CN115513328A - High-temperature infrared detector with improved potential barrier and manufacturing method thereof - Google Patents

High-temperature infrared detector with improved potential barrier and manufacturing method thereof Download PDF

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CN115513328A
CN115513328A CN202211328205.3A CN202211328205A CN115513328A CN 115513328 A CN115513328 A CN 115513328A CN 202211328205 A CN202211328205 A CN 202211328205A CN 115513328 A CN115513328 A CN 115513328A
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layer
improved
superlattice
infrared detector
barrier
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徐志成
李光昊
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Zhongke Aibisaisi Changzhou Photoelectric Technology Co ltd
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Zhongke Aibisaisi Changzhou Photoelectric Technology Co ltd
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Abstract

The invention provides a high temperature infrared detector with an improved potential barrier, comprising: the buffer layer, the first N-type ohmic contact layer, the N-type long-wave absorption layer, the improved superlattice barrier layer and the second N-type ohmic contact layer are epitaxially grown on the substrate in sequence; the improved superlattice barrier layer covers the space charge area of the heterojunction formed by the N-type long-wave absorption layer and the second N-type ohmic contact layer. The structure disclosed by the invention realizes the infrared detector capable of keeping a lower dark current level at high temperature through the design of the device structure, and has a simple structure; by improving the design and optimization of the superlattice barrier layer, the quantum efficiency of the detector is improved while the generation-recombination dark current and the tunneling dark current in the device are greatly inhibited. The invention also provides a manufacturing method of the high-temperature infrared detector with the improved potential barrier.

Description

High-temperature infrared detector with improved potential barrier and manufacturing method thereof
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a high-temperature infrared detector with an improved potential barrier.
Background
The core competitiveness of the new generation of infrared focal plane detectors will convergeFocusing on "SWaP 3 ", i.e., smaller Size (Size), smaller Weight (Weight), lower Power consumption (Power consumption), higher performance (performance), and lower cost (Price), wherein increasing the operating temperature of the infrared detector becomes critical. The volume, the weight and the power consumption of the current photovoltaic High-performance infrared detector mainly come from a mechanical refrigerator, so that the size of the refrigerator can be greatly reduced, the importance and the power consumption of the whole machine can be reduced, and the cost of an infrared detection system is reduced and the stability of the system is improved. However, as the operating temperature of the infrared detector increases, the diffusion current and the generation-recombination current index caused by thermally excited carriers increase, so that how to maintain higher detection performance while increasing the operating temperature of the infrared detector has become SWaP 3 The core scientific and technical problem of development.
The infrared detection technology has important and wide application in the fields of space-to-ground detection, manned spaceflight, target search and tracking, medical and industrial thermal imaging and the like, wherein the long-wave infrared detection technology has irreplaceable application value for monitoring the distribution of atmospheric temperature and humidity elements, astronomical observation and the like. The rapid development of molecular beam epitaxy technology enables antimonide II-type superlattice to become an ideal infrared photoelectric detection material, and the material has the remarkable advantages of low Auger recombination rate, high effective carrier quality, good material uniformity, relatively low focal plane manufacturing cost and the like. The InAs/InAsSb II type superlattice has a longer carrier life than the InAs/GaSb II type superlattice in recent years, and has outstanding advantages in the development of a high-temperature and high-performance long-wave infrared focal plane detector. The existing II-type superlattice high-temperature infrared detector is mainly of an nBn structure, namely an absorption region is doped with N type or not intentionally doped, an ohmic contact layer is doped with N type, and a barrier layer is doped not intentionally. The InAs/InAsSb II type superlattice has the characteristic of intrinsic N type doping, and is very suitable for being used as a manufacturing material of an absorption region in an nBn structure high-temperature infrared detector. At present, the common InAs/InAsSb II type superlattice nBn high-temperature infrared detector mainly takes AlSb as a material for manufacturing a barrier layer. However, the valence band of AlSb is slightly higher than that of InAs/InAsSb II superlattice, which not only bends the energy band at the interface between the absorption region and the barrier layer, but also forms a hole potential well between the absorption region and the ohmic contact layer, thereby affecting the quantum efficiency and the dark current level of the detector. Therefore, the invention designs a high-temperature infrared detector with an improved potential barrier and a manufacturing method thereof, and the detection performance of the high-temperature infrared detector is further improved by changing the manufacturing material and the structure of the potential barrier layer in the nBn high-temperature infrared detector to align the valence band of the potential barrier layer with the valence band of the absorption region.
Disclosure of Invention
The invention aims to design a high-temperature infrared detector with an improved potential barrier so as to solve the following technical problems:
1. at present, the mainstream InAs/InAsSb II type superlattice nBn high-temperature infrared detector adopts AlSb as a barrier layer, so that the energy band at the interface of an absorption region and the barrier layer is bent, and the composite dark current generated in the absorption region is increased;
2. at present, the mainstream InAs/InAsSb II type superlattice nBn high-temperature infrared detector adopts AlSb as a barrier layer, so that a hole barrier is formed between an absorption region and an ohmic contact layer, and the quantum efficiency of the device is reduced.
The invention adopts the following technical scheme:
one aspect of the invention provides a high temperature infrared detector with an improved barrier, comprising: the N-type long-wave absorption layer, the improved superlattice barrier layer extending on the N-type long-wave absorption layer, and the N-type ohmic contact layer extending on the improved superlattice barrier layer; the improved superlattice barrier layer covers a space charge area formed between the N-type long-wave absorption layer and the N-type ohmic contact layer.
Further, the high temperature infrared detector with improved potential barrier further comprises: the buffer layer is arranged on the substrate; the buffer layer is epitaxially grown on the substrate, and the N-type long-wave absorption layer is epitaxially grown on the buffer layer.
Further, the substrate is composed of undoped GaSb.
Further, the method comprisesThe thickness of the buffer layer is 500-1000 nm, the buffer layer is composed of InAsSb doped with Si, and the doping concentration of the Si is 1 multiplied by 10 17 cm -3 ～1×10 18 cm -3 。
Furthermore, the thickness of the N-type long-wave absorption layer is 3~6 mu m, the N-type long-wave absorption layer is composed of Si-doped InAs/InAsSb superlattice, each period of the N-type long-wave absorption layer is composed of 25-30ML InAs and 5-7ML InAsSb, and the doping concentration of Si is 1 multiplied by 10 16 cm -3 ～1×10 17 cm -3 。
Further, the thickness of the improved superlattice barrier layer is 400nm-500nm, the improved superlattice barrier layer is composed of undoped InAs/AlAs/InAs/InAsSb superlattices, each period is composed of 12-16ML InAs, 1-2ML AlAs and 5-7ML InAsSb, and the thickness of the InAsSb layer in each period is the same as that of the InAsSb layer in each period of the N-type long-wave absorption layer.
Furthermore, the thickness of the N-type ohmic contact layer is 200-400nm, the N-type ohmic contact layer is composed of Si-doped InAs/InAsSb superlattice, each period of the N-type ohmic contact layer is composed of 25-30ML InAs and 5-7ML InAsSb, and the doping concentration of Si is 1 multiplied by 10 17 cm -3 ～1×10 18 cm -3 。
Meanwhile, the invention also provides a method for manufacturing the NBp type potential barrier superlattice high-temperature infrared detector, which comprises the following steps: s1: forming a buffer layer, an N-type long-wave absorption layer, an improved superlattice barrier layer and an N-type ohmic contact layer which are sequentially stacked on the substrate through epitaxial growth; s2: forming a mesa composed of the N-type long-wave absorption layer, the improved superlattice barrier layer and the N-type ohmic contact layer on the buffer layer; s3: and respectively arranging a first electrode and a second electrode on the surface of the buffer layer and the surface of the N-type ohmic contact layer.
Furthermore, the growth mode of the laminated structure is molecular beam epitaxy.
Further, the method for forming the mesa on the buffer layer is photolithography etching, which includes:
spin coating photoresist on the surface of the laminated structure;
forming a photoresist covering pattern on the surface of the N-type ohmic contact layer by using a mask photoetching and developing method;
and corroding the part of the surface of the N-type ohmic contact layer, which is not covered by the photoresist pattern, to the buffer layer by using a wet chemical etching method, thereby forming a table top consisting of the N-type long-wave absorption layer, the improved superlattice barrier layer and the N-type ohmic contact layer.
Further, growing a first electrode on the surface of the buffer layer through electron beam evaporation coating; and growing a second electrode on the table top of the N-type ohmic contact layer through electron beam evaporation coating.
The invention has the following beneficial effects:
1. through design and doping regulation of a potential barrier structure, a space electric field of the whole device is limited in a potential barrier region with a wide forbidden band, so that generation-composite dark current and tunneling dark current in an absorption region are greatly reduced; meanwhile, the generation-recombination current is rapidly reduced along with the widening of the band gap, and the dark current fitting result shows that the generation-recombination current in the potential barrier region does not greatly contribute to the total dark current level of the device.
2. The invention reasonably and accurately regulates the superlattice period thickness and the total thickness of the barrier layer, and the theoretical calculation result shows that the valence band at each hetero-junction interface is smooth and has no peak and barrier, thereby having good carrier dredging performance, and photon-generated minority carriers, namely holes, can smoothly move to the electrode through the drift effect under the condition, thereby improving the quantum efficiency.
Drawings
FIG. 1 is a schematic diagram of a high temperature infrared detector with an improved barrier according to the present invention;
FIG. 2 is a schematic diagram of the theoretical device energy band at 0.1V bias voltage of a high temperature infrared detector with an improved potential barrier of the present invention;
FIG. 3 is a graph of current-voltage characteristics at different temperatures for a high temperature infrared detector of the present invention with an improved barrier;
FIG. 4 is a flow chart of a method of fabricating a high temperature infrared detector with an improved barrier according to the present invention.
Detailed Description
The invention designs and manufactures the superlattice high-temperature infrared detector with simple structure through energy band engineering according to the energy band structure characteristics of the superlattice infrared detector. The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
A high temperature infrared detector with improved potential barrier, as shown in fig. 1, specifically comprising: the substrate comprises a substrate 1, a buffer layer 2, an N-type long-wave absorption layer 3, an improved superlattice barrier layer 4, an N-type ohmic contact layer 5, a first electrode 6 and a second electrode 7.
Substrate 1, the preparation material comprises unintentionally doped GaSb.
A buffer layer 2 epitaxially grown on the substrate 1, the prepared material including InAsSb doped with Si, preferably, the buffer layer 2 has a thickness of 500nm, the Sb component is 0.09, and the doping concentration of Si is 1 × 10 18 cm -3 。
The N-type long-wave absorption layer 3 is epitaxially grown on the buffer layer 2, and has a thickness of 3~6 μm, and the preparation material comprises: the InAs/InAsSb superlattice doped with Si comprises 25-30ML InAs and 5-7ML InAsSb per period, and the doping concentration of Si is 1 multiplied by 10 16 cm -3 ～1×10 17 cm -3 Preferably, the periodic thickness of InAs/InAsSb is 28ML/7ML, the Sb component in InAsSb is 0.5, the doping concentration of Si is 1 x 10 16 cm -3 . The designed P-type medium wave absorption layer 4 has the forbidden band width of 108.1meV at 150K and the absorption wavelength of 11.5 mu m. Preferably, the thickness of the N-type long wavelength absorption layer 3 is specifically selected to be 4 μm.
The improved superlattice barrier layer 4 is epitaxially grown on the N-type long-wave absorption layer 3, the thickness of the improved superlattice barrier layer is 400nm-500nm, and the preparation materials comprise: the unintentionally doped InAs/AlAs/InAs/InAsSb superlattice comprises 12-16ML InAs, 1-2ML AlAs and 5-7ML InAsSb per period, wherein the InAsSb period thickness in each period is the same as the InAsSb period thickness in the N-type long-wave absorption layer. Preferably, the InAs/AlAs/InAs/InAsSb period thickness is 6.5ML/1.5ML/6.5ML/7ML. The forbidden band width of the P-type compensation doping barrier layer 4 designed by the design is 195.6meV at 150K. Preferably, the thickness of the P-type offset doping barrier layer 4 is 480nm.
An N-type ohmic contact layer 5 with a thickness of 200-400nm epitaxially grown on the modified superlattice barrier layer 4The preparation method comprises the following steps: the InAs/InAsSb superlattice doped with Si comprises 25-30ML InAs and 5-7ML InAsSb per period, and the doping concentration of Si is 1 multiplied by 10 17 cm -3 ～1×10 18 cm -3 Preferably, the composition of Sb in the InAs/InAsSb periodic thickness of 28ML/7ML and InAsSb is 0.5, and the doping concentration of Si is specifically selected to be 5 multiplied by 10 17 cm -3 . The designed N-type ohmic contact layer 5 has a forbidden band width of 108.1meV at 150K. Preferably, the thickness of the N-type ohmic contact layer 5 is specifically selected to be 400nm.
After the material growth is finished, forming a pattern covered by photoresist on the N-type ohmic contact layer 5 by a mask photoetching and developing method, and then corroding the part, which is not covered by the photoresist, of the surface of the N-type ohmic contact layer 5 to the buffer layer 2 by using a wet chemical etching method, so that a table top formed by the N-type long-wave absorption layer, the improved superlattice barrier layer and the N-type ohmic contact layer is formed on the buffer layer. Preferably, the corrosion solution is citric acid: the phosphoric acid solution has the corrosion rate of about 500nm/min and the corrosion time of about 10min.
After the mesa is formed, the first electrode 6 is grown on the surface of the buffer layer 2 through electron beam evaporation coating. The second electrode 7 is grown on the N-type ohmic contact layer 5 by electron beam evaporation plating.
During specific operation, the invention can adjust the period thicknesses of the InAs layer, the InAsSb layer and the AlAs layer in each layer of superlattice structure and the total thickness of the superlattice so as to ensure that the whole valence band of the device is smooth and unobstructed and the discontinuity of the valence band between different layers is close to zero.
The doping concentration of Si in the N-type long-wave absorption layer 3 and the N-type ohmic contact layer 5 is limited in the range, so that defects in the device and the density of recombination centers are reduced, and dark current is reduced.
The invention forms an nBn single-barrier heterojunction structure by growing the improved superlattice barrier layer 4 between the N-type long-wave absorption layer 3 and the N-type ohmic contact layer 5, and ensures that holes in the device can be freely distributed without obstruction by adjusting the thickness, superlattice components and doping concentration of each superlattice layer to keep the discontinuity of a valence band close to zero between the N-type long-wave absorption layer 3, the improved superlattice barrier layer 4 and the N-type ohmic contact layer 5, thereby ensuring good response performance.
Under the irradiation of long-wave infrared light with the wavelength of 8-11.5 microns, the layer structure firstly generates photo-generated electron-hole pairs in the N-type long-wave absorption layer 3, wherein, many electrons move to the improved superlattice barrier layer 4 under the diffusion action, but can not pass through the improved superlattice barrier layer 4 with a high valence band; minority carrier holes drift towards the improved superlattice barrier layer 4 under the action of an electric field, and due to the fact that the valence band of the designed device is smooth and unobstructed at interfaces of all layers, the holes can be freely transported to the N-type ohmic contact layer 5 without hindrance and are finally collected by the electrodes, and optical signals are converted into electric signals to be output.
The structural design of the invention ensures that the I-V characteristic curve of the device at different temperatures is shown in figure 3, and the dark current density of the device at 77K does not exceed 1 multiplied by 10 under the reverse bias within 0.5V shown in figure 3 -7 Acm -3 Dark current density at 150K of about 3X 10 -4 Acm -3 . Therefore, the invention is an infrared detector structure which still keeps high performance at high temperature.
In conclusion, the invention utilizes the characteristic that the superlattice structure is easy to regulate and control the energy band, introduces the single potential barrier structure, greatly inhibits the G-R current and the tunneling current at the space charge region through the wide forbidden band of the potential barrier, regulates and controls the superlattice thickness and the doping accurately and reasonably, and achieves the effects of improving the quantum efficiency and the responsivity of the device and reducing the whole dark current of the device.

Claims (8)

1. A high temperature infrared detector having an improved barrier, comprising: the device comprises a substrate, a buffer layer, an N-type long-wave absorption layer, an improved superlattice barrier layer and an N-type ohmic contact layer;
the buffer layer is epitaxially grown on the substrate, the N-type long-wave absorption layer is epitaxially grown on the buffer layer, the improved superlattice barrier layer is epitaxially grown on the N-type long-wave absorption layer, and the N-type ohmic contact layer is epitaxially grown on the improved superlattice barrier layer;
the improved superlattice barrier layer covers the space charge area of the heterojunction formed by the N-type long-wave absorption layer and the N-type ohmic contact layer.
2. A high temperature infrared detector having an improved barrier as claimed in claim 1, wherein the substrate is GaSb.
3. A high temperature infrared detector with improved barrier as claimed in claim 1, characterized in that the buffer layer has a thickness of 500nm-1000nm and is made of Si doped InAsSb with a doping concentration of 1 x 10 17 cm -3 ～1×10 18 cm -3 。
4. The high-temperature infrared detector with the improved barrier as claimed in claim 1, wherein the thickness of the N-type long-wave absorption layer is 3~6 μm, the N-type long-wave absorption layer is composed of Si-doped InAs/InAsSb superlattice, each period is composed of 25-30ML InAs and 5-7ML InAsSb, and the doping concentration of Si is 1 x 10 16 cm -3 ～1×10 17 cm -3 。
5. A high temperature infrared detector with improved barrier according to claim 1, characterized in that the improved superlattice barrier layer has a thickness of 400nm-500nm, is composed of undoped InAs/AlAs/InAs/InAsSb superlattice, and is composed of 12-16ML InAs, 1-2ML AlAs, 5-7ML InAsSb in each period, wherein the thickness of the InAsSb layer in each period is the same as that of the N-type long wave absorption layer.
6. A high temperature infrared detector with improved barrier as claimed in claim 1, characterized in that the N-type ohmic contact layer is 200-400nm thick and is composed of Si doped InAs/InAsSb superlattice, each period is composed of 25-30ML InAs and 5-7ML InAsSb, the doping concentration of Si is 1 x 10 17 cm -3 ～1×10 18 cm -3 。
7. A high temperature infrared detector having an improved barrier as claimed in claim 1, further comprising: the first electrode is arranged on the buffer layer, and the second electrode is arranged on the N-type ohmic contact layer.
8. A method for manufacturing a high-temperature infrared detector with an improved potential barrier is characterized by comprising the following steps:
s1: forming a buffer layer, an N-type long-wave absorption layer, an improved superlattice barrier layer and an N-type ohmic contact layer which are sequentially stacked on the substrate through epitaxial growth;
s2: forming a table top consisting of the N-type long-wave absorption layer, the improved superlattice barrier layer and the N-type ohmic contact layer on the buffer layer;
s3: and respectively arranging a first electrode and a second electrode on the surface of the buffer layer and the surface of the N-type ohmic contact layer.
CN202211328205.3A 2022-10-27 2022-10-27 High-temperature infrared detector with improved potential barrier and manufacturing method thereof Pending CN115513328A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116344661A (en) * 2022-12-27 2023-06-27 浙江焜腾红外科技有限公司 InAs-InAsSb class-II superlattice infrared detector material structure working at high temperature

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116344661A (en) * 2022-12-27 2023-06-27 浙江焜腾红外科技有限公司 InAs-InAsSb class-II superlattice infrared detector material structure working at high temperature
CN116344661B (en) * 2022-12-27 2024-03-08 浙江焜腾红外科技有限公司 InAs-InAsSb class-II superlattice infrared detector material structure working at high temperature

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