CN112820787A - Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof - Google Patents
Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof Download PDFInfo
- Publication number
- CN112820787A CN112820787A CN202110112005.3A CN202110112005A CN112820787A CN 112820787 A CN112820787 A CN 112820787A CN 202110112005 A CN202110112005 A CN 202110112005A CN 112820787 A CN112820787 A CN 112820787A
- Authority
- CN
- China
- Prior art keywords
- electrode layer
- nanosheet array
- layer
- gap
- nanosheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000002135 nanosheet Substances 0.000 claims abstract description 82
- 239000003292 glue Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- KBPGBEFNGHFRQN-UHFFFAOYSA-N bis(selanylidene)tin Chemical compound [Se]=[Sn]=[Se] KBPGBEFNGHFRQN-UHFFFAOYSA-N 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 81
- 230000007547 defect Effects 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 239000002064 nanoplatelet Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a photoelectric detector made of a vertical two-dimensional thin film material and a preparation method thereof. The preparation method comprises the following steps: manufacturing and forming a first electrode layer on a substrate; manufacturing a nanosheet array on the first electrode layer, wherein the nanosheet array is formed by a vertical two-dimensional semiconductor material, a certain gap is formed between the nanosheets, glue is uniformly distributed on the nanosheet array so as to form an insulating glue layer in the gap of the nanosheet array, and the insulating glue layer is arranged on the first electrode layer exposed from the gap; and manufacturing and forming a second electrode layer on the nanosheet array and the insulating glue layer. The nanosheet array is manufactured to form a vertical type, the 3D vertical type nanosheet array has a good light sinking effect, the external quantum efficiency and the light responsivity of the detector are greatly improved, the insulating glue layer is arranged in the gap of the nanosheet array, the upper electrode layer and the lower electrode layer are prevented from being directly conducted through the gap, and therefore the stability and the feasibility of the photoelectric detector are guaranteed.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a photoelectric detector based on a vertical two-dimensional thin film material and a preparation method thereof.
Background
In the field of mobile electronics such as smart phones, great challenges are faced on how to realize high-quality imaging under the condition of weak light, and strong demands are made on ultrahigh-sensitivity photoelectric detection materials and imaging chips. At present, core photosensitive materials of commercial photodetectors mainly comprise semiconductors such as Si, Ge, InGaAs, HgCdTe and the like, but the external quantum efficiency of photodetectors based on the traditional semiconductor materials is low, and the external quantum efficiency of mature Si devices is only about 50-80%, so that the detection capability of the detectors for weak light signals is insufficient, and the imaging quality of the detectors under the weak light conditions such as night, indoor without illumination light and the like is limited. Therefore, the search for new photoelectric conversion materials and the development of ultra-high sensitivity photodetectors remain the hot research directions in the material field and the photoelectric field.
Compared with the traditional semiconductor material, the charge separation process of the two-dimensional layered material is more efficient due to the benefit of the specific quantum confinement effect and the surface effect (larger specific surface area) of the nanoscale, and the photo-generated carriers with high density and longer service life are easily obtained, so that the external quantum efficiency and the photoresponse rate of the detector are improved.
Although single photodetection prototype devices based on two-dimensional materials have shown their excellent photoelectric conversion performance, their distance practicalization still requires a series of challenges to be solved. One reason for this is that the thickness of the semiconductor layer formed by two-dimensional materials is very thin, and the semiconductor layer generally has a gap, and at this time, the electrode pads on both sides of the semiconductor layer are easily and directly conducted, which may affect the normal operation of the photodetector. Another reason is the low light utilization efficiency of existing photodetectors based on two-dimensional materials.
Disclosure of Invention
(I) technical problems to be solved by the invention
The technical problem solved by the invention is as follows: how to improve the light utilization efficiency of the photoelectric detector and avoid the electrode plates at the two ends of the semiconductor layer from being directly conducted.
(II) the technical scheme adopted by the invention
A vertical two-dimensional thin film material-based photodetector, comprising:
a first electrode layer;
a nanosheet array disposed on the first electrode layer, the nanosheet array being formed of an upright two-dimensional semiconductor material, the nanosheet array having a gap that exposes a portion of the first electrode layer;
the insulating glue layer is positioned in the gap of the nanosheet array and is arranged on the first electrode layer exposed from the gap;
and the second electrode layer is arranged on the nanosheet array and the insulating glue layer.
Preferably, the photodetector further includes a passivation layer disposed on the nanosheet array and the insulating glue layer, and the passivation layer is located below the second electrode layer.
Preferably, the material of the passivation layer is aluminum oxide, and the thickness of the passivation layer ranges from 5nm to 10 nm.
Preferably, the material of the nanosheet array is a tin diselenide nanosheet.
The application also discloses a preparation method of the photoelectric detector based on the vertical two-dimensional thin film material, which comprises the following steps:
manufacturing and forming a first electrode layer on a substrate;
fabricating a nanosheet array on the first electrode layer, the nanosheet array being formed of an upstanding two-dimensional semiconductor material, the nanosheet array having a gap exposing a portion of the first electrode layer;
gluing the nanosheet array to form an insulating glue layer in the gap of the nanosheet array, wherein the insulating glue layer is arranged on the first electrode layer exposed from the gap;
and manufacturing and forming a second electrode layer on the nanosheet array and the insulating glue layer.
Preferably, a molecular beam epitaxy process is adopted to fabricate and form a nanosheet array on the first electrode layer.
Preferably, after the nanosheet array is fabricated and formed on the first electrode layer, the preparation method further comprises:
and carrying out thermal annealing treatment on the nanosheet array.
Preferably, before forming the second electrode layer, the preparation method further comprises:
and manufacturing and forming a passivation layer on the nanosheet array and the insulating glue layer, wherein the passivation layer is positioned below the second electrode layer.
Preferably, the second electrode layer is formed by an electron beam evaporation process.
Preferably, the material of the nanosheet array is a tin diselenide nanosheet.
(III) advantageous effects
The invention discloses a photoelectric detector made of vertical two-dimensional thin film material and a preparation method thereof, and compared with the traditional photoelectric detector, the photoelectric detector has the following technical effects:
the vertical nanosheet array is manufactured and formed firstly, the 3D vertical nanosheet array has a light trapping effect, the external quantum efficiency and the light responsivity are greatly improved, an insulating glue layer is further arranged in a gap of the nanosheet array, and the upper electrode layer and the lower electrode layer are directly conducted through the gap, so that the normal use of the photoelectric detector is ensured.
In addition, the nano-sheet array can be prepared uniformly in a large area by adopting a molecular beam epitaxy process.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a vertical two-dimensional thin-film photodetector according to a first embodiment of the present invention;
fig. 2 is a schematic view of a vertical two-dimensional thin-film photodetector according to a second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Before describing in detail the various embodiments of the present application, the inventive concepts of the present application are first briefly described: the utility model discloses a photoelectric detector based on two-dimensional semiconductor material's among the prior art light utilization ratio is lower, the thickness of semiconductor layer is thinner and have the clearance in addition, can lead to the electrode slice direct conduction of both sides, this application adopts vertical type two-dimensional semiconductor material to constitute the nanometer piece array at first, 3D vertical type nanometer piece array has the light trapping effect, the external quantum efficiency and the light responsivity of detector have greatly been improved, and further set up the insulating glue film in the clearance of nanometer piece array, upper and lower two electrode layers directly take place to switch on through the clearance, make between the upper and lower two electrodes switch on through the photogenerated carrier that nanometer piece array produced, thereby guarantee photoelectric detector's normal use.
Example one
Specifically, as shown in fig. 1, the method for manufacturing a vertical two-dimensional thin film material-based photodetector disclosed in this embodiment includes the following steps:
step S10: forming a first electrode layer 20 on the substrate 10;
step S20: fabricating a nanosheet array 30 on the first electrode layer 20, the nanosheet array 30 being formed of an upstanding two-dimensional semiconductor material, the nanosheet array 30 having a gap 31, the gap 31 exposing a portion of the first electrode layer 20;
step S30: gluing the nanosheet array 30 to form an insulating glue layer 40 in the gaps 31 of the nanosheet array 30, wherein the insulating glue layer 40 is disposed on the first electrode layer 20 exposed from the gaps 31;
step S40: and manufacturing and forming a second electrode layer 50 on the nanosheet array 30 and the insulating glue layer 40.
In step S10, the substrate 10 is a glass substrate, and the material of the first electrode layer 20 is a molybdenum electrode.
In step S20, a molecular beam epitaxy process is performed on the first electrode layer 20 to form a nano-chip array 30.
Illustratively, a high-purity selenium material source and a high-purity tin material source, which are preferably 99.99% pure, are respectively added to a molecular beam epitaxy apparatus (MBE) by which the selenium material source and the tin material source are respectively heated and sprayed onto a substrate in the form of a molecular beam or an atomic beam, wherein the temperatures of the Se, Sn source and substrate are 245 ℃, 1100 ℃ and 245 ℃, respectively, and the degree of vacuum is 2 × 105Pa, formation of SnSex(x is 1.6-2.2) nanosheet array structure. The growth time is 1-40 min, the width of the nano-sheet in the nano-sheet array 30 is 20-30 nm, and the height is 1-2 μm. It should be noted that when the growth temperature is lower (C)<250 c) and the molecular migration energy is insufficient to cross the potential barrier and thus evolve into a longitudinal growth mode.
In another embodiment, after the nanosheet array 30 is formed on the first electrode layer 20, the method of preparing further comprises: the nanosheet array 30 is subjected to a thermal annealing process.
Specifically, SnSe is regulated and controlled by adjusting substrate temperature2The crystal quality of the nanosheets and the late thermal annealing treatment regulate and control the surface defect state, including the adsorption (electron trap) of the internal defects (Vsn, Vse and SnSe) of the material and the surface defects (SnSe 2) of the material to O in the air. The temperature of the substrate is controlled to be (150 ℃ -250 ℃), and the thermal annealing treatment mainly comprises the utilization of 2% H2Se and 98% of N2The internal defects are regulated and controlled by controlling the temperature rise and the heat preservation temperature and time under the atmosphere, so that the temperature is controlled to be (200℃)The temperature rise and the heat preservation time of minus 280 ℃ are 30min to 60 min. Of course in other embodiments, at 3% H2S and 97% N2The internal defects are regulated and controlled by controlling the temperature rise and the heat preservation temperature and time under the atmosphere, so that the temperature rise and the heat preservation time are controlled to be 30-60 min at 200-280 ℃.
SnSe prepared in step S202The nanosheet array has extremely high light trapping effect, the absorption of 500-600nm band light is more than 96%, the external quantum efficiency and the light responsivity of the detector can be greatly improved, and the primarily prepared SnSe based on the 3D vertical structure2The external quantum efficiency of the nano-sheet photoelectric detector is as high as 6.43 multiplied by 105% and response time is less than 20 ms.
In step S30, the obtained SnSe2And (3) homogenizing the nanosheet two-dimensional thin film material, regulating and controlling the thickness of the homogenized glue by controlling the rotating speed, and then testing the thickness of the insulating glue layer by using a film thickness meter. The rotating speed range is 1000-4000 rpm, and the thickness is controlled to be about 1-2 um. The type of the insulating adhesive layer 40 is selected from PMMA, electron beam resist positive (RZJ-304), and epoxy negative (SN-100), and then the light transmittance of the adhesive is characterized, and the best light transmittance is selected.
In step S40, after the glue is homogenized, the second electrode layer 50 is formed by evaporation by an electron beam evaporation method, the second electrode layer 50 is an electrode in a Ni-Al-Ni form, which has good stability and can be uniformly prepared in a large area, the preparation method is simple and easy to operate, and the thickness can be controlled to be about 8000-10000 nm.
In another embodiment, before forming the second electrode layer 50, the preparation method further includes: a passivation layer 60 is formed on the nanosheet array 30 and the insulating glue layer 40, and the passivation layer 60 is located below the second electrode layer 50. Illustratively, the passivation layer 60 is formed using an atomic deposition process. The passivation layer 60 can regulate and control the surface defect state of the material, and the photon-generated electron-hole recombination rate is reduced by forming a Schottky barrier structure, namely, the dark current is reduced, and the photoresponse performance of the detector is improved.
The preparation method of the vertical two-dimensional thin-film-material-based photoelectric detector provided by the embodiment includes the steps of firstly manufacturing and forming a vertical nanosheet array, enabling the 3D vertical nanosheet array to have a light trapping effect, greatly improving the external quantum efficiency and the light responsivity of the detector, further arranging an insulating glue layer in a gap of the nanosheet array, and enabling an upper electrode layer and a lower electrode layer to be directly conducted through the gap, so that the normal use of the photoelectric detector is guaranteed. Meanwhile, the nano-sheet array can be prepared uniformly in a large area by adopting a molecular beam epitaxy process.
Example two
As shown in the figure, the photodetector based on the vertical two-dimensional thin film material disclosed in the second embodiment includes a first electrode layer 20, a nanosheet array 30, an insulating glue layer 40, and a second electrode layer 50. Wherein a nanoplatelet array 30 is disposed on the first electrode layer 20, the nanoplatelet array 30 is formed of an upstanding two-dimensional semiconductor material, the nanoplatelet array 30 has a gap 31, and the gap 31 exposes a portion of the first electrode layer 20. The insulating glue layer 40 is located in the gap 31 of the nanosheet array 30, and is disposed on the first electrode layer 20 exposed from the gap 31. The second electrode layer 50 is disposed on the nanosheet array 30 and the insulating glue layer 40.
In another embodiment, the photodetector further includes a passivation layer 60, the passivation layer 60 is disposed on the nanosheet array 30 and the insulating glue layer 40, and the passivation layer 60 is located below the second electrode layer 50.
Illustratively, the passivation layer 60 is made of aluminum oxide, the thickness of the passivation layer 60 is in a range of 5nm to 10nm, and the nanosheet array 30 is made of tin diselenide nanosheets.
The photoelectric detector of the second embodiment utilizes a vertical two-dimensional thin film material to form a vertical nanosheet array, the 3D vertical nanosheet array has a light trapping effect, the external quantum efficiency and the light responsivity of the detector are greatly improved, an insulating glue layer is further arranged in a gap of the nanosheet array, and an upper electrode layer and a lower electrode layer are directly conducted through the gap, so that the normal use of the photoelectric detector is ensured.
Although a few embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (10)
1. A photodetector based on a vertical two-dimensional thin film material, comprising:
a first electrode layer;
a nanosheet array disposed on the first electrode layer, the nanosheet array being formed of an upright two-dimensional semiconductor material, the nanosheet array having a gap that exposes a portion of the first electrode layer;
the insulating glue layer is positioned in the gap of the nanosheet array and is arranged on the first electrode layer exposed from the gap;
and the second electrode layer is arranged on the nanosheet array and the insulating glue layer.
2. The upright two-dimensional thin-film material photodetector of claim 1, further comprising a passivation layer disposed on said nanosheet array and said layer of insulating glue, said passivation layer underlying said second electrode layer.
3. The vertical two-dimensional thin-film photodetector of claim 1, wherein the passivation layer is made of alumina and has a thickness ranging from 5nm to 10 nm.
4. The upright two-dimensional thin-film material photodetector of claim 2, wherein the material of the nanosheet array is a tin diselenide nanosheet.
5. A preparation method of a photoelectric detector based on a vertical two-dimensional thin film material is characterized by comprising the following steps:
manufacturing and forming a first electrode layer on a substrate;
fabricating a nanosheet array on the first electrode layer, the nanosheet array being formed of an upstanding two-dimensional semiconductor material, the nanosheet array having a gap exposing a portion of the first electrode layer;
gluing the nanosheet array to form an insulating glue layer in the gap of the nanosheet array, wherein the insulating glue layer is arranged on the first electrode layer exposed from the gap;
and manufacturing and forming a second electrode layer on the nanosheet array and the insulating glue layer.
6. The preparation method according to claim 5, characterized in that a molecular beam epitaxy process is adopted to fabricate and form a nanosheet array on the first electrode layer.
7. The preparation method according to claim 5, wherein after the nanosheet array is fabricated and formed on the first electrode layer, the preparation method further comprises:
and carrying out thermal annealing treatment on the nanosheet array.
8. The method according to claim 7, wherein before forming the second electrode layer, the method further comprises:
and manufacturing and forming a passivation layer on the nanosheet array and the insulating glue layer, wherein the passivation layer is positioned below the second electrode layer.
9. The method according to claim 7, wherein the second electrode layer is formed by an electron beam evaporation process.
10. The preparation method according to claim 6, wherein the material of the nanosheet array is a tin diselenide nanosheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110112005.3A CN112820787A (en) | 2021-01-27 | 2021-01-27 | Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110112005.3A CN112820787A (en) | 2021-01-27 | 2021-01-27 | Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112820787A true CN112820787A (en) | 2021-05-18 |
Family
ID=75859831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110112005.3A Pending CN112820787A (en) | 2021-01-27 | 2021-01-27 | Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112820787A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122192A (en) * | 2021-11-04 | 2022-03-01 | 中国科学院深圳先进技术研究院 | Film preparation method and photoelectric detector |
| WO2024087338A1 (en) * | 2022-10-25 | 2024-05-02 | 深圳先进技术研究院 | Thermosensitive thin film, infrared detector, and manufacturing method for infrared detector |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090289320A1 (en) * | 2008-05-21 | 2009-11-26 | International Business Machines Corporation | Fast p-i-n photodetector with high responsitivity |
| CN102163638A (en) * | 2011-03-21 | 2011-08-24 | 中国科学院半导体研究所 | Etching-technology-based silicon science (SIS) junction solar cell |
| CN107123703A (en) * | 2017-06-22 | 2017-09-01 | 哈尔滨工业大学 | Vertical photodetector and preparation method based on free-standing stannic disulphide nano slice |
| CN107564992A (en) * | 2017-08-18 | 2018-01-09 | 上海理工大学 | A kind of heterojunction semiconductor ultraviolet light detector of quick response and preparation method thereof |
| CN110218970A (en) * | 2018-03-02 | 2019-09-10 | 深圳先进技术研究院 | A kind of preparation method of two selenizings tin thin film |
| CN112038442A (en) * | 2020-09-10 | 2020-12-04 | 华南师范大学 | Photoelectric detector and preparation method thereof |
-
2021
- 2021-01-27 CN CN202110112005.3A patent/CN112820787A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090289320A1 (en) * | 2008-05-21 | 2009-11-26 | International Business Machines Corporation | Fast p-i-n photodetector with high responsitivity |
| CN102163638A (en) * | 2011-03-21 | 2011-08-24 | 中国科学院半导体研究所 | Etching-technology-based silicon science (SIS) junction solar cell |
| CN107123703A (en) * | 2017-06-22 | 2017-09-01 | 哈尔滨工业大学 | Vertical photodetector and preparation method based on free-standing stannic disulphide nano slice |
| CN107564992A (en) * | 2017-08-18 | 2018-01-09 | 上海理工大学 | A kind of heterojunction semiconductor ultraviolet light detector of quick response and preparation method thereof |
| CN110218970A (en) * | 2018-03-02 | 2019-09-10 | 深圳先进技术研究院 | A kind of preparation method of two selenizings tin thin film |
| CN112038442A (en) * | 2020-09-10 | 2020-12-04 | 华南师范大学 | Photoelectric detector and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122192A (en) * | 2021-11-04 | 2022-03-01 | 中国科学院深圳先进技术研究院 | Film preparation method and photoelectric detector |
| WO2024087338A1 (en) * | 2022-10-25 | 2024-05-02 | 深圳先进技术研究院 | Thermosensitive thin film, infrared detector, and manufacturing method for infrared detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9583655B2 (en) | Method of making photovoltaic device having high quantum efficiency | |
| CN102110734B (en) | Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell | |
| JP2011003877A (en) | Solar cell, and method of fabricating the same | |
| US20110017289A1 (en) | Cigs solar cell and method of fabricating the same | |
| CN112820787A (en) | Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof | |
| KR20110039697A (en) | Compound semiconductor solar cells and methods of fabricating the same | |
| WO2021047673A1 (en) | Cadmium telluride solar cell and preparation method thereof | |
| CN101700871B (en) | Copper-indium-selenium nanowire array and preparation method and application thereof | |
| TW201436264A (en) | Solar cell and method of manufacture thereof | |
| US20130152999A1 (en) | Photovoltaic component for use under concentrated solar flux | |
| CN101700872B (en) | Copper-indium-gallium-selenium nanowire array and preparation method and application thereof | |
| KR100809427B1 (en) | Photoelectric conversion device and method for manufacturing thereof | |
| JPH09172193A (en) | Thin film solar battery | |
| CN111370521A (en) | Silicon heterojunction solar cell and emitter thereof and preparation method of emitter | |
| JP3408618B2 (en) | Solar cell manufacturing method | |
| TWI600176B (en) | Compound-based solar cell and manufacturing method of light absorption layer | |
| US20110088782A1 (en) | Photoelectric conversion semiconductor layer, method for producing the same, photoelectric conversion device and solar battery | |
| CN103268906B (en) | Cadmium sulphide membrane and there is the preparation method of the solar cell of cadmium sulphide membrane | |
| CN115513328A (en) | High-temperature infrared detector with improved potential barrier and manufacturing method thereof | |
| KR101300791B1 (en) | Method for enhancing conductivity of molybdenum layer | |
| KR101412150B1 (en) | Tandem structure cigs solar cell and method for manufacturing the same | |
| JPH04282871A (en) | Thin film solar cell | |
| JPH11163376A (en) | Thin-film solar cell | |
| CN209766450U (en) | Silicon heterojunction solar cell and emitter thereof | |
| KR101846337B1 (en) | Solar cell apparatus and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210518 |