arsenide (6, 7, 8, 9 and 10) and 4 layers of polyimide media (11, 12, 13 and 14) from top to bottom, and the structures of all the layers are tightly attached. The transverse period and the longitudinal period of the all-dielectric terahertz tunable wave absorber based on the graphene periodically are both 4.2 microns, the top patterned graphene layer is 4 completely-consistent 1/4 circles with the radius of 1.5 microns, the centers of the circles are respectively located at four vertexes of the wave absorber, the dielectric layers are made of thin film materials with the dielectric constant of 3.9 and the thickness of 3.9 microns, the thickness and the refractive index of each layer in the reflecting structure are designed according to the phase difference and the characteristic matrix method of the multilayer dielectric coating, the thicknesses of the 5 layers of gallium arsenide (6, 7, 8, 9 and 10) are both 5 microns, the dielectric constants are both 12.94, the thicknesses of the 4 layers of polyimide media (11, 12, 13 and 14) are both 7.9 microns, and the dielectric constants are both 3.5. The top material is single-layer graphene with the thickness of 0.34 nm.
The technical scheme adopted by the invention is as follows:
step (1): and (3) researching the dynamic conductivity, dielectric constant and the like of the single-layer graphene, selecting a research frequency range of 3-6.5THz, calculating and simulating the dynamic conductivity and dielectric constant of the graphene in the corresponding frequency band, and recording data.
Step (2): and establishing a material model by using the dielectric constant data of the graphene.
And (3): the thickness and refractive index of each layer of the reflecting structure are designed according to the phase difference of the multi-layer dielectric coating and a characteristic matrix method so as to match the maximum absorption frequency of the graphene layer.
And (4): and (3) performing simulation on the reflection structure by using a time domain finite integration (CST) method, and further optimizing the parameter material to realize perfect matching of the optimal absorption frequency corresponding to the top graphene structure.
And (5): and establishing a graphene model on the high-reflection layer and the intermediate medium layer, and performing numerical calculation by adopting a Finite Element Method (FEM), a Finite Difference Time Domain (FDTD) or a finite integration time domain (CST).
The invention achieves the following good effects:
1. the graphene-based all-dielectric terahertz tunable wave absorber is simple in structure, the perfect absorption effect in a frequency band can be realized only by combining the graphene structure with four 1/4 circles with a high-reflection layer, and the absorption rate reaches 99.6%.
2. When the incident angle is increased, good absorption effect can still be kept, and when the incident angle is 50 degrees, the absorption rate is still more than 90 percent.
3. The designed high-reflection layer is easy to process and manufacture, the reflectivity can reach nearly 100% under the condition of less layers, and the absorptivity is extremely low.
4. The designed wave absorber completely avoids metal loss, and has the advantages of less heating, low loss and easy compatibility with the complementary metal oxide semiconductor manufacturing process.
5. The top graphene structure is symmetrical about the x axis and the y axis, and can obtain the same absorption curve with TE and TM waves, so that the polarization insensitivity of the structure is realized.
6. The wave absorber adopts a two-dimensional periodic structure, has a simple and compact structure and is convenient for large-scale integration.
(IV) description of the drawings
FIG. 1 is a top view of the structure of the present invention; the transverse period and the longitudinal period p of the all-dielectric wave absorber are both 4.2 mu m, the radius R of 4 1/4 circles is 1.5 mu m, and the centers of the circles are respectively positioned on four vertexes of the wave absorber.
FIG. 2 is a schematic diagram of the cell structure of the present invention. 1-4: a graphene layer; 5: an insulating dielectric layer; 6-10: a gallium arsenide dielectric layer; 11-14: and a polyimide dielectric layer. The length and width of the insulating medium layer are p equal to 4.2 μm, the height h1 equal to 3.9 μm, the height h2 equal to 5 μm of the gallium arsenide medium layer and the height h3 equal to 7.9 μm of the polyimide medium layer.
Fig. 3 is a graph of absorption efficiency of TE waves and TM waves of the wave absorbing device calculated by using a time domain finite integration method (CST) under normal incidence of electromagnetic waves.
FIG. 4 is a plot of the absorption spectrum at 0.55-0.80eV with the Fermi level of single layer graphene changed.
FIG. 5 is a diagram showing an absorption spectrum at 0.65eV with a change in the incident angle of an electromagnetic wave.
(V) detailed description of the preferred embodiments
The following further describes embodiments of the present invention with reference to the drawings.
The invention designs an all-dielectric terahertz tunable wave absorber based on graphene, and the specific implementation mode comprises the following steps:
fig. 2 is a schematic diagram of a unit structure of a graphene-based all-dielectric terahertz tunable wave absorber. The transverse period and the longitudinal period of the top graphene layers (1, 2, 3 and 4) are set to be P, and the graphene radius of the 4 1/4 circular structures is R. The dielectric constant of the intermediate dielectric layer (5) is set to 3.9 and the thickness is 3.9 μm. The bottom highly reflective layer is composed of five layers of GaAs (6-10) and four layers of polyimide (11-14) stacked alternately, and the dielectric constant of GaAs is epsilon2A thickness of h2 and a dielectric constant of ε3And the thickness is h3, and the layers are tightly attached.
The invention designs a reflection-type wave absorber with a period p of 4.2 mu m in a range of 3-6.5 THz.
FIG. 1 is a graph of top layer graphene with a radius of 4 1/4 circular structures set at 1.5 μm, a thickness of 0.34nm, and center coordinates of (2.1 μm ) (-2.1 μm,2.1 μm) (2.1 μm, -2.1 μm) (-2.1 μm ), respectively.
The thickness and refractive index of the designed high reflection layer are designed according to the phase difference and characteristic matrix method of the multi-layer dielectric layer. At the boundary of the highly reflective layer, reflection will occur in a medium with a refractive index below the critical medium, and therefore, in order to ensure that the relative displacement is 180 degrees, thereby causing the electromagnetic waves to cancel each other, the optical thickness of the single reflective layer is 1/4 wavelengths. For the two beams to cancel completely, the reflected light at the upper and lower boundaries of the medium has equal amplitude, which means that the refractive index ratio of each boundary is equal and the refractive index is the square root of the dielectric constant, so we choose the dielectric constant ε2Gallium arsenide with a thickness h2 of 5 μm and a dielectric constant ε3A polyimide cross stack of 3.5 and a thickness h3 of 7.9 μm forms a perfect highly reflective layer around 4.5 THz. At normal incidence, the effective admittance of the highly reflective layer and its reflectivity can be calculated as follows:
effective admittance
Reflectivity of light
Wherein n isHIs the refractive index of gallium arsenide, nLIs the refractive index of polyimide, nSThe refractive index of air is taken as 1, and m is the total number of the dielectric layers.
As can be seen from the above equations (1) and (2), the reflectivity of the high reflection layer of the all-dielectric wave absorber in a specific frequency band is close to 100%, and almost no electromagnetic wave is transmitted, and only reflection is possible, so the absorptivity calculation formula is based on
A(ω)＝1-R(ω)-T(ω)＝1-|S11|2-|S21|2 (3)
Can be simplified into
A(ω)＝1-R(ω)＝1-|S11|2。 (4)
For reflection | S11|2The designed graphene structure on the top layer of the wave absorber acts with incident electromagnetic waves to generate electric resonance, and the graphene layer and the high-reflection layer generate strong coupling effect, so that antiparallel current is formed to generate magnetic resonance. By changing the shape, the structure and the size of the graphene layer, the dielectric constant is equal to the magnetic permeability through electromagnetic resonance, and the impedance of the structure is matched with that of a free space, so that the reflectivity of the designed wave absorber is zero, namely perfect absorption is achieved.
The Fermi level of the graphene is 0.65eV, the absorption rate of the all-dielectric wave absorber is calculated by a time domain finite integration (CST) method, and the obtained absorption spectrum diagram is shown in figure 3, so that the absorption spectrum diagram has quite strong absorptivity for TE and TM waves about 4.5 THz.
As a novel two-dimensional material, graphene has an important characteristic of electrical adjustability, and as shown in FIG. 4, the wave absorber can achieve good absorption rate between 0.55eV and 0.80eV, so that the performance of adjustable frequency band of the wave absorber is realized.
The wave absorber is highly symmetrical about the X, Y axis and has the characteristic of being highly insensitive to polarization, as shown in fig. 5, when the incident angle is 40 °, the absorption rate is about 96%, and when the incident angle is 50 °, the absorption rate is still over 90%.
Claims (6)
1. An all-dielectric terahertz tunable wave absorber based on graphene. The method is characterized in that: the wave absorber with the all-dielectric structure is a reflection structure which is formed by alternately arranging patterned graphene layers (1, 2, 3 and 4), a dielectric layer film (5), 5 layers of gallium arsenide (6, 7, 8, 9 and 10) and 4 layers of polyimide media (11, 12, 13 and 14) from top to bottom, and the structures of all the layers are tightly attached. The transverse period and the longitudinal period of the periodic graphene-based all-dielectric terahertz tunable wave absorber are both p, the top patterned graphene layer is 4 completely-consistent 1/4 circles with the radius of R, the circle centers are respectively located at four vertexes of the wave absorber, and the dielectric constant of the dielectric layer film is designed to be epsilon1The thickness is h1, the thickness and refractive index of each layer in the reflecting structure are designed according to the phase difference and characteristic matrix method of the multilayer dielectric coating, the thickness of the above 5 layers of gallium arsenide (6, 7, 8, 9, 10) is h2, and the dielectric constants are epsilon2The thickness of each of the 4-layer polyimide media (11, 12, 13, 14) was h3, and the dielectric constants were ε3Dielectric constant ε of GaAs2Should be greater than the dielectric constant ε of the polyimide3. The top material is single-layer graphene.
2. The graphene-based all-dielectric terahertz tunable wave absorber according to claim 1, wherein a single structure period is p ═ 4.2 μm.
3. The graphene-based all-dielectric terahertz tunable wave absorber of claim 1, wherein the dielectric layer film thickness h1 is 3.9 μm, and the dielectric constant epsilon13.9, the thicknesses h2 of the 5-layer GaAs layers (6, 7, 8, 9, 10) in the reflective structure were all 5 μm, and the dielectric constant ε2All 12.94, the thickness h3 of the 4-layer polyimide media (11, 12, 13, 14) were all 7.9. mu.m, the dielectric constant ε3Are all 3.5, and the function of the utility model is to prevent the electromagnetic wave with specific frequency from transmittingAnd the top layer adopts single-layer graphene, and the thickness is 0.34 nm.
4. The graphene-based all-dielectric terahertz tunable wave absorber of claim 1 is characterized in that the radius R of 4 consistent 1/4 circles of the top patterned graphene is 1.5 μm, and the centers of the circles are respectively located at four vertexes of the top of the wave absorber unit structure.
5. The graphene-based all-dielectric terahertz tunable wave absorber of claim 1 is characterized in that the Fermi level of graphene can be changed due to the dynamic adjustability of graphene, so as to achieve the function of different wave absorbing frequencies.
6. The graphene-based all-dielectric terahertz tunable wave absorber according to claim 1 is characterized in that the invention operates in the 4.25-4.85THz frequency band.
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| JP2023050071A (en) * | 2021-09-29 | 2023-04-10 | 采▲ぎょく▼科技股▲ふん▼有限公司 | Meta optical device, optical system, and aberration correction method |
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